CN101839848B - CMOS/MEMS compatible spectrum type gas sensor - Google Patents
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Abstract
The invention discloses a CMOS/MEMS compatible spectral gas sensor, which utilizes the near-infrared transmission spectrum of gas to be measured to perform qualitative and quantitative analysis. The sensor comprises an infrared light source, a photonic crystal dispersion prism, an infrared photoelectric detection array and the like, adopts a reference structure, judges the type of gas by analyzing the position of a characteristic spectral line of a near-infrared transmission spectrum of the gas, and determines the concentration of the gas according to corresponding absorbance. The invention solves the defects of complex process and short service life of the traditional MEMS gas sensor, has high sensitivity detection capability, is compatible with CMOS (complementary metal oxide semiconductor) process in manufacturing, can be produced in batches, reduces the cost, and analyzes the gas concentration gradient by an integrated array.
Description
Technical field
The present invention relates to a kind of gas sensor, relate in particular to a kind of CMOS/MEMS compatible spectroscopic gas sensor, this sensor utilizes the feature of the near-infrared transmission spectrum of gas to judge gaseous species, and determine gas content by measuring absorbance, solve that existing gas sensor sensitivity is low, the life-span is limited, the problem of scalar potential detectivity, and with the CMOS process compatible, can produce in batches, be convenient to reduce cost, be extensive use of.
Background technology
Along with development in science and technology and epoch progress, people are more and more higher to the requirement of promptly and accurately monitoring gaseous environment.The big power consumption height of traditional gas sensor volume, sensitivity is low, and consistency of performance is poor, uses inconvenience and cost height, is difficult to promote.The MEMS gas sensor is inherited the advantage of microelectric technique, the volume low power consumption is low, consistency of performance is good, easy to use, but the MEMS gas sensor that is based on the sensitive membrane class generally all is to cause that the variation of mechanical parameter such as electric parameters such as resistance capacitance or vibration frequency realizes gas detection, the problem that this class sensor often exists sensitivity and sensor life-time to be difficult to compromise after utilizing sensitive membrane and object gas generation selective adsorption.
Spectral analysis is as chemico-analytic Last Resort, is a selection that effectively solves present gas sensor research and development field problems, especially its disturb at anti-steam, aspect such as selectivity strong point sensitive membrane class gas sensor is incomparable especially.But the big cost height of existing spectroscopic gas sensor volume is not easy to be extensive use of.
Summary of the invention
(1) technical matters that will solve
Existing gas sensor poor selectivity, sensitivity are low in order to solve, a little less than the antijamming capability, the easy problem such as poisoning of rate of false alarm height and sensor, the invention provides a kind of CMOS/MEMS compatible spectroscopic gas sensor, to satisfy the requirement that people analyze for high-precision gas.
(2) technical scheme
For achieving the above object, the invention provides a kind of CMOS/MEMS compatible spectroscopic gas sensor, utilize the near-infrared transmission spectrum of gas to determine gaseous species and concentration, this sensor is made of the infrared light supply 1, photonic crystal dispersing prism 2, measurement air chamber 3, reference air chamber 4, measurement air chamber infrared electro detection arrays 5 and the reference air chamber infrared electro detection arrays 6 that are integrated on the silicon substrate.
In the such scheme, described infrared light supply 1 is for being integrated in the diode on (110) silicon substrate, the infrared light that this diode sends is by behind a pair of vertical slit 102, with identical angle, etc. high-power being incident on the described photonic crystal dispersing prism 2, and press the wavelength expansion in the space.
In the such scheme, described vertical slit 102 is 1 micron wide that etches on the silicon substrate, 5 microns dark slits, and should equate the distance of vertical slit 102 apart from infrared light supply 1 light-emitting window.
In the such scheme, the hole array of described photonic crystal dispersing prism 2 on (110) silicon substrate, etching, this array by etc. big hole two-dimension periodic arrange and form, the physical dimension of its cycle and hole is a same order with near-infrared wavelength all, utilize the super prism effect of photonic crystal to wavelength sensitive, with the incident infrared light at space development.
In the such scheme, described measurement air chamber 3 and reference air chamber 4 are symmetrical structure, and size is identical, joins with photonic crystal dispersing prism 2; Measuring air chamber 3 is open architecture, communicates with gaseous environment to be analyzed; 4 of reference air chambers are enclosed construction, and an interior front cover atmospheric calibrating gas does not contain special composition to be detected in this calibrating gas.
In the such scheme, described measurement air chamber 3 afterbodys have the measurement air chamber infrared electro detection arrays 5 that is used to detect by the transmitted infrared light light intensity behind the air chamber, described reference air chamber 4 afterbodys have the reference air chamber infrared electro detection arrays 6 that is used to detect by the transmitted infrared light light intensity behind the air chamber, imaging on Photoelectric Detection array separately after the infrared light of chromatic dispersion passes gas in the air chamber, and form the transmission spectrum of different characteristic according to the difference of detected gas, determine the kind of gas to be measured by the feature of analyzing transmission spectrum, and determine the content of this gas by the measurement absorbance.
In the such scheme, described measurement air chamber infrared electro detection arrays 5 and reference air chamber infrared electro detection arrays 6 are the InGaAs photodiode linear array of semiconductor peltier effect refrigeration.
In the such scheme, the infrared light that described light source 1 sends is after described photonic crystal dispersing prism 2 wide-angle beam split, the result who obtains on the different pixels of measuring air chamber infrared electro detection arrays 5 and reference air chamber infrared electro detection arrays 6 is approximately the monochromatic imaging results of different wave length, that is measures the infrared light intensity of the corresponding different wave length of electric signal of different pixels outputs on air chamber infrared electro detection arrays 5 and the reference air chamber infrared electro detection arrays 6.
In the such scheme, enter the infrared light of measuring air chamber 3, can form different transmission spectrums according to the kind and the concentration of object gas in the gas to be measured, the gaseous species feature has been expressed in the position that absorption peak occurs on the transmission spectrum, and the intensity of absorption peak has then embodied the concentration change of gas; Enter the infrared light of reference air chamber 4, owing to do not have an effect with object gas, so the light intensity at characteristic peak place can not have greatly changed on the transmission spectrum of object gas; By comparing and measuring air chamber 3 and reference air chamber 4 detected transmission spectrums, can detect the spectrum change situation that the existence of object gas in the gas to be measured causes, comprise two information of position and intensity, analyze the gained data through signal processing circuit, then can obtain the kind and the concentration thereof of object gas in the gas to be measured.
(3) beneficial effect
As can be seen from the above technical solutions, the present invention has following beneficial effect
(1) CMOS/MEMS compatible spectroscopic gas sensor provided by the invention, utilize the near-infrared transmission analysis of spectrum gas of gas, overcome based on sensitive material in the gas sensor of chemical reaction the influence of device performance, had characteristics such as response is quick, highly sensitive, repeatability and high conformity, antijamming capability is strong, the life-span is long.
(2) CMOS/MEMS compatible spectroscopic gas sensor provided by the invention, adopting the super prism of photonic crystal is dispersion element, greatly improved the beam split ability, the infrared light that light source is sent spatially fully launches by wavelength, make actual measured results with more approaching based on monochromatic theoretical analysis, the linearity of sensor improves greatly.
(3) CMOS/MEMS compatible spectroscopic gas sensor provided by the invention is analyzed at the near infrared spectrum of gas, and utilizes the opto-electronic conversion mode to realize that signal directly changes.The near-infrared region is gaseous spectrum " fingerprint region ", simultaneously, utilizes this section spectrum to analyze, and need utilize thermo-effect of infrared radiation to carry out the link of conversion of signals, fast and reliable more in the time of can avoiding the mid-infrared light analysis of spectrum.
(4) CMOS/MEMS compatible spectroscopic gas sensor provided by the invention is taked the residual quantity detection means, effectively suppresses variable effect such as environment temperature and humidity and brings common-mode noise, improves signal to noise ratio (S/N ratio), and measurement result is more accurate.
(5) CMOS/MEMS compatible spectroscopic gas sensor provided by the invention, compatible fully with CMOS technology, utilize ripe IC technology, the detection and the Treatment Analysis of signal are integrated, and can realize the vector analysis of gas concentration by making sensor array, judge source of the gas, meet gas sensor miniaturization, array, intelligentized development trend.
Description of drawings
Fig. 1 is a CMOS/MEMS compatible spectroscopic gas sensor planar structure synoptic diagram provided by the invention;
Fig. 2 is the principle schematic of certain pixel in the CMOS/MEMS compatible spectroscopic gas sensor Photoelectric Detection linear array provided by the invention;
Among the figure, infrared light supply 1, photonic crystal dispersing prism 2, measurement air chamber 3, reference air chamber 4, measurement air chamber infrared electro detection arrays 5 and reference air chamber infrared electro detection arrays 6, slit 102.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, be instantiation below in conjunction with benzene vapour in the analysis environments gas, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is a CMOS/MEMS compatible spectroscopic gas sensor structural representation provided by the invention, and this sensor mainly is made of infrared red source 1, photonic crystal dispersing prism 2, measurement air chamber 3, reference air chamber 4, measurement air chamber infrared electro detection arrays 5 and reference air chamber infrared electro detection arrays 6.
Infrared light supply 1 is for being integrated in the diode on (110) silicon substrate, this diode has stable infrared radiation output at 0～5 μ m, the infrared light that luminotron sends is behind a pair of 5 microns dark, 1 micron wide monocrystalline silicon slits, be divided into two bundles, with etc. high-power, equal angular be incident on the photonic crystal dispersing prism 2 and imaging respectively on a plurality of pixels through measuring air chamber infrared electro detection arrays 5 and reference air chamber infrared electro detection arrays 6 after 2 beam split of photonic crystal dispersing prism.
Photonic crystal dispersing prism 2 and slit 102 are space structures of making on (110) silicon substrate, with silicon nitride mask, after the ICP definition etching window, obtain the high vertical structure of smooth finish by the anisotropic wet corrosion.
The monochromatic intensity of different wave length is detected by the pixel of different spatial on the measurement air chamber infrared electro detection arrays 5 of measuring air chamber 3 and reference air chamber 4 afterbodys and the reference air chamber infrared electro detection arrays 6.Each pixel is anti-inclined to one side InGaAs photodiode as shown in Figure 2, and the infrared light that is radiated at the space charge region draws will play the increase of photo-generated carrier: incident intensity is big more, and the charge carrier of generation is many more, and the anti-inclined to one side saturation current in loop is big more.For making photodiode that better individual features be arranged, need freeze to-20 ℃ to it.Electric signal by each pixel output can obtain the transmission spectrum of infrared light through forming behind the air chamber.
After the light beam splitting that infrared light supply 1 sends, by photonic crystal dispersing prism 2 its contained each monochromatic light component is launched, respectively by measurement air chamber 3 and reference air chamber 4, and by measuring the near-infrared transmission spectrum signal that air chamber infrared electro detection arrays 5 and reference air chamber infrared electro detection arrays 6 obtain the 2 air chambers internal gas.Two spectrum are compared, and the absorbance of measuring the infrared light of each wavelength in the air chamber 3 as can be known changes.Detect the variation of the characteristic peak place absorbance of benzene, just know the benzene content in the gas to be measured.
Above-described concrete embodiment has carried out further detailed explanation to purpose of the present invention, technical scheme and beneficial effect.Institute it should be understood that the above only for concrete embodiment of the present invention, is not limited to the present invention.All any modifications of being made within the spirit and principles in the present invention, be equal to and replace or improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. CMOS/MEMS compatible spectroscopic gas sensor, utilize the near-infrared transmission spectrum of gas to determine gaseous species and concentration, it is characterized in that this sensor is made of the infrared light supply (1), photonic crystal dispersing prism (2), measurement air chamber (3), reference air chamber (4), measurement air chamber infrared electro detection arrays (5) and the reference air chamber infrared electro detection arrays (6) that all are integrated on the silicon substrate;
Wherein, described infrared light supply (1) is for being integrated in the diode on (110) silicon substrate, the infrared light that this diode sends is by behind a pair of vertical slit (102), with identical angle, etc. high-power being incident on the described photonic crystal dispersing prism (2), and press the wavelength expansion in the space.
2. CMOS/MEMS compatible spectroscopic gas sensor according to claim 1, it is characterized in that, described vertical slit (102) is 1 micron wide that etches on the silicon substrate, 5 microns dark slits, and should equate the distance of vertical slit (102) apart from infrared light supply (1) light-emitting window.
3. CMOS/MEMS compatible spectroscopic gas sensor according to claim 1, it is characterized in that, the hole array of described photonic crystal dispersing prism (2) on (110) silicon substrate, etching, this array by etc. big hole two-dimension periodic arrange and form, the physical dimension of its cycle and hole is a same order with near-infrared wavelength all, utilize the super prism effect of photonic crystal to wavelength sensitive, with the incident infrared light at space development.
4. CMOS/MEMS compatible spectroscopic gas sensor according to claim 1 is characterized in that, described measurement air chamber (3) and reference air chamber (4) are symmetrical structure, and size is identical, joins with photonic crystal dispersing prism (2); Measuring air chamber (3) is open architecture, communicates with gaseous environment to be analyzed; Reference air chamber (4) then is an enclosed construction, and an interior front cover atmospheric calibrating gas does not contain special composition to be detected in this calibrating gas.
5. CMOS/MEMS compatible spectroscopic gas sensor according to claim 4, it is characterized in that, described measurement air chamber (3) afterbody has the measurement air chamber infrared electro detection arrays (5) that is used to detect by the transmitted infrared light light intensity behind the air chamber, described reference air chamber (4) afterbody has the reference air chamber infrared electro detection arrays (6) that is used to detect by the transmitted infrared light light intensity behind the air chamber, imaging on Photoelectric Detection array separately after the infrared light of chromatic dispersion passes gas in the air chamber, and form the transmission spectrum of different characteristic according to the difference of detected gas, determine the kind of gas to be measured by the feature of analyzing transmission spectrum, and determine the content of this gas by the measurement absorbance.
6. CMOS/MEMS compatible spectroscopic gas sensor according to claim 1, it is characterized in that described measurement air chamber infrared electro detection arrays (5) and reference air chamber infrared electro detection arrays (6) are the InGaAs photodiode linear array of semiconductor peltier effect refrigeration.
7. CMOS/MEMS compatible spectroscopic gas sensor according to claim 1, it is characterized in that, the infrared light that described light source (1) sends is after described photonic crystal dispersing prism (2) wide-angle beam split, the result who obtains on the different pixels of measuring air chamber infrared electro detection arrays (5) and reference air chamber infrared electro detection arrays (6) is approximately the monochromatic imaging results of different wave length, that is measures the infrared light intensity of the corresponding different wave length of electric signal of the upward different pixels outputs with reference air chamber infrared electro detection arrays (6) of air chamber infrared electro detection arrays (5).
8. CMOS/MEMS compatible spectroscopic gas sensor according to claim 7 is characterized in that,
Enter the infrared light of measuring air chamber (3), can form different transmission spectrums according to the kind and the concentration of object gas in the gas to be measured, the gaseous species feature has been expressed in the position that absorption peak occurs on the transmission spectrum, and the intensity of absorption peak has then embodied the concentration change of gas;
Enter the infrared light of reference air chamber (4), owing to do not have an effect with object gas, so the light intensity at characteristic peak place can not have greatly changed on the transmission spectrum of object gas;
By comparing and measuring air chamber (3) and the detected transmission spectrum of reference air chamber (4), can detect the spectrum change situation that the existence of object gas in the gas to be measured causes, position and two information of intensity of comprising absorption peak, analyze the gained data through signal processing circuit, then can obtain the kind and the concentration thereof of object gas in the gas to be measured.
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| CN102175610A (en) * | 2010-12-29 | 2011-09-07 | 北京邮电大学 | Implementation method for photonic crystal biochemical sensor array capable of realizing parallel perception |
| CN103484940B (en) * | 2012-06-09 | 2016-01-27 | 中国科学院合肥物质科学研究院 | The preparation method of anodised aluminium photonic crystal and purposes |
| DE102016209798A1 (en) * | 2016-06-03 | 2017-12-07 | Robert Bosch Gmbh | Microelectronic sensor device and method of manufacturing a microelectronic sensor device |
| CN107833939B (en) * | 2017-11-22 | 2021-09-03 | 绍兴文理学院 | Two-dimensional photonic crystal selective radiator and preparation method thereof |
| CN110361452A (en) * | 2019-08-05 | 2019-10-22 | 江苏科技大学 | A kind of miniature sound emission resonant mode capacitance sensor and its application method |
| CN110927095B (en) * | 2019-12-05 | 2021-05-18 | 成都千嘉科技有限公司 | Gas concentration detection method and system based on spectral energy density |
| CN113252579A (en) * | 2021-04-27 | 2021-08-13 | 浙江省现代农业装备设计研究院 | Facility-based agricultural comprehensive sensor device and air parameter detection method thereof |
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Denomination of invention: CMOS/MEMS compatible spectral gas sensor Effective date of registration: 20230925 Granted publication date: 20111109 Pledgee: Agricultural Bank of China Limited Urumqi Branch Pledgor: Xinjiang Zhongke Silk Road Technology Co.,Ltd. Registration number: Y2023980058617 |