CN102234830A - Electroplating apparatus and method for electroplating conducting layers on substrate - Google Patents
Electroplating apparatus and method for electroplating conducting layers on substrate Download PDFInfo
- Publication number
- CN102234830A CN102234830A CN2010101737623A CN201010173762A CN102234830A CN 102234830 A CN102234830 A CN 102234830A CN 2010101737623 A CN2010101737623 A CN 2010101737623A CN 201010173762 A CN201010173762 A CN 201010173762A CN 102234830 A CN102234830 A CN 102234830A
- Authority
- CN
- China
- Prior art keywords
- substrate
- electroplated
- pedestal
- bearing
- electroplate liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
An embodiment of the invention provides an electroplating apparatus and a method for electroplating conducting layers on a substrate. The electroplating apparatus comprises a base and a sealing ring, wherein the base is used for bearing a bearing substrate and a substrate to be electroplated arranged on the bearing substrate; the substrate to be electroplated is provided with a patterned material layer which at least is provided with one opening for exposing a region to be electroplated on the substrate to be electroplated; the sealing ring is arranged on the substrate to be electroplated for limiting an electroplating liquid on the region to be electroplated, wherein the sealing ring comprises at least one bulge for contacting with the bearing substrate to prevent the electroplating liquid from overflowing to the base. The arrangement of the sealing ring enables the bulge on the sealing ring to resist against and contact with the bearing substrate, so that the electroplating liquid can be effectively prevented from overflowing. In particular, when the substrate to be electroplated which is arranged on the bearing substrate is thinned for a through-substrate via (TSV) conducting structure is formed, the electroplating liquid used by the electroplating process is avoided permeating to the base.
Description
Technical field
The present invention relates to electroplanting device, and be particularly related to the wear ring in the electroplanting device.
Background technology
In the making of semiconductor integrated circuit, metal carbonyl conducting layer is in order to form the intraconnections between the various elements in the semiconductor wafer.Electroplating technology is in order to one of method that forms metal carbonyl conducting layer.For example, can form required conductive pattern on semiconductor wafer by electroplating technology, it for example is a patterned copper layer.
For reliability and the yield of promoting semiconductor element, the improvement electroplanting device becomes important topic to lower the risk that during the electroplating technology semiconductor element is damaged.
Summary of the invention
One embodiment of the invention provides a kind of electroplanting device, comprise pedestal, in order to the carrying bearing substrate and be arranged at electroplated substrate on the bearing substrate, wherein has patterned material layer on the electroplated substrate, patterned material layer has at least one opening, expose the electroplated district on the electroplated substrate, and wear ring, be used to be arranged on the electroplated substrate electroplate liquid is confined on the electroplated district, wherein wear ring comprises at least one convex part, in order to contact bearing substrate to stop that the electroplate liquid overflow is to pedestal.
One embodiment of the invention provide a kind of on substrate the method for electroplated conductive layer, comprise the electroplated substrate is provided, on the electroplated substrate, form patterned material layer, patterned material layer has at least one opening, expose the electroplated district on the electroplated substrate, bearing substrate is provided, and the electroplated substrate is arranged on the bearing substrate, bearing substrate and electroplated substrate are arranged on the pedestal, wear ring is arranged on the electroplated substrate, wherein wear ring comprises at least one convex part, make convex part contact bearing basement, provide electroplate liquid in the electroplated district, wherein wear ring is confined to electroplate liquid on the electroplated district, and convex part stops the electroplate liquid overflow to pedestal, and treats electroplating region to apply voltage and form conductive layer in the electroplated district.
In electroplanting device of the present invention, the setting by wear ring makes the salient on the wear ring prop up and contact bearing substrate, can effectively stop the overflow of electroplate liquid.Especially, when in the set electroplated substrate of bearing substrate because of need form when wearing the thinning of substrate conductive structure, avoid the used plating solution infiltration of electroplating technology to pedestal fractal key more really and effectively.Adopt the electroplanting device of the embodiment of the invention to come to go up the formation conductive layer, the yield of the element that forms and reliability are promoted in electroplated substrate (for example, the wafer after the thinning).
Description of drawings
Fig. 1 shows the diagrammatic cross-section of a kind of electroplanting device known for inventor.
Fig. 2 shows the diagrammatic cross-section of electroplanting device according to an embodiment of the invention.
Fig. 3 A-Fig. 3 F shows the series of process diagrammatic cross-section according to one embodiment of the invention electroplated conductive layer on substrate.
Fig. 4 A-Fig. 4 C shows the diagrammatic cross-section of the electroplanting device of several embodiment according to the present invention.
And the description of reference numerals in the above-mentioned accompanying drawing is as follows:
10,20,40,50,60～electroplanting device;
100,200,300,400～electroplated substrate;
102,202,302,402～bearing substrate;
104,204,304,404～pedestal;
106,206,306,406～material layer;
108,108a, 208,208a, 308,308a, 408～electroplate liquid;
110,210,310,410～wear ring;
110a, 110b, 210a, 210b, 210c, 310a, 310b, 310c, 410a, 410c～salient;
112,212,312,412～conductive electrode;
300a, 300b～surface;
307～opening;
322～insulation layer;
324～hole;
324 '～perforation;
326～conductive plunger;
328～crystal seed layer;
330～conductive layer.
Embodiment
Below, will go through the formation and the use-pattern of the embodiment of the invention.It should be noted that so embodiment provides many invention characteristics that can be applicable to widespread use face.The specific embodiment of being discussed is only made and the ad hoc fashion of using the embodiment of the invention for illustrating, unavailable scope with the restriction embodiment of the invention.
In addition, in different embodiment, may use multiple label or sign.These only repeat to have any association in order simply clearly to narrate the present invention, not necessarily represent between the different embodiment that discussed and/or the structure.Moreover, when address that one first material layer is positioned on one second material layer or on the time, comprise that first material layer directly contacts with second material layer or be separated with the situation of one or more other materials layers.And in the accompanying drawings, the shape of embodiment or thickness can enlarge, to simplify or convenient the sign.Moreover the element that does not illustrate among the figure or describe is for having the form of knowing usually known to the knowledgeable in the affiliated technical field.
Fig. 1 shows the diagrammatic cross-section of a kind of electroplanting device known for inventor.Yet, it should be noted that it is not in order to judge the prior art of patentability of the present invention, only problem in order to show that the contriver found.
As shown in Figure 1, electroplanting device 10 comprises the pedestal 104 in order to carrying electroplated substrate 100.Electroplated substrate 100 for example is a silicon wafer, and its thickness can be between about 1 micron to about 800 microns.When the thinner thickness of electroplated substrate 100, it can be carried on the bearing substrate 102 to make things convenient for the carrying out of subsequent technique.
As shown in Figure 1, can be formed with a patterned material layer 106 on electroplated substrate 100, it for example is a photo-resist layer.Patterned material layer 106 can have an opening (not shown), and it exposes the electroplated district (not shown) of electroplated substrate 100.
In order on electroplated substrate 100, to electroplate required conductive layer, wear ring 110 can be set on electroplated substrate 100.In the embodiment in figure 1, wear ring 110 centers on the electroplated district of electroplated substrate 100 and is provided with, and can be confined on the electroplated district electroplating required electroplate liquid 108.Wear ring 110 comprises salient 110a and 110b, in order to propping up patterned material layer 106 and electroplated substrate 100 respectively, and avoids electroplate liquid 108 overflows to pedestal 104.In addition, electroplanting device 10 also can comprise conductive electrode 112, and it for example is a conducting probe.Conductive electrode 112 electrically connects with electroplated district on the electroplated substrate 100, can apply voltage in order to treat electroplating region, and makes the conductive ion reduction in the electroplate liquid 108 and be deposited in the electroplated district and form required conductive layer.
Yet the present application people finds, after electroplating for some time, electroplate liquid 108 may pass through stopping of wear ring 110 and overflow to pedestal 104.As shown in Figure 1, Bu Fen electroplate liquid 108a overflow is to pedestal 104.Wherein, Bu Fen electroplate liquid 108a may infiltrate and increase bearing substrate 102 and pedestal 104 clinging power to each other at the interface between bearing substrate 102 and the pedestal 104.When electroplating technology finish and need with bearing substrate 102 together with the electroplated substrate 100 on it when pedestal 104 takes off, need apply big strength bearing substrate 102 is separated with pedestal 104 because of bearing substrate 102 and pedestal 104 clinging power to each other increase.In this case, electroplated substrate 100 easily is damaged because of the bending that is subjected to external force makes inner circuit and/or element.
For fear of taking place as the described situation of Fig. 1 embodiment, the embodiment of the invention provides a kind of electroplanting device, and it has the wear ring of particular design, can effectively avoid and/or reduce the electroplate liquid overflow to variety of issue that pedestal caused.Below, conjunction with figs. is illustrated the electroplanting device of the embodiment of the invention.
Fig. 2 shows the diagrammatic cross-section of electroplanting device according to an embodiment of the invention.As shown in Figure 2, electroplanting device 20 comprises the pedestal 204 in order to carrying electroplated substrate 200.Electroplated substrate 200 can be its thickness of semiconductor wafer (for example silicon wafer) can be between about 1 micron to about 800 microns.When the thinner thickness of electroplated substrate 200 (for example about 1 micron to about 100 microns), it can be carried on the bearing substrate 202 to make things convenient for the carrying out of subsequent technique.
As shown in Figure 2, can be formed with a patterned material layer 206 on electroplated substrate 200, it for example is a photo-resist layer.Patterned material layer 206 can have an opening (not shown), and it exposes the electroplated district (not shown) of electroplated substrate 200.It should be noted that so patterned material layer 206 is not limited to the photo-resist layer.In other embodiments, patterned material layer 206 can be dielectric layer, conductive layer or other materials layer.
In order on electroplated substrate 200, to electroplate required conductive layer, wear ring 210 can be set on electroplated substrate 200.The material of wear ring 210 for example includes, but is not limited to insulating material.In one embodiment, the material of wear ring 210 can comprise the insulating material with elasticity, antiacid caustic corrosion, for example be paracril (Nitrile Butadiene Rubber, NBR), hydrogenated nitrile-butadiene rubber (HNBR), fluorine unpigmented rubber (FKM) or perfluorinated rubbers (FFKM).In the embodiment of Fig. 2, wear ring 210 centers on the electroplated district of electroplated substrate 200 and is provided with, and can be confined on the electroplated district electroplating required electroplate liquid 208.In the embodiment of Fig. 2, wear ring 210 comprises at least one salient 210c through particular design.Salient 210c is in order to contact and prop up bearing basement 202 and can avoid electroplate liquid 208 overflows to pedestal 204.
In addition, wear ring 210 also alternative comprises at least one salient 210a and at least one salient 210b, in order to contact and to prop up patterned material layer 206 and electroplated substrate 200 respectively, can further avoid electroplate liquid 208 overflows to pedestal 204.In the embodiment of Fig. 2, because the salient 210c of wear ring 210 contact also props up bearing basement 202, even the electroplate liquid 208a overflow of part is to bearing basement 202, the salient 210c that contacts and prop up bearing basement 202 can effectively stop can avoid electroplate liquid 208a overflow to pedestal 204 by the electroplate liquid 208a of overflow.Therefore, when electroplating technology finish and need with bearing substrate 202 together with the electroplated substrate 200 on it when pedestal 204 takes off, because of not infiltrating electroplate liquid 208a in bearing substrate 202 and pedestal 204 interface to each other, in this case, can easily bearing substrate 202 and electroplated substrate 200 be taken off, avoid electroplated substrate 100 to be subjected to the bending of external force and inner circuit and/or element are damaged.
In addition, electroplanting device 20 also can comprise conductive electrode 212, and it for example is a conducting probe.Conductive electrode 212 electrically connects with electroplated district on the electroplated substrate 200, can apply voltage in order to treat electroplating region, and makes the conductive ion reduction in the electroplate liquid 208 and be deposited in the electroplated district and form required conductive layer.For example, in one embodiment, the preformed crystal seed layer of institute electrically connects in conductive electrode 212 and the electroplated district.In one embodiment, conductive electrode 212 can be the part of wear ring 210.In another embodiment, the part of conductive electrode 212 non-hermetic seal 210 and not linking to each other with wear ring 210.
Fig. 3 A-Fig. 3 F shows the series of process diagrammatic cross-section according to one embodiment of the invention electroplated conductive layer on substrate, and it adopts the electroplanting device of the embodiment of the invention to carry out.
As shown in Figure 3A, provide electroplated substrate 300, it for example can be semiconductor wafer.In one embodiment, pre-defined in the electroplated substrate 300 have a hole 324, and its surperficial 300a from electroplated substrate 300 extends towards another surperficial 300b.Also be formed with insulation layer 322 on the electroplated substrate 300, it is formed on the surperficial 300a, and extends on the sidewall and bottom of hole 324.In hole 324, also be filled with conductive plunger 326.After follow-up grinding technics, conductive plunger 326 will become in the electroplated substrate 300 wear the substrate conductive structure (through-substrate via, TSV).The material of insulation layer 322 for example includes, but is not limited to silicon oxide, silicon nitride, silicon oxynitride or aforesaid combination.The material of conductive plunger 326 for example includes, but is not limited to copper, aluminium, gold, platinum, tungsten or aforesaid combination.
Then, shown in Fig. 3 B, provide bearing substrate 302, and electroplated substrate 300 is provided with thereon.For example, can be between the surperficial 300a of electroplated substrate 300 and bearing substrate 302 coating adhesive coating (not shown) and electroplated substrate 300 is fixed on the bearing substrate 302.Bearing substrate 302 can include, but is not limited to semiconductor material or insulating material.
Shown in Fig. 3 C, then begin to carry out thinning technology and conductive plunger 326 is exposed with thinning electroplated substrate 300 from the surperficial 300b of electroplated substrate 300.The thinning technology that is fit to for example is mechanical mill or the grinding of chemical based tool etc.In one embodiment, after 300 thinnings of electroplated substrate, an end of conductive plunger 326 protrudes from the surperficial 300b of electroplated substrate 300.In addition, after 300 thinnings of electroplated substrate, the hole 324 that originally was formed in the electroplated substrate 300 has now run through electroplated substrate 300 and has become perforation 324 '.
Then, shown in Fig. 3 D, on surface 300 and the conductive plunger 326 that exposes, form carry out of crystal seed layer 328 with convenient follow-up electroplating technology.Crystal seed layer 328 can for example form with physical vaporous deposition, and its material for example is a copper.In addition, the preferable diffused barrier layer (not shown) that is formed with between crystal seed layer 328 and the electroplated substrate 300, its material for example is Ti or TiN, (for example can avoid electro-conductive material, copper) diffuse into electroplated substrate 300, and can increase the tackiness between crystal seed layer 328 and the electroplated substrate 300.
Shown in Fig. 3 D, after forming crystal seed layer 328, on electroplated substrate 300, form patterned material layer 306.Patterned material layer 306 can comprise dielectric layer, conductive layer, insulation layer, photo-resist layer or other materials layer.In one embodiment, patterned material layer 306 is a photo-resist layer, and has at least one opening 307.Opening 307 exposes the electroplated district (that is the crystal seed layer 328 shared zones of, being exposed in the opening 307) on the electroplated substrate 300.Patterned material layer 306 can be avoided when electroplating technology, and plated with conductive material is deposited on the zone that need not form conductive layer on the electroplated substrate 300.
Then, shown in Fig. 3 E, bearing substrate 302 and electroplated substrate 300 are arranged on the pedestal 304.Then, wear ring 310 is arranged on the electroplated substrate 300.In the embodiment of Fig. 3 E, wear ring 310 centers on the electroplated district of electroplated substrate 300 and is provided with, and can be confined on the electroplated district electroplating required electroplate liquid 308.Wear ring 310 comprises at least one salient 310c through particular design.Salient 310c is in order to contact and prop up bearing basement 302 and can avoid electroplate liquid 308 overflows to pedestal 304.
In addition, wear ring 310 also alternative comprises at least one salient 310a and at least one salient 310b, in order to contact and to prop up patterned material layer 306 and electroplated substrate 300 respectively, can further avoid electroplate liquid 308 overflows to pedestal 304.In the embodiment of Fig. 3 E, because the salient 310c of wear ring 310 contact also props up bearing basement 302, even the electroplate liquid 308a overflow of part is to bearing basement 302, the salient 310c that contacts and prop up bearing basement 302 can effectively stop can avoid electroplate liquid 308a overflow to pedestal 304 by the electroplate liquid 308a of overflow.
Then, can apply power supply by the electroplated district (being on the crystal seed layer 328 of opening 307 bottoms) that treats electroplating substrate 300 so that the metal ion deposition in the electroplate liquid is reduced on crystal seed layer 328.For example, can will electroplate required power supply by conductive electrode 312 and be applied to crystal seed layer 328.
Therefore, shown in Fig. 3 F, can in the electroplated district, form conductive layer 330 by above-mentioned electroplating technology.Then, alternative remove patterned material layer and under crystal seed layer.When electroplating technology finish and need with bearing substrate 302 together with the electroplated substrate 300 on it when pedestal 304 takes off, because of not infiltrating electroplate liquid 308a in bearing substrate 302 and pedestal 304 interface to each other.In this case, can easily bearing substrate 302 and electroplated substrate 300 be taken off, avoid electroplated substrate 300 to be subjected to the bending of external force and inner circuit and/or element are damaged.
In one embodiment, the wear ring of the embodiment of the invention comprises a plurality of salients, and it contacts to stop the overflow of electroplate liquid with the surface of different heights respectively.It should be noted that so the wear ring of the embodiment of the invention is not limited thereto.For example, the salient of wear ring can be integrated continuous structure.Fig. 4 A-Fig. 4 C shows the diagrammatic cross-section of the electroplanting device of several embodiment according to the present invention, and it has different wear ring designs respectively.
In the embodiment of Fig. 4 A, electroplanting device 40 comprises pedestal 404 and wear ring 410.Pedestal 404 wherein is formed with patterned material layer 406 on the electroplated substrate 400 in order to carrying bearing substrate 402 and setting electroplated substrate 400 thereon, and its opening exposes the electroplated district on the electroplated substrate 400.Electroplanting device 40 also comprises conductive electrode 412, required power supply when electroplated conductive layer to be provided.The wear ring 410 of electroplanting device 40 is through special design, and its salient 410a also contacts electroplated substrate 400 and patterned material layer 406 except contact bearing substrate 402, can effectively avoid electroplate liquid 408 overflows to pedestal 404.
Fig. 4 B shows the electroplanting device 50 of another embodiment, and its structure is similar to the embodiment of Fig. 4 A, and therefore same or analogous element will adopt same or analogous label to indicate.Main difference between the electroplanting device 50 and 40 is the design of wear ring.In electroplanting device 50, wear ring 410 comprises salient 410a and salient 410c, and wherein salient 410a contacts electroplated substrate 400 and patterned material layer 406, and another salient 410c contact bearing substrate 402.Similarly, the wear ring 410 of electroplanting device 50 can effectively avoid electroplate liquid 408 overflows to pedestal 404.
Fig. 4 C shows the electroplanting device 60 of another embodiment, and its structure is similar to the embodiment of Fig. 4 A, and therefore same or analogous element will adopt same or analogous label to indicate.Main difference between the electroplanting device 60 and 40 is the design of wear ring.In electroplanting device 60, wear ring 410 comprises salient 410a and salient 410c, salient 410a contact patterns formed material layer 406 wherein, and another salient 410c contact electroplated substrate and bearing substrate 402.Similarly, the wear ring 410 of electroplanting device 60 can effectively avoid electroplate liquid 408 overflows to pedestal 404.
As mentioned above, in the electroplanting device of the embodiment of the invention, the setting by wear ring makes the salient on the wear ring prop up and contact bearing substrate, can effectively stop the overflow of electroplate liquid.Especially, when in the set electroplated substrate of bearing substrate because of need form when wearing the thinning of substrate conductive structure, avoid the used plating solution infiltration of electroplating technology to pedestal fractal key more really and effectively.Adopt the electroplanting device of the embodiment of the invention to come to go up the formation conductive layer, the yield of the element that forms and reliability are promoted in electroplated substrate (for example, the wafer after the thinning).
Though the present invention with several preferred embodiments openly as above; yet it is not in order to limit the present invention; any those of ordinary skills; without departing from the spirit and scope of the present invention; when can changing arbitrarily and retouching, so protection scope of the present invention is as the criterion when looking the scope that claim defined of enclosing.
Claims (14)
1. electroplanting device comprises:
One pedestal in order to carry a bearing substrate and to be arranged at an electroplated substrate on this bearing substrate, wherein has a patterned material layer on this electroplated substrate, and this patterned material layer has at least one opening, exposes the electroplated district on this electroplated substrate; And
One wear ring is used to be arranged on this electroplated substrate so that an electroplate liquid is confined on this electroplated district, and wherein the sealing ring comprises at least one convex part, in order to contact this bearing substrate to stop that this electroplate liquid overflow is to this pedestal.
2. electroplanting device as claimed in claim 1, wherein this convex part contacts this electroplated substrate and/or this patterned material layer to stop that this electroplate liquid overflow is to this pedestal.
3. electroplanting device as claimed in claim 1, wherein the sealing ring also comprises at least one second salient, in order to contact this electroplated substrate to stop that this electroplate liquid overflow is to this pedestal.
4. electroplanting device as claimed in claim 1 or 2, wherein the sealing ring also comprises at least one the 3rd salient, in order to contact this patterned material layer to stop that this electroplate liquid overflow is to this pedestal.
5. electroplanting device as claimed in claim 1, wherein this patterned material layer comprises a photo-resist layer.
6. electroplanting device as claimed in claim 1, wherein this electroplated substrate comprises semiconductor wafer.
7. electroplanting device as claimed in claim 6, wherein the thickness of this semiconductor wafer is between about 1 micron to about 800 microns.
8. electroplanting device as claimed in claim 1 also comprises a conductive electrode, electrically connects this electroplated district on this electroplated substrate.
9. electroplanting device as claimed in claim 1, wherein this electroplated substrate comprises and wears the substrate conductive structure.
10. the method for an electroplated conductive layer on substrate comprises:
One electroplated substrate is provided;
Form a patterned material layer on this electroplated substrate, this patterned material layer has at least one opening, exposes the electroplated district on this electroplated substrate;
One bearing substrate is provided, and this electroplated substrate is arranged on this bearing substrate;
This bearing substrate and this electroplated substrate are arranged on the pedestal;
One wear ring is arranged on this electroplated substrate, and wherein the sealing ring comprises at least one convex part, makes this convex part contact this bearing basement;
Provide an electroplate liquid in this electroplated district, wherein the sealing ring is confined to this electroplate liquid on this electroplated district, and this convex part stops that this electroplate liquid overflow is to this pedestal; And
This electroplated district is applied voltage and form a conductive layer in this electroplated district.
11. as claimed in claim 10 on substrate the method for electroplated conductive layer, wherein the sealing ring also comprises at least one second salient, when making this convex part contact this bearing basement, this second salient contacts this electroplated substrate to stop that this electroplate liquid overflow is to this pedestal.
12. as claim 10 or 11 described on substrate the method for electroplated conductive layer, wherein the sealing ring also comprises at least one the 3rd salient, when making this convex part contact this bearing basement, the 3rd salient contacts this patterned material layer to stop that this electroplate liquid overflow is to this pedestal.
13. as claimed in claim 10 on substrate the method for electroplated conductive layer, wherein when this convex part that makes the sealing ring contacts this bearing basement, this convex part contacts this electroplated substrate and/or this patterned material layer to stop that this electroplate liquid overflow is to this pedestal.
14. as claimed in claim 10 on substrate the method for electroplated conductive layer, wherein this electroplated substrate comprises and wears the substrate conductive structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010173762.3A CN102234830B (en) | 2010-05-06 | 2010-05-06 | Electroplating apparatus and method for electroplating conducting layers on substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010173762.3A CN102234830B (en) | 2010-05-06 | 2010-05-06 | Electroplating apparatus and method for electroplating conducting layers on substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102234830A true CN102234830A (en) | 2011-11-09 |
| CN102234830B CN102234830B (en) | 2014-04-16 |
Family
ID=44885935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010173762.3A Active CN102234830B (en) | 2010-05-06 | 2010-05-06 | Electroplating apparatus and method for electroplating conducting layers on substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102234830B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111326477A (en) * | 2018-12-14 | 2020-06-23 | 中芯集成电路（宁波）有限公司 | Electroplating method |
| CN112981506A (en) * | 2021-02-09 | 2021-06-18 | 苏州晶洲装备科技有限公司 | Electrochemical deposition equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040026785A1 (en) * | 2002-08-12 | 2004-02-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| TWM272226U (en) * | 2005-03-18 | 2005-08-01 | Jun Star Entpr Co Ltd | Wafer electroplating fixture |
| CN1834000A (en) * | 2006-04-07 | 2006-09-20 | 美新半导体（无锡）有限公司 | Round piece class airtight packing technique having low depth-width ratio through hole |
-
2010
- 2010-05-06 CN CN201010173762.3A patent/CN102234830B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040026785A1 (en) * | 2002-08-12 | 2004-02-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| TWM272226U (en) * | 2005-03-18 | 2005-08-01 | Jun Star Entpr Co Ltd | Wafer electroplating fixture |
| CN1834000A (en) * | 2006-04-07 | 2006-09-20 | 美新半导体（无锡）有限公司 | Round piece class airtight packing technique having low depth-width ratio through hole |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111326477A (en) * | 2018-12-14 | 2020-06-23 | 中芯集成电路（宁波）有限公司 | Electroplating method |
| CN111326477B (en) * | 2018-12-14 | 2022-12-09 | 中芯集成电路（宁波）有限公司 | Electroplating method |
| CN112981506A (en) * | 2021-02-09 | 2021-06-18 | 苏州晶洲装备科技有限公司 | Electrochemical deposition equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102234830B (en) | 2014-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100770464B1 (en) | Device providing electrical contact to the surface of a semiconductor workpiece during metal plating | |
| EP2601822B1 (en) | Method to form solder deposits and non-melting bump structures on substrates | |
| US7815778B2 (en) | Electro-chemical mechanical planarization pad with uniform polish performance | |
| TWI573205B (en) | Metal bump structure | |
| TWI555090B (en) | Electronic device and method for producing same | |
| CN100452385C (en) | Semiconductor element and manufacturing method thereof | |
| CN103474395B (en) | A kind of TSV planarization method | |
| CN102234830B (en) | Electroplating apparatus and method for electroplating conducting layers on substrate | |
| US20060182879A1 (en) | Microelectronic workpiece for electrochemical deposition processing and methods of manufacturing and using such microelectronic workpieces | |
| CN104752379A (en) | Integrated Circuits Including Copper Pillar Structures And Methods For Fabricating The Same | |
| CN101996858A (en) | Method of manufacturing semiconductor device | |
| JP2007005401A (en) | Semiconductor device and its manufacturing method | |
| CN103915357A (en) | Manufacturing method of superfine interval micro protruding point | |
| US6841458B2 (en) | Dopant interface formation | |
| CN106129026A (en) | Semiconductor structure and preparation method thereof | |
| TWI410527B (en) | Electroplating apparatus and method for plating conducting layer on substrate | |
| CN103839776B (en) | Semiconductor structure and forming method thereof | |
| CN103547079B (en) | Method for manufacturing soft dielectric circuit | |
| TW200403122A (en) | Polishing method, polishing apparatus, and method for producing semiconductor device | |
| CN103296039B (en) | A kind of backside illuminated image sensor deep groove lithographic method | |
| US8317995B2 (en) | Electrode tool for electrochemical machining and method of manufacturing the same | |
| CN103367240A (en) | Copper-pollution prevention method in back-thinning process of through silicon via | |
| CN111384016A (en) | Wafer bump and method for manufacturing wafer bump | |
| KR100731082B1 (en) | Method for fabricating semiconductor device | |
| CN102044417B (en) | Semiconductor device and method of forming pattern of insulating resin film on surface of substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |