CN102226986A - Manufacturing method for ultrathin semiconductor device - Google Patents
Manufacturing method for ultrathin semiconductor device Download PDFInfo
- Publication number
- CN102226986A CN102226986A CN 201110175117 CN201110175117A CN102226986A CN 102226986 A CN102226986 A CN 102226986A CN 201110175117 CN201110175117 CN 201110175117 CN 201110175117 A CN201110175117 A CN 201110175117A CN 102226986 A CN102226986 A CN 102226986A
- Authority
- CN
- China
- Prior art keywords
- ultra
- liner
- product sheet
- thin product
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a manufacturing method for an ultrathin semiconductor device, which adopts an adhesive material and a gasket, the adhesive material is continuously and uniformly coated on the peripheral area of the upper surfaces of the flat edge and the flat edge of the gasket, one surface of an ultrathin product sheet to be processed is adhered on the upper surface of the gasket, keeping the flat edges aligned, then processing the other surface of the ultrathin product sheet by conventional ion implantation, dry etching and other processes, after the processing is finished, separating the ultrathin product sheet from the upper surface of the gasket, finally removing the adhesive materials on the ultrathin product sheet and the gasket cleanly, the processing method has the characteristics of simplicity, stability, low cost and easy realization, the lining can be repeatedly recycled, the method is particularly suitable for the ultrathin sheet back process processing in the manufacturing process of the ultrathin power semiconductor device.
Description
Technical field
The present invention relates to the manufacture method of semiconductor device, particularly a kind of manufacture method that is used for the ultra-thin semiconductor device, this method are suitable for the superthin section back process processing in the ultra-thin power semiconductor manufacture process.
Background technology
In fabrication of semiconductor device, in order to obtain mechanical performance, electrical property preferably, and the needs of subsequent machining technology, generally need be with the product sheet attenuate, the thickness behind the attenuate is usually about 200 ~ 400 microns.And for some special semiconductor device, especially some power semiconductors, in order to obtain thinner chip, perhaps in order to satisfy the requirement of more excellent electrical property, the thickness of product sheet need be subtracted thinner, such as reaching below 200 microns even reaching below 100 microns, promptly be processed into so-called superthin section, and behind attenuate, also will carry out processes such as back side ion injection, back side dry etching.
But the ultra-thin product sheet that its thickness subtracts thinly excessively no longer has enough rigidity, very easily deformation and fragment takes place in passing sheet, compressing tablet process, even can't realize passing normally the sheet operation at all.Therefore, the manufacture method of ultra-thin product sheet is subjected to people in field of manufacturing semiconductor devices always and pays close attention to, and becomes the problem that relevant manufacturing industry needs emphasis to solve.
For solving such problem, patent CN101452815A discloses and a kind of two flake products sheets has been put together face-to-face, the method for the discrete several edges of chip being glued with polyimides.U.S. Pat 7491966 and US7803695 disclose and have a kind ofly simultaneously etched groove (Recesses) at product sheet, and this face is affixed on the liner (Carrier Wafer), by heating, form the cavity layer between groove on the product sheet and the carrying tablet, last method of separating silicon chip along this cavity layer again.U.S. Pat 6930023 discloses a kind of by subsides pressure sensitive adhesive double coated (Double-sided adhesive sheet) on liner, and pressure sensitive adhesive double coated bonding plane is bigger than product surface, at last by heating the method for products of separated sheet and liner.
Summary of the invention
Purpose of the present invention is exactly in order to solve the fragment problems in the ultra-thin product sheet processing, a kind of manufacture method that is used for the ultra-thin semiconductor device is provided, this method is suitable for the manufacturing processing of ultra-thin semiconductor device, is particularly suitable for the superthin section back process processing in the ultra-thin power semiconductor manufacture process.
The present invention realizes by such technical scheme: a kind of manufacture method that is used for the ultra-thin semiconductor device, it is characterized in that, and comprise the steps:
Step 1, preparation liner;
Step 2, continuously equably in the neighboring area of the liner upper surface adjacent with the flat limit of liner and both sides, flat limit
Coat adhesives;
Step 3, with the one side of ultra-thin product sheet towards the liner upper surface and be affixed on the liner upper surface paster
The time, guarantee that the flat limit of ultra-thin product sheet aligns mutually with the flat limit of liner, fit good for two
The position; The another side of ultra-thin product sheet then is exposed to the surface, dries by the fire sheet behind the paster and handles;
Step 4, the liner that will post ultra-thin product sheet are sent to common process such as ion injection, dry etching and establish
In being equipped with, the one side that ultra-thin product sheet is exposed to the surface is carried out required processes processing;
Step 5, probe between ultra-thin product sheet and the liner upper surface edge with the never bonding zone of wedge tool
Periphery is shown ultra-thin product sheet by the bonding force of mechanical force removal adhesives from liner
Face separates; Perhaps, the baking sheet is shown ultra-thin product sheet with wedge tool then from liner earlier
Face separates;
Step 6, spend the adhesives solvent and thoroughly remove adhesives on ultra-thin product sheet and the liner, and will
Ultra-thin product sheet and liner clean up.
The diameter of described liner, flat limit size are identical with ultra-thin product sheet; Mechanical strength enough satisfies transmission and the not requirement of fragment of pressure holding in the common process; And the surfacing of liner, can satisfy upper surface fit ultra-thin product sheet, lower surface transmit and pressure holding in the not requirement of fragment; Liner can be silicon materials, also can be germanium material, germanium silicon material, carbofrax material, ceramic material, perhaps their combination.
Described adhesives has enough viscosity ultra-thin product sheet to be sticked on the upper surface of liner, and in common process transmission, pressure holding and the course of processing, do not produce come off, situation such as slippage, adhesives can be a positive photoresist, perhaps negative photoresist, perhaps kin other stickum.
Described ultra-thin product sheet can be silicon materials, also can be strained silicon (Strained Silicon) material, germanium material, germanium silicon material, carbofrax material, perhaps their combination.
The beneficial effect that the present invention produced is: adhesives and liner obtain easily, liner is also renewable to be used repeatedly, cost is low, simple to operate, no pyroprocess does not influence the product electrical characteristics, and adhesive strength enough satisfies mechanical transmission, the force request of ion injection pressure ring pressure holding etc. separates the back adhesives and removes clean noresidue easily.
Description of drawings
Fig. 1: liner upper surface adhesives applies position view among the present invention;
Fig. 2: the ultra-thin product sheet of liner upper surface is pasted schematic diagram among the present invention;
Fig. 3: ultra-thin product sheet separates schematic diagram from the liner upper surface among the present invention.
Embodiment
The invention will be further described below in conjunction with drawings and Examples:
A kind of manufacture method that is used for the ultra-thin semiconductor device, can realize as follows:
(1) with reference to Fig. 1, the silicon chip that preparing thickness is the 0.2-0.7 millimeter, diameter peace limit size is identical with ultra-thin product sheet, upper surface polishes and lower surface polishes is as liner 100, neighboring area at the both sides, peace limit, flat limit of silicon backing wafer 100 upper surface is coated negative photoresist 101 continuously equably, the thickness of negative photoresist is below 1 millimeter, and width is in 3 millimeters on periphery.
(2) with reference to Fig. 2, with the surface of ultra-thin silicon product sheet towards the silicon backing wafer upper surface and be affixed on the silicon backing wafer upper surface, keep the ultra-thin silicon product sheet to align mutually during paster with the flat limit of silicon backing wafer, two applyings do not misplace, expose at the back side of ultra-thin silicon product sheet, dries by the fire sheet behind the bonding die and handle in 130-150 ℃ baking oven.
(3) silicon backing wafer that will post the ultra-thin silicon product sheet is sent in the ion implantation device of the back side, back side ion is carried out at the back side of ultra-thin silicon product sheet inject processed.
(4) with reference to Fig. 3, after the baking sheet is handled in 130-150 ℃ baking oven, probe between ultra-thin product sheet and the liner upper surface with the never bonding zone of chopper,, ultra-thin product sheet is separated from the liner upper surface along the bonding force of periphery by mechanical force removal adhesives.
(5) thoroughly remove negative photoresist on ultra-thin silicon product sheet and the silicon backing wafer with organic liquid that removes photoresist, and ultra-thin silicon product sheet and silicon backing wafer are cleaned up.
The characteristics of said method are: adopt to be easier to obtain, positive photoresist cheaply, perhaps negative photoresist etc. is as adhesives, the diameter that employing is easier to obtain, the size on flat limit are identical with ultra-thin product sheet, mechanical performance, corrosion resisting property identical or other material piece suitable with ultra-thin product sheet is as liner; Adopt the method for craft or mechanical bonding die, burst; According to the character of selecting adhesives for use, directly bonding die and burst perhaps selectively, increase baking processing behind bonding die, before the burst; During paster, between ultra-thin product sheet and liner, stay a part of Non-sticking, be convenient to burst; The position that the flat limit Chang Zuowei of place aims at, detects in the conventional equipment is the place of touching easily, also is simultaneously the place that pressure holding stress is concentrated, and the present invention adopts flat avris bonding die mode; The thickness of adhesives and width are as far as possible little under the prerequisite that keeps bonding force, so that easily it is removed clean behind the burst.
According to the above description, can realize the solution of the present invention in conjunction with art technology.
Claims (4)
1. a manufacture method that is used for the ultra-thin semiconductor device is characterized in that, comprises the steps:
Step 1, preparation liner;
Step 2, continuously equably in the neighboring area of the liner upper surface adjacent with the flat limit of liner and both sides, flat limit
Coat adhesives;
Step 3, with the one side of ultra-thin product sheet towards the liner upper surface and be affixed on the liner upper surface paster
The time, guarantee that the flat limit of ultra-thin product sheet aligns mutually with the flat limit of liner, fit good for two
The position; The another side of ultra-thin product sheet then is exposed to the surface, dries by the fire sheet behind the paster and handles;
Step 4, the liner that will post ultra-thin product sheet are sent to common process such as ion injection, dry etching and establish
In being equipped with, the one side that ultra-thin product sheet is exposed to the surface is carried out required processes processing;
Step 5, probe between ultra-thin product sheet and the liner upper surface edge with the never bonding zone of wedge tool
Periphery is shown ultra-thin product sheet by the bonding force of mechanical force removal adhesives from liner
Face separates; Perhaps, the baking sheet is shown ultra-thin product sheet with wedge tool then from liner earlier
Face separates;
Step 6, spend the adhesives solvent and thoroughly remove adhesives on ultra-thin product sheet and the liner, and will
Ultra-thin product sheet and liner clean up.
2. a kind of manufacture method that is used for the ultra-thin semiconductor device according to claim 1 is characterized in that: the diameter of liner, flat limit size are identical with ultra-thin product sheet; Mechanical strength enough satisfies transmission and the not requirement of fragment of pressure holding in the common process; And the surfacing of liner, can satisfy upper surface fit ultra-thin product sheet, lower surface transmit and pressure holding in the not requirement of fragment; Liner can be silicon materials, also can be germanium material, germanium silicon material, carbofrax material, ceramic material, perhaps their combination.
3. a kind of manufacture method that is used for the ultra-thin semiconductor device according to claim 1, it is characterized in that: adhesives has enough viscosity ultra-thin product sheet to be sticked on the upper surface of liner, and in common process transmission, pressure holding and the course of processing, do not produce come off, the situation of slippage, adhesives can be a positive photoresist, perhaps negative photoresist, perhaps kin other stickum.
4. a kind of manufacture method that is used for the ultra-thin semiconductor device according to claim 1, it is characterized in that: ultra-thin product sheet can be silicon materials, also can be strained silicon Strained Silicon material, germanium material, germanium silicon material, carbofrax material, perhaps their combination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110175117 CN102226986B (en) | 2011-06-27 | 2011-06-27 | Manufacturing method for ultrathin semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110175117 CN102226986B (en) | 2011-06-27 | 2011-06-27 | Manufacturing method for ultrathin semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102226986A true CN102226986A (en) | 2011-10-26 |
| CN102226986B CN102226986B (en) | 2013-01-16 |
Family
ID=44807948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110175117 Active CN102226986B (en) | 2011-06-27 | 2011-06-27 | Manufacturing method for ultrathin semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102226986B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102431960A (en) * | 2011-12-07 | 2012-05-02 | 华中科技大学 | Silicon through hole etching method |
| CN103197507A (en) * | 2013-02-22 | 2013-07-10 | 中国科学院半导体研究所 | Contact exposure method for ultrathin semiconductor chip |
| CN110459501A (en) * | 2019-05-30 | 2019-11-15 | 中国电子科技集团公司第五十五研究所 | A kind of reinforcing holding structure and preparation method thereof for disk to be thinned |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010038972A1 (en) * | 1998-11-20 | 2001-11-08 | Christopher F. Lyons | Ultra-thin resist shallow trench process using metal hard mask |
| US7329364B2 (en) * | 2004-08-10 | 2008-02-12 | Industrial Technology Research Institute | Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film |
| CN101350332A (en) * | 2007-07-20 | 2009-01-21 | 万国半导体股份有限公司 | Ultra thin wafers having an edge support ring and manufacture method thereof |
-
2011
- 2011-06-27 CN CN 201110175117 patent/CN102226986B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010038972A1 (en) * | 1998-11-20 | 2001-11-08 | Christopher F. Lyons | Ultra-thin resist shallow trench process using metal hard mask |
| US7329364B2 (en) * | 2004-08-10 | 2008-02-12 | Industrial Technology Research Institute | Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film |
| CN101350332A (en) * | 2007-07-20 | 2009-01-21 | 万国半导体股份有限公司 | Ultra thin wafers having an edge support ring and manufacture method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102431960A (en) * | 2011-12-07 | 2012-05-02 | 华中科技大学 | Silicon through hole etching method |
| CN103197507A (en) * | 2013-02-22 | 2013-07-10 | 中国科学院半导体研究所 | Contact exposure method for ultrathin semiconductor chip |
| CN103197507B (en) * | 2013-02-22 | 2015-05-06 | 中国科学院半导体研究所 | Contact exposure method for ultrathin semiconductor chip |
| CN110459501A (en) * | 2019-05-30 | 2019-11-15 | 中国电子科技集团公司第五十五研究所 | A kind of reinforcing holding structure and preparation method thereof for disk to be thinned |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102226986B (en) | 2013-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6908027B2 (en) | Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process | |
| KR101299719B1 (en) | Process for fabricating a multilayer structure with trimming using thermo-mechanical effects | |
| CN103035580B (en) | Temporary bonding and dissociating process method applied to thin silicon slices | |
| CN103035482B (en) | The interim bonding method of silicon chip | |
| US8298916B2 (en) | Process for fabricating a multilayer structure with post-grinding trimming | |
| CN106935547B (en) | Manufacturing method of flexible display device and flexible display device | |
| CN102751207B (en) | Wafer temporary bonding method | |
| KR101503326B1 (en) | A method for de-bonding of device wafer and carrier wafer and apparatus for de-bonding | |
| CN102226986B (en) | Manufacturing method for ultrathin semiconductor device | |
| JP2010283097A (en) | Double sided adhesive sheet | |
| TWI545685B (en) | Supporting member separation apparatus and supporting member separation method | |
| CN106098864A (en) | A kind of pasting method in LED gallium arsenide substrate reduction process | |
| WO2016090636A1 (en) | Temporary bonding and separation method for wafers | |
| JP6055597B2 (en) | Sticking method and sticking device | |
| JP2016030364A (en) | Splicing method and splicing apparatus for laminated board | |
| TW201413834A (en) | Bonding of thin lamina | |
| JP2016030413A (en) | Splicing method and splicing apparatus for laminated board | |
| CN104637824A (en) | Temporary bonding and dissociation technology method for silicon wafer | |
| WO2015087763A1 (en) | Sealing sheet adhesion method | |
| CN105280541A (en) | Temporary bonding method and bonding-removing method for ultrathin semiconductor wafer | |
| JP6114422B2 (en) | Bonding substrate cutting device | |
| JP5795272B2 (en) | Method for manufacturing ceramic element | |
| TWI783530B (en) | Temporarily bonding laminated body and application of wafer thinning preparation method | |
| CN107932254A (en) | A kind of method of ultra-thin wafers planarization processing clamping | |
| CN102700187A (en) | Double-sided release film, heat-conducting rubber film including release film, and application of such release film in production process of aluminum substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |