CN102225490A - Bias power supply device for supersonic-frequency pulsed electron beam welding - Google Patents
Bias power supply device for supersonic-frequency pulsed electron beam welding Download PDFInfo
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- CN102225490A CN102225490A CN2011101413313A CN201110141331A CN102225490A CN 102225490 A CN102225490 A CN 102225490A CN 2011101413313 A CN2011101413313 A CN 2011101413313A CN 201110141331 A CN201110141331 A CN 201110141331A CN 102225490 A CN102225490 A CN 102225490A
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Abstract
The invention is a bias power supply device for supersonic-frequency pulsed electron beam welding. The device is composed of a step-down rectifier-filter circuit, a peak bias voltage generating circuit, a base bias voltage generating circuit, a peak pulsed bias voltage switching circuit and a base pulsed bias voltage switching circuit. When a power transistor Q5 of the peak pulsed bias voltage switching circuit is opened and a power transistor Q6 of the base pulsed bias voltage switching circuit is closed, a peak bias voltage Up generated by the peak bias voltage generating circuit causes a peak pulsed bias voltage Upp to act on the gate of an electron gun, thus obtaining a peak pulse beam current Ipp; and when the power transistor Q5 of the peak pulsed bias voltage switching circuit is closed and the power transistor Q6 of the base pulsed bias voltage switching circuit is opened, a base bias voltage Ub generated by the base bias voltage generating circuit causes a base pulsed bias voltage Ubp to act on the gate of the electron gun, thus obtaining a base pulse beam current Ibp. The bias power supply device for supersonic-frequency pulsed electron beam welding provided by the invention is capable of realizing that the pulsed bias voltage frequency is not less than 20 kHz and the frequency of the pulse beam current is greater than or equal to 20 kHz correspondingly.
Description
Technical field
The present invention is a kind of grid bias power supply device that is applicable to the welding of superaudio pulsed electron beam, specifically, is a kind of electron beam welding that is applicable to, the control electron beam reaches the topological circuit structure of silent-sound grid bias power supply, belongs to the electronic circuit technology field.
Background technology
In the electron beam welding field, for the electron beam welding of continuous line, the pulsed beam current electron beam welding of constant power can effectively improve weld penetration, welding seam deep width ratio; The workpiece of welding condition of equivalent thickness can reduce the heat input, reduces welding deformation.The pulsed electron beam welding, the pulsed beam current frequency is one of important technical parameter that influences welding quality.For the electron beam welding power supply of 60kV～150kV, in by pulse transformer action of low-voltage pulse being boosted to/high-voltage pulse or in/high-voltage output end obtain by chopping way in/technology of high-voltage pulse line, implement very difficulty.Let alone the adjusting of pulsed beam current frequency therefore.Usually three grades of electron guns are adopted in electron beam welding, change the line size by the magnitude of voltage of regulating bias circuit.Therefore, can adopt the impulse modulation strategy to obtain bias pulse, to reach the purpose of obtaining pulsed beam current, pulsed bias power supply (seeing shown in Figure 1) commonly used both at home and abroad at present, the frequency of its pulsed bias causes the frequency of pulsed electron beam welding line to be difficult to be improved below 1kHz.For the pulsed electron beam welding, along with the significantly raising of pulsed beam current frequency, not only can at utmost bring into play " keyhole " effect in the welding process, but also will produce special galvanomagnetic-effect, butt welded seam fusion penetration, joint microstructure produce appreciable impact.When big thickness workpiece welded, the welding line that needs will be realized up to a hundred milliamperes of superaudio pulsed beam currents in technology up to up to a hundred milliamperes, adopted conventional pulsed bias power supply control technology to implement very difficult.Even can realize, serious distortion can take place in the bias pulse waveform, will have a strong impact on the pulsed beam current quality.
Among Fig. 1, the 220V industrial-frequency alternating current connects with the decompression rectifier filter circuit of conventional pulsed bias power supply, and the direct current of decompression rectifier filter circuit output changes into high frequency ac signal through half-bridge inversion circuit, and high frequency ac signal is through the first transformer B
1Boosting becomes direct current after transferring to voltage doubling rectifing circuit, and galvanic anode is connected on 60kV～150kV voltage, and negative terminal acts on the grid of electron gun.The electron beam welding line feedback signal I that first current sensor collects
fOutput to the first pulsed bias control circuit; The first pulsed bias control circuit is determined peak pulse line, the effective δ/f of base value pulsed beam current, (1-δ)/f time respectively according to duty cycle, delta again according to the cycle 1/f that line frequency value f given in advance determines pulsed beam current.During the effective δ/f of peak pulse line, the first pulsed bias control circuit is according to the electronic beam current feedback signal I that receives
fWith the given signal I of peak value line
PgCarry out difference relatively after, the result is changed into bias voltage signal, the pwm pulse of closed-loop control output also outputs to a PWM drive circuit, describedly acts on power transistor Q through the pwm pulse adjusted respectively after through a PWM drive circuit
1Grid G and power transistor Q
2Grid G on, regulate power transistor Q
1, power transistor Q
2The ON/OFF time, regulate the output of peak value bias voltage; During effective (1-the δ)/f of base value pulsed beam current, the first pulsed bias control circuit is according to the electronic beam current feedback signal I that receives
fWith the given signal I of base value line
BgCarry out difference relatively after, the result is changed into bias voltage signal, the pwm pulse of closed-loop control output also outputs to a PWM drive circuit, describedly acts on power transistor Q through the pwm pulse adjusted respectively after through a PWM drive circuit
1Grid G and power transistor Q
2Grid G on, regulate power transistor Q
1, power transistor Q
2The ON/OFF time, regulate the output of base value bias voltage.
Connection between each terminal is: the U end of 220V industrial-frequency alternating current, V end are connected on 1 end, 2 ends of decompression rectifier filter circuit MD respectively; First capacitor C
1With second capacitor C
2Between 3 ends that are connected in parallel on decompression rectifier filter circuit MD after the series connection of 0 end, 4 ends; First capacitor C
1With second capacitor C
2Between 0 end connect the first transformer B
1B end; 3 ends of decompression rectifier filter circuit MD connect the first power transistor Q
1Colelctor electrode C, 4 ends of decompression rectifier filter circuit MD connect the second power transistor Q
2Emitter E; The first transformer B
1A end connect the first power transistor Q
1The emitter E and the second power transistor Q
2Colelctor electrode C between; The first transformer B
1C end, D end, E end connect 5 ends, 6 ends, 7 ends of voltage doubling rectifing circuit respectively, 8 ends of voltage doubling rectifing circuit (grid bias power supply negative output terminal) connect the grid of electron gun, 9 ends of voltage doubling rectifing circuit (grid bias power supply positive output end) are through D.C. resistance R
1Be connected to 10 ends (promptly/high-voltage DC power supply negative output terminal) of 60kV～150kV dc source; First current sensor of having connected between 11 ends of 60kV～150kV dc source (promptly/high-voltage DC power supply positive output end) and the earth.
Summary of the invention
The present invention in order to solve the difficult problem that conventional pulsed bias power supply control technology is difficult to satisfy superaudio pulsed beam current output demand, provides a kind of grid bias power supply device that is applicable to the welding of superaudio pulsed electron beam just.This superaudio pulsed bias power supply is made up of decompression rectifier filter circuit, peak value bias generating circuit, base value bias generating circuit, peak pulse bias voltage commutation circuit, base value pulsed bias commutation circuit; Export to described peak value bias generating circuit, described base value bias generating circuit respectively behind the 220V industrial-frequency alternating current process decompression rectifier filter circuit MD; Described peak value bias generating circuit is used to produce peak value bias voltage U
pDescribed base value bias generating circuit is used to produce base value bias voltage U
bDescribed peak pulse bias voltage commutation circuit is used to realize peak pulse bias voltage u
PpPulse output; Described base value pulsed bias commutation circuit is used to realize base value pulsed bias U
BpPulse output; By control peak pulse bias voltage U
PpAmplitude, base value pulsed bias U
BpAmplitude, pulsed bias frequency f and duty cycle, delta, reach control peak pulse line I
PpAmplitude, base value pulsed beam current I
BpThe purpose of amplitude, pulsed beam current frequency f and duty cycle, delta.
The particular content of technical solution of the present invention is as follows:
This kind is applicable to the grid bias power supply device of superaudio pulsed electron beam welding, and it is characterized in that: this device is made up of peak value bias generating circuit, base value bias generating circuit, peak pulse bias voltage commutation circuit and base value pulsed bias commutation circuit, wherein:
Connection between each terminal of peak value bias generating circuit is:
U end, the V end of 220V industrial-frequency alternating current connect with 1 end, 2 ends of decompression rectifier filter circuit MD respectively; First capacitor C
1With second capacitor C
2Between 3 ends that are connected in parallel on decompression rectifier filter circuit MD after the series connection of 0 end, 4 ends; First capacitor C
1With second capacitor C
2Between 0 end connect the first transformer B
1B end; 3 ends of decompression rectifier filter circuit MD connect the first power transistor Q
1Colelctor electrode C, 4 ends of decompression rectifier filter circuit MD connect the second power transistor Q
2Emitter E; The first transformer B
1A end connect the first power transistor Q
1The emitter E and the second power transistor Q
2Colelctor electrode C between; The first transformer B
1C end, D end, E end connect 5 ends, 6 ends, 7 ends of first voltage doubling rectifing circuit respectively, first voltage sensor in parallel between 9 ends (peak value grid bias power supply negative output terminal) of 8 ends of first voltage doubling rectifing circuit (peak value grid bias power supply positive output end) and first voltage doubling rectifing circuit.The first voltage feedback signal U that first voltage sensor will collect
Pf(voltage signal of peak value bias voltage) exports to the first closed loop pwm control circuit; The given signal I of peak value line
Pg, the given signal I of base value line
Bg, line feedback signal I
fOutput to first line/bias voltage conversion circuit, first line/bias voltage conversion circuit is with the given signal I of peak value line that receives
Pg, the given signal I of base value line
BgCarry out summation operation, and detect I
fOvercurrent whether is with (I
Pg+ I
Bg) be converted into the given signal U of peak value bias voltage
PgExport to the first closed loop pwm control circuit; The first closed loop pwm control circuit is according to the first bias voltage feedback signal U that receives
PfWith the given signal U of first bias voltage
PgCarry out difference relatively after, the dutycycle of closed-loop control first pwm pulse, described first pwm pulse signal acts on the first power transistor Q respectively after through first drive circuit
1The grid G and the second power transistor Q
2Grid G on;
Connection between each terminal of base value bias generating circuit is:
The 3rd capacitor C
3With the 4th capacitor C
4Between 3 ends that are connected in parallel on decompression rectifier filter circuit MD after the series connection of M end, 4 ends; The 3rd capacitor C
3With the 4th capacitor C
4Between M end connect the second transformer B
2B end; 3 ends of decompression rectifier filter circuit MD connect the 3rd power transistor Q
3Colelctor electrode C, 4 ends of decompression rectifier filter circuit MD connect the 4th power transistor Q
4Emitter E; The second transformer B
2A end connect the 3rd power transistor Q
3Emitter E and the 4th power transistor Q
4Colelctor electrode C between; The second transformer B
2C end, D end, E end connect 5 ends, 6 ends, 7 ends of second voltage doubling rectifing circuit respectively, second voltage sensor in parallel between 9 ends (base value grid bias power supply negative output terminal) of 8 ends of second voltage doubling rectifing circuit (base value grid bias power supply positive output end) and voltage doubling rectifing circuit.The second voltage feedback signal U that second voltage sensor will collect
Bf(voltage signal of base value bias voltage) exports to the second closed loop pwm control circuit; The given signal I of base value line
Bg, line feedback signal I
fBe input to second line/bias voltage conversion circuit, second line/bias voltage conversion circuit detects I
fOvercurrent whether, and with I
BgBe converted into the given signal U of base value bias voltage
BgExport to the second closed loop pwm control circuit; The second closed loop pwm control circuit is according to the second bias voltage feedback signal U that receives
BfWith the given signal U of second bias voltage
BgCarry out difference relatively after, the dutycycle of closed-loop control second pwm pulse, described second pwm pulse signal acts on the 3rd power transistor Q respectively after through second drive circuit
3Grid G and the 4th power transistor Q
4Grid G on;
Connection between each terminal of peak pulse bias voltage commutation circuit is:
8 ends of first voltage doubling rectifing circuit, the first current-limiting resistance R that connects
1After, connect the first high speed diode D
1Anode P end; Positive output end 10 ends of superaudio pulsed bias power supply connect the first high speed diode D
1The negative electrode N end and the second high speed diode D
2Negative electrode N end; The Y end that peak pulse bias voltage commutation circuit connects with base value pulsed bias commutation circuit connects the second high speed diode D respectively
2Anode P end, the 5th power transistor Q
5Colelctor electrode C end, X end; The 5th power transistor Q
5The emitter E end connect 9 ends of first voltage doubling rectifing circuit; The first beam burst frequency and dutycycle given circuit are at peak pulse line I
PpValid period δ/f generates the high level pulse that is used for the 3rd drive circuit according to pulsed beam current frequency f, the line duty cycle, delta of outside input, described pulse through the 3rd drive circuit after, act on the 5th power transistor Q
5Grid G on; The first beam burst frequency and dutycycle given circuit produce the low level pulse with described impulse phase complementation simultaneously, and this pulse acts on the 6th power transistor Q after moving circuit through 4 wheel driven
6Grid G on;
Connection between each terminal of base value pulsed bias commutation circuit is:
8 ends of second voltage doubling rectifing circuit, the second current-limiting resistance R that connects
2After, connect the 3rd high speed diode D
3Anode P end; The X end that connects with the peak value bias circuit connects the 3rd high speed diode D respectively
3Negative electrode N end, the 4th high speed diode D
4Negative electrode N end, Y end; Negative output terminal 11 ends of superaudio pulsed bias power supply connect and connect the 4th high speed diode D respectively
4Anode P end, the 6th power transistor Q
6Colelctor electrode C end; The 6th power transistor Q
6The emitter E end connect 9 ends of second voltage doubling rectifing circuit; The first beam burst frequency and dutycycle given circuit are at base value pulsed beam current I
BpValid period (1-δ)/f, according to the pulsed beam current frequency f of outside input, the high level pulse that the duty cycle, delta generation is used for the moving circuit of 4 wheel driven, described pulse acts on the 6th power transistor Q after moving circuit through 4 wheel driven
6Grid G on; The first beam burst frequency and dutycycle given circuit produce the low level pulse with described impulse phase complementation simultaneously, this pulse through the 3rd drive circuit after, act on the 5th power transistor Q
5Grid G on.
Voltage 0～the 1500V of peak value bias generating circuit output.Voltage 0～the 1500V of base value bias generating circuit output.
The output of superaudio pulsed bias is finished in peak pulse bias voltage commutation circuit, the alternation of base value pulsed bias commutation circuit, and it is by control the 5th power transistor Q
5Open, the 6th power transistor Q
6Turn-off and regulate peak value bias effect time δ/f; It is by control the 5th power transistor Q
5Shutoff, the 6th power transistor Q
6Open and regulate base value bias effect time (1-δ)/f; Peak pulse bias voltage U
PpBe superimposed upon the negative terminal of accelerating potential 60～150kV dc source, it is by the first high speed diode D
1, the first current-limiting resistance R
1, peak value bias generating circuit positive output end 8 ends, peak value bias generating circuit negative output terminal 9 ends, the 5th power transistor Q
5, the 4th high speed diode D
4Act on the grid of electron gun; Base value pulsed bias U
BpBy the second high speed diode D
2Be superimposed upon the negative terminal of accelerating potential 60～150kV dc source, it is by the second high speed diode D
2, the 3rd high speed diode D
3, the second current-limiting resistance R
2, base value bias generating circuit positive output end 8 ends, base value bias generating circuit negative output terminal 9 ends, the 6th power transistor Q
6Act on the grid of electron gun; Regulate peak value bias voltage U
PpTime effective time δ/f, and the duty cycle variation 1/f of pulsed bias, the feasible bias pulse frequency 〉=20kHz that acts on grid on the electron gun.
The advantage of grid bias power supply device of the present invention is:
(1) combination of employing peak value bias generating circuit, base value bias generating circuit, peak pulse bias voltage commutation circuit, base value pulsed bias commutation circuit helps grid bias power supply is carried out superaudio pulse control, thereby realizes the output of superaudio pulsed beam current;
(2) superaudio base value pulsed bias and peak pulse bias voltage can be controlled and regulate flexibly, but bias pulse frequency f and duty cycle, delta independent regulation, corresponding superaudio base value pulsed beam current and peak pulse line can be controlled and regulate flexibly, but also independent regulation of beam burst frequency and dutycycle.
Description of drawings
Fig. 1 is the pulsed bias power supply conventional structure and connects block diagram with electron-beam welder.
Fig. 2 is the structured flowchart of the grid bias power supply device of superaudio pulsed electron beam welding of the present invention.
Fig. 3 is the grid bias power supply device of superaudio pulsed electron beam welding of the present invention and the block diagram that connects of electron gun, accelerating power source.
Fig. 4 is Key Circuit output voltage of the present invention and electron-beam welder output current wave schematic diagram.
The specific embodiment
Below with reference to drawings and Examples technical solution of the present invention is further described:
Shown in accompanying drawing 2, the grid bias power supply device of superaudio pulsed electron beam welding of the present invention is made up of decompression rectifier filter circuit, peak value bias generating circuit, base value bias generating circuit, peak pulse bias voltage commutation circuit, base value pulsed bias commutation circuit.
Described in the present invention decompression rectifier filter circuit, described peak value bias generating circuit adopt conventional topological circuit structure as shown in Figure 1.Be that the peak value bias generating circuit is by half bridge inverter circuit, the first transformer B
1, first voltage doubling rectifing circuit, first voltage sensor, first line/bias voltage conversion circuit, the first closed-loop control pwm circuit, first drive circuit constitute, and is used to realize peak value bias voltage U
pGeneration.Connection between its each terminal is: U end, the V end of 220V industrial-frequency alternating current connect with 1 end, 2 ends of decompression rectifier filter circuit MD respectively; 24V is straight for 3 ends of decompression rectifier filter circuit MD, the output of 4 ends
; First capacitor C
1, second capacitor C
2Constitute a brachium pontis of half bridge inverter circuit; The first bright rate transistor Q
1, the second power transistor Q
2Constitute another brachium pontis of half bridge inverter circuit; Described brachium pontis all is connected in parallel between 3 ends, 4 ends of decompression rectifier filter circuit MD.First capacitor C
1With second capacitor C
2Between 0 end connect the first transformer B
1B end; 3 ends of decompression rectifier filter circuit MD connect the first power transistor Q
1Colelctor electrode C, 4 ends of decompression rectifier filter circuit MD connect the second power transistor Q
2Emitter E; The first transformer B
1A end connect the first power transistor Q
1The emitter E and the second power transistor Q
2Colelctor electrode C between; The first transformer B
1C end, D end, E end connect 5 ends, 6 ends, 7 ends of first voltage doubling rectifing circuit respectively, first voltage sensor in parallel between 9 ends (peak value grid bias power supply negative output terminal) of 8 ends of first voltage doubling rectifing circuit (peak value grid bias power supply positive output end) and first voltage doubling rectifing circuit.The first voltage feedback signal U that first voltage sensor will collect
Pf(voltage signal of peak value bias voltage) exports to the first closed loop pwm control circuit; Because the output of bias voltage amplitude and electronic beam current output anti-phase (be that bias voltage is big more, electronic beam current is more little), peak value line I
PpValid period base value pulsed bias U
BpCan not export; Only according to the given signal I of peak value line
PgThe peak value bias voltage that calculates can cause the amplitude of peak value line too small, even the possibility that is lower than the peak value line is arranged.Therefore, for guaranteeing peak pulse line I
PpValid period, its amplitude is the given signal I of peak value line
PgWith the given signal I of base value line
BgAnd, with the given signal I of peak value line
Pg, the given signal I of base value line
Bg, line feedback signal I
fOutput to first line/bias voltage conversion circuit, first line/bias voltage conversion circuit is with the given signal I of peak value line that receives
Pg, the given signal I of base value line
BgCarry out summation operation, and detect I
fOvercurrent whether is with (I
Pg+ I
Bg) be converted into the given signal U of peak value bias voltage
PgExport to the first closed loop pwm control circuit; The first closed loop pwm control circuit is according to the first bias voltage feedback signal U that receives
PfWith the given signal U of first bias voltage
PgCarry out difference relatively after, the dutycycle of closed-loop control first pwm pulse, described first pwm pulse signal acts on the first power transistor Q respectively after through first drive circuit
1The grid G and the second power transistor Q
2Grid G on.
Described in the present invention base value bias generating circuit adopts conventional topological circuit structure as shown in Figure 1.Be that the base value bias generating circuit is by half-bridge inversion circuit, the second transformer B
2, second voltage doubling rectifing circuit, second voltage sensor, second line/bias voltage conversion circuit, the second closed-loop control pwm circuit, second drive circuit constitute, and is used to realize base value bias voltage U
bGeneration.Connection between its each terminal is: the 3rd capacitor C
3, the 4th capacitor C
4Constitute a brachium pontis of half bridge inverter circuit in the series connection of M point; The 3rd power transistor Q
3Emitter E and the 4th power transistor Q
4Colelctor electrode C connect to constitute another brachium pontis of half bridge inverter circuit; Described brachium pontis all is connected in parallel between 3 ends, 4 ends of decompression rectifier filter circuit MD.The 3rd capacitor C
3With the 4th capacitor C
4Between M end connect the second transformer B
2B end; 3 ends of decompression rectifier filter circuit MD connect the 3rd power transistor Q
3Colelctor electrode C, 4 ends of decompression rectifier filter circuit MD connect the 4th power transistor Q
4Emitter E; The second transformer B
2A end connect the 3rd power transistor Q
3Emitter E and the 4th power transistor Q
4Colelctor electrode C between; The second transformer B
2C end, D end, E end connect 5 ends, 6 ends, 7 ends of second voltage doubling rectifing circuit respectively, second voltage sensor in parallel between 9 ends (base value grid bias power supply negative output terminal) of 8 ends of second voltage doubling rectifing circuit (base value grid bias power supply positive output end) and voltage doubling rectifing circuit.The second voltage feedback signal U that second voltage sensor will collect
Bf(voltage signal of base value bias voltage) exports to the second closed loop pwm control circuit; The given signal I of base value line
Bg, line feedback signal I
fBe input to second line/bias voltage conversion circuit, second line/bias voltage conversion circuit detects I
fOvercurrent whether, and with I
BgBe converted into the given signal U of base value bias voltage
BgExport to the second closed loop pwm control circuit; The second closed loop pwm control circuit is according to the second bias voltage feedback signal U that receives
BfWith the given signal U of second bias voltage
BgCarry out difference relatively after, the dutycycle of closed-loop control second pwm pulse, described second pwm pulse signal acts on the 3rd power transistor Q respectively after through second drive circuit
3Grid G and the 4th power transistor Q
4Grid G on.
Peak pulse bias voltage commutation circuit is by the first current-limiting resistance R in the present invention
1, the first high speed diode D
1, the second high speed diode D
2, the 5th power transistor Q
5Form, be used to realize peak pulse bias voltage U
PpGeneration.Connection between its each terminal is: 8 ends of first voltage doubling rectifing circuit, the first current-limiting resistance R that connects
1After, connect the first high speed diode D
1Anode P end; Positive output end 10 ends of superaudio pulsed bias power supply connect the first high speed diode D
1The negative electrode N end and the second high speed diode D
2Negative electrode N end; The Y end that peak pulse bias voltage commutation circuit connects with base value pulsed bias commutation circuit connects the second high speed diode D respectively
2Anode P end, the 5th power transistor Q
5Colelctor electrode C end, X end; The 5th power transistor Q
5The emitter E end connect 9 ends of first voltage doubling rectifing circuit; The first beam burst frequency and dutycycle given circuit are at peak pulse line I
PpValid period δ/f generates the high level pulse that is used for the 3rd drive circuit according to pulsed beam current frequency f, the line duty cycle, delta of outside input, described pulse through the 3rd drive circuit after, act on the 5th power transistor Q
5Grid G on; The first beam burst frequency and dutycycle given circuit produce the low level pulse with described impulse phase complementation simultaneously, and this pulse acts on the 6th power transistor Q after moving circuit through 4 wheel driven
6Grid G on.
Base value pulsed bias commutation circuit is by the second current-limiting resistance R in the present invention
2, the 3rd high speed diode D
3, the 4th high speed diode D
4, the 6th power transistor Q
6Form, be used to realize base value pulsed bias U
BpGeneration.Connection between its each terminal is: 8 ends of second voltage doubling rectifing circuit, the second current-limiting resistance R that connects
2After, connect the 3rd high speed diode D
3Anode P end; The X end that connects with the peak value bias circuit connects the 3rd high speed diode D respectively
3Negative electrode N end, the 4th high speed diode D
4Negative electrode N end, Y end; Negative output terminal 11 ends of superaudio pulsed bias power supply connect and connect the 4th high speed diode D respectively
4Anode P end, the 6th power transistor Q
6Colelctor electrode C end; The 6th power transistor Q
6The emitter E end connect 9 ends of second voltage doubling rectifing circuit; The first beam burst frequency and dutycycle given circuit are at base value pulsed beam current I
BpValid period (1-δ)/f, according to the pulsed beam current frequency f of outside input, the high level pulse that the duty cycle, delta generation is used for the moving circuit of 4 wheel driven, described pulse acts on the 6th power transistor Q after moving circuit through 4 wheel driven
6Grid G on; The first beam burst frequency and dutycycle given circuit produce the low level pulse with described impulse phase complementation simultaneously, this pulse through the 3rd drive circuit after, act on the 5th power transistor Q
5Grid G on.
The grid bias power supply device that superaudio pulsed electron line of the present invention is realized, adopt separate base value bias generating circuit, peak value bias generating circuit, the flexible control and the adjusting of the base value and the peak value of superaudio pulsed bias have been realized, making that the base value of superaudio pulsed beam current is relative with peak value can make flexibly, is convenient to regulate.The 6th power transistor Q
6Open-minded, the 5th power transistor Q
5Turn-off, the peak pulse bias effect is used to realize the output of peak pulse line in the grid of electron gun; The 6th power transistor Q
6Turn-off the 5th power transistor Q
5Open-minded, the base value pulsed bias acts on the grid of electron gun, is used to realize the output of base value pulsed beam current.By the cycle 1/f of control impuls bias voltage, make the frequency 〉=20kHz of beam pulse line.
The maximum 15mA of the electric current of peak value bias generating circuit output of the present invention, output voltage is 0～1500V, corresponding peak value line is output as I
MaxMA～0mA (I
MaxFor the maximum beam of electron-beam welder output, relevant) with the power of 60～150kV dc source.
The maximum 15mA of peak value bias generating circuit output current of the present invention, output voltage is 0～1500V, corresponding peak value line is output as I
MaxMA～0mA (I
MaxFor the maximum beam of electron-beam welder output, relevant) with the power of 60～150kV dc source.
The grid bias power supply device of superaudio pulsed electron beam welding of the present invention connects as shown in Figure 3 with electron beam welding power supply, electron gun.Negative output terminal 12 ends that connect 60～150kV dc source behind the positive output end 10 end series limiting resistor R0 of superaudio pulsed bias power supply; Positive output end 13 ends of 60～150kV dc source are connected and are connected the earth behind first current sensor; Negative output terminal 11 ends of superaudio pulsed bias power supply connect the anode of electron gun.During the effective δ/f of peak pulse line, the first beam burst frequency and dutycycle given circuit generate high level pulse according to given pulsed beam current frequency f, duty cycle, delta, and described pulse signal acts on the 5th power transistor Q through the 3rd drive circuit
5Grid, make the 5th power transistor Q
5Conducting; The first beam burst frequency and dutycycle given circuit generate the low level pulse of described high pulse signal complementation simultaneously, and this low level pulse signal moves circuit function in the 6th power transistor Q through 4 wheel driven
6Grid, make the 6th power transistor Q
6Turn-off; The grid of electron gun is by the 4th high speed diode D
4, the 5th power transistor Q
5Connect with negative terminal 9 ends of peak value grid bias power supply; Anode 8 ends of peak value grid bias power supply are by the first current-limiting resistance R
1, the first high speed diode D
1Output peak pulse bias voltage U
PpU
PpBy current-limiting resistance R
0Connect with negative output terminal 12 ends of 60～150kV dc source; Described peak pulse bias voltage U
PpAct on the grid of electron gun, for the earth, the voltage that the grid of electron gun obtains is-(60～150kV)-U
PpThereby, obtain peak pulse line I
PpDuring effective (1-the δ)/f of base value pulsed beam current, the first beam burst frequency and dutycycle given circuit generate the effective pulse of low level according to given pulsed beam current frequency f, duty cycle, delta, and described pulse signal acts on the 5th power transistor Q through the 3rd drive circuit
5Grid, make the 5th power transistor Q
5Turn-off; The first beam burst frequency and dutycycle given circuit are according to the high level pulse of given pulsed beam current frequency f, duty cycle, delta generation and described low level pulse complementation simultaneously, and this high level pulse signal moves circuit function in the 6th power transistor Q through 4 wheel driven
6Grid, make the 6th power transistor Q
6Conducting; The grid of electron gun is by the 6th power transistor Q
6Negative terminal 9 ends that connect the base value grid bias power supply; Anode 8 ends of base value grid bias power supply are by the second current-limiting resistance R
2, the 3rd high speed diode D
3, the second high speed diode D
2Output base value pulsed bias U
BpU
BpBy current-limiting resistance R
0Connect with negative output terminal 12 ends of 60～150kV dc source; Described base value pulsed bias U
BpAct on the grid of electron gun, for the earth, the magnitude of voltage that obtains on the electron gun grid is-(60～150kV)-U
BpThereby, obtain base value pulsed beam current I
Bp
The operation principle of the grid bias power supply device control superaudio pulsed beam current of superaudio pulsed electron beam welding of the present invention is: first line/bias voltage conversion circuit is according to the given signal I of peak value line shown in Fig. 4 (a) of input
Pg, shown in Fig. 4 (b) the given signal I of base value line
Bg, electronic beam current feedback signal I
fAfter handling, the given signal U of output peak value bias voltage
PgTo the first closed loop pwm control circuit, the first closed loop pwm control circuit is according to the given signal U of peak value bias voltage of input
Pg, first voltage sensor output peak value bias voltage feedback signal U
PfDifference carry out PID and handle, the dutycycle of closed-loop control first pwm pulse, described first pwm pulse signal acts on the first power transistor Q respectively after through first drive circuit
1The grid G and the second power transistor Q
2Grid G on, regulate the first power transistor Q
1With
Power transistor Q
2Open/turn-off time, adjusted the peak value bias voltage U of peak value bias generating circuit output accordingly
pThe given signal I of described peak value line
PgThe time, the peak value bias voltage U of peak value bias generating circuit output
pShown in Fig. 4 (c).Second line/bias voltage conversion circuit is according to the given signal I of base value line shown in Fig. 4 (b) of input
Bg, electronic beam current feedback signal I
fAfter handling, the given signal U of output base value bias voltage
BgTo the second closed loop pwm control circuit, the second closed loop pwm control circuit is according to the given signal U of base value bias voltage of input
Bg, second voltage sensor output base value bias voltage feedback signal U
BfDifference carry out PID and handle, the dutycycle of closed-loop control second pwm pulse, described second pwm pulse signal acts on the 3rd power transistor Q respectively after through second drive circuit
3Grid G and the 4th power transistor Q
4Grid G on, regulate the 3rd power transistor Q
3With the 4th power transistor Q
4Open/turn-off time, adjusted the base value bias voltage U of base value bias generating circuit output accordingly
bThe given signal I of described base value line
BgThe time, the base value bias voltage U of base value bias generating circuit output
bShown in Fig. 4 (d).
First pulse frequency and dutycycle given circuit during δ/f, generate the 5th power transistor Q in the control peak pulse bias voltage commutation circuit according to pulsed beam current cycle 1/f, the given signal δ of dutycycle shown in Fig. 4 (e) of input respectively
5The 6th power transistor Q in the high level pulse of opening, the control base value pulsed bias commutation circuit
6The low level pulse that turn-offs; The 3rd drive circuit acts on the 5th power transistor Q according to described high level pulse signal
5Grid G on, the 5th power transistor Q
5Open-minded; The moving circuit of 4 wheel driven acts on the 6th power transistor Q according to described low level pulse signal
6Grid G on, the 6th power transistor Q
6Turn-off; Peak pulse bias voltage commutation circuit is at the peak pulse bias voltage U of the N of first high speed diode end output shown in Fig. 4 (f)
Pp, described peak pulse bias voltage U
PpBy current-limiting resistance R
0Negative terminal 12 ends that connect 60～150kV dc source; The grid of electron gun is by the 4th high speed diode D
4, the 5th power transistor Q
5Connect with negative terminal 9 ends of peak value grid bias power supply; For the earth, the voltage that the grid of electron gun obtains is-(60～150kV)-U
Pp, the peak pulse line I of electron-beam welder output shown in Fig. 4 (g)
PpThe 6th power transistor Q
6During shutoff, the base value grid bias power supply is kept stable base value bias voltage U by second voltage doubling rectifing circuit
b
First pulse frequency and dutycycle given circuit during (1-δ)/f, generate the 5th power transistor Q in the control peak pulse bias voltage commutation circuit according to pulsed beam current cycle 1/f, the given signal δ of dutycycle shown in Fig. 4 (e) of input respectively
5The 6th power transistor Q in the low level pulse that turn-offs, the control base value pulsed bias commutation circuit
6The high level pulse of opening; The 3rd drive circuit acts on the 5th power transistor Q according to described low level pulse signal
5Grid G on, the 5th power transistor Q
5Turn-off; 4 wheel driven is moving
Act on the 6th power transistor Q according to described high level pulse signal
6Grid G on, the 6th power transistor Q
6Open-minded; Base value pulsed bias commutation circuit is at the base value pulsed bias U of the N of the 3rd high speed diode end output shown in Fig. 4 (f)
Bp, described base value pulsed bias U
BpBy the second high speed diode D
2, current-limiting resistance R
0Negative terminal 12 ends that connect 60～150kV dc source; The grid of electron gun is by the 6th power transistor Q
6Connect with negative terminal 9 ends of base value grid bias power supply; For the earth, the voltage that the grid of electron gun obtains is-(60～150kV)-U
Bp, the base value pulsed beam current I of electron-beam welder output shown in Fig. 4 (g)
BpThe 5th power transistor Q
5During shutoff, the peak value grid bias power supply is kept stable peak value bias voltage U by first voltage doubling rectifing circuit
p
Adopt the peak value grid bias power supply to keep stable peak value bias voltage U
p, the base value grid bias power supply is kept stable base value bias voltage U
b, make peak pulse bias voltage commutation circuit the 5th power transistor Q
sOpen or base value pulsed bias commutation circuit the 6th power transistor Q
6When opening, peak pulse bias voltage U
PpOr base value pulsed bias U
BpCan act on the grid of electron gun rapidly, thereby realize the quick transition of pulsed beam current; The pulsed beam current frequency f of relatively independent adjusting, duty cycle, delta control technology, peak pulse bias voltage U
Pp, base value pulsed bias U
BpOperating frequency f and duty cycle, delta independent regulation, the corresponding independence of pulsed beam current frequency f, duty cycle, delta that obtains is adjustable; The frequency of pulsed bias output can 〉=20kHz, the frequency 〉=20kHz of respective electronic beam pulse line.
Claims (4)
1. grid bias power supply device that is applicable to superaudio pulsed electron beam welding, it is characterized in that: this device is made up of peak value bias generating circuit, base value bias generating circuit, peak pulse bias voltage commutation circuit and base value pulsed bias commutation circuit, wherein:
Connection between each terminal of peak value bias generating circuit is:
U end, the V end of 220V industrial-frequency alternating current connect with 1 end, 2 ends of decompression rectifier filter circuit MD respectively; First capacitor C
1With second capacitor C
2Between 3 ends that are connected in parallel on decompression rectifier filter circuit MD after the series connection of O end, 4 ends; First capacitor C
1With second capacitor C
2Between O end connect the first transformer B
1B end; 3 ends of decompression rectifier filter circuit MD connect the first power transistor Q
1Colelctor electrode C, 4 ends of decompression rectifier filter circuit MD connect the second power transistor Q
2Emitter E; The first transformer B
1A end connect the first power transistor Q
1The emitter E and the second power transistor Q
2Colelctor electrode C between; The first transformer B
1C end, D end, E end connect 5 ends, 6 ends, 7 ends of first voltage doubling rectifing circuit respectively, first voltage sensor in parallel between 9 ends (peak value grid bias power supply negative output terminal) of 8 ends of first voltage doubling rectifing circuit (peak value grid bias power supply positive output end) and first voltage doubling rectifing circuit.The first voltage feedback signal U that first voltage sensor will collect
Pf(voltage signal of peak value bias voltage) exports to the first closed loop pwm control circuit; The given signal I of peak value line
Pg, the given signal I of base value line
Bg, line feedback signal I
fOutput to first line/bias voltage conversion circuit, first line/bias voltage conversion circuit is with the given signal I of peak value line that receives
Pg, the given signal I of base value line
BgCarry out summation operation, and detect I
fOvercurrent whether is with (I
Pg+ I
Bg) be converted into the given signal U of peak value bias voltage
PgExport to the first closed loop pwm control circuit; The first closed loop pwm control circuit is according to the first bias voltage feedback signal U that receives
PfWith the given signal U of first bias voltage
PgCarry out difference relatively after, the dutycycle of closed-loop control first pwm pulse, described first pwm pulse signal acts on the first power transistor Q respectively after through first drive circuit
1The grid G and the second power transistor Q
2Grid G on;
Connection between each terminal of base value bias generating circuit is:
The 3rd capacitor C
3With the 4th capacitor C
4Between 3 ends that are connected in parallel on decompression rectifier filter circuit MD after the series connection of M end, 4 ends; The 3rd capacitor C
3With the 4th capacitor C
4Between M end connect the second transformer B
2B end; 3 ends of decompression rectifier filter circuit MD connect the 3rd power transistor Q
3Colelctor electrode C, 4 ends of decompression rectifier filter circuit MD connect the 4th power transistor Q
4Emitter E; The second transformer B
2A end connect the 3rd power transistor Q
3Emitter E and the 4th power transistor Q
4Colelctor electrode C between; The second transformer B
2C end, D end, E end connect 5 ends, 6 ends, 7 ends of second voltage doubling rectifing circuit respectively, second voltage sensor in parallel between 9 ends (base value grid bias power supply negative output terminal) of 8 ends of second voltage doubling rectifing circuit (base value grid bias power supply positive output end) and voltage doubling rectifing circuit.The second voltage feedback signal U that second voltage sensor will collect
Bf(voltage signal of base value bias voltage) exports to the second closed loop pwm control circuit; The given signal I of base value line
Bg, line feedback signal I
fBe input to second line/bias voltage conversion circuit, second line/bias voltage conversion circuit detects I
fOvercurrent whether, and with I
BgBe converted into the given signal U of base value bias voltage
BgExport to the second closed loop pwm control circuit; The second closed loop pwm control circuit is according to the second bias voltage feedback signal U that receives
BfWith the given signal U of second bias voltage
BgCarry out difference relatively after, the dutycycle of closed-loop control second pwm pulse, described second pwm pulse signal acts on the 3rd power transistor Q respectively after through second drive circuit
3Grid G and the 4th power transistor Q
4Grid G on;
Connection between each terminal of peak pulse bias voltage commutation circuit is:
8 ends of first voltage doubling rectifing circuit, the first current-limiting resistance R that connects
1After, connect the first high speed diode D
1Anode P end; Positive output end 10 ends of superaudio pulsed bias power supply connect the first high speed diode D
1The negative electrode N end and the second high speed diode D
2Negative electrode N end; The Y end that peak pulse bias voltage commutation circuit connects with base value pulsed bias commutation circuit connects the second high speed diode D respectively
2Anode P end, the 5th power transistor Q
5Colelctor electrode C end, X end; The 5th power transistor Q
5The emitter E end connect 9 ends of first voltage doubling rectifing circuit; The first beam burst frequency and dutycycle given circuit are at peak pulse line I
PpValid period δ/f generates the high level pulse that is used for the 3rd drive circuit according to pulsed beam current frequency f, the line duty cycle, delta of outside input, described pulse through the 3rd drive circuit after, act on the 5th power transistor Q
5Grid G on; The first beam burst frequency and dutycycle given circuit produce the low level pulse with described impulse phase complementation simultaneously, and this pulse acts on the 6th power transistor Q after moving circuit through 4 wheel driven
6Grid G on;
Connection between each terminal of base value pulsed bias commutation circuit is:
8 ends of second voltage doubling rectifing circuit, the second current-limiting resistance R that connects
2After, connect the 3rd high speed diode D
3Anode P end; The X end that connects with the peak value bias circuit connects the 3rd high speed diode D respectively
3Negative electrode N end, the 4th high speed diode D
4Negative electrode N end, Y end; Negative output terminal 11 ends of superaudio pulsed bias power supply connect and connect the 4th high speed diode D respectively
4Anode P end, the 6th power transistor Q
6Colelctor electrode C end; The 6th power transistor Q
6The emitter E end connect 9 ends of second voltage doubling rectifing circuit; The first beam burst frequency and dutycycle given circuit are at base value pulsed beam current I
BpValid period (1-δ)/f, according to the pulsed beam current frequency f of outside input, the high level pulse that the duty cycle, delta generation is used for the moving circuit of 4 wheel driven, described pulse acts on the 6th power transistor Q after moving circuit through 4 wheel driven
6Grid G on; The first beam burst frequency and dutycycle given circuit produce the low level pulse with described impulse phase complementation simultaneously, this pulse through the 3rd drive circuit after, act on the 5th power transistor Q
5Grid G on.
2. the grid bias power supply device that superaudio pulsed electron line according to claim 1 is realized is characterized in that: the voltage 0～1500V of peak value bias generating circuit output.
3. the grid bias power supply device that superaudio pulsed electron line according to claim 1 is realized is characterized in that: the voltage 0～1500V of base value bias generating circuit output.
4. the grid bias power supply device that superaudio pulsed electron line according to claim 1 is realized, it is characterized in that: the output of superaudio pulsed bias is finished in peak pulse bias voltage commutation circuit, the alternation of base value pulsed bias commutation circuit, and it is by control the 5th power transistor Q
5Open, the 6th power transistor Q
6Turn-off and regulate peak value bias effect time δ/f; It is by control the 5th power transistor Q
5Shutoff, the 6th power transistor Q
6Open and regulate base value bias effect time (1-δ)/f; Peak pulse bias voltage U
PpBe superimposed upon the negative terminal of accelerating potential 60～150kV dc source, it is by the first high speed diode D
1, the first current-limiting resistance R
1, peak value bias generating circuit positive output end 8 ends, peak value bias generating circuit negative output terminal 9 ends, the 5th power transistor Q
5, the 4th high speed diode D
4Act on the grid of electron gun; Base value pulsed bias U
BpBy the second high speed diode D
2Be superimposed upon the negative terminal of accelerating potential 60～150kV dc source, it is by the second high speed diode D
2, the 3rd high speed diode D
3, the second current-limiting resistance R
2, base value bias generating circuit positive output end 8 ends, base value bias generating circuit negative output terminal 9 ends, the 6th power transistor Q
6Act on the grid of electron gun; Regulate peak value bias voltage U
PpTime effective time δ/f, and the duty cycle variation 1/f of pulsed bias, the feasible bias pulse frequency 〉=20kHz that acts on grid on the electron gun.
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| CN 201110141331 CN102225490B (en) | 2011-05-27 | 2011-05-27 | Bias power supply device for supersonic-frequency pulsed electron beam welding |
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|---|---|---|---|
| CN 201110141331 CN102225490B (en) | 2011-05-27 | 2011-05-27 | Bias power supply device for supersonic-frequency pulsed electron beam welding |
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| CN102225490B CN102225490B (en) | 2013-04-10 |
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| CN103084726A (en) * | 2013-02-01 | 2013-05-08 | 中国航空工业集团公司北京航空制造工程研究所 | Dynamic machining method of electron beam surface micro-model |
| CN103151950A (en) * | 2013-03-18 | 2013-06-12 | 桂林狮达机电技术工程有限公司 | Grid bias power supply of electron beam machining equipment and application structure and application operation method of grid bias power supply |
| CN103368445A (en) * | 2013-07-16 | 2013-10-23 | 杭州电子科技大学 | Direct current and impulse type metal surface processing power circuit |
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| CN105880821A (en) * | 2016-05-25 | 2016-08-24 | 北京航空航天大学 | Bias power supply device applicable to pulsed electron beam welding and pulsed electron beam welding machine |
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| CN105553287B (en) * | 2015-12-18 | 2018-03-06 | 中国航空工业集团公司北京航空制造工程研究所 | A kind of grid bias power supply device and its electronic beam current adjusting method |
| CN105880821A (en) * | 2016-05-25 | 2016-08-24 | 北京航空航天大学 | Bias power supply device applicable to pulsed electron beam welding and pulsed electron beam welding machine |
| CN105880821B (en) * | 2016-05-25 | 2018-05-04 | 北京航空航天大学 | Suitable for the grid bias power supply device and pulsed electron beam welding machine of pulsed electron beam welding |
| CN110417264A (en) * | 2018-04-28 | 2019-11-05 | 中国科学院沈阳自动化研究所 | The bias supply device and method of automatic adjusument 4 quadrant detector pulse signal |
| CN109158731A (en) * | 2018-10-18 | 2019-01-08 | 北京石油化工学院 | Superaudio DC pulse welding supply suitable for Underwater Welding |
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