CN102886598B - Bias power device applied to high-frequency pulsed electron beam welding - Google Patents
Bias power device applied to high-frequency pulsed electron beam welding Download PDFInfo
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- CN102886598B CN102886598B CN201210345485.9A CN201210345485A CN102886598B CN 102886598 B CN102886598 B CN 102886598B CN 201210345485 A CN201210345485 A CN 201210345485A CN 102886598 B CN102886598 B CN 102886598B
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Abstract
The invention discloses a bias power device applied to high-frequency pulsed electron beam welding. The device comprises a base value bias generation module, a high-frequency pulsed bias generation module, a pulse width modulation module and a driving circuit module. The base value bias generation module and the high-frequency pulsed bias generation module are formed by connecting two independent circuits in series, so that high-frequency pulsed beam current welding can be realized, the conventional continuous beam current welding also can be realized, and in addition, the adjustment of a high-frequency pulsed bias base value and high-frequency pulsed bias amplitude and accurate control over a high-frequency pulse waveform are facilitated; and moreover, the high-frequency pulsed bias generation module finally realizes post high-voltage high-frequency pulsed bias output in a manner of controlling a preceding-stage low-voltage circuit, and such a manner is more convenient, safer and more reliable than a manner of adjusting and generating high-frequency pulses at a high-voltage end.
Description
Technical field
The present invention relates to a kind of power supply that is applicable to electron beam welding, or rather, refer to a kind of grid bias power supply device that is applicable to the welding of high-frequency impulse electronics bundle.
Background technology
Pulsed electron beam welding is the same with the welding of conventional beam deflection continuously, the electronics of filament emission accelerates to 0.3～0.7 times of bombardment welded part of the light velocity under the high pressure acceleration fields of accelerating potential 20kV～200kV, the kinetic energy of electronics will become heat energy at once, make the fusing of welding work pieces seam, subsequently cooling makes to melt metal and forms successively desired weld seam, difference is that the welding of continuous beam deflection refers to that electronic beam current welds with continuous line form, and pulsed electron beam welding is electronic beam current to be modulated into the pulse square wave line that the cycle changes weld.
Pulsed electron beam welds except possessing the features such as continuous beam deflection weld heating power density is large, welding seam deep width ratio is large, speed of welding is fast, weldable material is many, also possesses following characteristics: the in the situation that of same equal average power input, compare conventional DC electronic bundle welding, " keyhole " effect in welding process can be at utmost brought into play in pulsed electron beam welding, it is large 30%～50% that penetration depth is wanted, depth-to-width ratio also large 30%～50%.Pulsed electron beam welding can be played and falls low_input_power and prevent that welded piece is overheated carrying out the thin-wall part of electron beam welding, reduces the effect of welding deformation.Therefore pulsed electron beam welding has continuous beam deflection and welds incomparable advantage.
In the technological parameter of pulsed electron beam welding, pulse frequency Welded Joints quality has important impact, such as the raising along with pulse frequency, pulsed electron beam welding butt welded seam fusion penetration and molten wide, joint microstructure makes a significant impact, especially when pulse frequency exceedes 20kHz, the shock loading of propagating due to thermo shock wave, propagate and reflection at material internal, there is fragmentation, can smash thick column crystal, refinement weld grain, these crystal grain through refinement become the core that grain nucleation is grown up again, by grain refinement, that can improve welding point draws high intensity and toughness.Therefore high-frequency impulse has the feature that low-frequency pulse does not have, and can increase substantially electron beam welding quality.
The control mode of pulsed beam current is affected by electron gun structure, electron gun generally adopts triode gun form at present, the control of which pulsed beam current is mainly by regulating grid bias power supply voltage pulse output to realize, therefore want to realize the welding of high-frequency impulse beam deflection, grid bias power supply (hereinafter referred to as high-frequency impulse grid bias power supply) output voltage must be modulated into high-frequency pulse voltage output.Because high-frequency impulse grid bias power supply is to be serially connected in high voltage source, more than its floating ground voltage is even up to a hundred kilovolt up to tens kilovolts, because pulse frequency is high especially, reach several ten thousand hertz simultaneously, therefore realize the welding of high-frequency impulse electronics bundle and accurately control very difficult to high-frequency impulse line waveform.
The low-frequency pulse grid bias power supply that exists is at present more difficult realizes high-frequency impulse output, is mainly owing to existing the energy storage such as electric capacity and inductance components and parts to make in the time that pulse frequency is higher wave distortion serious in circuit, having had a strong impact on the quality of pulsed electron line.And high-frequency impulse grid bias power supply (the belonging to Switching Power Supply) main circuit topology being applied at present outside electron beam welding field has two kinds of topological structures at present: chopped mode and inversion add chopped mode.It is simpler that chopped mode topological structure has structure, the advantage that cost is low, but because high-frequency impulse grid bias power supply must have high pressure isolation, therefore this topological structure is not suitable for electron beam welding high-frequency impulse grid bias power supply.Inversion adds chopped mode topological structure and is mainly added in high-pressure side, high voltage isolating transformer time limit chopping depressuring circuit by adjusting and realizes pulsed bias, this pulsed bias generating mode is not subject to the impact of the components and parts value sizes such as prime electric capacity and inductance, the pulsed bias waveform producing is accurate, undistorted, if but be applied in electron beam welding power supply, because it must be connected in tens kilovolts of even up to a hundred kilovolts of above high voltage sourcies, the driving of the switching tube of chopping depressuring circuit needs tens kilovolts of even high pressure isolation of up to a hundred kilovolts, practical operation is got up more difficult, if and power supply electric discharge is very easy to destroy high drive, when maintenance, need to take pressure-oil tank apart, therefore very inconvenient shortcoming when less stable and maintenance when which realizes high-frequency impulse electronics bundle welding and has work.
Summary of the invention
For the feature that addresses the aforementioned drawbacks and weld for high-frequency impulse electronics bundle, the invention provides a kind of novel grid bias power supply device that is applicable to the welding of high-frequency impulse electronics bundle, by regulating high voltage isolating transformer prime low-voltage circuit mode to generate high-frequency impulse bias voltage, which is simple in structure, and stability is high and easy to maintenance.By controlling, prime low-voltage circuit is realized bias pulse frequency 10kHz～100kHz, amplitude 0～2000V and dutycycle 0～100% regulates continuously, and correspondence realizes pulsed beam current frequency 10kHz～100kHz, amplitude 0～200mA and dutycycle 0～100% regulates continuously.
The present invention is a kind of grid bias power supply device that is applicable to the welding of high-frequency impulse electronics bundle, and this grid bias power supply device comprises base value bias voltage generation module, high-frequency impulse bias voltage generation module, PWM(pulse width modulation) module and drive circuit module;
Described base value bias voltage generation module includes the first D.C. regulated power supply (101), the first half-bridge inversion circuit (102), the first high-frequency step-up transformer (103), the first high-voltage rectifier (104) and the first filter circuit (105);
Described high-frequency impulse bias voltage generation module includes the second D.C. regulated power supply (201), the second half-bridge inversion circuit (202), the second high-frequency step-up transformer (203) and the second high-voltage rectifier (204);
Described pwm circuit includes the first pwm circuit (109), the second pwm circuit (208);
Described drive circuit includes the first drive circuit (108), the second drive circuit (107), the 3rd drive circuit (207), the 4th drive circuit (206);
The first D.C. regulated power supply (101) is for becoming controlled d. c. voltage signal U AC three-phase 380V voltage-regulation
101, and export to the first half-bridge inversion circuit (102);
The first half-bridge inversion circuit (102) is to the controlled d. c. voltage signal U receiving
102convert the first ac square-wave voltage U to
103export to the former limit of the first high-frequency step-up transformer (103);
The first high-frequency step-up transformer (103) is for to the first ac square-wave voltage U
103the processing of boosting, and by the first ac square-wave voltage U after boosting
104export to the first rectification circuit (104);
The first high-voltage rectifier (104) is for to the first ac square-wave voltage U
103carry out rectification processing, the first ac square wave is rectified into the first direct current square-wave voltage, and by the first direct current square-wave voltage U
104export to the first filter circuit (105);
The first filter circuit (105) is for by the first direct current square-wave voltage U
104carry out filtering processing, the d. c. voltage signal U of output 0-2000V
105;
The first current sensor (106) is for gathering the loop current If on former limit of the first high-frequency step-up transformer (103)
2, and by this loop current If
2as overcurrent protection signal function to the first pwm circuit (109);
The first pwm circuit (109) is constant voltage signal U
109convert PWM square wave P to
1and P
2be applied to respectively the input of the first drive circuit (108) and the second drive circuit (107);
The first drive circuit (108) is by PWM square wave P
1weak signal power amplification, the PWM square wave after amplification is used for driving the upper switch transistor T of the first half-bridge inversion circuit (102)
r1grid;
The second drive circuit (107) is by PWM square wave P
2weak signal power amplification, the PWM square wave after amplification is used for driving switch transistor T under the first half-bridge inversion circuit (102)
r2grid;
The second pwm circuit (208) first aspect is for generation of PWM square wave P
3with PWM square wave P
4; Second aspect is by PWM square wave P
3act on the input of the 3rd drive circuit (109); The third aspect is by PWM square wave P
4act on the input of the 4th drive circuit (108);
The second D.C. regulated power supply (201) is for becoming controlled d. c. voltage signal U AC three-phase 380V voltage-regulation
201, and export to the second half-bridge inversion circuit (202);
The second half-bridge inversion circuit (202) is to the controlled d. c. voltage signal U receiving
201convert the second ac square-wave voltage U to
202export to the former limit of the second high-frequency step-up transformer (203);
The second high-frequency step-up transformer (203) is for to the second ac square-wave voltage U
202the processing of boosting, and by the second ac square-wave voltage U after boosting
202export to the second high-voltage rectifier (204);
The second high-voltage rectifier (204) is for by the second ac square-wave voltage U
202carry out rectification processing, output 0～2000V, frequency are the direct current square wave voltage signal U that 10kHz～100kHz and dutycycle are 0～100%
205, this direct current square wave voltage signal U
205be applied on electron gun grid; Direct current square wave pulse voltage signal U
204;
The second current sensor (205) is for gathering the loop current If on former limit of the second high-frequency step-up transformer (203)
2, and by this loop current If
2as overcurrent protection signal function to the second pwm circuit (208);
The second pwm circuit (208) is constant voltage signal U
208convert PWM square wave P to
3and P
4be applied to respectively the input of the 3rd drive circuit (207) and the 4th drive circuit (206);
The 3rd drive circuit (207) is by PWM square wave P
3weak signal power amplification, the PWM square wave after amplification is used for driving the upper switch transistor T of the second bridge inverter main circuit (202)
r3grid;
The 4th drive circuit (206) is by PWM square wave P
4weak signal power amplification, the PWM square wave after amplification is used for driving switch transistor T under the second half-bridge inversion circuit (202)
r4grid.
The advantage of a kind of grid bias power supply device that is applicable to the welding of high-frequency impulse electronics bundle of the present invention is: it is in series that 1. base value bias voltage generation module and high-frequency impulse bias voltage generation module adopt two-way independent circuits, can either realize the welding of high-frequency impulse line, can realize again the welding of conventional line continuously, be conducive to the accurate control of high-frequency impulse bias voltage base value and the adjusting of high-frequency impulse bias voltage amplitude and high-frequency impulse waveform simultaneously; And high-frequency impulse bias voltage generation module is realized the final high-frequency impulse bias voltage output of rear class high pressure by controlling the mode of prime low-voltage circuit, and than regulating at high-pressure side, generation high-frequency impulse mode is convenient, safety and reliable.
2. adopt grid bias power supply device of the present invention to carry out the welding of high-frequency impulse electronics bundle, the one, under same average power, the welding of the conventional beam deflection continuously of the peak power ratio of pulsed electron beam welding is much higher, thereby can effectively increase fusion penetration, improves weldquality.The 2nd, along with the raising of pulse frequency, when particularly pulse frequency exceedes 20kHz, due to the shock loading that thermo shock wave is propagated, propagate and reflection at material internal, there is fragmentation, can smash thick column crystal, there is refinement weld grain function.
Accompanying drawing explanation
Fig. 1 is that the present invention exports high-frequency impulse bias voltage and high-frequency impulse electronics line is related to schematic diagram.
Fig. 2 is the functional block diagram of a kind of grid bias power supply device that is applicable to the welding of high-frequency impulse electronics bundle of the present invention.
Fig. 3 is high-frequency impulse bias generating circuit schematic diagram of the present invention.
Fig. 4 is high-frequency impulse frequency of the present invention and dutycycle.
Fig. 4 A is the present invention's the first pwm circuit schematic diagram.
Fig. 4 B is the present invention's the second pwm circuit schematic diagram.
Fig. 5 A is the present invention the first driving circuit principle figure.
Fig. 5 B is the present invention the second driving circuit principle figure.
Fig. 5 C is the present invention the 3rd driving circuit principle figure.
Fig. 5 D is the moving circuit theory diagrams of the present invention's 4 wheel driven.
The specific embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
The present invention is a kind of grid bias power supply device that is applicable to the welding of high-frequency impulse electronics bundle, utilize this biasing device, coordinate accelerating power source and Heating Cathode Source can produce frequency 10kHz～100kHz, amplitude 0～200mA and dutycycle 0～100% high-frequency impulse electronics line of adjusting continuously.
Be related to shown in schematic diagram 1 referring to pulsed bias and high-frequency impulse line, illustrate that high-frequency impulse line produces principle.Fig. 1 (a) is bias voltage base value voltage, is produced bias voltage base value voltage U by base value bias voltage generation module
b0size regulates between 0～2000V; Fig. 2 (b) is high frequency bias pulse voltage, is produced pulse amplitude U by high-frequency impulse bias voltage generation module
p0between 0～2000V, regulate, pulse frequency regulates between 10kHz～100kHz, and pulse duty factor regulates between 0～100%; Fig. 1 (c) is pulsed bias output voltage, is produced bias pulse base value U by base value bias voltage generation module road and high-frequency impulse bias voltage generation module co-controlling
bbetween 0～2000V, regulate bias pulse amplitude U
pbetween 0～2000V, regulate, pulse frequency regulates between 10kHz～100kHz, and pulse duty factor δ regulates between 0～100%, wherein
t represents a pulse period, t
pbe illustrated in a pulse duration in pulse period T; Fig. 1 (d) is pulsed beam current, by pulsed beam current base value I
bwith pulsed beam current amplitude I
pcomposition, wherein high-frequency impulse line base value I
bsize is by high-frequency impulse bias voltage amplitude U
pcontrol high-frequency impulse line amplitude I
pby high-frequency impulse bias voltage base value U
bsize is controlled, and high-frequency impulse line frequency and dutycycle are respectively by high-frequency impulse bias frequency and Duty ratio control.
Shown in Figure 2, grid bias power supply device of the present invention comprises high frequency base value bias voltage generation module, high-frequency impulse bias voltage generation module, PWM(pulse width modulation) module and drive circuit module.
Base value bias voltage generation module comprises the first D.C. regulated power supply 101, the first half-bridge inversion circuit 102, the first high-frequency step-up transformer 103, the first high-voltage rectifier 104 and the first filter circuit 105.
High-frequency impulse bias voltage generation module includes the second D.C. regulated power supply 201, the second half-bridge inversion circuit 202, the second high-frequency step-up transformer 203 and the second high-voltage rectifier 204.
PWM(pulse width modulation) module includes the first pwm circuit 109 and the second pwm circuit 208.
Drive circuit module includes the first drive circuit 108, the second drive circuit 107, the 3rd drive circuit 207 and the 4th drive circuit 206.
Shown in Figure 2, below by the function of its realization that is elaborated with the flow process of each circuit input/output signal.
(1) first D.C. regulated power supply 101
The first D.C. regulated power supply 101 is for becoming AC three-phase 380V voltage-regulation the adjustable d. c. voltage signal U of size
101, and export to the first half-bridge inversion circuit 102.
(2) first half-bridge inversion circuits 102
The first half-bridge inversion circuit 102 is to the operation DC voltage signal U receiving
101convert ac square-wave voltage signal to (referred to as the first ac square-wave voltage U
102) the former limit of exporting to the first high-frequency step-up transformer 103.
(3) first high-frequency step-up transformers 103
The first high-frequency step-up transformer 103 is for to the first ac square-wave voltage U
102the processing of boosting, and by the ac square-wave voltage signal after boosting (referred to as the first ac square-wave voltage U that boosts
103) export to the first high-voltage rectifier 104.
(4) first high-voltage rectifiers 104
The first high-voltage rectifier 104 is to the first ac square-wave voltage U that boosts
103carry out high-voltage rectifying processing, the DC pulse voltage signal U of output
104, and by DC pulse voltage signal U
104export to the first high-pressure filter circuit 105.
(5) first high-pressure filter circuits 105
The first high-pressure filter circuit 105 is to the DC pulse voltage signal U after high-voltage rectifying
104carry out hv filtering processing, the d. c. voltage signal U of final output
105, described d. c. voltage signal U
105bias pulse base value be designated as U
b0.
(6) first pwm circuits 109
The first pwm circuit 109 converts PWM the first square wave P to constant voltage signal
1with PWM the second square wave P
2be applied to respectively the input of the first drive circuit 108 and the second drive circuit 107.
(7) first drive circuits 108
The first drive circuit 108 is by PWM the first square wave P
1weak signal is carried out power amplification, and the PWM square wave after amplification is used for driving the grid of switching tube on the first half-bridge inversion circuit 102.
(8) second drive circuits 107
The second drive circuit 107 is by PWM the second square wave P
2weak signal is carried out power amplification, and the PWM square wave after amplification is used for driving the grid of 102 times switching tubes of the first half-bridge inversion circuit.
(9) first current sensors 106
The first current sensor 106 is for gathering the former limit loop current If of the first high-frequency step-up transformer 103
1, and by this loop current If
1as overcurrent protection signal function to the first pwm circuit 109.
In the present invention, the first D.C. regulated power supply 101, the first half-bridge inversion circuit 102, the first high-frequency step-up transformer 103, the first high-voltage rectifier 104 and the first filter circuit 105 form base value bias voltage generation module.This base value bias voltage generation module is for generation of DC voltage, and as the base value of high-frequency impulse bias voltage.
(10) second D.C. regulated power supplies 201
The second D.C. regulated power supply 201 is for becoming AC three-phase 380V voltage-regulation the adjustable d. c. voltage signal U of size
201, and export to the first half-bridge inversion circuit 202.
(11) second half-bridge inversion circuit 202
The second half-bridge inversion circuit 202 is to the operation DC voltage signal U receiving
201convert ac square-wave voltage signal to (referred to as the second ac square-wave voltage U
202) the former limit of exporting to the second high-frequency step-up transformer 203.
(12) second high-frequency step-up transformer 203
The second high-frequency step-up transformer 203 is for to the second ac square-wave voltage U
202the processing of boosting, and by the ac square-wave voltage signal after boosting (referred to as the second ac square-wave voltage U that boosts
203) export to the second high-voltage rectifier 204.
(13) second high-voltage rectifier 204
The second high-voltage rectifier 204 is to the second ac square-wave voltage U that boosts
203carry out high-voltage rectifying processing, the high frequency pulse dc voltage signal U of output
204, high-frequency impulse amplitude is that 0～2000V, frequency are that 10kHz～100kHz and dutycycle are 0～100%, this high frequency pulse dc square wave voltage signal U
204be applied on electron gun grid.
(14) second pwm circuit 208
The second pwm circuit 208 first aspects are for generation of PWM third party's ripple P
3with the cubic ripple P of PWM
4, and by PWM third party's ripple P
3act on the input of the 3rd drive circuit 207 and by the cubic ripple P of PWM
4act on the input of the 4th drive circuit 206; Second aspect is by regulating Fig. 4 B circuit, for regulating PWM third party's ripple P
3with the cubic ripple P of PWM
4frequency and dutycycle.
(15) the 3rd drive circuit 207
The 3rd drive circuit 207 is by PWM third party's ripple P
3weak signal is carried out power amplification, and the PWM square wave after amplification is used for driving the grid of switching tube on the second bridge inverter main circuit 203.
(16) the 4th drive circuit 206
The 4th drive circuit 206 is by the cubic ripple P of PWM
4weak signal is carried out power amplification, and the PWM square wave after amplification is used for driving the grid of 203 times switching tubes of the second bridge inverter main circuit.
In the present invention, the second D.C. regulated power supply 201, the second half-bridge inversion circuit 202, the second high-frequency step-up transformer 203 and the second high-voltage rectifier 204 form high-frequency impulse bias voltage generation module, and this module is for generation of high frequency pulse dc voltage.
Described d. c. voltage signal U
105bias pulse base value be designated as U
b.
Described direct current square wave voltage signal U
205bias pulse amplitude be designated as U
p.
In the present invention, by controlling respectively the first D.C. regulated power supply 101 of high frequency base value bias voltage generation module and the second D.C. regulated power supply 201 of high-frequency impulse bias voltage generation module regulates bias pulse base value U
bwith bias pulse amplitude U
p; Realize the adjustable high-frequency impulse bias voltage of amplitude, frequency and dutycycle by the half-bridge inversion circuit of controlling high-frequency impulse bias voltage generation module.
In the present invention, the producing method of high-frequency impulse bias voltage is:
Control by Fig. 2 the second pwm circuit 208 the d. c. voltage signal U that half-bridge inversion circuit 202 is exported the second D.C. regulated power supply 201
o(as Fig. 3 (a)) is transformed into the ac square wave U as shown in Fig. 3 (b)
a, its pulse frequency, dutycycle are controlled by the second pwm circuit 208, and amplitude is regulated by the second D.C. regulated power supply 201.Ac square wave becomes ac square wave U shown in Fig. 3 (c) through the second high-frequency step-up transformer 203 boosting inverters
hA, then be rectified into the high frequency pulse dc square wave U shown in Fig. 3 (d) through exporting the second high-voltage rectifier 204
pS.
The frequency of high-frequency impulse regulates by the second pwm circuit 208, as shown in Figure 4 B.The second pwm circuit adopts the special generation chip of PWM SG2525, and wherein the external timing Resistor-Capacitor Unit of 6 pin of SG2525 and 5 pin and 7 pin discharge ends, determine oscillator operating frequency, and the frequency of oscillation of SG2525 can be calculated by following formula:
Wherein: R
tfor timing resistor, unit (k Ω); R
dfor Dead Time resistance, unit (Ω).
In the present invention, SG2525 internal oscillator and adjustable Dead Time circuit as shown in Figure 4 B, the timing capacitor C of oscillator
tby outer meeting resistance R
ddischarge to transistor T.From Fig. 4 B, can find out, change R
dsize just can change C
tdischarge time, also just changed the length of Dead Time; And C
tcharging current be by R
tdefinite constant current source determines, also changes R
tvalue, can change C
tcharging current.Due in circuit control, Dead Time is generally fixed, and is also capacitor C
tand resistance R
dnumerical value fix, adjust the frequency of chip output pulse, facilitating the most feasible way is adjusting resistance R
tnumerical values recited.
Triode T is set and is operated in amplification region, adjust the size of current on 6 pin by the size of adjusting the base voltage Uf on triode T, finally adjust SG2525 output pwm pulse frequency.
Wherein 9 pin of SG2525 are PWM comparator compensating signal inputs, by adjusting 9 pin voltage swing regulation output PWM dutycycle sizes.
When the work of base value bias voltage generation module, and high frequency bias pulse generation module is not while working, base value bias voltage generation module output negative pole signal arrives electron gun grid through the diode of Fig. 2 the second high-voltage rectifier 204, now grid bias power supply device can be realized conventional Dc bias, can realize the welding of conventional beam deflection continuously.
In the time that base value bias voltage generation module and high frequency bias pulse generation module are all worked, this biasing device can be realized base value and the adjustable high-frequency impulse bias voltage of peak value, can realize the welding of high-frequency impulse electronics bundle.Base value bias voltage generation module control high frequency bias pulse base value, high frequency bias pulse generation module is controlled respectively high frequency bias pulse amplitude, high frequency bias pulse frequency and high frequency bias pulse duty factor.
In the present invention, the pwm circuit in high frequency base value bias voltage generation module and high-frequency impulse bias voltage generation module adopts PWM special chip SG2525, and bipolarity integrated operational amplifier circuit is chosen TL084 chip.
The first pwm circuit 109 as shown in Figure 4 A, is to be switching tube on base value bias voltage generation module half-bridge inversion circuit and lower switching tube generation PWM square wave, and each terminal annexation is as follows:
The 9th pin and the capacitor C of the half-bridge inversion circuit PWM generator U2 of base value bias voltage generation module
7, resistance R
9and resistance R
8be connected, capacitor C
7and resistance R
9the other end be connected with signal ground, resistance R
8the other end receive signal power source+5V; The 2nd pin and the resistance R of PWM generator U2
10be connected, the 1st pin and resistance R
11, resistance R
12and capacitor C
8be connected, resistance R
11and resistance R
10the other end link together, jointly receive signal power source+5V, resistance R
12and capacitor C
8the other end jointly receive signal ground; The 12nd pin of PWM generator U2 connects signal ground, the 3rd pin connecting resistance R
13, resistance R
13another termination signal ground; The 13rd pin and the 15th pin of PWM generator U2 link together, and jointly receive signal power source+15V and capacitor C
9, capacitor C
9another termination signal ground; The 5th pin of PWM generator U2 connects capacitor C
10, the 7th pin connecting resistance R
15after connect capacitor C
10, the 6th pin connecting resistance R
14, the 8th pin connects capacitor C
13, capacitor C
10, capacitor C
13and resistance R
14the other end link together, jointly connect signal ground; The 16th pin of PWM generator U2 connects capacitor C
11, the 4th pin connects capacitor C
12, capacitor C
12and capacitor C
11the other end jointly connect signal ground; The 11st pin of PWM generator U2 meets output signal P
1receive one end of the resistance R 1-1 of the first drive circuit, the 14th pin of PWM generator U2 meets output signal P
2receive one end of the resistance R 1-2 of the second drive circuit.
Base value bias voltage generation module the first high-frequency step-up transformer 103 primary current sensor sample signal If
1contact resistance R
3, resistance R
4and capacitor C
2, resistance R
3and capacitor C
2other end ground connection, resistance R
4the other end and capacitor C
3be connected with the 3rd pin with the 5th pin of amplifier chip U1, capacitor C
3other end ground connection, resistance R
1, resistance R
2and capacitor C
1be connected to the 2nd pin that is a bit jointly connected to amplifier chip U1, R
1another pin meet signal power source+15V, resistance R
2and capacitor C
1another pin common ground.Resistance R
5, resistance R
6and capacitor C
4be connected to the 6th pin that is a bit jointly connected to amplifier chip U1, R
5another pin meet signal power source-15V, resistance R
6and capacitor C
4another pin common ground.Amplifier chip U
1the 1st pin, the 7th pin of U1, resistance R
7and capacitor C
5be connected to the 1st pin that is a bit jointly connected to NAND gate chip U5, resistance R
7another pin meet signal power source+5V, capacitor C
5another pin ground connection, the 14th pin and the capacitor C of NAND gate chip U5
6jointly receive signal power source+5V, capacitor C
6another pin ground connection, the 9th pin of NAND gate chip U11 is received the 10th pin of PWM generator U2, as current sensor sampled signal I
f1while exceeding protection value; the 5th pin of amplifier chip U1 or the 3rd pin current potential are greater than the 6th pin or the 2nd pin current potential of amplifier chip U10; the 1st pin of amplifier chip U1 or the current potential of the 7th pin are output as low; the current potential of the 9th pin of NAND gate chip U5 is output as height; the current potential of the 10th pin of corresponding PWM generator U2 is high; therefore PWM generator U2 turn-offs the 11st pin and the output of the 14th pin, and now current protection works.
The first drive circuit 108 as shown in Figure 5A, the 2nd pin of the U7 of another termination photoelectric isolated chip of resistance R 1-1, the 3rd pin of the U7 of photoelectric isolated chip connects signal ground, the U7 of photoelectric isolated chip the 5th pin connects and drives ground GND1, the 6th pin of the U7 of photoelectric isolated chip connects the base stage of triode Q1, the 8th pin of the 7th pin of the U7 of photoelectric isolated chip and the U7 of photoelectric isolated chip links together, jointly meet driving power+5V1, driving power+5V1 is also connected with resistance R 2-1 and R3-1 simultaneously, the other end of resistance R 2-1 is connected with the base stage of triode Q1, the other end of resistance R 3-1 is connected with the 4th pin with the 2nd pin that drives chip U8 with the colelctor electrode of triode Q1, the emitter stage of triode Q1 is connected with driving ground GND1, drive the 6th pin of chip U8 to be connected with capacitor C 1-1 with driving power+15V1, the other end of capacitor C 1-1 is connected with driving ground GND1, drive the 3rd pin of chip U8 to be connected with driving ground GND1, drive the 5th pin of chip U8 to be connected with resistance R 5-1, drive the 7th pin of chip U8 to be connected with resistance R 4-1, the other end of resistance R 5-1 and resistance R 4-1 connects together, and is jointly connected with the grid of switching tube on the first half-bridge inversion circuit.
The second drive circuit 107 as shown in Figure 5 B, the 2nd pin of the U9 of another termination photoelectric isolated chip of resistance R 1-2, the 3rd pin of the U9 of photoelectric isolated chip connects signal ground, the U9 of photoelectric isolated chip the 5th pin connects and drives ground GND1, the 6th pin of the U9 of photoelectric isolated chip connects the base stage of triode Q2, the 8th pin of the 7th pin of the U9 of photoelectric isolated chip and the U9 of photoelectric isolated chip links together, jointly meet driving power+5V1, driving power+5V1 is also connected with resistance R 2-2 and R3-2 simultaneously, the other end of resistance R 2-2 is connected with the base stage of triode Q2, the other end of resistance R 3-2 is connected with the 4th pin with the 2nd pin that drives chip U10 with the colelctor electrode of triode Q2, the emitter stage of triode Q2 is connected with driving ground GND1, drive the 6th pin of chip U10 to be connected with capacitor C 1-2 with driving power+15V1, the other end of capacitor C 1-2 is connected with driving ground GND1, drive the 3rd pin of chip U10 to be connected with driving ground GND1, drive the 5th pin of chip U10 to be connected with resistance R 5-2, drive the 7th pin of chip U10 to be connected with resistance R 4-2, the other end of resistance R 5-2 and resistance R 4-2 connects together, and is jointly connected with the grid of switching tube under the first half-bridge inversion circuit.
The second pwm circuit 208 as shown in Figure 4 B, be to be switching tube on high frequency bias pulse generation module the second half-bridge inversion circuit and lower switching tube generation PWM square wave, and by regulating circuit regulating impulse frequency and dutycycle, each terminal annexation is as follows:
The 9th pin and the capacitor C of the half-bridge inversion circuit PWM generator U4 of high frequency bias pulse generation module
20with applied voltage signal U
dbe connected, capacitor C
20the other end is connected with signal ground; The 2nd pin and the resistance R of PWM generator U4
23be connected, the 1st pin and resistance R
24, resistance R
25and capacitor C
21be connected, resistance R
23and resistance R
24the other end link together, jointly receive signal power source+5V, resistance R
25and capacitor C
21the other end jointly receive signal ground; The 12nd pin of PWM generator U4 connects signal ground, the 3rd pin connecting resistance R
26, resistance R
26another termination signal ground; The 13rd pin and the 15th pin of PWM generator U4 link together, and jointly receive signal power source+15V and capacitor C
22, capacitor C
22another termination signal ground; The 5th pin of PWM generator U4 connects capacitor C
r, the 7th pin connecting resistance R
dafter connect capacitor C
r, the 6th pin connecting resistance R
a, resistance R
abe connected to the colelctor electrode of triode, simultaneously emitter stage and the capacitor C of triode
t, resistance R
tbe connected to a bit, the public signal ground of receiving, the base stage of triode is passed through resistance R
bbe connected to applied voltage signal U
f.The 16th pin of PWM generator U4 connects capacitor C
23, the 4th pin connects capacitor C
24, capacitor C
23and capacitor C
24the other end jointly connect signal ground; The 11st pin of PWM generator U4 meets output signal P
3receive one end of the resistance R 1-3 of the 3rd drive circuit, the 14th pin of PWM generator U4 meets output signal P
4receive one end of the resistance R 1-4 of the 4th drive circuit.
The second high-frequency step-up transformer 203 primary current sensor sample signal If of high frequency bias pulse generation module
2contact resistance R
18, resistance R
19and capacitor C
15, resistance R
18and capacitor C
15other end ground connection, resistance R
19the other end and capacitor C
16be connected with the 3rd pin with the 5th pin of amplifier chip U3, capacitor C
16other end ground connection, resistance R
16, resistance R
17and capacitor C
14be connected to the 2nd pin that is a bit jointly connected to amplifier chip U3, R
16another pin meet signal power source+15V, resistance R
17and capacitor C
14another pin common ground.Resistance R
5, resistance R
20and capacitor C
17be connected to the 6th pin that is a bit jointly connected to amplifier chip U3, R
20another pin meet signal power source-15V, resistance R
21and capacitor C
17another pin common ground.The 1st pin of amplifier chip U3, the 7th pin of U3, resistance R
22and capacitor C
18be connected to the 1st pin that is a bit jointly connected to NAND gate chip U6, resistance R
22another pin meet signal power source+5V, capacitor C
18another pin ground connection, the 14th pin and the capacitor C of NAND gate chip U6
19jointly receive signal power source+5V, capacitor C
19another pin ground connection, the 9th pin of NAND gate chip U6 is received the 10th pin of PWM generator U4, as current sensor sampled signal I
f2while exceeding protection value; the 5th pin of amplifier chip U3 or the 3rd pin current potential are greater than the 6th pin or the 2nd pin current potential of amplifier chip U3; the 1st pin of amplifier chip U3 or the current potential of the 7th pin are output as low; the current potential of the 9th pin of NAND gate chip U6 is output as height; the current potential of the 10th pin of corresponding PWM generator U4 is high; therefore PWM generator U4 turn-offs the 11st pin and the output of the 14th pin, and now current protection works.
The 3rd drive circuit 207 as shown in Figure 5 C, the 2nd pin of the U11 of another termination photoelectric isolated chip of resistance R 1-3, the 3rd pin of the U11 of photoelectric isolated chip connects signal ground, the U11 of photoelectric isolated chip the 5th pin connects and drives ground GND1, the 6th pin of the U11 of photoelectric isolated chip connects the base stage of triode Q3, the 8th pin of the 7th pin of the U11 of photoelectric isolated chip and the U11 of photoelectric isolated chip links together, jointly meet driving power+5V1, driving power+5V1 is also connected with resistance R 2-3 and R3-3 simultaneously, the other end of resistance R 2-3 is connected with the base stage of triode Q3, the other end of resistance R 3-3 is connected with the 4th pin with the 2nd pin that drives chip U12 with the colelctor electrode of triode Q3, the emitter stage of triode Q3 is connected with driving ground GND1, drive the 6th pin of chip U12 to be connected with capacitor C 1-3 with driving power+15V1, the other end of capacitor C 1-3 is connected with driving ground GND1, drive the 3rd pin of chip U12 to be connected with driving ground GND1, drive the 5th pin of chip U12 to be connected with resistance R 5-3, drive the 7th pin of chip U12 to be connected with resistance R 4-3, the other end of resistance R 5-3 and resistance R 4-3 connects together, and is jointly connected with the grid G of switching tube on the second slab bridge inverter circuit.
The 4th drive circuit 206 as shown in Figure 5 D, the 2nd pin of the U13 of another termination photoelectric isolated chip of resistance R 1-4, the 3rd pin of the U13 of photoelectric isolated chip connects signal ground, the U13 of photoelectric isolated chip the 5th pin connects and drives ground GND1, the 6th pin of the U13 of photoelectric isolated chip connects the base stage of triode Q4, the 8th pin of the 7th pin of the U13 of photoelectric isolated chip and the U13 of photoelectric isolated chip links together, jointly meet driving power+5V1, driving power+5V1 is also connected with resistance R 2-4 and R3-4 simultaneously, the other end of resistance R 2-4 is connected with the base stage of triode Q4, the other end of resistance R 3-4 is connected with the 4th pin with the 2nd pin that drives chip U14 with the colelctor electrode of triode Q4, the emitter stage of triode Q4 is connected with driving ground GND1, drive the 6th pin of chip U14 to be connected with capacitor C 1-4 with driving power+15V1, the other end of capacitor C 1-4 is connected with driving ground GND1, drive the 3rd pin of chip U14 to be connected with driving ground GND1, drive the 5th pin of chip U14 to be connected with resistance R 5-4, drive the 7th pin of chip U14 to be connected with resistance R 4-4, the other end of resistance R 5-1 and resistance R 4-4 connects together, and is jointly connected with the grid G of switching tube under the second half-bridge inversion circuit.
Claims (1)
1. a grid bias power supply device that is applicable to the welding of high-frequency impulse electronics bundle, is characterized in that: this grid bias power supply device comprises base value bias voltage generation module, high-frequency impulse bias voltage generation module, PWM module and drive circuit module;
Described base value bias voltage generation module includes the first D.C. regulated power supply (101), the first half-bridge inversion circuit (102), the first high-frequency step-up transformer (103), the first high-voltage rectifier (104) and the first filter circuit (105);
Described high-frequency impulse bias voltage generation module includes the second D.C. regulated power supply (201), the second half-bridge inversion circuit (202), the second high-frequency step-up transformer (203) and the second high-voltage rectifier (204);
Described PWM module includes the first pwm circuit (109), the second pwm circuit (208);
Described drive circuit module includes the first drive circuit (108), the second drive circuit (107), the 3rd drive circuit (207), the 4th drive circuit (206);
The first D.C. regulated power supply (101) is for becoming controlled d. c. voltage signal U AC three-phase 380V voltage-regulation
101, and export to the first half-bridge inversion circuit (102);
The first half-bridge inversion circuit (102) is to the controlled d. c. voltage signal U receiving
101convert the first ac square-wave voltage U to
102export to the former limit of the first high-frequency step-up transformer (103);
The first high-frequency step-up transformer (103) is for to the first ac square-wave voltage U
102boost and be processed into the first ac square-wave voltage U after boosting
103export to the first rectification circuit (104);
The first high-voltage rectifier (104) is for the first ac square-wave voltage U to after boosting
103carry out rectification and be processed into the first direct current square-wave voltage U
104, and by the first direct current square-wave voltage U
104export to the first filter circuit (105);
The first filter circuit (105) is for by the first direct current square-wave voltage U
104carry out filtering processing, the d. c. voltage signal U of output 0-2000V
105;
The first current sensor (106) is for gathering the loop current If on former limit of the first high-frequency step-up transformer (103)
1, and by this loop current If
1as overcurrent protection signal function to the first pwm circuit (109);
The first pwm circuit (109) is constant voltage signal U
109convert the input that PWM square wave P1 and P2 are applied to respectively the first drive circuit (108) and the second drive circuit (107) to;
The first drive circuit (108) is by PWM square wave P
1weak signal power amplification, the PWM square wave after amplification is used for driving the upper switch transistor T of the first half-bridge inversion circuit (102)
r1grid;
The second drive circuit (107) is by PWM square wave P
2weak signal power amplification, the PWM square wave after amplification is used for driving switch transistor T under the first half-bridge inversion circuit (102)
r2grid;
The second pwm circuit (208) first aspect is for generation of PWM square wave P
3with PWM square wave P
4; Second aspect is by PWM square wave P
3act on the input of the 3rd drive circuit (207); The third aspect is by PWM square wave P
4act on the input of the 4th drive circuit (206);
The second D.C. regulated power supply (201) is for becoming controlled d. c. voltage signal U AC three-phase 380V voltage-regulation
201, and export to the second half-bridge inversion circuit (202);
The second half-bridge inversion circuit (202) is to the controlled d. c. voltage signal U receiving
201convert the second ac square-wave voltage U to
202export to the former limit of the second high-frequency step-up transformer (203);
The second high-frequency step-up transformer (203) is for to the second ac square-wave voltage U
202boost and be processed into the second ac square-wave voltage U after boosting
203export to the second high-voltage rectifier (204);
The second high-voltage rectifier (204) is for the second ac square-wave voltage U to after boosting
203carry out rectification processing, output 0～2000V, frequency are the direct current square wave voltage signal U that 10kHz～100kHz and dutycycle are 0～100%
204, this direct current square wave voltage signal U
204be applied on electron gun grid;
The second current sensor (205) is for gathering the loop current If on former limit of the second high-frequency step-up transformer (203)
2, and by this loop current If
2as overcurrent protection signal function to the second pwm circuit (208);
The second pwm circuit (208) is constant voltage signal U
208convert the input that PWM square wave P3 and P4 are applied to respectively the 3rd drive circuit (207) and the 4th drive circuit (206) to;
The 3rd drive circuit (207) is by PWM square wave P
3weak signal power amplification, the PWM square wave after amplification is used for driving the upper switch transistor T of the second bridge inverter main circuit (202)
r3grid;
The 4th drive circuit (206) is by PWM square wave P
4weak signal power amplification, the PWM square wave after amplification is used for driving switch transistor T under the second half-bridge inversion circuit (202)
r4grid;
The second pwm circuit (208) is controlled half-bridge inversion circuit (202) by the d. c. voltage signal U of the second D.C. regulated power supply (201) output
obe transformed into ac square wave U
a, its pulse frequency, dutycycle are controlled by the second pwm circuit (208), and amplitude is regulated by the second D.C. regulated power supply (201); Ac square wave becomes ac square wave U through the second high-frequency step-up transformer (203) boosting inverter
hA, then be rectified into high frequency pulse dc square wave U through exporting the second high-voltage rectifier (204)
pS;
The frequency of high-frequency impulse regulates by the second pwm circuit (208), the second pwm circuit (208) adopts the special generation chip of PWM SG2525, wherein the external timing Resistor-Capacitor Unit of 6 pin of SG2525 and 5 pin and 7 pin discharge ends, determine oscillator operating frequency, and the frequency of oscillation of SG2525 is passed through
calculate R
tfor timing resistor, R
dfor Dead Time resistance; SG2525 internal oscillator and adjustable Dead Time, the timing capacitor C of oscillator
tby outer meeting resistance R
ddischarge to transistor T; Change R
dsize just changes C
tdischarge time, also just changed the length of Dead Time; And C
tcharging current be by R
tdefinite constant current source determines, also changes R
tvalue, change C
tcharging current; Due in circuit control, Dead Time is fixed, and is also capacitor C
tand resistance R
dnumerical value fix, adjust the frequency of chip output pulse, facilitating the most feasible way is adjusting resistance R
tnumerical values recited;
Triode T is set and is operated in amplification region, adjust the size of current on 6 pin by the size of adjusting the base voltage Uf on triode T, finally adjust SG2525 output pwm pulse frequency;
Wherein 9 pin of SG2525 are PWM comparator compensating signal inputs, by adjusting 9 pin voltage swing regulation output PWM dutycycle sizes;
The first pwm circuit (109) is to be switching tube on base value bias voltage generation module half-bridge inversion circuit and lower switching tube generation PWM square wave, and each terminal annexation is as follows:
The 9th pin and the capacitor C of the half-bridge inversion circuit PWM generator U2 of base value bias voltage generation module
7, resistance R
9and resistance R
8be connected, capacitor C
7and resistance R
9the other end be connected with signal ground, resistance R
8the other end receive signal power source+5V; The 2nd pin and the resistance R of PWM generator U2
10be connected, the 1st pin and resistance R
11, resistance R
12and capacitor C
8be connected, resistance R
11and resistance R
10the other end link together, jointly receive signal power source+5V, resistance R
12and capacitor C
8the other end jointly receive signal ground; The 12nd pin of PWM generator U2 connects signal ground, the 3rd pin connecting resistance R
13, resistance R
13another termination signal ground; The 13rd pin and the 15th pin of PWM generator U2 link together, and jointly receive signal power source+15V and capacitor C
9, capacitor C
9another termination signal ground; The 5th pin of PWM generator U2 connects capacitor C
10, the 7th pin connecting resistance R
15after connect capacitor C
10, the 6th pin connecting resistance R
14, the 8th pin connects capacitor C
13, capacitor C
10, capacitor C
13and resistance R
14the other end link together, jointly connect signal ground; The 16th pin of PWM generator U2 connects capacitor C
11, the 4th pin connects capacitor C
12, capacitor C
12and capacitor C
11the other end jointly connect signal ground; The 11st pin of PWM generator U2 meets output signal P
1receive one end of the resistance R 1-1 of the first drive circuit, the 14th pin of PWM generator U2 meets output signal P
2receive one end of the resistance R 1-2 of the second drive circuit;
Base value bias voltage generation module the first high-frequency step-up transformer (103) primary current sensor sample signal If
1contact resistance R
3, resistance R
4and capacitor C
2, resistance R
3and capacitor C
2other end ground connection, resistance R
4the other end and capacitor C
3be connected with the 3rd pin with the 5th pin of amplifier chip U1, capacitor C
3other end ground connection, resistance R
1, resistance R
2and capacitor C
1be connected to the 2nd pin that is a bit jointly connected to amplifier chip U1, R
1another pin meet signal power source+15V, resistance R
2and capacitor C
1another pin common ground; Resistance R
5, resistance R
6and capacitor C
4be connected to the 6th pin that is a bit jointly connected to amplifier chip U1, R
5another pin meet signal power source-15V, resistance R
6and capacitor C
4another pin common ground; The 1st pin of amplifier chip U1, the 7th pin of U1, resistance R
7and capacitor C
5be connected to the 1st pin that is a bit jointly connected to NAND gate chip U5, resistance R
7another pin meet signal power source+5V, capacitor C
5another pin ground connection, the 14th pin and the capacitor C of NAND gate chip U5
6jointly receive signal power source+5V, capacitor C
6another pin ground connection, the 9th pin of NAND gate chip U5 is received the 10th pin of PWM generator U2, as current sensor sampled signal I
f1while exceeding protection value, the 5th pin of amplifier chip U1 or the 3rd pin current potential are greater than the 6th pin or the 2nd pin current potential of amplifier chip U10, the 1st pin of amplifier chip U1 or the current potential of the 7th pin are output as low, the current potential of the 9th pin of NAND gate chip U5 is output as height, the current potential of the 10th pin of corresponding PWM generator U2 is high, therefore PWM generator U2 turn-offs the 11st pin and the output of the 14th pin, and now current protection works;
In the first drive circuit (108), the 2nd pin of the U7 of another termination photoelectric isolated chip of resistance R 1-1, the 3rd pin of the U7 of photoelectric isolated chip connects signal ground, the U7 of photoelectric isolated chip the 5th pin connects and drives ground GND1, the 6th pin of the U7 of photoelectric isolated chip connects the base stage of triode Q1, the 8th pin of the 7th pin of the U7 of photoelectric isolated chip and the U7 of photoelectric isolated chip links together, jointly meet driving power+5V1, driving power+5V1 is also connected with resistance R 2-1 and R3-1 simultaneously, the other end of resistance R 2-1 is connected with the base stage of triode Q1, the other end of resistance R 3-1 is connected with the 4th pin with the 2nd pin that drives chip U8 with the colelctor electrode of triode Q1, the emitter stage of triode Q1 is connected with driving ground GND1, drive the 6th pin of chip U8 to be connected with capacitor C 1-1 with driving power+15V1, the other end of capacitor C 1-1 is connected with driving ground GND1, drive the 3rd pin of chip U8 to be connected with driving ground GND1, drive the 5th pin of chip U8 to be connected with resistance R 5-1, drive the 7th pin of chip U8 to be connected with resistance R 4-1, the other end of resistance R 5-4 and resistance R 4-1 connects together, and is jointly connected with the grid of switching tube on the first half-bridge inversion circuit,
In the second drive circuit (107), the 2nd pin of the U9 of another termination photoelectric isolated chip of resistance R 1-2, the 3rd pin of the U9 of photoelectric isolated chip connects signal ground, the U9 of photoelectric isolated chip the 5th pin connects and drives ground GND1, the 6th pin of the U9 of photoelectric isolated chip connects the base stage of triode Q2, the 8th pin of the 7th pin of the U9 of photoelectric isolated chip and the U9 of photoelectric isolated chip links together, jointly meet driving power+5V1, driving power+5V1 is also connected with resistance R 2-2 and R3-2 simultaneously, the other end of resistance R 2-2 is connected with the base stage of triode Q2, the other end of resistance R 3-2 is connected with the 4th pin with the 2nd pin that drives chip U10 with the colelctor electrode of triode Q2, the emitter stage of triode Q2 is connected with driving ground GND1, drive the 6th pin of chip U10 to be connected with capacitor C 1-2 with driving power+15V1, the other end of capacitor C 1-2 is connected with driving ground GND1, drive the 3rd pin of chip U10 to be connected with driving ground GND1, drive the 5th pin of chip U10 to be connected with resistance R 5-2, drive the 7th pin of chip U10 to be connected with resistance R 4-2, the other end of resistance R 5-2 and resistance R 4-2 connects together, and is jointly connected with the grid of switching tube under the first half-bridge inversion circuit,
The second pwm circuit (208) is to be switching tube on high frequency bias pulse generation module the second half-bridge inversion circuit and lower switching tube generation PWM square wave, and by regulating circuit regulating impulse frequency and dutycycle, each terminal annexation is as follows:
The 9th pin and the capacitor C of the half-bridge inversion circuit PWM generator U4 of high frequency bias pulse generation module
20with applied voltage signal U
dbe connected, capacitor C
20the other end is connected with signal ground; The 2nd pin and the resistance R of PWM generator U4
23be connected, the 1st pin and resistance R
24, resistance R
25and capacitor C
21be connected, resistance R
23and resistance R
24the other end link together, jointly receive signal power source+5V, resistance R
25and capacitor C
21the other end jointly receive signal ground; The 12nd pin of PWM generator U4 connects signal ground, the 3rd pin connecting resistance R
26, resistance R
26another termination signal ground; The 13rd pin and the 15th pin of PWM generator U4 link together, and jointly receive signal power source+15V and capacitor C
22, capacitor C
22another termination signal ground; The 5th pin of PWM generator U4 connects capacitor C
t, the 7th pin connecting resistance R
dafter connect capacitor C
t, the 6th pin connecting resistance R
a, resistance R
abe connected to the colelctor electrode of triode, simultaneously emitter stage and the capacitor C of triode
t, resistance R
tbe connected to a bit, the public signal ground of receiving, the base stage of triode is passed through resistance R
bbe connected to applied voltage signal U
f; The 16th pin of PWM generator U4 connects capacitor C
23, the 4th pin connects capacitor C
24, capacitor C
23and capacitor C
24the other end jointly connect signal ground; The 11st pin of PWM generator U4 meets output signal P
3receive one end of the resistance R 1-3 of the 3rd drive circuit, the 14th pin of PWM generator U4 meets output signal P
4receive one end of the resistance R 1-4 of the 4th drive circuit;
The second high-frequency step-up transformer (203) primary current sensor sample signal If of high frequency bias pulse generation module
2contact resistance R
18, resistance R
19and capacitor C
15, resistance R
18and capacitor C
15other end ground connection, resistance R
19the other end and capacitor C
16be connected with the 3rd pin with the 5th pin of amplifier chip U3, capacitor C
16other end ground connection, resistance R
16, resistance R
17and capacitor C
14be connected to the 2nd pin that is a bit jointly connected to amplifier chip U3, R
16another pin meet signal power source+15V, resistance R
17and capacitor C
14another pin common ground; Resistance R
21, resistance R
20and capacitor C
17be connected to the 6th pin that is a bit jointly connected to amplifier chip U3, R
20another pin meet signal power source-15V, resistance R
21and capacitor C
17another pin common ground; The 1st pin of amplifier chip U3, the 7th pin of U3, resistance R
22and capacitor C
18be connected to the 1st pin that is a bit jointly connected to NAND gate chip U6, resistance R
22another pin meet signal power source+5V, capacitor C
18another pin ground connection, the 14th pin and the capacitor C of NAND gate chip U6
19jointly receive signal power source+5V, capacitor C
19another pin ground connection, the 9th pin of NAND gate chip U6 is received the 10th pin of PWM generator U4, as current sensor sampled signal I
f2while exceeding protection value, the 5th pin of amplifier chip U3 or the 3rd pin current potential are greater than the 6th pin or the 2nd pin current potential of amplifier chip U3, the 1st pin of amplifier chip U3 or the current potential of the 7th pin are output as low, the current potential of the 9th pin of NAND gate chip U6 is output as height, the current potential of the 10th pin of corresponding PWM generator U4 is high, therefore PWM generator U4 turn-offs the 11st pin and the output of the 14th pin, and now current protection works;
In the 3rd drive circuit (207), the 2nd pin of the U11 of another termination photoelectric isolated chip of resistance R 1-3, the 3rd pin of the U11 of photoelectric isolated chip connects signal ground, the U11 of photoelectric isolated chip the 5th pin connects and drives ground GND1, the 6th pin of the U11 of photoelectric isolated chip connects the base stage of triode Q3, the 8th pin of the 7th pin of the U11 of photoelectric isolated chip and the U11 of photoelectric isolated chip links together, jointly meet driving power+5V1, driving power+5V1 is also connected with resistance R 2-3 and R3-3 simultaneously, the other end of resistance R 2-3 is connected with the base stage of triode Q3, the other end of resistance R 3-3 is connected with the 4th pin with the 2nd pin that drives chip U12 with the colelctor electrode of triode Q3, the emitter stage of triode Q3 is connected with driving ground GND1, drive the 6th pin of chip U12 to be connected with capacitor C 1-3 with driving power+15V1, the other end of capacitor C 1-3 is connected with driving ground GND1, drive the 3rd pin of chip U12 to be connected with driving ground GND1, drive the 5th pin of chip U12 to be connected with resistance R 5-3, drive the 7th pin of chip U12 to be connected with resistance R 4-3, the other end of resistance R 5-3 and resistance R 4-3 connects together, and is jointly connected with the grid G of switching tube on the second slab bridge inverter circuit,
In the 4th drive circuit (206), the 2nd pin of the U13 of another termination photoelectric isolated chip of resistance R 1-4, the 3rd pin of the U13 of photoelectric isolated chip connects signal ground, the U13 of photoelectric isolated chip the 5th pin connects and drives ground GND1, the 6th pin of the U13 of photoelectric isolated chip connects the base stage of triode Q4, the 8th pin of the 7th pin of the U13 of photoelectric isolated chip and the U13 of photoelectric isolated chip links together, jointly meet driving power+5V1, driving power+5V1 is also connected with resistance R 2-4 and R3-4 simultaneously, the other end of resistance R 2-4 is connected with the base stage of triode Q4, the other end of resistance R 3-4 is connected with the 4th pin with the 2nd pin that drives chip U14 with the colelctor electrode of triode Q4, the emitter stage of triode Q4 is connected with driving ground GND1, drive the 6th pin of chip U14 to be connected with capacitor C 1-4 with driving power+15V1, the other end of capacitor C 1-4 is connected with driving ground GND1, drive the 3rd pin of chip U14 to be connected with driving ground GND1, drive the 5th pin of chip U14 to be connected with resistance R 5-4, drive the 7th pin of chip U14 to be connected with resistance R 4-4, the other end of resistance R 5-4 and resistance R 4-4 connects together, and is jointly connected with the grid G of switching tube under the second half-bridge inversion circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210345485.9A CN102886598B (en) | 2012-09-17 | 2012-09-17 | Bias power device applied to high-frequency pulsed electron beam welding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210345485.9A CN102886598B (en) | 2012-09-17 | 2012-09-17 | Bias power device applied to high-frequency pulsed electron beam welding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
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| CN105345248B (en) * | 2015-11-30 | 2018-01-05 | 北京卫星制造厂 | A kind of hand-held electronic beam source of welding current for space-orbit welding |
| CN105553287B (en) * | 2015-12-18 | 2018-03-06 | 中国航空工业集团公司北京航空制造工程研究所 | A kind of grid bias power supply device and its electronic beam current adjusting method |
| CN105880821B (en) * | 2016-05-25 | 2018-05-04 | 北京航空航天大学 | Suitable for the grid bias power supply device and pulsed electron beam welding machine of pulsed electron beam welding |
| CN107866631B (en) * | 2016-09-23 | 2020-05-05 | 中国航空制造技术研究院 | Grain refinement device and method based on electron beam fuse forming |
| CN113381636B (en) * | 2021-06-03 | 2022-07-22 | 北京航空航天大学 | High-frequency pulse electron beam bias power supply |
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| US4263664A (en) * | 1979-08-31 | 1981-04-21 | Xicor, Inc. | Nonvolatile static random access memory system |
| KR200215119Y1 (en) * | 1997-12-01 | 2001-03-02 | 윤종용 | Power supply with reference signal generation circuit for power saving operation mode |
| CN201231375Y (en) * | 2008-07-23 | 2009-05-06 | 桂林狮达机电技术工程有限公司 | Acceleration high-voltage supply device of electron-beam welding machine |
| CN101323048B (en) * | 2008-07-23 | 2010-08-18 | 桂林狮达机电技术工程有限公司 | Control method of electron-beam welder acceleration high-voltage power supply as well as power-supply apparatus |
| CN102357730B (en) * | 2011-09-15 | 2013-04-24 | 北京航空航天大学 | Bias power supply device suitable for pulse electronic beam welding |
| CN102510228A (en) * | 2011-11-14 | 2012-06-20 | 北方工业大学 | Digital high-frequency high-voltage power supply device of electron beam welding machine and control method thereof |
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