CN102214679B - Self-isolation high-voltage half-bridge structure formed in silicon on insulator - Google Patents
Self-isolation high-voltage half-bridge structure formed in silicon on insulator Download PDFInfo
- Publication number
- CN102214679B CN102214679B CN 201110139432 CN201110139432A CN102214679B CN 102214679 B CN102214679 B CN 102214679B CN 201110139432 CN201110139432 CN 201110139432 CN 201110139432 A CN201110139432 A CN 201110139432A CN 102214679 B CN102214679 B CN 102214679B
- Authority
- CN
- China
- Prior art keywords
- side power
- power switch
- switch tube
- bridge structure
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention provides a self-isolation high-voltage half-bridge structure formed in silicon on insulation. The self-isolation high-voltage half-bridge structure comprises a high-side power switch tube and a low-side power switch tube, wherein the output electrode of the high-side power switch tube and the input electrode of the low-side power switch tube are connected with each other and led out together to form an output port; and a P-type body region in the high-side power switch tube is contacted with a buried oxidization layer on the lower layer of the silicon on insulation, so self-isolation is formed between the high-side power switch tube and the low-side power switch tube to isolate the high-side power switch tube from the low-side power switch tube in an insulating way. In the self-isolation high-voltage half-bridge structure, the self-isolation is formed between the high-side power switch tube and the low-side power switch tube by using the P-type body region in the high-side power switch tube, so that the high-side power switch tube and the low-side power switch tube can be isolated from each other in the absence of oxide filled in a groove. The isolation area between the two power tubes is reduced, so that manufacturing processes can be simplified, the area occupied by a chip can be reduced to increase the effective using area of the power switch tube having the half-bridge structure, and production cost can be saved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, specifically, the present invention relates to a kind of self-isolation formula high voltage half-bridge structure that is formed in the silicon-on-insulator.
Background technology
High voltage half-bridge or full-bridge are one type of important Switching Power Supply topologys during high-tension circuit is used; Its structure is made up of one or more power switch pipe; Each road power switch pipe is made up of high side and two power switch pipes of downside again; Usually output one or more have the ac square wave of Dead Time, be mainly used in ballast and the industrial motor driven of lighting field etc.This module overwhelming majority adopts the discrete power device to constitute at present, will control the present domestic public reported that also do not have of the high pressure chip that driving and half-bridge all integrate.Abroad on the market; Companies such as grace intelligence Pu (NXP) and Mitsubishi have similar products; Especially NXP company has realized that the 600V high pressure is integrated on thin SOI; The source leakage conductance energising resistance (Rdson) of high side IGBT of its half-bridge and downside LDMOS power switch pipe is present state-of-the-art power integrated technology far below body silicon lateral direction power pipe.
Because (Silicon On Insulation, SOI) silicon chip is easy to realize different voltage isolation to silicon-on-insulator, is the advanced integrated good solution of high voltage integrated circuit (HVIC) technology.Especially on the thin SOI of top layer silicon; Can be through optimizing drift region linear doping and field plate techniques; Obtain the very excellent Rdson of high-breakdown-voltage and result; This makes half-bridge module to be integrated on the same chip with less area and control circuit, greatly reduces cost, and has good reliability.
Fig. 1 is the electrical block diagram of a kind of high voltage half-bridge structure in the prior art.As shown in the figure, this half-bridge structure 100 is made up of two power switch pipes 101,102 of high side and downside, and high side power pipe 101 adopts LIGBT (Lateral IGBT, transversal I GBT) to have more advantage because conducting resistance (Ron) reduces effect usually; And downside power tube 102 adopts LDMOS (Lateral DMOS, lateral direction bilateral diffusion MOS) usually.The drain electrode of the emitter of the LIGBT of high side and the LDMOS of downside is connected together and draws the formation output port, is in same current potential.
But in manufacturing process, two power switch pipes of the high side of high voltage half-bridge structure and downside need be kept apart.As shown in Figure 2, it is the cross-sectional view of a kind of high voltage half-bridge structure in the prior art.As shown in the figure, high voltage half-bridge structure 200 is formed in the N molded lines property drift region on the supporting wafer, is separated with between between supporting wafer and the N molded lines property drift region and buries oxide layer.This high voltage half-bridge structure 200 can comprise high side device of half-bridge (for example LIGBT) 201 and half-bridge downside device (for example LDMOS) 202; Wherein the high side device 201 of half-bridge can comprise collector electrode, polysilicon gate, thick grid oxygen, P type tagma and butt joint emitter, and half-bridge downside device 202 can comprise drain electrode, polysilicon gate, thick grid oxygen, P type tagma and source electrode.Can see that in existing high voltage half-bridge structure 200, high side power switching tube 201 is isolated with trench fill oxide 203 with low side power switch pipe 202.To this, the chip manufacturing process relative complex of this high voltage half-bridge structure 200 of the prior art, step is more, and also bigger to taking of chip area.
Summary of the invention
Technical problem to be solved by this invention provides a kind of self-isolation formula high voltage half-bridge structure that is formed in the silicon-on-insulator, can simplified manufacturing technique, reduce chip area footprints, save production cost.
For solving the problems of the technologies described above; The present invention provides a kind of self-isolation formula high voltage half-bridge structure that is formed in the silicon-on-insulator; Comprise high side and low side power switch pipe, the output stage of said high side power switching tube is connected with the input utmost point of said low side power switch pipe and draws the formation output port;
Wherein, the P type tagma in the said high side power switching tube contacts with the oxide layer of burying of silicon-on-insulator lower floor, between said high side and low side power switch pipe, forms self-isolation, and both insulation gaps are opened.
Alternatively, the thickness of the top layer silicon of said silicon-on-insulator≤5 μ m.
Alternatively, said high side power switching tube be landscape insulation bar double-pole-type transistor (Lateral Insulated Gate Bipolar Transistor, LIGBT).
Alternatively, said low side power switch pipe be the lateral double diffusion metal oxide semiconductor field-effect transistor (Lateral Double-diffused MOSFET, LDMOS).
Alternatively, the emitter of said high side power switching tube is connected with the drain electrode of said low side power switch pipe and draws the formation output port.
Compared with prior art, the present invention has the following advantages:
The present invention utilizes the P type tagma in the high side power switching tube to make both form self-isolation between the high side of high voltage half-bridge structure and low side power switch pipe, and need not to isolate with trench fill oxide again.Owing to saved the isolation area between two power tubes, therefore can simplified manufacturing technique, reduce chip area footprints and promote effective usable floor area of the power switch pipe of half-bridge structure, save production cost.
Description of drawings
Above-mentioned and other characteristic, character and advantage of the present invention will become more obvious through the description below in conjunction with accompanying drawing and embodiment, wherein:
Fig. 1 is the electrical block diagram of a kind of high voltage half-bridge structure in the prior art;
Fig. 2 is the cross-sectional view of a kind of high voltage half-bridge structure in the prior art;
Fig. 3 is the cross-sectional view that is formed at the self-isolation formula high voltage half-bridge structure in the silicon-on-insulator of one embodiment of the invention.
Embodiment
Below in conjunction with specific embodiment and accompanying drawing the present invention is described further, but should limit protection scope of the present invention with this.
Fig. 3 is the cross-sectional view that is formed at the self-isolation formula high voltage half-bridge structure in the silicon-on-insulator of one embodiment of the invention.In the present embodiment, be used to make the thickness≤5 μ m of top layer silicon of the silicon-on-insulator (SOI) of device.
As shown in Figure 3, this self-isolation formula high voltage half-bridge structure 300 is formed in the N molded lines property drift region 307,308 on the supporting wafer, supporting wafer and N molded lines property drift region 307, is separated with between between 308 and buries oxide layer 306.This high voltage half-bridge structure 300 can comprise high side power switching tube 301 and low side power switch pipe 302; Wherein high side power switching tube 301 can comprise collector electrode, polysilicon gate, thick grid oxygen, P type tagma and butt joint emitter, and low side power switch pipe 302 can comprise drain electrode, polysilicon gate, thick grid oxygen, P type tagma and source electrode.In the present embodiment; This high side power switching tube 301 can be landscape insulation bar double-pole-type transistor (Lateral Insulated Gate Bipolar Transistor; LIGBT); This low side power switch pipe 302 then can for the lateral double diffusion metal oxide semiconductor field-effect transistor (Lateral Double-diffused MOSFET, LDMOS).The output stage of high side power switching tube 301 is connected with the input utmost point of low side power switch pipe 302.In the present embodiment, specifically, the emitter 303 of high side power switching tube 301 is connected with the drain electrode 304 of low side power switch pipe 302, and emitter 303 is drawn the formation output port together with drain electrode 304 then.
Wherein, the P type tagma 305 in the high side power switching tube 301 contacts with the oxide layer 306 of burying of silicon-on-insulator (SOI) lower floor.Because the oxide layer 306 of burying of SOI lower floor is the good insulation performance body, so the P type tagma 305 in the high side power switching tube 301 is just in time spaced apart with N molded lines property drift region 308 in N molded lines property drift region in the high side power switching tube 301 307 and the low side power switch pipe 302.So; At high side and low side power switch pipe 301, just form a kind of self-isolation between 302, so need not as use in the prior art trench fill oxide 203 or other more spacers just can with high side and low side power switch pipe 301,302 between the two insulation gap open.
The present invention utilizes the P type tagma in the high side power switching tube to make both form self-isolation between the high side of high voltage half-bridge structure and low side power switch pipe, and need not to isolate with trench fill oxide again.Owing to saved the isolation area between two power tubes, therefore can simplified manufacturing technique, reduce chip area footprints and promote effective usable floor area of the power switch pipe of half-bridge structure, save production cost.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (5)
1. a self-isolation formula high voltage half-bridge structure that is formed in the silicon-on-insulator comprises high side and low side power switch pipe, and the output stage of said high side power switching tube is connected with the input utmost point of said low side power switch pipe and draws the formation output port;
Wherein, Bury oxide layer with this burying of said silicon-on-insulator lower floor on the oxide layer and be formed with N molded lines property drift region contiguously; P type tagma in the said high side power switching tube contacts with the said oxide layer of burying of said silicon-on-insulator lower floor; And the said P type tagma in the said high side power switching tube is just in time spaced apart with N molded lines property drift region in the said high side power switching tube and the N molded lines property drift region in the said low side power switch pipe; Thereby between said high side and low side power switch pipe, form self-isolation, both insulation gaps are opened.
2. high voltage half-bridge structure according to claim 1 is characterized in that, the thickness of the top layer silicon of said silicon-on-insulator≤5 μ m.
3. high voltage half-bridge structure according to claim 1 is characterized in that, said high side power switching tube is a landscape insulation bar double-pole-type transistor.
4. high voltage half-bridge structure according to claim 3 is characterized in that, said low side power switch pipe is the lateral double diffusion metal oxide semiconductor field-effect transistor.
5. high voltage half-bridge structure according to claim 4 is characterized in that the output of said high side power switching tube is its emitter very, and the input of said low side power switch pipe is its drain electrode very.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110139432 CN102214679B (en) | 2011-05-26 | 2011-05-26 | Self-isolation high-voltage half-bridge structure formed in silicon on insulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110139432 CN102214679B (en) | 2011-05-26 | 2011-05-26 | Self-isolation high-voltage half-bridge structure formed in silicon on insulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102214679A CN102214679A (en) | 2011-10-12 |
| CN102214679B true CN102214679B (en) | 2012-12-05 |
Family
ID=44745909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110139432 Active CN102214679B (en) | 2011-05-26 | 2011-05-26 | Self-isolation high-voltage half-bridge structure formed in silicon on insulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102214679B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI641132B (en) * | 2017-08-29 | 2018-11-11 | 新唐科技股份有限公司 | Semiconductor devices and methods for manufacturing the same |
| CN109742090B (en) * | 2019-01-10 | 2020-09-01 | 重庆邮电大学 | Composite RC-LIGBT device integrating LDMOS and LIGBT |
| CN116130477B (en) * | 2023-02-28 | 2023-10-27 | 海信家电集团股份有限公司 | Intelligent power module and electronic equipment with same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994738A (en) * | 1997-12-16 | 1999-11-30 | Advanced Micro Devices | Silicon oxide insulator (SOI) semiconductor having selectively linked body |
| CN101515586A (en) * | 2008-02-21 | 2009-08-26 | 中国科学院微电子研究所 | Radio frequency SOI LDMOS device with close body contact |
| CN102024825A (en) * | 2010-09-21 | 2011-04-20 | 电子科技大学 | Integrated power device on silicon on insulator (SOI) layer for negative supply voltage |
-
2011
- 2011-05-26 CN CN 201110139432 patent/CN102214679B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994738A (en) * | 1997-12-16 | 1999-11-30 | Advanced Micro Devices | Silicon oxide insulator (SOI) semiconductor having selectively linked body |
| CN101515586A (en) * | 2008-02-21 | 2009-08-26 | 中国科学院微电子研究所 | Radio frequency SOI LDMOS device with close body contact |
| CN102024825A (en) * | 2010-09-21 | 2011-04-20 | 电子科技大学 | Integrated power device on silicon on insulator (SOI) layer for negative supply voltage |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102214679A (en) | 2011-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104051534B (en) | vertical DMOS transistor | |
| CN101969074B (en) | High voltage lateral double diffused MOSFET element | |
| CN110556388B (en) | Integrated power semiconductor device and manufacturing method thereof | |
| CN103311304B (en) | Semiconductor device | |
| CN102231390B (en) | Vertical double-diffused metal oxide semiconductor power device with super junction structure | |
| US20210336052A1 (en) | Power mos device with low gate charge and a method for manufacturing the same | |
| CN102738232B (en) | Super junction power transistor structure and manufacturing method thereof | |
| US20130056824A1 (en) | Semiconductor device and manufacturing method for the same | |
| CN109065609A (en) | A kind of low on-resistance silicon-on-insulator lateral insulated gate bipolar transistor | |
| CN108091685A (en) | It is a kind of to improve half pressure-resistant super node MOSFET structure and preparation method thereof | |
| CN102214679B (en) | Self-isolation high-voltage half-bridge structure formed in silicon on insulator | |
| CN107170801B (en) | A kind of shield grid VDMOS device improving avalanche capability | |
| TWI447912B (en) | Semiconductor device and manufacturing method for the same | |
| CN102157550B (en) | SOI (silicon on insulator) LIGBT (lateral insulated gate bipolar transistor) device unit with p buried layer and longitudinal channel | |
| CN102738229B (en) | Structure of power transistor and method for manufacturing power transistor | |
| CN107978632B (en) | Multi-channel transverse high-voltage device | |
| CN112186028A (en) | Shielding grid MOSFET device integrated with NPN punch-through triode | |
| CN110190114B (en) | Grid-controlled bipolar-field effect composite silicon carbide vertical double-diffusion metal oxide semiconductor transistor | |
| CN102169893B (en) | Horizontal channel SOI LIGBT device unit with P buried layer | |
| CN207217534U (en) | Transistor device with integrated diode | |
| CN107482049B (en) | Super-junction VDMOS device | |
| CN202058737U (en) | Transverse groove silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT) device unit with p-type buried layer | |
| CN108183102B (en) | Reverse-resistance power MOSFET device | |
| CN202018966U (en) | Vertical channel SOI LIGBT device unit with p buried layer | |
| CN101872771A (en) | Reverse-conducting SOI LIGBT component unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee after: SHANGHAI ADVANCED SEMICONDUCTO Address before: 200233, Shanghai, Xuhui District, Shanghai Rainbow Road No. 385 Patentee before: ADVANCED SEMICONDUCTOR MANUFACTURING Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210422 Address after: 200120 No.600 Yunshui Road, Pudong New Area, Shanghai Patentee after: Shanghai Jita Semiconductor Co.,Ltd. Address before: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee before: SHANGHAI ADVANCED SEMICONDUCTO |