CN102201648A - Band-edge surface-emitting laser for FP (Fabry-Perot) cavity enhanced electrolysis photonic crystal - Google Patents
Band-edge surface-emitting laser for FP (Fabry-Perot) cavity enhanced electrolysis photonic crystal Download PDFInfo
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Abstract
The invention discloses a band-edge surface-emitting laser for an FP (Fabry-Perot) cavity enhanced electrolysis photonic crystal. The laser has a photonic crystal structure with a deep etch hole, wherein the photonic crystal structure has the band-edge surface-emitting property and is positioned on an FP ridge-shaped strip; the width of the FP ridge-shaped strip is large; the length of an FP cavity is large; an electrode P is completely positioned on the ridge-shaped strip; and the structure of the FP cavity can be expanded according to the symmetrical characteristic of the photonic crystal. By adopting the invention, a low-cost band-edge surface-emitting laser for the electrolysis photonic crystal can be realized; moreover, the structure can be applied to a reader for integrating characteristic signals in a light path; and by extending the structure of the FP cavity, multi-channel coupling enhancement can be realized.
Description
Technical field
The present invention relates to the semiconductor photoelectronic device technical field, relate in particular to a kind of Fabry-Perot and fall that (Fabry-Perot, FP) cavity-enhanced electricity injects photonic crystal band edge surface-emitting laser.
Background technology
The appearance of photonic crystal notion is apart from existing two more than ten years of the present, and the theory of photonic crystal and device have all obtained the development of advancing by leaps and bounds therebetween, and the various known characteristics of photonic crystal have all been excavated the photon crystal device that comes out to be used for difference in functionality at present.One class photonic crystal band edge surface-emitting laser is arranged owing to it has wide application prospect to enjoy people to pay close attention in fields such as scientific research, medicine equipment, optical communication, optical storages.
As shown in Figure 1, Fig. 1 is the structural representation of photonic crystal band edge surface-emitting laser in the prior art.Photonic crystal band edge surface-emitting laser utilizes the characteristic distributions of the monopolar mode field of the photonic crystal Γ symmetric points second preface band edge, can form the large tracts of land standing wave resonance in photonic crystal region 2, exporting perpendicular to the relevant coupling of the direction (being the periodic normal direction of photonic crystal) of active layer 8, the angle of divergence of output beam is very little, and external best level is accomplished 0.1 °.
Making photonic crystal band edge surface-emitting laser need utilize electron beam exposure technology to make large-area photonic crystal region 2 so that enough feedbacks to be provided, this makes cost of manufacture very high, if but reduced photonic crystal region 2 areas, mode of resonance will could not swash device to penetrate because of can not get enough feedbacks.
Just address this problem and must utilize cheap mode to provide enough gains to mode of resonance under little photonic crystal region 2 area situations, this demand can be satisfied just in traditional FP chamber.The structural representation of traditional ridged stripe shape FP laser as shown in Figure 2, wherein 3 is the ridged bar.The manufacture craft of ridged stripe shape FP laser is ripe and cheap, can realize easily that electricity injects continuous sharp the penetrating of room temperature.The FP chamber is combined with photonic crystal, and the electricity that has solved photon crystal laser again simultaneously injects this design challenges.Photonic crystal also can be modulated the FP chamber, suppresses the many side forms of many longitudinal modes in the FP chamber, and photonic crystal band edge pattern then can be by the enhancing of selectivity.
Make the cavity-enhanced electricity injection of FP photonic crystal band edge surface-emitting laser and need use induction coupling and plasma dry deep etching technology, requirement is carried out from the surface to the deep erosion of hundred nano-scale figures of break-through active layer 8 the active wafer with quantum well structure, and etching depth requires to reach more than 2 microns.At present, this deep etching technology can realize on passive wafer, but will realize deep erosion on active wafer, is still a great challenge.But we obtain major technological breakthrough by a large amount of experiments in this technology, and the etching depth that reaches has satisfied the requirement of making laser among the present invention.
Can determine thus, the FP chamber is combined with photonic crystal, make the cavity-enhanced electricity of FP and inject photonic crystal band edge surface-emitting laser, be very valuable and practicable design.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide the cavity-enhanced electricity of a kind of FP to inject photonic crystal band edge surface-emitting laser, and to solve under less photonic crystal region area situation, the electricity of laser injects room temperature and swashs the problem of penetrating continuously, reduces cost of manufacture.
(2) technical scheme
For achieving the above object, the invention provides the cavity-enhanced electricity of a kind of FP and inject photonic crystal band edge surface-emitting laser, this laser comprises: deep pit 1, photonic crystal region 2, ridged bar 3, two naturally cleaved minute surfaces 4 that are parallel to each other, P electrode 5, active chip architecture and N electrode 11, wherein, active chip architecture comprises heavily doped layer 6 from top to bottom successively, last ducting layer 7, active layer 8, lower waveguide layer 9 and substrate layer 10, P electrode 5 is formed on the heavily doped layer 6, ridged bar 3 is formed at the top of ducting layer 7, the upper surface of ridged bar 3 contacts with the lower surface of heavily doped layer 6, and P electrode 5, heavily doped layer 6 and ridged bar 3 are aimed at fully; Photonic crystal region 2 is formed on the heavily doped layer 6, is positioned in the middle of the P electrode 5, has a plurality of deep pits 1 in the photonic crystal region 2, and its degree of depth runs through active layer 8 to lower waveguide layer 9 from the surface of active chip architecture always; N electrode 11 is formed at the back side of substrate layer 10; Two naturally cleaved minute surfaces 4 that are parallel to each other are to utilize naturally cleaved technology to form on the direction perpendicular to ridged bar 3, and it constitutes the FP chamber.
In the such scheme, the distance between described two naturally cleaved minute surfaces 4 that are parallel to each other is 500 microns, and is longer with respect to the width of photonic crystal region 2.
In the such scheme, described P electrode 5 is shaped as a rectangle, and long 500 microns, wide 100 microns, there is the circular hole of 80 microns of diameters the centre, and this is the position of being reserved for follow-up making photonic crystal region 2.The forming process of described P electrode 5 is as follows: on the heavily doped layer 6 of active chip architecture, utilize magnetron sputtering or electron beam evaporation process to form one deck P face metal level, this metal level is the Ti/Au alloy, thickness is 300 nanometers, then with ultraviolet optics photoetching and wet corrosion technique this metal level is made into P electrode 5.
In the such scheme, the thickness of described ridged bar 3 is 1.5 microns, less than the distance of heavily doped layer 6 to active layer 8, so the bottom surface of ridged bar 3 is arranged in ducting layer 7.The width of described ridged bar 3 is 120 microns, and is wide wide with respect to the ridged bar of one-sided mould FP laser, and the ridged bar of one-sided mould FP laser wide is 1 micron.The forming process of described ridged bar 3 is as follows: adopt ultraviolet optics photoetching and wet corrosion technique to form ridged bar 3 in the ducting layer 7 on active chip architecture, promptly in the ultraviolet optics photoetching process, use the overlay alignment technology, make the template graphics and P electrode 5 corresponding coincidences of ridged bar 3, produce the structure that is followed successively by P electrode 5, heavily doped layer 6 and ridged bar 3 from top to bottom.
In the such scheme, the cross sectional shape of described deep pit 1 is to have certain symmetric random geometry, and the medium in the deep pit 1 is an air, but or has a filled media of specific refractive index or nonlinear effect.
In the such scheme, the refractive index of described active layer 8 is higher than ducting layer 7 and lower waveguide layer 9.
In the such scheme, described N electrode 11 is that substrate layer 10 is thinned to 100 microns, is formed at the back side of substrate layer 10 again by electron beam evaporation process, and this N electrode 11 is the Au/Ge/Ni/Au alloy material, and thickness is 300 nanometers.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, the cavity-enhanced electricity of FP provided by the invention injects photonic crystal band edge surface-emitting laser, its photon crystal structure with deep pit can carry out modulation to active layer and FP chamber, form photonic crystal band edge pattern, and suppress the many side forms of many longitudinal modes in the FP chamber.
2, the cavity-enhanced electricity of FP provided by the invention injects photonic crystal band edge surface-emitting laser, its photon crystal structure has band edge surface launching character, utilize the one pole mould of the Γ point second preface band edge, not only can in the photonic crystal periodic planes, form large-area standing wave resonance, can also be in vertical plane direction coupling output.
3, the cavity-enhanced electricity of FP provided by the invention injects photonic crystal band edge surface-emitting laser, its photon crystal structure is positioned on the ridged bar, can carry out direct modulation to the mode of resonance in the FP chamber, same, the FP chamber provides strong feedback also can for the photonic crystal pattern.Though the photonic crystal region of making is less, the photonic crystal pattern still can obtain enough feedbacks, laser is swashed penetrate.The cost of manufacture of laser also can reducing and reduce with photonic crystal region.
4, the cavity-enhanced electricity of FP provided by the invention injects photonic crystal band edge surface-emitting laser, and its FP ridged bar width is wide a lot of with respect to traditional FP laser, for the solder joint of photonic crystal and contact conductor provides enough big platform.
5, the cavity-enhanced electricity of FP provided by the invention injects photonic crystal band edge surface-emitting laser, and its FP chamber appearance is longer for the photonic crystal region length of field, can provide enough feedbacks for the photonic crystal pattern.
6, the cavity-enhanced electricity of FP provided by the invention injects photonic crystal band edge surface-emitting laser, and its P electrode is positioned on the ridged bar fully, has saved the step of making conductive window in the traditional F P laser process, has simplified technological process, has improved the reliability of device.
7, the cavity-enhanced electricity of FP provided by the invention injects photonic crystal band edge surface-emitting laser, has stronger extensibility, it is according to the symmetry of photonic crystal lattice structure, can on some symmetry axis direction, make a plurality of FP chamber again, make its mode of resonance feed back enhancing, form the multichannel coupled resonance this direction.
Description of drawings
Fig. 1 is the structural representation of photonic crystal band edge surface-emitting laser in the prior art.
Fig. 2 is the structural representation of traditional ridged stripe shape FP laser.
Fig. 3 is a three-dimensional structure partial cutaway schematic of injecting photonic crystal band edge surface-emitting laser according to the cavity-enhanced electricity of the FP of first embodiment of the invention.
Fig. 4 is the plane graph according to the photonic crystal of first embodiment of the invention.
Fig. 5 is the energy band diagram according to the photonic crystal of first embodiment of the invention.
Fig. 6 is the plane graph according to the monopolar mode field distribution 12 of the photonic crystal Γ symmetric points second preface band edge of first embodiment of the invention.
Fig. 7 is the vertical cross section according to the monopolar mode field distribution 12 of the photonic crystal Γ symmetric points second preface band edge of first embodiment of the invention.
Fig. 8 is the vertical cross section according to the Vertical Launch field distribution of the monopolar mode of the photonic crystal Γ symmetric points second preface band edge of first embodiment of the invention.
Fig. 9 be according to the photonic crystal of first embodiment of the invention with after FP chamber ridged bar 3 combines, the vertical cross section of the monopolar mode field distribution 12 of the Γ symmetric points second preface band edge.
Figure 10 injects the floor map of the expansion of photonic crystal band edge surface-emitting laser on photonic crystal symmetry axis direction according to the cavity-enhanced electricity of the FP of second embodiment of the invention.
Figure 11 is the plane graph according to the photonic crystal of second embodiment of the invention.
Figure 12 injects the floor map of the expansion of photonic crystal band edge surface-emitting laser on photonic crystal symmetry axis direction according to the cavity-enhanced electricity of the FP of second embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 3 is a three-dimensional structure partial cutaway schematic of injecting photonic crystal band edge surface-emitting laser according to the cavity-enhanced electricity of the FP of first embodiment of the invention.The cavity-enhanced electricity of this FP injects photonic crystal band edge surface-emitting laser and comprises deep pit 1, photonic crystal region 2, ridged bar 3, two the naturally cleaved minute surfaces 4 that are parallel to each other, P electrode 5, active chip architecture and N electrodes 11.
Wherein, active chip architecture comprises heavily doped layer 6 from top to bottom successively, goes up ducting layer 7, active layer 8, lower waveguide layer 9 and substrate layer 10.Heavily doped layer 6 is the GaInAs material, and the P type mixes, and doping content is greater than 1.5E19 centimetre
-3, thickness is 250 nanometers.Last ducting layer 7 is the InP material, and the P type mixes, and doping content is 1.0E18 centimetre
-3, thickness is 1.67 microns.Active layer 8 is the AlGaInAs mqw material, undopes, and thickness is 340 nanometers, and spontaneous radiation centre wavelength is 1530 nanometers, and refractive index is higher than ducting layer 7 and lower waveguide layer 9.Ducting layer 9 is the InP material, and the N type mixes, and doping content is 1.0E18 centimetre
-3, thickness is 800 nanometers.Substrate layer 10 is the InP material, and the N type mixes, and thickness is generally greater than 300 microns.
Surface in the P of active chip architecture type one side, be on the heavily doped layer 6, utilize magnetron sputtering or electron beam evaporation process to form one deck P face metal level, in the present embodiment, this metal level is the Ti/Au alloy, thickness is about 300 nanometers, then with ultraviolet optics photoetching and wet corrosion technique this metal level is made into P electrode 5.P electrode 5 is shaped as a rectangle, and long 500 microns, wide 100 microns, there is the circular hole of 80 microns of diameters the centre, and this is the position of being reserved for follow-up making photonic crystal region 2.
Then on active chip architecture, form ridged bar 3 in the ducting layer 7 with ultraviolet optics photoetching and wet corrosion technique.Promptly in the ultraviolet optics photoetching process, use the overlay alignment technology, make the template graphics and P electrode 5 corresponding coincidences of ridged bar 3, so just can produce the structure that is followed successively by P electrode 5, heavily doped layer 6 and ridged bar 3 from top to bottom, this technology has been saved the step of making conductive window in the traditional F P laser process, simplify technological process, improved the reliability of device.
The thickness of ridged bar 3 is about 1.5 microns, less than the distance of heavily doped layer 6 to active layer 8, so the bottom surface of ridged bar is arranged in ducting layer 7.
Described FP ridged bar 3 wider width are about 120 microns, and are wide with respect to the ridged bar 3 of one-sided mould FP laser, as 1 micron, wide a lot.Wide ridged bar 3 provides enough big platform for the solder joint of photonic crystal and contact conductor.And wide the next many side forms in broadband can effectively be suppressed by photonic crystal.
Then utilize electron beam exposure and induction coupling and plasma etch process, the circular hole position of reserving at P electrode 5 makes photonic crystal region 2.Photonic crystal region 2 is formed on the heavily doped layer 6, can carry out direct modulation to the mode of resonance in the FP chamber.Hole in the photonic crystal region 2 is deep pit 1, its degree of depth can run through active layer 8 from wafer surface always, the cross sectional shape in hole can be to have certain symmetric random geometry, for example circular, medium in the hole can be an air, but also can be the filled media with specific refractive index or nonlinear effect.Deep pit 1 runs through active layer 8 to lower waveguide layer 9, and photonic crystal is directly modulated active area.
Then substrate layer 10 is thinned to about 100 microns, forms one deck N face metal level as N electrode 11 by electron beam evaporation process again, in the present embodiment, this N face metal level is the Au/Ge/Ni/Au alloy material, and thickness is about 300 nanometers.
At last, utilize naturally cleaved technology on perpendicular to the direction of ridged bar 3, to form two naturally cleaved minute surfaces 4 that are parallel to each other, thereby form the FP chamber.Distance between two naturally cleaved minute surfaces 4 is 500 microns, and it is long to be the chamber.The length in this chamber is longer with respect to the length of photonic crystal region 2.Long chamber length provides enough feedbacks for the photonic crystal pattern, and many longitudinal modes that long chamber length is brought can effectively be suppressed by photonic crystal.
Fig. 4 is the plane graph according to the photonic crystal of first embodiment of the invention.This photonic crystal has the periodicity of tetragonal lattice, and the cycle is a, and pore radius is r, and photonic crystal region 2 is the square of 50 microns of the length of sides.Described photon crystal structure is positioned on the ridged bar 3, and the mode of resonance in the FP chamber is carried out direct modulation, and is same, and the FP chamber provides strong feedback also can for the photonic crystal pattern.
Fig. 5 is the energy band diagram according to the photonic crystal of first embodiment of the invention.This energy band diagram is calculated by the plane wave expansion method, and c is the light velocity in the vacuum.All there are some band edges at each symmetric points place among the figure, wherein Γ 2-1 is the one pole mould of the Γ symmetric points second preface band edge, this pattern can form the large tracts of land standing wave resonance in photonic crystal region 2, exporting perpendicular to the relevant coupling of the direction (being the periodic normal direction of photonic crystal) of active layer 8, the angle of divergence of output beam is very little.
Fig. 6 is the plane graph according to the monopolar mode field distribution 12 of the photonic crystal Γ symmetric points second preface band edge of first embodiment of the invention.This figure is calculated by the Finite Difference-Time Domain separating method.In photonic crystal region 2, this pattern has formed the large tracts of land standing wave resonance.
Fig. 7 is the vertical cross section according to the monopolar mode field distribution 12 of the photonic crystal Γ symmetric points second preface band edge of first embodiment of the invention.This figure is calculated by the Finite Difference-Time Domain separating method.In photonic crystal region 2, this pattern has formed the large tracts of land standing wave resonance.Described photon crystal structure has band edge surface launching character, and band edge is meant near the frequency range Γ point second preface energy band edge, has the surface launching pattern based on the band edge slow light effect in this frequency range, and the frequency location of this pattern can be adjusted arbitrarily according to demand.
Fig. 8 is the vertical cross section according to the Vertical Launch field distribution of the monopolar mode of the photonic crystal Γ symmetric points second preface band edge of first embodiment of the invention.This figure is calculated by the Finite Difference-Time Domain separating method.Outside the photonic crystal plane, formed relevant coupling output perpendicular to active layer 8 directions (being the periodic normal direction of photonic crystal).
Fig. 9 be according to the photonic crystal of first embodiment of the invention with after FP chamber ridged bar 3 combines, the vertical cross section of the monopolar mode field distribution 12 of the Γ symmetric points second preface band edge.This figure is calculated by the Finite Difference-Time Domain separating method.Photonic crystal combines the back Γ symmetric points second preface band edge with FP chamber ridged bar 3 monopolar mode still can well resonance, and the field distribution shape is not affected, and intensity is subjected to the enhancing in FP chamber, and Vertical Launch character can not be affected yet.
Figure 10 injects the floor map of the expansion of photonic crystal band edge surface-emitting laser on photonic crystal symmetry axis direction according to the cavity-enhanced electricity of the FP of second embodiment of the invention.Symmetry according to the tetragonal lattice photonic crystal, on perpendicular to the direction of original ridged bar 3, make a ridged bar 14 again, and cleavage forms the FP chamber, make the mode of resonance of this direction also be subjected to the enhancing in FP chamber, the chamber that can adjust both direction FP chamber respectively is long, the FP chamber of both direction is strengthened different modes of resonance respectively, form multichannel coupled resonance.
Change the tetragonal lattice photonic crystal among first embodiment into the triangular crystal lattice photonic crystal, other structures are constant, and the laser of formation is as second embodiment.
Figure 11 is the plane graph according to the photonic crystal of second embodiment of the invention.This photonic crystal has the periodicity of triangular crystal lattice, and the cycle is a, and pore radius is r.The symmetry of triangular crystal lattice and tetragonal lattice is different, therefore can expand the FP chamber in different directions.
Figure 12 injects the floor map of the expansion of photonic crystal band edge surface-emitting laser on photonic crystal symmetry axis direction according to the cavity-enhanced electricity of the FP of second embodiment of the invention.According to the expansion thinking among first embodiment, can on some symmetry axis direction of triangular crystal lattice, make ridged bar 14 again, and cleavage or form the FP chamber by other modes, make the counterparty to mode of resonance also be subjected to the enhancing in FP chamber, the chamber that can adjust each direction FP chamber respectively is long, the FP chamber of all directions is strengthened identical or different mode of resonance respectively, form multichannel coupled resonance.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the cavity-enhanced electricity of FP injects photonic crystal band edge surface-emitting laser, it is characterized in that, this laser comprises: deep pit (1), photonic crystal region (2), ridged bar (3), two the naturally cleaved minute surfaces (4) that are parallel to each other, P electrode (5), active chip architecture and N electrodes (11)
Wherein, active chip architecture comprises heavily doped layer (6) from top to bottom successively, goes up ducting layer (7), active layer (8), lower waveguide layer (9) and substrate layer (10), P electrode (5) is formed on the heavily doped layer (6), ridged bar (3) is formed at the top of ducting layer (7), the upper surface of ridged bar (3) contacts with the lower surface of heavily doped layer (6), and P electrode (5), heavily doped layer (6) and ridged bar (3) are aimed at fully;
Photonic crystal region (2) is formed on the heavily doped layer (6), is positioned in the middle of the P electrode (5), has a plurality of deep pits (1) in the photonic crystal region (2), and its degree of depth runs through active layer (8) to lower waveguide layer (9) from the surface of active chip architecture always;
N electrode (11) is formed at the back side of substrate layer (10);
Two naturally cleaved minute surfaces (4) that are parallel to each other are to utilize naturally cleaved technology to form on the direction perpendicular to ridged bar (3), and it constitutes the FP chamber.
2. the cavity-enhanced electricity of FP according to claim 1 injects photonic crystal band edge surface-emitting laser, it is characterized in that, distance between described two naturally cleaved minute surfaces (4) that are parallel to each other is 500 microns, and is longer with respect to the width of photonic crystal region (2).
3. the cavity-enhanced electricity of FP according to claim 1 injects photonic crystal band edge surface-emitting laser, it is characterized in that, described P electrode (5) is shaped as a rectangle, long 500 microns, wide 100 microns, there is the circular hole of 80 microns of diameters the centre, and this is the position of being reserved for follow-up making photonic crystal region (2).
4. the cavity-enhanced electricity of FP according to claim 3 injects photonic crystal band edge surface-emitting laser, it is characterized in that the forming process of described P electrode (5) is as follows:
On the heavily doped layer (6) of active chip architecture, utilize magnetron sputtering or electron beam evaporation process to form one deck P face metal level, this metal level is the Ti/Au alloy, and thickness is rice in 300, then with ultraviolet optics photoetching and wet corrosion technique this metal level is made into P electrode (5).
5. the cavity-enhanced electricity of FP according to claim 1 injects photonic crystal band edge surface-emitting laser, it is characterized in that, the thickness of described ridged bar (3) is 1.5 microns, less than the distance of heavily doped layer (6) to active layer (8), so the bottom surface of ridged bar (3) is arranged in ducting layer (7).
6. the cavity-enhanced electricity of FP according to claim 1 injects photonic crystal band edge surface-emitting laser, it is characterized in that, the width of described ridged bar (3) is 120 microns, and is wide wide with respect to the ridged bar of one-sided mould FP laser, and the ridged bar of one-sided mould FP laser wide is 1 micron.
7. inject photonic crystal band edge surface-emitting laser according to claim 5 or the cavity-enhanced electricity of 6 described FP, it is characterized in that the forming process of described ridged bar (3) is as follows:
Adopt ultraviolet optics photoetching and wet corrosion technique on active chip architecture, to form ridged bar (3) in the ducting layer (7), promptly in the ultraviolet optics photoetching process, use the overlay alignment technology, make the template graphics and the corresponding coincidence of P electrode (5) of ridged bar (3), produce the structure that is followed successively by P electrode (5), heavily doped layer (6) and ridged bar (3) from top to bottom.
8. the cavity-enhanced electricity of FP according to claim 1 injects photonic crystal band edge surface-emitting laser, it is characterized in that, the cross sectional shape of described deep pit (1) is to have certain symmetric random geometry, medium in the deep pit (1) is an air, but or has a filled media of specific refractive index or nonlinear effect.
9. the cavity-enhanced electricity of FP according to claim 1 injects photonic crystal band edge surface-emitting laser, it is characterized in that the refractive index of described active layer (8) is higher than ducting layer (7) and lower waveguide layer (9).
10. the cavity-enhanced electricity of FP according to claim 1 injects photonic crystal band edge surface-emitting laser, it is characterized in that, described N electrode (11) is that substrate layer (10) is thinned to 100 microns, be formed at the back side of substrate layer (10) again by electron beam evaporation process, this N electrode (11) is the Au/Ge/Ni/Au alloy material, and thickness is rice in 300.
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| JP2019091839A (en) * | 2017-11-16 | 2019-06-13 | 株式会社東芝 | Surface-emission quantum cascade laser |
| CN111934201A (en) * | 2020-09-29 | 2020-11-13 | 武汉云岭光电有限公司 | Silicon-based hybrid integration and tunable laser of tunable laser and preparation method thereof |
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