CN102200691B - Online measuring mark and method of projection objective lens image surface of photo-etching machine - Google Patents
Online measuring mark and method of projection objective lens image surface of photo-etching machine Download PDFInfo
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- CN102200691B CN102200691B CN 201010131943 CN201010131943A CN102200691B CN 102200691 B CN102200691 B CN 102200691B CN 201010131943 CN201010131943 CN 201010131943 CN 201010131943 A CN201010131943 A CN 201010131943A CN 102200691 B CN102200691 B CN 102200691B
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Abstract
The invention provides an online measuring mark of a projection objective lens image surface of a photo-etching machine and a measuring method using the mark. The measuring mark is a continuous scale mark. By using the mark, an optimal imaging height of each position in an imaging view field of the photo-etching machine is obtained by using an exposure method; and parameters of a projection objective lens of the photo-etching machine like mirror surface, field curvature and high-order field curvature are finally fitted.
Description
Technical field
The present invention relates to field of lithography, relate in particular to a kind of projection lens of lithography machine image planes on-line measurement mark and measuring method.
Background technology
Lithographic equipment is mainly used in the manufacturing of integrated circuit (IC) or other microdevice.By lithographic equipment, mask graph can be imaged on the wafer that is coated with photoresist, for example semiconductor wafer or LCD plate.Lithographic equipment exposes by projection objective, the mask graph of design is transferred on the photoresist, and as the core parts of lithographic equipment, there is material impact the image planes position of projection objective to the optical patterning quality.
In order to obtain best imaging effect, when exposure, the upper wafer surface that scribbles photoresist need place best image planes height.Therefore, in the system integration stage, need critically to determine the best image planes of object lens position.
Known method is the precision that guarantees object plane or image planes by mechanical frock mode, yet the precision of mechanical frock is generally μ m magnitude, as will further improving precision, can increase the complexity of processing, also can significantly increase manufacturing cost, and be unfavorable for carrying out on-line measurement.US Patent No. 5856052 has just disclosed a kind of method of determining the image planes position by the stepping exposure.Namely utilize the method for exposure, by step-searching in certain scope, can get the preferable relatively image planes position of image quality.When best image planes and desired location differed big, the method for this kind step-searching can not once search image planes.Therefore, how to provide that a kind of measurement range is big, the simple measuring method of searching method, become a big problem of industry research.
Summary of the invention
The object of the present invention is to provide a kind of measurement adaptability strong, measurement range is big, measuring accuracy is high, and can obtain the online certification mark of litho machine image planes and the measuring method of the high-order curvature of field.
For achieving the above object, the present invention is by design continuous type scale phenotypic marker, and utilize this mark by exposure method, and obtain the optimal imaging height of each position in the litho machine imaging viewing field, finally simulate the parameters such as image planes, the curvature of field, the high-order curvature of field of projection lens of lithography machine.
The present invention proposes a kind of projection lens of lithography machine image planes on-line measurement mark, the described scale phenotypic marker that has scale that is labeled as continuous distribution, described scale phenotypic marker mountain scale lines, the station location marker that has scale formed.
Wherein, station location marker comprises millimeter station location marker and micron station location marker.
Wherein, wide 1 to 3 times of being generally described projection objective resolution of scale lines, millimeter station location marker line thickness is generally 2 to 10 times of described projection objective resolution, and micron station location marker line thickness is generally 1.5 to 10 times of described projection objective resolution.
The invention allows for a kind of method of utilizing aforementioned measurement markers that the projection objective image planes are carried out on-line measurement, the device that described method is used comprises: the light source that produces projected light beam; Be used for to adjust the light distribution of the light beam that described light source sends and the illuminator of partial coherence factor; The imaging optical system that mask pattern imaging and its numerical aperture can be able to be regulated; Can carry described mask and pinpoint mask platform; Can carry silicon chip and pinpoint work stage; Can make the pinpoint laser interferometer of work stage;
Described method comprises following steps:
(1) light that sends of described light source shines on the mask that is carved with described measurement markers through described illuminator, mask optionally sees through a part of light, this part light is through described imaging optical system, and exposure image is to being positioned on the silicon chip at best image planes place with certain angle of inclination b around the y axle;
(2) development silicon chip is examined under a microscope the imaging mark, finds imaging position the most clearly, calculates photo-etching machine objective lens image planes approximate location;
(3) with certain step height, near the image planes that step (2) obtains, measurement markers is exposed to the diverse location of silicon chip successively;
(4) behind the development silicon chip, read the optimal imaging height that is marked at a plurality of positions, and simulate parameters such as image planes height, inclination, the high-order curvature of field.
Wherein, in step (2), if the imaging of examining under a microscope position x=a, then photo-etching machine objective lens image planes approximate location Fcoarse=a*b the most clearly.
Wherein, in step (4), by the optimal imaging height Δ F at diverse location x place
i, the fitting formula of match image planes height F, inclination Ry, secondary curvature of field FC2, three curvature of field FC3 is:
ΔF
i＝F+x*Rv+x
2*FC2+x
3FC3。
Measurement markers provided by the invention has adopted the design of continuous distribution, has remedied the discrete deficiency that distributes of conventional tag.
Description of drawings
By the embodiment of the invention and in conjunction with the description of its accompanying drawing, can further understand purpose, specific structural features and the advantage of its invention.Wherein, accompanying drawing is:
Figure 1 shows that the structural representation that has the scale label phenotypic marker according to an embodiment of the invention;
Figure 2 shows that employed system schematic in the embodiments of the invention;
Figure 3 shows that according to the angular relationship synoptic diagram between silicon chip in the embodiments of the invention and the best image planes;
Figure 4 shows that the synoptic diagram according to stepping exposure in the embodiments of the invention.
Embodiment
Below, describe in detail according to a preferred embodiment of the invention by reference to the accompanying drawings.For convenience of description and highlight the present invention, omitted existing associated components in the prior art in the accompanying drawing, and will omit the description to these well-known components.
What as shown in Figure 1, the measurement markers of present embodiment design was x to continuous distribution has a scale label phenotypic marker 201.This mark comprises scale lines 202, millimeter station location marker 203, micron station location marker 204.Wherein, scale lines 202 are wide 2 microns, millimeter station location marker 203 is made up of 5 microns lines, micron station location marker 204 is made up of (because of all being that form with the multiple of projection objective resolution provides these sizes in front summary of the invention and the claim 3 microns lines, wish to provide the parameter of the resolution of projection objective herein, to embody these multiple relations).
As shown in Figure 2, system used in the present invention comprises: the light source 101 that produces projected light beam; Be used for to adjust the light distribution of the light beam that described light source sends and the illuminator 102 of partial coherence factor; Can be with the imaging optical system 104 (enlargement ratio 0.25) of mask pattern imaging; Can carry mask 103 and pinpoint mask platform 108; Can carry silicon chip 105 and pinpoint work stage 106; Can make the pinpoint laser interferometer 107 of work stage.
Utilize the step of said apparatus and measurement markers 201 measurement projection lens of lithography machine image planes as follows:
1. the deep ultraviolet laser that sends of light source 101 shines on the mask 103 that is carved with described measurement markers 201 through illuminator 102, mask optionally sees through a part of light, this part light is through imaging optical system 104, exposure image around the y axle with certain angle of inclination (for example arrives, 2mrad) be positioned near the best image planes 301 the silicon chip 105, as shown in Figure 3;
2. the development silicon chip is examined under a microscope the imaging mark, finds imaging position the most clearly, calculates photo-etching machine objective lens image planes approximate location;
3. centered by the image planes that step 2 obtains, with 1 micron be step height, from-10 microns to 10 microns, successively with described mark 201 exposures to the diverse location of silicon chip 105, as shown in Figure 4;
4. behind the development silicon chip, read and be marked at-the optimal imaging height at 10mm ,-8 ,-6 ,-4 ,-2,0,2,4,6,8,10mm place, and simulate image planes height, inclination, the secondary curvature of field, three curvature of field.
In the step 2, if the imaging of examining under a microscope position x=a, then photo-etching machine objective lens image planes approximate location Fcoarse=a*2mrad the most clearly.
In the step 4, by the optimal imaging height Δ F of diverse location (x)
i, the fitting formula of match image planes height F, inclination Ry, secondary curvature of field FC2, three curvature of field FC3 is:
ΔF
i＝F+x*Ry+x
2*FC2+x
3FC3。
Described in this instructions is several preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (3)
1. method of the projection lens of lithography machine image planes being carried out on-line measurement, described method is used a kind of measurement markers, the described scale phenotypic marker that has scale that is labeled as continuous distribution, the described scale phenotypic marker that has scale is made up of scale lines, station location marker, and the device that described method is used comprises: the light source that produces projected light beam; Be used for to adjust the light distribution of the light beam that described light source sends and the illuminator of partial coherence factor; The imaging optical system that mask pattern imaging and its numerical aperture can be able to be regulated; Can carry described mask and pinpoint mask platform; Can carry silicon chip and pinpoint work stage; Can make the pinpoint laser interferometer of work stage;
Described method comprises following steps:
(1) light that sends of described light source shines on the mask that is carved with described measurement markers through described illuminator, mask optionally sees through a part of light, this part light is through described imaging optical system, and exposure image is to being positioned on the silicon chip at best image planes place with certain angle of inclination b around the y axle;
(2) development silicon chip is examined under a microscope the imaging mark, finds imaging position the most clearly, calculates photo-etching machine objective lens image planes approximate location;
(3) with certain step height, near the image planes that step (2) obtains, measurement markers is exposed to the diverse location of silicon chip successively;
(4) behind the development silicon chip, read the optimal imaging height that is marked at a plurality of positions, and simulate image planes height, inclination and the high-order curvature of field.
2. method according to claim 1, wherein, in step (2), if the imaging of examining under a microscope position x=a, then photo-etching machine objective lens image planes approximate location Fcoarse=a*b the most clearly.
3. method according to claim 2, wherein, in step (4), by the optimal imaging height Δ F at diverse location x place
i, the fitting formula of match image planes height F, inclination Ry, secondary curvature of field FC2, three curvature of field FC3 is:
ΔF
i＝F+x*Ry+x
2*FC2+x
3*FC3。
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| CN 201010131943 CN102200691B (en) | 2010-03-25 | 2010-03-25 | Online measuring mark and method of projection objective lens image surface of photo-etching machine |
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|---|---|---|---|
| CN 201010131943 CN102200691B (en) | 2010-03-25 | 2010-03-25 | Online measuring mark and method of projection objective lens image surface of photo-etching machine |
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| CN102200691A CN102200691A (en) | 2011-09-28 |
| CN102200691B true CN102200691B (en) | 2013-08-14 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1188328A (en) * | 1997-01-15 | 1998-07-22 | 合泰半导体股份有限公司 | Process for manufacturing optical shade of zero level of integrated circuit |
| CN101354530A (en) * | 2008-09-11 | 2009-01-28 | 友达光电股份有限公司 | Contraposition scale on mask and method for affirming shield part position using the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006039148A (en) * | 2004-07-26 | 2006-02-09 | Toshiba Corp | Photomask, focus measuring method using therefor, and manufacturing method of semiconductor device |
| US7474393B2 (en) * | 2004-09-13 | 2009-01-06 | Joel C. Wojciechowski | Method and apparatus for determining a vertical intensity profile along an illuminating beam |
| JP2007044889A (en) * | 2005-08-08 | 2007-02-22 | Dainippon Printing Co Ltd | Measuring method of printing register, register mark and forming device of register mark |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1188328A (en) * | 1997-01-15 | 1998-07-22 | 合泰半导体股份有限公司 | Process for manufacturing optical shade of zero level of integrated circuit |
| CN101354530A (en) * | 2008-09-11 | 2009-01-28 | 友达光电股份有限公司 | Contraposition scale on mask and method for affirming shield part position using the same |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2007-44889A 2007.02.22 |
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Address after: 201203 Zhangjiang Road, Zhangjiang hi tech park, Pudong District, Shanghai, 1525 Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Zhangjiang Road, Zhangjiang hi tech park, Pudong District, Shanghai, 1525 Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |