CN102184917B - Global system for mobile communications (GSM) radio-frequency emission front-end module adopting Quad Flat No-lead package - Google Patents

Global system for mobile communications (GSM) radio-frequency emission front-end module adopting Quad Flat No-lead package Download PDF

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CN102184917B
CN102184917B CN2011100737512A CN201110073751A CN102184917B CN 102184917 B CN102184917 B CN 102184917B CN 2011100737512 A CN2011100737512 A CN 2011100737512A CN 201110073751 A CN201110073751 A CN 201110073751A CN 102184917 B CN102184917 B CN 102184917B
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radio
frequency
gsm
end module
power amplifier
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CN102184917A (en
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陈俊
谢利刚
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Spreadtrum Communications Shanghai Co Ltd
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Ruidi Kechuang Microelectronic (Beijing) Co Ltd
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Priority to PCT/CN2011/072590 priority patent/WO2012129819A1/en
Priority to TW100115940A priority patent/TW201240046A/en
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Abstract

The invention discloses a global system for mobile communications (GSM) radio-frequency emission front-end module adopting quad flat no-lead package. A metal frame of the module comprises an output matching network, a radio-frequency antenna switch, a power controller and a radio-frequency power amplifier. The module is characterized in that: the output matching network, the radio-frequency antenna switch, the power controller and the radio-frequency power amplifier are manufactured into corresponding semiconductor tube cores through different semiconductor processes respectively; and the semiconductor tube cores are stuck on the metal frame. Compared with the prior art, the invention has the advantages that: the cost of the GSM radio-frequency emission front-end module adopting the quad flat no-lead package can be effectively reduced; and the whole price cost of handheld equipment with the GSM radio-frequency emission front-end module is reasonably reduced.

Description

Adopt the GSM radio-frequency transmissions front-end module of quad flat non-leaded chip package
Technical field
The present invention relates to the Generation Mobile Telecommunication System field, specifically, the present invention relates to a kind of GSM radio-frequency transmissions front-end module that adopts quad flat non-leaded chip package.
Background technology
Current, 3-G (Generation Three mobile communication system) is just disposed more and more widely in the world and is used, yet, GSM (Global System for Mobile Communication) as the Generation Mobile Telecommunication System standard remains the mobile communication standard that is most widely used in the world.The shipment amount of GSM handheld device has occupied the overwhelming majority of present all mobile communication equipment shipment amounts, and smaller szie, RF front-end module is the development trend of GSM mobile handset terminal more cheaply.
Usually, a GSM radio-frequency transmissions front-end module comprises the parts such as GSM radio-frequency power amplifier tube core, controller tube core, matching network and radio-frequency antenna switch tube core.The radio-frequency power amplifier tube core need to adopt GaAs heterojunction bipolar transistor (GaAs HBT) or the manufacturing of silicon-based field-effect transistors (MOSFET) technique usually, realizes the power amplification to the GSM radiofrequency signal.The controller tube core adopts the manufacturing of complementary metal oxide semiconductors (CMOS) (CMOS) technique usually, its control signal that is input to the radio-frequency transmissions front-end module according to the outside is controlled the operating state of whole radio-frequency transmissions front-end module, such as the watt level of control radio-frequency power amplifier tube core output radiofrequency signal, select the path of radio-frequency antenna switch etc.Matching network is the output matching network of radio-frequency power amplifier tube core, usually is comprised of a plurality of inductance, electric capacity or transformer passive device.The way of realization of matching network both can be to adopt the discrete component manufacturing, also can adopt integrated passive devices (IPD, Integrated Passive Device) technique that matching network is manufactured a tube core.Radio-frequency antenna switch tube core is the radio-frequency (RF) switch that hilted broadsword is thrown more normally, radio-frequency transmissions path and radio frequency reception path have been comprised, usually by GaAs high-mobility field-effect transistor (GaAs HEMT) technique manufacturing, also can use P type-insulation-N-type (PIN) diode technique to realize.As mentioned above, a plurality of functional modules in the GSM radio-frequency transmissions front-end module have adopted different semiconductor fabrication process, so it is a multi-chip modules (MCM, Multi-Chip-Module).
Usually GSM radio-frequency transmissions front-end module all needs to adopt Background Grid array packages (LGA, Land Grid Array) form to be packaged into an independent semiconductor device.Described radio-frequency power amplifier tube core, controller tube core, matching network (discrete component or IPD tube core) and radio-frequency antenna switch tube core are mounted on the LGA laminated multi-layer substrate (Laminate Substrate), interconnect by the metal routing on bonding line (Bondwire) and the LGA substrate, the schematic diagram of a typical LGA encapsulation GSM radio-frequency transmissions front-end module as shown in Figure 1.Usually the LGA substrate that adopts is the laminated multi-layer substrate, comprised the metal level more than 2 layers or 2 layers (metal material is the material such as copper or aluminium normally), adjacent metal can interconnect by via hole between the different metal layer by mutually isolation of insulation material layer (can be the materials such as epoxy resin or pottery).
As shown in Figure 1, in the described GSM radio-frequency transmissions front-end module 100, comprise 4 tube cores: power controller tube core (CMOS controller tube core) U1, GaAs HBT radio-frequency power amplifier tube core U2, IPD tube core U3 and radio-frequency antenna switch tube core U4.Above-mentioned 4 tube cores are mounted on the upper surface of LGA substrate, bonding welding pad (Pad) on 4 tube cores is connected to the respective pin of module by bonding line 111, bonding welding pad such as CMOS controller tube core U1 is connected to control signal pin VC1 by bonding line, VC2, VC3 and VC4 etc., the bonding welding pad of radio-frequency power amplifier tube core U2 is connected to radio-frequency input signals pin RFin1 by bonding line, RFin2 etc., the bonding welding pad of IPD tube core U3 is connected to ground signalling pin GND1 by bonding line, GND2, GND3 and GND4 etc., the bonding welding pad of radio-frequency antenna switch tube core U4 is connected to radio frequency receiving signal pin RX1 by bonding line, RX2 etc.Can also make the passive devices such as inductance required in the circuit on the LGA substrate, planar spiral inductor 101 and 102 as shown in fig. 1, or straight line inductance 106 etc., above-mentioned inductance component all is made on certain one deck metal level of LGA substrate, and the port of these inductance or be connected with the pin of module directly that (end such as planar spiral inductor 102 is connected with power supply signal pin VCC2, an end of 106 is connected with power supply signal pin VCC1), perhaps being connected with bonding welding pad on the corresponding tube core by bonding line, (end such as 101 is connected by the corresponding bonding welding pad of bonding line with radio-frequency antenna switch tube core U4, an end of 102 is connected by the corresponding bonding welding pad of bonding line with IPD tube core U3, and an end of 106 is connected by the corresponding bonding welding pad of bonding line with IPD tube core U3 and radio-frequency power amplifier tube core U2).In the LGA encapsulation, interconnecting between the tube core, can (directly be connected by bonding line as between CMOS controller tube core U1 and the radio-frequency antenna switch tube core U4 by directly connecting by bonding line between the corresponding bonding welding pad on the tube core separately, directly be connected by bonding line between IPD tube core U3 and the radio-frequency antenna switch tube core U4, directly be connected by bonding line between radio-frequency power amplifier tube core U2 and the IPD tube core U3); Perhaps can at first the bonding welding pad on the first tube core be connected to an end of LGA substrate upper strata cabling by bonding line, then the other end of described cabling is connected to bonding welding pad on the second tube core by bonding line, thereby realized the interconnecting of two corresponding bonding welding pads of tube core (be connected to an end of LGA upward wiring 110 by bonding line such as the bonding welding pad on the CMOS controller tube core U1, an other end of 110 is connected to bonding welding pad on the radio-frequency power amplifier tube core U2 by bonding line).
As shown in Figure 1, the planar spiral inductor 102 that is produced on LGA substrate upper metal layers is connected to the second layer metal layer by via hole 103, cabling 104 is at the second layer metal layer, and be connected to upper metal layers by via hole 105, and then cabling 104 is connected to the power pin VCC2 of radio-frequency transmissions front-end module.Need to prove, the thickness of LGA substrate metal layer is tens microns, makes live width and can reach hundreds of microns, thereby so that the dead resistance very little (usually below 0.1 ohm) of the inductance of making, obtain high Q value inductance, guaranteed the high efficiency of GSM RF front-end module.Especially at GSM low-frequency range (824MHz-915MHz), the Q value of used inductance is very large to the RF front-end module performance impact.
The manufacturing of LGA substrate comprises lamination, the boring of metal level and insulation material layer and fills the steps such as metal material, photoetching metal level cabling figure, the unnecessary figure of etching, plated metal; Mount a plurality of tube cores on the LGA substrate that manufacturing is finished, then connect each bonding welding pad that need to connect, pin and port etc. by bonding apparatus; Coat whole substrate, tube core and bonding line through sealing resin more at last, finally finish the GSM radio-frequency transmissions front-end module of LGA encapsulation.Need to prove, in the GSM radio-frequency transmissions front-end module of above-mentioned LGA encapsulation of giving an example, adopted the IPD method to realize the output matching network of radio-frequency power amplifier; Certainly, also can adopt the discrete elements such as inductance, electric capacity to realize output matching network.When adopting the output matching network of discrete component form, in the manufacture process of LGA encapsulation GSM radio-frequency transmissions front-end module, also need to increase these discrete components are mounted on process on the LGA substrate.As mentioned above, no matter be the output matching network that adopts the IPD form, still adopt discrete component to consist of output matching network, the manufacturing of the GSM radio-frequency transmissions front-end module of LGA packing forms is all very complicated, so that the cost of whole module is very high.Usually, in the middle of the overall cost of LGA encapsulation GSM radio-frequency front-end transmitter module, the cost of LGA Substrate manufacture and encapsulation has accounted for about 50%.As mentioned above, can see, the packaging cost that reduces the GSM RF front-end module is the effective means that reduces its total cost.
The packing forms that is most widely used in semiconductor packages is quad flat non-leaded chip package (QFN, Quad Flat Non-leaded package).The QFN encapsulation does not need to adopt multilager base plate, it is the exposed flat metal frame of an integral body, semiconductor element is mounted on the middle surface of this metal frame, bonding welding pad on the tube core is connected on the respective pin of QFN metal frame by bonding line, as shown in Figure 2, adopt at last the encapsulants such as resin or plastics that tube core and QFN metal frame are coated, just finished the semiconductor device of QFN encapsulation.As shown in Figure 2, in the semiconductor device 200 of QFN encapsulation, two tube core U1 and U2 are mounted on the metal surface at QFN metal framework 201 centers, by bonding line 202, the corresponding bonding welding pad of U1 and U2 can be linked together, perhaps the corresponding bonding welding pad with U1 and U2 is connected with the pin of QFN framework.QFN is as the widely used standard packaging form of semiconductor applications, have very abundant sources of supply, and do not need as LGA it to be customized manufacturing, manufacturing process is also very simple, therefore the cost of QFN encapsulation is very cheap, and this is that those skilled in the art are in common knowledge.
As mentioned above, if can adopt the QFN encapsulation to make GSM radio-frequency transmissions front-end module, will have very large cost advantage.But because the metal framework in the QFN encapsulation is a block of metal, whole is one in electrical connection, and therefore mounting discrete passive component thereon can be more difficult than LGA form.Current explore in the industry QFN encapsulation manufacture a product middle majority can not integrated output matching network, but printed circuit board (PCB) (PCB) realization that mounts at product.For example, U.S. RFMD company once released the GSM radio-frequency power amplifier product RF2173 that adopts the QFN encapsulation, it does not comprise the radio-frequency antenna switch, it or not a complete GSM radio-frequency transmissions front-end module, and it is placed on the output matching network of radio-frequency power amplifier on the PCB outside the encapsulation, so that the integrated level of whole radio-frequency transmissions front end is lower, the cost advantage of QFN encapsulation does not embody fully.
In patent application (application number 200910202072.3), a kind of method of making the inductance that is used for radio-frequency power amplifier at QFN encapsulation employing bonding line has been proposed, can realize the high Q value of Embedded, the low-loss output matching network.But inductor quantity and inductance value thereof that the method can realize in an encapsulation all are subjected to considerable restraint; And capacity cell required in the output matching network still need to realize at semiconductor element, and this has just increased the complexity of bonding line annexation.For the output matching network of GSM four frequency range radio-frequency power amplifiers, usually need a plurality of inductance and capacity cell, adopt this technology not meet the demands fully.
In sum, how to provide that a kind of integrated level is high, size is little, cost is low, and can realize the GSM radio-frequency transmissions front-end module of square flat non-pin (QFN) encapsulation of high Q value inductance, just become problem demanding prompt solution.
Summary of the invention
Technical problem to be solved by this invention provides a kind of GSM radio-frequency transmissions front-end module that adopts quad flat non-leaded chip package, high to solve existing GSM radio-frequency transmissions front-end module cost of manufacture, cause the overall price high cost problem with the handheld device of GSM radio-frequency transmissions front-end module.
For solving the problems of the technologies described above, the invention provides a kind of GSM radio-frequency transmissions front-end module that adopts quad flat non-leaded chip package, comprise on the metal framework of this module: output matching network, radio-frequency antenna switch, power controller and radio-frequency power amplifier, it is characterized in that, described output matching network, radio-frequency antenna switch, power controller and radio-frequency power amplifier adopt respectively different semiconductor technologies to be made into corresponding semiconductor element, and above-mentioned semiconductor element is mounted on the described metal framework.
Further, the GSM radio-frequency transmissions front-end module of employing quad flat non-leaded chip package of the present invention, wherein, at least one choke induction is made by the half corroding metal bar that arranges at described metal framework on the described radio-frequency power amplifier.
Further, wherein, bonding jumper one end of described half corrosion is communicated with the pin on the described metal framework.
Further, wherein, described bonding jumper be shaped as straight line, arc or snakelike.
Further, wherein, the radio-frequency power amplifier of described radio-frequency power amplifier for supporting that GSM high band and low-band signal amplify.
Further, wherein, the radio-frequency power amplifier of described radio-frequency power amplifier for adopting GaAs heterojunction bipolar transistor technique or silicon-on-insulator process to make.
Further, wherein, described output matching network adopts the manufacturing of integrated passive devices technique.
Further, wherein, described radio-frequency antenna switch adopts GaAs high electron mobility field-effect transistor technique to make; Described power controller adopts the CMOS (Complementary Metal Oxide Semiconductor) technology manufacturing.
Further, wherein, adopt silicon-on-insulator process to be made into 1 semiconductor element described output matching network and radio-frequency antenna switch.
Further, wherein, having the pin more than three or three on the described metal framework at least is that direct current is communicated with.
Compared with prior art, the GSM radio-frequency transmissions front-end module of employing quad flat non-leaded chip package of the present invention, can effectively reduce the cost of GSM RF front-end module, thereby reasonably, reduce the overall price cost with the handheld device of GSM radio-frequency transmissions front-end module.
Description of drawings
Fig. 1 is the GSM radio-frequency transmissions front-end module structure chart of existing employing LGA encapsulation;
Fig. 2 is existing square flat non-pin (QFN) encapsulating structure figure;
Fig. 3 is the circuit diagram of the GSM radio-frequency transmissions front-end module of the described employing quad flat non-leaded chip package of the embodiment of the invention;
Fig. 4 is the structure chart of the GSM radio-frequency transmissions front-end module of the described employing quad flat non-leaded chip package of the embodiment of the invention;
Fig. 5 is the profile along tangent line A-A shown in Figure 4 of the GSM radio-frequency transmissions front-end module of the described employing quad flat non-leaded chip package of the embodiment of the invention.
Embodiment
Main thought of the present invention is that the existing GSM radio-frequency transmissions front-end module cost of manufacture of solution is high, causes the overall price high cost problem with the handheld device of GSM radio-frequency transmissions front-end module.The GSM radio-frequency transmissions front-end module of employing square flat non-pin of the present invention (QFN) encapsulation can effectively reduce the cost of GSM RF front-end module, thereby reasonably, reduce the overall price cost with the GSM handheld device.Below embodiment is described in detail, but not as a limitation of the invention.
The below is a specific embodiment of the technical scheme of QFN encapsulation proposed by the invention, shown in Fig. 3 and 4, adopts the circuit diagram of the GSM radio-frequency transmissions front-end module of QFN encapsulation for the embodiment of the invention is described; Wherein comprised 4 semiconductor device on the QFN metal framework 300 of module, be respectively: output matching network U1, radio-frequency antenna switch U2, power controller (CMOS controller) U3, radio-frequency power amplifier U4.Described integrated passive devices U1, radio-frequency antenna switch U2, power controller U3 and radio-frequency power amplifier U4 adopt respectively different semiconductor technologies to be made into corresponding semiconductor element, and above-mentioned semiconductor element is mounted on the described metal framework 300.
Output matching network U1 and radio-frequency antenna switch U2 are mounted on the zone 305 of QFN metal framework 300 in the present embodiment, and power controller U3 and radio-frequency power amplifier U4 are mounted on the zone 304 of QFN metal framework 300.
Wherein, described output matching network U1 adopts the technique manufacturing of making integrated passive devices (IPD) in the present embodiment; Described radio-frequency antenna switch U2 can adopt the manufacturing of GaAs high electron mobility field-effect transistor technique; Described power controller U3 can adopt the technique manufacturing of complementary metal oxide semiconductors (CMOS); The radio-frequency power amplifier of described radio-frequency power amplifier U4 for supporting that GSM high band (1710MHz-1910MHz signal) and low-frequency range (824MHz-915MHz signal) signal amplify; Described radio-frequency power amplifier U4 can adopt the technique manufacturing of GaAs heterojunction bipolar transistor technique or silicon-on-insulator (SOI:Silicon-On-Insulator).
Certainly, in other embodiments of the invention, output matching network U1 and radio-frequency antenna switch U2 can also take a kind of suitable semiconductor technology, integrate such as the mode of silicon-on-insulator (SOI:Silicon-On-Insulator) technique, form a semiconductor element; In like manner, also can adopt a kind of suitable semiconductor technology to integrate power controller U3 and radio-frequency power amplifier U4, form a semiconductor element.Concrete which kind of semiconductor technology that adopts is (such as ambipolar-field effect transistor technique, BiCMOS:Bipolar-CMOS) make and specifically how to make up these functional circuits, then require to select according to specific design, this knows altogether for those skilled in the art, is not specifically limited in the present invention.
Radio-frequency antenna switch U2 is the radio-frequency antenna switch that a hilted broadsword four is thrown in the present embodiment; GSM radio-frequency input signals RFin1 (GSM high band 1710MHz-1910MHz signal) and RFin2 (GSM low-frequency range 824MHz-915MHz signal) finish power amplification through radio-frequency power amplifier U4.Described this output matching network U1 not only comprises the planar spiral inductor shown in 4 306,307 among the figure, also comprises the passive devices such as some electric capacity and inductance.
Transmit path and at least one of the radio-frequency antenna switch U2 that described hilted broadsword four is thrown and GSM high band and low-frequency range receive signal path and link to each other, its hilted broadsword is connected to the antenna pin ANT of GSM radio-frequency transmissions front-end module in the present embodiment, and four throw and are connected respectively to that the GSM high band transmits and low-frequency range transmits and two-way receives signal RX1, RX2.
Described power controller U3 controls the operating state of whole GSM radio-frequency transmissions front-end module according to the control signal VC1-VC4 of outside input, the radio frequency path that is connected to such as hilted broadsword among the output signal power size of control radio-frequency power amplifier U4 and the radio-frequency antenna switch U2.
All link to each other by bonding line 303 between the pin on described semiconductor element and the QFN metal framework 300 as shown in Figure 4, between the described semiconductor element.
At least one choke induction that arranges on the described radio-frequency power amplifier is made by the bonding jumper 301 of half corrosion that arranges at QFN metal framework 300, as shown in Figure 5, these bonding jumper 301 two ends are communicated with pin on the described QFN metal framework 300 respectively, and the basal surface of this bonding jumper 301 is higher than the basal surface of all pins and mounting semiconductor die area on the described QFN metal framework 300.Having the pin more than three or three at least at QFN metal framework 300 is that direct current is communicated with.
As shown in Figure 4, need the bonding welding pad of ground connection all to be connected to the grounded part that the large tracts of land on the QFN metal framework is communicated with on the described QFN metal framework 300.Simultaneously; the output matching network U1 that comprises on the described QFN metal framework 300, radio-frequency antenna switch U2, power controller U3 and radio-frequency power amplifier U4 can also have static and discharge (ESD) path; thereby played the esd protection effect; this configuration mode can significantly improve the ESD grade of the upper capacitor element of output matching network U1, satisfies the industrial products requirement.
What need to further specify is, because the present invention also needs to realize the inductance (choke induction) of very low dead resistance on the direct current supply path of radio-frequency power amplifier, especially at the peak current of GSM low-frequency range (800MHz-915MHz) radio-frequency power amplifier work up to 1.5A, require the dead resistance of inductor less than 0.1 ohm, just can the efficient of radio-frequency power amplifier not affected greatly.And output matching network U1 makes the employing semiconductor fabrication usually, and its conductive metal layer film thickness is very thin, is generally micron dimension, and the inductance parasitic resistance of making thus is all larger, will worsen the efficient of radio-frequency power amplifier U4.Therefore in the present embodiment, as shown in Figure 4, the upper choke induction that arranges of the radio-frequency power amplifier U4 of GSM low-frequency range is realized by the bonding jumper 301 on the QFN metal framework 300.Particularly, in an embodiment of the present invention, the first end of bonding jumper 301 is communicated with the Power supply pin (VCC1, VCC2) of QFN metal framework 300, and Power supply pin (VCC1, VCC2) provides Power supply by the corresponding bonding welding pad that bonding line can be connected to power controller U3 and radio-frequency antenna switch U2 for it; The second end of bonding jumper 301 is communicated with the pin 308,309 of QFN metal framework 300, the part that comprises bonding jumper 301 between power pin (VCC1, VCC2) and pin 308,309 has just consisted of the choke induction of GSM low-frequency range radio-frequency power amplifier; The basal surface of bonding jumper 301 top shadows part is higher than the basal surface of zone 304,305 and all pins.The back side of the GSM radio-frequency transmissions front-end module of so last QFN encapsulation only has metal pin and zone the 304, the 305th, exposes, and half corroding metal bar 301 is coated by the resin-encapsulated material, thereby with the metal pin insulation isolation of non-physical connection on every side, as isolating with metal pin VC1-VC4 insulation; And by two or more metal pins that bonding jumper 301 connects, remain and keep direct current to be communicated with, as shown in Figure 4, metal pin 308 and VCC2.The metal thickness of half corroding metal bar 301 is generally half of pin thickness, is about 100 microns, and width also can reach 100 microns usually, and the direct current dead resistance is very little.Because bonding jumper 301 can be made thicklyer (above tens microns), so its dead resistance is very little, is suitable for consisting of the choke induction of GSM low-frequency range radio-frequency power amplifier fully.Here the relation of bonding jumper 301 and pin thickness and position, as shown in Figure 5 QFN encapsulation profile.
Because the lower surface of half corroding metal bar 301 is unsettled in the bonding process, in order to reduce the risk on the manufacturing process, bonding jumper 301 is connected to the upper bonding of pin (such as the VCC1 among Fig. 4, VCC2,308 and 309) that all bonding lines in the circuit all are chosen in the QFN metal framework.Also need to prove, bonding jumper 301 achieved inductance value are relevant with its length, and the longer then inductance value of its length is larger; In order to make the overall dimensions minimum of the QFN encapsulation GSM RF front-end module of finally finishing, need in circuit design, design guarantee this inductance the sense value at 2nH between the 5nH, this can be by radio-frequency power amplifier tube core U4 the appropriate design of output matching network reach, this is to know altogether general knowledge to those skilled in the art.
The shape that it should be noted that simultaneously bonding jumper 301 is not defined as straight line, can be arc or the curved shape such as snakelike yet, requires as long as its equivalent inductance value reaches circuit design.And difference according to actual needs also can at the similar choke induction of QFN realization more than two or two, be used for GSM low-frequency range radio-frequency power amplifier, GSM high band radio-frequency power amplifier and prime choke induction thereof simultaneously.But, increase difficulty and size that such choke induction number can increase QFN metal framework Design and manufacture, need in implementation, weigh selection, but all within spirit of the present invention.
In addition, as shown in Figure 3, comprise the two-way radio-frequency (RF) power amplifier circuit in the present embodiment among the radio-frequency power amplifier U4, support simultaneously GSM low-frequency range (824MHz-915MHz) and GSM high band (1710MHz-1910MHz).Aforesaid bonding jumper 301 has been realized the required choke induction of GSM low-frequency range radio-frequency (RF) power amplifier circuit, and the required choke induction of GSM high band radio-frequency (RF) power amplifier circuit, because it is lower for dead resistance and the requirement of Q value, adopted in the present embodiment bonding line to realize with the mode that the upper inductance of output matching network U1 combines.In addition, as shown in Figure 4, the GSM radio-frequency transmissions front-end module of the described QFN encapsulation of the present embodiment is when practical application, and power pin on pcb board (VCC1, VCC2) needs to connect at least one decoupling capacitor (C1, C2), and its appearance value scope is the nF-uF magnitude.
In addition, usually electrostatic protection (ESD) grade of the capacitor element that output matching network U1 makes a little less than, be 50V-500V Human Body Model (HBM) is lower, can not reach the ESD grade of HBM＞2000V that industrial products require usually.And, usually do not provide the esd protection device in the IPD technique that making output matching network U1 adopts, can only avoid the upper device of output matching network U1 to be subject to the direct infringement of static by the global design of whole GSM radio-frequency transmissions front-end module.
In addition, need to prove, comprised in the present embodiment 4 tube cores that adopt different process to make in the GSM radio-frequency transmissions front-end module, yet the number of tube core is not as the restriction to spirit of the present invention.Any change and modification on the present embodiment basis all are considered to still within the protection range of claims of the present invention.Compared with prior art, the GSM radio-frequency transmissions front-end module of employing QFN of the present invention encapsulation, can effectively reduce the cost of GSM radio-frequency transmissions front-end module, thereby reasonably, reduce the overall price cost with the handheld device of GSM radio-frequency transmissions front-end module.
Certainly; the present invention also can have other various embodiments; in the situation that do not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.

Claims (7)

1. GSM radio-frequency transmissions front-end module that adopts quad flat non-leaded chip package, comprise on the metal framework of this module: output matching network, radio-frequency antenna switch, power controller and radio-frequency power amplifier, it is characterized in that, described output matching network, radio-frequency antenna switch, power controller and radio-frequency power amplifier adopt respectively different semiconductor technologies to be made into corresponding semiconductor element, and above-mentioned semiconductor element is mounted on the described metal framework; Wherein, at least one choke induction is made by the half corroding metal bar that arranges at described metal framework on the described radio-frequency power amplifier; The bonding jumper thickness of described half corrosion is half of metal framework pin thickness, and the basal surface of the bonding jumper of described half corrosion is higher than the basal surface of metal framework pin, and an end of the bonding jumper of described half corrosion is connected with the Power supply pin on the described metal framework.
2. the GSM radio-frequency transmissions front-end module of described employing quad flat non-leaded chip package according to claim 1 is characterized in that, described half corroding metal bar be shaped as straight line, arc or snakelike.
3. the GSM radio-frequency transmissions front-end module of described employing quad flat non-leaded chip package according to claim 1 is characterized in that, the radio-frequency power amplifier of described radio-frequency power amplifier for supporting that GSM high band and low-band signal amplify.
4. the GSM radio-frequency transmissions front-end module of described employing quad flat non-leaded chip package according to claim 3, it is characterized in that the radio-frequency power amplifier of described radio-frequency power amplifier for adopting GaAs heterojunction bipolar transistor technique or silicon-on-insulator process to make.
5. the GSM radio-frequency transmissions front-end module of described employing quad flat non-leaded chip package according to claim 1 is characterized in that, described output matching network adopts the manufacturing of integrated passive devices technique.
6. the GSM radio-frequency transmissions front-end module of described employing quad flat non-leaded chip package according to claim 1 is characterized in that, described radio-frequency antenna switch adopts GaAs high electron mobility field-effect transistor technique to make; Described power controller adopts the CMOS (Complementary Metal Oxide Semiconductor) technology manufacturing.
7. the GSM radio-frequency transmissions front-end module of arbitrary described employing quad flat non-leaded chip package in 6 according to claim 1 is characterized in that, having the pin more than three or three on the described metal framework at least is that direct current is communicated with.
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