CN102184905A - Micro-interconnection welding spot structure of single intermetallic compounds - Google Patents
Micro-interconnection welding spot structure of single intermetallic compounds Download PDFInfo
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- CN102184905A CN102184905A CN 201110105411 CN201110105411A CN102184905A CN 102184905 A CN102184905 A CN 102184905A CN 201110105411 CN201110105411 CN 201110105411 CN 201110105411 A CN201110105411 A CN 201110105411A CN 102184905 A CN102184905 A CN 102184905A
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Abstract
The invention discloses a micro-interconnection welding spot structure of single intermetallic compounds, and relates to the micro-interconnection welding spot structure, aiming at solving the problems that the existing micro-interconnection welding spot structure is easy to break under the action of external force or stress generated under the condition that the expansion on heating and contraction on cooling of different materials are inconsistent. The welding spot structure comprises a chip substrate, a first metallic welding disc, a single intermetallic compound layer, a second metallic welding disc and a circuit board, wherein the lower end surface of the chip substrate is connected with the upper end surface of the first metallic welding disc; the lower end surface of the first metallic welding disc is connected with the upper end surface of the single intermetallic compound layer; the lower end surface of the single intermetallic compound layer is connected with the upper end surface of the second metallic welding disc; and the lower end surface of the second metallic welding disc is connected with the upper end surface of the circuit board. The micro-interconnection welding spot structure is applicable to electric signal and mechanical connection among chips or between the chips and the circuit board.
Description
Technical field
The present invention relates to a kind of little interconnection welding spot structure.
Background technology
Electronic product is also had higher requirement to its performance and useful life in the time of microminiaturized and multifunctional direction development.Little interconnection solder joint is as bridge electric between chip and the circuit board, mechanical connection, to electronic product performance and fundamental influence is arranged useful life.
Little interconnection solder joint is by brazing filler metal alloy, method by soldering and chip and the reaction of circuit board surface metal pad form, and this type of little interconnection solder joint normally is made of chip metal pad, intermetallic compound, brazing filler metal alloy, intermetallic compound or circuit board metal pad.The solder joint both sides all exist intermetallic compound/brazing filler metal alloy, intermetallic compound/metal pad interface, and in addition, intermetallic compound may be multiple (as Cu
6Sn
5And Cu
3Sn), also have the interface between the compound, because the material of brazing filler metal alloy, intermetallic compound and pad metal is different, its physical property also has than big-difference.Under the stress that produces under the inconsistent situation of expanding with heat and contract with cold in external force or by different materials, rupture at the linkage interface place of brazing filler metal alloy, intermetallic compound and pad metal easily.In case this situation occurs, electronic product can't be worked, and thoroughly lose efficacy.The performance of little interconnection solder joint and useful life and its structural relation are close, by to its structure innovation design improving solder joint and electronic product performance, and to prolong its useful life will be a kind of valid approach.
Summary of the invention
The purpose of this invention is to provide the little interconnection welding spot structure of compound between a kind of monometallic, expand with heat and contract with cold in external force or by different materials under the stress that produces under the inconsistent situation, the problem of fracture takes place easily to solve present little interconnection welding spot structure.
The present invention solves the problems of the technologies described above the technical scheme of taking to be: described welding spot structure comprises chip substrate, first metal pad, single intermetallic compounds layer, second metal pad and circuit board of planting, the lower surface of chip substrate is connected with the upper surface of first metal pad, the lower surface of first metal pad is connected with single upper surface of planting intermetallic compounds layer, single lower surface of planting intermetallic compounds layer is connected with the upper surface of second metal pad, and the lower surface of second metal pad is connected with the upper surface of circuit board.
The present invention has following beneficial effect: structure of the present invention eliminated brazing filler metal alloy with and with the both sides intermetallic compound interface, the weak interface of little interconnection solder joint is significantly reduced, avoid taking place the fracture possibility; 2. in the electronic product use, compound can't continue reaction with pad metal between monometallic, makes welding spot structure possess excellent stability; 3. in general, the intermetallic compound fusing point will be higher than brazing filler metal alloy, and the creep-resistant property of this little interconnection welding spot structure is significantly improved, and then improves little interconnection solder joint performance, and prolongs its useful life.
Description of drawings
Fig. 1 is an overall structure cutaway view of the present invention.
Embodiment
Embodiment one: present embodiment is described in conjunction with Fig. 1, the welding spot structure of present embodiment comprises chip substrate 1, first metal pad 2, single intermetallic compounds layer 3, second metal pad 4 and circuit board 5 of planting, the lower surface of chip substrate 1 is connected with the upper surface of first metal pad 2, the lower surface of first metal pad 2 is connected with single upper surface of planting intermetallic compounds layer 3, single lower surface of planting intermetallic compounds layer 3 is connected with the upper surface of second metal pad 4, and the lower surface of second metal pad 4 is connected with the upper surface of circuit board 5.
Embodiment two: in conjunction with Fig. 1 present embodiment is described, the metal pad 2 and the metal pad 4 of present embodiment are the Cu metal pad, and single material of planting intermetallic compounds layer 3 is Cu
3Sn, Cu is widely used in electronic product owing to possess good conduction, heat conductivility.Other compositions and annexation are identical with embodiment one.
Embodiment three: present embodiment is described in conjunction with Fig. 1, first metal pad 2 and second metal pad 4 of present embodiment are the Au metal pad, single material of planting intermetallic compounds layer 3 is AuSn, Au can be widely used in electronic product owing to possessing good conduction, heat conductivility.Other compositions and annexation are identical with embodiment one.
Embodiment four: in conjunction with Fig. 1 present embodiment is described, first metal pad 2 and second metal pad 4 of present embodiment are the Ag metal pad, and single material of planting intermetallic compounds layer 3 is Ag
3Sn, Ag is widely used in electronic product owing to possess good conduction, heat conductivility.Other compositions and annexation are identical with embodiment one.
Embodiment five: present embodiment is described in conjunction with Fig. 1, first metal pad 2 and second metal pad 4 of present embodiment are the Pd metal pad, single material of planting intermetallic compounds layer 3 is PdSn, Pd is widely used in electronic product owing to possess good conduction, heat conductivility.Other compositions and annexation are identical with embodiment one.
Embodiment six: in conjunction with Fig. 1 present embodiment is described, first metal pad 2 and second metal pad 4 of present embodiment are the Ni metal pad, and single material of planting intermetallic compounds layer 3 is Ni
3Sn
4, Ni is widely used in electronic product owing to possess good conduction, heat conductivility.Other compositions and annexation are identical with embodiment one.
Embodiment seven: in conjunction with Fig. 1 present embodiment is described, first metal pad 2 and second metal pad 4 of present embodiment are the Pt metal pad, and single material of planting intermetallic compounds layer 3 is PtSn
4, Pt is widely used in electronic product owing to possess good conduction, heat conductivility.Other compositions and annexation are identical with embodiment one.
Embodiment eight: in conjunction with Fig. 1 present embodiment is described, first metal pad 2 of present embodiment and second metal pad, 4 diameters or side size range are 10 microns-1 millimeter, and thickness range is 0.1 micron-1 millimeter.Other compositions and annexation are identical with embodiment one.
Embodiment nine: in conjunction with Fig. 1 present embodiment is described, single kind intermetallic compounds layer 3 diameters or the side size range of present embodiment are 10 microns-1 millimeter, and thickness range is 0.1 micron-1 millimeter.Other compositions and annexation are identical with embodiment one.
Claims (9)
1. the little interconnection welding spot structure of compound between a monometallic, described welding spot structure comprises chip substrate (1), first metal pad (2), single intermetallic compounds layer (3) of planting, second metal pad (4) and circuit board (5), the lower surface that it is characterized in that chip substrate (1) is connected with the upper surface of first metal pad (2), the lower surface of first metal pad (2) is connected with single upper surface of planting intermetallic compounds layer (3), single lower surface of planting intermetallic compounds layer (3) is connected with the upper surface of second metal pad (4), and the lower surface of second metal pad (4) is connected with the upper surface of circuit board 5.
2. according to the little interconnection welding spot structure of compound between the described monometallic of claim 1, it is characterized in that first metal pad (2) and second metal pad (4) are the Cu metal pad, single material of planting intermetallic compounds layer (3) is Cu
3Sn.
3. according to the little interconnection welding spot structure of compound between the described monometallic of claim 1, it is characterized in that first metal pad (2) and second metal pad (4) are the Au metal pad, single material of planting intermetallic compounds layer (3) is AuSn.
4. according to the little interconnection welding spot structure of compound between the described monometallic of claim 1, it is characterized in that first metal pad (2) and second metal pad (4) are the Ag metal pad, single material of planting intermetallic compounds layer (3) is Ag
3Sn.
5. according to the little interconnection welding spot structure of compound between the described monometallic of claim 1, it is characterized in that first metal pad (2) and second metal pad (4) are the Pd metal pad, single material of planting intermetallic compounds layer (3) is PdSn.
6. according to the little interconnection welding spot structure of compound between the described monometallic of claim 1, it is characterized in that first metal pad (2) and second metal pad (4) are the Ni metal pad, single material of planting intermetallic compounds layer (3) is Ni
3Sn
4
7. according to the little interconnection welding spot structure of compound between the described monometallic of claim 1, it is characterized in that first metal pad (2) and second metal pad (4) are the Pt metal pad, single material of planting intermetallic compounds layer (3) is PtSn
4
8. according to the little interconnection welding spot structure of compound between claim 1 or 2 described monometallics, it is characterized in that first metal pad (2) and second metal pad (4) diameter or side size range are 10 microns-1 millimeter, thickness range is 0.1 micron-1 millimeter.
9. the little interconnection welding spot structure of compound between described according to Claim 8 monometallic is characterized in that single kind intermetallic compounds layer (3) diameter or side size range are 10 microns-1 millimeter, and thickness range is 0.1 micron-1 millimeter.
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| CN 201110105411 CN102184905A (en) | 2011-04-26 | 2011-04-26 | Micro-interconnection welding spot structure of single intermetallic compounds |
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| CN 201110105411 CN102184905A (en) | 2011-04-26 | 2011-04-26 | Micro-interconnection welding spot structure of single intermetallic compounds |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104690383A (en) * | 2015-02-09 | 2015-06-10 | 大连理工大学 | Preparation method and structure of fully intermetallic compound interconnection solder joints |
| CN104862701A (en) * | 2015-05-11 | 2015-08-26 | 哈尔滨工业大学 | Method for fast preparing high-temperature service total IMC microscale solder joint through multi-layer micron and submicron film |
| CN106513890A (en) * | 2016-11-17 | 2017-03-22 | 大连理工大学 | Method for preparing electronic packaging microscale solder joints |
| CN106735663A (en) * | 2017-01-17 | 2017-05-31 | 大连理工大学 | The preparation method and structure of compound thin space microbonding point between a kind of all-metal |
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| CN1282645A (en) * | 1999-08-02 | 2001-02-07 | 国际商业机器公司 | Nickel alloy film used for reducting the formation of compound between metals in soldering flux |
| US6429530B1 (en) * | 1998-11-02 | 2002-08-06 | International Business Machines Corporation | Miniaturized chip scale ball grid array semiconductor package |
| US20040108135A1 (en) * | 2002-10-11 | 2004-06-10 | Takeshi Ashida | Circuit board, mounting structure of ball grid array, electro-optic device and electronic device |
| CN1986142A (en) * | 2006-12-06 | 2007-06-27 | 深圳市亿铖达工业有限公司 | No-lead soft soldering alloy |
| CN101728289A (en) * | 2008-10-10 | 2010-06-09 | 哈尔滨工业大学深圳研究生院 | Room temperature ultrasonic soldering method for area array encapsulated electronic components |
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2011
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| CN1202405A (en) * | 1997-06-04 | 1998-12-23 | 国际商业机器公司 | Electrodeposition of low temperature, high conductivity, powder materials for electrically conductive paste formulations |
| US6429530B1 (en) * | 1998-11-02 | 2002-08-06 | International Business Machines Corporation | Miniaturized chip scale ball grid array semiconductor package |
| CN1282645A (en) * | 1999-08-02 | 2001-02-07 | 国际商业机器公司 | Nickel alloy film used for reducting the formation of compound between metals in soldering flux |
| US20040108135A1 (en) * | 2002-10-11 | 2004-06-10 | Takeshi Ashida | Circuit board, mounting structure of ball grid array, electro-optic device and electronic device |
| CN1986142A (en) * | 2006-12-06 | 2007-06-27 | 深圳市亿铖达工业有限公司 | No-lead soft soldering alloy |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104690383A (en) * | 2015-02-09 | 2015-06-10 | 大连理工大学 | Preparation method and structure of fully intermetallic compound interconnection solder joints |
| CN104862701A (en) * | 2015-05-11 | 2015-08-26 | 哈尔滨工业大学 | Method for fast preparing high-temperature service total IMC microscale solder joint through multi-layer micron and submicron film |
| CN104862701B (en) * | 2015-05-11 | 2017-03-29 | 哈尔滨工业大学 | A kind of employing multilamellar micron, submicron film quickly prepare can the full IMC microbondings point of high-temperature service method |
| CN106513890A (en) * | 2016-11-17 | 2017-03-22 | 大连理工大学 | Method for preparing electronic packaging microscale solder joints |
| CN106513890B (en) * | 2016-11-17 | 2019-01-01 | 大连理工大学 | A kind of preparation method of Electronic Packaging microbonding point |
| CN106735663A (en) * | 2017-01-17 | 2017-05-31 | 大连理工大学 | The preparation method and structure of compound thin space microbonding point between a kind of all-metal |
| CN106735663B (en) * | 2017-01-17 | 2019-05-28 | 大连理工大学 | The preparation method and structure of compound thin space microbonding point between a kind of all-metal |
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Application publication date: 20110914 |