CN102184888B - Multilayer copper interconnection manufacturing method - Google Patents
Multilayer copper interconnection manufacturing method Download PDFInfo
- Publication number
- CN102184888B CN102184888B CN 201110089375 CN201110089375A CN102184888B CN 102184888 B CN102184888 B CN 102184888B CN 201110089375 CN201110089375 CN 201110089375 CN 201110089375 A CN201110089375 A CN 201110089375A CN 102184888 B CN102184888 B CN 102184888B
- Authority
- CN
- China
- Prior art keywords
- copper
- connection
- nitride film
- femtosecond laser
- copper nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention relates to a copper interconnection manufacturing method belonging to the field of micro-nano manufacture. The method utilizes the sputtering or atomic layer deposition technology to prepare a copper nitride film, and utilizes a femtosecond laser writing technology to form copper elementary substance at the area needing metal interconnection by using laser decomposition, thus realizing copper interconnection by one step; and since the metal copper is formed by conducting laser thermal decomposition on the plane of the copper nitride, additional chemical polishing is not needed to realize surface planarization.
Description
Technical field
The present invention relates to a kind of copper-connection manufacture method, belong to field of micro-Na manufacture.
Background technology
At microelectronic, along with the integrated circuit (IC)-components characteristic size is constantly dwindled, in order to improve device reliability and useful life, chip is metal interconnected to be shifted to copper-connection by the aluminium interconnection, and the multilayer interconnection technology had become VLSI and ultra large scale integrated circuit (ULSI) preparation technology's important component part already; Multilayer interconnect structure, mainly comprise interconnection between local interconnect, metal interconnecting wires and upper/lower layer metallic line etc., need between the metal interconnecting wires to isolate with dielectric, this insulating barrier is called as inter-level dielectric (ILD), it also is the physical support body of upper strata metal wire simultaneously, be smooth degree to ILD as the requirement of metal wire supporter, planarization ILD becomes one master operation of multilayer interconnection technology.
Because the chloride that the copper metal produces in etching process is not volatile, so can't prepare figure with plasma etching, dual damascene (Dual Damascene) technique of IBM invention is ingenious this problem that solved then, in dual damascene process, at first the medium of oxides layer is carried out etching, produce the groove that is used for mosaic technology, next plated metal barrier layer, copper seed layer, again by the ECP electroplating technology filling up copper in the groove, utilize at last Cu chemico-mechanical polishing (CMP) technique to realize the copper planarization, copper interconnection chemical mechanically mechanical polishing is present unique practical technique and core technology that can realize the chip leveling, this techniqueflow is many, complex process.
Copper nitride is quite stable at room temperature, but its thermal decomposition (2Cu
3N → 6Cu+N
2) temperature (360
oAbout C) lower [Z. Q. Liu, W. J. Wang, T. M. Wang, S. Chao and S. K. Zheng, Thermal stability of copper nitride films prepared by rf magnetron sputtering, Thin Solid Films, 325 (1998) 55-59], the copper nitride rear elemental copper that resolves into easily of being heated, the Japan scientist utilizes common laser (780 nm in nineteen ninety, 7 mW) decompose copper nitride film, the orderly periodic structure that has prepared plane copper nitride/copper, be used for optical storage, [M. Asano, K. Umeda, and A. Tasaki, Cu3N Thin film for a new light recording media, Jpn. J. Appl. Phys., 29,1985 (1990)], calendar year 2001, the Japan scientist utilizes magnetically controlled sputter method to prepare copper nitride film, and use the beam bombardment copper nitride film, the copper quantum dot of formation 3 μ m * 3 μ m and 1 μ m * 1 μ m in the copper nitride plane [Toshikazu Nosaka,, a, Masaaki Yoshitakea, Akio Okamotoa, Soichi Ogawaa and Yoshikazu Nakayama, Thermal decomposition of copper nitride thin films and dots formation by electron beam writing, Applied Surface Science, 169-170 (2001) 358-361].
Femtosecond laser has the characteristic that common laser does not have, namely has ultrashort, superpower and high focusing power, femtosecond laser can concentrate on its energy the very little zone of action (100 nanometers even less zone) of restriction all, quickly and accurately, the present invention is in conjunction with copper nitride low-temperature decomposition effect and femtosecond laser technology characteristics, a kind of novel multiple layer of copper interconnect fabrication processes is proposed, this technology is utilized femtosecond laser thermal decomposition copper nitride, directly change into copper by copper nitride in interconnection line region, need not etching, realized simultaneously planarization.
Summary of the invention
The present invention proposes a kind of novel multi-layer copper-connection manufacture method, utilize sputter or technique for atomic layer deposition to prepare copper nitride film, utilize the femtosecond laser direct writing technology, in the metal interconnected zone of needs, utilize laser to be decomposed to form copper simple substance, one stepization realization copper-connection because metallic copper LASER HEAT on the copper nitride plane is decomposed to form, is realized flattening surface so need not extra chemical polishing.
A kind of copper-connection manufacture method is characterized in that: utilize sputter or technique for atomic layer deposition to prepare copper nitride film,
Femtosecond laser is radiated at the zone that needs copper-connection on the copper nitride film, utilizes the thermal effect of laser to decompose copper nitride formation copper simple substance, a stepization realization copper-connection.
Described a kind of copper-connection manufacture method is characterized in that: the copper nitride film thickness of described deposition is at 50 ~ 200 nm.
Described a kind of copper-connection manufacture method is characterized in that: wavelength 200 ~ 400 nanometers of described femtosecond laser, arteries and veins
Rush width at 25 ~ 100 femtoseconds, pulse power is burnt at 0.2 ~ 2 milli, and repetition rate is at 600 ~ 1000 hertz.
Described a kind of copper-connection manufacture method, it is characterized in that: described copper nitride film is placed on the sample stage of an energy three-dimensional regulation, the femtosecond laser direct irradiation is on the copper nitride film surface, height and horizontal direction by sample stage are regulated, the position of control femtosecond laser focused spot, sample stage moves in the horizontal direction, utilize femtosecond laser needing the sector scanning of copper-connection, form copper-connection, the zone that does not scan still is copper nitride, need not to remove, and form a plane with copper connecting lines.
Technique effect of the present invention is: utilize femtosecond laser thermal decomposition copper nitride, directly change into copper by copper nitride in interconnection line region, need not etching, realized simultaneously planarization.
Description of drawings
Fig. 1 is the realizing route of the copper-connection in the example one, the representative copper of black wherein, the representative copper nitride of white.
Embodiment
Further specify content of the present invention below in conjunction with example:
Example one:
1, utilizes sputtering method cvd nitride copper on silicon chip;
On silicon chip, utilize sputtering method cvd nitride copper.Sputtering target adopts fine copper target (99.999%), base vacuum 1.0 * 10
-4Pa, underlayer temperature 150
oC, working gas are high pure nitrogen (99.999%), and gas flow is controlled at 30 sccm, and operating pressure is controlled at about 1Pa, deposit the copper nitride of 100 nanometer thickness.
2, utilize femtosecond laser in the heating of desired zone location, make copper nitride be decomposed into copper;
The design parameter that femtosecond laser incides on the copper nitride film is: wavelength 200 nm, and pulse duration 25 femtoseconds, pulse energy 0.5 milli is burnt, 1000 hertz of repetition rates;
Adjust the height of sample stage, allow femtosecond laser focus on the surface of copper nitride film, sample stage moves horizontally, translational speed 0.1 little meter per second.
3, deposit subsequently the copper nitride of 100 nanometer thickness at this layer copper nitride film recycling sputtering method;
Step 3 with step 1.
4, again utilize femtosecond laser in the heating of desired zone location, make copper nitride be decomposed into copper;
Step 4 is identical with step 2.
5, deposit the copper nitride film of 100 nanometer thickness at this layer copper nitride film recycling sputtering method, with step 1.
6, again utilize femtosecond laser in the heating of desired zone location, make copper nitride be decomposed into copper, with step 2, form solid interconnection as shown in Figure 1.
Claims (2)
1. copper-connection manufacture method, it is characterized in that: utilize sputter or technique for atomic layer deposition to prepare copper nitride film, femtosecond laser is radiated at the zone that needs copper-connection on the copper nitride film, utilizes the thermal effect of laser to decompose copper nitride formation copper simple substance, a stepization realization copper-connection; Wavelength 200 ~ 400 nanometers of described femtosecond laser, pulse duration are at 25 ~ 100 femtoseconds, and pulse power is burnt at 0.2 ~ 2 milli, and repetition rate is at 600 ~ 1000 hertz; Described copper nitride film is placed on the sample stage of an energy three-dimensional regulation, the femtosecond laser direct irradiation is on the copper nitride film surface, height and horizontal direction by sample stage are regulated, the position of control femtosecond laser focused spot, sample stage moves in the horizontal direction, and utilizes femtosecond laser needing the sector scanning of copper-connection, form copper-connection, the zone that does not scan still is copper nitride, need not to remove, and forms a plane with copper connecting lines.
2. a kind of copper-connection manufacture method as claimed in claim 1, it is characterized in that: the copper nitride film thickness of described deposition is at 50 ~ 200 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110089375 CN102184888B (en) | 2011-04-11 | 2011-04-11 | Multilayer copper interconnection manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110089375 CN102184888B (en) | 2011-04-11 | 2011-04-11 | Multilayer copper interconnection manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102184888A CN102184888A (en) | 2011-09-14 |
| CN102184888B true CN102184888B (en) | 2013-10-30 |
Family
ID=44571042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110089375 Expired - Fee Related CN102184888B (en) | 2011-04-11 | 2011-04-11 | Multilayer copper interconnection manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102184888B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102530836A (en) * | 2011-12-26 | 2012-07-04 | 深圳光启高等理工研究院 | Microstructure processing method |
| CN102517551B (en) * | 2011-12-26 | 2013-10-30 | 常州大学 | Preparation method for three-dimensional photonic crystal |
| CN103796440A (en) * | 2013-11-07 | 2014-05-14 | 溧阳市江大技术转移中心有限公司 | Method for forming conducting circuit at insulated metal plate |
| CN103596374B (en) * | 2013-11-07 | 2016-08-17 | 溧阳市江大技术转移中心有限公司 | The method forming conducting wire on flexible PCB |
| CN103813622A (en) * | 2013-11-07 | 2014-05-21 | 溧阳市江大技术转移中心有限公司 | Circuit board and manufacturing method thereof |
| CN103596373A (en) * | 2013-11-07 | 2014-02-19 | 南京邮电大学 | Integrated circuit plate manufacturing method based on copper nitride film |
| CN103763862A (en) * | 2014-01-17 | 2014-04-30 | 西安工程大学 | Method for manufacturing flexible printed circuit board |
| CN106304659A (en) * | 2016-08-28 | 2017-01-04 | 广西小草信息产业有限责任公司 | A kind of manufacture method of surface-mounted integrated circuit |
| CN108388735B (en) * | 2018-02-28 | 2022-04-22 | 深圳市恒凯微电子科技有限公司 | Method for designing integrated circuit with porous medium layer |
| CN112919430B (en) * | 2021-01-26 | 2023-04-25 | 江苏库博德金属科技有限公司 | Preparation method and application of copper nitride powder |
| CN116153861B (en) * | 2023-04-19 | 2023-07-11 | 武汉楚兴技术有限公司 | Semiconductor structure and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143650A (en) * | 1999-01-13 | 2000-11-07 | Advanced Micro Devices, Inc. | Semiconductor interconnect interface processing by pulse laser anneal |
| CN1439060A (en) * | 2000-04-28 | 2003-08-27 | Ekc技术公司 | Method for depositing metal and metal oxide films and patterned films |
| CN1448755A (en) * | 2003-05-09 | 2003-10-15 | 中国科学院上海光学精密机械研究所 | Method for preparing periodic microstructure on metal film by femtosecond laser |
-
2011
- 2011-04-11 CN CN 201110089375 patent/CN102184888B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143650A (en) * | 1999-01-13 | 2000-11-07 | Advanced Micro Devices, Inc. | Semiconductor interconnect interface processing by pulse laser anneal |
| CN1439060A (en) * | 2000-04-28 | 2003-08-27 | Ekc技术公司 | Method for depositing metal and metal oxide films and patterned films |
| CN1448755A (en) * | 2003-05-09 | 2003-10-15 | 中国科学院上海光学精密机械研究所 | Method for preparing periodic microstructure on metal film by femtosecond laser |
Non-Patent Citations (1)
| Title |
|---|
| 岳光辉，闫鹏勋.氮化铜薄膜的制备及其物理性能.《人工晶体学报》.2005,第34卷(第1期),第150页，第154页. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102184888A (en) | 2011-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102184888B (en) | Multilayer copper interconnection manufacturing method | |
| US5290732A (en) | Process for making semiconductor electrode bumps by metal cluster ion deposition and etching | |
| JP5392215B2 (en) | Film forming method and film forming apparatus | |
| CN109994423A (en) | Physical vapor deposition process for semiconductor interconnection structure | |
| JP5920808B2 (en) | Method for forming wiring pattern | |
| Cacouris et al. | Laser direct writing of aluminum conductors | |
| CN107123733A (en) | Utilize the ion beam milling of low-temperature chip temperature | |
| JP2020004999A (en) | Method for permanent connection of two metal surfaces | |
| TW200915400A (en) | Film forming method, and film forming apparatus | |
| JPH07206417A (en) | Method of producing heat-sunk electronic part and said electronic part | |
| RU2323553C1 (en) | Method for laser deposition of copper from electrolyte solution on surface of dielectric | |
| TW569330B (en) | Forming a semiconductor structure using a combination of planarizing methods and electropolishing | |
| US7804175B2 (en) | Semiconductor structures including conductive vias continuously extending therethrough and methods of making the same | |
| TW201301391A (en) | Methods for repairing low-k dielectrics using carbon plasma immersion | |
| US10163796B2 (en) | Surface treatment for semiconductor structure | |
| TW201925532A (en) | Methods and apparatus for filling substrate features with cobalt | |
| JP2005532675A (en) | Method for producing a metal-containing thin layer having low electrical resistance | |
| CN100364045C (en) | Semiconductor device manufacturing method | |
| KR101278235B1 (en) | Semiconductor integrated circuit device and method for producing the same | |
| US5331172A (en) | Ionized metal cluster beam systems and methods | |
| CN105575751A (en) | Systems and methods for removing contamination from seed layer surface | |
| KR20120113766A (en) | Interconnection structure made of redirected carbon nanotubes | |
| CN100541761C (en) | Formation has the method for the interconnection structure of the electricity of attenuating and stress migration and/or resistivity | |
| TWI479599B (en) | Semiconductor device manufacturing method and semiconductor device | |
| CN108767102B (en) | Light emitting diode chip and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150925 Address after: Daitou town of Liyang City Ferry Street 213311 Jiangsu city of Changzhou province 8-2 No. 7 Patentee after: Liyang Chang Technology Transfer Center Co.,Ltd. Address before: Gehu Lake Road Wujin District 213164 Jiangsu city of Changzhou province No. 1 Patentee before: Changzhou University |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20170208 Address after: Gehu Lake Road Wujin District 213164 Jiangsu city of Changzhou province No. 1 Patentee after: CHANGZHOU University Address before: Daitou town of Liyang City Ferry Street 213311 Jiangsu city of Changzhou province 8-2 No. 7 Patentee before: Liyang Chang Technology Transfer Center Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131030 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |