CN102176356A - Platinum resistor chip and manufacture method thereof - Google Patents
Platinum resistor chip and manufacture method thereof Download PDFInfo
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- CN102176356A CN102176356A CN 201110048220 CN201110048220A CN102176356A CN 102176356 A CN102176356 A CN 102176356A CN 201110048220 CN201110048220 CN 201110048220 CN 201110048220 A CN201110048220 A CN 201110048220A CN 102176356 A CN102176356 A CN 102176356A
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- platinum
- resistance
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- wire
- ceramic substrate
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Abstract
The invention discloses a platinum resistor chip and a manufacture method thereof. The platinum resistor chip comprises a platinum wire resistor deposited on a ceramic substrate 3, resistor wires which are cut into rectangular zigzags are arranged on the platinum wire resistor, the platinum wire resistor is provided with lead bonding points, one end of each lead bonding point is connected with the resistor wires, and the other end of the lead bonding point is connected with a platinum-nickel-plated wire lead. The preparation method comprises the following steps of: weighing pure metal platinum powder according to mass ratio and mixing with hydrofluoric acid, stirring to obtain pure metal platinum slurry; spraying the pure metal platinum slurry onto the ceramic substrate by using a laser sputtering process; cutting the platinum metal layer into fine wires by using laser; and adjusting the resistance value of the fine wires by using laser, welding two ends of the fine wires to platinum-nickel-plated wires to be used as leads, integrating with the ceramic substrate into a monolithic structure which is a pt1000 platinum resistor chip. The platinum resistor chip has simple structure, low cost, high production efficiency, small resistance dispersibility, temperature testing range of -50 DEG C-450 DEG C and good high-temperature resistance, particularly, the platinum resistor chip can work at 300 DEG C for a long term. The preparation method can be widely used for preparing different specifications of resistance chips made of different metal materials.
Description
Technical field
The present invention relates to chip and preparation method, be specifically related to a kind of platinum resistance chip and platinum resistance chip production method.
Background technology
Ptl000 platinum resistance chip is the core parts of calorimeter pairing platinum resistance temperature sensor.At present domesticly still can not produce, most of producer that produces the pairing platinum resistance temperature sensor all needs to Japan or German import, so that country will spend a large amount of foreign exchanges every year, and import price is also high, traditional platinum resistance chip production technology be mode that high purity metal platinum filament is twined by hand on mica or quartz glass skeleton, with electric resistance welding that filament and wire bonds is firm then, the outside is packaged glass or quartz socket tube again, conventional art exists production efficiency low, cost height, R
0(chip 0 ℃ time resistance value) is dispersed big, is not suitable for the defective of large-scale production.
Summary of the invention
The purpose of this invention is to provide a kind of simple in structurely, cost is low, the production efficiency height, and the resistance value dispersiveness in the time of 0 ℃ is little, is fit to a kind of platinum resistance chip of large-scale production in batches.
Another object of the present invention provides a kind of platinum resistance chip production method.
In order to overcome the deficiency of conventional art, technical scheme of the present invention is to solve like this: a kind of platinum resistance chip is included in and deposits platinum filament resistive element 2 on the ceramic substrate 3, describedly on platinum filament resistive element 2, cut into rectangular zigzag resistance filament 1, described resistive element 2 is provided with wire bonds point 4, wire bonds is put 4 one ends and is connected with resistance filament 1, the other end is connected with platinum plating nickel wire lead-in wire, the length of described ceramic substrate 3 is 3.2 ± 0.1mm, wide is 2.1 ± 0.1mm, thick is 1.0 ± 0.1mm, platinum plating nickel wire wire length is 10 ± 1mm, diameter wire φ 0.2 ± 0.02mm.
A kind of platinum resistance chip production method, undertaken by following step:
1), take by weighing 50%～55% simple metal platinum powder and 45%～50% hydrofluoric acid, makes simple metal platinum slurry through fully stirring by mass ratio;
2), employing laser splash technology to ceramic substrate, forms the thick pure platinum thin layer of 1.5mm～2mm with the splash of simple metal platinum slurry;
3), with laser cutting parameter platinum layer on the ceramic substrate being cut into line thickness is 0.08mm～0.13 mm filament; Its filament spacing distance is 0.08mm～0.13 mm;
4), adopt laser cutting parameter to adjust the resistance of filament, the density by laser cutting control filament is to revise resistance R
0, resistance R
0Value is 1000 ohm ± 0.06 ohm, and resistance value adopts the bridge measurement method to measure;
5), with modified R
0The two ends welding platinum plating nickel wire of the ceramic substrate filament after the resistance value is sintered on substrate in the sintering furnace of 1100 ℃～1500 ℃ of temperature simultaneously as lead-in wire, and film surface covers the pottery with sintering, promptly is prepared into ptl000 platinum resistance chip.
So the difference of the present invention and conventional art essence with simple metal platinum slurry with the laser spray method with the metal platinum splash to ceramic substrate, with laser cutting parameter platinum layer on the ceramic substrate is cut into lines as resistance wire, resistance wire two ends welding platinum plating nickel wire is as lead-in wire, and carry out sintering, make ptl000 platinum resistance chip.And the production technology of traditional platinum resistance temperature sensor be mode that high purity metal platinum filament is twined by hand on mica or quartz glass skeleton, with electric resistance welding that filament and wire bonds is firm then, outside packaged glass or quartz socket tube again forms.Obviously the present invention have simple in structure, with low cost, production efficiency is high, the resistance value R in the time of 0 ℃
0Dispersed little, long-time stability are good, and vibration proof and protecting against shock are good, are fit to advantages such as large-scale production in batches, extensively can generally be used to make the resistance chip of various different sizes and various different metal materials.
Technical parameter of the present invention is:
1, properties of product meet IEC751-1995 and JIS1604 standard;
2, temperature-measuring range :-50 ℃～450 ℃;
3, nominal pressure: 0.6mpa;
4, overall dimension: 3, the length * wide * height of 2mm * 2.lmm * l.0mm();
5, precision and grade
The A level: permissible error (unit: ℃) ± (0.15+0.002t);
The B level: permissible error (unit: ℃) ± (0.30+0.005t);
Wherein t is dut temperature value (unit: ℃)
6, R
0Resistance value high conformity, deviation are little, can both reach the precision of A level ± 0.06 W more than 95%;
Accuracy class:
A level: 1000 ± 0.06W
B level: 1000 ± 0.12W
7, heat-resisting quantity: but long-term work at 300 ℃, and stable performance;
8, have good vibration proof and protecting against shock
The anti-vibration grade:〉40g acceleration (10～2000HZ);
9, has good insulation performance
Insulation resistance: in the time of 20 ℃〉100 M; In the time of 500 ℃〉2 M;
10, long-time stability:＜0.1 ℃ (250 hours/100 ℃);
11, resistance temperature/coefficient: Rl00/R
0=1.3851;
R wherein
0Resistance during for 0 ℃ of platinum resistance chip, resistance when Rl00 is 100 ℃ of platinum resistance chips.
Description of drawings
Fig. 1 is a ceramic substrate filament structure for amplifying schematic diagram of the present invention.
Embodiment
Accompanying drawing is embodiments of the invention.
Below in conjunction with drawings and Examples summary of the invention is described further:
With reference to shown in Figure 1, a kind of platinum resistance chip deposits platinum filament resistive element 2 on ceramic substrate 3, describedly cut into rectangular zigzag resistance filament 1 on platinum filament resistive element 2, described resistive element 2 is provided with wire bonds point 4, and wire bonds is put 4 one ends and is connected with resistance filament 1, the other end is connected with platinum plating nickel wire lead-in wire, the length of described ceramic substrate 3 is 3.2 ± 0.1mm, and wide is 2.1 ± 0.1mm, and thick is 1.0 ± 0.1mm, platinum plating nickel wire wire length is 10 ± 1mm, diameter wire φ 0.2 ± 0.02mm.
A kind of platinum resistance chip production method, undertaken by following step:
1), take by weighing 50%～55% simple metal platinum powder and 45%～50% hydrofluoric acid, makes simple metal platinum slurry through fully stirring by mass ratio;
2), adopt laser splash technology with the splash of simple metal platinum slurry to ceramic substrate, to form the thick pure platinum thin layer of 1.5mm～2mm;
3), with laser cutting parameter platinum layer on the ceramic substrate being cut into line thickness is 0.08mm～0.13 mm filament; Its filament spacing distance is 0.08mm～0.13 mm;
4), adopt laser cutting parameter to adjust the resistance of filament, the density by laser cutting control filament is to revise resistance R 0, resistance R
0Value is 1000 ohm ± 0.06 ohm, and resistance value adopts the bridge measurement method to measure;
5), with modified R
0The two ends welding platinum plating nickel wire of the ceramic substrate filament after the resistance value is sintered on substrate in the sintering furnace of 1100 ℃～1500 ℃ of temperature simultaneously as lead-in wire, and film surface covers the pottery with sintering, promptly is prepared into ptl000 platinum resistance chip.
A kind of platinum resistance chip production method, undertaken by following step:
1), take by weighing 52%～54% simple metal platinum powder and 46%～48% hydrofluoric acid, makes simple metal platinum slurry through fully stirring by mass ratio;
2), employing laser splash technology to ceramic substrate, forms the thick pure platinum thin layer of 1.5mm～2mm with the splash of simple metal platinum slurry;
3), with laser cutting parameter platinum layer on the ceramic substrate being cut into line thickness is 0.09mm～0.12 mm filament; Its filament spacing distance is 0.09mm～0.12 mm;
4), adopt laser cutting parameter to adjust the resistance of filament, the density by laser cutting control filament is to revise resistance R
0, resistance R
0Value is 1000 ohm ± 0.06 ohm, and resistance value adopts the bridge measurement method to measure;
5), with modified R
0The two ends welding platinum plating nickel wire of the ceramic substrate filament after the resistance value is sintered on substrate in the sintering furnace of 1150 ℃～1300 ℃ of temperature simultaneously as lead-in wire, and film surface covers the pottery with sintering, promptly is prepared into ptl000 platinum resistance chip.
A kind of platinum resistance chip production method, undertaken by following step:
1), take by weighing 53% simple metal platinum powder and 47% hydrofluoric acid, makes simple metal platinum slurry through fully stirring by mass ratio;
2), employing laser splash technology to ceramic substrate, forms the thick pure platinum thin layer of 2mm with the splash of simple metal platinum slurry;
3), with laser cutting parameter platinum layer on the ceramic substrate being cut into line thickness is the 0.1mm filament; Its filament spacing distance is 0.1mm;
4), adopt laser cutting parameter to adjust the resistance of filament, the density by laser cutting control filament is to revise resistance R
0, resistance R
0Value is 1000 ohm ± 0.06 ohm, and resistance value adopts the bridge measurement method to measure;
5), with modified R
0The two ends welding platinum plating nickel wire of the ceramic substrate filament after the resistance value is sintered on substrate in the sintering furnace of 1200 ℃ of temperature simultaneously as lead-in wire, and film surface covers the pottery with sintering, promptly is prepared into ptl000 platinum resistance chip.
Embodiment 4
A kind of platinum resistance chip production method, undertaken by following step:
1), take by weighing 50% simple metal platinum powder and 50% hydrofluoric acid, makes simple metal platinum slurry through fully stirring by mass ratio;
2), employing laser splash technology to ceramic substrate, forms the thick pure platinum thin layer of 2mm with the splash of simple metal platinum slurry;
3), with laser cutting parameter platinum layer on the ceramic substrate being cut into line thickness is the 0.1mm filament; Its filament spacing distance is 0.1mm;
4), adopt laser cutting parameter to adjust the resistance of filament, the density by laser cutting control filament is to revise resistance R
0, resistance R
0Value is 1000 ohm ± 0.06 ohm, and resistance value adopts the bridge measurement method to measure;
5), with modified R
0The two ends welding platinum plating nickel wire of the ceramic substrate filament after the resistance value is sintered on substrate in the sintering furnace of 1200 ℃ of temperature simultaneously as lead-in wire, and film surface covers the pottery with sintering, promptly is prepared into ptl000 platinum resistance chip.
In sum; utilize technical scheme of the present invention except making the resistance chip with simple metal platinum; also available other simple metal materials and hydrofluoric acid are mixed and made into the simple metal slurry; use step 2 again)～method of step 5) makes the resistance chip of various different sizes and various different metal materials; if adopt technical scheme of the present invention to make the resistance chip of various different sizes and the manufacturing of various different metal materials, belong to protection scope of the present invention equally.
Claims (3)
1. platinum resistance chip, it is characterized in that this platinum resistance chip is included in deposits platinum filament resistive element 2 on the ceramic substrate 3, describedly on platinum filament resistive element 2, cut into rectangular zigzag resistance filament 1, described resistive element 2 is provided with wire bonds point 4, wire bonds is put 4 one ends and is connected with resistance filament 1, the other end is connected with platinum plating nickel wire lead-in wire, the length of described ceramic substrate 3 is 3.2 ± 0.1mm, wide is 2.1 ± 0.1mm, thick is 1.0 ± 0.1mm, platinum plating nickel wire wire length is 10 ± 1mm, diameter wire φ 0.2 ± 0.02mm.
2. described platinum resistance chip production method of claim 1, its feature is being undertaken by following step:
1), take by weighing 50%～55% simple metal platinum powder and 45%～50% hydrofluoric acid, makes simple metal platinum slurry through fully stirring by mass ratio;
2), employing laser splash technology to ceramic substrate, forms the thick pure platinum thin layer of 1.5mm～2mm with the splash of simple metal platinum slurry;
3), with laser cutting parameter platinum layer on the ceramic substrate being cut into line thickness is 0.08mm～0.13 mm filament; Its filament spacing distance is the corresponding construction of 0.08mm～0.13 mm;
4), adopt laser cutting parameter to adjust the resistance of filament, the density by laser cutting control filament is to revise resistance R
0
, resistance R
0Value is 1000 ohm ± 0.06 ohm, and resistance value adopts the bridge measurement method to measure;
5), will revise resistance R
0The two ends welding platinum plating nickel wire of the ceramic substrate filament after the value is sintered on substrate in the sintering furnace of 1100 ℃～1500 ℃ of temperature simultaneously as lead-in wire, and film surface covers the pottery with sintering, promptly is prepared into ptl000 platinum resistance chip.
3. a kind of platinum resistance chip production method according to claim 2, its feature is undertaken by following step:
1), take by weighing 52%～54% simple metal platinum powder and 46%～48% hydrofluoric acid, makes simple metal platinum slurry through fully stirring by mass ratio;
2), employing laser splash technology to ceramic substrate, forms the thick pure platinum thin layer of 1.5mm～2mm with the splash of simple metal platinum slurry;
3), with laser cutting parameter platinum layer on the ceramic substrate being cut into line thickness is 0.09mm～0.12 mm filament; Its filament spacing distance is 0.09mm～0.12 mm;
4), adopt laser cutting parameter to adjust the resistance of filament, the density by laser cutting control filament is to revise resistance R
0
, resistance R
0Value is 1000 ohm ± 0.06 ohm, and resistance value adopts the bridge measurement method to measure;
5), with modified R
0The two ends welding platinum plating nickel wire of the ceramic substrate filament after the resistance value is sintered on substrate in the sintering furnace of 1150 ℃～1300 ℃ of temperature simultaneously as lead-in wire, and film surface covers the pottery with sintering, promptly is prepared into ptl000 platinum resistance chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110048220 CN102176356A (en) | 2011-03-01 | 2011-03-01 | Platinum resistor chip and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110048220 CN102176356A (en) | 2011-03-01 | 2011-03-01 | Platinum resistor chip and manufacture method thereof |
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|---|---|
| CN102176356A true CN102176356A (en) | 2011-09-07 |
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ID=44519517
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| CN 201110048220 Pending CN102176356A (en) | 2011-03-01 | 2011-03-01 | Platinum resistor chip and manufacture method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104374687A (en) * | 2014-11-07 | 2015-02-25 | 国家电网公司 | Insulation paper aging test device for power transformer |
| CN104392809A (en) * | 2014-11-28 | 2015-03-04 | 中投仙能科技（苏州）有限公司 | Balancing resistor for lithium cell protector |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1262516A (en) * | 1999-01-26 | 2000-08-09 | 株式会社村田制作所 | Resistance for high-voltage and its method for regulating resistance |
| CN1409329A (en) * | 2001-09-28 | 2003-04-09 | 石塚电子株式会社 | Thin film thermosensitive resistor and tis resistance valve regulating method |
| CN1552080A (en) * | 2001-03-02 | 2004-12-01 | Bcԫ���ع�����˾ | Method for the production of thin layer chip resistors |
| CN1641801A (en) * | 2004-01-09 | 2005-07-20 | 国巨股份有限公司 | Method for manufacturing surface-bonded metal foil chip resistor |
| CN2891234Y (en) * | 2005-12-31 | 2007-04-18 | 陈富强 | Surface adhered chip resistor |
| CN101819836A (en) * | 2009-11-30 | 2010-09-01 | 东莞市长凌电子材料有限公司 | Bar-shaped resistance |
-
2011
- 2011-03-01 CN CN 201110048220 patent/CN102176356A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1262516A (en) * | 1999-01-26 | 2000-08-09 | 株式会社村田制作所 | Resistance for high-voltage and its method for regulating resistance |
| CN1552080A (en) * | 2001-03-02 | 2004-12-01 | Bcԫ���ع�����˾ | Method for the production of thin layer chip resistors |
| CN1409329A (en) * | 2001-09-28 | 2003-04-09 | 石塚电子株式会社 | Thin film thermosensitive resistor and tis resistance valve regulating method |
| CN1641801A (en) * | 2004-01-09 | 2005-07-20 | 国巨股份有限公司 | Method for manufacturing surface-bonded metal foil chip resistor |
| CN2891234Y (en) * | 2005-12-31 | 2007-04-18 | 陈富强 | Surface adhered chip resistor |
| CN101819836A (en) * | 2009-11-30 | 2010-09-01 | 东莞市长凌电子材料有限公司 | Bar-shaped resistance |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104374687A (en) * | 2014-11-07 | 2015-02-25 | 国家电网公司 | Insulation paper aging test device for power transformer |
| CN104392809A (en) * | 2014-11-28 | 2015-03-04 | 中投仙能科技（苏州）有限公司 | Balancing resistor for lithium cell protector |
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Application publication date: 20110907 |