CN102539004B - Method of manufacturing temperature sensor - Google Patents
Method of manufacturing temperature sensor Download PDFInfo
- Publication number
- CN102539004B CN102539004B CN 201110439829 CN201110439829A CN102539004B CN 102539004 B CN102539004 B CN 102539004B CN 201110439829 CN201110439829 CN 201110439829 CN 201110439829 A CN201110439829 A CN 201110439829A CN 102539004 B CN102539004 B CN 102539004B
- Authority
- CN
- China
- Prior art keywords
- annealing
- product
- time
- temperature sensor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a method of manufacturing a temperature sensor, which is characterized by including steps of substrate making, deposition, sputtering, primary annealing, primary photoetching, metallization, secondary annealing, secondary photoetching, testing, regulating, scribing, cutting, selecting, lead bonding and packaging. By the method using the silicon wafer or sapphire substrate and respectively sputtering a platinum film resistor and a gold lead layer, the temperature sensor is easy to manufacture. In addition, measuring precision and flexibility of the temperature sensor are improved. The temperature sensor has the advantages of simple structure, safety, reliability, accurate measurement and the like.
Description
Technical field
The invention belongs to the electronic component technology field, specifically, is a kind of method for making of temperature sensor.
Background technology
Temperature sensor is the core of temperature measuring instrument, various in style, according to sensor material and electron component characteristic, is divided into thermal resistance and thermopair two classes.Wherein thermal resistance is the most frequently used a kind of Temperature Detector of middle low-temperature space, and its principal feature is that measuring accuracy is high, stable performance.Wherein the measuring accuracy of platinum resistance thermometer sensor, is the highest, and it not only is widely used in industrial thermometric, and is made into the station meter of standard.The temperature-measurement principle of thermal resistance is based on the characteristic that conductor or semi-conductive resistance value change along with the variation of temperature, thermal resistance is mostly made by the simple metal material, what application was maximum at present is platinum and copper, has started now to adopt the materials such as nickel, manganese and rhodium to manufacture thermal resistance.Thermal resistance need to be delivered to resistance signal on Computer Control Unit or other secondary instrument by lead-in wire usually, thereby realizes the measurement to temperature.Existing temperature sensor mostly is the platinum temperature sensor; this temperature sensor has applied a platinum film resistor on a ceramic substrate; ceramic substrate is comprised of aluminium oxide usually; in the zone that forms platinum film resistor; be provided with one deck protection glaze on the surface of ceramic substrate; wherein platinum film resistor usually is configured wavy platinum layer and has by way of parenthesis joint face, and this joint face is connected to form conduction with wire and is connected to obtain sensor signal, and is provided with a glaze layer for the fixed terminal wire.The aging stability of the temperature sensor of the above-mentioned type can not be guaranteed; because the protection glaze used is electrochemically decomposed during by required metering circuit under high-temperature condition; the material transition that occurred in the case produce harmful effect to the characteristic of platinum, with induced damage resistive sensor stability and damaged thus measuring accuracy.
Summary of the invention
The purpose of this invention is to provide that a kind of can to produce measuring accuracy high, the method for making of the temperature sensing of stable performance.
For achieving the above object, scheme of the present invention is as follows:
A kind of method for making of temperature sensor, is characterized in that comprising the steps:
1) make substrate: select silicon chip or sapphire, then on this silicon chip or sapphire, engrave grid, thereby make substrate, do substrate with existing selection pottery and compare, select silicon chip or sapphire comparatively easy, manufacture difficulty is low simultaneously;
2) substrate deposit: by step 1) obtained cleans up with acid solution, then make substrate at the substrate surface deposition one deck insulating material that is carved with grid, on substrate, depositing insulating layer is during for fear of next step sputter platinum, because silicon chip is semiconductor, if there is no insulation course, platinum layer will conduct electricity, thereby affects the measurement effect of temperature sensor;
3) sputter: adopt the mode of magnetron sputtering that platinum is sputtered to step 2 on magnetic control platform) on prepared substrate; Magnetron sputtering is in order to carry out high-speed sputtering under infrabar, must effectively improve the ionization level of gas, by on the target cathode surface, introducing magnetic field, utilize magnetic field to improve plasma density to increase the method for sputtering raste to the constraint of charged particle, with existing evaporation mode, compare, magnetron sputtering utilizes externally-applied magnetic field to catch electronics, the motion path of prolongation and bound electron, do high ionization level, increase plated film speed;
4) annealing for the first time: by step 3) resulting product is placed in annealing furnace and is annealed, and makes platinum aging, thereby improves the stability of platinum;
5) photoetching for the first time: according to designing requirement, by step 4) resulting product carries out photoetching, and the part needed is stayed, and unwanted part is removed, and to being splashed to on-chip platinum layer, carries out photoetching, makes on substrate to present several platinum film resistors;
6) metallization: in step 5) product that obtains at lead-in wire place magnetron sputtering layer of gold, be connected to obtain sensor signal thereby make this gold layer and wire be connected to form and conduct electricity;
The gold layer of the product 7) annealing for the second time: by step 6) obtained is placed in annealing furnace is annealed, and makes gold aging, thereby improves golden stability;
8) photoetching for the second time: to step 7) the gold layer of resulting product carries out photoetching, and the part needed is stayed, and unwanted part is removed, even be positioned at the structure of on-chip platinum layer and gold layer, meets designing requirement;
9) product test: by step 8) obtained is tested according to design;
10) trimming: adopt the laser trimming instrument to step 9) product that obtains trimmed, and makes it reach the precision of design;
11) scribing, cut and choose: according to design to step 10) product that obtains carries out scribing, it changed into to several unit, and the unit marked is cut and chosen, in each unit, the two ends of platinum layer are connected with respectively the gold layer;
12) bonding wire: adopt bonder to step 11) resulting product carries out the line connection, will go between and connect on the gold layer;
13) product encapsulation: adopt wax and shell by step 12) obtained is encapsulated, thereby obtains finished product.
As preferably: annealing for the first time step 4): by step 3) resulting product is put into the annealing furnace that is full of inert gas, and being heated to temperature is to be cooled to furnace temperature after 400 ℃～500 ℃, and annealing time is half an hour.
As preferably: annealing for the second time step 7): by step 6) resulting product is put into the annealing furnace that is full of inert gas, and being heated to temperature is to be cooled to furnace temperature after 400 ℃～500 ℃, and annealing time is half an hour.
Remarkable result of the present invention is: the present invention adopts silicon chip or Sapphire Substrate and difference sputter platinum film resistor and gold wire layer, thereby makes the present invention easily make, and has improved measuring accuracy and the sensitivity of temperature sensor simultaneously; There are the characteristics such as simple in structure, safe and reliable, accurate measurement.
The accompanying drawing explanation
Fig. 1 is process chart of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
A kind of method for making of temperature sensor, is characterized in that comprising the steps:
1) make substrate: select silicon chip or sapphire, then on this silicon chip or sapphire, engrave grid, thereby make substrate, do substrate with existing selection pottery and compare, select silicon chip or sapphire comparatively easy, manufacture difficulty is low simultaneously;
2) substrate deposit: by step 1) obtained cleans up with acid solution, then make substrate at the substrate surface deposition one deck insulating material that is carved with grid, on substrate, depositing insulating layer is during for fear of next step sputter platinum, because silicon chip is semiconductor, if there is no insulation course, platinum layer will conduct electricity, thereby affects the measurement effect of temperature sensor;
3) sputter: adopt the mode of magnetron sputtering that platinum is sputtered to step 2 on magnetic control platform) on prepared substrate; Magnetron sputtering is in order to carry out high-speed sputtering under infrabar, must effectively improve the ionization level of gas, by on the target cathode surface, introducing magnetic field, utilize magnetic field to improve plasma density to increase the method for sputtering raste to the constraint of charged particle, with existing evaporation mode, compare, magnetron sputtering utilizes externally-applied magnetic field to catch electronics, the motion path of prolongation and bound electron, do high ionization level, increase plated film speed;
4) annealing for the first time: by step 3) resulting product is placed in annealing furnace and is annealed, make platinum aging, thereby improve the stability of platinum, being by step 3) resulting product puts into the annealing furnace that is full of inert gas, being heated to temperature is to be cooled to furnace temperature after 400 ℃～500 ℃, and annealing time is half an hour;
5) photoetching for the first time: according to designing requirement, by step 4) resulting product carries out photoetching, and the part needed is stayed, and unwanted part is removed, and to being splashed to on-chip platinum layer, carries out photoetching, makes on substrate to present several platinum film resistors;
6) metallization: in step 5) product that obtains at lead-in wire place magnetron sputtering layer of gold, be connected to obtain sensor signal thereby make this gold layer and wire be connected to form and conduct electricity;
The gold layer of the product 7) annealing for the second time: by step 6) obtained is placed in annealing furnace is annealed, make gold aging, thereby improve golden stability, being by step 6) resulting product puts into the annealing furnace that is full of inert gas, being heated to temperature is to be cooled to furnace temperature after 400 ℃～500 ℃, annealing time is half an hour, and as long as the annealing temperature of annealing, lower than the temperature of annealing for the first time, can be good at guaranteeing the good result of annealing so for the second time;
8) photoetching for the second time: to step 7) the gold layer of resulting product carries out photoetching, and the part needed is stayed, and unwanted part is removed, even be positioned at the structure of on-chip platinum layer and gold layer, meets designing requirement;
9) product test: by step 8) obtained is tested according to design;
10) trimming: adopt the laser trimming instrument to step 9) product that obtains trimmed, and makes it reach the precision of design;
11) scribing, cut and choose: according to design to step 10) product that obtains carries out scribing, it changed into to several unit, and the unit marked is cut and chosen, in each unit, the two ends of platinum layer are connected with respectively the gold layer;
12) bonding wire: adopt bonder to step 11) resulting product carries out the line connection, will go between and connect on the gold layer;
13) product encapsulation: adopt wax and shell by step 12) obtained is encapsulated, thereby obtains finished product.
The foregoing is only preferred embodiment of the present invention, not take the present invention as restriction, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (3)
1. the method for making of a temperature sensor, is characterized in that comprising the steps:
1) make substrate: select silicon chip or sapphire, then on this silicon chip or sapphire, engrave grid, thereby make substrate;
2) substrate deposit: by step 1) obtained cleans up with acid solution, then at the substrate surface deposition one deck insulating material that is carved with grid, makes substrate;
3) sputter: adopt the mode of magnetron sputtering that platinum is sputtered to step 2 on magnetic control platform) on prepared substrate;
4) annealing for the first time: by step 3) resulting product is placed in annealing furnace and is annealed, and makes platinum aging, thereby improves the stability of platinum;
5) photoetching for the first time: according to designing requirement, by step 4) resulting product carries out photoetching, and the part needed is stayed, and unwanted part is removed;
6) metallization: in the step 5) product that obtains at lead-in wire place magnetron sputtering layer of gold;
The gold layer of the product 7) annealing for the second time: by step 6) obtained is placed in annealing furnace is annealed, and makes gold aging, thereby improves golden stability;
8) photoetching for the second time: to step 7) the gold layer of resulting product carries out photoetching, and the part needed is stayed, and unwanted part is removed;
9) product test: by step 8) obtained is tested according to design;
10) trimming: adopt the laser trimming instrument to step 9) product that obtains trimmed, and makes it reach the precision of design;
11) scribing, cut and choose: according to design to step 10) product that obtains carries out scribing, it changed into to several unit, and the unit marked is cut and chosen, in each unit, the two ends of platinum layer are connected with respectively the gold layer;
12) bonding wire: adopt bonder to step 11) resulting product carries out the line connection, will go between and connect on the gold layer;
13) product encapsulation: adopt wax and shell by step 12) obtained is encapsulated, thereby obtains finished product.
2. the method for making of a kind of temperature sensor according to claim 1, it is characterized in that: step 4) in annealing for the first time: by step 3) resulting product puts into the annealing furnace that is full of inert gas, being heated to temperature is to be cooled to furnace temperature after 400 ℃～500 ℃, and annealing time is half an hour.
3. the method for making of a kind of temperature sensor according to claim 1, it is characterized in that: step 7) in annealing for the second time: by step 6) resulting product puts into the annealing furnace that is full of inert gas, being heated to temperature is to be cooled to furnace temperature after 400 ℃～500 ℃, and annealing time is half an hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110439829 CN102539004B (en) | 2011-12-23 | 2011-12-23 | Method of manufacturing temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110439829 CN102539004B (en) | 2011-12-23 | 2011-12-23 | Method of manufacturing temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102539004A CN102539004A (en) | 2012-07-04 |
| CN102539004B true CN102539004B (en) | 2013-12-25 |
Family
ID=46346463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110439829 Active CN102539004B (en) | 2011-12-23 | 2011-12-23 | Method of manufacturing temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102539004B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102865938B (en) * | 2012-09-07 | 2014-02-19 | 清华大学 | Thermocouple and forming method of thermocouple |
| CN103776558B (en) * | 2013-12-09 | 2017-01-11 | 中北大学 | transient temperature sensor |
| CN104458046A (en) * | 2014-12-10 | 2015-03-25 | 中国航天空气动力技术研究院 | Platinum film resistor manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1083609A1 (en) * | 1999-09-09 | 2001-03-14 | Metrodyne Microsystem Corp. | Method of fabricating thermoelectric sensor |
| CN101308110A (en) * | 2008-07-11 | 2008-11-19 | 中国电子科技集团公司第四十九研究所 | Low-power consumption double module integrated humidity sensitive chip with heating function and its manufacture method |
| CN101324472A (en) * | 2008-07-14 | 2008-12-17 | 大连理工大学 | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor |
-
2011
- 2011-12-23 CN CN 201110439829 patent/CN102539004B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1083609A1 (en) * | 1999-09-09 | 2001-03-14 | Metrodyne Microsystem Corp. | Method of fabricating thermoelectric sensor |
| CN101308110A (en) * | 2008-07-11 | 2008-11-19 | 中国电子科技集团公司第四十九研究所 | Low-power consumption double module integrated humidity sensitive chip with heating function and its manufacture method |
| CN101324472A (en) * | 2008-07-14 | 2008-12-17 | 大连理工大学 | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102539004A (en) | 2012-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106782951B (en) | The resistance trimming method of thin-film thermistor and the manufacturing method of diaphragm type thermistor | |
| EP2529085B1 (en) | Turbine component instrumented to provide thermal measurements | |
| US8033722B2 (en) | Thermocouple for gas turbine environments | |
| CN102826602B (en) | Thermistor material, temperature sensor, and manufacturing method thereof | |
| WO2007115257A2 (en) | Thermocouples | |
| KR20130065705A (en) | Electric element | |
| CN103021605B (en) | Chip type platinum thermal resistor manufacture method | |
| CN102419217B (en) | Metal film micron-scale thermocouple device | |
| CN102539004B (en) | Method of manufacturing temperature sensor | |
| CN102496431A (en) | Manufacturing method of platinum film resistor chip for temperature sensor | |
| US9279673B2 (en) | Semiconductor device and method of calibrating warpage testing system to accurately measure semiconductor package warpage | |
| RU2755344C1 (en) | Method for obtaining thick-film structures for thermal power generators | |
| CN111609951B (en) | Conformal preparation method of thick film heat flow meter and product | |
| CN207663866U (en) | A kind of laminated film resistance of low resistance temperature coefficient | |
| KR20140086381A (en) | Heat resistant and electrically insulating compensating lead wire for thermocouple of electric furnace | |
| Courts et al. | Stability of Cernox™ Resistance Temperature Sensors | |
| Wang et al. | Design and Batch Preparation of a High-Performance Temperature Sensor for New Energy Vehicles Using Platinum Film | |
| CN219303681U (en) | Infrared detector integrated with temperature monitoring structure | |
| CN218730182U (en) | Resistance element for flowmeter | |
| CN107993782A (en) | A kind of laminated film resistance of low resistance temperature coefficient and preparation method thereof | |
| KR20230137751A (en) | Composite cable composed of compensating wire for thermocouple and tin-plated annealed copper wire | |
| CN116380274A (en) | Thin film resistor type temperature sensor of in-situ integrated micro thermoelectric device and manufacturing method thereof | |
| CN116718283A (en) | Temperature sensor based on thermal resistance characteristics of niobium trichloride thin film | |
| JPS58158957A (en) | Controlling method for ceramic substrate temperature | |
| CN116314420A (en) | Infrared detector of integrated temperature monitoring structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |