CN102176183A - Band-gap reference circuit of self-cancellation diode offset voltage - Google Patents
Band-gap reference circuit of self-cancellation diode offset voltage Download PDFInfo
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- CN102176183A CN102176183A CN2011100589578A CN201110058957A CN102176183A CN 102176183 A CN102176183 A CN 102176183A CN 2011100589578 A CN2011100589578 A CN 2011100589578A CN 201110058957 A CN201110058957 A CN 201110058957A CN 102176183 A CN102176183 A CN 102176183A
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- offset voltage
- gap reference
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Abstract
The invention discloses a band-gap reference circuit of a self-cancellation diode offset voltage, which comprises a starting circuit and a band-gap generating circuit, and is characterized in that the band-gap reference circuit comprises an alternation logic circuit connected with the band-gap generating circuit; and the alternative logic circuit can enable the diode in the band-gap generating circuit to alternate the connection positions at every other period. The circuit can automatically cancel the diode offset voltage to realize the low offset band-gap reference, reduce the testing cost, and reduce the area of the band-gap reference circuit, thereby reducing the chip area and chip cost, and improving the cost performance of the product; and the band-gap reference circuit has a wide application prospect.
Description
Technical field
The present invention relates to a kind of band-gap reference (bandgap) circuit, belong to technical field of integrated circuits.
Background technology
The Bandgap circuit is widely used in the integrated circuit at present, and the reference voltage or the electric current that are not subjected to temperature, voltage, technogenic influence are provided.But there is the excessive problem of offset voltage in the bandgap circuit at present, all needs to adopt special correcting circuit that it is adjusted usually, thereby has increased testing cost.In order to reduce imbalance, another kind of at present the method for normal employing be to increase circuit area, but can increase the cost of chip like this.Traditional bandgap circuit as shown in Figure 2, produce circuit array comprising start-up circuit startup, band gap, the diode that band gap produces in the circuit is one of main source of bandgap circuit generation offset voltage, therefore, eliminating the diode offset voltage is one of important channel that solves bandgap circuit offset voltage problem.
Summary of the invention
Technical matters to be solved by this invention provides a kind of bandgap circuit, can eliminate the diode offset voltage automatically, realizes the low imbalance of bandgap circuit, and can reduce the area of bandgap circuit, and does not increase testing cost.
For solving the problems of the technologies described above, the invention provides a kind of band-gap reference circuit of eliminating the diode offset voltage certainly and comprise that start-up circuit, band gap produce circuit, it is characterized in that, comprise the logical circuit by turns that is connected with described band gap generation circuit, rotate logical circuit every one-period and can make the diode in the described band gap generation circuit rotate link position.
Described band gap produces circuit and comprises a plurality of diode connected in parallel.
Described by turns logical circuit just is connected to the position of left side diode with each diode every one-period, and leftmost diode then is connected to the position of rightmost diode.
Being included as diode to be rotated provides the impact damper of initial voltage.
The output terminal of described impact damper is connected with the diode that described band gap produces in the circuit.
Comprise 2 impact dampers.
The beneficial effect that the present invention reached: circuit of the present invention can be eliminated the diode offset voltage automatically, thereby realized low imbalance bandgap, reduce testing cost, and reduced the area of bandgap circuit, thereby can reduce chip area, reduce chip cost, improve cost performance of product, have broad application prospects.
Description of drawings
Fig. 1 is of the present invention from the band-gap reference circuit figure that eliminates the diode offset voltage;
Fig. 2 is band-gap reference circuit figure of the prior art.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.Following examples only are used for technical scheme of the present invention more clearly is described, and can not limit protection scope of the present invention with this.
As shown in Figure 1, be a kind of preferred implementation of the band-gap reference circuit of eliminating the diode offset voltage certainly of invention, this circuit can be eliminated the offset voltage of diode automatically.On traditional bandgap circuit base, increased a logical circuit select logic by turns.The effect of logical circuit select logic is that each diode that band gap produces among the circuit array is rotated link position by turns, promptly just each diode is connected to the position of its left side diode every one-period, leftmost diode then is connected to the position of rightmost diode, comes (counterclockwise) to realize alternate operation so successively left.The influence of diode imbalance to the bandgap circuit can be eliminated in the position of diode by turns.
Those of ordinary skill in the art can recognize that alternating mode can also adopt identical with the present embodiment or similar principle, but the alternating mode that is not limited to mention in the present embodiment.
Those of ordinary skill in the art can recognize that the diode of mentioning in the present embodiment is the device that can play diode action, is not limited to diode, can adopt the connected mode of the triode shown in circuit diagram in the present embodiment, or adopts other devices.
Also comprise 2 impact damper op1, op2 in addition in this circuit, each impact damper is connected with the diode that band gap produces among the circuit array respectively, for diode to be rotated provides suitable initial voltage, thereby avoid big output voltage fluctuation occurring and setting up process for a long time in the process by turns.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvement and distortion, these improvement and distortion also should be considered as protection scope of the present invention.
Claims (6)
1. one kind from eliminating the band-gap reference circuit of diode offset voltage, comprise that start-up circuit, band gap produce circuit, it is characterized in that, comprise the logical circuit by turns that is connected with described band gap generation circuit, rotate logical circuit every one-period and can make the diode in the described band gap generation circuit rotate link position.
2. the band-gap reference circuit of eliminating the diode offset voltage certainly according to claim 1 is characterized in that, described band gap produces circuit and comprises a plurality of diode connected in parallel.
3. according to claim 1 from the band-gap reference circuit of eliminating the diode offset voltage, it is characterized in that, described by turns logical circuit just is connected to the position of left side diode with each diode every one-period, and leftmost diode then is connected to the position of rightmost diode.
4. the band-gap reference circuit of eliminating the diode offset voltage certainly according to claim 1 is characterized in that, is included as the impact damper that diode to be rotated provides initial voltage.
5. the band-gap reference circuit of eliminating the diode offset voltage certainly according to claim 4 is characterized in that, the output terminal of described impact damper is connected with the diode that described band gap produces in the circuit.
6. according to claim 4 or the 5 described band-gap reference circuits of eliminating the diode offset voltage certainly, it is characterized in that, comprise 2 impact dampers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100589578A CN102176183A (en) | 2011-03-11 | 2011-03-11 | Band-gap reference circuit of self-cancellation diode offset voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100589578A CN102176183A (en) | 2011-03-11 | 2011-03-11 | Band-gap reference circuit of self-cancellation diode offset voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102176183A true CN102176183A (en) | 2011-09-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100589578A Pending CN102176183A (en) | 2011-03-11 | 2011-03-11 | Band-gap reference circuit of self-cancellation diode offset voltage |
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| CN (1) | CN102176183A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104571245A (en) * | 2014-12-17 | 2015-04-29 | 河北新华北集成电路有限公司 | Single-BE-node continuous output switch capacitance band gap reference circuit |
| CN111257625A (en) * | 2020-02-12 | 2020-06-09 | 淮阴工学院 | Integral comparator for detecting weak voltage signal in power control of semiconductor laser |
| CN111610814A (en) * | 2020-06-03 | 2020-09-01 | 广东高云半导体科技股份有限公司 | Band-gap reference circuit, band-gap reference voltage trimming method and electronic device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050046466A1 (en) * | 2003-08-26 | 2005-03-03 | Micron Technology, Inc. | Bandgap reference circuit |
| CN101458540A (en) * | 2007-12-14 | 2009-06-17 | 凌阳科技股份有限公司 | Band-gap reference voltage circuit |
| CN101470457A (en) * | 2007-12-26 | 2009-07-01 | 东部高科股份有限公司 | Bandgap refernce voltage generating circuit |
| CN101523324A (en) * | 2006-10-04 | 2009-09-02 | Iti苏格兰有限公司 | Start-up circuit for bandgap circuit |
| CN202075649U (en) * | 2011-03-11 | 2011-12-14 | 苏州易能微电子科技有限公司 | Bandgap circuit with self-elimination diode imbalance voltage |
-
2011
- 2011-03-11 CN CN2011100589578A patent/CN102176183A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050046466A1 (en) * | 2003-08-26 | 2005-03-03 | Micron Technology, Inc. | Bandgap reference circuit |
| CN101523324A (en) * | 2006-10-04 | 2009-09-02 | Iti苏格兰有限公司 | Start-up circuit for bandgap circuit |
| CN101458540A (en) * | 2007-12-14 | 2009-06-17 | 凌阳科技股份有限公司 | Band-gap reference voltage circuit |
| CN101470457A (en) * | 2007-12-26 | 2009-07-01 | 东部高科股份有限公司 | Bandgap refernce voltage generating circuit |
| CN202075649U (en) * | 2011-03-11 | 2011-12-14 | 苏州易能微电子科技有限公司 | Bandgap circuit with self-elimination diode imbalance voltage |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104571245A (en) * | 2014-12-17 | 2015-04-29 | 河北新华北集成电路有限公司 | Single-BE-node continuous output switch capacitance band gap reference circuit |
| CN104571245B (en) * | 2014-12-17 | 2016-03-02 | 河北新华北集成电路有限公司 | Single BE ties continuous output switch capacitor strap gap reference circuit |
| CN111257625A (en) * | 2020-02-12 | 2020-06-09 | 淮阴工学院 | Integral comparator for detecting weak voltage signal in power control of semiconductor laser |
| CN111257625B (en) * | 2020-02-12 | 2022-03-11 | 淮阴工学院 | Integral comparator for detecting weak voltage signal in power control of semiconductor laser |
| CN111610814A (en) * | 2020-06-03 | 2020-09-01 | 广东高云半导体科技股份有限公司 | Band-gap reference circuit, band-gap reference voltage trimming method and electronic device |
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Application publication date: 20110907 |