CN102169815A - Vacuum laser processing device with high productivity and processing method - Google Patents
Vacuum laser processing device with high productivity and processing method Download PDFInfo
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- CN102169815A CN102169815A CN 201110056224 CN201110056224A CN102169815A CN 102169815 A CN102169815 A CN 102169815A CN 201110056224 CN201110056224 CN 201110056224 CN 201110056224 A CN201110056224 A CN 201110056224A CN 102169815 A CN102169815 A CN 102169815A
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Abstract
The invention belongs to the semiconductor manufacturing equipment, and discloses a vacuum laser processing device with high productivity and a processing method. The device is composed of a plurality of vacuum laser processing cavities, and an annular orbit and a feeding-takeout sheet mechanical hand are arranged out of the plurality of vacuum laser process cavities; the mechanical hand moves on the annular orbit; a laser beam is positioned among the plurality of vacuum laser processing cavities and driven by a mechanical component, which can be positioned above the to-be-processed vacuum processing cavity to scan so that the laser beam performs the laser radiation processing on a wafer in the vacuum laser processing cavity in circle through a laser transparent window at a top surface of each vacuum laser processing cavity, the use efficiency of the laser beam is greatly improved; the mechanical hand is in coordination with the annular orbit to continuously feed and take out the wafer to work in circle among the vacuum laser processing cavities; and therefore, the whole device is in a sufficiently paralleled work state to improve the processing efficiency of the vacuum laser processing device.
Description
Technical field
The invention belongs to semiconductor-fabricating device and technical scope, particularly a kind of vacuum laser processing unit and processing method of high yield.
Background technology
Laser is for the effect of semi-conducting material, sees from micromechanism to be divided into two classes, and a class is with the be absorbed as master of phonon to light, because phonon has been represented lattice vibration, and its severe degree is characterized by material temperature, so thermal effect is more remarkable; Another kind of is with the be absorbed as master of electronic system in the material to light, and this moment, thermal effect was not very remarkable.Absorb for electronic system, through after the relaxation process, electronic system finally can give lattice to reach equilibrium state energy delivery, the temperature of lattice finally still can rise to some extent like this, but with respect to a lot of important utilizations the technology of laser light effect, heat effect only is a byproduct, belongs to the status of subordinate.
From the technological trend of current laser semiconductor processing, also be more and more to tend to non-heat effect.For example, in ITRS development course figure in recent years, the notion (the English AthermalAnneal of being) of non-thermal annealing has been proposed.When the technology of emphasis from early stage laser scorification, cutting, when turning to nowadays not the optical processing technique based on the insolubility of heat effect, non-heat effect, need also design and produce special process cavity and operational method in the device aspect of implementing process process at optical processing.
The present invention proposes a kind of high yield apparatus and method of the semiconductor wafer surface being implemented laser treatment, its major technology characteristic is, laser is for the processing of semiconductor material surface, be placed in the vacuum cavity and carry out, for three kinds of heat delivered mechanism,---conduction, convection current, and radiation, all suppress largely, make these thermal processs not occupy leading status.Adopt the configuration of multiprocessing chamber, the main process of laser treatment, and the complementary process before and after this process are all carried out in same process cavity; When the wafer in a certain process cavity is in complementary operation stage, wafer in another process cavity can be accepted laser irradiation and handle, therefore the different work step of technical process has been accomplished sufficient parallelization, and whole device can be realized the high yield for laser processing.
Summary of the invention
The vacuum laser processing unit and the processing method that the purpose of this invention is to provide a kind of high yield.
A kind of vacuum laser processing unit of high yield, it is characterized in that, this device is made of a plurality of vacuum laser process chambers, and outside the laser treatment chamber of a plurality of vacuum, disposed circular orbit and disposed circular orbit and fetched and delivered sheet manipulator and an above film magazine more than one near the configuration circular orbit; Manipulator moves on circular orbit; Laser beam is between a plurality of vacuum laser process chambers, drive by mechanical part, can be in desire and handle the top of vacuum laser process chamber, and scan mobilely, laser beam is changeed by laser-light transparent window wheel at each vacuum laser process chamber end face the wafer in the vacuum laser process chamber is carried out laser irradiation handle.
Described vacuum laser process chamber is made half flattened cylindrical shape structure by metal material, and the laser-light transparent window is offered at the top; In the bottom or sidewall locations, a plurality of tracheaes of going into are set, form the multichannel air inlet, in the vacuum laser process chamber, feed protective gas or reacting gas; At vacuum laser process chamber internal configurations push rod sheet support mechanism, be used to carry wafer, enter vacuum laser process chamber chamber place, carry out the processing of movable sealing at post rod mechanism, make wafer under the drive of push rod sheet support mechanism, in the vacuum laser process chamber, move up and down; In vacuum laser process chamber bottom vacuum orifice is set, by vacuum orifice the vacuum laser process chamber is vacuumized, and at vacuum laser process chamber cavity the latter half lateral wall, layout provides the cold wall type reaction chamber and the processing that the wafer after the laser irradiation processing is faster cooled off is provided around the cooling fluid pipeline.
The sheet holder of described push rod sheet support mechanism and push rod are made with the low material of thermal conductivity, do heat insulation processing with respect to the mechanical mechanism of outside drive push rod lifting simultaneously, for example the elevation and subsidence mechanical structure can adopt cylinder form, control by air inlet/give vent to anger, control the rise/landing of push rod, such implementation can separate laser treatment chamber and miscellaneous equipment parts on every side preferably.
Vacuum degree in the described vacuum laser process chamber chamber is controlled decision jointly by vacuum pump pumping rate and the flow that feeds gas, and according to different the processing stage, the air pressure in chamber is 100～200 milli torr magnitudes, and is perhaps higher; Wafer is carried out the stage that laser irradiation is handled, and is high vacuum in the chamber, and force value is 1 milli torr magnitude, and is perhaps lower.
The described sheet manipulator of fetching and delivering is more than one; And near film magazine, dispose aligning guide, wafer is carried and is sent into by manipulator again in the vacuum laser process chamber chamber through after aiming at, owing to carried out aligning, when laser beam during to the wafer surface scanning and irradiation, scan line is can be strict parallel with the scribing road of chip chamber on the wafer.
Described a plurality of vacuum laser process chamber is more than 3.
A kind of laser processing method of vacuum laser processing unit of high yield, described vacuum laser processing unit is made of a plurality of vacuum laser process chambers, and outside the laser treatment chamber of a plurality of vacuum, dispose circular orbit and fetched and delivered the sheet manipulator, manipulator moves on circular orbit, and laser beam changes by laser-light transparent window wheel at each vacuum laser process chamber end face the wafer in the vacuum laser process chamber is carried out the laser irradiation processing; It is characterized in that concrete steps are as follows:
(1) feeds air-flow to a certain vacuum laser process chamber, and be inflated to atmospheric pressure; Manipulator 11 is got a slice wafer from film magazine 10, manipulator 11 is along circular orbit 12 operations, wafer is delivered to the vacuum laser process chamber place of this inflation, having inflated the vacuum laser process chamber of finishing 2 opens facing to the door of circular orbit 12, manipulator 11 is sent wafer into this chamber, 6 holders of push rod, 4 mechanisms in this chamber rise at this moment, take over wafer; The withdrawal of manipulator arm, the door in this chamber is closed, and begins to vacuumize;
(2) reach after the required vacuum degree of technology, push rod 6 continues upwards jack-up, makes wafer enter the position that transparency window 8 is approached on vacuum chamber top, prepares to carry out the processing of laser irradiation; Carry out complementary heating to wafer this moment if desired, then adopts outside infrared source to see through 8 pairs of wafer surface of transparency window and carry out irradiated heat; In the complementary irradiated heat stage, vacuum laser process chamber 2 inside can be higher vacuum, chamber pressure is 1 milli torr, or feed minimum gas and make vacuum laser process chamber 2 inside be in lower vacuum degree, chamber pressure is 100～200 milli torrs, and the convective heat transfer by air-flow reaches reasonable even heats; Except that complementary heating,, also all be placed on this step and carry out if before laser treatment, also need to carry out other PROCESS FOR TREATMENT (for example, logical hydrogen is done clean etc. to wafer surface);
(3) laser beam 1 begins to see through transparency window 8, and wafer surface is carried out radiation treatment.Because laser beam 1 is driven by exterior mechanical mechanism, in wafer surface scanning, so all surfaces of wafer can both be processed to, when wafer is accepted laser irradiation and handled, vacuum laser process chamber 2 inside are in the high vacuum state, chamber pressure 1 milli torr or lower; When at be laser assisted film deposition technology the time, the setting of chamber pressure is then according to the requirement of technology control, by to vacuum pump group pumping rate, protective gas is gone into tolerance and process gas and is gone into the coordination of tolerance and regulate and realize;
(4) finish after the laser irradiation, push rod 6 is fallen near the cooling fluid pipeline 3 of the bottom of vacuum laser process chamber 2, or feeds protective gas once more, because the gas flow heat exchange improves the speed that wafer is cooled off;
(5) after wafer enough cooled off, the vacuum laser process chamber continued inflation until atmospheric pressure, and the chamber door is opened, and takes the wafer that machines away along the manipulator that circular orbit moves to herein, sends film magazine back to; At this moment, the vacuum laser process chamber is in idle condition, waits for that next platelet disk is admitted to carry out processed;
(6) laser beam between a plurality of vacuum laser process chambers, drive by mechanical part, can be in the top of different vacuum laser process chambers, by transparency window the wafer in the vacuum laser process chamber being carried out laser irradiation handles, manipulator on the circular orbit is then ceaselessly sent into wafer, take out, take turns the work of changing a job between each vacuum laser process chamber, whole device is under fully parallel operating state, thus the efficient of raising processing and manufacturing.
The invention has the beneficial effects as follows, special for a class, work in the laser treatment chamber under the vacuum environment, a kind of knockdown apparatus structure is provided, laser beam is taken turns the work of changing a job between different vacuum laser process chambers, greatly improve the utilization ratio of laser beam, thereby improved the productive rate of complete machine device.If not the configuration of adopting multi-cavity type, so at chamber turnover sheet, inflate and vacuumize, necessary preliminary treatment, follow-up ending necessary after the laser radiation is handled all these operation stages, laser and laser beam still are in normal operating state, but the light beam resource but is on the shelf, thereby efficient is not high, and the productive rate of equipment is not high yet.
Description of drawings
Fig. 1 is the laser treatment cavity configuration schematic diagram of vacuum.
Fig. 2 is the schematic diagram of high yield vacuum laser processing unit.
Among Fig. 1 and Fig. 2,
1. be lasing light emitter, light beam can be done the two-dimensional scan action; 2. be the laser treatment chamber that inside vacuumizes; 3. be the cooling fluid pipeline; 4. be the sheet holder at push rod top; 5. be the vacuum orifice of main process cavity bottom; 6. be push rod moving up and down; 7. be the inlet that push rod enters into vacuum chamber, carry out movable sealing herein and handle; 8. be the transparency window at process cavity top; 9. be protection gas and process gas inlet; 10. be to hold to be processed or reclaim the film magazine processed sheet; 11. be the manipulator of on ring-shaped guide rail, walking; 12. be ring-shaped guide rail.
Embodiment
The invention provides a kind of vacuum laser processing unit and processing method of high yield.Concrete device signal as shown in Figure 1 and Figure 2.
Fig. 2 is the overall schematic of high yield vacuum laser processing unit, mainly is made up of a plurality of vacuum laser process chambers, and Fig. 1 has shown one of them process chamber structure composition.
In Fig. 1, vacuum laser process chamber 2 adopts metal material to make half flattened cylindrical shape structure, and inwall covers passivation film (for example, SiC material) reaction chamber is protected.The reaction chamber outer wall constitutes " cold wall type " reaction chamber around cooling fluid pipeline 3.Vacuum laser process chamber 2 inside vacuumize by the vacuum pump group.Laser-light transparent window 8 is offered at the top; Quartz material is a kind of reasonable selection, and for near-infrared, visible light all has the good transparency to the light of ultraviolet band.In the bottom or sidewall locations, be provided with and go into tracheae 9 more than 2, form the multichannel air inlet, to vacuum laser process chamber 2 in, feed protective gas (nitrogen, argon gas) or reacting gas, to the throughput of each road air-flow, but the service quality flowmeter is regulated and control.In vacuum laser process chamber internal configurations push rod 6 and sheet holder 4, be used to carry wafer, push rod 6 enters vacuum laser process chamber inside from push rod hand-hole 7, carries out the processing of movable sealing herein, with isolated chamber vacuum and external environment condition; The sheet holder of described push rod sheet support mechanism and push rod are made with the low material of thermal conductivity, do heat insulation processing with respect to the mechanical mechanism of outside drive push rod lifting simultaneously, described heat insulation processing comprises that the elevation and subsidence mechanical structure adopts cylinder form, by the air inlet or the control of giving vent to anger, control the rise and the landing of push rod, can separate laser treatment chamber and equipment unit on every side heat and transmit.
External motor drives push rod 6, sheet holder 4 can move up and down, and makes wafer under the drive of push rod sheet support mechanism, moves up and down in the vacuum laser process chamber; In vacuum laser process chamber bottom vacuum orifice 5 is set, vacuumize by 5 pairs of vacuum laser process chambers 2 of vacuum orifice, and at vacuum laser process chamber cavity the latter half lateral wall, layout provides the cold wall type reaction chamber and the processing that the wafer after the laser irradiation processing is faster cooled off is provided around cooling fluid pipeline 3.
In vacuum laser process chamber bottom, open up a door, be used for the connection of chamber internal and external environment.When the air pressure environmental balance inside and outside the chamber, door can be opened, and sends into wafer to be processed by the manipulator 11 of outside, perhaps takes out the wafer that has machined.After door was closed, chamber interior can vacuumize.The Push And Release of door drives realization by electronic installation.In the stage of fetching and delivering sheet, cavity indoor pressure is an atmospheric pressure; After wafer laser irradiation is finished, if desired wafer is carried out faster cooling, the chamber internal gas pressure can be in 100～200 milli torr magnitudes, and is perhaps higher; Wafer is carried out the stage that laser irradiation is handled, and is high vacuum in the chamber, and force value is 1 milli torr magnitude, and is perhaps lower.
At the lateral wall of process cavity, around coolant pipe 3, piping material can be a metal material, and cooling fluid can be a cooling water.
As shown in Figure 2, some vacuum laser process chambers are combined into the device of multi-cavity type.Fig. 2 has shown the configuring condition of three vacuum laser process chambers, but the complete machine device can be made up of the vacuum laser process chamber more than 3.
Among Fig. 2, outside three vacuum laser process chambers, be provided with circular orbit 12 and fetch and deliver sheet manipulator 11 and an above film magazine 10 more than one near the configuration circular orbit 12, Fig. 2 has shown the situation of two film magazines 10, look different needs, film magazine is configurable more a plurality of.The height of track is to be near the vacuum laser process chamber bottom, and the manipulator 11 that moves on the track, and its Height Adjustment arrives the matched position of chamber door height with each vacuum laser process chamber, can send sheet to get sheet smoothly.
The position of laser between three vacuum laser process chambers, the light beam outgoing that makes progress, it is horizontal to make that by speculum light beam becomes, and light beam is after laterally through a segment distance, further pass through speculum, make light beam downward, see through the transparency window 8 at vacuum laser process chamber top, the wafer in the irradiation chamber.Laser beam is for the scanning motion of the inner wafer of a certain vacuum laser process chamber, drive relevant optical system and light path realization by mechanical motion mechanism, for example adopt two each be with incident ray that 45 degree place, movably speculum can be realized the scanning of light beam on two-dimensional directional.The wheel of laser beam between the different process chamber changes, and is to drive laser and optical system light path element by mechanical mechanism, and integral body realizes around the rotation of equipment longitudinal axis.For example in situation shown in Figure 2, rotation 120 degree can be from a vacuum laser process chamber top, and wheel forwards the top of another vacuum laser process chamber to.
Adopt apparatus of the present invention, carry out the detailed process of PROCESS FOR TREATMENT, illustrate as follows:
(1) lasing light emitter is opened, to stable output laser beam 1.Feed air-flow to a certain vacuum laser process chamber, and be inflated to atmospheric pressure; Manipulator 11 is got a slice wafer from film magazine 10, manipulator 11 is along circular orbit 12 operations, wafer is delivered to the vacuum laser process chamber place of this inflation, having inflated the vacuum laser process chamber of finishing 2 opens facing to the door of circular orbit 12, manipulator 11 is sent wafer into this chamber, 6 holders of push rod, 4 mechanisms in this chamber rise at this moment, take over wafer; The withdrawal of manipulator arm, the door in this chamber is closed, and begins to vacuumize;
(2) reach after the required vacuum degree of technology, push rod 6 continues upwards jack-up, makes wafer enter the position that transparency window 8 is approached on vacuum chamber top, prepares to carry out the processing of laser irradiation; Carry out complementary heating to wafer this moment if desired, then adopts outside infrared source to see through 8 pairs of wafer surface of transparency window and carry out irradiated heat; In the complementary irradiated heat stage, vacuum laser process chamber 2 inside can be higher vacuum, chamber pressure is 1 milli torr, or feed minimum gas and make vacuum laser process chamber 2 inside be in lower vacuum degree, chamber pressure is 100～200 milli torrs, and the convective heat transfer by air-flow reaches reasonable even heats; Except that complementary heating,, also all be placed on this step and carry out if before laser treatment, also need to carry out other PROCESS FOR TREATMENT (for example, logical hydrogen is done clean etc. to wafer surface);
(3) laser beam 1 begins to see through transparency window 8, and wafer surface is carried out radiation treatment.Because laser beam 1 is driven by exterior mechanical mechanism, in wafer surface scanning, so all surfaces of wafer can both be processed to, when wafer is accepted laser irradiation and handled, vacuum laser process chamber 2 inside are in the high vacuum state, chamber pressure 1 milli torr or lower; When at be laser assisted film deposition technology the time, the setting of chamber pressure is then according to the requirement of technology control, by to vacuum pump group pumping rate, protective gas is gone into tolerance and process gas and is gone into the coordination of tolerance and regulate and realize;
(4) finish after the laser irradiation, push rod 6 is fallen near the cooling fluid pipeline 3 of the bottom of vacuum laser process chamber 2, or feeds protective gas once more, because the gas flow heat exchange improves the speed that wafer is cooled off;
(5) after wafer enough cooled off, the vacuum laser process chamber continued inflation until atmospheric pressure, and the chamber door is opened, and takes the wafer that machines away along the manipulator that circular orbit moves to herein, sends film magazine back to; At this moment, the vacuum laser process chamber is in idle condition, waits for that next platelet disk is admitted to carry out processed;
(6) laser beam between a plurality of vacuum laser process chambers, drive by mechanical part, can be in the top of different vacuum laser process chambers, by transparency window the wafer in the vacuum laser process chamber being carried out laser irradiation handles, manipulator on the circular orbit is then ceaselessly sent into wafer, take out, take turns the work of changing a job between each vacuum laser process chamber, whole device is under fully parallel operating state, thus the efficient of raising processing and manufacturing.
Claims (7)
1. the vacuum laser processing unit of a high yield, it is characterized in that, this device is made of a plurality of vacuum laser process chambers more than 3, and outside the laser treatment chamber of a plurality of vacuum, has disposed circular orbit and fetched and delivered sheet manipulator and an above film magazine more than one near the configuration circular orbit; Manipulator moves on circular orbit; Laser beam is between a plurality of vacuum laser process chambers, drive by mechanical part, can be in desire and handle the top of vacuum laser process chamber, and scan mobilely, laser beam is changeed by laser-light transparent window wheel at each vacuum laser process chamber end face the wafer in the vacuum laser process chamber is carried out laser irradiation handle.
2. according to the vacuum laser processing unit of the described high yield of claim 1, it is characterized in that described vacuum laser process chamber is made half flattened cylindrical shape structure by metal material, the laser-light transparent window is offered at the top; In the bottom or sidewall locations, the tracheae of going into more than 2 is set, form the multichannel air inlet, in the vacuum laser process chamber, feed protective gas or reacting gas; At vacuum laser process chamber internal configurations push rod sheet support mechanism, be used to carry wafer, enter vacuum laser process chamber chamber place, carry out the processing of movable sealing at post rod mechanism, make wafer under the drive of push rod sheet support mechanism, in the vacuum laser process chamber, move up and down; In vacuum laser process chamber bottom vacuum orifice is set, by vacuum orifice the vacuum laser process chamber is vacuumized, and at vacuum laser process chamber cavity the latter half lateral wall, layout provides the cold wall type reaction chamber and the processing that the wafer after the laser irradiation processing is faster cooled off is provided around the cooling fluid pipeline.
3. according to the vacuum laser processing unit of the described high yield of claim 1, it is characterized in that, the sheet holder of described push rod sheet support mechanism and push rod are made with the low material of thermal conductivity, do heat insulation processing with respect to the mechanical mechanism of outside drive push rod lifting simultaneously, described heat insulation processing comprises that the elevation and subsidence mechanical structure adopts cylinder form, by the air inlet or the control of giving vent to anger, control the rise and the landing of push rod, can separate laser treatment chamber and equipment unit on every side heat and transmit.
4. according to the vacuum laser processing unit of the described high yield of claim 1, it is characterized in that, vacuum degree in the described vacuum laser process chamber chamber is controlled decision jointly by the flow of vacuum pump pumping rate and feeding gas, according to different the processing stage, air pressure in chamber is 100～200 milli torr magnitudes, and is perhaps higher; Wafer is carried out the stage that laser irradiation is handled, and is high vacuum in the chamber, and force value is 1 milli torr magnitude, and is perhaps lower.
5. according to the vacuum laser processing unit of the described high yield of claim 1, it is characterized in that, near the configuration aligning guide described film magazine, wafer is through after aiming at, carry and send in the vacuum laser process chamber chamber again by manipulator, owing to carried out aligning, when laser beam during to the wafer surface scanning and irradiation, scan line is can be strict parallel with the scribing road of chip chamber on the wafer.
6. according to the vacuum laser processing unit of the described high yield of claim 1, it is characterized in that described a plurality of vacuum laser process chambers are more than 3.
7. the laser processing method of the vacuum laser processing unit of a high yield, described vacuum laser processing unit is made of a plurality of vacuum laser process chambers, and outside the laser treatment chamber of a plurality of vacuum, dispose circular orbit and fetched and delivered the sheet manipulator, manipulator moves on circular orbit, and laser beam changes by laser-light transparent window wheel at each vacuum laser process chamber end face the wafer in the vacuum laser process chamber is carried out the laser irradiation processing; It is characterized in that concrete steps are as follows:
(1) feeds air-flow to a certain vacuum laser process chamber, and be inflated to atmospheric pressure; (10 get a slice wafer to manipulator (11) from film magazine, manipulator (11) moves along circular orbit (12), wafer is delivered to the vacuum laser process chamber place of this inflation, having inflated the vacuum laser process chamber of finishing (2) opens facing to the door of circular orbit (12), manipulator (11) is sent wafer into this chamber, push rod sheet support mechanism in this chamber rises at this moment, takes over wafer; The withdrawal of manipulator arm, the door in this chamber is closed, and begins to vacuumize;
(2) reach after the required vacuum degree of technology, push rod (6) continues upwards jack-up, makes wafer enter the position that transparency window (8) are approached on vacuum chamber top, prepares to carry out the processing of laser irradiation; Carry out complementary heating to wafer this moment if desired, then adopts outside infrared source to see through transparency window (8) wafer surface is carried out irradiated heat; In the complementary irradiated heat stage, vacuum laser process chamber (2) inside can be higher vacuum, chamber pressure is 1 milli torr, or feed minimum gas and make vacuum laser process chamber (2) inside be in lower vacuum degree, chamber pressure is 100～200 milli torrs, and the convective heat transfer by air-flow reaches reasonable even heats; Except that complementary heating, if before laser treatment, also need to lead to hydrogen wafer surface is done clean, also all be placed on this step and carry out;
(3) laser beam 1 begins to see through transparency window (8), wafer surface is carried out radiation treatment, because laser beam (1) is driven by exterior mechanical mechanism, scan in wafer surface, therefore all surfaces of wafer can both be processed to, when wafer was accepted laser irradiation and handled, vacuum laser process chamber (2) inside was in high vacuum state, chamber pressure 1 milli torr or lower; When at be laser assisted film deposition technology the time, the setting of chamber pressure is then according to the requirement of technology control, by to vacuum pump group pumping rate, protective gas is gone into tolerance and process gas and is gone into the coordination of tolerance and regulate and realize;
(4) finish after the laser irradiation, push rod (6) is fallen to the vacuum laser process chamber and (near the cooling fluid pipeline (3) of 2 bottom, or is fed protective gas once more, because the gas flow heat exchange, improve the speed that wafer is cooled off;
(5) after wafer enough cooled off, the vacuum laser process chamber continued inflation until atmospheric pressure, and the chamber door is opened, and takes the wafer that machines away along the manipulator that circular orbit moves to herein, sends film magazine back to; At this moment, the vacuum laser process chamber is in idle condition, waits for that next platelet disk is admitted to carry out processed;
(6) laser beam between a plurality of vacuum laser process chambers, drive by mechanical part, can be in the top of different vacuum laser process chambers, by transparency window the wafer in the vacuum laser process chamber being carried out laser irradiation handles, manipulator on the circular orbit is then ceaselessly sent into wafer, take out, take turns the work of changing a job between each vacuum laser process chamber, whole device is under fully parallel operating state, thus the efficient of raising processing and manufacturing.
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| CN102280400A (en) * | 2011-09-05 | 2011-12-14 | 清华大学 | Wafer aligning method in laser beam processing |
| CN103904005A (en) * | 2012-12-27 | 2014-07-02 | 三星显示有限公司 | Multi-functional apparatus for testing and etching substrate and substrate processing apparatus including the same |
| CN104681405A (en) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Acquisition method of electrically matched symmetric circuit |
| CN109686686A (en) * | 2019-01-30 | 2019-04-26 | 北京华卓精科科技股份有限公司 | Laser heat treatment equipment and laser heat treatment method |
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| CN102169815B (en) | 2012-09-05 |
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