CN102280400A - Wafer aligning method in laser beam processing - Google Patents
Wafer aligning method in laser beam processing Download PDFInfo
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- CN102280400A CN102280400A CN2011102610709A CN201110261070A CN102280400A CN 102280400 A CN102280400 A CN 102280400A CN 2011102610709 A CN2011102610709 A CN 2011102610709A CN 201110261070 A CN201110261070 A CN 201110261070A CN 102280400 A CN102280400 A CN 102280400A
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Abstract
The invention discloses a wafer aligning method in laser beam processing and belongs to a semiconductor manufacturing technology. The method comprises the following steps of: aligning a wafer by using a separate aligning wafer table; and conveying the wafer onto a technical cavity wafer table by using a precision manipulator under the condition that unnecessary change of an aligned result is avoided. By the method, scribe lines between chips become available resources, so that an edge effect of a light beam which is difficultly controlled precisely in the laser beam processing can be consumed in the scribe lines which do not influence functions and performance of a chip. By using a relatively independent aligning mechanism which takes another aligning wafer table as a main component, the wafer which is finally put on a processing wafer table has high positioning precision through a coarse aligning step and a precise aligning step on the aligning wafer table and through wafer conveying of the precision manipulator, so that the laser beam processing can be effectively concentrated in a chip area, and the technical effect and the uniformity of the laser processing are ensured.
Description
Technical field
The invention belongs to the semiconductor fabrication scope, the wafer alignment methods in particularly a kind of laser beam processed.
Background technology
Current, the application of laser in the semi-conducting material processed comprised laser annealing, the laser assisted film deposition, and the laser recrystallization growth of material, even also excimer lithography can be included, application is diversified.
Because laser beam has very strong coherence, laser beam is pack often, and being not easy to scatter becomes the larger area light beam, and on the other hand, the wafer size is very big again, so laser beam can only be that carry out partly one of a part for the effect of backing material.Usually the mode that adopts is that laser beam is done scanning with respect to material surface, stepping, perhaps the stepping translation that adds scanning is moved, realize line by line, perhaps by processed.No matter be line by line,, always exist between the row connection problem between the field by the field.For bad linking, exist two class problems, the one, joining place two row or two have small overlapping, although then the overlapping region is very little, but consider that the size of electronic devices and components is littler in the integrated circuit, thereby be affected, just had much by the component number of excess process, directly influence the integrated circuit crudy.Another kind of problem is between two row, has small space between two, and similarly, it is a lot of to be subjected to this to influence the electronic devices and components quantity that is not lasered processing, and crudy can not guarantee.Because laser beam bundle spot, core at the bundle spot, accomplish the light intensity homogenizing, simple comparatively speaking, but in the close edge of light beam part, also require light beam even equally, very difficult comparatively speaking, the light intensity of adding the edge can not definitely ideally be suddenlyd change and be reduced to zero suddenly, and the existence of these factors has more increased the weight of the complex nature of the problem.
At the problem in the above practice, a kind of effective treatment measures are the scribing road width that make full use of between the chip.Specifically, order scanning or stepping, strictly along the transversely arranged direction of chip array left or the right side carry out, light beam bundle spot is not easy up and down to handle, neither well-proportioned part, fall within the part of scribe line, be cost so just with the crudy of sacrificing scribe line area, tried to achieve for the efficient circuit zone the assurable crudy of chip area processing just.After scanning or stepping to the wafer edge, laser beam line down (moving delegation perhaps), and turn around in the opposite direction, continue its horizontal scanning or stepping and advance by the field.For one one processed of step-by-step system, then restraint spot about two edges, also drop in the chip scribing road.
Scribing road width is tens microns magnitude.Make laser beam when translation is moved, the edge of bundle spot drops in the scribing road, just must restraint spot with respect to the aligning of wafer (but application reference number is 201010514994.0 Chinese patent).In view of a lot of laser processings, all require to carry out preheating of substrate, pre-hyperthermic treatment, so aligning in the laser-beam working device, possess two characteristics, the one, alignment procedures can be subjected to the certain high temperature influence, can arrive 400～500 degree when temperature is higher, and even higher, under high-temperature condition, the thermal expansion of wafer will be difficult to ignore, higher in addition temperature, and the infrared radiation background of wafer full wafer under the higher temperature, all may be to the optical system for alignment of wafer, registration signal is handled and is brought very big harmful effect.Second characteristic is, because the scribing road possesses certain width, therefore the requirement for alignment precision is not very high, should be acceptable in 10～20 micrometer ranges.
Summary of the invention
The purpose of this invention is to provide the wafer alignment methods in a kind of laser beam processed, it is characterized in that, the aligning that carries out wafer comprises two stages:
In the phase I, employing constitutes general wafer aligning guide 3 by multiaxis moving sheet platform and optical detection component, wafer is aimed at, wafer passes through passage 4 from film magazine 2 earlier, be placed on by manipulator on the multiaxis travelling carriage of aligning guide 3, at aligning guide 3 places, breach by wafer or locate flat limit before this, carry out the coarse positioning of wafer, coarse alignment, and then by the specific figure on the wafer, the figure of scribing road part is particularly determined the centre coordinate of chip array, and and the horizontal shifting axle of multiaxis travelling carriage between angle, by rotation multiaxis travelling carriage, make the horizontal scribing road of chip array on the wafer parallel with the horizontal moving direction of multiaxis platform;
Second stage, use the manipulator of precision positioning and control, with carrying out the wafer of fine alignment,, be placed into along passage 5 on the technology sheet platform of 1 inside, laser processing technology chamber from aligning guide 3.The manipulator that wherein send sheet to pass sheet is the device of precision positioning, the extra error of being introduced in the process of transmitting and placing is less than ± 5 micrometer ranges, with respect to the width in tens microns in scribing road, the final general orientation precision that realizes is an acceptable in less than ± 10 micrometer ranges.
Described wafer is after aligning guide is placed on the technology sheet platform, need carry out complementary heating, can carry out technological experiment this moment, measure and make the coefficient of expansion effective value under the specified temp, after accurately estimating the size bulking effect, relevant information is fed back to the control system that the sheet platform moves, after compensating by control system, carrying out the scanning or the step-scan of sheet platform again moves, specific practice is at the information of wafer change in size after the thermal expansion, to regulate sweep speed and scanning position wittingly, so that scan line accurately drops on the wafer position of expection, the wafer size after the feasible actual scanning that takes place is suitable for changing.
The invention has the beneficial effects as follows and propose a kind of wafer alignment methods that is used for the laser beam processing device, its major technology characteristics are, aligning guide separates with process cavity, carry out the wafer prealignment independently in the processing chamber outside, be sent on the process cavity sheet platform by the precision optical machinery hand then.Wafer is through aiming at after the location, mainly the positional precision that guarantees to process wafer on the sheet platform by the control precision of transmission sheet manipulator.Carry out the laser beam of assistant heating for needs and handle, according to the coefficient of expansion of actual measurement, after accurately estimating size harmomegathus, the control system that feedback information moves to the sheet platform is carried out the scanning or the step-scan of sheet platform again and is moved after being compensated by control system.Therefore overcome common, aligning guide in the mask aligner class equipment, because the alignment precision height of itself, realize the also high deficiency of cost, special because the implementation that itself and process cavity integrate, and be not suitable for sheet platform with assistant heating, and separate type aligning guide of the present invention adopts low-cost the realization.Aligning and locating accuracy are satisfied with the demand of particular process, then are particularly suitable for target application.Adopt the inventive method, make the scanning of laser beam process, the processing of perhaps step-scan formula, strict size and the direction of being decided by chip and scribing road carried out, better crudy can be provided, mainly be presented as the uniformity of each chip manufacture on the better sheet.
Description of drawings
Fig. 1 adopts the discrete alignment structure to carry out the schematic diagram that wafer is aimed at.
Among the figure, 1. are process cavity bodies; 2. be film magazine, get sheet or loopback wafer from here to herein; 3. be the aligning guide that is separated with the process cavity body; 4. what be film magazine to align structures fetches and delivers the sheet path; 5. be the operation path of precision optical machinery hand, between aligning guide and process cavity body, transmit wafer by the precision optical machinery hand.
Embodiment
The invention provides the method for the aligning of wafer in a kind of laser beam processed.Concrete way is that the alignment tab platform that employing separates is realized the aligning of wafer, then by the precision optical machinery hand, keeping alignment result no longer to take place under the situation of unwanted variation, wafer is sent on the process cavity sheet platform.Here two sheet platforms have been related to, one is the sheet platform that uses in the technology, one is the sheet platform to punctual use, different with the application of mask aligner class, two kinds of sheet platforms do not adopt shared mode, integratedly be embodied as a kind of platform, but adopted the independent respectively mode that is provided with, separate so be called.The alignment tab platform is that wafer enters into the link that process cavity is accepted the centre of laser treatment from film magazine between film magazine and process cavity.
As shown in Figure 1.The specific implementation of aligning guide 3 is to be made up of the system that multiaxial motion sheet platform adds optical detection and processing.Multiaxial motion sheet platform can x (about), y (front and back), three directions of z (up and down) move, x wherein, the y direction can tens centimetres in a big way in move, the moving range of z direction is then in the millimeter magnitude, purpose provides the well focussed of detection optical system.The multiaxial motion platform can also be done rotation around the z axle and rotate in the x-y plane.
Wafer passes through passage 4 from film magazine 2 earlier, be placed on by manipulator on the multiaxis travelling carriage of aligning guide 3, at aligning guide 3 places, breach by wafer or locate flat limit before this, carry out the coarse positioning of wafer, coarse alignment, wafer are put on the multiaxial motion platform, at first are to carry out coarse alignment, coarse alignment can utilize the locating notch of wafer, adopt photoelectricity coupling components and parts to realize that wherein photoelectricity coupling components and parts are fixed, and wafer is by the drive carrying out of multiaxial motion sheet platform translation and rotation, light-sensitive device receives, by the light that luminescent device sends, logical light quantity reach peaked that, think the gap position of wafer.Through behind the coarse alignment,, be placed into along passage 5 on the technology sheet platform of 1 inside, laser processing technology chamber from aligning guide 3.The manipulator that wherein send sheet to pass sheet is the device of precision positioning, and the location uncertainty of wafer is compressed in several millimeters and the ten milliradian magnitudes.Carry out fine alignment then, fine alignment adopts optical detection system to realize that particularly, optical detection system is fixed, the sheet platform drive that wafer moves thereby wafer on different graphic, the especially figure in scribing road, will constantly enter into the optical probe head below.Optical detection can be the image pickup head, and the imaging signal after the shooting is carried out graphical analysis and processing, thereby determines exact position, scribing road.Optical detection also can be a power of surveying the optical grating reflection signal, and need in advance in the street area of wafer this moment, and perhaps other suitable zones are pre-formed grating (perhaps can play the figure of optical grating reflection effect).Through the step of fine alignment, the uncertainty of wafer location positioning is compressed into 10～20 microns scope, and the magnitude of wafer rotation amount less than 0.07 milliradian.Above process, technical processing are not difficult.
Wafer after aiming at is placed on the processing sheet platform, use be the precision optical machinery arm device.Except that Systematic Errors, the additional positions error that the transport process of precision optical machinery hand is introduced is at several microns, and rotation amount is in 0.03 milliradian magnitude or littler.Manipulator passes the alliance error of sheet, and because the sheet platform heats caused systematic error, and the automatic control software and hardware system that can move by the sheet platform compensates and balances out in the aspect of software.
Through above registration process, finally be placed into the wafer on the processing sheet platform, total Positioning Precision Control is in 30 micrometer ranges, and total rotation amount is controlled at below 0.1 milliradian.Consider the wafer of 300mm, the alternate position spike that rotation amount is introduced in 0.1 milliradian is 30 microns, so position error adds the additional position error that rotation amount brings, and overall error is less than 60 microns, and 60 microns is scribing road size under the present art.For future the scribing road further compress, perhaps adopt larger sized wafer, then only need correspondingly improve aligned units precision and manipulator and pass the sheet position control accuracy and get final product.
Major technology characteristics of the present invention are that aligning guide is to separate with process cavity, carry out the wafer prealignment independently in the processing chamber outside, are sent on the process cavity sheet platform by the precision optical machinery hand then.The aligning guide of current main-stream, the aligning guide of mask aligner in the semiconductor machining for example is that the exposure body with machine is integrated in a place, thereby the alignment scheme of the separate type among the present invention, and is all inequality with all main flow aligning guide implementations.On the other hand, current main laser processing device does not contain the aligning guide of wafer again, and the therefore laser processing device that adopts this programme to realize does not also duplicate mutually with the existing device of such one big class.Wafer is through aiming at after the location, mainly the positional precision that guarantees to process wafer on the sheet platform by the control precision of transmission sheet manipulator.Specifically, be placed into the wafer on the sheet platform, the centralized positioning of its chip array and array direction location all will be appropriate to ensuing laser beam and handle.Carry out the laser beam of assistant heating for needs and handle, according to the coefficient of expansion of actual measurement, after accurately estimating size harmomegathus, the control system that feedback information moves to the sheet platform is carried out the scanning or the step-scan of sheet platform again and is moved after being compensated by control system.Here, about position compensation to expanding, for instance, if measuring the wafer uniformity expands, diameter wafer is by standard value 300.0mm, be changed to 300.1mm,, the speed of line scanning can be promoted (300.1-300.0)/300.0=0.033% and scan for carrying out the system that scanning is moved; Meanwhile, it is constant that the position at wafer center can be thought, but the position of wafer top and bottom has uprised with step-down 0.05mm respectively, therefore when scan line is in the upper end of wafer, the mechanism that is in charge of the above-below direction motion, to walk 0.05mm more, just can make scan line accurately drop on the wafer position of expection.
Claims (2)
1. the wafer alignment methods in the laser beam processed is characterized in that the aligning that carries out wafer comprises two stages:
In the phase I, employing constitutes general wafer aligning guide (3) by multiaxis moving sheet platform and optical detection component, wafer is aimed at, wafer earlier from film magazine (2) by passage (4), be placed on by manipulator on the multiaxis travelling carriage of aligning guide (3), locate at aligning guide (3), breach by wafer or locate flat limit before this, carry out the coarse positioning of wafer, coarse alignment, and then by the specific figure on the wafer, the figure of scribing road part is particularly determined the centre coordinate of chip array, and and the horizontal shifting axle of multiaxis travelling carriage between angle, by rotation multiaxis travelling carriage, make the horizontal scribing road of chip array on the wafer parallel with the horizontal moving direction of multiaxis platform;
Second stage, use the manipulator of precision positioning and control, with carrying out the wafer of fine alignment,, be placed on the inner technology sheet platform in laser processing technology chamber (1) along passage (5) from aligning guide (3); The manipulator that wherein send sheet to pass sheet is the device of precision positioning, the extra error of being introduced in the process of transmitting and placing is less than ± 5 micrometer ranges, with respect to the width in tens microns in scribing road, the final general orientation precision that realizes is being acceptables less than ± 10 micrometer ranges.
2. according to the wafer alignment methods in the described laser beam processed of claim 1, it is characterized in that, described wafer is after aligning guide is placed on the technology sheet platform, need carry out complementary heating, can carry out technological experiment this moment, measure and make the coefficient of expansion effective value under the specified temp, after accurately estimating the size bulking effect, relevant information is fed back to the control system that the sheet platform moves, after compensating by control system, carrying out the scanning or the step-scan of sheet platform again moves, specific practice is at the information of wafer change in size after the thermal expansion, to regulate sweep speed and scanning position wittingly, so that scan line accurately drops on the wafer position of expection, the wafer size after the feasible actual scanning that takes place is suitable for changing.
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| CN 201110261070 CN102280400B (en) | 2011-09-05 | 2011-09-05 | Wafer aligning method in laser beam processing |
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| CN 201110261070 CN102280400B (en) | 2011-09-05 | 2011-09-05 | Wafer aligning method in laser beam processing |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104191094A (en) * | 2014-06-12 | 2014-12-10 | 上海功源自动化技术有限公司 | High-precision wafer back etching centering system groove alignment method |
| CN105514002A (en) * | 2015-12-17 | 2016-04-20 | 上海集成电路研发中心有限公司 | Equipment front-end module device and silicon wafer alignment method |
| CN108008609A (en) * | 2017-12-20 | 2018-05-08 | 中国电子科技集团公司第五十五研究所 | A kind of method that 4 inches of GaN disk exposure technologies are realized on litho machine |
| CN111863342A (en) * | 2019-04-28 | 2020-10-30 | 上海微电子装备（集团）股份有限公司 | ITO annealing process |
| CN112005359A (en) * | 2018-04-27 | 2020-11-27 | 东京毅力科创株式会社 | Substrate processing system and substrate processing method |
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Patent Citations (5)
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| US20060110836A1 (en) * | 2004-11-19 | 2006-05-25 | Infineon Technologies Richmond, Lp | Eliminating systematic process yield loss via precision wafer placement alignment |
| US20070004058A1 (en) * | 2005-07-04 | 2007-01-04 | Heok-Jae Lee | Semiconductor manufacturing device with transfer robot |
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| CN104191094A (en) * | 2014-06-12 | 2014-12-10 | 上海功源自动化技术有限公司 | High-precision wafer back etching centering system groove alignment method |
| CN105514002A (en) * | 2015-12-17 | 2016-04-20 | 上海集成电路研发中心有限公司 | Equipment front-end module device and silicon wafer alignment method |
| CN108008609A (en) * | 2017-12-20 | 2018-05-08 | 中国电子科技集团公司第五十五研究所 | A kind of method that 4 inches of GaN disk exposure technologies are realized on litho machine |
| CN108008609B (en) * | 2017-12-20 | 2020-05-05 | 中国电子科技集团公司第五十五研究所 | Method for realizing exposure process of 4-inch GaN wafer on photoetching machine |
| CN112005359A (en) * | 2018-04-27 | 2020-11-27 | 东京毅力科创株式会社 | Substrate processing system and substrate processing method |
| CN112005359B (en) * | 2018-04-27 | 2024-02-06 | 东京毅力科创株式会社 | Substrate processing system and substrate processing method |
| CN111863342A (en) * | 2019-04-28 | 2020-10-30 | 上海微电子装备（集团）股份有限公司 | ITO annealing process |
| CN111863342B (en) * | 2019-04-28 | 2021-08-27 | 上海微电子装备（集团）股份有限公司 | ITO annealing process |
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