CN102165686B - 利用偏压供给调制的增强型多尔蒂放大器 - Google Patents
利用偏压供给调制的增强型多尔蒂放大器 Download PDFInfo
- Publication number
- CN102165686B CN102165686B CN200980138079.1A CN200980138079A CN102165686B CN 102165686 B CN102165686 B CN 102165686B CN 200980138079 A CN200980138079 A CN 200980138079A CN 102165686 B CN102165686 B CN 102165686B
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- Prior art keywords
- signal
- auxiliary
- bias voltage
- main
- amplifier
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- Expired - Fee Related
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- 238000002360 preparation method Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 12
- 238000007493 shaping process Methods 0.000 claims description 12
- 230000009977 dual effect Effects 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 6
- 230000003321 amplification Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 230000000644 propagated effect Effects 0.000 claims description 2
- 230000008859 change Effects 0.000 description 10
- 238000013461 design Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 241001125929 Trisopterus luscus Species 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/04—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers
- H03F1/06—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators
- H03F1/07—Doherty-type amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
- H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
- H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
- H03F1/3247—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using feedback acting on predistortion circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
- H04W88/08—Access point devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/15—Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/321—Use of a microprocessor in an amplifier circuit or its control circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/241,424 US7619468B1 (en) | 2008-09-30 | 2008-09-30 | Doherty amplifier with drain bias supply modulation |
US12/241424 | 2008-09-30 | ||
PCT/CA2009/001354 WO2010037212A1 (en) | 2008-09-30 | 2009-09-28 | Enhanced doherty amplifier with bias supply modulation |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102165686A CN102165686A (zh) | 2011-08-24 |
CN102165686B true CN102165686B (zh) | 2014-09-03 |
Family
ID=41279646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980138079.1A Expired - Fee Related CN102165686B (zh) | 2008-09-30 | 2009-09-28 | 利用偏压供给调制的增强型多尔蒂放大器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7619468B1 (zh) |
EP (1) | EP2342817B1 (zh) |
JP (1) | JP2012504355A (zh) |
KR (1) | KR101349626B1 (zh) |
CN (1) | CN102165686B (zh) |
BR (1) | BRPI0919134A2 (zh) |
WO (1) | WO2010037212A1 (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11036262B1 (en) * | 2008-01-14 | 2021-06-15 | Micro Mobio Corporation | Radio frequency power amplifier with adjacent channel leakage correction circuit |
FR2936911A1 (fr) * | 2008-10-02 | 2010-04-09 | Thomson Licensing | Reseau de commande d'alimentation d'un systeme d'elements actifs |
US8022768B1 (en) * | 2008-12-19 | 2011-09-20 | Nortel Networks Limited | Doherty amplifier and method for operation thereof |
CN102906996A (zh) * | 2010-03-12 | 2013-01-30 | 中兴通讯股份有限公司 | 用于改善效率和线性度的分解发射系统及方法 |
KR101128487B1 (ko) * | 2010-10-12 | 2012-06-21 | 포항공과대학교 산학협력단 | 전력 증폭기 선형화 방법 및 장치 |
EP2482448A1 (en) * | 2011-01-31 | 2012-08-01 | Alcatel Lucent | Doherty amplifier and method of operating a Doherty amplifier |
CN102170271A (zh) * | 2011-04-29 | 2011-08-31 | 中兴通讯股份有限公司 | 功率放大装置及功放电路 |
DE102011079613A1 (de) * | 2011-06-30 | 2013-01-03 | Rohde & Schwarz Gmbh & Co. Kg | Doherty-Verstärker mit Wirkungsgradoptimierung |
US8503967B2 (en) * | 2011-08-04 | 2013-08-06 | Mediatek Inc. | Amplifier and associated receiver |
JP5800360B2 (ja) * | 2011-11-30 | 2015-10-28 | 住友電工デバイス・イノベーション株式会社 | ドハティ増幅器 |
JP5858281B2 (ja) * | 2011-12-21 | 2016-02-10 | 株式会社村田製作所 | 半導体装置 |
US8774742B2 (en) * | 2012-01-18 | 2014-07-08 | Qualcomm Incorporated | High efficiency transmitter |
US8514007B1 (en) | 2012-01-27 | 2013-08-20 | Freescale Semiconductor, Inc. | Adjustable power splitter and corresponding methods and apparatus |
JP5810989B2 (ja) * | 2012-03-15 | 2015-11-11 | 富士通株式会社 | 増幅装置および制御方法 |
EP2658116A1 (en) * | 2012-04-23 | 2013-10-30 | Alcatel-Lucent | Amplifier circuit |
CN104704747B (zh) * | 2012-07-31 | 2017-08-25 | F·甘诺奇 | 扩展带宽的数字多尔蒂发射机 |
CN103633949B (zh) * | 2012-08-21 | 2020-04-03 | 唯捷创芯(天津)电子技术股份有限公司 | 多模功率放大器、多模切换方法及其移动终端 |
US8593219B1 (en) * | 2012-08-31 | 2013-11-26 | Motorola Solutions, Inc. | Method and apparatus for amplifying a radio frequency signal |
US8622313B1 (en) * | 2012-09-25 | 2014-01-07 | Cambridge Silicon Radio Limited | Near field communications device |
JP6175805B2 (ja) * | 2013-03-01 | 2017-08-09 | 富士通株式会社 | 受信装置 |
JP2015046795A (ja) * | 2013-08-28 | 2015-03-12 | 株式会社東芝 | 電力増幅装置、及び電力増幅装置の制御方法 |
CA2921898C (en) * | 2013-08-28 | 2019-12-31 | Deltanode Solutions Ab | Amplifying stage working point determination |
US9225291B2 (en) * | 2013-10-29 | 2015-12-29 | Freescale Semiconductor, Inc. | Adaptive adjustment of power splitter |
KR102073903B1 (ko) | 2013-10-31 | 2020-03-02 | 삼성전자주식회사 | 무선 송신 장치에서 신호 이득을 제어하기 위한 장치 및 방법 |
JP5833094B2 (ja) * | 2013-12-26 | 2015-12-16 | 株式会社東芝 | 電力増幅装置、及び電力増幅装置の制御方法 |
US9871538B2 (en) | 2014-01-16 | 2018-01-16 | Telefonaktiebolaget Lm Ericsson (Publ) | Method and apparatus for adjusting peak power capability |
EP3490141B1 (en) | 2014-08-11 | 2020-04-01 | Huawei Technologies Co., Ltd. | Power amplifier, radio remote unit, and base station |
JP2016042700A (ja) * | 2014-08-17 | 2016-03-31 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | モード又は周波数によって分離された入力に対応する電力増幅器インターフェース |
ITUB20153048A1 (it) * | 2015-08-10 | 2017-02-10 | Itelco Broadcast S R L | Struttura di modulo amplificatore di potenza per radiofrequenza a doppio stadio, e amplificatore modulare che utilizza tali moduli |
CN106253862A (zh) * | 2016-08-04 | 2016-12-21 | 成都博思微科技有限公司 | 一种高等效带宽和高增益线性度的放大电路 |
US11515617B1 (en) | 2019-04-03 | 2022-11-29 | Micro Mobio Corporation | Radio frequency active antenna system in a package |
CN111682852B (zh) * | 2020-06-23 | 2024-01-26 | 重庆嘉旦微电子有限公司 | 基于功分比和相位可调电桥的高效率三路多尔蒂功率放大器 |
CN116918248B (zh) | 2021-02-18 | 2024-03-19 | 新唐科技日本株式会社 | 高频功率放大器件 |
CN112737530B (zh) * | 2021-04-02 | 2021-06-18 | 成都理工大学 | 一种连续f类放大器 |
US11876489B2 (en) * | 2022-03-15 | 2024-01-16 | Falcomm, Inc. | Dual drive Doherty power amplifier and systems and methods relating to same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1938940A (zh) * | 2004-06-18 | 2007-03-28 | 三菱电机株式会社 | 高效率放大器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5568086A (en) * | 1995-05-25 | 1996-10-22 | Motorola, Inc. | Linear power amplifier for high efficiency multi-carrier performance |
US5886575A (en) * | 1997-09-30 | 1999-03-23 | Motorola, Inc. | Apparatus and method for amplifying a signal |
JP3888603B2 (ja) | 2000-07-24 | 2007-03-07 | 株式会社ルネサステクノロジ | クロック生成回路および制御方法並びに半導体記憶装置 |
US6982593B2 (en) * | 2003-10-23 | 2006-01-03 | Northrop Grumman Corporation | Switching amplifier architecture |
JP2006500884A (ja) | 2002-09-20 | 2006-01-05 | トライクウィント セミコンダクター,インコーポレーテッド | 切換可能な可変出力電力レベルを有する飽和電力増幅器 |
US7009454B2 (en) * | 2004-01-20 | 2006-03-07 | Anadigics Inc. | Method and apparatus for optimization of amplifier with adjustable output range |
WO2006006119A1 (en) * | 2004-07-08 | 2006-01-19 | Koninklijke Philips Electronics N.V. | Integrated doherty type amplifier arrangement with integrated feedback |
US7336127B2 (en) * | 2005-06-10 | 2008-02-26 | Rf Micro Devices, Inc. | Doherty amplifier configuration for a collector controlled power amplifier |
KR100756041B1 (ko) * | 2005-06-27 | 2007-09-07 | 삼성전자주식회사 | 믹서를 이용한 도허티 증폭장치 및 송신기 |
JP2007053540A (ja) * | 2005-08-17 | 2007-03-01 | Nec Corp | ドハティ型増幅器 |
JP2008035487A (ja) * | 2006-06-19 | 2008-02-14 | Renesas Technology Corp | Rf電力増幅器 |
US7541866B2 (en) | 2006-09-29 | 2009-06-02 | Nortel Networks Limited | Enhanced doherty amplifier with asymmetrical semiconductors |
US20080122542A1 (en) * | 2006-11-27 | 2008-05-29 | Gregory Bowles | Enhanced amplifier with auxiliary path bias modulation |
-
2008
- 2008-09-30 US US12/241,424 patent/US7619468B1/en not_active Expired - Fee Related
-
2009
- 2009-09-28 JP JP2011528149A patent/JP2012504355A/ja active Pending
- 2009-09-28 EP EP09817132.5A patent/EP2342817B1/en not_active Not-in-force
- 2009-09-28 CN CN200980138079.1A patent/CN102165686B/zh not_active Expired - Fee Related
- 2009-09-28 BR BRPI0919134A patent/BRPI0919134A2/pt not_active IP Right Cessation
- 2009-09-28 WO PCT/CA2009/001354 patent/WO2010037212A1/en active Application Filing
- 2009-09-28 KR KR1020117009975A patent/KR101349626B1/ko not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1938940A (zh) * | 2004-06-18 | 2007-03-28 | 三菱电机株式会社 | 高效率放大器 |
Also Published As
Publication number | Publication date |
---|---|
WO2010037212A1 (en) | 2010-04-08 |
EP2342817A4 (en) | 2012-06-13 |
JP2012504355A (ja) | 2012-02-16 |
CN102165686A (zh) | 2011-08-24 |
BRPI0919134A2 (pt) | 2015-12-08 |
EP2342817B1 (en) | 2015-01-14 |
KR20110066209A (ko) | 2011-06-16 |
EP2342817A1 (en) | 2011-07-13 |
KR101349626B1 (ko) | 2014-01-09 |
US7619468B1 (en) | 2009-11-17 |
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