CN102157641B - Method for manufacture LED (light-emitting diode) chip - Google Patents
Method for manufacture LED (light-emitting diode) chip Download PDFInfo
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- CN102157641B CN102157641B CN201110069368A CN201110069368A CN102157641B CN 102157641 B CN102157641 B CN 102157641B CN 201110069368 A CN201110069368 A CN 201110069368A CN 201110069368 A CN201110069368 A CN 201110069368A CN 102157641 B CN102157641 B CN 102157641B
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- silver
- led chip
- sapphire substrate
- colored
- annealing
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Abstract
The invention relates to the technical field of LED lighting lamp, specifically to a method for manufacture LED chip. The method for manufacture LED chip related by the invention manufactures LED chip by the procedures of evaporating a silver film, cooling, fast annealing the silver film, cooling, evaporating a TiO2/SiO2 reflecting layer and cooling; the LED chip manufactured according to the procedures mainly uses the silver particles between the reflecting layer and a sapphire substrate for increasing the roughness of a reflecting part, so that the lights emitted by an active layer is changed into a diffuse reflection state from a mirror reflection state, and the lights penetrating through the light-emitting surface of the LED chip are finally strengthened; in such way, the method for manufacturing the LED chip can effectively manufacture the LED chip with high light-emitting efficiency and high brightness.
Description
Technical field
The present invention relates to the LED field of illumination lamp technology, relate in particular to a kind of preparation method of led chip.
Background technology
Cause the whole world to face the threat of energy shortage and earth environment great change because of excessively developing, the novel and light source energy-saving and carbon-saving notion becomes one of 21st century illumination most important.Light-emitting diode (Light Emitting Diode---the LED) representative of the green illumination light source of beyond doubt tool potentiality to be exploited; Advantages such as light-emitting diode has that volume is little, caloric value is low, power consumption is little, the life-span is long, reaction speed is fast, environmental protection and high brightness.Rely on above-mentioned many-sided advantage, light-emitting diode is used more and more general and range of application diversification day by day, like traffic lights, automobile-used lighting apparatus, outdoor display, LCD TV and mobile phone backlight etc.
Along with the led chip technology of preparing constantly improves, how to improve brightness and become the important indicator that LED gets into lighting field, wherein can not be ignored especially with gallium nitride (GaN) series LED institute role.Though existing LED lamp can be realized illumination functions to a certain extent, the ubiquity light extraction efficiency is not high, and defectives such as further raising are demanded in brightness urgently.So, provide a kind of method for preparing the led chip of high light-emitting efficiency and brightness to become the key that addresses the above problem.
Summary of the invention
The objective of the invention is to the deficiency of prior art and a kind of preparation method that can prepare the led chip of high light-emitting efficiency and high brightness is provided.
For achieving the above object, the present invention realizes through following technical scheme.
A kind of preparation method of led chip includes following steps:
A, growth there is the sapphire substrate of epitaxial wafer and puts into evaporator as the silver-colored material of vapor deposition source; The coating apparatus that utilizes physical vaporous deposition and pass through evaporator is at sapphire substrate one side vapor deposition one deck silver film, and this silver film is positioned at the opposition side of epitaxial wafer;
B, treat that silver-colored film vapor deposition finishes after, silver-colored film is cooled to room temperature in the lump with sapphire substrate;
C, cooled silver-colored film is put into quick anneal oven in the lump with sapphire substrate; Set the annealing temperature and the annealing time of quick anneal oven; Wherein annealing temperature is 300 ℃-500 ℃; Annealing time is 5min-20min, carries out heat treated and to the processing of annealing of silver-colored film through quick anneal oven, and the silver-colored accumulation of film after annealing also forms the silver-colored particle on the surface that intersperses among sapphire substrate;
D, will be cooled to room temperature in the lump with sapphire substrate through the silver-colored particle after the annealing processing, silver-colored particle cooling also condenses into solid-state;
E, cooled silver-colored particle is put into evaporator in the lump with sapphire substrate, utilize physical vaporous deposition and the coating apparatus through evaporator on the top layer of silver-colored particle vapor deposition TiO
2/ SiO
2The reflector;
F, treat TiO
2/ SiO
2After the reflector vapor deposition finishes, with TiO
2/ SiO
2The reflector is cooled to room temperature with sapphire substrate.
Wherein, said physical vaporous deposition is evaporation coating method or sputter coating method.
Wherein, the thickness of the silver-colored film described in the step a is 200nm-500nm.
Wherein, sapphire substrate described in the step b and silver-colored film adopt the mode of cooling off with evaporator to be cooled to room temperature.
Wherein, the annealing temperature described in the step c is 400 ℃, and annealing time is 10min.
Wherein, the annealing temperature described in the step c is 500 ℃, and annealing time is 20min.
Wherein, the silver-colored particle grain size size described in the steps d is 50nm-1000nm.
Wherein, sapphire substrate described in the steps d and silver-colored particle adopt the mode of cooling off with quick anneal oven to be cooled to room temperature.
Wherein, the sapphire substrate described in the step f, silver-colored particle and TiO
2/ SiO
2The reflector adopts the mode of cooling off with evaporator to be cooled to room temperature.
Wherein, said TiO
2/ SiO
2The reflector includes the TiO that stacks gradually and be provided with alternately
2Layer and SiO
2Layer.
Beneficial effect of the present invention is: the preparation method of a kind of led chip according to the invention; Include following steps: a, growth is had the sapphire substrate of epitaxial wafer and puts into evaporator as the silver-colored material of vapor deposition source; The coating apparatus that utilizes physical vaporous deposition and pass through evaporator is at sapphire substrate one side vapor deposition one deck silver film, and this silver film is positioned at the opposition side of epitaxial wafer; B, treat that silver-colored film vapor deposition finishes after, silver-colored film is cooled to room temperature in the lump with sapphire substrate; C, cooled silver-colored film is put into quick anneal oven in the lump with sapphire substrate; Set the annealing temperature and the annealing time of quick anneal oven; Wherein annealing temperature is 300 ℃-500 ℃; Annealing time is 5min-20min, carries out heat treated and to the processing of annealing of silver-colored film through quick anneal oven, and the silver-colored accumulation of film after annealing also forms the silver-colored particle on the surface that intersperses among sapphire substrate; D, will be cooled to room temperature in the lump with sapphire substrate through the silver-colored particle after the annealing processing, silver-colored particle cooling also condenses into solid-state; E, cooled silver-colored particle is put into evaporator in the lump with sapphire substrate, utilize physical vaporous deposition and the coating apparatus through evaporator on the top layer of silver-colored particle vapor deposition TiO
2/ SiO
2The reflector; F, treat TiO
2/ SiO
2After the reflector vapor deposition finishes, with TiO
2/ SiO
2The reflector is cooled to room temperature with sapphire substrate.The present invention is successively through vapor deposition silver film---cooling---silver-colored film short annealing---cooling---vapor deposition TiO
2/ SiO
2The reflector---refrigerating work procedure prepares led chip; The led chip that is prepared from according to above-mentioned operation mainly utilizes the silver-colored particle between reflector and the sapphire substrate to increase the roughness of the reflecting part in reflector, and then the light that active layer sends is become diffuse reflection state and the final light that increases the exiting surface that appears led chip by the direct reflection state; So the preparation method of above-mentioned led chip can prepare the led chip of high light-emitting efficiency and high brightness effectively.
Description of drawings
Utilize accompanying drawing to come the present invention is further explained below, but the embodiment in the accompanying drawing does not constitute any restriction of the present invention.
Fig. 1 is the structural representation of the led chip that is prepared from the present invention.
In Fig. 1, include:
1---epitaxial wafer 11---p type semiconductor layer 12---active layer
13---the silver-colored particles of n type semiconductor layer 2---sapphire substrate 3---
4---TiO
2/ SiO
2The reflector.
Embodiment
Come invention is further described below in conjunction with embodiment.
A kind of preparation method of led chip; Include following steps: a, growth is had the sapphire substrate 2 of epitaxial wafer 1 and puts into evaporator as the silver-colored material of vapor deposition source; The coating apparatus that utilizes physical vaporous deposition and pass through evaporator is at sapphire substrate 2 one side vapor deposition one decks silver film, and this silver film is positioned at the opposition side of epitaxial wafer 1; B, treat that silver-colored film vapor deposition finishes after, silver-colored film is cooled to room temperature in the lump with sapphire substrate 2; C, cooled silver-colored film is put into quick anneal oven in the lump with sapphire substrate 2; Set the annealing temperature and the annealing time of quick anneal oven; Wherein annealing temperature is 300 ℃-500 ℃; Annealing time is 5min-20min, carries out heat treated and to the processing of annealing of silver-colored film through quick anneal oven, and the silver-colored accumulation of film after annealing also forms the silver-colored particle 3 on the surface that intersperses among sapphire substrate; D, will be cooled to room temperature in the lump with sapphire substrate 2 through the silver-colored particle 3 after the annealing processing, silver-colored particle 3 coolings also condense into solid-state; E, cooled silver-colored particle 3 is put into evaporator in the lump with sapphire substrate 2, utilize physical vaporous deposition and the coating apparatus through evaporator on the top layer of silver-colored particle 3 vapor deposition TiO2/SiO2 reflector 4; F, treat that TiO2/SiO2 reflector 4 vapor depositions finish after, TiO2/SiO2 reflector 4 is cooled to room temperature with sapphire substrate 2.
Utilizing the present invention to prepare in the process of led chip, the general and epitaxial wafer 1 of the sapphire substrate of outsourcing 2 is connected together, and wherein, epitaxial wafer 1 includes p type semiconductor layer 11, active layer 12 and the n type semiconductor layer 13 that is cascading; The present invention can be used to prepare various types of led chips and the led chip that is not limited only to a certain particular type; Be that the present invention can be used to prepare dissimilar light-emitting diodes such as GaN series LED, GaAs series LED, gallium chloride series LED; For example; When the present invention is used to prepare GaN series LED; N type semiconductor layer 13 is a N type GaN layer, and active layer 12 is the multiple quantum trap luminous layer of InGaN/GaN, and p type semiconductor layer 11 is a P type GaN layer.
The present invention adopts physical vaporous deposition to prepare silver-colored film, and wherein, this physical vaporous deposition mainly comprises evaporation coating method or sputter coating method; For example, when the present invention adopted the mode vapor deposition silver film of the electron beam evaporation in the evaporation coating method, the beam bombardment silver material that is ejected by electron gun also made silver-colored material distillation; Under the effect of the evaporation coating device of evaporator; The silver material is finally by the surface of vapor deposition in sapphire substrate 2, and as shown in Figure 1, silver-colored film vapor deposition is in the opposition side of epitaxial wafer 1.In conjunction with of the influence of prepared silver-colored particle 3 size that form of subsequent anneal operation, be 200nm-500nm through the thickness of the silver-colored film of evaporator vapor deposition to the led chip light extraction efficiency.
At silver-colored film vapor deposition behind sapphire substrate 2; Solidify setting for ease of silver-colored film, promptly need the silver-colored film behind the vapor deposition is cooled to room temperature, wherein; The above-mentioned type of cooling can be cold for air cooling (placing air to cool off), stove (place evaporator and cool off with evaporator) and other types of cooling; Wherein, consider the oxidation of air cooling to silver-colored film top layer, the silver-colored film after the present invention preferentially adopts the cold mode of stove to vapor deposition cools off.
Put into quick anneal oven through cooled silver-colored film in the lump with sapphire substrate 2 and carry out annealing in process; The purpose of annealing in process is to make silver-colored film to become silver-colored particle 3, and in annealing process, silver-colored material change procedure is described below: quick anneal oven is to silver-colored film heating and make its melted by heat form molten condition; Because the Van der Waals force effect between the molecule; The silver liquation gathers and forms the silver-colored particle 3 of bulk in a plurality of positions, wherein, silver-colored particle 3 one sides adhere to the surface of sapphire substrate 2.Wherein, add man-hour utilizing quick anneal oven to anneal, annealing temperature should remain between 300 ℃-500 ℃, and annealing time remains between the 5min-20min; In addition, in conjunction with actual annealing effect, when annealing temperature be 400 ℃, annealing time be 10min and annealing temperature be 500 ℃, when annealing time is 20min, above-mentioned two kinds of situation preferable silver-colored particle 3 of effect that all can obtain to anneal.
After silver-colored particle 3 annealing are shaped; Solidify setting for ease of silver-colored particle 3; Promptly must the silver-colored particle 3 behind the vapor deposition be cooled to room temperature, wherein, the above-mentioned type of cooling can be cold for air cooling, stove (place quick anneal oven and cool off with quick anneal oven) and other types of cooling; Wherein, consider the oxidation of air cooling to silver-colored particle 3 top layers, the silver-colored particle 3 after the present invention preferentially adopts the cold mode of stove to annealing cools off.In addition, have reflecting effect preferably in order to guarantee silver-colored particle 3, through the particle diameter value of cooled silver-colored particle 3 generally between 50nm-1000nm.
After 3 annealing of silver-colored particle and cooling were accomplished, the present invention also must be used to reflect the TiO2/SiO2 reflector 4 of the light that active layer 12 sent at the top layer of silver-colored particle 3 vapor deposition, wherein, and the TiO of TiO2/SiO2 reflector 4 for stacking gradually and being provided with alternately
2Layer and SiO
2Layer; When utilizing evaporator vapor deposition TiO2/SiO2 reflector 4, TiO
2Layer and SiO
2The layer in a certain order successively vapor deposition in the top layer of silver-colored particle 3.The present invention adopts TiO in the prepared TiO2/SiO2 reflector that forms 4
2Layer and SiO
2The version that layer piles up also can realize the effect of comprehensive reflection, and then further reduce going out light loss and improving light extraction efficiency of led chip.In addition; Sapphire substrate 2 after vapor deposition treatment, silver-colored particle 3 and TiO2/SiO2 reflector 4 adopt the mode of cooling off with evaporator to be cooled to room temperature; Certainly, the above-mentioned type of cooling is not construed as limiting the invention, and the present invention can also adopt the mode of air cooling to cool off.
After finishing above-mentioned steps; Led chip also must carry out operations such as electrode preparation, transparency conducting layer preparation and handle and finally be prepared into the complete led chip that can encapsulate; Wherein, electrode preparation, transparency conducting layer preparation section are prior art, do not give unnecessary details here.
Above content is merely preferred embodiment of the present invention, and for those of ordinary skill in the art, according to thought of the present invention, the part that on embodiment and range of application, all can change, this description should not be construed as limitation of the present invention.
Claims (10)
1. the preparation method of a led chip is characterized in that, includes following steps:
A, growth there is the sapphire substrate (2) of epitaxial wafer (1) and puts into evaporator as the silver-colored material of vapor deposition source; The coating apparatus that utilizes physical vaporous deposition and pass through evaporator is at sapphire substrate (2) one side vapor deposition one decks silver film, and this silver film is positioned at the opposition side of epitaxial wafer (1);
B, treat that silver-colored film vapor deposition finishes after, silver-colored film is cooled to room temperature in the lump with sapphire substrate (2);
C, cooled silver-colored film is put into quick anneal oven in the lump with sapphire substrate (2); Set the annealing temperature and the annealing time of quick anneal oven; Wherein annealing temperature is 300 ℃-500 ℃; Annealing time is 5min-20min, carries out heat treated and to the processing of annealing of silver-colored film through quick anneal oven, and the silver-colored accumulation of film after annealing also forms the silver-colored particle (3) on the surface that intersperses among sapphire substrate (2);
D, will be cooled to room temperature in the lump with sapphire substrate (2) through the silver-colored particle (3) after the annealing processing, silver-colored particle (3) is lowered the temperature and is condensed into solid-state;
E, cooled silver-colored particle (3) is put into evaporator in the lump with sapphire substrate (2), utilize physical vaporous deposition and the coating apparatus through evaporator on the top layer of silver-colored particle (3) vapor deposition TiO
2/ SiO
2Reflector (4);
F, treat TiO
2/ SiO
2After reflector (4) vapor deposition finishes, with TiO
2/ SiO
2Reflector (4) is cooled to room temperature with sapphire substrate (2).
2. the preparation method of a kind of led chip according to claim 1, it is characterized in that: said physical vaporous deposition is evaporation coating method or sputter coating method.
3. the preparation method of a kind of led chip according to claim 1, it is characterized in that: the thickness of the silver-colored film described in the step a is 200nm-500nm.
4. the preparation method of a kind of led chip according to claim 1 is characterized in that: sapphire substrate described in the step b (2) and silver-colored film adopt the mode of cooling off with evaporator to be cooled to room temperature.
5. the preparation method of a kind of led chip according to claim 1, it is characterized in that: the annealing temperature described in the step c is 400 ℃, annealing time is 10min.
6. the preparation method of a kind of led chip according to claim 1, it is characterized in that: the annealing temperature described in the step c is 500 ℃, annealing time is 20min.
7. the preparation method of a kind of led chip according to claim 1, it is characterized in that: the size of the silver-colored particle (3) after the annealing described in the steps d is 50nm-1000nm.
8. the preparation method of a kind of led chip according to claim 1 is characterized in that: sapphire substrate described in the steps d (2) and silver-colored particle (3) adopt the mode of cooling off with quick anneal oven to be cooled to room temperature.
9. the preparation method of a kind of led chip according to claim 1 is characterized in that: the sapphire substrate described in the step f (2), silver-colored particle (3) and TiO
2/ SiO
2Reflector (4) adopts the mode of cooling off with evaporator to be cooled to room temperature.
10. the preparation method of a kind of led chip according to claim 1 is characterized in that: said TiO
2/ SiO
2Reflector (4) includes the TiO that stacks gradually and be provided with alternately
2Layer and SiO
2Layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110069368A CN102157641B (en) | 2011-03-22 | 2011-03-22 | Method for manufacture LED (light-emitting diode) chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110069368A CN102157641B (en) | 2011-03-22 | 2011-03-22 | Method for manufacture LED (light-emitting diode) chip |
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|---|---|
| CN102157641A CN102157641A (en) | 2011-08-17 |
| CN102157641B true CN102157641B (en) | 2012-09-05 |
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| CN201110069368A Expired - Fee Related CN102157641B (en) | 2011-03-22 | 2011-03-22 | Method for manufacture LED (light-emitting diode) chip |
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| CN104716240A (en) * | 2015-01-07 | 2015-06-17 | 华灿光电股份有限公司 | LED chip and preparation method thereof |
| CN109166953B (en) * | 2018-07-03 | 2020-04-10 | 华灿光电股份有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN113529023B (en) * | 2021-09-15 | 2021-11-23 | 江苏佳晟精密设备科技有限公司 | Preparation method and equipment of LED chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100570406C (en) * | 2007-04-27 | 2009-12-16 | 甘国工 | The safety glass protection that LCD is used and use the LCD of this screen |
| TW201027811A (en) * | 2009-01-12 | 2010-07-16 | Ubilux Optoelectronics Corp | LED and its manufacturing method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100570406C (en) * | 2007-04-27 | 2009-12-16 | 甘国工 | The safety glass protection that LCD is used and use the LCD of this screen |
| TW201027811A (en) * | 2009-01-12 | 2010-07-16 | Ubilux Optoelectronics Corp | LED and its manufacturing method |
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