CN104716240A - LED chip and preparation method thereof - Google Patents
LED chip and preparation method thereof Download PDFInfo
- Publication number
- CN104716240A CN104716240A CN201510005273.XA CN201510005273A CN104716240A CN 104716240 A CN104716240 A CN 104716240A CN 201510005273 A CN201510005273 A CN 201510005273A CN 104716240 A CN104716240 A CN 104716240A
- Authority
- CN
- China
- Prior art keywords
- sublayer
- cup
- substrate
- reflector
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
The invention discloses an LED chip and a preparation method thereof, and belongs to the field of LEDs. The LED chip comprises a substrate, a GaN buffer layer, an N-type layer, a light-emitting layer, a P-type layer, a transparent conducting layer, an N electrode and a P electrode, wherein the GaN buffer layer, the N-type layer, the light-emitting layer, the P-type layer and the transparent conducting layer are sequentially grown on the substrate, and the N electrode and the P electrode are grown on the N-type layer and the P-type layer respectively. The chip further comprises a reflection cup, and a cup-shaped groove is formed in the substrate. The reflection cup is arranged in the cup-shaped groove and is placed between the substrate and the GaN buffer layer, and a cup opening of the reflection cup faces the GaN buffer layer. The method comprises the steps that the substrate is provided, and the cup-shaped groove is formed in the substrate; the reflection cup, the GaN buffer layer, the N-type layer, the light-emitting layer and the P-type layer are sequentially grown in the cup-shaped groove, and an LED epitaxial wafer is obtained; the cup opening of the reflection cup faces the GaN buffer layer; the transparent conducting layer is grown on the P-type layer of the LED epitaxial wafer, and the N electrode and the P electrode are grown on the N-type layer and the P-type layer respectively; the LED epitaxial wafer is split, and accordingly the LED chip is obtained.
Description
Technical field
The present invention relates to light-emitting diode (Light-Emitting Diode is called for short LED) field, particularly a kind of LED chip and preparation method thereof.
Background technology
LED has the characteristics such as the life-span is long and energy-conservation, is nowadays widely used in every field.Along with improving constantly of requiring LED, high light efficiency and low cost become the important development direction of LED.
LED generally comprises LED chip and packaging body.LED chip comprises substrate and the epitaxial loayer at Grown.Epitaxial loayer comprises N-type layer, quantum well layer (also claiming luminescent layer), P-type layer and the N electrode be separately positioned in N-type layer and P-type layer and P electrode that set gradually.When applying positive and negative voltage respectively to make LED in running order in N-type layer and P-type layer, the hole in P-type layer and the electronics of N-type layer compound and luminous in quantum well layer.Wherein, quantum well layer send only to surrounding injection, the light in directive substrate direction absorbs by the epitaxial loayer of process, substrate and packaging body.The part that packaging body is close to substrate floor is arranged to reflective surface by prior art, when light reaches reflective surface, will be reflected back.
Realizing in process of the present invention, inventor finds that prior art at least exists following problem:
The light that quantum well layer sends needs just can reach reflective surface through after epitaxial loayer and substrate successively, is then reflected back, again after epitaxial loayer and substrate just from LED out, the distance of optical transport is long.The transmission of long distance will cause light to be absorbed in a large number in LED inside, seriously reduce light efficiency.
Summary of the invention
In order to solve the problem of prior art, embodiments provide a kind of LED chip and preparation method thereof.Described technical scheme is as follows:
On the one hand, the invention provides a kind of light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit comprises substrate, the GaN resilient coating, N-type layer, luminescent layer, P-type layer and the transparency conducting layer that grow successively over the substrate and the N electrode grown in described N-type layer and described P-type layer respectively and P electrode
Described light-emitting diode chip for backlight unit also comprises reflector, described substrate is provided with the cup-shaped groove matched with described reflector, described reflector is located in described cup-shaped groove and between described substrate and described GaN resilient coating, the rim of a cup of described reflector is towards described GaN resilient coating.
In the first embodiment, described reflector comprises covering the first sublayer over the substrate, and described first sublayer is made up of Ag, and thickness is 0.1um ~ 1um.
In this second embodiment, on described first sublayer, the face of described substrate is alligatoring face dorsad.
In the third embodiment, described reflector also comprises the second sublayer be arranged between described first sublayer and described GaN resilient coating, and described second sublayer is made up of AlN, and thickness is 0.01um ~ 1um.
In the 4th execution mode, described luminescent layer is arranged on the cup of described reflector along below.
In the 5th execution mode, the inwall of the cup-shaped groove on described substrate is alligatoring inwall.
On the other hand, the invention provides a kind of preparation method of light-emitting diode chip for backlight unit, described method comprises:
Substrate is provided, and prepares cup-shaped groove over the substrate;
In described cup-shaped groove, grow reflector, GaN resilient coating, N-type layer, luminescent layer and P-type layer successively, obtain LED epitaxial slice; The rim of a cup of described reflector is towards described GaN resilient coating;
The P-type layer of described LED epitaxial slice grows transparency conducting layer, and grow N electrode and P electrode respectively in described N-type layer and described P-type layer;
Sliver is carried out to described LED epitaxial slice, obtains described light-emitting diode chip for backlight unit.
In the first embodiment, described reflector comprises covering the first sublayer over the substrate, describedly in cup-shaped groove, grows reflector, comprising:
By evaporation mode evaporation first sublayer in described cup-shaped groove, described first sublayer is made up of Ag, and the thickness of described first sublayer is 0.1um-1um.
In this second embodiment, described method also comprises:
Evaporation there is is the substrate arrangement of described first sublayer under vacuum or nitrogen atmosphere, and through 400 DEG C-600 DEG C annealing, make the surface balling-up after annealing of described first sublayer, to form coarse surface.
In the third embodiment, described reflector also comprises the second sublayer be arranged between described first sublayer and described GaN resilient coating, and described method also comprises:
On described first sublayer, deposit the second sublayer by the method for physics or chemical deposition, described second sublayer is made up of AlN, and the thickness of described second sublayer is 0.01um ~ 1um.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By reflector being located between substrate and GaN resilient coating, this reflector distance luminescent layer is closer, almost press close to the light-emitting zone of LED, the light that luminescent layer is sent just can be gone out by reflective cup reflects through short-range transmission in LED, thus greatly reduce the absorption of LED component to light, improve the light extraction efficiency of LED chip.Further, because the cup-shaped and rim of a cup of reflector is towards GaN resilient coating, increases the area of reflecting surface, further increase the light extraction efficiency of LED chip.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of light-emitting diode chip for backlight unit that the embodiment of the present invention provides;
Fig. 2 is the flow chart of the preparation method of a kind of light-emitting diode chip for backlight unit that the embodiment of the present invention provides;
Fig. 3 is the flow chart of the preparation method of another light-emitting diode chip for backlight unit that the embodiment of the present invention provides.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Embodiment one
Embodiments provide a kind of light-emitting diode (Light-Emitting Diode, be called for short LED) chip, see Fig. 1, this LED chip comprises N electrode 8 and the P electrode 9 of substrate 1, the GaN resilient coating 3 grown successively on substrate 1, N-type layer 4, luminescent layer 5, P-type layer 6 and transparency conducting layer 7 and growth in N-type layer 4 and P-type layer 6 respectively.
This LED chip also comprises reflector 2, and substrate 1 is provided with cup-shaped groove, and reflector 2 is located in cup-shaped groove and between substrate 1 and GaN resilient coating 3, the rim of a cup of reflector 2 is towards GaN resilient coating 3.
By reflector 2 is located between substrate 1 and GaN resilient coating 3, this reflector 2 is closer apart from luminescent layer 5, almost press close to the light-emitting zone of LED, the light that luminescent layer 5 is sent just can be reflected away by reflector 2 through short-range transmission in LED, thus greatly reduce the absorption of LED component to light, improve the light extraction efficiency of LED chip.Further, because the cup-shaped and rim of a cup of reflector 2 is towards GaN resilient coating 3, the Area comparison of reflecting surface is large, further increases the light extraction efficiency of LED chip.
Wherein, photoetching and etching technics can be adopted to process cup-shaped groove on substrate 1, the cross section of this cup-shaped groove can be inverted trapezoidal.
In first execution mode of the present embodiment, the inwall of the cup-shaped groove on substrate 1 can be alligatoring inwall.Graphical sapphire substrate (Patterned Sapphire Substrate is called for short PSS) technology can be passed through, by the inwall alligatoring of cup-shaped groove.The light sent due to LED is refracted repeatedly in outgoing process, and the path of light outgoing is changed, and therefore, has part light can walk around reflector 2 and is mapped to substrate 1 surface.And light can reflect away by the alligatoring inwall of cup-shaped groove on substrate 1, reduce the absorption of light, improve light outgoing efficiency.
Wherein, luminescent layer 5 can be arranged on the cup of reflector 2 above 2a, and the cup that also can be arranged on reflector 2, along 2a place, can also be arranged on the cup of reflector 2 below 2a.In second execution mode of the present embodiment, luminescent layer 5 is located at the cup of reflector 2 below 2a.When the cup that luminescent layer 5 is located at reflector 2 is below 2a, mean that the light in luminescent layer 5 directive substrate 1 direction will all fall into reflector 2, will the reflection efficiency of reflector 2 be improved like this, thus improve light outgoing efficiency.
Wherein, this reflector 2 comprises covering the first sublayer 21 on substrate 1.First sublayer 21 is for reverberation, and the material of the first sublayer 21 can be the material that reflecting rate is higher, and the reflecting rate of such as Ag, Ag can reach more than 99%.In the 3rd execution mode of the present embodiment, the first sublayer 21 can be made up of Ag, and thickness can be 0.1um ~ 1um.Mode evaporation first sublayer 21 on substrate 1 of evaporation can be adopted.
In the 4th execution mode of the present embodiment, on the first sublayer 21, the face of substrate 1 can be alligatoring face dorsad.On substrate 1 after evaporation first sublayer 21, evaporation can there be is the substrate arrangement of the first sublayer 21 under vacuum or nitrogen atmosphere, and through 400 DEG C-600 DEG C annealing.After annealing, the first sublayer 21 meeting balling-up of evaporation, thus form alligatoring face, this alligatoring face is conducive to the raising of LED light extraction efficiency.
Wherein, reflector 2 also comprises the second sublayer 22 be arranged between the first sublayer 21 and GaN resilient coating 3.Second sublayer 22 is for providing growth basic unit for GaN resilient coating 3, the material of the second sublayer 22 can be the material close with GaN lattice constant, such as AlN.In the 5th execution mode of the present embodiment, the second sublayer 22 can be made up of AlN, and thickness can be 0.01um ~ 1um.One deck AlN can be deposited on the first sublayer 22 by the method for physics or chemical deposition.LED epitaxy defect, as the basic unit of growing GaN resilient coating 3, can be reduced in the second sublayer 22 that employing AlN makes, and reduces the thickness of GaN resilient coating 3, thus saves growth time.
Embodiment two
Embodiments provide a kind of preparation method of light-emitting diode chip for backlight unit, see Fig. 2 and Fig. 3, the method comprises the following steps.
Step 201: substrate 1 is provided, and prepare cup-shaped groove 11 on substrate 1.
Wherein, the size of this cup-shaped groove 11 and the size of LED chip match.Photoetching and etching technics can be adopted to process cup-shaped groove 11 on substrate 1, and the cross section of this cup-shaped groove 11 can be inverted trapezoidal.
Alternatively, the inwall of cup-shaped groove 11 can be alligatoring inwall.Can PSS technology be passed through, by the inwall alligatoring of cup-shaped groove 11.
Step 202: by evaporation mode evaporation first sublayer 21 in cup-shaped groove 11.
Wherein, the first sublayer 21 is for reverberation.First sublayer 21 can be made up of Ag, and the thickness of the first sublayer 21 can be 0.1um-1um.
Wherein, this step 202 also comprises, and evaporation is had the substrate arrangement of the first sublayer 21 under vacuum or nitrogen atmosphere, and through 400 DEG C-600 DEG C annealing, makes the surface balling-up after annealing of the first sublayer 21, to form coarse surface.
Step 203: deposit the second sublayer 22 by the method for physics or chemical deposition on the first sublayer 21.
Wherein, the second sublayer 22 is for providing growth basic unit for GaN resilient coating 3.Second sublayer 22 can be made up of AlN, and the thickness of the second sublayer 22 can be 0.01um ~ 1um.
Achieved by step 202 and step 203, in cup-shaped groove 11, grow reflector 2.Wherein, the rim of a cup of reflector 2 is towards GaN resilient coating 3.Reflector 2 comprises covering the first sublayer 21 on substrate 1 and the second sublayer 22 be arranged between the first sublayer 21 and GaN resilient coating 3.
Step 204: growing GaN resilient coating 3, N-type layer 4, luminescent layer 5 and P-type layer 6 successively in reflector 2, obtain LED.
Wherein, the mode of growing GaN resilient coating 3, N-type layer 4, luminescent layer 5 and P-type layer 6 can adopt existing growth pattern, and the present embodiment is not restricted.
Achieved by step 202 ~ step 204, in cup-shaped groove 11, grow reflector 2, GaN resilient coating 3, N-type layer 4, luminescent layer 5 and P-type layer 6 successively, obtain LED.
Step 205: grow transparency conducting layer 7 in the P-type layer 6 of LED, and N electrode 8 and P electrode 9 is grown respectively in N-type layer 4 and P-type layer 6.
Wherein, growth transparency conducting layer 7, and the mode growing N electrode 8 and P electrode 9 in N-type layer 4 and P-type layer 6 respectively can adopt existing growth pattern, the present embodiment is not restricted.
Step 206: sliver is carried out to LED, obtains LED chip.
Wherein, sliver means can adopt existing sliver means, and the present embodiment is not restricted.
The embodiment of the present invention is by being located between substrate and GaN resilient coating by reflector, this reflector distance luminescent layer is closer, almost press close to the light-emitting zone of LED, the light that luminescent layer is sent just can be gone out by reflective cup reflects through short-range transmission in LED, thus greatly reduce the absorption of LED component to light, improve the light extraction efficiency of LED chip.Further, because the cup-shaped and rim of a cup of reflector is towards GaN resilient coating, increases the area of reflecting surface, further increase the light extraction efficiency of LED chip.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit comprises substrate, the GaN resilient coating, N-type layer, luminescent layer, P-type layer and the transparency conducting layer that grow successively over the substrate and the N electrode grown in described N-type layer and described P-type layer respectively and P electrode, it is characterized in that
Described light-emitting diode chip for backlight unit also comprises reflector, described substrate is provided with the cup-shaped groove matched with described reflector, described reflector is located in described cup-shaped groove and between described substrate and described GaN resilient coating, the rim of a cup of described reflector is towards described GaN resilient coating.
2. light-emitting diode chip for backlight unit according to claim 1, is characterized in that, described reflector comprises covering the first sublayer over the substrate, and described first sublayer is made up of Ag, and thickness is 0.1um ~ 1um.
3. light-emitting diode chip for backlight unit according to claim 2, is characterized in that, on described first sublayer, the face of described substrate is alligatoring face dorsad.
4. light-emitting diode chip for backlight unit according to claim 2, is characterized in that, described reflector also comprises the second sublayer be arranged between described first sublayer and described GaN resilient coating, and described second sublayer is made up of AlN, and thickness is 0.01um ~ 1um.
5. light-emitting diode chip for backlight unit according to claim 1, is characterized in that, described luminescent layer is arranged on the cup of described reflector along below.
6. light-emitting diode chip for backlight unit according to claim 1, is characterized in that, the inwall of the cup-shaped groove on described substrate is alligatoring inwall.
7. a preparation method for light-emitting diode chip for backlight unit, is characterized in that, described method comprises:
Substrate is provided, and prepares cup-shaped groove over the substrate;
In described cup-shaped groove, grow reflector, GaN resilient coating, N-type layer, luminescent layer and P-type layer successively, obtain LED epitaxial slice; The rim of a cup of described reflector is towards described GaN resilient coating;
The P-type layer of described LED epitaxial slice grows transparency conducting layer, and grow N electrode and P electrode respectively in described N-type layer and described P-type layer;
Sliver is carried out to described LED epitaxial slice, obtains described light-emitting diode chip for backlight unit.
8. method according to claim 7, is characterized in that, described reflector comprises covering the first sublayer over the substrate, describedly in cup-shaped groove, grows reflector, comprising:
By evaporation mode evaporation first sublayer in described cup-shaped groove, described first sublayer is made up of Ag, and the thickness of described first sublayer is 0.1um-1um.
9. method according to claim 8, is characterized in that, described method also comprises:
Evaporation there is is the substrate arrangement of described first sublayer under vacuum or nitrogen atmosphere, and through 400 DEG C-600 DEG C annealing, make the surface balling-up after annealing of described first sublayer, to form coarse surface.
10. method according to claim 8, is characterized in that, described reflector also comprises the second sublayer be arranged between described first sublayer and described GaN resilient coating, and described method also comprises:
On described first sublayer, deposit the second sublayer by the method for physics or chemical deposition, described second sublayer is made up of AlN, and the thickness of described second sublayer is 0.01um ~ 1um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510005273.XA CN104716240A (en) | 2015-01-07 | 2015-01-07 | LED chip and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510005273.XA CN104716240A (en) | 2015-01-07 | 2015-01-07 | LED chip and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104716240A true CN104716240A (en) | 2015-06-17 |
Family
ID=53415379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510005273.XA Pending CN104716240A (en) | 2015-01-07 | 2015-01-07 | LED chip and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104716240A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1964090A (en) * | 2005-11-08 | 2007-05-16 | 夏普株式会社 | Nitride-based semiconductor device and production method thereof |
| CN1976066A (en) * | 2003-09-05 | 2007-06-06 | 晶元光电股份有限公司 | Luminous element with micro-reflective structural carrier |
| US20080290360A1 (en) * | 2005-12-08 | 2008-11-27 | Electronics And Telecommunications Research Institute | Silicon-Based Light Emitting Diode Using Side Reflecting Mirror |
| CN101820040A (en) * | 2010-05-11 | 2010-09-01 | 武汉迪源光电科技有限公司 | Light-emitting diode |
| CN102157641A (en) * | 2011-03-22 | 2011-08-17 | 东莞市福地电子材料有限公司 | Method for manufacture LED (light-emitting diode) chip |
-
2015
- 2015-01-07 CN CN201510005273.XA patent/CN104716240A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1976066A (en) * | 2003-09-05 | 2007-06-06 | 晶元光电股份有限公司 | Luminous element with micro-reflective structural carrier |
| CN1964090A (en) * | 2005-11-08 | 2007-05-16 | 夏普株式会社 | Nitride-based semiconductor device and production method thereof |
| US20080290360A1 (en) * | 2005-12-08 | 2008-11-27 | Electronics And Telecommunications Research Institute | Silicon-Based Light Emitting Diode Using Side Reflecting Mirror |
| CN101820040A (en) * | 2010-05-11 | 2010-09-01 | 武汉迪源光电科技有限公司 | Light-emitting diode |
| CN102157641A (en) * | 2011-03-22 | 2011-08-17 | 东莞市福地电子材料有限公司 | Method for manufacture LED (light-emitting diode) chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104638068B (en) | A kind of substrat structure and preparation method thereof being used for the growth of III-V group-III nitride | |
| CN100379042C (en) | Substrate structure for light-emitting diode tube core and method for making same | |
| CN100495750C (en) | Gallium nitride based LED epitaxial slice structure and method for preparing the same | |
| CN102709422A (en) | Semiconductor light-emitting device and preparation method thereof | |
| CN102214745B (en) | Manufacturing method of gallium nitride based semiconductor luminescent device | |
| CN102244168A (en) | LED (light emitting diode) and manufacturing method thereof | |
| CN109786524A (en) | A kind of LED epitaxial layer and preparation method thereof with novel PSS structure | |
| CN103700735A (en) | Light-emitting diode and manufacturing method thereof | |
| CN103187499A (en) | Light-emitting diode and manufacturing method thereof | |
| CN105098004A (en) | Growth method for light-emitting diode epitaxial wafer and epitaxial wafer | |
| CN103840041A (en) | Manufacturing method of composite substrate structure used for nitride growth | |
| KR100697829B1 (en) | Manufacturing method of light emitting element and light emitting element manufactured by this method | |
| CN102931308B (en) | Preparation method of light emitting diode with photonic crystals with gradually-changed radius | |
| CN103208568A (en) | Nitride light-emitting diode and manufacturing method | |
| CN102983231B (en) | There is the manufacture method of the light-emitting diode in cubic circulus reflector | |
| CN104103727A (en) | LED chip capable of improving quantum efficiency, and preparation method thereof | |
| CN104716240A (en) | LED chip and preparation method thereof | |
| CN102683521B (en) | The manufacture method of light-emitting diode | |
| CN104576864A (en) | GaN-based light-emitting diode with novel emergent light structure and manufacturing method for GaN-based light-emitting diode | |
| CN103050584B (en) | Method for preparing light-emitting diode chip | |
| CN108155271B (en) | Light emitting diode chip and preparation method thereof | |
| CN2591781Y (en) | Illuminating device for gallium nitride base III-V group compound semiconductor LED | |
| RU2485630C2 (en) | Led manufacture method | |
| KR100774995B1 (en) | VERTICAL TYPE LIGHT EMITTING DIODE WITH Zn COMPOUND LAYER AND METHOD FOR MAKING THE SAME DIODE | |
| CN103633198A (en) | LED (light-emitting diode) chip manufacturing method and LED chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150617 |
|
| RJ01 | Rejection of invention patent application after publication |