CN102157423A - Substrate mounting table and method for manufacturing the same, and substrate processing apparatus - Google Patents
Substrate mounting table and method for manufacturing the same, and substrate processing apparatus Download PDFInfo
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- CN102157423A CN102157423A CN2010105762643A CN201010576264A CN102157423A CN 102157423 A CN102157423 A CN 102157423A CN 2010105762643 A CN2010105762643 A CN 2010105762643A CN 201010576264 A CN201010576264 A CN 201010576264A CN 102157423 A CN102157423 A CN 102157423A
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- bismuth
- sputtered films
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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Abstract
The invention provides a mounting table which may not damage substrates and can effectively prevent etching pits. The mounting table (5A) comprises a basic material (7) formed by conductive materials such as aluminium or stainless steel (SUS) and an insulation film (8) arranged on the basic material (7). The upper surface of the insulation film (8) is a substrate mounting surface(50) for mounting FPD glass substrateS (S). The substrate mounting surface(50) comprises a rough part (51) with a rough surface of which the surface roughness Ra ranging from 2 micrometers to 6 micrometers and a smooth part (53) encircling the rough part (51) and having a surface roughness Ra less than 2 micrometers.
Description
Technical field
The present invention relates to substrate-placing platform and the manufacture method and the substrate board treatment of mounting substrate.
Background technology
In the manufacturing process of flat-panel monitor (FPD), implement plasma etch process for substrate as handled object.Plasma etch process is for example in the container handling that disposes pair of parallel electroplax electrode (upper and lower electrode), mounting substrate on the mounting table that plays a role as lower electrode forms high-frequency electric field thereby apply High frequency power at least one side's electrode between electrode.Form the plasma of handling gas by this high-frequency electric field, the material membrane on the substrate is carried out etch processes by this plasma.If repeat plasma etch process, then can produce the etching product, these products are attached to the mounting table surface and accumulate.When the surface of mounting table is even surface, between the back side of substrate and mounting table, produce across the zone of attachment, and do not exist between the zone of attachment and producing difference aspect heat conductivity and the conductivity.Its result forms high part of etch-rate and low part in the surface of substrate, thereby generates the etching spot.In addition, sometimes since the attachment substrate sticking on mounting table.
In order to prevent from the etching spot, know altogether to have the mounting table that is provided with the embossing shape on the surface.For example in patent documentation 1, by being set, end face kept the interval on the surface of substrate and mounting table on the surface of mounting table, even also can prevent to produce the etching spot at the surface of mounting table generation attachment by a plurality of protuberances of alligatoring.In addition, in patent documentation 1, proposed around mounting table, to form level and smooth platform portion, made mounting table have time spent of doing, improved the scheme of heat conduction efficiency by heat-conducting medium as electrode for electrostatic attraction.
In addition, in patent documentation 2, from the viewpoint that prevents that substrate is attached on the mounting table, raising suppresses particle and technology stability, the surface that has proposed the mounting table that article on plasma body CVD uses is carried out blasting treatment and is formed jog, make surface roughness Ra below 8 μ m more than the 1 μ m, further carry out the scheme that the precipitous projection of protuberance is removed in grinding chemistry, electrochemical and/or mechanical then.
Patent documentation 1: TOHKEMY 2006-351949 communique
Patent documentation 2: Japanese kokai publication hei 10-340896 communique
Summary of the invention
Be provided with from the teeth outwards on the mounting table of protuberance of inferior line shape since with the contacting of substrate to the some contact, so exist stress to concentrate on the contact site, substrate is caused the problem of damage.On the other hand, if the whole face of mounting table is become alligatoring face, when mounting table is played a role as electrode for electrostatic attraction, have and supply with heat-conducting medium to the rear side of substrate and become unstable, the control heat conduction efficiency become difficulty, produce the hidden danger of etching spot in addition.
The present invention proposes in view of above-mentioned actual conditions, and its problem is to provide to the substrate not damaged, can prevents to produce the mounting table of etching spot effectively.
Substrate-placing platform of the present invention comprises: base material and cover the dielectric film of this base material.Form the substrate-placing face of mounting substrate by described dielectric film; And have on this substrate-placing face surface roughness Ra be more than the 2 μ m alligatoring portion below the 6 μ m and the surface roughness Ra that around described alligatoring portion, is provided with less than the partes glabra of 2 μ m.
In addition, substrate-placing platform of the present invention is by the middle body of described alligatoring portion supporting substrate, by the peripheral part of described partes glabra supporting substrate.In addition, the preferred described at least alligatoring of substrate-placing platform of the present invention portion is formed by the material of the hardness below the hardness with described substrate.
In addition, the preferred described dielectric film of substrate-placing platform of the present invention second sputtered films of bismuth that has first sputtered films of bismuth that forms by spraying plating and form in the mode of at least a portion of covering described first sputtered films of bismuth by spraying plating; Described alligatoring portion is at described second sputtered films of bismuth of the described first sputtered films of bismuth superimposed layer.In this case, the surface of described partes glabra is preferably formed by described first sputtered films of bismuth.In addition, described second sputtered films of bismuth is preferably formed by the material of the hardness below the hardness with described substrate.Under this situation, the material of described first sputtered films of bismuth and described second sputtered films of bismuth can be different, and described second sputtered films of bismuth can be formed by the material of the hardness below the hardness with described first sputtered films of bismuth.
In addition, substrate-placing platform of the present invention preferably has the conductive layer that is embedded in the described dielectric film, has the Electrostatic Absorption function.
Substrate board treatment of the present invention has above-mentioned any substrate-placing platform.
The manufacture method of substrate-placing platform of the present invention is when substrate is implemented to handle, and is used for the manufacture method of the substrate-placing platform of mounting substrate, and it comprises: grind the dielectric film of covering substrates, form the grinding step of surface roughness Ra less than the even surface of 2 μ m; With surface for the described dielectric film after grinding, leaving the mode of even surface in the zone of the periphery of substrate-placing face, the zone of the middle body of described substrate-placing face is implemented blasting treatment, formed surface roughness Ra is the alligatoring operation of the alligatoring portion below the 6 μ m more than the 2 μ m.
The manufacture method of substrate-placing platform in another aspect of this invention is when substrate is implemented to handle, the manufacture method that is used for the substrate-placing platform of mounting substrate, it comprises: grind the dielectric film of covering substrates, form the grinding step of surface roughness Ra less than the even surface of 2 μ m; To the surface of the described dielectric film after grinding, in the zone of the periphery of substrate-placing face, leaving the mode of even surface, blasting treatment is implemented in the zone of the middle body of described substrate-placing face made it subtract the operation of film; With to subtracting the zone of the described middle body behind the film, forming surface roughness Ra by spraying plating is the operation of the sputtered films of bismuth below the 6 μ m more than the 2 μ m.
The preferred described dielectric film of the manufacture method of substrate-placing platform of the present invention is the sputtered films of bismuth that forms by spraying plating.
Substrate-placing platform of the present invention constitutes, have on the substrate-placing face surface roughness Ra be more than the 2 μ m alligatoring portion below the 6 μ m and the surface roughness Ra that around alligatoring portion, is provided with less than the even surface of 2 μ m.In alligatoring portion because by small concavo-convex can multi-point support, so stress is disperseed, reduce the wounded substrate back side.In addition, have small concavo-convex alligatoring portion, also be difficult to planarization even produce attachment, thus can suppress since attachment cause from substrate-placing platform to the pyroconductivity of substrate and the change of electrical efficiency.Therefore, can improve processing inhomogeneous etc. of etching spot etc. for example.In addition, support owing to being close to substrate,, for example, when the importing heat-conducting medium carries out adjustment in this space, can improve heat transfer efficiency so can more easily form confined space in the back side of substrate one side at partes glabra.
Description of drawings
Fig. 1 is the vertical view of the mounting table of first execution mode of the present invention.
Fig. 2 is the sectional view that the direction of arrow of the II-II line along Fig. 1 is observed.
Fig. 3 is the major part sectional view that the structure of the near surface of the mounting table of Fig. 2 is amplified expression.
Fig. 4 is the figure of manufacturing process of the mounting table of explanation first execution mode of the present invention.
Fig. 5 is the figure of the operation of explanation after Fig. 4.
Fig. 6 is the sectional view of the mounting table of second execution mode of the present invention.
Fig. 7 is the major part sectional view that the structure of the near surface of the mounting table of Fig. 6 is amplified expression.
Fig. 8 is the figure of manufacturing process of the mounting table of explanation second execution mode of the present invention.
Fig. 9 is the figure of the operation of explanation after Fig. 8.
Figure 10 is the figure of the state of the dielectric film after the expression alligatoring.
Figure 11 is the major part sectional view that the structure of the near surface of the mounting table after the alligatoring is amplified expression.
Figure 12 is the figure that the operation of the Figure 10 that continues is described.
Figure 13 is the summary sectional view of an example of the expression plasma-etching apparatus that is suitable for substrate-placing platform of the present invention.
Figure 14 is the summary sectional view of another example of the expression plasma-etching apparatus that is suitable for substrate-placing platform of the present invention.
Symbol description
1 container handling 1a ground wall 1b
1, 1b
2 Sidewall 1c lid 3 seal members
13 insulating material, 5 mounting tables, 7 base materials, 8 dielectric films, 15 spray heads
15a gaseous diffusion space 15b gas squit hole 17 gas introduction ports
19 body supply pipe 21 valves 23 mass flow controllers of regulating the flow of vital energy
25 gas supply sources, 27 exhausts opening 29 blast pipes 31 exhaust apparatus
33 substrates are carried and are encircled 39 supply lines with opening 35 gate valve 37O shapes
41 adaptations (M.B.), 43 high frequency electric sources, 45 power supply opening 50 substrate-placing faces
51 alligatoring portions, 53 partes glabras, 100,101 plasma-etching apparatus S substrates
Embodiment
First execution mode
Followingly embodiments of the present invention are described in detail with reference to accompanying drawing.Fig. 1 is the vertical view as the mounting table 5A of the substrate-placing platform of first execution mode of the present invention.Fig. 2 is the sectional view that the direction of arrow of the II-II line from Fig. 1 is observed.In addition, Fig. 3 amplifies the major part sectional view of expression with the structure of the surperficial annex of the mounting table 5A of the part of the dotted line in Fig. 2.
The dielectric film 8 that mounting table 5A has base material 7 and is provided with on base material 7.Base material 7 is for example formed by the conductive material of aluminium or stainless steel (SUS) etc.The upper surface of dielectric film 8 for example is the substrate-placing face 50 of glass substrate (following be called separately " the substrate ") S that uses of mounting FPD.Substrate-placing face 50 has alligatoring portion 51 that surface roughness Ra is the following rough surface of the above 6 μ m of 2 μ m and with the surface roughness Ra of surrounding around this alligatoring portion 51 partes glabra 53 less than 2 μ m.
The alligatoring portion 51 of the dielectric film 8 of the upper surface of mounting table 5A has small jog as shown in Figure 3.In alligatoring portion 51, can be on its protuberance and substrate S multiple spot supporting substrate S contiguously.Its result can prevent from damage is caused at the back side of substrate.In addition, though since etched reaction product or particle etc. attached in the alligatoring portion 51, small concavo-convex former thereby be difficult to become flat surfaces because of existing, can suppress the etching spot.The surface roughness Ra of alligatoring portion 51 is below the above 6 μ m of 2 μ m, is preferably below the above 4.5 μ m of 2.5 μ m.If the surface of alligatoring portion 51 is surface roughness Ra even surfaces less than 2 μ m on mounting table 5A, then owing to repeat etching work procedure and on the surface of dielectric film 8, adhere to and pile up the etching product.Because this deposit, in the surface of substrate S, become inhomogeneous etc. from mounting table 5A to the heat conduction of substrate S, may generate the etching spot.In addition, the surface roughness Ra of alligatoring portion 51 surpasses 6 μ m and then has difficulty in processing, and if surface roughness Ra is excessive, then tails off with the contact point of substrate and damages easily, is difficult to guarantee enough withstand voltage propertiess of dielectric film 8 sometimes.
In addition, the surface roughness Ra of the surperficial 53a of partes glabra 53 is less than 2 μ m, below the above 1.5 μ m of preferred 0.4 μ m.Because the surface roughness Ra of the surperficial 53a of partes glabra 53 is less than 2 μ m, so on mounting table 5A, the back side of the periphery of substrate S is close on the surperficial 53a of partes glabra 53 during mounting substrate S.Thus, between the alligatoring portion 51 of substrate S and dielectric film 8, can form confined space, particularly when supplying with heat-conducting gas to the back side of substrate S and carry out temperature control,, thereby can improve heat transfer efficiency because heat-conducting gas can be enclosed in the space of rear side of substrate S.
In addition, surface roughness Ra is meant the arithmetic average roughness by JIS B0601-1994 regulation, on the direction of its average line, determine datum length according to roughness curve, be aggregated in the absolute value of the deviation from average line to the roughness curve of measuring in this datum length, with the mean value of micron (μ m) expression.
The relation of the height of the surperficial 53a of alligatoring portion 51 and partes glabra 53 can be set the side of the surperficial 53a of cunning portion 53 the average height height than the summit of the concavo-convex protuberance of alligatoring portion 51, for example exceeds 15～25 μ m (preferred 20 μ m).
The most surperficial material as dielectric film 8 is for example used pottery or metal-ceramic composition etc.For example can enumerate aluminium oxide (Al as pottery
2O
3), aluminium nitride (AlN) etc.In addition, for example can enumerate the composite material of aluminium/aluminium oxide, the composite material of aluminium/aluminium nitride etc. as metal-ceramic composition.When metal-ceramic composition is the composite material of aluminium/aluminium oxide, for example can adopt hybrid metal aluminium or contain the alloy of aluminium 50% above capacity and the spraying plating raw material of the aluminium oxide that average particulate diameter is 3～20 μ m, form dielectric film 8 (or its most surperficial layer) by metallikon.For example from vickers hardness hv being controlled at 50～400 viewpoint, the capacity of the content of the aluminium oxide in the composite material of aluminium and aluminium oxide preferred 20～40%.
Below, with reference to Fig. 4 and Fig. 5 the manufacture method of the mounting table 5A that has alligatoring portion 51 and partes glabra 53 on dielectric film 8 is described.At first, as shown in Figure 4, the structure 5a for preparing to have base material 7 and cover the dielectric film 8a of this base material 7.In addition, dielectric film 8a can be lamination material a plurality of dielectric films (be not restricted to sputtered films of bismuth) different with film build method and form.At least the most surperficial of dielectric film 8a can form by for example described pottery of metallikon spraying plating or metal-ceramic composition.By spraying plating, on dielectric film 8a, expose thick random surface.In addition, when forming dielectric film 8a,, under the sort of occasion,, preferably implement sealing of hole in advance and handle in order to ensure withstand voltage properties though form pore sometimes by spraying plating.
Then, as shown in Figure 4, for example adopt lapping device 200 mechanically to grind with above-mentioned thick random surface smoothing equably.In this grinding step, implement to grind surface roughness Ra up to dielectric film 8a less than 2 μ m till.
Then, as shown in Figure 5, the periphery of the dielectric film 8a by smoothedization of protective cover 201 protection for example uses sand blasting unit 202 to carry out blasting treatment to the part of the inboard that do not covered.For grit-blasting treatment process, be that the following alligatoring face of the following 6 μ m of 2 μ m does not just have special restriction as long as can form surface roughness Ra, for example can use aluminium oxide (Al
2O
3), carborundum (SiC), zirconia (ZrO
3) wait as grinding-material.By this blasting treatment, the middle body of dielectric film 8a is by alligatoring, and forming surface roughness Ra is the following alligatoring portions 51 of the following 6 μ m of 2 μ m.In addition, in Fig. 5, compare surface small concavo-convex that alligatoring portion 51 is described in medelling more emphatically with actual conditions.Leave even surface in by the zone of 201 protections of the protective cover around the alligatoring portion 51, it becomes partes glabra 53.Partes glabra 53 is owing to the lapped face that leaves former state, so surface roughness Ra is less than 2 μ m.Can make the mounting table 5A (referring to figs. 1 through Fig. 3) of present embodiment by such order.
By being the alligatoring portion 51 below the 6 μ m below the 2 μ m and surface roughness Ra partes glabra 53 less than 2 μ m with the mounting table 5A of the present embodiment of upper type manufacturing because having surface roughness Ra on the substrate-placing face, so can reduce wounded substrate S can, and can prevent to produce etching spot etc.
In addition, the minimal structure of mounting table 5A only has been described in the above description, but has not hindered mounting table 5A to have other structure.For example mounting table 5A can have the electrode layer buried underground as playing a role as electrode for electrostatic attraction in dielectric film 8, or has from substrate-placing face 50 and supply with heat-conducting gas moral back side cooling body to the back side of substrate S.
Second execution mode
Below, describe with reference to the substrate-placing platform of Fig. 6～12 pair second embodiment of the invention.Fig. 6 is the sectional view of the substrate-placing platform 5B of present embodiment, and Fig. 7 is the major part sectional view that the structure of the near surface of the mounting table 5B of the part of the dotted line in Fig. 6 is amplified expression.The dielectric film 8 that mounting table 5B has base material 7 and is provided with on base material 7.
The upper surface of dielectric film 8 comprises having alligatoring portion 51 that surface roughness Ra is the following rough surface of the above 6 μ m of 2 μ m and with the surface roughness Ra of surrounding around this alligatoring portion 51 partes glabra 53 less than 2 μ m.As shown in Figure 7, alligatoring portion 51 has first sputtered films of bismuth 55 that forms by spraying plating and second sputtered films of bismuth 57 of the superficial layer that forms by the spraying plating lamination on this first sputtered films of bismuth 55.The surface of second sputtered films of bismuth 57 is the thick random surfaces that form by spraying plating.Second sputtered films of bismuth 57 exposes as superficial layer in alligatoring portion 51, and first sputtered films of bismuth 55 can be set in lower floor's (preferably joining with second sputtered films of bismuth 57) of this second sputtered films of bismuth 57, also can have other layers (being not limited to sputtered films of bismuth).In addition, first sputtered films of bismuth 55 is exposed on the top layer of partes glabra 53.
The relation of the height of the surperficial 53a of alligatoring portion 51 and partes glabra 53, the side of surperficial 53a that can be set at sliding portion 53 is than the average height height on the summit of the concavo-convex protuberance of alligatoring portion 51, for example 15 to 25 μ m (preferred 20 μ m).
Material as first sputtered films of bismuth 55 and second sputtered films of bismuth 57 is for example used pottery or metal-ceramic composition etc.First sputtered films of bismuth 55 can be formed by identical material with second sputtered films of bismuth 57, also can be formed by different materials.And then, hinder S in order not damage base, second sputtered films of bismuth 57 is preferably formed by the material with or hardness below it identical with substrate S, is more preferably formed by the material lower than the hardness of substrate S.Therefore at this, substrate S is under the situation of glass substrate, and vickers hardness hv is about 650, and second sputtered films of bismuth, 57 preferred vickers hardness hvs are in the material below 650, is more preferably vickers hardness hv in 50～400 material.
As the pottery that can be used in first sputtered films of bismuth 55 and second sputtered films of bismuth 57, for example can enumerate aluminium oxide (Al
2O
3), aluminium nitride (AlN) etc.In addition, as the metal-ceramic composition that can be used in first sputtered films of bismuth 55 and second sputtered films of bismuth 57, for example can enumerate the composite material of aluminium/aluminium oxide, the composite material of aluminium/aluminium nitride etc.Second sputtered films of bismuth 57 is because the small concavo-convex supporting substrate S by alligatoring, thus with compare by first sputtered films of bismuth 55 of partes glabra 53 supporting substrate S, preferably form by the low material of hardness.According to this viewpoint, be preferably as follows combination, that is, for example use the pottery of aluminium oxide, aluminium nitride etc., use the composite material of aluminium/aluminium oxide, aluminium/aluminium nitride etc. as second sputtered films of bismuth 57 as first sputtered films of bismuth 55.In addition, the composite material as aluminium/aluminium oxide can use and the first execution mode identical materials.
The viewpoint of the surface roughness Ra of calm alligatoring easy to control portion 51 is set out, and the thickness of second sputtered films of bismuth 57 is preferably for example 15 μ m～25 μ m.
The surface roughness Ra of the alligatoring portion 51 of dielectric film 8 is below the above 6 μ m of 2 μ m, is preferably below the above 4.5 μ m of 2.5 μ m.The surface roughness Ra of alligatoring portion 51 is that the following reason of the above 6 μ m of 2 μ m is identical with first execution mode.
In addition, the surface roughness Ra of the surperficial 53a of partes glabra 53 is preferably below the above 1.5 μ m of 0.4 μ m less than 2 μ m.The surface roughness Ra of the surperficial 53a of partes glabra 53 is identical with first execution mode less than the reason of 2 μ m.
Below, with reference to Fig. 8 to Figure 12 the method that is manufactured on the mounting table 5B that has alligatoring portion 51 and partes glabra 53 on the dielectric film 8 is described.At first, as shown in Figure 8, the structure 5b for preparing to have base material 7 and cover the dielectric film 8b of this base material 7.At this, dielectric film 8b can be formed by the material a plurality of dielectric film laminations different with film build method.The the most surperficial at least of dielectric film 8a is can be by first sputtered films of bismuth 55 of for example described ceramic material formation of metallikon spraying plating.By spraying plating, on first sputtered films of bismuth 55, expose thick random surface.In addition, when forming dielectric film 8b,, under the sort of occasion,, preferably implement sealing of hole in advance and handle in order to ensure withstand voltage properties though form pore sometimes by spraying plating.
Then, as shown in Figure 8, for example adopt 200 pairs of above-mentioned thick random surfaces of lapping device to carry out mechanical lapping and make its smoothing equably.In this grinding step, implement to grind surface roughness Ra up to dielectric film 8b less than 2 μ m till.
Then, as shown in Figure 9, the periphery of the dielectric film 8b by smoothedization of protective cover 201 protection for example uses 202 pairs of sand blasting units not have the part of guarded inboard to carry out blasting treatment.By this sandblast processing, in the central portion of alligatoring dielectric film 8b, make it subtract film (that is, cut down the surface, make the thickness attenuation).Blasting treatment can improve by prolongation processing time or raising ejection pressure and subtract the film amount.In addition, in Fig. 9, compare small concavo-convex (identical in Figure 10, Figure 12) that the surface of dielectric film 8b is described in medelling more emphatically with actual conditions.
Figure 10 represents the state of the dielectric film 8b after the alligatoring, and in addition, Figure 11 amplifies the part that is illustrated in dotted line among Figure 10.In the middle body of dielectric film 8b, form and subtract membranous part 52.In the zone of 201 protections of protective cover on every side that subtracted membranous part 52, leave even surface, form partes glabra 53.In order to control the surface roughness Ra of alligatoring portion 51 easily when forming second sputtered films of bismuth 57 in the operation of back, the surface roughness Ra that subtracts membranous part 52 is preferably for example below the above 4 μ m of 2 μ m.In addition, be benchmark with the surface of partes glabra 53, the film amount that subtracts that subtracts membranous part 52 for example can be 30 μ m～50 μ m.If it is very few to subtract the film amount, in the operation of back, be difficult to form second sputtered films of bismuth 57, if it is too much to subtract the film amount, owing to reducing insulating properties, dielectric film 8b damages withstand voltage properties sometimes.
Then, as shown in figure 12, reuse the surface of protective cover 201 protection partes glabras 53 after.Use 203 of spray torches to carry out spraying plating on the membranous part 52 subtracting, form second sputtered films of bismuth 57.Second sputtered films of bismuth 57 is the following alligatoring portions 51 (with reference to Fig. 6) of the above 6 μ m of 2 μ m owing to be formed on by on first sputtered films of bismuth 55 of alligatoring so become surface roughness Ra.Like this, by in advance by the surperficial lamination that subtracts membranous part 52 second sputtered films of bismuth 57 of alligatoring, control the surface roughness of alligatoring portion 51 easily, and by anchor effect first sputtered films of bismuth 55 and second sputtered films of bismuth 57 of set bottom securely.In the zone of 201 protections of protective cover on every side that subtracted membranous part 52, leave even surface, these even surfaces are partes glabra 53.Partes glabra 53 since former state remain with lapped face, so surface roughness Ra is less than 2 μ m.
Under the situation of the material that changes first sputtered films of bismuth 55 and second sputtered films of bismuth 57, in film formation process separately, can select the spraying plating raw material.Selective oxidation aluminium (Al when forming first sputtered films of bismuth 55 for example
2O
3), the ceramic material of aluminium nitride (AlN) etc. is as depositing materials, selects the metal-ceramic composition of the composite material of aluminium/aluminium oxide, the composite material of aluminium/aluminium nitride etc. as depositing materials when forming second sputtered films of bismuth 57.Thus, can on the hardness of first sputtered films of bismuth 55 and second sputtered films of bismuth 57, hold difference.According to above order, can make the mounting table 5B (with reference to Fig. 6) of present embodiment.
The mounting table 5B of the present embodiment of Zhi Zaoing like this, comprise that in basic mounting surface 50 having with first sputtered films of bismuth 55 be that the surface roughness Ra of second sputtered films of bismuth 57 that forms of bottom is that the alligatoring portion 51 below the 6 μ m and surface roughness Ra so can reduce wounded substrate S and prevent to produce etching spot etc. less than the partes glabra 53 of 2 μ m more than the 2 μ m.
The structure of in the present embodiment other is identical with first execution mode with effect.
[for the application examples of plasma-etching apparatus]
Below, with reference to Figure 13 and Figure 14 to substrate-placing platform of the present invention is used for plasma-etching apparatus execution mode describe.As shown in figure 13, plasma-etching apparatus 100 constitutes the parallel flat plasma-etching apparatus that the substrate S that FPD is used carries out etched capacity mating type.In addition, as the FPD illustration LCD (LCD), electroluminescent display (Electro Luminescence:EL), plasma scope (PDP) etc. are arranged.
The surface is made up of aluminium by anodized (alumite processing), the side's of being configured as tubular processing container 1 that this plasma Etaching device 100 has.Container handling 1 comprises that diapire 1a, 4 sidewall 1b (only illustrate 2 sidewall 1b
1, 1b
2).In addition, the upper bond at container handling 1 has lid 1c.
The lower substrate 61 that bottom in container handling 1 disposes insulating material 60 and is provided with on this insulating material 60.Lower substrate 61 be provided with can mounting substrate S mounting table 5.Also the mounting table 5 as lower electrode has base material 7 and the dielectric film 8 of formation on base material 7.The surface of this dielectric film 8 is the substrate-placing face 50 of mounting substrate S.Can be suitable for the mounting table 5A of above-mentioned first execution mode or the mounting table 5B of second execution mode as this mounting table 5.So, though omit diagram in the following description, the substrate-placing face 50 of dielectric film 8 be provided with surface roughness Ra be more than the 2 μ m alligatoring portion 51 below the 6 μ m and surface roughness Ra less than the partes glabra 53 of 2 μ m.
Be provided with heat-conducting medium chamber 83 in the inside of lower substrate 61.In this heat-conducting medium chamber 83, import the heat-conducting medium that fluorine for example is a liquid etc., and discharge and constitute circulation by heat-conducting medium discharge pipe 83b by heat-conducting medium ingress pipe 83a.The heat of this heat-conducting medium (for example, cold and hot) is by lower substrate 61 and 5 couples of substrate S of mounting table heat conduction.Surround the sidepiece of mounting table 5, lower substrate 61 and insulating material 60 by insulating material 13.Guarantee the insulating properties of the side of mounting table 5 by insulating material 13, the paradoxical discharge when preventing plasma treatment.
Above mounting table 5, be provided with spray head 15 parallel and relative with this mounting table 5, that play a role as upper electrode.Spray head 15 is supported on the lid 1c on top of container handling 1.15 one-tenth hollow forms of spray head, portion is provided with gaseous diffusion space 15a within it.In addition, on the lower surface of spray head 15 (face relative), be formed with and be used to spray a plurality of gas squit hole 15b that handle gas with mounting table 5.These spray head 15 ground connection constitute the pair of parallel plate electrode with mounting table 5.
Near the center upper portion of spray head 15, be provided with gas introduction port 17.Handle gas supply pipe 19 and be connected to this gas introduction port 17.By 2 valves 21,21 and mass flow controller (MFC) 23, the gas supply source 25 that supply is used for the gas of etch processes is connected with this processing gas supply pipe 19.As handling gas except for example halogen family gas and O
2Outside the gas, can use the rare gas of Ar gas etc.
In near 4 corners in described container handling 1 the position, on diapire 1a, be formed with as the exhaust of pass through openings portion with opening 27 (only illustrating 2) at 4 positions.Blast pipe 29 is connected with opening 27 with each exhaust.Blast pipe 29 has flange portion 29a in its end, and O shape ring (not shown) is fixed between flange portion 29a and the bottom wall portion 1a with the state that inserts.Blast pipe 29 is connected with exhaust apparatus 31.Exhaust apparatus 31 has for example vacuum pump of turbomolecular pump etc., can will be evacuated to the reduced atmosphere of regulation in the container handling 1 thus.
In addition, at the sidewall 1b of container handling 1
1On, be provided with as the substrate of pass through openings portion and carry with opening 33.This substrate is carried and is opened and closed by gate valve 35 with opening 33, can carry out conveying substrate S between the conveying chamber (omitting diagram) of adjacency.Make as the O shape of first seal member ring 37 every with sidewall 1b
1Between, fixing means gate valves 35 such as employing screw are fixed on sidewall 1b
1On.
Supply lines 39 is connected on the lower substrate 61.High frequency electric source 43 is connected with this supply lines 39 via adaptation (M.B.) 41.Thus, from high frequency electric source 43 via lower substrate 61 to supplying with for example High frequency power of 13.56MHz as the mounting table 5 of lower electrode.In addition, by the power supply opening 45 as pass through openings portion that forms on diapire 1a, supply lines 39 is imported in the container handling 1.
Below, the processing action by the plasma-etching apparatus 100 that as above constitutes is described.At first, under gate valve 35 opened state, carry with opening 33 quilts by substrate by the fork part of not shown conveying device as the substrate S of handled object and to be moved in the container handling 1, be handed off on the mounting table 5.At this moment, mounting table 5 since have on the substrate-placing face 50 not shown surface roughness Ra be more than the 2 μ m alligatoring portion 51 below the 6 μ m and surface roughness Ra less than the partes glabra 53 of 2 μ m, so can be with small concavo-convex multi-point support substrate S in alligatoring portion 51.Its result, stress is disperseed, and the back side of reducing substrate S damages.In addition, at partes glabra 53, support owing to can be close to substrate S, so can form confined space easily in the rear side of substrate S.Then, closing gate valve 35 by exhaust apparatus 31, will be evacuated to the specified vacuum degree in the container handling 1.
Then, open valve 21 imports processing gas from gas supply source 25 by processing gas supply pipe 19, gas introduction port 17 to the 15a of the gaseous diffusion space of spray head 15.At this moment, handle the control of gas flow by mass flow controller 23.Be imported into the processing gas of gaseous diffusion space 15a, further the substrate S that is positioned on the mounting table 5 sprayed equably, the pressure in the container handling 1 is maintained the numerical value of regulation by a plurality of squit hole 15b.
Under this state, apply High frequency power to mounting table from high frequency electric source 43.Thus, between as the mounting table 5 of lower electrode and spray head 15, produce high-frequency electric field, will handle decomposing gas and carry out plasmaization as upper electrode.By this plasma substrate S is implemented etch processes.
After implementing etch processes, in the High frequency power that stops to apply from high frequency electric source 43, and stop to import after the gas, will be decompressed to the pressure of regulation in the container handling 1.Then, open gate valve 35, substrate S is sent to from mounting table 5 on the fork part of not shown conveying device, carry from the substrate of container handling 1 and take out of substrate S with opening 33.By above operation, finish plasma etch process to substrate.Owing to repeat such plasma etch process, in container handling 1, produce the etching product, can be attached in the alligatoring portion 51, nonetheless, be difficult to planarization because have small concavo-convex alligatoring portion 51, so can suppress from mounting table 5 to the heat conduction efficiency of substrate S and the change of electrical efficiency.So, can prevent processing inhomogeneous etc. of etching spot etc. for example.
In addition, substrate-placing platform of the present invention can have the Electrostatic Absorption function concurrently.For example, plasma-etching apparatus 101 shown in Figure 14 uses to have the mounting table 5C of Electrostatic Absorption function as substrate-placing platform.Because the structure of other of plasma-etching apparatus shown in Figure 14 101 is identical with the plasma-etching apparatus of Figure 13 100, so also omit explanation with the identical symbol of employing for identical structure.
Has the base material 65 that the electric conducting material by aluminium etc. constitutes as the mounting table 5C of substrate-placing platform.This base material 65 is equivalent to the base material 7 in first and second execution modes.At the upper surface of this base material 65, under begin successively that lamination has first insulating barrier 67, electrode 69 and second insulating barrier 71.This second insulating barrier 71 is equivalent to the dielectric film 8 of substrate-placing platform 5A, the 5B of first and second execution modes.On the electrode 69 between first insulating barrier 67 and second insulating barrier 71, the direct voltage from DC power supply 73 applies via supply lines 75 passes through for example Coulomb force Electrostatic Absorption substrate S thus.Be formed with the substrate-placing face 50 of absorption and maintenance substrate S at second insulating barrier, 71 upper surfaces.Though omit in the diagram, substrate-placing face 50 be provided with surface roughness Ra be more than the 2 μ m alligatoring portion 51 below the 6 μ m and surface roughness Ra less than the partes glabra 53 of 2 μ m.
On described insulating material 60 and lower substrate 61, be formed with the gas passage 77 of running through them.Can supply with heat-conducting gas, for example He gas to the back side of substrate S by this gas passage 77.That is, thus mounting table 5C has to the back side of substrate S and supplies with the back side cooling body that heat-conducting medium cools off.Be fed into the heat-conducting gas of gas passage 77, after temporarily spreading apart in the horizontal direction by the gas storage part 79 that forms on the border of lower substrate 61 and base material 65, by the supply company through hole 81 that in base material 65, forms, from the surface of mounting table 5C to the dorsal part ejection of substrate S.Like this, mounting table 5C cold and hot is passed to substrate S, substrate S maintained the temperature of regulation.
Has the Electrostatic Absorption function owing to have the mounting table 5C of the present embodiment of above structure, so on substrate-placing face 50, adsorb substrate S strongly, but at the mode supporting substrate S that alligatoring portion 51 contacts with multiple spot at its small protuberance, thus can dispersive stress.Its result can prevent from damage is caused at the back side of substrate S.In addition, also small concavo-convex even etched reaction product or particle etc. are attached in the alligatoring portion 51 because of existing, and be difficult to become tabular surface.In addition, because partes glabra 53 is close to by the back side of its level and smooth surface and substrate S,, carry out effective heat conduction by described heat-conducting gas so between the back side of substrate S and alligatoring portion 51, form confined space.So, even repeat etching process, also can make from mounting table 5C and in the plane of substrate S, carry out equably to the heat conduction of substrate S, can prevent to produce the etching spot.
More than, though understand embodiments of the present invention in detail by illustrative purpose, the present invention is not restricted to above-mentioned execution mode.Those skilled in the art can not break away from thought of the present invention and scope is finished many changes, and they also are included in the scope of the present invention.For example, the substrate that the present invention is not limited to use with FPD is the plasma processing apparatus of process object, also is applicable to for example be the container for plasma treatment of process object with the semiconductor wafer.In addition, be not limited to plasma-etching apparatus, also can be applicable to the plasma processing apparatus of other plasma treatment of carrying out for example plasma ashing processing, plasma CVD processing etc.
Claims (13)
1. a substrate-placing platform is characterized in that, comprising:
Base material; With
Cover the dielectric film of this base material,
Form the substrate-placing face of mounting substrate by described dielectric film, and this substrate-placing mask have surface roughness Ra be more than the 2 μ m alligatoring portion below the 6 μ m and the surface roughness Ra that around described alligatoring portion, is provided with less than the partes glabra of 2 μ m.
2. substrate-placing platform as claimed in claim 1 is characterized in that:
By the middle body of described alligatoring portion supporting substrate, by the peripheral part of described partes glabra supporting substrate.
3. substrate-placing platform as claimed in claim 1 or 2 is characterized in that:
At least described alligatoring portion is formed by the material of the hardness below the hardness with described substrate.
4. substrate-placing platform as claimed in claim 1 or 2 is characterized in that:
Second sputtered films of bismuth that described dielectric film has first sputtered films of bismuth that forms by spraying plating and forms in the mode of at least a portion of covering described first sputtered films of bismuth by spraying plating, there is described second sputtered films of bismuth in described alligatoring portion at the described first sputtered films of bismuth superimposed layer.
5. substrate-placing platform as claimed in claim 4 is characterized in that:
The surface of described partes glabra is formed by described first sputtered films of bismuth.
6. substrate-placing platform as claimed in claim 4 is characterized in that:
Described second sputtered films of bismuth is formed by the material of the hardness below the hardness with described substrate.
7. substrate-placing platform as claimed in claim 6 is characterized in that:
Described first sputtered films of bismuth is different with the material of described second sputtered films of bismuth.
8. substrate-placing platform as claimed in claim 7 is characterized in that:
Described second sputtered films of bismuth is formed by the material of the hardness below the hardness with described first sputtered films of bismuth.
9. as each described substrate-placing platform in claim 1 or 2, it is characterized in that:
Have the conductive layer that is embedded in the described dielectric film, have the Electrostatic Absorption function.
10. substrate board treatment is characterized in that:
Has each described substrate-placing platform in claim 1 or 2.
11. the manufacture method of a substrate-placing platform, this substrate-placing platform are used for mounting substrate when substrate is implemented to handle, the manufacture method of this substrate-placing platform is characterised in that, comprising:
Grind the surface of the dielectric film of covering substrates, form the grinding step of surface roughness Ra less than the even surface of 2 μ m; With
Surface for the described dielectric film after grinding, to leave the mode of even surface in the zone of the periphery of substrate-placing face, blasting treatment is implemented in zone to the middle body of described substrate-placing face, and forming surface roughness Ra is the alligatoring operation of the following alligatoring portion of the above 6 μ m of 2 μ m.
12. the manufacture method of a substrate-placing platform, this substrate-placing platform are used for mounting substrate when substrate is implemented to handle, the manufacture method of this substrate-placing platform is characterised in that, comprising:
Grind the surface of the dielectric film of covering substrates, form the grinding step of surface roughness Ra less than the even surface of 2 μ m;
For the surface of the described dielectric film after grinding, leaving the mode of even surface in the zone of the periphery of substrate-placing face, the operation that blasting treatment subtracts film is implemented in the zone of the middle body of described substrate-placing face; With
For the zone that subtracts the described middle body behind the film, forming surface roughness Ra by spraying plating is the operation of the sputtered films of bismuth below the 6 μ m more than the 2 μ m.
13. the manufacture method as claim 11 or 12 described substrate-placing platforms is characterized in that: described dielectric film is the sputtered films of bismuth that forms by spraying plating.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009273160A JP5612300B2 (en) | 2009-12-01 | 2009-12-01 | Substrate mounting table, manufacturing method thereof, and substrate processing apparatus |
| JP2009-273160 | 2009-12-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102157423A true CN102157423A (en) | 2011-08-17 |
| CN102157423B CN102157423B (en) | 2013-08-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105762643A Active CN102157423B (en) | 2009-12-01 | 2010-12-01 | Substrate mounting table and method for manufacturing the same, and substrate processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5612300B2 (en) |
| KR (1) | KR101261706B1 (en) |
| CN (1) | CN102157423B (en) |
| TW (1) | TWI578434B (en) |
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| CN109791911A (en) * | 2016-09-29 | 2019-05-21 | 日本发条株式会社 | The production method of substrate-placing platform and substrate-placing platform |
| CN110066990A (en) * | 2018-01-22 | 2019-07-30 | 相求精工株式会社 | Substrate support device and its manufacturing method |
| CN111276426A (en) * | 2018-12-04 | 2020-06-12 | 东京毅力科创株式会社 | Substrate mounting table, substrate processing apparatus, and method of manufacturing substrate mounting table |
| CN113741153A (en) * | 2020-05-14 | 2021-12-03 | 家登精密工业股份有限公司 | Container for accommodating substrates and method of controlling flow of intake air to a container |
| CN115213808A (en) * | 2021-03-30 | 2022-10-21 | 东京毅力科创株式会社 | Polishing method for substrate mounting table and substrate processing apparatus |
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| JP2012195211A (en) * | 2011-03-17 | 2012-10-11 | Ulvac Japan Ltd | Apparatus and method for plasma processing |
| JP5937850B2 (en) * | 2012-02-29 | 2016-06-22 | 株式会社ブリヂストン | Grinding method |
| SG10201606197XA (en) * | 2015-08-18 | 2017-03-30 | Ebara Corp | Substrate adsorption method, substrate holding apparatus, substrate polishing apparatus, elastic film, substrate adsorption determination method for substrate holding apparatus, and pressure control method for substrate holding apparatus |
| JP2017126717A (en) * | 2016-01-15 | 2017-07-20 | 東京エレクトロン株式会社 | Surface treatment method of placing table, placing table and plasma processing device |
| WO2017163409A1 (en) | 2016-03-25 | 2017-09-28 | 株式会社日立国際電気 | Substrate supporting table, substrate processing apparatus, and method for manufacturing semiconductor device |
| JP6955904B2 (en) * | 2017-05-26 | 2021-10-27 | 東京エレクトロン株式会社 | Board processing equipment |
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| KR20230119748A (en) * | 2022-02-08 | 2023-08-16 | (주)아이씨디 | Electrostatic Device And The Operating Method Of The Same |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2011119326A (en) | 2011-06-16 |
| JP5612300B2 (en) | 2014-10-22 |
| TWI578434B (en) | 2017-04-11 |
| KR20110061506A (en) | 2011-06-09 |
| TW201145441A (en) | 2011-12-16 |
| KR101261706B1 (en) | 2013-05-06 |
| CN102157423B (en) | 2013-08-28 |
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