201145441 六、發明說明： 【發明所屬之技術領域】 本發明是有關載置基板的基板載置台及其製造方法， 以及基板處理裝置。 【先前技術】 在平面直角顯示器（FPD)的製造工程中，對於被處 理體的基板實施電漿蝕刻處理。電漿蝕刻處理是在例如配 置一對的平行平板電極（上部及下部電極）之處理容器內 ，將基板載置於具有作爲下部電極的功能的載置台，對電 極的至少一方施加高頻電力，而於電極間形成高頻電場。 藉由此高頻電場來形成處理氣體的電漿，藉由此電漿來蝕 刻處理基板上的材料膜。一旦重複進行電漿蝕刻處理，則 會產生蝕刻生成物，附著於載置台表面而積蓄。當載置台 的表面爲平滑的面時，產生附著物介於基板的背面與載置 台之間的區域，在與附著物不存在的區域之間熱傳導性或 導電性產生差異。其結果，在基板的面內形成蝕刻速率高 的部分及低的部分而產生蝕刻斑。而且，也會有因爲附著 物而基板貼附於載置台的情形。 爲了防止蝕刻斑，而有在表面設置浮雕（Emboss )形 狀的載置台爲人所知。例如專利文獻1是在載置台的表面 設置頂面被粗化的複數的凸部，保持基板與載置台表面的 間隔，藉此即使在載置台表面產生附著物，也可防止蝕刻 斑的發生。並且，在專利文獻1中亦提案在載置台的周圍 -5- 201145441 形成平滑的台部，在使載置台具有作爲靜電吸附電極的功 能時使傳熱媒體的熱傳導效率提升。 又，專利文獻2是基於防止基板往載置台貼附，抑制 微粒及提高製程安定性的觀點，而提案將電漿CVD用的載 置台的表面予以噴砂處理，形成凹凸部，使表面粗度Ra形 成Ιμηι以上8μηι以下之後，更化學性、電氣化學性及/或機 械性地硏磨除去凸部的急劇的突起。 〔先行技術文獻〕 〔專利文獻〕 〔專利文獻1〕特開2006-351949號公報 〔專利文獻2〕特開平10-340896號公報 【發明內容】 (發明所欲解決的課題） 在表面設置浮雕形狀的凸部之載置台，因爲與基板的 接觸是成爲點接觸，所以應力會集中於接觸部位，會有傷 及基板的問題。另一方面，若將載置台的全面形成粗化面 ，則在使載置台具有作爲靜電吸附電極的功能時，往基板 的背面側之傳熱媒體的供給會形成不安定，熱傳導效率的 控制變得困難，恐有發生蝕刻斑之虞。 本發明是有鑑於上述實情而硏發者，其課題是在於提 供一種不會傷及基板，可有效地防止蝕刻斑的發生之載置 台。 201145441 (用以解決課題的手段） 本發明的基板載置台係具備基材、及覆蓋該基材的絕 緣膜’藉由前述絕緣膜來形成載置基板的基板載置面，且 在該基板載置面具有表面粗度Ra爲2μπι以上6μιη以下的粗 化部、及設於前述粗化部的周圍之表面粗度Ra爲未滿2μηι 的平滑部。 又’本發明的基板載置台係以前述粗化部來支撐基板 的中央部分，以前述平滑部來支撐基板的周緣部分。又， 本發明的基板載置台係至少前述粗化部以具有前述基板的 硬度以下的硬度之材質所形成爲理想》 又’本發明的基板載置台係前述絕緣膜具有：藉由熱 噴塗來形成的第1熱噴塗膜、及以能夠覆蓋前述第1熱噴塗 膜的至少一部分的方式藉由熱噴塗來形成的第2熱噴塗膜 ’前述粗化部係於前述第1熱噴塗膜的上面層疊前述第2熱 噴塗膜爲理想。此情況，前述平滑部的表面係藉由前述第 1熱噴塗膜所形成爲理想。又，前述第2熱噴塗膜係以具有 前述基板的硬度以下的硬度之材質所形成爲理想。此情況 ’前述第1熱噴塗膜與前述第2熱噴塗膜的材質可爲不同， 前述第2熱噴塗膜亦可以具有前述第1熱噴塗膜的硬度以下 的硬度之材質所形成。 又’本發明的基板載置台係具有埋設於前述絕緣膜中 的導電層，具備靜電吸附功能爲理想。 本發明的基板處理裝置係具備上述任一基板載置台者 201145441 本發明的基板載置台的製造方法，係對基板施以處理 時載置基板的基板載置台的製造方法，其係包含： 硏磨工程，其係硏磨覆蓋基材的絕緣膜的表面，形成 表面粗度Ra爲未滿2μιη的平滑面；及 粗化工程，其係對於硏磨後的前述絕緣膜的表面，以 能夠在成爲基板載置面的周緣部的區域留下平滑面的方式 ，對成爲前述基板載置面的中央部分的區域施以噴砂處理 ，形成表面粗度Ra爲2μιη以上6μπι以下的粗化部。 又，本發明的別的基板載置台的製造方法，係對基板 施以處理時載置基板的基板載置台的製造方法，其係包含 硏磨工程，其係硏磨覆蓋基材的絕緣膜的表面，形成 表面粗度Ra爲未滿2μιη的平滑面； 對於硏磨後的前述絕緣膜的表面，以能夠在成爲基板 載置面的周緣部的區域留下平滑面的方式，對成爲前述基 板載置面的中央部分的區域施以噴砂處理而使減膜之工程 :及 對於使減膜的前述中央部分的區域，藉由熱噴塗來形 成表面粗度Ra爲2μιτι以上6μιτι以下的熱噴塗膜之工程》 本發明的基板載置台的製造方法係前述絕緣膜爲藉由 熱噴塗來形成的熱噴塗膜爲理想。 〔發明的效果〕 本發明的基板載置台是在基板載置面具有表面粗度Ra -8 - 201145441 爲2μηι以上6μηι以下的粗化部、及設於粗化部的周圍之表 面粗度Ra爲未滿2μιη的平滑部。由於粗化部可爲利用微細 的凹凸之多點的支撐，因此應力會被分散，傷及基板的背 面之憂慮少。又，由於具有微細的凹凸之粗化部是即使產 生附著物也難平坦化，因此可抑制附著物造成從基板載置 台往基板的熱傳導效率及導電效率的變動。因此，可例如 改善蝕刻斑等的處理不均一。又，由於平滑部可使基板緊 貼而支撐，因此可容易在基板的背面側形成密閉空間，例 如在此空間導入傳熱媒體來進行溫度調節時可提高傳熱效 率。 【實施方式】 [第1實施形態] 以下，參照圖面來詳細說明有關本發明的實施形態。 圖1是作爲本發明的第1實施形態的基板載置台的載置台5Α 的平面圖。圖2是圖1的ΙΙ-ΙΙ線箭號的剖面圖。並且，圖3 是擴大顯示圖2的點線所包圍的部分的載置台5Α的表面附 近的構造的要部剖面圖。 載置台5Α是具備：基材7、及設於基材7上的絕緣膜8 。基材7是例如以鋁或不鏽鋼（S U S )等的導電性材料所形 成。絕緣膜8的上面是形成例如載置F P D用的玻璃基板（以 下簡稱「基板」）S的基板載置面50。基板載置面50是具 有：表面粗度Ra爲2μπι以上6μηι以下的粗表面的粗化部51 、及包圍此粗化部51的周圍之表面粗度Ra爲未滿2μιη的平 -9 - 201145441 滑部5 3。 載置台5A的上面的絕緣膜8的粗化部51是如圖3所示般 具有微細的凹凸。粗化部5 1是可在其凸部以多點和基板S 接觸來支撐基板S。其結果，可防止傷及基板S的背面。並 且，即使蝕刻所產生的反應生成物或微粒等附著於粗化部 51，也會因爲微細的凹凸存在而難以形成平坦面，可抑制 蝕刻斑。粗化部51的表面粗度Ra是2μπι以上6μπι以下，較 理想是2.5μηι以上4.5μηι以下。在載置台5Α若是粗化部51的 表面粗度Ra爲未滿2μιη的平滑面，則藉由重複蝕刻製程， 蝕刻生成物會附著於絕緣膜8的表面而堆積。藉由此堆積 物，從載置台5Α往基板S的熱傳達會在基板S的面內形成不 均一，恐有產生蝕刻斑之虞。並且，使粗化部51的表面粗 度Ra超過6μπι是加工上困難，且一旦表面粗度Ra過大，則 與基板的接點會變少，容易產生傷，有時無法確保絕緣膜 8的充分耐壓性能。 又，平滑部53的表面53a的表面粗度Ra是未滿2μηι，較 理想是0.4 μπι以上1.5 μηι以下。藉由將平滑部53的表面53 a 的表面粗度Ra設爲未滿2μηι，在載置台5A載置基板S時可 使基板S的周緣部的背面緊貼於平滑部53的表面53a。藉此 ，可在基板S與絕緣膜8的粗化部5 1之間形成密閉空間，尤 其是在將傳熱氣體供給至基板S的背面來進行溫度控制時 ，可把傳熱氣體關在基板S的背面側的空間，因此可使傳 熱效率提升。 另外，表面粗度Ra是意指被規定於JIS B0601 - 1 994的 -10- 201145441 算術平均粗度，由粗度曲線在其平均線的方向決定基準長 度，合計在此基準長度內從平均線到所被測定的粗度曲線 的偏差的絶對値，以微米（μιη )來表示平均的値。 粗化部51與平滑部53的表面53a的高度關係是設定成 平滑部5 3的表面5 3 a要比粗化部5 1的凹凸的凸部的頂點的 平均闻度更闻例如15〜25μηι (較理想是20μηι)。 絕緣膜8可爲單層，或層疊材質不同的複數的絕緣膜 者，但最表面層爲了不傷及基板S，較理想是以和基板S相 同或以下的硬度的材質所形成，更理想是以硬度比基板S 更低的材質所形成。在此，當基板S爲玻璃基板時，因爲 維氏硬度HV是650程度，所以較理想是絕緣膜8的最表面 層是維氏硬度HV爲650以下的材質，更理想是維氏硬度HV 爲50〜400的材質。 絕緣膜8的最表面層的材質是例如可使用陶瓷或金屬_ 陶瓷複合體等。陶瓷是例如可舉氧化鋁（αι2ο3 )、氮化 鋁（Α1Ν)等。又’金屬-陶瓷複合體是例如可舉鋁/氧化 鋁的混合材、鋁/氮化鋁的混合材等。當金屬-陶瓷複合體 爲鋁/氧化鋁的混合材時’例如可使用混合金屬鋁或含有 50容量％以上的鋁的合金及平均粒徑爲3〜20μηι的氧化鋁 之熱噴塗原料’藉由熱噴塗法來形成絕緣膜8 (或其最表 面層）。鋁/氧化鋁的混合材中的氧化鋁的含量，例如基 於將維氏硬度HV壓在50〜400的觀點，20〜4〇容量％。 其次’一邊參照圖4及圖5 —邊說明有關在絕緣膜8上 具有粗化部51及平滑部53的載置台5Α的製造方法。首先， -11 - 201145441 如圖4所示，準備一構造體5a，其係具有基材7及覆蓋此基 材7的絕緣膜8a。另外，絕緣膜8a可爲層疊材質或成膜法 不同的複數的絕緣膜（不限於熱噴塗膜）所形成者。絕緣 膜8a的至少最表面可藉由例如熱噴塗前述陶瓷或金屬-陶 瓷複合體的熱噴塗法所形成。藉由熱噴塗，在絕緣膜8 a露 出粗糙的放射表面。另外，藉由熱噴塗來形成絕緣膜8 a時 ，有時形成有氣孔，此情況爲了確保耐電壓性能，較理想 是施以封孔處理》 其次，如圖4所示，例如利用硏磨裝置200來機械硏磨 上述放射表面，而使均一地平滑化。在此硏磨工程是至絕 緣膜8a的表面粗度Ra形成未滿2μπι爲止實施硏磨。 其次，如圖5所示，以遮罩201來保護被平滑化的絕緣 膜8 a的周緣部，將未被遮罩的內側部分予以例如利用噴砂 裝置202來噴砂處理。噴砂處理的方法並無特別加以限制 ，只要形成表面粗度Ra爲2μηι以上6μιη以下的粗化面即可 ，例如可使用氧化鋁（Α1203 )、碳化矽（SiC )、氧化锆 (Zr03 )等作爲硏磨材來進行。藉由此噴砂加工，絕緣膜 8a的中央部分會被粗化而形成表面粗度Ra爲2μϊη以上6μηι 以下的粗化部5 1。另外，在關5是模式性地描繪比實際更 強調粗化部51的表面的微細的凹凸。在粗化部51的周圍被 遮罩201所保護的區域留下平滑面，成爲平滑部53。平滑 部53是硏磨表面原封不動留下，因此表面粗度Ra爲未滿 2μηι。可藉由如此的程序來製造本實施形態的載置台5A ( 參照圖1〜圖3)。 -12- 201145441 如以上那樣製造之本實施形態的載置台5A是在基板載 置面50具有表面粗度Ra爲2μιη以上6μηι以下的粗化部51、 及表面粗度Ra爲未滿2μηι的平滑部53，因此傷及基板S的 憂慮少，且可防止蝕刻斑等發生。 另外，在上述說明是只說明載置台5Α的最低限度的構 成’但載置台5Α是不妨礙具有其他的構成。例如載置台 5 Α亦可爲具備埋入絕緣膜8中的電極層而具有作爲靜電吸 附電極的功能者，或具備從基板載置面5 0往基板S的背面 來供給傳熱氣體的背散熱機構。 [第2實施形態] 其次，一邊參照圖6〜12，一邊說明有關本發明的第2 實施形態的基板載置台。圖6是本實施形態的載置台5B的 剖面圖，圖7是擴大顯示圖6的點線所包圍的部分的載置台 5B的表面附近的構造的要部剖面圖。載置台5B是具有：基 材7、及設於基材7上的絕緣膜8。 絕緣膜8的上面是具有： 粗化部51，其係具有表面粗度Ra爲2μιη以上6μιη以下 的粗表面；及 平滑部53，其係包圍該粗化部51的周圍，表面粗度Ra 爲未滿2μιη。 如圖7所示，粗化部51是具有：藉由熱噴塗來形成的 第1熱噴塗膜55、及在此第1熱噴塗膜55上藉由熱噴塗來層 疊之最表面層的第2熱噴塗膜57。第2熱噴塗膜57的表面是 -13- 201145441 成爲熱噴塗的放射面。粗化部51是只要第2熱噴塗膜57作 爲最表面層露出，在比該第2熱噴塗膜57更下層（較理想 是接於第2熱噴塗膜57)設置第1熱噴塗膜55即可，亦可具 有其他的層（不限於熱噴塗膜）。並且，平滑部53的表層 第1熱噴塗膜55露出。 粗化部51與平滑部53的表面53a的高度關係是設定成 平滑部5 3的表面5 3 a要比粗化部5 1的凹凸的凸部的頂點的 平均高度更高例如15〜25μηι (較理想是20μηι)。 第1熱噴塗膜55及第2熱噴塗膜57的材質是例如可使用 陶瓷或金屬-陶瓷複合體等。第1熱噴塗膜55及第2熱噴塗 膜57可使用相同的材質來形成，或相異的材質來形成。第 2熱噴塗膜57更爲了不傷及基板S，較理想是以具有和基板 S相同或以下的硬度的材質所形成，更理想是硬度比基板S 更低的材質所形成。在此，當基板S爲玻璃基板時，因爲 維氏硬度HV是65 0程度，所以較理想是第2熱噴塗膜57是 維氏硬度HV爲650以下的材質，更理想是維氏硬度HV爲50 〜400的材質。 可使用於第1熱噴塗膜55及第2熱噴塗膜57的陶瓷，例 如可舉氧化鋁（Α12〇3)、氮化鋁（Α1Ν)等。並且，可使 用於第1熱噴塗膜55及第2熱噴塗膜57的金屬-陶瓷複合體 ，例如可舉鋁/氧化鋁的混合材、鋁/氮化鋁的混合材等。 第2熱噴塗膜57爲了以粗化後的微細的凹凸來支撐基板S， 較理想是以硬度要比在平滑部53支撐基板S的第1熱噴塗膜 55更低的材質所形成。基於如此的觀點，較理想是例如使 -14- 201145441 用氧化鋁、氮化鋁等的陶瓷作爲第1熱噴塗膜55及使用鋁/ 氧化鋁的混合材、鋁/氮化鋁的混合材等作爲第2熱噴塗膜 57之組合。另外，鋁/氧化鋁的混合材可使用與第1實施形 態同樣者。 基於容易控制粗化部51的表面粗度Ra的觀點，第2熱 噴塗膜57的膜厚是例如15μϊη〜25μπι爲理想。 絕緣膜8的粗化部51的表面粗度Ra是2μηι以上6μιη以下 ’較理想是2.5 μιη以上4.5 μπι以下。將粗化部51的表面粗度 Ra設爲2μηι以上6μπι以下的理由是與第1實施形態同樣。 並且，平滑部53的表面53a的表面粗度Ra是未滿2μιη， 較理想是0 · 4 μηι以上1 · 5 μπι以下。將平滑部5 3的表面5 3 a的 表面粗度Ra設爲未滿2μιη的理由是與第1實施形態同樣。 其次，一邊參照圖8〜圖12 —邊說明有關製造一在絕 緣膜8上具有粗化部51及平滑部53的載置台5Β之方法。首 先’如圖8所示’準備一構造體5b，其係具有基材7及覆蓋 此基材7的絕緣膜8b。在此，絕緣膜8b可爲層疊材質或成 膜法不同的複數的絕緣膜者。絕緣膜8b的至少最表面是藉 由例如熱噴塗前述陶瓷材料的熱噴塗法所形成的第1熱噴 塗膜55。藉由熱噴塗，在第1熱噴塗膜55露出粗糙的放射 表面。另外’藉由熱噴塗來形成絕緣膜8b時，有時形成有 氣孔’此情況爲了確保耐電壓性能，較理想是施以封孔處 理。 其次，如圖8所示’例如利用硏磨裝置200來機械硏磨 上述放射表面’而使均一地平滑化。在此硏磨工程是至絕 -15- 201145441 緣膜8a的表面粗度Ra形成未滿2μηι爲止實施硏磨。 其次，如圖9所示，以遮罩20 1來保護被平滑化的絕緣 膜8b的周緣部，將未被遮罩的內側部分予以例如利用噴砂 裝置2〇2來噴砂處理。藉由此噴砂加工來使絕緣膜8b的中 央部粗化的同時使減膜（亦即削掉表面，使膜厚變薄）。 噴砂處理是可藉由拉長處理時間或提高吐出壓來增大減膜 量。另外，在圖9是模式性地描繪比實際更強調絕緣膜8b 的表面的微細的凹凸（在圖10、圖12中同樣）。 圖10是表示粗化後的絕緣膜8b的狀態，又，圖11是擴 大顯示圖1 0的點線所包圍的部分。在絕緣膜8b的中央部分 形成有減膜部52。在減膜部52的周圍被遮罩201所保護的 區域留下平滑面’成爲平滑部S3。減膜部52的表面粗度Ra 爲了在之後的工程形成第2熱噴塗膜57時容易控制粗化部 51的表面粗度Ra ’較理想是例如設爲2μιη以上4μπι以下。 並且，減膜部52的減膜量是以平滑部53的表面爲基準，可 例如設爲3 0 μηι〜5 0 μιη。若減膜量過少，則難以在之後的 工程形成第2熱噴塗膜5 7，若減膜量過多，則絕緣膜8b的 絕緣性會降低，有時會有損耐壓性能。 其次’如圖1 2所示’再度利用遮罩2 〇 1來保護平滑部 53的表面之後，使用熱噴塗槍2〇3來只對減膜部52進行熱 噴塗’形成第2熱噴塗膜57。第2熱噴塗膜57是形成於被粗 化的第1熱噴塗膜55上’因此表面粗度Ra是形成2μηι以上 6μιη以下的粗化部5丨（參照圖6 )。藉由如此在預先被粗化 的減膜部52的表面層疊形成第2熱噴塗膜57，粗化部51的 -16 - 201145441 表面粗度的控制變得容易’且可藉由定錨效應來牢固地黏 著下層的第1熱噴塗膜55與第2熱噴塗膜57。 在減膜部52的周圍被遮罩201所保護的區域留下平滑 面，成爲平滑部53。平滑部53是硏磨表面原封不動留下， 因此表面粗度Ra爲未滿2μιη » 改變第1熱噴塗膜55及第2熱噴塗膜57的材質時是只要 在各個的成膜工程中選擇熱噴塗原料即可。例如在形成第 1熱噴塗膜55時是例如選擇氧化鋁（Al2〇3 )、氮化鋁（ Α1Ν)等的陶瓷材料作爲熱噴塗原料，在形成第2熱噴塗膜 5 7時是例如選擇鋁/氧化鋁的混合材、鋁/氮化鋁的混合材 等的金屬-陶瓷複合體作爲熱噴塗原料，藉此使第1熱噴塗 膜55與第2熱噴塗膜57的硬度具有差異。可藉由以上那樣 的程序來製造本實施形態的載置台5Β(參照圖6) » 如以上那樣製造之本實施形態的載置台5Β是在基板載 置面50具有表面粗度Ra爲2μηι以上6μιη以下的粗化部51 ( 具有以第1熱噴塗膜55作爲下層而形成的第2熱噴塗膜57) 、及表面粗度Ra爲未滿2μιη的平滑部53，因此傷及基板S 的憂慮少，且可防止蝕刻斑等發生。 本實施形態的其他構成及效果是與第1實施形態同樣 [電漿蝕刻裝置的適用例] 其次，一邊參照圖13及圖14，一邊說明有關將本發明 的基板載置台適用於電漿蝕刻裝置的實施形態。如圖1 3所 -17- 201145441 示，電漿蝕刻裝置100是構成對於FPD用的基板S進行蝕刻 之電容耦合型的平行平板電漿蝕刻裝置。另外，FPD是例 如有液晶顯示器 （LCD )、電激發光 （Electro Luminescence; EL)顯示器、電發顯示器面板（PDP)等 〇 此電漿蝕刻裝置100是具有表面被陽極氧化處理（防 蝕鋁處理）之鋁所構成的方简形狀的處理容器1。處理容 器1是藉由底壁la及4個的側壁lb (僅側壁llM，lb2的2個圖 示）所構成。並且，在處理容器1的上部接合有蓋體lc。 蓋體1 c是藉由未圖示的開閉機構來構成可開閉。在關 閉蓋體1 c的狀態下，蓋體1 c與各側壁1 b的接合部分是藉由 0型環等的密封構件3所密封，保持處理容器1內的氣密性 〇 在處理容器1內的底部配置有絕緣構件60、及設於此 絕緣構件60上的下部基材61。在下部基材61上設有可載置 基板S的載置台5。亦爲下部電極的載置台5是具有基材7、 及形成於基材7上的絕緣膜8。此絕緣膜8的表面是形成載 置基板S的基板載置面50。此載置台5可適用上述第1實施 形態的載置台5A或第2實施形態的載置台5B。因此，在以 下的說明是圖示省略，但實際在絕緣膜8的基板載置面50 設有表面粗度Ra爲2μιη以上6μηι以下的粗化部51、及表面 粗度Ra爲未滿2μιη的平滑部53 » 在下部基材61的內部設有傳熱媒體室83。在此傳熱媒 體室83中，例如氟系液體等的傳熱媒體會經由傳熱媒體導 -18- 201145441 入管83a來導入’且經由傳熱媒體排出管83b來排出，而構 成循環。此傳熱媒體的熱（例如冷熱）是經由下部基材61 及載置台5來對基板S傳熱。載置台5、下部基材61及絕緣 構件60的側部是藉由絕緣構件13所包圍。藉由絕緣構件13 來確保載置台5的側面的絕緣性，防止電漿處理時的異常 放電。 在載置台5的上方設有與此載置台5平行且對向而作爲 上部電極功能的淋浴頭15。淋浴頭15是被處理容器1的上 部的蓋體lc所支持。淋浴頭15是成中空狀，在其內部設有 氣體擴散空間1 5 a。並且，在淋浴頭〗5的下面（與載置台5 對向的面）形成有吐出處理氣體的複數個氣體吐出孔l5b 。此淋浴頭I5是被接地，與載置台5—起構成一對的平行 平板電極。 在淋浴頭15的上部中央附近設有氣體導入口17。在此 氣體導入口 I7連接處理氣體供給管19。此處理氣體供給管 19是經由2個的閥21，21及質量流控制器（MFC) 23來連 接供給蝕刻用的處理氣體的氣體供給源2 5。處理氣體，例 如鹵素系氣體或02氣體以外，還可使用Ar氣體等的稀有氣 體》 在接近前述處理容器1內的4個角落的位置，於底壁ia 形成有4處作爲貫通開口部的排氣用開口 27 (僅圖示2個） 。在各排氣用開口 27連接排氣管29。排氣管29是在其端部 具有凸緣部29 a，在使0型環（圖示省略）介於此凸緣部 29a與底壁la之間的狀態下被固定。排氣管29是連接至排 -19- 201145441 氣裝置31。排氣裝置31是例如具備渦輪分子泵等的真空泵 ，藉此構成可將處理容器1內抽真空至所定的減壓環境。 並且，在處理容器1的側壁lb,設有作爲貫通開□部的 基板搬送用開口 33。此基板搬送用開口 33是藉由閘閥35來 開閉，可在與鄰接的搬送室（圖示省略）之間搬送基板S 。閘閥35是在使第1密封構件的Ο型環37介於與側壁11^2 間的狀態下，利用螺絲等的固定手段來固定於側壁1 b ,。 在下部基材61連接給電線39。此給電線39是經由匹配 箱（M.B.) 41來連接高頻電源43。藉此，從高頻電源43經 由下部基材61來供給例如13.5 6MHz的高頻電力至作爲下部 電極的載置台5。另外，給電線3 9是經由形成於底壁1 a之 作爲貫通開口部的給電用開口 45來導入至處理容器1內。 其次，說明有關以上那榇構成的電漿蝕刻裝置1 00的 處理動作。首先，在閘閥35開放的狀態下，被處理體的基 板S會藉由未圖示的搬送裝置的叉構件經由基板搬送用開 口 33來搬入至處理容器1內，交接至載置台5。此時，載置 台5因爲在基板載置面50具有未圖示之表面粗度Ra爲2 μπι 以上6μιη以下的粗化部51、及表面粗度Ra爲未滿2μηι的平 滑部5 3，所以在粗化部5 1能以微細的凹凸所成的多點來支 撐基板S。其結果’應力會被分散，惕及基板S的背面之憂 慮少。 又，由於平滑部53可使基板緊貼而支撐，因此可容易 在基板S的背面側形成密閉空間。然後，關閉閘閥3 5，藉 由排氣裝置31來將處理容器1內抽真空至所定的真空度。 -20- 201145441 其次，將閥21開放，而使處理氣體從氣體供給源25經 由處理氣體供給管19、氣體導入口 17來導入至淋浴頭15的 氣體擴散空間1 5 a。此時，藉由質量流控制器2 3來進行處 理氣體的流量控制。被導入至氣體擴散空間1 5a的處理氣 體更經由複數的吐出孔15b來對載置於載置台5上的基板S 均一地吐出，處理容器1內的壓力會被維持於所定的値。 在此狀態下從高頻電源43施加高頻電力至載置台5。 藉此，在作爲下部電極的載置台5與作爲上部電極的淋浴 頭15之間產生高頻電場，處理氣體會解離而電漿化。藉由 此電漿來對基板S實施蝕刻處理。 在實施蝕刻處理後，停止來自高頻電源43的高頻電力 的施加，停止氣體導入後，將處理容器1內減壓至所定的 壓力。其次，開放閘閥35，從載置台5交接基板S至未圖示 的搬送裝置的叉構件，自處理容器1的基板搬送用開口 33 搬出基板S。藉由以上的操作，完成對基板S的電漿蝕刻處 理。藉由重複進行如此的電漿蝕刻處理，即使在處理容器 1內產生蝕刻生成物附著於粗化部5 1，也會因爲具有微細 的凹凸之粗化部5 1難平坦化，所以可抑制從載置台5往基 板S的熱傳導效率及導電效率的變動。因此，可防止例如 蝕刻斑等的處理不均一。 又，本發明的基板載置台亦可兼備靜電吸附功能。例 如圖1 4所示的電漿蝕刻裝置1 0 1是使用具有靜電吸附功能 的載置台5C作爲基板載置台。圖14所示的電漿蝕刻裝置 101的其他構成是與圖13的電漿蝕刻裝置1〇〇同樣，因此對 -21 - 201145441 於同樣的構成附上同一符號而省略說明。 基板載置台的載置台5 C是具有由鋁等的導電性材料所 構成的基材65。此基材65是相當於第1及第2實施形態的基 材7。在此基材65的上面，由下依序層疊有第1絕緣層67、 電極69及第2絕緣層71。此第2絕緣層71是相當於第1及第2 贲施形態的基板載置台5A，5B的絕緣膜8»藉由從直流電 源73經由給電線75來對第1絕緣層67與第2絕緣層71之間的 電極69施加直流電壓，可例如藉由庫倫力來靜電吸附基板 S。在第2絕緣層71的上面是形成有吸附保持基板S的基板 載置面50。雖圖示省略，但實際在基板載置面50設有表面 粗度Ra爲2μιη以上6μηι以下的粗化部5 1、及表面粗度Ra爲 未滿2μιη的平滑部53。 在前述絕緣構件60及下部基材61形成有貫通該等的氣 體通路77。可經由此氣體通路77來供給傳熱氣體例如He氣 體等至基板S的背面。亦即，載置台5C是具備對基板S的背 面供給傳熱氣體而冷卻的背散熱機構。被供給至氣體通路 77的傳熱氣體是經由形成於下部基材61與基材65的境界之 氣體積存部79來一旦擴散於水平方向後，通過形成於基材 65內的氣體供給連通穴81，從載置台5C的表面噴出至基板 S的背側。如此一來，載置台5C的冷熱會被傳達至基板s， 基板S會被維持於所定的溫度。 具有以上的構成之本實施形態的載置台5C，因爲具備 靜電吸附機構，所以在基板載置面5 0強力吸附基板S，但 藉由在粗化部5 1其微細的凸部中以多點接觸基板s來支撐 -22- 201145441 基板S下，可分散應力。其結果，可防止傷及基板S的背面 。並且，即使蝕刻所產生反應生成物或微粒等附著於粗化 部5 1，也會因爲微細的凹凸存在，所以難形成平坦面。又 ，由於平滑部53可藉由其平滑的表面來與基板S的背面緊 貼，因此可在基板S的背面與粗化部5 1之間形成密閉空間 ，有效率地進行利用前述傳熱氣體的熱傳達。所以，即是 重複蝕刻製程，還是可使從載置台5C往基板S的熱傳達在 基板S的面內形成均一，可防止蝕刻斑的發生。 以上，以例示的目的來詳細說明本發明的實施形態， 但本發明並非限於上述實施形態。該當業者可在不脫離本 發明的思想及範圍內實施更多的改變，該等亦含於本發明 的範圍內。例如，本發明並非限於以FPD用基板作爲處理 對象的電漿處理裝置，亦可適用於例如以半導體晶圓作爲 處理對象的電漿處理容器。又，亦非限於電漿蝕刻裝置， 亦可適用於例如進行電漿灰化處理、電漿CVD處理等其他 的電漿處理的電漿處理裝置。 【圖式簡單說明】 圖1是本發明的第1實施形態的載置台的平面圖。 圖2是圖1的II-II線箭號所視的剖面圖。 圖3是擴大顯示圖2的載置台的表面附近的構造的要部 剖面圖。 圖4是說明第1實施形態的載置台的製造工程的圖面。 圖5是說明接續於圖4的工程的圖面。 -23- 201145441 圖6是本發明的第2實施形態的載置台的剖面圖。 圖7是擴大顯示圖6的載置台的表面附近的構造的要部 剖面圖。 圖8是說明第20施形態的載置台的製造工程的圖面。 圖9是說明接續於圖8的工程的圖面。 圖1 〇是表示粗化後的絕緣膜的狀態的圖面。 圖1 1是擴大顯示粗化後的載置台的表面附近的構造的 要部剖面圖》 圖12是說明接續於圖1〇的工程的圖面。 圖1 3是表示適用本發明的基板載置台的電漿蝕刻裝置 之一例的槪略剖面圖。 圖1 4是表示適用本發明的基板載置台的電漿蝕刻裝置 的別的例的槪略剖面圖。 【主要元件符號說明】 1 :處理容器 1 a :底壁 Ibi，lb2 :側壁 1 c :蓋體 3 :密封構件 1 3 :絕緣構件 5 :載置台 7 :基材 8 :絕緣膜 -24- 201145441 1 5 :淋浴頭 1 5 a :氣體擴散空間 15b :氣體吐出孔 17 :氣體導入口 1 9 :處理氣體供給管 21 :閥 2 3 :質量流控制器 2 5 :氣體供給源 2 7 :排氣用開口 29 :排氣管 3 1 :排氣裝置 3 3 :基板搬送用開口 3 5 :閘閥 3 7 : Ο型環 3 9 :給電線 4 1 :匹配箱（M . B .) 43 :高頻電源 4 5 :給電用開口 5 〇 =基板載置面 5 1 :粗化部 5 3 :平滑部 1 0 0，1 0 1 :電漿蝕刻裝置 S :基板 -25-201145441 VI. [Technical Field] The present invention relates to a substrate mounting table on which a substrate is placed, a method of manufacturing the same, and a substrate processing apparatus. [Prior Art] In the manufacturing process of a planar right angle display (FPD), a plasma etching process is performed on a substrate of a processed body. In the plasma etching treatment, for example, in a processing container in which a pair of parallel plate electrodes (upper and lower electrodes) are disposed, the substrate is placed on a mounting table having a function as a lower electrode, and high-frequency power is applied to at least one of the electrodes. A high frequency electric field is formed between the electrodes. The plasma of the processing gas is formed by the high-frequency electric field, whereby the material film on the substrate is etched by the plasma. When the plasma etching treatment is repeated, an etching product is generated and adheres to the surface of the mounting table to be accumulated. When the surface of the mounting table is a smooth surface, a region where the deposit is interposed between the back surface of the substrate and the mounting table causes a difference in thermal conductivity or conductivity between the regions where the deposit does not exist. As a result, a portion having a high etching rate and a low portion are formed in the surface of the substrate to generate an etching spot. Further, there is a case where the substrate is attached to the mounting table due to the adhering matter. In order to prevent etching spots, a mounting table having an Emboss shape on the surface is known. For example, Patent Document 1 has a plurality of convex portions on which the top surface is roughened on the surface of the mounting table, and the distance between the substrate and the surface of the mounting table is maintained, whereby the occurrence of etching spots can be prevented even if deposits are formed on the surface of the mounting table. Further, in Patent Document 1, it is proposed to form a smooth land portion around the mounting table -5 - 201145441, and to improve the heat transfer efficiency of the heat transfer medium when the mounting table has a function as an electrostatic adsorption electrode. Further, Patent Document 2 proposes to prevent the fine particles from being attached to the mounting table, to suppress the fine particles, and to improve the process stability. It is proposed to sandblast the surface of the mounting table for plasma CVD to form uneven portions and to have a surface roughness Ra. After forming Ιμηι or more and 8 μm or less, the sharp protrusions of the convex portions are more chemically, electrochemically, and/or mechanically removed. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2006-351949 (Patent Document 2) Japanese Laid-Open Patent Publication No. Hei No. 10-340896. Since the contact portion of the convex portion is in point contact with the substrate, stress is concentrated on the contact portion, which may cause damage to the substrate. On the other hand, when the entire surface of the mounting table is formed into a roughened surface, when the mounting table has a function as an electrostatic adsorption electrode, the supply of the heat transfer medium to the back side of the substrate is unstable, and the control of the heat transfer efficiency is changed. Difficulties, there may be a plaque. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a mounting table which can effectively prevent the occurrence of etching spots without damaging the substrate. 201145441 (Means for Solving the Problem) The substrate mounting table of the present invention includes a substrate and an insulating film covering the substrate. The substrate mounting surface on which the substrate is placed is formed by the insulating film, and the substrate mounting surface is mounted on the substrate The surface has a roughened portion having a surface roughness Ra of 2 μm or more and 6 μm or less, and a smoothed portion having a surface roughness Ra provided around the roughened portion of less than 2 μm. Further, in the substrate stage of the present invention, the central portion of the substrate is supported by the roughened portion, and the peripheral portion of the substrate is supported by the smooth portion. Further, in the substrate mounting table of the present invention, at least the roughened portion is formed of a material having a hardness equal to or less than the hardness of the substrate. Further, the substrate mounting table of the present invention has the insulating film formed by thermal spraying. The first thermal spray coating film and the second thermal spray coating formed by thermal spraying so as to cover at least a part of the first thermal spray coating are stacked on the upper surface of the first thermal spray coating. The second thermal spray coating is preferred. In this case, the surface of the smooth portion is preferably formed by the first thermal spray coating. Further, the second thermal spray coating is preferably formed of a material having a hardness equal to or less than the hardness of the substrate. In this case, the material of the first thermal spray coating and the second thermal spray coating may be different, and the second thermal spray coating may be formed of a material having a hardness equal to or less than the hardness of the first thermal spray coating. Further, the substrate mounting table of the present invention has a conductive layer embedded in the insulating film, and is preferably provided with an electrostatic adsorption function. The substrate processing apparatus of the present invention includes any one of the above-described substrate mounting bases 201145441. The manufacturing method of the substrate mounting table according to the present invention is a method of manufacturing a substrate mounting table on which a substrate is placed during processing, and includes: honing Engineering for honing the surface of the insulating film covering the substrate to form a smooth surface having a surface roughness Ra of less than 2 μm; and roughening the surface of the insulating film after honing A region in which the peripheral portion of the substrate mounting surface leaves a smooth surface is subjected to sand blasting to a region which is a central portion of the substrate mounting surface, and a roughened portion having a surface roughness Ra of 2 μm or more and 6 μm or less is formed. Moreover, the method of manufacturing a substrate mounting table according to the present invention is a method of manufacturing a substrate mounting table on which a substrate is placed during processing, and includes a honing process for honing an insulating film covering the substrate. On the surface, the surface roughness Ra is a smooth surface of less than 2 μm, and the surface of the insulating film after the honing is such that the surface can be formed as a smooth surface in a region which is a peripheral portion of the substrate mounting surface. The area of the central portion of the mounting surface is subjected to a sand blasting process to reduce the film: and a thermal spray film having a surface roughness Ra of 2 μm or more and 6 μm or less is formed by thermal spraying on a region of the central portion of the film to be reduced. The method of manufacturing the substrate stage of the present invention is preferably a thermal spray film formed by thermal spraying. [Effects of the Invention] The substrate mounting table of the present invention has a roughened portion having a surface roughness Ra -8 - 201145441 of 2 μm or more and 6 μm or less on the substrate mounting surface, and a surface roughness Ra of the periphery of the roughened portion. Smooth portion less than 2μιη. Since the roughened portion can be supported by a plurality of points of fine concavities and convexities, stress is dispersed and there is little concern that the back surface of the substrate is damaged. In addition, since the roughened portion having fine irregularities is difficult to planarize even if an adherent is generated, it is possible to suppress variations in heat transfer efficiency and conductive efficiency from the substrate mounting table to the substrate. Therefore, the process of improving the etching spot or the like can be made uneven, for example. Further, since the smooth portion can be supported by the substrate, it is easy to form a sealed space on the back side of the substrate. For example, when a heat transfer medium is introduced into the space to adjust the temperature, the heat transfer efficiency can be improved. [Embodiment] [First Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 is a plan view showing a mounting table 5A of a substrate mounting table according to a first embodiment of the present invention. Figure 2 is a cross-sectional view of the ΙΙ-ΙΙ line arrow of Figure 1. Further, Fig. 3 is a cross-sectional view of an essential part showing a structure in which the surface of the mounting table 5A of the portion surrounded by the dotted line of Fig. 2 is enlarged. The mounting table 5 includes a base material 7 and an insulating film 8 provided on the base material 7. The substrate 7 is formed, for example, of a conductive material such as aluminum or stainless steel (S U S ). The upper surface of the insulating film 8 is a substrate mounting surface 50 on which, for example, a glass substrate (hereinafter referred to as "substrate") S for mounting F P D is formed. The substrate mounting surface 50 is a roughened portion 51 having a rough surface having a surface roughness Ra of 2 μm or more and 6 μm or less, and a surface roughness Ra surrounding the roughened portion 51 being less than 2 μm - -9 - 201145441 Sliding portion 53. The roughened portion 51 of the insulating film 8 on the upper surface of the mounting table 5A has fine irregularities as shown in Fig. 3 . The roughened portion 51 is such that the substrate S can be supported at a plurality of points in contact with the substrate S at its convex portion. As a result, it is possible to prevent the back surface of the substrate S from being damaged. Further, even if the reaction product or fine particles generated by the etching adhere to the roughened portion 51, it is difficult to form a flat surface due to the presence of fine irregularities, and the etching spot can be suppressed. The surface roughness Ra of the roughened portion 51 is 2 μm or more and 6 μm or less, and more preferably 2. 5μηι or more 4. 5μηι or less. In the mounting table 5, if the surface roughness Ra of the roughened portion 51 is a smooth surface of less than 2 μm, the etching product is applied to the surface of the insulating film 8 to be deposited by repeating the etching process. With this deposit, heat transfer from the mounting table 5 to the substrate S causes unevenness in the surface of the substrate S, and an etch spot may occur. Further, the surface roughness Ra of the roughened portion 51 is more than 6 μm, which is difficult to handle, and when the surface roughness Ra is too large, the contact with the substrate is reduced, and damage is likely to occur, and the insulating film 8 may not be sufficiently secured. Pressure resistance. Further, the surface roughness Ra of the surface 53a of the smooth portion 53 is less than 2 μm, preferably 0. 4 μπι or more 1. 5 μηι or less. By placing the surface roughness Ra of the surface 53a of the smooth portion 53 at less than 2 μm, the back surface of the peripheral portion of the substrate S can be brought into close contact with the surface 53a of the smooth portion 53 when the substrate S is placed on the mounting table 5A. Thereby, a sealed space can be formed between the substrate S and the roughened portion 51 of the insulating film 8, and particularly when the heat transfer gas is supplied to the back surface of the substrate S for temperature control, the heat transfer gas can be closed to the substrate. The space on the back side of S, thus improving heat transfer efficiency. In addition, the surface roughness Ra means the arithmetic mean roughness of -10-201145441 which is defined in JIS B0601 - 994, and the reference length is determined by the thickness curve in the direction of the average line thereof, and the total is within the reference length from the average line. The absolute enthalpy of the deviation from the measured roughness curve indicates the average enthalpy in micrometers (μιη). The height relationship between the roughened portion 51 and the surface 53a of the smooth portion 53 is set such that the surface 5 3 a of the smooth portion 53 is more than the average sound of the apex of the convex portion of the roughened portion 5 1 , for example, 15 to 25 μm (more ideally 20μηι). The insulating film 8 may be a single layer or a plurality of insulating films having different materials. However, in order to prevent the substrate S from being damaged, the outermost layer is preferably formed of a material having the same or lower hardness as the substrate S, and more preferably It is formed of a material having a lower hardness than the substrate S. Here, when the substrate S is a glass substrate, since the Vickers hardness HV is about 650, it is preferable that the outermost layer of the insulating film 8 has a Vickers hardness HV of 650 or less, and more preferably, the Vickers hardness HV is 50 to 400 materials. The material of the outermost layer of the insulating film 8 is, for example, a ceramic or a metal-ceramic composite or the like. Examples of the ceramics include alumina (αι2ο3), aluminum nitride (Α1Ν), and the like. Further, the metal-ceramic composite is, for example, a mixed material of aluminum/aluminum oxide or a mixed material of aluminum/aluminum nitride. When the metal-ceramic composite is a mixture of aluminum/alumina, for example, a mixed metal aluminum or an alloy containing 50% by volume or more of aluminum and a thermal spray material of alumina having an average particle diameter of 3 to 20 μm may be used. The thermal spray method is used to form the insulating film 8 (or its outermost layer). The content of alumina in the aluminum/aluminum mixed material is, for example, 20 to 4 〇% by volume based on the viewpoint of pressing the Vickers hardness HV to 50 to 400. Next, a method of manufacturing the mounting table 5 having the roughened portion 51 and the smoothed portion 53 on the insulating film 8 will be described with reference to Figs. 4 and 5 . First, -11 - 201145441 As shown in Fig. 4, a structure 5a having a substrate 7 and an insulating film 8a covering the substrate 7 is prepared. Further, the insulating film 8a may be formed of a plurality of insulating films (not limited to thermal spray films) having different laminated materials or film forming methods. At least the outermost surface of the insulating film 8a can be formed by a thermal spraying method such as thermal spraying of the aforementioned ceramic or metal-ceramic composite. A rough radiation surface is exposed on the insulating film 8a by thermal spraying. Further, when the insulating film 8a is formed by thermal spraying, pores may be formed. In order to ensure the withstand voltage performance, it is preferable to apply a sealing treatment. Next, as shown in Fig. 4, for example, a honing device is used. 200 to mechanically honed the above-mentioned radiation surface to make it uniform smooth. In the honing process, honing is performed until the surface roughness Ra of the insulating film 8a is less than 2 μm. Next, as shown in Fig. 5, the peripheral portion of the smoothed insulating film 8a is protected by the mask 201, and the uncovered inner portion is sandblasted by, for example, the sand blasting device 202. The method of the blasting treatment is not particularly limited, and a rough surface having a surface roughness Ra of 2 μm or more and 6 μm or less may be formed. For example, alumina (Α1203), tantalum carbide (SiC), zirconia (Zr03), or the like may be used. The honing material is carried out. By this sandblasting, the central portion of the insulating film 8a is roughened to form a roughened portion 51 having a surface roughness Ra of 2 μϊ or more and 6 μηι or less. In the case of the OFF 5, the fine unevenness of the surface of the roughened portion 51 is more emphasized than the actual one. The area protected by the mask 201 around the roughened portion 51 leaves a smooth surface and becomes the smooth portion 53. The smoothing portion 53 is such that the honing surface remains intact, so that the surface roughness Ra is less than 2 μm. The mounting table 5A of the present embodiment can be manufactured by such a procedure (see Figs. 1 to 3). -12-201145441 The mounting table 5A of the present embodiment manufactured as described above has a roughened portion 51 having a surface roughness Ra of 2 μm or more and 6 μm or less on the substrate mounting surface 50, and a smoothness of the surface roughness Ra of less than 2 μm. Since the portion 53 is less likely to be damaged by the substrate S, it is possible to prevent the occurrence of etching spots and the like. Further, in the above description, only the minimum configuration of the mounting table 5' is described, but the mounting table 5 is not hindered from having another configuration. For example, the mounting table 5 may have a function as an electrostatic adsorption electrode including an electrode layer embedded in the insulating film 8, or may have a back heat dissipation from the substrate mounting surface 50 to the back surface of the substrate S to supply a heat transfer gas. mechanism. [Second Embodiment] Next, a substrate stage according to a second embodiment of the present invention will be described with reference to Figs. 6 to 12 . Fig. 6 is a cross-sectional view of the mounting table 5B of the embodiment, and Fig. 7 is a cross-sectional view of an essential part showing a structure in the vicinity of the surface of the mounting table 5B of the portion surrounded by the dotted line of Fig. 6 . The mounting table 5B has a base material 7 and an insulating film 8 provided on the base material 7. The upper surface of the insulating film 8 has a roughened portion 51 having a rough surface having a surface roughness Ra of 2 μm or more and 6 μm or less, and a smooth portion 53 surrounding the roughened portion 51 with a surface roughness Ra of Less than 2μιη. As shown in FIG. 7, the roughened portion 51 has a first thermal spray film 55 formed by thermal spraying, and a second surface layer which is laminated on the first thermal spray film 55 by thermal spraying. Thermal spray film 57. The surface of the second thermal spray film 57 is -13-201145441 which becomes the radiation surface of the thermal spray. The roughened portion 51 is such that the second thermal spray film 57 is exposed as the outermost layer, and the first thermal spray film 55 is provided in a lower layer (preferably connected to the second thermal spray film 57) than the second thermal spray film 57. Yes, there may be other layers (not limited to thermal spray films). Further, the surface layer of the smooth portion 53 is exposed to the first thermal spray film 55. The height relationship between the roughened portion 51 and the surface 53a of the smooth portion 53 is set such that the surface 5 3 a of the smooth portion 53 is higher than the average height of the apex of the convex portion of the rough portion 5 1 by, for example, 15 to 25 μm ( More preferably 20μηι). The material of the first thermal spray coating 55 and the second thermal spray coating 57 is, for example, a ceramic or a metal-ceramic composite. The first thermal spray film 55 and the second thermal spray film 57 can be formed using the same material or different materials. The second thermal spray film 57 is formed so as not to damage the substrate S, and is preferably made of a material having the same or lower hardness as the substrate S, and more preferably a material having a lower hardness than the substrate S. Here, when the substrate S is a glass substrate, since the Vickers hardness HV is about 65 degrees, it is preferable that the second thermal spray film 57 has a Vickers hardness HV of 650 or less, and more preferably the Vickers hardness HV is 50 to 400 materials. The ceramic to be used for the first thermal spray coating 55 and the second thermal spray coating 57 may, for example, be alumina (Α12〇3) or aluminum nitride (Α1Ν). Further, the metal-ceramic composite body to be used for the first thermal spray coating 55 and the second thermal spray coating 57 may, for example, be a mixture of aluminum/aluminum oxide or a mixture of aluminum/aluminum nitride. The second thermal spray film 57 is preferably formed of a material having a lower hardness than the first thermal spray film 55 supporting the substrate S in the smooth portion 53 in order to support the substrate S with fine irregularities after roughening. From such a viewpoint, for example, it is preferable to use a ceramic such as alumina or aluminum nitride as the first thermal spray coating 55 and a mixture of aluminum/aluminum and a mixture of aluminum/aluminum nitride, and the like. As a combination of the second thermal spray coatings 57. Further, the aluminum/aluminum mixed material can be used in the same manner as in the first embodiment. The film thickness of the second thermal spray film 57 is preferably 15 μϊ to 25 μm, for example, from the viewpoint of easily controlling the surface roughness Ra of the roughened portion 51. The surface roughness Ra of the roughened portion 51 of the insulating film 8 is 2 μηι or more and 6 μmη or less. 5 μιη or more 4. 5 μπι or less. The reason why the surface roughness Ra of the roughened portion 51 is 2 μm or more and 6 μm or less is the same as that of the first embodiment. Further, the surface roughness Ra of the surface 53a of the smooth portion 53 is less than 2 μm, and preferably 0·4 μηι or more and 1 · 5 μπι or less. The reason why the surface roughness Ra of the surface 5 3 a of the smooth portion 53 is less than 2 μm is the same as that of the first embodiment. Next, a method of manufacturing a mounting table 5 having a roughened portion 51 and a smooth portion 53 on the insulating film 8 will be described with reference to Figs. 8 to 12 . First, as shown in Fig. 8, a structure 5b having a substrate 7 and an insulating film 8b covering the substrate 7 is prepared. Here, the insulating film 8b may be a plurality of insulating films having a laminated material or a different film forming method. At least the outermost surface of the insulating film 8b is a first thermal spray coating film 55 formed by a thermal spraying method such as thermal spraying of the ceramic material. The first thermal spray film 55 is exposed to a rough radiation surface by thermal spraying. Further, when the insulating film 8b is formed by thermal spraying, a pore may be formed. In order to ensure the withstand voltage performance, it is preferable to apply a sealing treatment. Next, as shown in Fig. 8, 'the radiant surface 200 is mechanically honed, for example, by the honing device 200, and is uniformly smoothed. In this honing process, the honing is performed until the surface roughness Ra of the film 8a is less than 2 μm. Next, as shown in Fig. 9, the peripheral portion of the smoothed insulating film 8b is protected by the mask 20 1 , and the uncovered inner portion is sandblasted by, for example, a sand blasting device 2 2 . By this sandblasting, the central portion of the insulating film 8b is roughened and the film is reduced (i.e., the surface is cut off to make the film thickness thin). The blasting treatment can increase the amount of film reduction by elongating the treatment time or increasing the discharge pressure. In addition, FIG. 9 schematically depicts fine unevenness (the same as in FIGS. 10 and 12) that emphasizes the surface of the insulating film 8b more than actually. Fig. 10 is a view showing a state in which the insulating film 8b is roughened, and Fig. 11 is a portion in which the dotted line of Fig. 10 is enlarged. A film-reducing portion 52 is formed at a central portion of the insulating film 8b. A smooth surface S is left in the region surrounded by the mask 201 around the film-reducing portion 52, and becomes a smooth portion S3. The surface roughness Ra of the film-reducing portion 52 is preferably 2 μm or more and 4 μm or less in order to easily control the surface roughness Ra of the roughened portion 51 when the second thermal spray film 57 is formed in the subsequent process. Further, the amount of film reduction by the film-reducing portion 52 is based on the surface of the smooth portion 53, and may be, for example, 30 μm to 50 μm. When the amount of the film is too small, it is difficult to form the second thermal spray film 5 in the subsequent process. If the amount of the film is too large, the insulation of the insulating film 8b is lowered, and the pressure resistance may be impaired. Next, 'as shown in Fig. 12', after the surface of the smooth portion 53 is again protected by the mask 2 〇 1, the thermal spray gun 2〇3 is used to thermally spray only the film-reducing portion 52 to form the second thermal spray film 57. . The second thermal spray film 57 is formed on the first heat-sprayed film 55 that has been roughened. Therefore, the surface roughness Ra is a roughened portion 5丨 (see Fig. 6) of 2 μm or more and 6 μm or less. By forming the second thermal spray film 57 on the surface of the thinned portion 52 which has been roughened in advance as described above, the control of the surface roughness of the roughened portion 51 from -16 to 2011454 is made easy and can be achieved by the anchoring effect. The lower first thermal spray film 55 and the second thermal spray film 57 are firmly adhered. The area protected by the mask 201 around the film-reducing portion 52 leaves a smooth surface and becomes the smooth portion 53. Since the smooth surface 53 is left as it is, the surface roughness Ra is less than 2 μm. » When the materials of the first thermal spray film 55 and the second thermal spray film 57 are changed, heat is selected in each film forming process. Spray the raw materials. For example, when the first thermal spray film 55 is formed, for example, a ceramic material such as alumina (Al 2 〇 3 ) or aluminum nitride (alumina) is selected as the thermal spray material, and when the second thermal spray film 57 is formed, for example, aluminum is selected. A metal-ceramic composite such as a mixed material of alumina or a mixture of aluminum/aluminum nitride is used as a thermal spray material, whereby the hardness of the first thermal spray coating 55 and the second thermal spray coating 57 is different. The mounting table 5 of the present embodiment can be manufactured by the above-described procedure (see FIG. 6). The mounting table 5 of the present embodiment manufactured as described above has a surface roughness Ra of 2 μm or more and 6 μm on the substrate mounting surface 50. The following roughened portion 51 (having the second thermal spray film 57 formed by the first thermal spray film 55 as the lower layer) and the smooth portion 53 having the surface roughness Ra of less than 2 μm are less likely to be damaged by the substrate S. And can prevent the occurrence of etching spots and the like. Other configurations and effects of the present embodiment are the same as those of the first embodiment. [Application examples of the plasma etching apparatus] Next, the substrate mounting table of the present invention will be applied to a plasma etching apparatus with reference to FIGS. 13 and 14 . The embodiment. As shown in Fig. 13 -17-201145441, the plasma etching apparatus 100 is a capacitively coupled parallel plate plasma etching apparatus which constitutes etching of the substrate S for FPD. In addition, the FPD is, for example, a liquid crystal display (LCD), an electroluminescence (EL) display, an electric display panel (PDP), etc., and the plasma etching apparatus 100 has an anodized surface (aluminum treatment) A processing container 1 having a square shape formed of aluminum. The processing container 1 is constituted by a bottom wall la and four side walls lb (only two of the side walls 11M, 1b). Further, a lid lc is joined to the upper portion of the processing container 1. The lid body 1 c is configured to be openable and closable by an opening and closing mechanism (not shown). In a state where the lid body 1 c is closed, the joint portion of the lid body 1 c and each side wall 1 b is sealed by the sealing member 3 such as a 0-ring or the like, and the airtightness in the processing container 1 is maintained in the processing container 1 The inner bottom portion is provided with an insulating member 60 and a lower base member 61 provided on the insulating member 60. The lower substrate 61 is provided with a mounting table 5 on which the substrate S can be placed. The mounting table 5, which is also a lower electrode, has a substrate 7 and an insulating film 8 formed on the substrate 7. The surface of this insulating film 8 is a substrate mounting surface 50 on which the substrate S is placed. The mounting table 5 can be applied to the mounting table 5A of the first embodiment or the mounting table 5B of the second embodiment. Therefore, in the following description, the substrate mounting surface 50 of the insulating film 8 is provided with a roughened portion 51 having a surface roughness Ra of 2 μm or more and 6 μm or less, and a surface roughness Ra of less than 2 μm. Smoothing portion 53 » A heat transfer medium chamber 83 is provided inside the lower substrate 61. In the heat transfer medium chamber 83, a heat transfer medium such as a fluorine-based liquid is introduced into the tube 83a via the heat transfer medium guide -18-201145441 and discharged through the heat transfer medium discharge tube 83b to constitute a circulation. The heat (for example, heat and cold) of the heat transfer medium transfers heat to the substrate S via the lower substrate 61 and the mounting table 5. The side portions of the mounting table 5, the lower base member 61, and the insulating member 60 are surrounded by the insulating member 13. The insulating member 13 ensures the insulation of the side surface of the mounting table 5 and prevents abnormal discharge during plasma processing. Above the mounting table 5, a shower head 15 which is parallel to the mounting table 5 and which functions as an upper electrode is provided. The shower head 15 is supported by a lid lc of the upper portion of the container 1 to be processed. The shower head 15 is hollow and has a gas diffusion space 15 5a inside. Further, a plurality of gas discharge holes 15b for discharging the processing gas are formed on the lower surface of the shower head 5 (the surface facing the mounting table 5). The shower head I5 is a parallel plate electrode that is grounded and forms a pair with the mounting table 5. A gas introduction port 17 is provided near the center of the upper portion of the shower head 15. Here, the gas introduction port I7 is connected to the processing gas supply pipe 19. This processing gas supply pipe 19 is connected to a gas supply source 25 for supplying a processing gas for etching via two valves 21, 21 and a mass flow controller (MFC) 23. In addition to the processing gas, for example, a halogen gas or a 02 gas, a rare gas such as an Ar gas may be used. At a position close to the four corners in the processing chamber 1, four rows of the through openings are formed in the bottom wall ia. Air opening 27 (only two are shown). The exhaust pipe 29 is connected to each of the exhaust openings 27. The exhaust pipe 29 has a flange portion 29a at its end portion, and is fixed in a state in which an O-ring (not shown) is interposed between the flange portion 29a and the bottom wall 1a. The exhaust pipe 29 is connected to the row -19-201145441 gas device 31. The exhaust device 31 is, for example, a vacuum pump including a turbo molecular pump or the like, and is configured to evacuate the inside of the processing container 1 to a predetermined reduced pressure environment. Further, the side wall 1b of the processing container 1 is provided with a substrate transfer opening 33 as a through opening portion. The substrate transfer opening 33 is opened and closed by the gate valve 35, and the substrate S can be transferred between the adjacent transfer chamber (not shown). The gate valve 35 is fixed to the side wall 1 b by a fixing means such as a screw in a state in which the Ο-shaped ring 37 of the first sealing member is interposed between the side wall 11 and the second side. The electric wire 39 is connected to the lower substrate 61. This feed line 39 is via a matching box (M. B. 41 is connected to the high frequency power source 43. Thereby, the high frequency power source 43 is supplied from the lower substrate 61, for example, 13. 5 6 MHz of high frequency power is supplied to the stage 5 as a lower electrode. Further, the electric wire 39 is introduced into the processing container 1 through the electric power supply opening 45 formed in the bottom wall 1a as a through opening. Next, the processing operation of the plasma etching apparatus 100 constructed as described above will be described. First, in the state in which the gate valve 35 is opened, the substrate S of the object to be processed is carried into the processing container 1 through the substrate transfer opening 33 by the fork member of the transfer device (not shown), and is delivered to the mounting table 5. In this case, the substrate mounting surface 50 has a roughened portion 51 having a surface roughness Ra of not less than 2 μm or more and 6 μm or less, and a smooth portion 5 having a surface roughness Ra of less than 2 μm. The substrate S can be supported by the roughened portion 51 at a plurality of points formed by fine concavities and convexities. As a result, the stress is dispersed, and there is little concern about the back surface of the substrate S. Further, since the smooth portion 53 can support the substrate in close contact with each other, it is easy to form a sealed space on the back side of the substrate S. Then, the gate valve 35 is closed, and the inside of the processing container 1 is evacuated to a predetermined degree of vacuum by the exhaust unit 31. -20- 201145441 Next, the valve 21 is opened, and the process gas is introduced from the gas supply source 25 into the gas diffusion space 15 5 a of the shower head 15 via the process gas supply pipe 19 and the gas introduction port 17. At this time, the flow rate control of the process gas is performed by the mass flow controller 23. The processing gas introduced into the gas diffusion space 15a is uniformly discharged to the substrate S placed on the mounting table 5 via a plurality of discharge holes 15b, and the pressure in the processing container 1 is maintained at a predetermined level. In this state, high frequency power is applied from the high frequency power source 43 to the mounting table 5. Thereby, a high-frequency electric field is generated between the mounting table 5 as the lower electrode and the shower head 15 as the upper electrode, and the processing gas is dissociated and plasmaized. The substrate S is subjected to an etching treatment by this plasma. After the etching treatment is performed, the application of the high-frequency power from the high-frequency power source 43 is stopped, and after the gas introduction is stopped, the inside of the processing chamber 1 is decompressed to a predetermined pressure. Then, the gate valve 35 is opened, and the substrate S is transferred from the mounting table 5 to the fork member of the conveying device (not shown), and the substrate S is carried out from the substrate conveying opening 33 of the processing container 1. By the above operation, the plasma etching treatment of the substrate S is completed. By repeating such a plasma etching process, even if an etching product is adhered to the roughened portion 5 1 in the processing container 1, the roughened portion 51 having fine unevenness is difficult to planarize, so that it is possible to suppress the etching. The heat transfer efficiency and the conductive efficiency of the mounting table 5 to the substrate S fluctuate. Therefore, it is possible to prevent the processing such as etching spots from being uneven. Moreover, the substrate mounting table of the present invention can also have an electrostatic adsorption function. For example, the plasma etching apparatus 10 1 shown in Fig. 14 uses a mounting table 5C having an electrostatic adsorption function as a substrate mounting table. The other configuration of the plasma etching apparatus 101 shown in Fig. 14 is the same as that of the plasma etching apparatus 1 of Fig. 13. Therefore, the same components are denoted by the same reference numerals and the description thereof will be omitted. The mounting table 5 C of the substrate mounting table is a base material 65 made of a conductive material such as aluminum. This base material 65 corresponds to the base material 7 of the first and second embodiments. On the upper surface of the substrate 65, a first insulating layer 67, an electrode 69, and a second insulating layer 71 are laminated in this order. The second insulating layer 71 is the insulating film 8» corresponding to the substrate mounting tables 5A, 5B of the first and second embodiments, and the first insulating layer 67 and the second insulating layer are supplied from the DC power source 73 via the power feeding line 75. A direct current voltage is applied to the electrode 69 between the layers 71, and the substrate S can be electrostatically adsorbed, for example, by Coulomb force. On the upper surface of the second insulating layer 71, a substrate mounting surface 50 on which the adsorption holding substrate S is formed is formed. Though not shown, the substrate mounting surface 50 is provided with a roughened portion 51 having a surface roughness Ra of 2 μm or more and 6 μm or less, and a smooth portion 53 having a surface roughness Ra of less than 2 μm. The insulating member 60 and the lower base member 61 are formed with a gas passage 77 penetrating the same. A heat transfer gas such as He gas or the like can be supplied to the back surface of the substrate S via the gas passage 77. In other words, the mounting table 5C is a back heat radiating mechanism that supplies a heat transfer gas to the back surface of the substrate S and is cooled. The heat transfer gas supplied to the gas passage 77 is supplied to the gas supply passage hole 81 formed in the base material 65 after being diffused in the horizontal direction via the gas volume storage portion 79 formed at the boundary between the lower base material 61 and the base material 65. The surface of the mounting table 5C is ejected to the back side of the substrate S. As a result, the cold heat of the mounting table 5C is transmitted to the substrate s, and the substrate S is maintained at a predetermined temperature. Since the mounting table 5C of the present embodiment having the above-described configuration includes the electrostatic adsorption mechanism, the substrate S is strongly adsorbed on the substrate mounting surface 50, but a plurality of points are formed in the fine convex portion of the roughened portion 51. Contact the substrate s to support the -22-201145441 substrate S, which can disperse the stress. As a result, it is possible to prevent the back surface of the substrate S from being damaged. Further, even if the reaction product or fine particles generated by the etching adhere to the roughened portion 51, fine irregularities are present, so that it is difficult to form a flat surface. Further, since the smooth portion 53 can be in close contact with the back surface of the substrate S by the smooth surface thereof, a sealed space can be formed between the back surface of the substrate S and the roughened portion 51, and the heat transfer gas can be efficiently utilized. The heat is conveyed. Therefore, even if the etching process is repeated, the heat from the mounting table 5C to the substrate S can be made uniform in the surface of the substrate S, and the occurrence of etching spots can be prevented. Hereinabove, the embodiments of the present invention have been described in detail for illustrative purposes, but the present invention is not limited to the embodiments described above. It is also within the scope of the invention to make various modifications within the scope and spirit of the invention. For example, the present invention is not limited to a plasma processing apparatus which uses a substrate for FPD as a processing target, and can be applied to, for example, a plasma processing container which is processed by a semiconductor wafer. Further, the present invention is not limited to the plasma etching apparatus, and may be applied to, for example, a plasma processing apparatus that performs plasma processing such as plasma ashing treatment or plasma CVD treatment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a mounting table according to a first embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line II-II of Fig. 1; Fig. 3 is a cross-sectional view of an essential part showing a structure in the vicinity of the surface of the mounting table of Fig. 2 in an enlarged manner. 4 is a view for explaining a manufacturing process of the mounting table according to the first embodiment. Figure 5 is a diagram illustrating the construction continued from Figure 4. -23- 201145441 Fig. 6 is a cross-sectional view showing a mounting table according to a second embodiment of the present invention. Fig. 7 is a cross-sectional view of an essential part showing a structure in the vicinity of the surface of the mounting table of Fig. 6 in an enlarged manner. Fig. 8 is a view for explaining a manufacturing process of the mounting table of the twentieth embodiment; Fig. 9 is a view for explaining the construction continued from Fig. 8. Fig. 1 is a view showing a state of the roughened insulating film. Fig. 11 is a cross-sectional view of an essential part showing a structure in the vicinity of the surface of the stage after the roughening of the mounting table. Fig. 12 is a view showing the construction of the drawing subsequent to Fig. 1A. Fig. 13 is a schematic cross-sectional view showing an example of a plasma etching apparatus to which a substrate stage of the present invention is applied. Fig. 14 is a schematic cross-sectional view showing another example of a plasma etching apparatus to which a substrate stage of the present invention is applied. [Main component symbol description] 1 : Processing container 1 a : bottom wall Ibi, lb2 : side wall 1 c : cover 3 : sealing member 13 : insulating member 5 : mounting table 7 : substrate 8 : insulating film - 24 - 201145441 1 5 : shower head 15 a : gas diffusion space 15 b : gas discharge hole 17 : gas introduction port 1 9 : process gas supply pipe 21 : valve 2 3 : mass flow controller 2 5 : gas supply source 2 7 : exhaust Opening 29: Exhaust pipe 3 1 : Exhaust device 3 3 : Substrate transfer opening 3 5 : Gate valve 3 7 : Cylinder ring 3 9 : Feed wire 4 1 : Matching box (M. B. 43 : High-frequency power supply 4 5 : Power supply opening 5 〇 = Substrate mounting surface 5 1 : Roughing part 5 3 : Smoothing part 1 0 0, 1 0 1 : Plasma etching device S: Substrate - 25-