CN102148292B - 太阳能电池绒面的制备方法 - Google Patents
太阳能电池绒面的制备方法 Download PDFInfo
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- CN102148292B CN102148292B CN2011100680586A CN201110068058A CN102148292B CN 102148292 B CN102148292 B CN 102148292B CN 2011100680586 A CN2011100680586 A CN 2011100680586A CN 201110068058 A CN201110068058 A CN 201110068058A CN 102148292 B CN102148292 B CN 102148292B
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- solar cell
- grooves
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- silicon wafer
- mask
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims description 35
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 230000035484 reaction time Effects 0.000 claims description 8
- 238000003631 wet chemical etching Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims 2
- 238000002310 reflectometry Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 238000001039 wet etching Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 238000000233 ultraviolet lithography Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- HXCHRJMJMALFHP-UHFFFAOYSA-N azanium;ethanol;hydroxide Chemical compound N.O.CCO HXCHRJMJMALFHP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN2011100680586A CN102148292B (zh) | 2011-03-22 | 2011-03-22 | 太阳能电池绒面的制备方法 |
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CN2011100680586A CN102148292B (zh) | 2011-03-22 | 2011-03-22 | 太阳能电池绒面的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN102148292A CN102148292A (zh) | 2011-08-10 |
CN102148292B true CN102148292B (zh) | 2012-07-04 |
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CN2011100680586A Expired - Fee Related CN102148292B (zh) | 2011-03-22 | 2011-03-22 | 太阳能电池绒面的制备方法 |
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CN (1) | CN102148292B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023046070A1 (zh) | 2021-09-23 | 2023-03-30 | 天合光能股份有限公司 | 太阳能电池的绒面结构及其制备方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102412338B (zh) * | 2011-08-23 | 2014-05-07 | 江西瑞晶太阳能科技有限公司 | 多晶硅光学掩膜制绒工艺 |
CN102403375A (zh) * | 2011-11-01 | 2012-04-04 | 宁波市鑫友光伏有限公司 | 太阳能硅片绒面结构及其制绒方法 |
CN104576813B (zh) * | 2013-10-14 | 2017-10-13 | 中国科学院宁波材料技术与工程研究所 | 一种光电材料表面的纳米结构绒面及其制备方法 |
CN103681958B (zh) * | 2013-10-16 | 2017-05-17 | 常州时创能源科技有限公司 | 一种多晶硅片制绒方法 |
CN103985786A (zh) * | 2014-05-20 | 2014-08-13 | 新奥光伏能源有限公司 | 一种透明导电氧化物薄膜的制绒方法 |
CN107302033A (zh) * | 2017-06-20 | 2017-10-27 | 西安电子科技大学 | 一种表面陷光结构InGaN/GaN太阳电池 |
CN112993106B (zh) * | 2020-09-16 | 2022-07-22 | 重庆康佳光电技术研究院有限公司 | 蓝宝石基底图案化方法及蓝宝石基底 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101359701A (zh) * | 2008-09-19 | 2009-02-04 | 中国科学院电工研究所 | 一种基于纳米压印技术制备晶硅太阳电池局域背接触的方法 |
CN101475173A (zh) * | 2009-01-20 | 2009-07-08 | 吉林大学 | 一种制备超疏水抗反射微米和纳米复合结构表面的方法 |
CN101609870A (zh) * | 2008-06-18 | 2009-12-23 | 韩国科学技术院 | 有机太阳能电池和其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2009142787A2 (en) * | 2008-02-18 | 2009-11-26 | Board Of Regents, The University Of Texas System | Photovoltaic devices based on nanostructured polymer films molded from porous template |
US20100090341A1 (en) * | 2008-10-14 | 2010-04-15 | Molecular Imprints, Inc. | Nano-patterned active layers formed by nano-imprint lithography |
KR100986911B1 (ko) * | 2008-10-22 | 2010-10-08 | 고려대학교 산학협력단 | 태양전지의 반사방지막 제조 방법 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101609870A (zh) * | 2008-06-18 | 2009-12-23 | 韩国科学技术院 | 有机太阳能电池和其制造方法 |
CN101359701A (zh) * | 2008-09-19 | 2009-02-04 | 中国科学院电工研究所 | 一种基于纳米压印技术制备晶硅太阳电池局域背接触的方法 |
CN101475173A (zh) * | 2009-01-20 | 2009-07-08 | 吉林大学 | 一种制备超疏水抗反射微米和纳米复合结构表面的方法 |
Non-Patent Citations (1)
Title |
---|
罗康 等.《纳米压印技术进展及应用》.《电子工艺技术》.2009,第30卷(第5期),253-257. * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023046070A1 (zh) | 2021-09-23 | 2023-03-30 | 天合光能股份有限公司 | 太阳能电池的绒面结构及其制备方法 |
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CN102148292A (zh) | 2011-08-10 |
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