CN102142360A - Accelerating method for elimination of electrostatic adsorption of semiconductor-processed silicon wafer - Google Patents
Accelerating method for elimination of electrostatic adsorption of semiconductor-processed silicon wafer Download PDFInfo
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- CN102142360A CN102142360A CN2010105904362A CN201010590436A CN102142360A CN 102142360 A CN102142360 A CN 102142360A CN 2010105904362 A CN2010105904362 A CN 2010105904362A CN 201010590436 A CN201010590436 A CN 201010590436A CN 102142360 A CN102142360 A CN 102142360A
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Abstract
The invention relates to an accelerating method for the elimination of the electrostatic adsorption of a semiconductor-processed silicon wafer, which means that the elimination of the electrostatic adsorption of the semiconductor-processed silicon wafer can be accelerated by adopting a high voltage with medium audio frequency when metal aluminum serves as a connecting conductor in the processing of the semiconductor silicon wafer; preferably, the diameter of the silicon wafer is 300mm, the thickness of a ceramic disc below the silicon wafer is 1mm to 6mm, and the high voltage with the medium audio frequency is 0.6KV to 2.0KV; and the output power of a high-power plasma generator used by the semiconductor-processed silicon wafer is reduced gradually and quickly until the output power becomes zero. The accelerating method for the elimination of the electrostatic adsorption of the semiconductor-processed silicon wafer has unique and ingenious design; the elimination of the electrostatic adsorption of the semiconductor-processed silicon wafer can be accelerated obviously; and therefore the production efficiency is obviously improved, and the economic benefit is increased; moreover, the method has an important economic significance for a semiconductor processing enterprise, and is suitable for large-scale popularization and application.
Description
Technical field
The present invention relates to semiconductor machining silicon wafer processing technique field, particularly the semiconductor machining silicon wafer is eliminated the electrostatic adsorption technical field, specifically is a kind of method that the semiconductor machining silicon wafer is eliminated electrostatic adsorption of accelerating.
Background technology
The disk (chuck) of the centre support silicon wafer of high power plasma reaction chamber usually is bonded on the alloy pedestal that the liquid cools function arranged by the ceramic disks of about several millimeters thick in the semi-conductor industry equipment of reality.The overall evenness of ceramic disks requires very high, can reach ± 10～20 microns; Can have a unlimited Cao Gou above it at least.This unlimited Cao Gou has just become the passage of gas (argon gas commonly used) cooling silicon wafer function after silicon wafer covers, and is because use high power plasma to add in the semi-conductor industry equipment heated up rapidly in the surface of silicon wafer.Gas pressure in gas (argon gas) the refrigerating function passage roughly has 20～30 kilograms, the surface that just can guarantee silicon wafer obtains evenly and apace desuperheat, can effectively control silicon wafer top surface temperature be evenly distributed within 120 ℃, could guarantee diameter be the silicon wafer processing good evenness of 300mm in 1%, this is one of the most key measure that improves silicon wafer processed finished products rate.Here be specially refer to semiconductor wafers processing with metallic aluminium as bonding conductor.If but semiconductor wafers processing (has people once used iron than the higher metal of aluminium fusing point during as bonding conductor with copper or other, nickel, ferromagnetic metals such as manganese), the temperature of semiconductor wafers processing will be higher than 120 ℃ far away so, can reach 200 ℃, even more than 400 ℃.Semiconductor machining operation if any a kind of CVD can make the surface temperature of silicon wafer reach about 540 ℃.Ceramic disks be again a kind of very good insulator usually at normal temperatures resistance to earth can reach 10
11～10
12Ohm.The resistivity of ceramic disks is very responsive to temperature, and it will be inversely proportional to the form of index and the rising of temperature.At high temperature in order to keep electrostatic adsorption, make silicon wafer still can cover the groove that opens wide on the ceramic disks, can only improve high direct voltage 5000V to 7000V sometimes.Because ceramic disks subtracts under resistance to earth under such high temperature is rapid, its operating current will be from 100 μ A to 200 μ A surge to 800 μ A to 1000 μ A simultaneously.Certainly these are special case, not the semiconductor wafers processing that the present invention relates to metallic aluminium as the bonding conductor scope within.The silicon wafer that semiconductor machining is used also is a kind of good semi-conducting material, and the resistivity that has is between conductor and insulator.When silicon wafer move to by manipulator ceramic disks just above after second face of silicon wafer can induce immediately with ceramic disks on the anti-phase electrostatic charge of polarity; And first face of silicon wafer can induce immediately with ceramic disks on the electrostatic charge of polarity homophase; These two kinds of electrostatic charges are that polarity is anti-phase, but because amount of electrostatic charge is an equivalent, so silicon wafer is electroneutral.According to two anti-phase point charges of polarity on the physics electrostatic adsorption power is arranged: the size of active force be form direct ratio with taking advantage of of two anti-phase amount of electrostatic charge of polarity and with square being inversely proportional to of the distance of these two anti-phase point charge amounts.The thickness definitely that itself has owing to silicon wafer, so more much smaller than polarity homophase electrostatic charge distance of electrostatic charge on ceramic disks that first face at silicon wafer induces far away, so be active in this electrostatic adsorption in the anti-phase electrostatic charge of polarity that the following demifacet of silicon wafer induces.And this electrostatic adsorption power must just can be finished the operation of semiconductor machining silicon wafer greater than the gas pressure (20～30 kilograms) in gas (argon gas) the refrigerating function passage.And in case after finishing the operation of semiconductor machining silicon wafer, just need to eliminate electrostatic adsorption, so that take out silicon wafer easily, because when silicon wafer is removed the just top back of ceramic disks by manipulator, silicon wafer must be pushed up from ceramic disks (5～10mm) by the auxiliary body of manipulator, manipulator could insert the bottom of silicon wafer and silicon wafer is moved to next operation like this, that just needs to eliminate the electrostatic adsorption between silicon wafer and the ceramic disks, and not so silicon wafer will be by bursting.
Because semi-conductor industry to time of each parts in its industrial equipment weigh all be with second for haggling over unit, even in its Control Software with millisecond for haggling over unit.For example: semiconductor machining silicon wafer diameter is 300 millimeters (12 inches) routinely, is approximately 20 to 40 seconds if depend the time of eliminating electrostatic adsorption naturally alone.Based on of the requirement of modernized semi-conductor industry to its industrial equipment: the one, reliable; The 2nd, fast.Thereby improve the silicon wafer processing benefit of semiconductor machining industry, be with the words of its industry: (the silicon wafer number/hour); It is as the sign of weighing semi-conductor industry equipment fine quality.
Therefore, need a kind of method that the semiconductor machining silicon wafer is eliminated electrostatic adsorption of accelerating, it can significantly be accelerated the semiconductor machining silicon wafer and eliminate electrostatic adsorption, thus the production efficiency of significantly improving, increase economic benefit, have important economic implications for semiconductor machining enterprise.
Summary of the invention
The objective of the invention is to have overcome above-mentioned shortcoming of the prior art, a kind of method that the semiconductor machining silicon wafer is eliminated electrostatic adsorption of accelerating is provided, this method design is unique ingenious, can significantly accelerate the semiconductor machining silicon wafer and eliminate electrostatic adsorption, thereby the production efficiency of significantly improving, increase economic benefit, have important economic implications, be suitable for large-scale promotion application for semiconductor machining enterprise.
To achieve these goals, quickening semiconductor machining silicon wafer of the present invention is eliminated the method for electrostatic adsorption, is characterized in, adopts the sound intermediate frequency high pressure to accelerate the semiconductor machining silicon wafer and eliminates electrostatic adsorption.
Preferably, the diameter of described silicon wafer is 300mm, and the thickness of the ceramic disks below the described silicon wafer is 1 to 6mm, and described sound intermediate frequency high pressure is 0.6KV～2.0KV.
More preferably, described sound intermediate frequency high pressure is boosted by the sound intermediate frequency of 5KHz～10KHz and forms.
Preferably, the power output of the high power plasma generator that described semiconductor machining silicon wafer uses progressively reduces fast, until being zero.
More preferably, described power output is divided into 3～5 apace and is the step combination of the haggling over unit power output of successively decreasing by 10～50 milliseconds, until described power output be reduced to fast power output at full capacity 10% after, just be reduced to zero by this step.
Beneficial effect of the present invention is: the present invention adopts the sound intermediate frequency high pressure to accelerate the semiconductor machining silicon wafer and eliminates electrostatic adsorption, thus stop second face of silicon wafer can induce once more with ceramic disks on the anti-phase electrostatic charge of polarity; Second face of silicon wafer can induce with ceramic disks on the anti-phase sound intermediate frequency electric charge that does not possess electrostatic adsorption of polarity, can be controlled in 10 seconds, even 5 seconds, design is unique ingenious, can significantly accelerate the semiconductor machining silicon wafer and eliminate electrostatic adsorption, thereby the production efficiency of significantly improving increases economic benefit, have important economic implications for semiconductor machining enterprise, be suitable for large-scale promotion application.
Description of drawings
Fig. 1 is the schematic diagram that quickening semiconductor machining silicon wafer of the present invention is eliminated the method for electrostatic adsorption, and wherein 1 is silicon wafer, the 2nd, and ceramic disks, the 3rd, alloy pedestal, the 4th, radio frequency input, the 5th, liquid input, the 6th, argon gas input, the 7th, the input of sound intermediate frequency high pressure.
Fig. 2 is the schematic diagram that concerns of ceramic disks thickness (mm) and sound intermediate frequency high pressure (V) input.
Embodiment
The method that quickening semiconductor machining silicon wafer of the present invention is eliminated electrostatic adsorption is to adopt the sound intermediate frequency high pressure to accelerate the semiconductor machining silicon wafer to eliminate electrostatic adsorption.
Preferably, the diameter of described silicon wafer is 300mm, and the thickness of the ceramic disks below the described silicon wafer is 1 to 6mm, and described sound intermediate frequency high pressure is 1.5KV～2.0KV.
More preferably, described sound intermediate frequency high pressure is boosted by the sound intermediate frequency of 5KHz～10KHz and forms.
It is because the frequency spectrum of single or a plurality of radio frequency sources is roughly between the 2MHz to 200MHz among the injection plasma process chamber, modernized semiconductor processing equipment high-power RF source at 5KH to 10KHz roughly that the present invention adopts sound intermediate frequency, sound intermediate frequency roughly has only one of two percentages of 2MHz rf frequency minimum in this radio-frequency spectrum, can lower greatly that sound intermediate frequency and radio frequency interact and the possibility of the self-oscillation that causes among the plasma process chamber, this self-oscillation might will make discharge between the silicon wafer processed and the ceramic disks and impaired.Have many time that discharge is a micro discharge between the silicon wafer and ceramic disks, naked eyes all are difficult to resolution.Protected the safety of semiconductor processing equipment.The sound intermediate frequency high pressure roughly between 0.6KV to 2.0KV be for make the voltage number that has enough electrostatic adsorptions to remove to overcome the gas pressure in the refrigerating function passage between silicon wafer and the ceramic disks corresponding among original high direct voltage promptly is directly used in the plasma process chamber.
Preferably, the power output of the high power plasma generator that described semiconductor machining silicon wafer uses progressively reduces fast, until being zero.
More preferably, described power output is divided into 3～5 apace and is the step combination of the haggling over unit power output of successively decreasing by 10～50 milliseconds, until described power output be reduced to fast power output at full capacity 10% after, just be reduced to zero by this step.Generally need about 2 seconds; Be that the step of haggling over unit makes up the power output of successively decreasing, 5 * 50 milliseconds=250 milliseconds by 50 milliseconds for example by being divided into 5 apace.
The power output of this high power plasma generator (2～12 kilowatts) preferably avoids having only one to be a zero step from the full load power output to power output; As might damage the output power amplifier of high power plasma generator because this high power plasma generator is actually the radio-frequency power amplifier of 2～200MHz.The output stage of this high-power RF power amplifier output power (2～12 kilowatts) usually has tens 200～300 watts high-power FET to form by in parallel and tandem compound.Semiconductor junction in the field effect transistor is punctured by the anti-phase self induction electromotive force in the radio-frequency power amplifier passage very easily.
The sound intermediate frequency that is used for sound intermediate frequency generator of the present invention is roughly 5KHz to 10KHz; High pressure is roughly 0.6KV to 2.0KV, can directly add high direct voltage grouting socket place, Central Plains, plasma process chamber (the former disk (English name is chuck) that is used for the support silicon wafer that is connected on semiconductor machining and uses; The control interface that the control signal of the high pressure in the original system (ON/OFF) directly will be added the sound intermediate frequency high pressure that is connected on this method simultaneously gets final product (seeing also Fig. 1), F=α (Δ V) wherein, and F-electrostatic adsorption power is to be proportional to (Δ V)-potential difference.
It is because 5KHz to 10KHz is in the centre of audio frequency 300Hz to 20KHz that the audio frequency that is used for sound intermediate frequency generator of the present invention is roughly the reason that 5KHz to 10KHz and high pressure be roughly 0.6KV to 2.0KV, just can desirable sound intermediate frequency generator and the power amplifier of structure composition without any need for the electronic component of special permission; And 0.6KV to 2.0KV can be boosted 5KHz to 10KHz by audio frequency transformer and forms.Herein and do not require that the output of sound intermediate frequency generator and power amplifier all is standard sine wave.For the convenience of circuit design such as sinusoidal wave or even square wave can use.
In order more to be expressly understood technology contents of the present invention, describe in detail especially exemplified by following examples.
The silicon wafer diameter is 300 millimeters, ceramic disks thickness is 1 millimeter, in case after finishing the operation of semiconductor machining silicon wafer, (about 100 milliseconds) inject sound intermediate frequency high pressure 0.6KV immediately, its sound intermediate frequency by 5KHz is boosted and is formed, simultaneously, it is that the step of haggling over unit makes up the power output of successively decreasing by 50 milliseconds that the power output of the high power plasma generator that the semiconductor machining silicon wafer uses is divided into 5 apace, until power output be reduced to fast power output at full capacity 10% after, just be reduced to zero by this step, after 10 seconds, judge that with the sudden change of the vacuum degree of plasm reaction cavity vacuum silicon wafer eliminated electrostatic adsorption.
The silicon wafer diameter is 300 millimeters, ceramic disks thickness is 3 millimeters, in case after finishing the operation of semiconductor machining silicon wafer, (about 100 milliseconds) inject sound intermediate frequency high pressure 1.2KV immediately, its sound intermediate frequency by 7.5KHz is boosted and is formed, simultaneously, it is that the step of haggling over unit makes up the power output of successively decreasing by 50 milliseconds that the power output of the high power plasma generator that the semiconductor machining silicon wafer uses is divided into 5 apace, until power output be reduced to fast power output at full capacity 10% after, just be reduced to zero by this step, after 10 seconds, judge that with the sudden change of the vacuum degree of plasm reaction cavity vacuum silicon wafer eliminated electrostatic adsorption.
Silicon wafer thickness is 300 millimeters, ceramic disks thickness is 6 millimeters, in case after finishing the operation of semiconductor machining silicon wafer, (about 100 milliseconds) inject sound intermediate frequency high pressure 2.0KV immediately, its sound intermediate frequency by 10KHz is boosted and is formed, simultaneously, it is that the step of haggling over unit makes up the power output of successively decreasing by 50 milliseconds that the power output of the high power plasma generator that the semiconductor machining silicon wafer uses is divided into 5 apace, until power output be reduced to fast power output at full capacity 10% after, just be reduced to zero by this step, after 10 seconds, judge that with the sudden change of the vacuum degree of plasm reaction cavity vacuum silicon wafer eliminated electrostatic adsorption.
Need to prove 5 seconds needs the cooperation of a lot of factors just might reach, as the operating temperature and the vacuum degree of real plasm reaction cavity, and plasma power and density, pressure of refrigerating gas (argon gas) or the like.Can be regarded as in 5 seconds does not need silicon wafer thoroughly to eliminate electrostatic adsorption yet, as long as the greatly too electrostatic adsorption of the pressure of refrigerating gas (argon gas).Because the auxiliary body of manipulator just can with silicon wafer by ceramic disks (5～10mm) top from, manipulator could insert the bottom of silicon wafer and silicon wafer is moved to next operation like this, silicon wafer can be by bursting.5 seconds proximal pole limit values.
In case after finishing the operation of semiconductor machining silicon wafer, immediately (about 100 milliseconds) inject sound intermediate frequency be for second face that stops silicon wafer can induce once more with ceramic disks on the anti-phase electrostatic charge of polarity; Second face of silicon wafer can induce with ceramic disks on the anti-phase sound intermediate frequency electric charge that does not possess electrostatic adsorption of polarity.To need with being roughly 0.6KV to 2.0KV be according to the actual (real) thickness of the ceramic disks that several millimeters thick are arranged and fixed to the sound intermediate frequency high pressure herein; The sound intermediate frequency high pressure is roughly 0.6KV to 2.0KV and the motionless electrostatic charge of former delay in the ceramic disks of 1 to 6 millimeters thick can be stirred, thereby makes ceramic disks lose electrostatic adsorption (seeing also Fig. 2) immediately.Because silicon wafer and ceramic disks all are incompressible rigid bodies, original electrostatic adsorption is the deciding factor of gas leakage in the decision refrigerating function passage between them, generally between 10～30 millitorrs simultaneously.Indication with the plasm reaction cavity vacuum meter decides the high direct voltage voltage that needs exactly among the modernized semi-conductor industry industrial equipment of reality.By present just popular semiconductor machining silicon wafer diameter is that 300 millimeters (12 inches) use the sound intermediate frequency high pressure to be roughly 0.6KV to 2.0KV the method for reducing the silicon wafer electrostatic adsorption on the ceramic disks of 1 to 6 millimeters thick fast can be able to be controlled in 10 seconds, even 5 seconds.Have important economic implications so eliminate the method for electrostatic adsorption at the quickening semiconductor machining silicon wafer of this announcement, can be promoted energetically.
To sum up, the method design uniqueness that quickening semiconductor machining silicon wafer of the present invention is eliminated electrostatic adsorption is ingenious, can significantly accelerate the semiconductor machining silicon wafer and eliminate electrostatic adsorption, thereby the production efficiency of significantly improving, increase economic benefit, have important economic implications for semiconductor machining enterprise, be suitable for large-scale promotion application.
In this specification, the present invention is described with reference to its certain embodiments.But, still can make various modifications and conversion obviously and not deviate from the spirit and scope of the present invention.Therefore, specification and accompanying drawing are regarded in an illustrative, rather than a restrictive.
Claims (5)
1. accelerate the method that the semiconductor machining silicon wafer is eliminated electrostatic adsorption for one kind, it is characterized in that, adopt the sound intermediate frequency high pressure to accelerate the semiconductor machining silicon wafer and eliminate electrostatic adsorption.
2. quickening semiconductor machining silicon wafer according to claim 1 is eliminated the method for electrostatic adsorption, it is characterized in that, the diameter of described silicon wafer is 300mm, and the thickness of the ceramic disks below the described silicon wafer is 1 to 6mm, and described sound intermediate frequency high pressure is 0.6KV～2.0KV.
3. quickening semiconductor machining silicon wafer according to claim 2 is eliminated the method for electrostatic adsorption, it is characterized in that described sound intermediate frequency high pressure is boosted by the sound intermediate frequency of 5KHz～10KHz and forms.
4. quickening semiconductor machining silicon wafer according to claim 1 is eliminated the method for electrostatic adsorption, it is characterized in that, the power output of the high power plasma generator that described semiconductor machining silicon wafer uses progressively reduces fast, until being zero.
5. quickening semiconductor machining silicon wafer according to claim 4 is eliminated the method for electrostatic adsorption, it is characterized in that, it is that the step of haggling over unit makes up the power output of successively decreasing by 10～50 milliseconds that described power output is divided into 3～5 apace, until described power output be reduced to fast power output at full capacity 10% after, just be reduced to zero by this step.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010590436 CN102142360B (en) | 2010-12-15 | 2010-12-15 | Accelerating method for elimination of electrostatic adsorption of semiconductor-processed silicon wafer |
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| CN 201010590436 CN102142360B (en) | 2010-12-15 | 2010-12-15 | Accelerating method for elimination of electrostatic adsorption of semiconductor-processed silicon wafer |
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| CN102142360A true CN102142360A (en) | 2011-08-03 |
| CN102142360B CN102142360B (en) | 2013-10-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702598A (en) * | 2016-04-06 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and device for judging whether wafers are lifted normally or not |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325261A (en) * | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| US20040223286A1 (en) * | 2000-11-09 | 2004-11-11 | Samsung Electronics Co., Ltd. | Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage |
| US20080218931A1 (en) * | 2007-03-09 | 2008-09-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | System for decharging a wafer or substrate after dechucking from an electrostatic chuck |
| KR100899078B1 (en) * | 2008-07-31 | 2009-05-25 | 김준규 | Lam research tcp/rainbow series electro static chuck dechucking kit |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
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2010
- 2010-12-15 CN CN 201010590436 patent/CN102142360B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325261A (en) * | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| US20040223286A1 (en) * | 2000-11-09 | 2004-11-11 | Samsung Electronics Co., Ltd. | Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage |
| US20080218931A1 (en) * | 2007-03-09 | 2008-09-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | System for decharging a wafer or substrate after dechucking from an electrostatic chuck |
| KR100899078B1 (en) * | 2008-07-31 | 2009-05-25 | 김준규 | Lam research tcp/rainbow series electro static chuck dechucking kit |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702598A (en) * | 2016-04-06 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and device for judging whether wafers are lifted normally or not |
| CN105702598B (en) * | 2016-04-06 | 2018-09-18 | 北京北方华创微电子装备有限公司 | The method and its device whether chip normally rises judged |
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