CN102135727A - Method for overcoming pattern defects in ultra-low light transmittance dry etching process - Google Patents
Method for overcoming pattern defects in ultra-low light transmittance dry etching process Download PDFInfo
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- CN102135727A CN102135727A CN2010100273458A CN201010027345A CN102135727A CN 102135727 A CN102135727 A CN 102135727A CN 2010100273458 A CN2010100273458 A CN 2010100273458A CN 201010027345 A CN201010027345 A CN 201010027345A CN 102135727 A CN102135727 A CN 102135727A
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Abstract
The invention discloses a method for overcoming pattern defects in an ultra-low light transmittance dry etching process. The method comprises the following steps of: forming a film on a silicon substrate, coating photoresist on the film and opening a required pattern through photoetching; removing the film through dry etching by using the photoresist as a masking film so as to form the required pattern; after the dry etching is finished, baking the photoresist on the silicon substrate by using ultraviolet light or a high temperature; and finishing ion implantation by using the photoresist as the masking film. In the method, halides on the surface of the photoresist and in dry etching residues are decomposed in a mode that ultraviolet light baking or high-temperature baking is added after the dry etching, so that the integrity of a photoetching pattern is ensured, and the pattern defects which are directly or indirectly caused by halogen compounds generated by etching gas are overcome.
Description
Technical field
The present invention relates to the SIC (semiconductor integrated circuit) field, particularly relate to a kind of method of in ultralow transmittance dry etch process, improving graphic defects.
Background technology
In dry etching, halogen gas is used widely.The halogenic polymer that its etching afterreaction generates has water absorptivity and also knows altogether already.Because dried quarter of band glue and band glue inject and often realize by the Twi-lithography processing procedure in the traditional handicraft, and the reactive polymeric thing (polymer) that attaches to photoresist and etching patterned surface that is produced behind the dry etching can be by wet method or dry method, or after dry method adds technology such as wet method and remove, finish the definition of follow-up injection figure again by an other photoetching.Thereby can not influence subsequent technique by the caused graphic defects of halogenic polymer.But for directly being that mask is done the similar technology that ion injects behind the dry etching with the photoresist, because next the effect injected of ion will greatly depend on the integrality of photoresist figure after the etching, the halogenic polymer (as hydrogen bromide) that remains in photoresist surface and sidewall behind the dry etching must be removed, otherwise these similar polymkeric substance can absorb airborne steam and continuous expansion is gathered into spherical shape or cotton-shaped object is stayed the photoresist surface.And this defect condition can be more serious along with the decline of mask plate transmittance.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of improving graphic defects in ultralow transmittance dry etch process, improves by etching gas to generate the graphic defects that halogen compounds directly or indirectly causes.
For solving the problems of the technologies described above, the method for improving graphic defects in ultralow transmittance dry etch process of the present invention is to adopt following technical scheme to realize:
Step 1, on silicon substrate, form film, on described film, apply photoresist, open required figure by photoetching;
Step 2 utilizes photoresist as mask, removes described film by dry etching, forms required figure; Wherein, also comprise:
Step 3 after dry etching is finished, utilizes ultraviolet light or high temperature that the photoresist on the silicon substrate is toasted;
Step 4 is finished ion with photoresist as mask and is injected.
Adopt method of the present invention, owing to behind dry etching, increased the step of ultraviolet light baking or high-temperature baking, the halogenic polymer that is generated behind the dry etching is decomposed, volatilization, the graphic defects that has suppressed the halogenic polymer imbibition from the source and caused has guaranteed the reliability of technology that ion injects.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is a design sketch of not doing ultraviolet light baking or high-temperature baking behind the dry etching;
Fig. 2 is the design sketch that carries out ultraviolet light baking or high-temperature baking behind the dry etching;
Fig. 3-the 6th, method one embodiment process flow diagram of the present invention.
Embodiment
" ultralow transmittance " described in the present invention is meant that the ratio of the part that need be etched in the mask plate figure is less than 5% (clear data ratio＜5%).
At ultralow transmittance band glue dry etching, the technology that ion injects, greatest problem are in time to remove by the halogenic polymer that generates after the etching.Because halogenic polymer active higher, strong can be a little less than, utilize UV-irradiation or high-temperature baking can make its decomposition; Increase the management (UV-irradiation or high-temperature baking → ion injects) of Q-time so that guarantee the zero-fault of production run according to actual production environment and operation needs again.
Shown in Fig. 3-6, in an embodiment of the present invention, the described method of improving graphic defects in ultralow transmittance dry etch process realizes according to following technological process:
Step 1, in conjunction with shown in Figure 3, on silicon substrate, form film, this film can be an electrically conductive film, also can be semiconductor film; On described film, apply photoresist, open required figure by photoetching.
The film that described " conductor and semiconductor " general reference semi-conductor industry may be used in producing, Si (silicon) for example, Ge (germanium), Al (aluminium) etc.
Described " photoresist " comprises G-line, I-line, KrF, ArF and more the short wavelength be applied to produce the chemical photoactive substance of research and development.
Step 2 in conjunction with shown in Figure 4, utilizes photoresist as mask, removes described film by dry etching, forms required figure; Contain halogen or halogen compounds in the dry etching gas.
Step 3 in conjunction with shown in Figure 5, after normal dry etching is finished, utilizes ultraviolet light or high temperature that the photoresist on the silicon substrate is toasted, and halogenic polymer is decomposed volatilization.
Adopt the ultraviolet light baking still to adopt high-temperature baking to select according to the photoresist kind of using.For example I-line can toast with ultraviolet light, and KrF then needs the hot plate high-temperature baking.
Described " ultraviolet light baking or high-temperature baking " temperature is 150 ℃～250 ℃, and stoving time length is not limit.
Step 4 in conjunction with shown in Figure 6, finished ion with photoresist as mask and is injected.
Fig. 1 is a design sketch of not doing ultraviolet light baking or high-temperature baking behind the dry etching, the defective that exists polymkeric substance to form among Fig. 1.
Fig. 2 is the design sketch that carries out ultraviolet light baking or high-temperature baking behind the dry etching, because the halogenic polymer that is generated behind the dry etching is decomposed, volatilizees, has improved by etching gas generating the graphic defects that halogen compounds directly or indirectly causes.
More than by embodiment the present invention is had been described in detail, but these are not to be construed as limiting the invention.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (4)
1. a method of improving graphic defects in ultralow transmittance dry etch process comprises the steps:
Step 1, on silicon substrate, form film, on described film, apply photoresist, open required figure by photoetching;
Step 2 utilizes photoresist as mask, removes described film by dry etching, forms required figure; It is characterized in that, also comprise:
Step 3 after dry etching is finished, utilizes ultraviolet light or high temperature that the photoresist on the silicon substrate is toasted;
Step 4 is finished ion with photoresist as mask and is injected.
2. the method for claim 1, it is characterized in that: this film can be an electrically conductive film, also can be semiconductor film.
3. the method for claim 1, it is characterized in that: described " photoresist " comprises G-line, I-line, KrF, ArF and short wavelength's chemical photoactive substance more.
4. the method for claim 1 is characterized in that: described " ultraviolet light baking or high-temperature baking " temperature is 150 ℃～250 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100273458A CN102135727A (en) | 2010-01-21 | 2010-01-21 | Method for overcoming pattern defects in ultra-low light transmittance dry etching process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100273458A CN102135727A (en) | 2010-01-21 | 2010-01-21 | Method for overcoming pattern defects in ultra-low light transmittance dry etching process |
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| CN102135727A true CN102135727A (en) | 2011-07-27 |
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| CN2010100273458A Pending CN102135727A (en) | 2010-01-21 | 2010-01-21 | Method for overcoming pattern defects in ultra-low light transmittance dry etching process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187275A (en) * | 2011-12-28 | 2013-07-03 | 无锡华润上华科技有限公司 | method for manufacturing flash memory chip |
| CN104011596A (en) * | 2011-12-26 | 2014-08-27 | 东丽株式会社 | Photosensitive resin composition and method for producing semiconductor device |
| CN110379772A (en) * | 2019-07-24 | 2019-10-25 | 上海华力集成电路制造有限公司 | Improve the method that Sigma's trench etch process stability and germanium silicon epitaxial layer are formed |
-
2010
- 2010-01-21 CN CN2010100273458A patent/CN102135727A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104011596A (en) * | 2011-12-26 | 2014-08-27 | 东丽株式会社 | Photosensitive resin composition and method for producing semiconductor device |
| CN110095941A (en) * | 2011-12-26 | 2019-08-06 | 东丽株式会社 | The manufacturing method of photosensitive polymer combination and semiconductor element |
| CN110095941B (en) * | 2011-12-26 | 2023-02-17 | 东丽株式会社 | Photosensitive resin composition and method for producing semiconductor element |
| CN103187275A (en) * | 2011-12-28 | 2013-07-03 | 无锡华润上华科技有限公司 | method for manufacturing flash memory chip |
| CN103187275B (en) * | 2011-12-28 | 2015-12-02 | 无锡华润上华科技有限公司 | The manufacture method of flash chip |
| CN110379772A (en) * | 2019-07-24 | 2019-10-25 | 上海华力集成电路制造有限公司 | Improve the method that Sigma's trench etch process stability and germanium silicon epitaxial layer are formed |
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Application publication date: 20110727 |