CN102130214A - Wet-method etching monitoring method - Google Patents
Wet-method etching monitoring method Download PDFInfo
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- CN102130214A CN102130214A CN2010106206809A CN201010620680A CN102130214A CN 102130214 A CN102130214 A CN 102130214A CN 2010106206809 A CN2010106206809 A CN 2010106206809A CN 201010620680 A CN201010620680 A CN 201010620680A CN 102130214 A CN102130214 A CN 102130214A
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- mask regions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a wet-method etching monitoring method comprising the following steps of: firstly, preparing a non-mask region graph in a mask region on the surface of a silicon chip by adopting a printing or spraying method; secondly, etching a mask at the graph part of the non-mask region to form the non-mask region; and thirdly, measuring square resistance of the non-mask region by using four probes, wherein the resistivity of the square resistance of the non-mask region is 90-160 omega. According to the wet-method etching monitoring method, the non-mask region is dug from the mask region and etching process points are controlled by monitoring the square resistance of the non-mask region. The wet-method etching monitoring method can ensure that the reference is applied to the process control, and is convenient for control of the etching process.
Description
Technical field
The present invention relates to the technical field that high performance solar batteries is made, relate in particular to a kind of wet etching method for supervising.
Background technology
The development of solar cell is low-cost, high efficiency, and selective emitting electrode structure is the high efficiency method that realizes in the PN junction crystal silicon solar energy battery production technology.Adopt HF/HNO
3System solar cell PN junction is carried out etching form selective emitter, and etching is just right, goes back the effectively method for supervising of neither one at present.
Summary of the invention
The technical problem to be solved in the present invention is: for overcoming the problems referred to above, the invention provides a kind of wet etching method for supervising that can effectively control solar cell PN junction etching technics point.
The technical solution adopted for the present invention to solve the technical problems is: a kind of wet etching method for supervising is provided, comprises the steps:
The first step, with the printing or the spraying method prepare non-mask regions figure in the mask regions of silicon chip surface;
Second the step, the mask etching of non-mask regions visuals is formed non-mask regions;
The 3rd goes on foot, uses the square resistance of the non-mask regions of four point probe probe measurement, and the resistance of the square resistance of non-mask regions is 90～160 Ω.
Described non-mask regions is positioned at the gate electrode line position.
Distance between described four point probe probe edge and the non-mask regions of the homonymy edge is 15 times of spacing between adjacent two probes.
Spacing between adjacent two probes of described four point probe probe equates.
The invention has the beneficial effects as follows: utilization of the present invention is dug out the non-mask regions in certain zone in mask regions, monitors the square resistance of this non-mask regions and controls the etching technics point, and the present invention can make technology controlling and process that foundation is arranged, convenient control to etching process.
Description of drawings
The present invention is further described below in conjunction with accompanying drawing.
Fig. 1 is the process schematic representation of method of the present invention.
Fig. 2 is the process schematic representation of four point probe probe test square resistance among the present invention.
Wherein: 1. mask regions, 2. non-mask regions, 3. gate electrode line, 4. side's resistance tester, 5. probe.
Embodiment
In conjunction with the accompanying drawings, the present invention is further detailed explanation.These accompanying drawings are the schematic diagram of simplification, basic structure of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
Shown in Figure 2 as Fig. 1, a kind of wet etching method for supervising comprises the steps:
The first step, with the printing or the spraying method prepare non-mask regions figure in the mask regions 1 of silicon chip surface;
Second the step, the mask etching of non-mask regions visuals is formed non-mask regions 2;
The 3rd goes on foot, uses the square resistance of the non-mask regions 2 of four point probe probe measurement, and the resistance of the square resistance of non-mask regions 2 is 90～160 Ω.
Distance between four point probe probe edge and the non-mask regions of the homonymy edge is 15 times of spacing between adjacent two probes 5, therefore, can determine the size of required non-mask regions figure according to probe spacing.
As shown in Figure 1, the mask regions 1 that scribbles the solar battery sheet of resist is high resistance area, can't record its resistance with any instrument, have only gate electrode line 3 to be non-high resistance area, but, also can't actually record numerical value because the gate electrode line width is limited, excavate mask so select position, gate electrode line top, form non-mask regions 2, so just determined the position of required non-mask regions figure, survey the square resistance of non-mask regions 2 then with the four point probe probe.
As shown in Figure 1, routine selects 5 points to test, and non-mask regions 2 is 5 rectangles on gate electrode line.
As shown in Figure 2, the four point probe probe is made up of four probes 5, and distance equates between the probe 5, can reduce the ratio test error like this.Four probes 5 are by on the four lead-in wire side of being connected to resistance testers 4, be pressed in when probe 5 on the test material of non-mask regions, side's resistance tester 4 just can demonstrate the square resistance of material immediately, two probes 5 that concrete principle is the outer end produce current field, and the electromotive force that forms on the point is visited at these two in inner last two probes 5 measuring current fields.Because side's resistance is big more, the electromotive force of generation is also big more, therefore just can measure the square resistance of test material.Adopt the square resistance of the non-mask regions 2 of four point probe probe measurement, the resistance of the solar battery sheet of various different sizes is all in 90～160 Ω scopes.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and by above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must determine its technical scope according to the claim scope.
Claims (4)
1. a wet etching method for supervising is used for the wet etching degree of solar cell PN junction is monitored, and it is characterized in that: comprise the steps:
The first step, with the printing or the spraying method prepare non-mask regions figure in the mask regions of silicon chip surface;
Second the step, the mask etching of non-mask regions visuals is formed non-mask regions;
The 3rd goes on foot, uses the square resistance of the non-mask regions of four point probe probe measurement, and the resistance of the square resistance of non-mask regions is 90～160 Ω.
2. a kind of wet etching method for supervising according to claim 1 is characterized in that: described non-mask regions is positioned at the gate electrode line position.
3. a kind of wet etching method for supervising according to claim 1 is characterized in that: the distance between described four point probe probe edge and the non-mask regions of the homonymy edge is 15 times of spacing between adjacent two probes.
4. a kind of wet etching method for supervising according to claim 1 is characterized in that: the spacing between adjacent two probes of described four point probe probe equates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106206809A CN102130214A (en) | 2010-12-31 | 2010-12-31 | Wet-method etching monitoring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106206809A CN102130214A (en) | 2010-12-31 | 2010-12-31 | Wet-method etching monitoring method |
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| CN102130214A true CN102130214A (en) | 2011-07-20 |
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| CN2010106206809A Pending CN102130214A (en) | 2010-12-31 | 2010-12-31 | Wet-method etching monitoring method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354663A (en) * | 2011-11-08 | 2012-02-15 | 浚鑫科技股份有限公司 | Method for etching silicon chip |
| WO2013086920A1 (en) * | 2011-12-13 | 2013-06-20 | 无锡华润上华半导体有限公司 | Monitoring structure and monitoring method for silicon wet etching depth |
| CN103235185A (en) * | 2013-04-18 | 2013-08-07 | 常州天合光能有限公司 | Method for testing sheet resistance in preparation process of selective transmission electrode battery |
| CN111180361A (en) * | 2019-12-13 | 2020-05-19 | 贵州航天计量测试技术研究所 | Wet unsealing method for plastic package device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006042698A1 (en) * | 2004-10-14 | 2006-04-27 | Institut Für Solarenergieforschung Gmbh | Method for the contact separation of electrically-conducting layers on the back contacts of solar cells and corresponding solar cells |
| CN100570495C (en) * | 2007-04-06 | 2009-12-16 | 中芯国际集成电路制造(上海)有限公司 | Whether a kind of check etching liquid effective method |
| CN101878536A (en) * | 2008-11-04 | 2010-11-03 | Lg电子株式会社 | Silicon solar cell and method of manufacturing the same |
-
2010
- 2010-12-31 CN CN2010106206809A patent/CN102130214A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006042698A1 (en) * | 2004-10-14 | 2006-04-27 | Institut Für Solarenergieforschung Gmbh | Method for the contact separation of electrically-conducting layers on the back contacts of solar cells and corresponding solar cells |
| CN100570495C (en) * | 2007-04-06 | 2009-12-16 | 中芯国际集成电路制造(上海)有限公司 | Whether a kind of check etching liquid effective method |
| CN101878536A (en) * | 2008-11-04 | 2010-11-03 | Lg电子株式会社 | Silicon solar cell and method of manufacturing the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354663A (en) * | 2011-11-08 | 2012-02-15 | 浚鑫科技股份有限公司 | Method for etching silicon chip |
| WO2013086920A1 (en) * | 2011-12-13 | 2013-06-20 | 无锡华润上华半导体有限公司 | Monitoring structure and monitoring method for silicon wet etching depth |
| US9006867B2 (en) | 2011-12-13 | 2015-04-14 | Csmc Technologies Fabi Co., Ltd. | Monitoring structure and monitoring method for silicon wet etching depth |
| CN103235185A (en) * | 2013-04-18 | 2013-08-07 | 常州天合光能有限公司 | Method for testing sheet resistance in preparation process of selective transmission electrode battery |
| CN103235185B (en) * | 2013-04-18 | 2015-09-09 | 常州天合光能有限公司 | For the method for the test sheet resistance in selectivity emitting electrode cell manufacturing process |
| CN111180361A (en) * | 2019-12-13 | 2020-05-19 | 贵州航天计量测试技术研究所 | Wet unsealing method for plastic package device |
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Application publication date: 20110720 |