CN102130202A - Method and system for forming Cu-In-Ga-S-Se absorption layer and cadmium sulfide buffer layer in antivacuum way - Google Patents
Method and system for forming Cu-In-Ga-S-Se absorption layer and cadmium sulfide buffer layer in antivacuum way Download PDFInfo
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Abstract
The invention discloses a method and system for forming a Cu-In-Ga-S-Se absorption layer and a cadmium sulfide buffer layer in an antivacuum way. The method comprises the steps of: in specific to a substrate with a back electrode layer under antivacuum, forming a coating layer from mixed slurry on the back electrode layer, primarily drying, compacting the coating layer by using a compacting device, carrying out primary S-Se reaction treatment to form a primary Cu-In-Ga-S-Se layer, thermally treating to improve the lattice matching of the primary Cu-In-Ga-S-Se layer, carrying out miscellaneous-phase removal treatment by using potassium cyanide or bromides to remove miscellaneous-phase cuprous selenide and copper sulphide, carrying out post-stage S-Se reaction treatment to generate a needed post-stage Cu-In-Ga-S-Se absorption layer, and finally, forming a cadmium sulfide buffer layer on the Cu-In-Ga-S-Se absorption layer by using a chemical-tank water bath method.
Description
Technical field
The present invention relates to a kind of method and system that form copper indium gallium sulphur selenium absorbed layer and cadmium sulfide resilient coating, especially under non-vacuum environment, carry out two-stage sulphur selenium reaction to form superior in quality absorbed layer.
Background technology
Under the international agitation of green energy resource, the Copper Indium Gallium Selenide of tool quaternary compound (CIGS) solar cell in the thin film solar cell is because the advantage that is not subjected to the raw material restriction, can makes and have high conversion efficiency on the large tracts of land flexible base plate, especially the conversion efficiency of element cell (Cell) can reach 20% and the conversion efficiency of module also can reach 14%, therefore, be subjected to the attention of various countries' new forms of energy industrial circle gradually at present and endeavour exploitation.
Consult Fig. 1, be the schematic diagram of prior art Copper Indium Gallium Selenide solar cell.As shown in Figure 1, the Copper Indium Gallium Selenide solar cell comprises from bottom to top substrate 10, backplate layer 20, absorbed layer 30, resilient coating 40, transparency conducting layer 50 and the front electrode layer 60 of storehouse in regular turn, and wherein incident light L injects the Copper Indium Gallium Selenide solar cell from top to bottom.
Form p-n between the absorbed layer 30 of N type and the resilient coating 40 of P type and connect face 35, produce free electron electricity hole in order to absorb incident light right, further make backplate layer 20 be negative voltage for positive voltage front electrode layer 60, and mat positive contact 22 and negative contacts 62 connection external loadings, in order to output power.
The manufacture method of above-mentioned Copper Indium Gallium Selenide solar cell can adopt vacuum process or antivacuum processing procedure, wherein vacuum process mainly is to use sputtering method or vapour deposition method, though product quality is preferable, but stock utilization is lower, apparatus expensive and manufacturing cost height, but not vacuum process uses printing ink processing procedure (InkProcess), can significantly reduce manufacturing cost, has very much development potentiality, but the compactness of CuInGaSe absorbed layer is comparatively not enough, often cause the quaternary compound of Copper Indium Gallium Selenide to be difficult for forming larger particles, make that the crystal boundary (Grain boundary) in the absorbed layer is more relatively, can't successfully convert the light that drops in the crystal boundary to available electric energy, cause conversion efficiency to be difficult for promoting.
Therefore, need a kind ofly to improve the extinction efficient and the photoelectric conversion efficiency of CuInGaSe absorbed layer down and provide the good cadmium sulfide resilient coating of matching forming the method and system that preferable p-n connects face, and then solve above-mentioned prior art problems antivacuum.
Summary of the invention
Main purpose of the present invention is in the method that a kind of antivacuum formation copper indium gallium sulphur selenium absorbed layer and cadmium sulfide resilient coating are provided, it is antivacuum following to the substrate with backplate layer, form coating layer with mixed slurry on the electrode layer overleaf, after preliminary oven dry, the real close makeup of mat is put and is carried out closeization of reality, then carrying out elementary vulcanization reaction processing and elementary selenylation reaction handles, in order to form elementary copper indium gallium sulphur selenium layer, heat-treat again, to improve the lattice match of elementary copper indium gallium sulphur selenium layer, then utilize potassium cyanide or bromide to carry out dephasign and remove processing, in order to remove the Berzeline and the copper sulfide of dephasign, carry out back level vulcanization reaction processing and back level selenylation reaction processing again, produce required copper indium gallium sulphur selenium absorbed layer, utilize the chemical tank immersion method at last, and then on the copper indium gallium sulphur selenium absorbed layer, form the cadmium sulfide resilient coating, and this copper indium gallium sulphur selenium absorbed layer and cadmium sulfide resilient coating can be applicable to the Copper Indium Gallium Selenide solar cell, can improve the extinction efficient and the photoelectric conversion efficiency of absorbed layer, and the raising resilient coating is to the matching of absorbed layer, and then the high efficiency p-n of formation connects face between absorbed layer and resilient coating, uses the performance that reduces manufacturing cost and promote whole Copper Indium Gallium Selenide solar cell.
Another object of the present invention is in the system that a kind of antivacuum formation copper indium gallium sulphur selenium absorbed layer and cadmium sulfide resilient coating are provided, comprise mixing arrangement, coating layer forms device, drying unit, real close makeup is put, elementary sulphur selenium reaction unit, annealing device, the dephasign scavenge unit, back level sulphur selenium reaction unit and cadmium sulfide buffer growth device, use and carry out mixed processing respectively, coating layer forms to be handled, oven dry is handled, real closeization processing, elementary sulphur selenium reaction treatment, heat treatment, dephasign is removed and is handled, back level sulphur selenium reaction treatment and cadmium sulfide buffer growth are handled, and then on the metal molybdenum layer, form copper indium gallium sulphur selenium absorbed layer and cadmium sulfide resilient coating in regular turn, in order to make dynamical Copper Indium Gallium Selenide solar cell.
The present invention carries out the sulphur selenium reaction of two-stage to improve the quality of copper indium gallium sulphur selenium absorbed layer under non-vacuum environment, wherein the reaction of sulphur selenium comprises in regular turn vulcanization reaction and selenylation reaction, and before the elementary sulphur selenium reaction of phase I, earlier the copper indium gallium sulphur selenium slurry coating layer after the oven dry is carried out the processing of closeization of reality, and then the quantity of minimizing crystal boundary, to improve photoelectric conversion efficiency.
The present invention is between the back level sulphur selenium reaction of the elementary sulphur selenium reaction of phase I and second stage, carry out quick thermal annealing process and dephasign in regular turn and remove processing, wherein this quick thermal annealing process is in order to improve the crystal structure that elementary sulphur selenium reacts the elementary copper indium gallium sulphur selenium absorbed layer that is produced, use and alleviate or eliminate possible internal stress, improve lattice match, and dephasign is removed processing in order to get rid of dephasign Berzeline and the copper sulfide that meeting obstruction copper indium gallium sulphur selenium absorbed layer carries out opto-electronic conversion, makes opto-electronic conversion obtain further improvement.
Description of drawings
Fig. 1 is the schematic diagram of Copper Indium Gallium Selenide solar cell in the prior art.
Fig. 2 is the flow chart of the inventive method.
Fig. 3 is the schematic diagram of system of the present invention.
Embodiment
Those skilled in the art below cooperate Figure of description that embodiments of the present invention are done more detailed description, so that can implement after studying this specification carefully according to this.
Consult Fig. 2, the flow chart of the inventive method.As shown in Figure 2, method of the present invention is begun by step S10, under antivacuum, carry out mixed processing, comprise mixed copper indium gallium sulphur selenium powder, solvent and additive are to form the copper indium gallium sulphur selenium slurry, this copper indium gallium sulphur selenium powder can comprise copper and indium alloy (CuIn), copper indium gallium compound (CuInGa), copper indium diselenide (CuInSe), copper indium gallium selenide (CuInGaSe), copper sulfide indium (CuInS) and copper sulfide indium gallium (CuInGaS) powder at least one of them, this solvent can comprise alcohols and amine at least one of them, this additive can comprise dispersant, adhesive agent and levelling agent at least one of them.
Then enter step S20, carry out coating layer and form processing, utilize the copper indium gallium sulphur selenium slurry to form copper indium gallium sulphur selenium slurry coating layer on the electrode layer 20 overleaf, this coating layer forms handles one of them that comprises spray treatment, coating processing and immersion treatment, and this backplate layer 20 is positioned at the upper surface of substrate 10, and in step S30, dry processing, utilize heat temperature raising with the solvent in the pre-dry doubling removal copper indium gallium sulphur selenium slurry coating layer.
Then in step S40, again the copper indium gallium sulphur selenium slurry coating layer behind the removal solvent is carried out the processing of closeization of reality, can comprise the roll extrusion processing, one of them that pressing processing of high pressure hydrojet and high-pressure jet pressing are handled, use and exert pressure on this copper indium gallium sulphur selenium slurry coating layer, make real closeization of copper indium gallium sulphur selenium slurry coating layer, enter step S50 again and carry out elementary sulphur selenium reaction treatment, comprise vulcanization reaction and selenylation reaction, can feed hydrogen sulfide and hydrogen selenide respectively and can under heating up, make copper indium gallium sulphur selenium slurry coating layer produce sulfide and selenides, use forming elementary copper indium gallium sulphur selenium absorbed layer.
Then in step S60, heat-treat, in order to elementary copper indium gallium sulphur selenium absorbed layer is carried out crystallization treatment, this heat treatment can be quick thermal annealing process (Rapid Thermal Process, RTP), can comprise the crystallization treatment that is rapidly heated in regular turn, the multistage thermostatical crystallization is handled and the multistage cooling is handled, in order to improve the crystal structure of elementary copper indium gallium sulphur selenium absorbed layer, enter step S70 then, remove processing to carry out dephasign, comprise and utilize the dephasign scavenger to remove the compound of dephasign in the elementary copper indium gallium sulphur selenium absorbed layer, comprise Berzeline (Cu2Se) and copper sulfide (CuS) at least one of them, and this dephasign scavenger comprises Cymag (NaCN), potassium cyanide (KCN) and bromide at least one of them, and clean and dry.Then enter step S80, carry out back level sulphur selenium reaction treatment, be similar to the elementary sulphur selenium reaction treatment of step S50, comprise vulcanization reaction and selenylation reaction, make the further copper indium gallium sulphur selenium absorbed layer of level through vulcanization reaction and selenylation reaction and after forming of elementary copper indium gallium sulphur selenium absorbed layer, that is required copper indium gallium sulphur selenium absorbed layer.
At last in step S90, carrying out the cadmium sulfide buffer growth handles, substrate strikes off to be handled and the cleaning, drying processing, wherein the cadmium sulfide buffer growth is handled mat chemical tank immersion method (ChemicalBath Deposition, CBD), the copper indium gallium sulphur selenium absorbed layer that is produced among the step S80 is soaked in the aqueous solution that includes sulphur and cadmium, use and on the copper indium gallium sulphur selenium absorbed layer, form the cadmium sulfide resilient coating, wherein this aqueous solution comprises chlorate, ammoniacal liquor (NH3) and sulphur urine (SC (NH2) 2)), and this chlorate can comprise caddy (CdCl2), cadmium sulfate (CdSO4), cadmium iodide (CdI2) and oxalic acid cadmium (Cd (CH3COO) 2) at least one of them.Substrate strikes off and handles is that the edge and the back side of substrate are struck off, to remove unnecessary material.
The characteristics of the inventive method are, the sulphur selenium reaction of carrying out the two-stage under non-vacuum environment is to improve the quality of copper indium gallium sulphur selenium absorbed layer, wherein the reaction of sulphur selenium comprises in regular turn vulcanization reaction and selenylation reaction, and before the elementary sulphur selenium reaction of phase I, earlier the copper indium gallium sulphur selenium slurry coating layer after the oven dry is carried out the processing of closeization of reality, and then the quantity of minimizing crystal boundary, to improve photoelectric conversion efficiency.
Another characteristics of the inventive method are, between the back level sulphur selenium reaction of the elementary sulphur selenium reaction of phase I and second stage, carry out quick thermal annealing process and dephasign in regular turn and remove processing, wherein this quick thermal annealing process is in order to improve the crystal structure that elementary sulphur selenium reacts the elementary copper indium gallium sulphur selenium absorbed layer that is produced, use and alleviate or eliminate possible internal stress, improve lattice match, and dephasign is removed processing in order to get rid of dephasign Berzeline and the copper sulfide that meeting obstruction copper indium gallium sulphur selenium absorbed layer carries out opto-electronic conversion, makes opto-electronic conversion obtain further improvement.
Consult Fig. 3, be the schematic diagram of system of the present invention.As shown in Figure 3, system of the present invention comprises mixing arrangement 110, coating layer forms device 120, drying unit 130, real close makeup puts 140, elementary sulphur selenium reaction unit 150, annealing device 160, dephasign scavenge unit 170, back level sulphur selenium reaction unit 180 and cadmium sulfide buffer growth device 190, use and carry out mixed processing respectively, coating layer forms to be handled, oven dry is handled, real closeization processing, elementary sulphur selenium reaction treatment, heat treatment, dephasign is removed and is handled, back level sulphur selenium reaction treatment and cadmium sulfide buffer growth are handled, and then form copper indium gallium sulphur selenium absorbed layer and cadmium sulfide resilient coating on the metal molybdenum layer in regular turn.
Coating layer forms device 120 and can be in order to the spray equipment that carries out spray treatment, in order to the apparatus for coating that is coated with processing and in order to one of them of the infuser device that carries out immersion treatment.Spray equipment can comprise ultrasonic waves shower nozzle, ultrasonic waves controller and air pressure stream amount controller (not shown), evenly be sprayed into the backplate layer on the upper surface of substrate 10 in order to copper indium gallium sulphur selenium slurry with mixing channel 116, with formation copper indium gallium sulphur selenium slurry coating layer, and the lower surface of substrate 10 is supported and drives and advanced by a plurality of rollers 12.
In addition, apparatus for coating can comprise slurry extruder and scraper, and wherein the slurry extruder is extruded into the copper indium gallium sulphur selenium slurry on the backplate layer, and scraper is in order to remove unnecessary copper indium gallium sulphur selenium slurry, to reach desired thickness.Infuser device comprises soaking compartment and scraper, and soaking compartment is equipped with the copper indium gallium sulphur selenium slurry, after electrode layer soaked the copper indium gallium sulphur selenium slurry overleaf, removes unnecessary copper indium gallium sulphur selenium slurry with scraper again, to reach desired thickness.
Real close makeup put 140 can comprise in order to carry out rolling device that roll extrusion handles, in order to carry out high pressure hydrojet press fit device that the pressing of high pressure hydrojet handles and in order to carry out one of them of high-pressure jet press fit device that the high-pressure jet pressing handles.Fig. 3 is to be example with the rolling device, and the real close makeup of demonstration is put 140 and can be comprised at least one roller 142, in order to real this copper indium gallium sulphur selenium slurry coating layer of closeization.
In addition, high pressure hydrojet press fit device can comprise hydraulic compressor and nozzle, and hydraulic compressor is in order to improve the pressure of hydrojet, again through nozzle ejection to copper indium gallium sulphur selenium slurry coating layer, use and exert pressure, this hydrojet can be water.The high-pressure jet press fit device can comprise gas compressor and nozzle, and gas compressor is in order to improve jet pressure, again through nozzle ejection to copper indium gallium sulphur selenium slurry coating layer, use and exert pressure, this is jet to can be one of them of air, nitrogen and argon gas.
Elementary sulphur selenium reaction unit 150 can comprise elementary vulcanization reaction device and elementary selenylation reaction device (not shown), feed hydrogen sulfide and hydrogen selenide respectively and under heating up, copper indium gallium sulphur selenium slurry coating layer is carried out elementary vulcanization reaction processing and the processing of elementary selenylation reaction, use forming elementary copper indium gallium sulphur selenium absorbed layer.
Back level sulphur selenium reaction unit 180 is to be similar to elementary sulphur selenium reaction unit 150, can comprise back level vulcanization reaction device and back level selenylation reaction device (not shown), respectively elementary copper indium gallium sulphur selenium absorbed layer is carried out back level vulcanization reaction processing and back level selenylation reaction processing, with the copper indium gallium sulphur selenium absorbed layer of level after forming, that is required copper indium gallium sulphur selenium absorbed layer.
Cadmium sulfide buffer growth device 190 can comprise cadmium sulfide growth infuser device, substrate removing device and cleaning drying device (not shown), the ccontaining aqueous solution that includes sulphur and cadmium of cadmium sulfide growth infuser device wherein, when the copper indium gallium sulphur selenium absorbed layer of level is soaked in this aqueous solution after making, can on the copper indium gallium sulphur selenium absorbed layer of back level, grow the cadmium sulfide resilient coating, and scrape unnecessary material on the edge of substrate and the back side by the substrate removing device, and cleaning drying device is in order to clean and to dry this cadmium sulfide resilient coating.This aqueous solution comprises chlorate, ammoniacal liquor and sulphur urine, and this chlorate can comprise caddy, cadmium sulfate, cadmium iodide, and the oxalic acid cadmium at least one of them.
The characteristics of system of the present invention are, can operate under antivacuum atmospheric pressure environment, to form high-quality copper indium gallium sulphur selenium absorbed layer and cadmium sulfide resilient coating, use for the Copper Indium Gallium Selenide solar cell.
The above only is in order to explain preferred embodiment of the present invention; be not that attempt is done any pro forma restriction to the present invention according to this; therefore, all have in that identical creation spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (19)
1. the method for antivacuum formation copper indium gallium sulphur selenium absorbed layer and cadmium sulfide resilient coating, it is in an antivacuum copper indium gallium sulphur selenium absorbed layer and the cadmium sulfide resilient coating of forming in regular turn on the backplate layer on the substrate down, it is characterized in that this method comprises following sequential steps:
One mixed processing is mixed copper indium gallium sulphur selenium powder, solvent and additive, to form the copper indium gallium sulphur selenium slurry;
One coating layer forms processing, is that the copper indium gallium sulphur selenium slurry is coated on this backplate layer, and to form copper indium gallium sulphur selenium slurry coating layer, this coating layer forms handles one of them that comprises spray treatment, coating processing and immersion treatment;
One oven dry is handled, and is to utilize heat temperature raising to remove solvent in this copper indium gallium sulphur selenium slurry coating layer with pre-dry doubling;
One real closeization processing comprises one of them that roll extrusion processing, the pressing processing of high pressure hydrojet and high-pressure jet pressing are handled, uses and exerts pressure on this copper indium gallium sulphur selenium slurry coating layer, makes real closeization of this copper indium gallium sulphur selenium slurry coating layer;
One elementary sulphur selenium reaction treatment comprises vulcanization reaction and selenylation reaction, feeds hydrogen sulfide and hydrogen selenide respectively, and makes this copper indium gallium sulphur selenium slurry coating layer produce sulfide and selenides under heating up, and forms elementary copper indium gallium sulphur selenium absorbed layer;
One heat treatment is in order to carry out the crystallization treatment of elementary copper indium gallium sulphur selenium absorbed layer;
One dephasign remove to be handled, and utilizes the dephasign scavenger removing the compound of dephasign in this elementary copper indium gallium sulphur selenium absorbed layer, Berzeline and copper sulfide, and clean and dry;
One back grade sulphur selenium reaction treatment, be similar to this elementary sulphur selenium reaction treatment, comprise vulcanization reaction and selenylation reaction, make the further copper indium gallium sulphur selenium absorbed layer of level through vulcanization reaction and selenylation reaction and after forming of this elementary copper indium gallium sulphur selenium absorbed layer, that is this required copper indium gallium sulphur selenium absorbed layer; And
One cadmium sulfide buffer growth is handled, and is mat chemical tank immersion method, this copper indium gallium sulphur selenium absorbed layer is soaked in the aqueous solution that includes sulphur and cadmium, so that form this cadmium sulfide resilient coating on this copper indium gallium sulphur selenium absorbed layer.
2. the method for claim 1 is characterized in that, this copper indium gallium sulphur selenium powder comprise copper and indium alloy, copper indium gallium compound, copper indium diselenide, copper indium gallium selenide, copper sulfide indium and copper sulfide indium gallium powder at least one of them.
3. the method for claim 1 is characterized in that, this solvent comprise alcohols and amine at least one of them.
4. the method for claim 1 is characterized in that, this additive comprise dispersant, adhesive agent and levelling agent at least one of them.
5. the method for claim 1 is characterized in that, this heat treatment is quick thermal annealing process, the crystallization treatment that is rapidly heated that this crystallization treatment comprises, multistage thermostatical crystallization are handled and the multistage decrease temperature crystalline is handled at least one of them.
6. the method for claim 1 is characterized in that, the compound of this dephasign comprise Berzeline and copper sulfide at least one of them.
7. the method for claim 1 is characterized in that, this dephasign scavenger comprise Cymag, potassium cyanide and bromide at least one of them.
8. the method for claim 1 is characterized in that, this aqueous solution comprises chlorate, ammoniacal liquor and sulphur urine, and this chlorate comprise caddy, cadmium sulfate, cadmium iodide and oxalic acid cadmium at least one of them.
9. the method for claim 1 is characterized in that, this cadmium sulfide buffer growth processing further comprises strikes off the edge and the back side of this substrate, to remove unnecessary material.
10. the system of antivacuum formation copper indium gallium sulphur selenium absorbed layer and cadmium sulfide resilient coating, it is in an antivacuum copper indium gallium sulphur selenium absorbed layer and the cadmium sulfide resilient coating of forming in regular turn on the backplate layer on the substrate down, and the lower surface of this substrate is to be supported and drive and advanced by a plurality of rollers, it is characterized in that this system comprises:
One mixing arrangement, comprise at least one powder groove, at least one flux bath and mixing channel, use and carry out mixed processing, this at least one powder groove is in order to ccontaining a plurality of powders, described powder comprise copper and indium alloy, copper indium gallium compound, copper indium diselenide, copper indium gallium selenide, copper sulfide indium and copper sulfide indium gallium at least one of them, this at least one flux bath is in order to ccontaining solvent and additive, and this mixing channel in will this at least one powder groove described powder and the solvent of this at least one flux bath evenly mix with additive, produce the copper indium gallium sulphur selenium slurry;
One coating layer forms device, comprise in order to the spray equipment that carries out spray treatment, in order to the apparatus for coating that is coated with processing and in order to one of them of the infuser device that carries out immersion treatment, and then this copper indium gallium sulphur selenium slurry is formed copper indium gallium sulphur selenium slurry coating layer on this backplate layer;
One drying unit is in order to predry and remove solvent in this copper indium gallium sulphur selenium slurry coating layer;
One real close makeup is put, in order to real this copper indium gallium sulphur selenium slurry coating layer of closeization, the close makeup of this reality put comprise in order to carry out rolling device that roll extrusion handles, in order to carry out high pressure hydrojet press fit device that the pressing of high pressure hydrojet handles and in order to one of them of the high-pressure jet press fit device that carries out high-pressure jet pressing processing;
One elementary sulphur selenium reaction unit, comprise elementary vulcanization reaction device and elementary selenylation reaction device, feed hydrogen sulfide and hydrogen selenide respectively and under heating up, this copper indium gallium sulphur selenium slurry coating layer is carried out elementary vulcanization reaction processing and the processing of elementary selenylation reaction, use forming elementary copper indium gallium sulphur selenium absorbed layer;
One annealing device is in order to carry out the crystallization treatment of elementary copper indium gallium sulphur selenium absorbed layer;
One dephasign scavenge unit, comprise etching bath and cleaning drying device, the ccontaining etching solution of this etching bath, to remove the compound of dephasign in this elementary copper indium gallium sulphur selenium absorbed layer, this cleaning drying device is in order to clean and to dry this elementary copper indium gallium sulphur selenium absorbed layer;
One back grade sulphur selenium reaction unit, be similar to this elementary sulphur selenium reaction unit, comprise back level vulcanization reaction device and back level selenylation reaction device, respectively this elementary copper indium gallium sulphur selenium absorbed layer is carried out back level vulcanization reaction processing and back level selenylation reaction processing, with the copper indium gallium sulphur selenium absorbed layer of level after forming, that is this required copper indium gallium sulphur selenium absorbed layer; And
One cadmium sulfide buffer growth device, comprise cadmium sulfide growth infuser device, substrate removing device and cleaning drying device, the ccontaining aqueous solution that includes sulphur and cadmium of this cadmium sulfide growth infuser device, when making the copper indium gallium sulphur selenium absorbed layer of this back level be soaked in this aqueous solution, can on the copper indium gallium sulphur selenium absorbed layer of this back level, grow the cadmium sulfide resilient coating, this substrate removing device is in order to unnecessary material on the edge that scrapes this substrate and the back side, and this cleaning drying device is in order to clean and to dry this cadmium sulfide resilient coating.
11. system as claimed in claim 10 is characterized in that, this solvent comprise alcohols and amine at least one of them.
12. system as claimed in claim 10 is characterized in that, this additive can comprise dispersant, adhesive agent and levelling agent at least one of them.
13. system as claimed in claim 10 is characterized in that, this spray equipment comprises ultrasonic waves shower nozzle, ultrasonic waves controller and air pressure stream amount controller, and this apparatus for coating comprises slurry extruder and scraper, and this infuser device comprises soaking compartment and scraper.
14. system as claimed in claim 10 is characterized in that, this drying unit comprise heater strip, high frequency radiation source and infrared source at least one of them.
15. system as claimed in claim 10, it is characterized in that, this rolling device comprises at least one roller, this high pressure hydrojet press fit device comprises the hydraulic compressor of the pressure that improves hydrojet and hydrojet is injected into nozzle on the copper indium gallium sulphur selenium slurry coating layer, this hydrojet is a water, this high-pressure jet press fit device comprises the gas compressor that improves jet pressure and with the jet nozzle that is injected on the copper indium gallium sulphur selenium slurry coating layer, and this is jet to be one of them of air, nitrogen and argon gas.
16. system as claimed in claim 10 is characterized in that, this heat treatment is quick thermal annealing process, the crystallization treatment that is rapidly heated that this crystallization treatment comprises, multistage thermostatical crystallization are handled and the multistage decrease temperature crystalline is handled at least one of them.
17. system as claimed in claim 10 is characterized in that, this etching solution comprise Cymag, potassium cyanide and bromide at least one of them.
18. system as claimed in claim 10 is characterized in that, the compound of this dephasign comprise Berzeline and copper sulfide at least one of them.
19. system as claimed in claim 10 is characterized in that, this aqueous solution comprises chlorate, ammoniacal liquor and sulphur urine, and this chlorate comprise caddy, cadmium sulfate, cadmium iodide and oxalic acid cadmium at least one of them.
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| CN102694068A (en) * | 2012-05-23 | 2012-09-26 | 中南大学 | Method for surface modification of copper indium gallium diselenide (Cu(In, Ga)Se2) film |
| CN103022261A (en) * | 2012-12-28 | 2013-04-03 | 英利能源（中国）有限公司 | Method and system for producing solar cells |
| CN103318851A (en) * | 2013-05-24 | 2013-09-25 | 深圳市亚太兴实业有限公司 | Copper-indium-gallium-sulfur-selenium solar cell, film absorbing layer and preparation method thereof |
| CN103628043A (en) * | 2012-08-24 | 2014-03-12 | 北儒精密股份有限公司 | Selenylation method for solar battery and selenylation device thereof |
| CN103633182A (en) * | 2013-11-27 | 2014-03-12 | 中国科学院上海硅酸盐研究所 | Cu-Im-Ga-S-Se-sensitized semiconductor anode solar cell and preparation method thereof |
| WO2015096689A1 (en) * | 2013-12-23 | 2015-07-02 | Bengbu Design & Research Institute For Glass Industry | Layer System for Thin-Film Solar Cells |
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