TWI396295B - Preparation method of non - vacuum wet copper indium gallium selenium solar cells - Google Patents

Preparation method of non - vacuum wet copper indium gallium selenium solar cells Download PDF

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TWI396295B
TWI396295B TW098143625A TW98143625A TWI396295B TW I396295 B TWI396295 B TW I396295B TW 098143625 A TW098143625 A TW 098143625A TW 98143625 A TW98143625 A TW 98143625A TW I396295 B TWI396295 B TW I396295B
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treatment
device
layer
layer forming
copper indium
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TW098143625A
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TW201123506A (en
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Lung Chuang Chuan
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Jenn Feng New Energy Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Description

Non-vacuum wet copper indium gallium selenide solar cell manufacturing method

The present invention relates to a method of forming a copper indium gallium selenide solar cell, particularly in a wet manner under non-vacuum.

Since copper indium gallium selenide (CIGS) solar cells have high conversion efficiencies, such as up to 20% for cell cells and 14% for modules, they are particularly valued in many solar cells, especially without upstream raw materials. limits.

In the conventional technology, a method for manufacturing a copper indium gallium selenide solar cell can be generally classified into a vacuum process and a non-vacuum process. In the vacuum process, the sputtering method or the evaporation method is mainly used, but the vacuum process requires relatively expensive processing equipment and the material utilization rate is also low, thereby making the overall manufacturing cost high. For the non-vacuum process, the printing method or the electrodeposition method is usually used. However, since the mass production technology of the large-area solar cell is still immature and belongs to the laboratory development stage, there is still no commercial product of a large area on the market.

Therefore, there is a need for a highly integrated non-vacuum process, in particular, a first transparent conductive oxide layer, a copper indium gallium selenide layer and a cadmium sulfide layer, a zinc oxide layer and a second transparent conductive layer can be sequentially formed on the back electrode layer. The oxide layer, in turn, produces a CIGS solar cell with high conversion rate, high quality, high reliability, and low manufacturing cost.

The main object of the present invention is to provide a non-vacuum wet copper indium gallium selenide solar cell manufacturing method for manufacturing a copper indium gallium selenide solar cell, which is formed in a wet manner on a back electrode layer in a non-vacuum manner. a transparent conductive oxidation (TCO) layer, a copper indium gallium selenide layer and a cadmium sulfide layer, a zinc oxide layer and a second transparent conductive oxide (TCO) layer, thereby forming a high conversion rate copper indium gallium selenide (CIGS) solar cell, wherein The back electrode layer is disposed on the substrate, and the non-vacuum wet copper indium gallium selenide process comprises a first TCO layer forming process, a copper indium gallium selenide layer and a cadmium sulfide layer forming process, a zinc oxide layer forming process, and a second TCO. a layer forming process, wherein the first TCO layer forming process, the zinc oxide layer forming process, and the second TCO layer forming process respectively comprise a cutting process, and sequentially performing laser and blade cutting processing on the workpiece to form a segmented secondary working piece, In order to improve the integration of the process and the overall optoelectronic quality of copper indium gallium selenide (CIGS) solar cells.

The first TCO layer forming process includes a mixing process, a coating layer forming process, a baking process, a densification process, a heat treatment, and a dicing process, thereby forming a first TCO layer having a uniform thickness and a preferable crystal structure on the back electrode layer.

The formation process of the copper indium gallium selenide layer and the cadmium sulfide layer comprises sequentially forming a copper indium gallium selenide layer and a cadmium sulfide layer on the first slurry coating layer generated by the first TCO layer forming process, wherein the copper layer serving as the absorption layer The indium gallium selenide layer is formed by a mixing treatment, a coating layer forming treatment, a drying treatment, a solidification treatment, a primary sulfur selenium reaction treatment, a heat treatment, a heterogeneous phase removal treatment, and a post-stage sulfur selenium reaction treatment, and is used as a buffer layer. The cadmium sulfide layer is formed by a chemical bath deposition (CBD).

The zinc oxide layer forming treatment includes forming a zinc oxide layer on the cadmium sulfide layer by a mixing treatment, a coating layer forming treatment, a drying treatment, a densification treatment, a heat treatment, and a dicing treatment.

The second TCO layer forming process is similar to the first TCO layer forming process described above, including a mixing process, a coating layer forming process, a drying process, a densification process, a heat treatment, and a dicing process, thereby forming a first layer on the zinc oxide layer. Two TCO layers.

The embodiments of the present invention will be described in more detail below with reference to the drawings and the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

Referring to the first figure, a schematic diagram of a method for fabricating a non-vacuum wet copper indium gallium selenide solar cell of the present invention. As shown in the first figure, the non-vacuum wet copper indium gallium selenide solar cell manufacturing method of the present invention starts from step S10, and in a wet manner, by a first TCO layer forming device under non-vacuum, is placed on the substrate. The back electrode layer performs a first transparent conductive oxidation (TCO) layer forming process to form a first TCO layer and drives the substrate to move forward. Next, in step S20, a copper indium gallium selenide layer and a zinc sulfide layer forming device are used to form a copper indium gallium selenide layer and a zinc sulfide layer, and a copper indium stacked in this order from bottom to top is formed on the first TCO layer. a gallium selenide layer and a cadmium sulfide layer, in step S30, a zinc oxide layer forming device is used to form a zinc oxide layer forming treatment to form a zinc oxide layer on the cadmium sulfide layer, and finally, the process proceeds to step S40, and the second TCO layer forming device is used. Performing a second TCO layer forming process to form a second TCO layer on the zinc oxide layer, thereby completing a substrate having a bottom-up sequence, a back electrode layer, a first TCO layer, a copper indium gallium selenide layer, a cadmium sulfide layer, and A copper indium gallium selenide solar cell of a second TCO layer.

Referring to the second figure, a schematic diagram of the first TCO layer formation process of the method of the present invention. As shown in the second figure, the first TCO layer forming process in step S10 is started in step S11, and the mixing device is used to perform a mixing process to uniformly mix at least one powder with at least one solvent into a first TCO layer slurry, wherein The at least one powder may include at least one of indium tin oxide (ITO), tin oxide (SnO 2 ), indium titanium oxide (ITiO), and aluminum zinc oxide (AZO), and the at least one solvent may include an alcohol or an amine. At least one of a dispersant, an adhesive, and a leveling agent.

Next, proceeding to step S12, the coating layer forming apparatus is used to perform the coating layer forming treatment, and the first TCO layer slurry of the step S11 is formed on the back electrode layer to form the first TCO layer slurry coating layer. Then, a drying process is performed using a drying device in step S13 to pre-dry and remove the solvent in the first TCO layer slurry coating layer.

Next, in step S14, the dried first TCO layer slurry coating layer is subjected to a densification treatment by a densification device, and a pressure is applied to the first TCO layer slurry coating layer by a solid densification device. The first TCO layer slurry coating layer is densified. The first TCO layer slurry coating layer is subjected to heat treatment, such as rapid thermal annealing treatment (RTP), in step S15 by using a heat treatment device to improve the crystal structure of the first TCO layer slurry coating layer and form a first TCO layer. . Finally, a dicing process is performed using a dicing apparatus in step S16 to form a segmented workpiece including a substrate, a back electrode layer, and a first TCO layer.

Referring to the third figure, a schematic diagram of a first TCO layer forming apparatus of the method of the present invention. As shown in the third figure, the first TCO layer forming device includes a mixing device 11, a coating layer forming device 12, a drying device 13, a solidifying device 14, a heat treatment device 15, and a cutting device 16, for respectively performing the second In the drawing, the mixing treatment, the coating layer forming treatment, the drying treatment, the densification treatment, the heat treatment, and the dicing treatment, the first TCO layer is formed on the back electrode layer on the substrate 10, and the substrate 10 is composed of plural The rollers 18 are supported and driven forward.

The mixing device 11 includes a powder tank 11A, a solvent tank 11B, and a mixing tank 11C. The powder tank 11A houses at least one powder, the solvent tank 11B houses at least one solvent, and the mixing tank 11C can be an ink mixing tank for The at least one powder of the powder tank 11A and the at least one solvent of the solvent tank 11B are uniformly mixed to form a first TCO layer slurry.

The coating layer forming device 12 may include one of a spraying device for performing a spray coating process, a coating device for performing a coating process, and an infusion device for performing a soaking process. This embodiment is an exemplary embodiment of a spray coating apparatus to illustrate the features of the present invention. In the third figure, the spraying device 12 may include an ultrasonic nozzle, an ultrasonic controller, and a pneumatic flow controller (not shown), and the first TCO layer slurry may be uniformly sprayed onto the back electrode layer by ultrasonic waves. A first TCO layer slurry coating layer is formed. The drying device 13 is a heating device and may include at least one of a heating wire, an infrared source, and a radiation source, and the radiation source may include a microwave radiation source.

The solidification device 14 may include a rolling device for performing a rolling process, a high pressure spray hydraulic device for performing a high pressure spray hydraulic pressure process, and a high pressure jet press device for performing a high pressure jet press treatment. One. This embodiment is an exemplary embodiment of a rolling device for illustrating the features of the present invention. The rolling device 14 may include a plurality of rollers pressed on the first TCO layer slurry coating layer, and sequentially apply mild pressure, moderate pressure, and the like in the light pressure section, the medium pressure section, and the heavy pressure section, respectively. The pressure is severe to gradually solidify the first TCO layer slurry coating layer.

The heat treatment device 15 includes a sequential rapid temperature crystallization treatment, a multi-stage constant temperature crystallization treatment, and a multi-stage cooling treatment on the first TCO layer slurry coating layer by using the heating device and the cooling device to improve the crystal structure and form the first TCO layer. . The cutting device 16 includes a laser and a doctor blade for performing a cutting process.

Referring to the fourth figure, a schematic diagram of the formation process of the copper indium gallium selenide layer and the cadmium sulfide layer of the method of the present invention. As shown in the fourth figure, the copper indium gallium selenide layer and the cadmium sulfide layer forming process in step S20 includes the sequential mixing process of step S21, the coating layer forming process of step S22, the drying process of step S23, and the step S24 of step S24. The densification treatment, the primary sulfur selenium reaction treatment in step S25, the heat treatment in step S26, the impurity phase removal treatment in step S27, the subsequent sulfur selenium reaction treatment in step S28, and the cadmium sulfide layer growth treatment in step S29 are performed using copper indium. A gallium selenide layer and a cadmium sulfide layer are formed, and a copper indium gallium selenide layer and a cadmium sulfide layer are formed on the first TCO layer.

Step S21, step S22, step S23 and step S24 are similar to step S11, step S12, step S13 and step S14 of the second figure, the difference is that step S21 uses a mixing device to form a copper indium gallium selenide layer slurry. At least one powder used includes CuIn, CuInGa, CuInSe, CuInGaSe, CuInS and CuSS. At least one of (CuInGaS) powder, the coating layer forming process of step S22 may form a copper indium gallium selenide layer slurry coating layer on the first TCO layer, and the drying process of step S23 utilizes a drying device to copper The solvent in the indium gallium selenide layer slurry coating layer is pre-dried and removed, and the solidification treatment in step S24 is performed by using a rolling device to solidify the dried copper indium gallium selenide layer slurry coating layer.

In step S25, the primary sulfur selenium reaction treatment includes a primary sulfurization reaction and a primary selenization reaction system using a primary sulfur selenium reaction device to cause a copper indium gallium selenide sulfur slurry coating layer to generate sulfides and selenides, thereby forming primary copper. Indium gallium selenide layer. The rapid thermal annealing process of step S26 is similar to step S15 of the second figure, using a rapid thermal annealing device to improve the crystal structure of the primary copper indium gallium selenide layer. In step S27, the impurity phase removal process utilizes a heterophase removal device to remove the compound of the impurity phase in the primary copper indium gallium selenide layer, and to perform cleaning and drying. In step S28, the subsequent sulfur-selenium reaction treatment is similar to the primary sulfur-selenium reaction treatment, and the subsequent copper-indium gallium selenide layer is subjected to further post-sulfurization reaction and post-stage selenization reaction by using a post-stage sulfur selenium reaction device. A copper indium gallium selenide layer of the latter stage, that is, a desired copper indium gallium selenide layer, is formed.

In step S29, the cadmium sulfide layer growth treatment uses a cadmium sulfide layer growth device to form a cadmium sulfide layer on the copper indium gallium selenide layer of the step S28 by a chemical bath deposition (CBD), that is, a cadmium sulfide buffer. And the step S29 further includes a substrate scraping process and a cleaning and drying process to scrape the excess material of the substrate separately, and to clean and dry the cadmium sulfide buffer layer.

Referring to the fifth figure, a schematic diagram of a copper indium gallium selenide layer and a zinc sulfide layer forming apparatus of the method of the present invention. As shown in the fifth figure, the device for forming a copper indium gallium selenide layer and a zinc sulfide layer comprises a mixing device 21, a coating layer forming device 22, a drying device 23, a solidification device 24, a primary sulfur selenium reaction device 25, and a heat treatment device. 26, a heterogeneous phase removing device 27, a post-stage sulfur selenium reaction device 28 and a cadmium sulfide layer growing device 29, wherein the mixing device 21, the coating layer forming device 22, the drying device 23, the solidifying device 24, and the heat treating device 26 respectively Similar to the mixing device 11, the coating layer forming device 12, the drying device 13, the solidifying device 14, and the heat treatment device 15, which are similar to the third embodiment, the mixing device 21 includes a powder tank 21A, a solvent tank 21B, and a mixing tank 21C. The coating layer forming device 22 includes an ultrasonic jet head, an ultrasonic controller, and a pneumatic flow controller (not shown).

The primary sulfur-selenium reaction device 25 sequentially introduces hydrogen sulfide and hydrogen selenide, respectively, and performs primary sulfurization reaction and primary selenization reaction at elevated temperature. The heterogeneous removal device 27 includes a heterogeneous scavenger to scavenge the heterophasic compound, including at least one of cuprous selenide (Cu 2 Se) and copper sulfide (CuS), the heterogeneous scavenger comprising sodium cyanide (NaCN) At least one of potassium cyanide (KCN) and bromide. The latter sulfur-selenium reaction device 28 is similar to the primary sulfur-selenium reaction device 25, and sequentially passes hydrogen sulfide and hydrogen selenide, and performs post-sulfurization reaction and post-stage selenization reaction at elevated temperature.

The cadmium sulfide layer growth device 29 includes an aqueous solution containing sulfur and cadmium, so that a copper indium gallium selenide layer is immersed in the aqueous solution, and a cadmium sulfide layer is formed on the copper indium gallium selenide layer, and the aqueous solution includes a chloride salt, an ammonia water, and a sulfur In the urine, the chloride salt may include at least one of cadmium chloride, cadmium sulfate, cadmium iodide, and cadmium diacetate.

Referring to the sixth drawing, a schematic diagram of the zinc oxide layer forming treatment of the method of the present invention. As shown in the sixth figure, the zinc oxide layer forming treatment of the method of the present invention is similar to the step S10 of the second drawing, using the zinc oxide layer forming apparatus to carry out the sequential mixing treatment of the step S31, and the coating layer of the step S32. The forming process, the drying process of step S33, the densification process of step S34, the heat treatment of step S35, and the dicing process of step S36 are different in that the at least one powder includes zinc oxide powder, and step S31 is oxidized. The zinc powder is mixed with a solvent including at least one of an alcohol, an amine, a dispersant, an adhesive, and a leveling agent to form a zinc oxide slurry, and the zinc oxide slurry is deposited on the cadmium sulfide layer by the step S32. The zinc oxide coating layer is formed, followed by the drying treatment in step S33 and the densification treatment in step S34. Step S35 is further heat treated to improve the crystal structure of the zinc oxide coating layer to form a zinc oxide layer, and finally the segment is cut in step S36.

Referring to the seventh figure, a schematic diagram of a zinc oxide layer forming apparatus of the method of the present invention. As shown in the seventh figure, the zinc oxide layer forming device is similar to the first TCO layer forming device of the third figure, and includes a mixing device 31, a coating layer forming device 32, a drying device 33, a solidifying device 34, and a heat treatment. The device 35 and the cutting device 36 are respectively configured to perform the mixing process, the coating layer forming process, the drying process, the densification process, the heat treatment and the cutting process in the sixth figure, and form a zinc oxide layer on the cadmium sulfide layer. Further, the mixing device 31 includes a powder tank 31A, a solvent tank 31B, and a mixing tank 31C, the difference being that the powder tank 31A accommodates zinc oxide powder.

Further, the second TCO layer forming process of step S40 is the same as the first TCO layer forming process of step S10, and the second TCO zinc layer forming device is used to perform the sequential mixing process, the coating layer forming process, and the drying process. a solidification treatment, a heat treatment, and a dicing treatment to form a second TCO layer on the zinc oxide layer, and the second TCO zinc layer formation device has the same structure as the first TCO zinc layer formation device in the third embodiment. Do not repeat them.

Therefore, the above method of the present invention can complete the first TCO layer, the copper indium gallium selenide layer and the cadmium sulfide layer, the zinc oxide layer and the second TCO layer which are sequentially stacked on the back electrode layer of the substrate. battery.

The invention is characterized in that the first TCO layer forming process, the copper indium gallium selenide layer and the cadmium sulfide layer forming process, the zinc oxide layer forming process and the second TCO layer forming process are integrated, and the method is performed in a wet manner under non-vacuum. A first TCO layer, a copper indium gallium selenide layer and a cadmium sulfide layer, a zinc oxide layer and a second TCO layer are sequentially formed on the back electrode layer to form a high conversion rate copper indium gallium selenide (CIGS) solar cell, which is suitable for large quantities. Production and production, while reducing production costs, and simplify the production process to improve product yield.

The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the present invention in any way, and any modifications or alterations to the present invention made in the spirit of the same invention. All should still be included in the scope of the intention of the present invention.

10. . . Substrate

11. . . Mixing device

11A. . . Powder slot

11B. . . Solvent tank

11C. . . Mixing tank

12. . . Coating layer forming device

13. . . Drying device

14. . . Solidification device

15. . . Heat treatment device

16. . . Cutting device

18. . . Wheel

twenty one. . . Mixing device

21A. . . Powder slot

21B. . . Solvent tank

21C. . . Mixing tank

twenty two. . . Coating layer forming device

twenty three. . . Drying device

twenty four. . . Solidification device

25. . . Primary sulfur selenium reaction unit

26. . . Heat treatment device

27. . . Miscellaneous phase cleaning device

28. . . Subsequent sulfur-selenium reaction device

29. . . Cadmium sulfide layer growth device

31. . . Mixing device

31A. . . Powder slot

31B. . . Solvent tank

31C. . . Mixing tank

32. . . Coating layer forming device

33. . . Drying device

34. . . Solidification device

35. . . Heat treatment device

36. . . Cutting device

S10. . . First transparent conductive oxide layer forming process

S11. . . Mixed processing

S12. . . Coating layer formation treatment

S13. . . Drying treatment

S14. . . Solidification

S15. . . Heat treatment

S16. . . Cutting treatment

S20. . . Formation process of copper indium gallium selenide layer and cadmium sulfide layer

S21. . . Mixed processing

S22. . . Coating layer formation treatment

S23. . . Drying treatment

S24. . . Solidification

S25. . . Primary sulfur selenium reaction treatment

S26. . . Heat treatment

S27. . . Miscellaneous phase removal

S28. . . Subsequent sulfur and selenium reaction treatment

S29. . . Cadmium sulfide layer growth treatment

S30. . . Zinc oxide layer formation treatment

S31. . . Mixed processing

S32. . . Coating layer formation treatment

S33. . . Drying treatment

S34. . . Solidification

S35. . . Heat treatment

S36. . . Cutting process

S40. . . Second transparent conductive oxide layer forming process

The first figure is a schematic diagram of a method for fabricating a non-vacuum wet copper indium gallium selenide solar cell of the present invention.

The second figure is a schematic diagram of the first TCO layer formation process of the method of the present invention.

The third figure is a schematic illustration of a first TCO layer forming apparatus of the method of the present invention.

The fourth figure is a schematic diagram of the formation process of the copper indium gallium selenide layer and the zinc sulfide layer of the method of the present invention.

The fifth figure is a schematic view of a device for forming a copper indium gallium selenide layer and a zinc sulfide layer according to the method of the present invention.

Figure 6 is a schematic illustration of the zinc oxide layer formation process of the method of the present invention.

Figure 7 is a schematic illustration of a zinc oxide layer forming apparatus of the method of the present invention.

S10. . . First transparent conductive oxide layer forming process

S20. . . Formation process of copper indium gallium selenide layer and cadmium sulfide layer

S30. . . Zinc oxide layer formation treatment

S40. . . Second transparent conductive oxide layer forming process

Claims (16)

  1. Non-vacuum wet copper indium gallium selenide solar cell manufacturing method for manufacturing first transparent conductive oxide layer, copper indium gallium selenide layer and cadmium sulfide layer of copper indium gallium selenide solar cell in a wet manner under non-vacuum a zinc layer and a second transparent conductive oxide layer, the method comprising the steps of: performing a first transparent conductive oxide layer forming process on the substrate having the back electrode layer by using the first transparent conductive oxide layer forming device, The back electrode layer is located on the substrate, and the bottom of the substrate is supported by a plurality of rollers and is driven forward. The first transparent conductive oxide layer forming process includes a mixing process, a coating layer forming process, a drying process, and a solidification process. And heat-treating and cutting, further forming the first transparent conductive oxide layer on the back electrode layer; forming a copper indium gallium selenide layer and a cadmium sulfide layer by using a copper indium gallium selenide layer and a cadmium sulfide layer forming device, including mixing Treatment, coating layer formation treatment, drying treatment, solidification treatment, primary sulfur selenium reaction treatment, heat treatment, impurity phase removal treatment, post-stage sulfur selenium reaction treatment a cadmium sulfide layer growth treatment, in which a copper indium gallium selenide layer and a cadmium sulfide layer are sequentially formed on the first transparent conductive oxide layer; and a zinc oxide layer forming device is used to perform a zinc oxide layer forming treatment, including a mixing treatment and a coating layer Forming treatment, drying treatment, solidification treatment, heat treatment and cutting treatment, further forming a zinc oxide layer on the cadmium sulfide layer; and performing a second transparent conductive oxide layer formation treatment by using the second transparent conductive oxide layer forming device, A mixing treatment, a coating layer forming treatment, a drying treatment, a densification treatment, a heat treatment, and a cutting treatment are included to form a second transparent conductive oxide layer on the zinc oxide layer.
  2. The method of claim 1, wherein the first transparent conductive oxide layer forming device comprises a mixing device, a coating layer forming device, a drying device, a solidification device, a heat treatment device, and a cutting device, respectively Mixing treatment, coating layer forming treatment, drying treatment, solidification treatment, heat treatment, and cutting treatment.
  3. According to the method of claim 1, wherein the copper indium gallium selenide layer and the cadmium sulfide layer forming device comprise a mixing device, a coating layer forming device, a drying device, a solidification device, a primary sulfur selenium reaction device, The heat treatment device, the impurity phase cleaning device, the post-stage sulfur selenium reaction device and the cadmium sulfide layer growth device are respectively subjected to mixing treatment, coating layer formation treatment, drying treatment, solidification treatment, primary sulfur selenium reaction treatment, heat treatment, Hybrid phase removal treatment, post-stage sulfur selenium reaction treatment and cadmium sulfide layer growth treatment.
  4. The method according to claim 1, wherein the zinc oxide layer forming device comprises a mixing device, a coating layer forming device, a drying device, a solidification device, a heat treatment device, and a cutting device, for separately performing mixing treatment, Coating layer forming treatment, drying treatment, solidification treatment, heat treatment, and cutting treatment.
  5. The method of claim 1, wherein the second transparent conductive oxide layer forming device comprises a mixing device, a coating layer forming device, a drying device, a densification device, a heat treatment device, and a cutting device, thereby being transparent The conductive oxide powder and at least one solvent are subjected to a mixing treatment, a coating layer forming treatment, a drying treatment, a densification treatment, a heat treatment, and a cutting treatment.
  6. The method according to any one of the preceding claims, wherein the mixing device comprises a powder tank, a solvent tank and a mixing tank, the powder tank is for accommodating at least one powder, The solvent tank is configured to accommodate at least one solvent, and the mixing tank uniformly mixes the at least one powder and the at least one solvent.
  7. The method according to any one of claims 2 to 5, wherein the coating layer forming device comprises a spraying device for performing a spraying process, a coating device for performing a coating process, and One of the soaking devices for performing the soaking treatment, and the spraying device includes an ultrasonic nozzle, an ultrasonic controller, and a pneumatic flow controller.
  8. The method according to any one of the preceding claims, wherein the drying device is a heating device comprising at least one of a heating wire, an infrared source and a radiation source, the radiation source comprising microwave radiation source.
  9. The method according to any one of claims 2 to 5, wherein the solidification device comprises a rolling device for performing a rolling process, and a high pressure spray for performing a high pressure spray hydraulic treatment. a hydraulic combination device and one of a high pressure jet compression device for performing high pressure jet compression treatment, and the rolling device includes a plurality of rollers for sequentially applying mild pressure, medium pressure and heavy pressure, thereby Gradually reach densification.
  10. The method according to any one of claims 2 to 5, wherein the heat treatment device comprises a heating device and a cooling device for performing sequential rapid temperature crystallization treatment, multi-stage constant temperature crystallization treatment, and multi-stage cooling treatment. .
  11. The method of any of claims 2, 4, and 5, wherein the cutting device comprises a laser and a doctor blade.
  12. According to the method of claim 6, wherein the at least one powder contained in the powder tank of the first transparent conductive oxide layer forming device comprises indium tin oxide, tin oxide, indium titanium oxide and aluminum zinc oxide. At least one of the at least one powder of the copper indium gallium selenide layer and the cadmium sulfide layer forming device includes a copper indium alloy, a copper indium gallium compound, copper indium selenide, and copper indium selenide. At least one of gallium, copper indium sulfide, and copper indium gallium sulfide powder, the at least one powder contained in the powder tank of the zinc oxide layer forming device includes zinc oxide powder, and the second transparent conductive oxide layer The at least one powder contained in the powder tank of the forming device includes at least one of indium tin oxide, tin oxide, indium titanium oxide and aluminum zinc oxide, the first transparent conductive oxide layer forming device, the copper indium gallium The at least one solvent contained in the selenium layer and the cadmium sulfide layer forming device, the zinc oxide layer forming device, and the solvent tank of the second transparent conductive oxide layer forming device may include alcohols, amines, dispersants, adhesives, and At least one of the leveling agents.
  13. According to the method of claim 3, the primary sulfur selenium reaction device sequentially passes hydrogen sulfide and hydrogen selenide, respectively, and performs primary sulfurization reaction and primary selenization reaction at elevated temperature.
  14. The method of claim 3, wherein the impurity phase scavenging device comprises a heterogeneous scavenger to scavenge at least one of the heterogeneous compound, including cuprous selenide and copper sulfide, the heterogeneous scavenger comprising At least one of sodium cyanide, potassium cyanide and bromide.
  15. According to the method of claim 3, wherein the subsequent sulfur-selenium reaction device sequentially passes hydrogen sulfide and hydrogen selenide, respectively, and performs a post-sulfidation reaction and a primary selenization reaction at a temperature rise.
  16. According to the method of claim 3, wherein the cadmium sulfide layer growth device comprises an aqueous solution containing sulfur and cadmium, the copper indium gallium selenide layer is immersed in the aqueous solution, and formed on the copper indium gallium selenide layer. a cadmium sulfide layer, and the aqueous solution includes a chloride salt, ammonia water, and thiourea, and the chloride salt may include at least one of cadmium chloride, cadmium sulfate, cadmium iodide, and cadmium diacetate.
TW098143625A 2009-12-18 2009-12-18 Preparation method of non - vacuum wet copper indium gallium selenium solar cells TWI396295B (en)

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Publication number Priority date Publication date Assignee Title
TW200414551A (en) * 2002-09-30 2004-08-01 Raycom Technologies Inc Manufacturing apparatus and method for large-scale production of thin-film solar cells
TW200729525A (en) * 2005-09-06 2007-08-01 Lg Chemical Ltd Process for preparation of absorption layer of solar cell
TW200926431A (en) * 2007-12-06 2009-06-16 Chung Shan Inst Of Science The structure of absorbing layer of solar cell and its manufacturing method
TW200937644A (en) * 2007-12-06 2009-09-01 Ibm Improved photovoltaic device with solution-processed chalcogenide absorber layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200414551A (en) * 2002-09-30 2004-08-01 Raycom Technologies Inc Manufacturing apparatus and method for large-scale production of thin-film solar cells
TW200729525A (en) * 2005-09-06 2007-08-01 Lg Chemical Ltd Process for preparation of absorption layer of solar cell
TW200926431A (en) * 2007-12-06 2009-06-16 Chung Shan Inst Of Science The structure of absorbing layer of solar cell and its manufacturing method
TW200937644A (en) * 2007-12-06 2009-09-01 Ibm Improved photovoltaic device with solution-processed chalcogenide absorber layer

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