CN102130083B - Array-type fine-pitch connector - Google Patents
Array-type fine-pitch connector Download PDFInfo
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- CN102130083B CN102130083B CN 201010004692 CN201010004692A CN102130083B CN 102130083 B CN102130083 B CN 102130083B CN 201010004692 CN201010004692 CN 201010004692 CN 201010004692 A CN201010004692 A CN 201010004692A CN 102130083 B CN102130083 B CN 102130083B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention discloses an array-type fine-pitch connector provided with self-coplanarity and a normal force detection mechanism, which is made by a micro electrical mechanical making process. Lower and stable contact resistance can be provided by the connector under the action of a normal force due to utilization of favorable mechanical and conductive properties of carbon nanotubes, and the transmission quality of an electric signal is increased.
Description
Technical field
The present invention relates to a kind of array connector, and particularly relate to a kind of thin space array connector.
Background technology
General array connector receives relevant limit such as mould and manufacture craft; Minimum terminal pitch can only reach 0.8mm; More because the plastic cement body of array connector;, plastic cement is prone to produce the phenomenon of warpage when penetrating, along with array connector feet position increases, with the coplane degree of wayward each pin interdigit.Along with increase and pitch smaller the external IO connecting pin of bga chip position, cause with the coplane degree of traditional optical measuring chip tin ball more difficult in addition.
In addition, along with the development of connector thin spaceization, the positive force that single terminal can provide also can reduce, and causes excessive contact resistance, influences the transmission quality of signal widely.
In the application of reality, if can improve the body construction of array connector, make the array connector of microminiaturization under lower positive force effect, also can keep low and stable contact resistance, can promote the array connector and be electrically connected characteristic.In addition, if can utilize the array connector coplane degree of measuring chip tin ball simultaneously, more can significantly increase its industrial utilization.
Summary of the invention
The object of the present invention is to provide the thin space array type connector of a kind of tool oneself's coplane degree and positive force testing mechanism.This array type connector utilizes the favorable mechanical and the conductive characteristic of CNT, can be under low positive force effect, and provide contact-making surface little and stable contact resistance.
For reaching above-mentioned purpose; The present invention provides a kind of thin space array type connector of tool oneself coplane degree, because connector body by the silicon wafer manufacturing, therefore can provide more tough body construction rigidity; Can not cause the behavior of body warpage, the reliability when influencing the connector use.
The present invention provides a kind of thin space array type connector array type, through micro electronmechanical manufacture craft mode, makes the low and stable contact resistance array type connector of tool CNT structure.
The present invention proposes a kind of connector construction, comprises the semiconductor-based end at least, and it comprises ring bodies structure and the column structure that is positioned at these ring bodies structure central authorities at least, and at least one cantilever design, links to each other with this column structure of these ring bodies structure central authorities.
Said according to a preferred embodiment of the present invention; Above-mentioned connector construction comprise the ring bodies structure with the column structure that is positioned at this ring bodies structure central authorities, be positioned at a plurality of first block structures on this ring bodies structure, be positioned at second block structure, at least one cantilever design on this column structure, be positioned at a plurality of solder projections on those first block structures, and be positioned at the CNT layer on this second block structure.Wherein, This cantilever design links to each other with this first block structure of this second block structure and at least one; And this cantilever design and this first block structure connecting place more comprise a piezoelectric material layer or a pressure drag material layer; Through this piezoelectric material layer or pressure drag material layer, but the displacement of sensing cantilever design, and then the coplane degree of measuring chip tin ball.
Said according to a preferred embodiment of the present invention, this ring bodies structure and this column structure are laminated construction in above-mentioned connector construction, comprise the silicon oxide layer that is positioned at upper surface of substrate of semiconductor.
Said according to a preferred embodiment of the present invention; This first, second block structure and this cantilever design are laminated construction in above-mentioned connector construction, comprise a polysilicon layer, be positioned at the Seed Layer on this polysilicon layer and be positioned at the metal level on this Seed Layer.
Said according to a preferred embodiment of the present invention, the piezoelectric material layer in above-mentioned connector construction is between this polysilicon layer and this Seed Layer.
Said according to a preferred embodiment of the present invention, the pressure drag material layer in above-mentioned connector construction is that a doped region is positioned among this polysilicon layer.
Said according to preferred embodiment of the present invention, in the above-mentioned connector construction, the material of this piezoelectric material layer comprises zinc oxide.
Said according to preferred embodiment of the present invention, in the above-mentioned connector construction, the material of this pressure drag material layer comprises boron or germanium.
Said according to preferred embodiment of the present invention, in the above-mentioned connector construction, the material of this metal level comprises aluminium, copper or gold.
Said according to preferred embodiment of the present invention, in the above-mentioned connector construction, the material of this Seed Layer comprises titanium, gold or chromium.
Said according to preferred embodiment of the present invention, in the above-mentioned connector construction, the material of this solder projection comprises tin, sn-ag alloy or leypewter.
Utilize piezoelectricity or pressure drag sensing mechanism to come measured chip tin ball coplane degree or suffered positive force because connector construction proposed by the invention is design, can promote the scope that product is used.
The contact-making surface of microconnector structure provided by the present invention more possesses the CNT layer, can reduce contact resistance.Microconnector structure provided by the present invention is particularly suitable for being arranged in the structure that little contact of thin space (less than 500 microns) is electrically connected.
In addition, the manufacturing approach of connector construction of the present invention can be integrated in the existing micro electronmechanical manufacture craft easily carries out, and therefore can not increase extra cost.
For let above-mentioned and other purposes of the present invention, feature and advantage can be more obviously understandable, hereinafter is special lifts preferred embodiment, and cooperates appended accompanying drawing, elaborates as follows.
Description of drawings
Figure 1A～Fig. 1 H is the manufacturing flow diagram of the array connector of one embodiment of the invention;
Fig. 2 A is the schematic perspective view of the array connector of one embodiment of the invention;
Fig. 2 B is that the part of Fig. 2 A is amplified schematic perspective view;
Fig. 2 C is the generalized section of Fig. 2 B along hatching I-I ';
Fig. 3 is the part manufacturing process profile of the connector of another embodiment of the present invention;
Fig. 4 is the generalized section of the connector of another embodiment of the present invention.
The main element symbol description
20: connector
100,200,300,400: substrate
100a: upper surface
100b: lower surface
102,202,302,402: silicon oxide layer
104,204,304,404: polysilicon layer
106,206: piezoelectric material layer
306,406: doped region
108a, 108b, 208a, 408a: Seed Layer
110a, 110b, 210a, 410a: metal level
112: plant layer
120: solder projection
125: hard mask (hard cover screen) layer
130,230,430: the CNT layer
200a: ring bodies structure
200b: column structure
240a, 240b, 440a, 440b: block structure
240c, 440c: cantilever design
Embodiment
Figure 1A-Figure 1B & Fig. 1 F-Fig. 1 H illustrate is the manufacturing process profile of the array connector of one embodiment of the invention, and Fig. 1 C-Fig. 1 E illustrate is the manufacturing process top view of the array connector of one embodiment of the invention.
Please with reference to Figure 1A, a substrate 100 is provided at first, this substrate 100 for example is semiconductor silicon wafer or chip, at first on the upper surface 100a of this substrate 100, utilizes the for example thermal oxidation mode one silica layer 102 of growing up.For example then utilize Low Pressure Chemical Vapor Deposition (LPCVD) deposits a polysilicon layer 104 on this silicon oxide layer 102.Follow and on this polysilicon layer 104, form the thin films of piezoelectric material layer 106 of a patterning.Wherein the material of piezoelectric material layer 106 for example is zinc oxide (ZnO).
With reference to Figure 1B, utilize vapor deposition one Seed Layer 108a and the 108b respectively on the upper surface 100a of this substrate 100 and lower surface 100b of electron gun vacuum evaporation mode for example.This seed layer materials for example is chromium/gold (Cr/Au) or titanium/gold (Ti/Au).Then, on this Seed Layer 108a/108b, carry out follow-up plating manufacture craft, electroplate respectively at substrate 100 positive and negative and form a metal level 110a/110b.This metal level 110a/110b material for example is aluminium, copper or gold.
With reference to Fig. 1 C, utilize the photoetching etching step, the metal level 110a (Figure 1B) in patterned substrate 100 fronts is to form contact mat 110c and lead 110d.
With reference to Fig. 1 D, utilize the photoetching etching step to define the figure of scolding tin, then electroplate manufacture craft and form solder projection 120.Before forming solder projection 120, can comprise more forming another kind of layer 112 (Fig. 1 F) earlier that re-plating forms solder projection 120.Solder projection 120 can provide interval height, as the usefulness of separation material.The material of solder projection comprises tin, sn-ag alloy or leypewter.But,, also can omit this step if the follow-up solder projection that forms does not need Seed Layer.
With reference to Fig. 1 E, utilize the photoetching etching step, this polysilicon layer 104 (Figure 1B) in patterned substrate 100 fronts, the pattern of the polysilicon layer 104a of patterning (Fig. 1 F) is identical with the patterned metal layer 110a in substrate 100 fronts.Shown here, be the piezoelectricity sensing mechanism of utilizing piezoelectric material layer 106 and metal level to be constituted, and in follow-up connection procedure, can reach the purpose that coplane degree detects or positive force detects.
Among Fig. 1 E, the pattern of patterned polysilicon layer 104a comprises four cantilevers (follow-up as the suspension spring structure) at least and is positioned at the polysilicon structure of central authorities with four contact mats that link to each other.The number of cantilever is at least greater than one here, and the spacing dimension of its size visible connector or follow-uply be connected the pad size and adjust; Its contact mat shape is not limited to square, also can be circle or polygonal.For example comprise in the photoetching etching step that dark reactive ion etch step comes the etched pattern polysilicon layer.
With reference to Fig. 1 F, utilize the photoetching etching step, the Seed Layer 108 and the metal level 110b at patterned substrate 100 back sides form a hard mask layer 125.
With reference to Fig. 1 G, as etching mask, from back etched substrate 100 silicon substrates and the silicon oxide layer 102 of substrate 100,104a comes out until polysilicon layer with hard mask layer 125.This etching step for example comprises dark reactive ion etch step.
Please with reference to Fig. 1 H; Remove hard mask layer 125; Utilize graphical photoresist (not shown) then; The CNT material is coated on the contact mat 110c metal surface of metal level 110a, and utilize externally-applied magnetic field with CNT material collimation be combined on the central contact mat 110c surface and form a CNT layer 130, as probe.Afterwards, remove unnecessary photo anti-corrosion agent material again.
Figure 1A-Fig. 1 H only shows single connector, so that explain orally each layer formation relative position, but can represent the generality manufacture craft of manufacturing array connector.The formation step of above-mentioned each layer only is that the person can know by inference easily but have the general knowledge in this technical field for example, and those formation orders need change with equal optical pickups design of step or manufacture craft.The manufacturing approach of this case and non-limiting this case only limits to this.
Fig. 2 A illustrate is the schematic perspective view of the array connector of one embodiment of the invention.Fig. 2 B illustrate is amplified schematic perspective view into the array element of Fig. 2 A.Fig. 2 C is the generalized section of Fig. 2 B along hatching I-I '.All omit solder projection among Fig. 2 A-Fig. 2 C, describe with convenient.
With reference to Fig. 2 A, the connector 20 that the array-like of forming for a plurality of array element is arranged, single array element of enlarged and displayed painstakingly only among Fig. 2 B.Wherein, the substrate 200 of silicon substrate comprises ring bodies structure 200a and has a column structure 200b in central authorities.And a plurality of block structure 240a of tool are distributed in that ring bodies structure 200a goes up, single block structure 240b is positioned at four cantilever design 240c that central column structure 200b goes up and links to each other with single block structure 240b in the substrate 200.Have more a CNT layer 230 on the single block structure 240b.
Referring to Fig. 2 C, ring bodies structure 200a and central column structure 200b are laminated construction, comprise polysilicon layer 204, silicon oxide layer 202 and substrate 200 (from top to bottom).Can know from above-mentioned Fig. 1 G; With hard mask layer 125 as etching mask; From back etched substrate 100 silicon substrates and the silicon oxide layer 102 of substrate 100,104a comes out until polysilicon layer, can obtain ring bodies structure 200a and central column structure 200b like Fig. 2 B.
Referring to Fig. 2 C; Be distributed in block structure 240a on the ring bodies structure 200a, be positioned at the single block structure 240b on the central column structure 200b and also be laminated construction, comprise metal level 210a, Seed Layer 208a and polysilicon layer 204 with four cantilever design 240c.And cantilever design 240c is more more comprising a piezoelectric material layer 206 with block structure 240a connecting place both sides.The size of piezoelectric material layer 206 is much smaller than the size of cantilever design 240c, and its thickness and shape also can be adjusted according to design demand.
Because four cantilever springs link the stiff end place, each designs one group of piezoelectric, piezoelectric property capable of using, and sensing cantilever displacement advances the size that can estimate four positive forces that cantilever spring provides.Therefore the array-type micro connector will have the function of displacement and strength sensing.
Certainly, except utilizing piezoelectric, pressure drag material also capable of using or utilize the upper element contacting metal and the lower element contacting metal between formed electric capacity, with pressure drag or capacitance characteristic, sensing cantilever displacement or estimate the size of positive force.
Be positioned at CNT layer 230 on the single block structure 240b in follow-up encapsulation step; Because of CNT has favorable mechanical characteristic and conductivity; Under small contact force effect, can pierce through the oxide-film on contact (projection or the BGA packed tin ball) contact surface of other chips, and effectively reduce the size of contact resistance; Stability when increasing the signal transmission reaches good electrical and connects.
The material of each lamination of above-mentioned each structure can be with reference to material described in the aforementioned manufacture craft, but those materials still optical pickups design or manufacture craft need change.
According to another embodiment of the present invention, different with the manufacturing process of aforementioned Figure 1A is after Figure 1A forms polysilicon layer 104, omits the step that forms piezoelectric material layer.As shown in Figure 3, in substrate 300, form in regular turn after silicon oxide layer 302 and the polysilicon layer 304, directly form doped region 306 in the specific region with doping way, dopant for example is boron or germanium.This doped region 306 can be considered a pressure drag material, and the pressure drag sensing mechanism that can constitute with the metal level of follow-up formation reaches the purpose that coplane degree detects or positive force detects.Follow-up manufacture craft is with reference to the manufacturing process of earlier figures 1B-Fig. 1 H, and final structure is shown in Fig. 4.
Fig. 4 illustrate is the generalized section of the connector of another embodiment of the present invention.Omit solder projection among Fig. 4, describe with convenient.
Please with reference to Fig. 4, the substrate 400 of silicon substrate comprises ring bodies structure 400a and has a column structure 400b in central authorities.Ring bodies structure 400a and central column structure 400b are laminated construction, comprise polysilicon layer 404, silicon oxide layer 402 and substrate 400 (from top to bottom).Referring to Fig. 4, be positioned at block structure 440a on the ring bodies structure 400a, be positioned at the single block structure 440b on the central column structure 400b and also be laminated construction with cantilever design 440c, comprise metal level 410a, Seed Layer 408a and polysilicon layer 404.And cantilever design 440c more with the polysilicon layer 404 of block structure 440a connecting place both sides in tool doped region 406.Have more a CNT layer 430 on the single block structure 440b.
Be designed with pressure drag material (for example: doped region or other suitable metal) because cantilever spring links the stiff end place, and utilize this pressure drag sensed characteristic, the array-type micro connector will have the function of displacement and strength sensing.
Therefore the array-type micro connector of the embodiment of the invention designs in cantilever spring and connects stiff end place's tool piezoelectric or pressure drag material, can utilize piezoelectricity or pressure drag sensing mechanism respectively, measures the size of cantilever displacement and positive force that cantilever spring provides.And array connector of the present invention because of it has the mechanism that measures coplane degree and positive force, more can promote its function and industrial utilization applicable to high density or ultra fine-pitch connected structure.
In addition; The array connector is purchased the CNT structure on the contacting metal surface; Because of CNT has favorable mechanical characteristic and conductivity, under small contact force effect, can pierce through the oxide-film of projection or BGA tin ball contact surface; And effectively reduce the size of contact resistance, the stability when increasing signal and transmitting.
Manufacturing process proposed by the invention is compatible with existing manufacture craft, need not add additional step or use special material, so the cost of element does not increase.In addition, visual product design needs, adjustment manufacturing process steps and collocation difformity design, more flexiblely manufacturing array formula connector.
Though combined above preferred embodiment to disclose the present invention; Yet it is not in order to limit the present invention; Anyly be familiar with this operator; Do not breaking away from the spirit and scope of the present invention, can do a little change and retouching, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (11)
1. a connector construction is applicable in the encapsulating structure, and this connector construction comprises at least:
The semiconductor-based end,, it comprises ring bodies structure and the column structure that is positioned at these ring bodies structure central authorities at least;
At least one cantilever design links to each other with this column structure of these ring bodies structure central authorities;
A plurality of first block structures are positioned on this ring bodies structure;
A plurality of solder projections are positioned on those first block structures;
Second block structure is positioned on this column structure; And
The CNT layer is positioned at this second block structure on this column structure, and wherein this cantilever design and this ring bodies structure connecting place also comprise piezoelectric material layer or pressure drag material layer.
2. connector construction as claimed in claim 1, wherein this ring bodies structure and this column structure are laminated construction, comprise that also silicon oxide layer is positioned at a upper surface at this semiconductor-based end.
3. connector construction as claimed in claim 1, wherein this first, second block structure and this cantilever design are laminated construction, comprise polysilicon layer, be positioned at the Seed Layer on this polysilicon layer and be positioned at the metal level on this Seed Layer.
4. connector construction as claimed in claim 3, wherein this piezoelectric material layer is between this polysilicon layer and this Seed Layer.
5. connector construction as claimed in claim 4, wherein the material of this piezoelectric material layer comprises zinc oxide.
6. connector construction as claimed in claim 3, wherein this pressure drag material layer is that doped region is positioned among this polysilicon layer.
7. connector construction as claimed in claim 3, wherein the material of this metal level comprises aluminium, copper or gold.
8. connector construction as claimed in claim 3, wherein the material of this Seed Layer comprises titanium, gold or chromium.
9. connector construction as claimed in claim 1, wherein the material of this solder projection comprises tin, sn-ag alloy or leypewter.
10. connector construction as claimed in claim 1 comprises two relative cantilever designs at least.
11. connector construction as claimed in claim 1 comprises four cantilever designs relative to each other at least.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010004692 CN102130083B (en) | 2010-01-20 | 2010-01-20 | Array-type fine-pitch connector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010004692 CN102130083B (en) | 2010-01-20 | 2010-01-20 | Array-type fine-pitch connector |
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| CN102130083A CN102130083A (en) | 2011-07-20 |
| CN102130083B true CN102130083B (en) | 2012-08-08 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6578410B1 (en) * | 2001-08-10 | 2003-06-17 | Jacob Israelachvili | Resistive cantilever spring for probe microscopy |
| CN1837830A (en) * | 2005-03-22 | 2006-09-27 | 旺矽科技股份有限公司 | Elastic micro-contact element and manufacturing method thereof |
| CN101135700A (en) * | 2006-08-29 | 2008-03-05 | 日月光半导体制造股份有限公司 | Microcomputer electric detecting probe fasten with multiple layer elastic |
| CN101354404A (en) * | 2008-09-11 | 2009-01-28 | 上海交通大学 | Metal-silicon compound cantilever beam type microelectronic mechanical system probe card and manufacture method thereof |
| CN101559913A (en) * | 2009-05-15 | 2009-10-21 | 中国科学院上海微系统与信息技术研究所 | Structure for increasing strength and service life of deformable beam and application thereof |
-
2010
- 2010-01-20 CN CN 201010004692 patent/CN102130083B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6578410B1 (en) * | 2001-08-10 | 2003-06-17 | Jacob Israelachvili | Resistive cantilever spring for probe microscopy |
| CN1837830A (en) * | 2005-03-22 | 2006-09-27 | 旺矽科技股份有限公司 | Elastic micro-contact element and manufacturing method thereof |
| CN101135700A (en) * | 2006-08-29 | 2008-03-05 | 日月光半导体制造股份有限公司 | Microcomputer electric detecting probe fasten with multiple layer elastic |
| CN101354404A (en) * | 2008-09-11 | 2009-01-28 | 上海交通大学 | Metal-silicon compound cantilever beam type microelectronic mechanical system probe card and manufacture method thereof |
| CN101559913A (en) * | 2009-05-15 | 2009-10-21 | 中国科学院上海微系统与信息技术研究所 | Structure for increasing strength and service life of deformable beam and application thereof |
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| CN102130083A (en) | 2011-07-20 |
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