CN101354404A - Metal-silicon compound cantilever beam type microelectronic mechanical system probe card and manufacture method thereof - Google Patents
Metal-silicon compound cantilever beam type microelectronic mechanical system probe card and manufacture method thereof Download PDFInfo
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- CN101354404A CN101354404A CNA2008100427887A CN200810042788A CN101354404A CN 101354404 A CN101354404 A CN 101354404A CN A2008100427887 A CNA2008100427887 A CN A2008100427887A CN 200810042788 A CN200810042788 A CN 200810042788A CN 101354404 A CN101354404 A CN 101354404A
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Abstract
The invention relates to a metal-silicon composite cantilever beam typed micron-electronic mechanical system probing card and a preparation method thereof; an ultraviolet thick film photolithography and bulk silicon micro-processing composite process is adopted to prepare a metal-silicon composite cantilever beam probing card structure, thus replacing an existing probing card structure consisting of single silicon or metal. The ultraviolet thick film photolithography process is used for preparing the metal probe with high depth/width ratio and metal circuit transmission wires below the probes, and the bulk silicon micro-processing composite process is used to prepare the silicon cantilever beam structure. The force during the testing process is commonly borne by the silicon cantilever beam and the metal circuit above the silicon cantilever beam; the electric and mechanical property of the probing card structure is controlled by adjusting the geometrical parameters of the metal circuit leads and the silicon cantilever beam; the probes above the probing card can be arranged by the positions of the pins of the chip to be tested; the probe tips are corresponding to the position of the pins of the chip one by one. The end of the metal circuit transmission wire leads the circuit to be connected on the back surface by a through hole electro-plating or wire punching type on a silicon substrate and leads the circuits to be connected onto printing circuit boards and test machine platforms further.
Description
Technical field
The present invention relates to a kind of metal-silicon compound cantilever beam type microelectronic mechanical system detection card and preparation method thereof, the exploration card that makes is used for wafer chip test, belongs to the integrated circuit testing field.
Background technology
Wafer chip test is by under uncut state the integrated circuit on the disk being carried out dc parameter test, AC parameter test and functional test, check the integrated circuit ideal operation state on disk and the disk, whether the certificate parameter characteristic meets with expection and the stability and the reliability of circuit, and then therefrom finds out the method that improves yield rate, reduces the chip manufacturing cost and promote chip functions.Along with very large scale integration technology to the development of bigger integrated level and more speed, make that the quantity of I/O pin sharply increases on the chip, and size and spacing are dwindled constantly, like this chip testing of wafer level are had higher requirement.Epoxy resin/pin type exploration card that traditional-handwork is made is because the limitation of himself more and more is difficult to satisfy request for utilization.And the development of microelectromechanical systems (MEMS:Micro electro mechanical systems) technology has in recent years brought new method for the preparation of exploration card, and has obtained bigger progress.The MEMS exploration card of report mainly adopts plated metal or silicon as the probe structure material at present, as S.Park (S.Park, B.Kim, J.Kim, et al., A novel 3D process for single-crystal silicon micro-probe structures, Journal of Micromechanics and Microengineering, 2002,12:650-654) wait the people to introduce by little processing of mating surface silicon and body bulk silicon process and make the semi-girder and the needle point structure of high-aspect-ratio, this MEMS process is very novel, but owing to all adopt the silicon dry etch process to prepare the exploration card structure, processing step is many, the cost height; And do not consider the circuit lead problem of probe.Y.Cho (Y.Cho, T.Kuri, Y.Fukuta, et al., Fabrication of sharp knife-edged micro probe card combinedwith shadow mask deposition, 2004,114:327-331) wait the people to adopt silicon potassium hydroxide wet etching and dry etch process to make silicon cantilever and top needle point structure, by thermal evaporation chromium and gold on the semi-girder surface coverage, use shade method sputtering sedimentation tungsten to needle point.This process is improved than the former, has adopted wet etching, not only can obtain more tiny needle point, also reduced the technology cost, and probe spacing has been narrowed down to 40 μ m, but processing step is still more on the whole, does not consider the problem of circuit lead equally.F.Wang (F.Wang, X.Li, N.Guo, et al., A silicon cantilever probe cardwith tip-to-pad electric feed-through and automatic isolation of the metal coating, Journal of Micromechanics and Microengineering, 2006,16:1215-1220) wait the people to adopt the silicon deep etching technology to prepare the silicon cantilever structure, by splash-proofing sputtering metal on the silicon cantilever probe structure, the connection of employing through hole lead-in wire to back side circuit, has realized that the circuit of whole exploration card connects from probe.This texture ratio is more successful, but the total complicated process of preparation, the cost height.In addition, some researchists attempt adopting plated metal as the exploration card structured material, but present MEMS process technology also is difficult to obtain the plated metal probe structure of three-dimension suspending.
Utilize the MEMS processing technology,, prepare that number of probes is many, spacing is little, the MEMS exploration card of dependable performance is the developing direction of wafer chip test by structural design.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, propose a kind of metal-silicon compound cantilever beam type microelectronic mechanical system detection card and preparation method thereof, technology is simple, yield rate is high, the novel MEMS exploration card performance brilliance of preparation.
For achieving the above object, the present invention adopts ultraviolet thick resist lithography and the little processing combination process of body silicon, makes metal-silicon compound cantilever beam exploration card structure, replaces the exploration card structure that is made of independent silicon or metal at present.Adopt ultraviolet thick resist lithography technology to prepare the high-aspect-ratio metal probe, and the metallic circuit transmission line of probe below, adopt the body bulk silicon process to make the silicon cantilever structure.The stressed silicon cantilever of being made by the body bulk silicon process in the test process and the metallic circuit of top thereof are born jointly, control the electricity and the mechanical property of exploration card structure by the geometric parameter of regulating metallic circuit lead-in wire and silicon cantilever.Probe on the exploration card is arranged according to the position of chip pin to be measured, and probe tip is corresponding one by one with the relevant chip Pin locations.The end of metallic circuit transmission line is connected to the back side by the mode of the electroplates in hole on the silicon chip or routing with circuit, and and then is connected to printed circuit board (PCB) and tester table
Metal-silicon compound cantilever beam type microelectronic mechanical system detection card of the present invention comprises substrate, probe and metal lead wire, described substrate is through photoetching and etching, make semi-girder on a face therein, on the another one face, make the window that is used to discharge cantilever beam structure, arrange metal lead wire on the silicon cantilever, probe is positioned at the top of metal lead wire, and according to the position array arrangement of chip pin to be measured, probe tip is corresponding one by one with the relevant chip Pin locations, the metal lead wire of probe bottom extends to the periphery, peripheral leads is connected on the printed circuit board (PCB) by electroplating ventilating hole or routing, is connected to tester table by printed circuit board (PCB) again.
The preparation method of exploration card of the present invention realizes as follows:
1, adopting silicon chip is substrate, after two-sided oxidation, make the silicon cantilever of length 100-2000 μ m, width 10-100 μ m, thickness 5-50 μ m therein on face by the method for photoetching and etching, the opening shape of photoetching and etching chip unit size to be measured on the another one face.
2, the Cr/Cu Seed Layer of sputter 50-150nm on the silicon cantilever surface after the etching, photoetching then, plated metal, the metal lead wire of preparation length 100-2000 μ m, width 8-80 μ m, thickness 2-20 μ m.
3, above metal lead wire, the metal probe of photoetching, plating height 10-20 μ m, diameter 5-20 μ m.
4, remove photoresist and Cr/Cu Seed Layer.
5, adopt the method for silicon wet method or dry etching, etch silicon discharges the silicon cantilever structure to the required thickness of semi-girder from the negative.
6, employing method of the electroplates in hole on silicon chip is connected to the other one side of substrate with metal lead wire, perhaps adopts the method for routing to connect metal lead wire to peripheral printed circuit board (PCB), and then links to each other with tester table by printed circuit board (PCB).
The advantage of this design:
1, improves the electric property of exploration card.Because probe and circuit lead all adopt plated metal,, can obviously improve electric property with respect to the method for splash-proofing sputtering metal conduction on the silicon cantilever;
2, exploration card has good, controlled mechanical property.Semi-girder has adopted silicon and two kinds of materials of metal, can be by regulating shape and the geometric parameter mechanical property of controlling semi-girder separately, the semi-girder cross section is a T type girder construction, therefore improved the rigidity of structure of semi-girder than the square-section, in addition, adopt the composite cantilever of metal and silicon materials preparation to have better structural elasticity and recovery than the beams of metal structure;
3, work simplification, cost is low.With respect to the semi-girder exploration card structure of the micro-machined method preparation of whole employing body silicon, the design is simplified processing process greatly, simultaneously, the design has adopted ultraviolet thick resist lithography processing technology and body chemistry of silicones wet-etching technology, cost is low, and speed is fast, is applicable to large-scale production.
Description of drawings
Fig. 1 is a compound cantilever beam type MEMS exploration card structural representation provided by the invention.
Among Fig. 1,1 is probe, and 2 are the metallic circuit lead-in wire, and 3 is Seed Layer, and 4 is monox, and 5 is silicon chip, and 6 is printed circuit board (PCB), and 7 is soldered ball, and 8 are the routing lead-in wire.
Fig. 2 is the technological process of metal-silicon compound cantilever beam type microelectronic mechanical system detection card.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment technical scheme of the present invention is further described.Following examples do not constitute limitation of the invention.
Metal-silicon compound cantilever beam type microelectronic mechanical system detection card structure of the present invention as shown in Figure 1, comprise silicon chip 5, probe 1 and metal lead wire 2, silicon chip 5 is through photoetching and etching, make semi-girder on a face therein, on the another one face, make the window that is used to discharge cantilever beam structure, arrange metal lead wire 2 on the silicon cantilever, probe 1 is positioned at the top of metal lead wire 2, and according to the position array arrangement of chip pin to be measured, probe tip is corresponding one by one with the relevant chip Pin locations, the metal lead wire 2 of probe 1 bottom extends to the periphery, peripheral leads is connected on the printed circuit board (PCB) by electroplating ventilating hole or routing, is connected to tester table by printed circuit board (PCB) again.
Fig. 2 is the process chart of metal-silicon compound cantilever beam type microelectronic mechanical system detection card preparation of the present invention.
Among Fig. 2, step (1), two-sided etching silicon chip; Step (2), plating preparation metal lead wire; Step (3), plating preparation metal probe; Step (4), removal photoresist and Cr/Cu Seed Layer; Step (5), etch silicon from the negative discharge the silicon cantilever structure; Step (6), be connected on the printed circuit board (PCB) by electroplating ventilating hole or routing.
Select the structural parameters of composite cantilever exploration card to be: beam length 700 μ m, silicon layer width 80 μ m, thickness 20 μ m, copper layer width 60 μ m, thickness 10 μ m, nickel column diameter 20 μ m, height 20 μ m.
(1) two-sided etching silicon chip: adopting thickness is (100) monocrystalline silicon piece of 450 μ m, washed with de-ionized water after the sulfuric acid cleaned, and baking is 3 hours in 180 ℃ of baking ovens; Adopt thermal oxidation method to prepare the silicon dioxide layer of the about 2 μ m of thickness; Oxide layer is carved the mask layer of silicon technology as follow-up wet method; At first get rid of the positive glue AZ4620 of 3 μ m on first, baking is 1 hour in 90 ℃ of vacuum drying ovens, and the positive glue AZ4620 of 3 μ m is got rid of at the same then back side, and baking is 1 hour in 90 ℃ of vacuum drying ovens; The semi-girder figure 50 seconds that positive 700 μ m are long, 80 μ m are wide that exposes developed 1 minute, and alignment back side graph window exposed 50 seconds then, developed 1 minute, cleaned in back 120 ℃ of baking ovens curing 30 minutes; Etching silicon dioxide is 20 minutes in 45 ℃ of 10% hydrofluorite, wherein back side alignment symbology place etching is after 10 minutes, resist coating covers, solidify after 30 minutes in 120 ℃ of baking ovens and continued etching 10 minutes, can form thick, the step-like silicon dioxide alignment symbology of about 1 μ m like this, as the alignment symbology of back technology; The ultrasonic removal of acetone two sides photoresist; Adopt the thickness of 40% potassium hydroxide front wet etching silicon to 20 μ m, 78 ℃ of etching temperatures, etching time 20 minutes, the etching back side simultaneously forms graph window.
(2) preparation metal lead wire: the Cr/Cu Seed Layer of positive sputter 100nm; Positive-glue removing AZ4903: the positive glue AZ4903 of 12 μ m is got rid of in the front, rose to 60 ℃, insulation 20 minutes from room temperature, rise to 70 ℃, rise to 75 ℃ with 3 minutes 2 ℃ speed again with the speed of 1 ℃ of per minute, speed with 0.5 ℃ of per minute rises to 80 ℃, is incubated 15 minutes then, and is cold with stove; The employing back side is aimed at, and front lighting carves the copper lead-in wire figure on the silicon cantilever, exposes 120 seconds, develops 60 seconds; The copper conductor of electroplating thickness 10 μ m, strength of current are 200mA, and electroplating time is 60 minutes.
(3) preparation metal probe: the positive glue AZ4903 of 23 μ m is got rid of in the front, in the drying glue in order to prevent the foaming of being heated once more of lower floor's photoresist, need to adopt slow ladder-elevating temperature method: rise to 60 ℃, be incubated 20 minutes from room temperature, speed with 1 ℃ of per minute rises to 70 ℃, rise to 75 ℃ with 3 minutes 2 ℃ speed again, speed with 0.5 ℃ of per minute rises to 80 ℃, is incubated 15 minutes then, and is cold with stove; The employing back side is aimed at, and front lighting carves the cylinder figure of nickel probe on the semi-girder, exposes 250 seconds, develops 2 minutes; Diameters 20 μ m, the nickel cylinder of thickness 20 μ m because the hole is little, at first will be used O
2Plasma etching 1 minute removes the hole inner bottom part clean photoresist that do not develop, and increases wettability of the surface simultaneously, and electroplating process should be selected less electric current for use, and strength of current is 60mA, and electroplating time is 120 minutes.
(4) remove photoresist and Seed Layer: remove positive two-layer photoresist in the acetone million; Adopt RIE dry etching Cr/Cu Seed Layer, select the Ar plasma for use, flow is 20sccm, power 30W, etching 30 minutes;
(5) semi-girder discharges: adopt the potassium hydroxide solution wet etching; the substrate front need be protected with anchor clamps; and can not carve by wet etching and wear silicon layer; according to the corrosion rate control time of potassium hydroxide solution; stop etching when keeping, then substrate is taken out from anchor clamps carefully, use washed with de-ionized water apart from the thick silicon fiml of (1) step gained silicon trench bottom 10～15 μ m; wear silicon fiml quarter from the back side by the RIE method, discharge cantilever beam structure.
(6) with peripheral printed circuit board interconnect: adopt the method for the electroplates in hole or routing to be connected metal lead wire, finish the exploration card preparation to printed circuit board (PCB).
Select the structural parameters of composite cantilever exploration card to be: beam length 2000 μ m, silicon layer width 100 μ m, thickness 50 μ m, copper layer width 80 μ m, thickness 20 μ m, nickel column diameter 8 μ m, height 15 μ m.
(1) two-sided etching silicon chip: adopt (100) monocrystalline silicon piece of thickness 450 μ m, washed with de-ionized water after the sulfuric acid cleaned, baking is 3 hours in 180 ℃ of baking ovens; Adopt the silicon dioxide of the about 2 μ m of the two-sided generation thickness of method of thermal oxide; Oxide layer is carved the mask layer of silicon technology as follow-up wet method; At first get rid of the positive glue AZ4620 of 3 μ m on first, baking is 1 hour in 90 ℃ of vacuum drying ovens, and the positive glue AZ4620 of 3 μ m is got rid of at the same then back side, and baking is 1 hour in 90 ℃ of vacuum drying ovens; The expose semi-girder figure 50 seconds of positive face length 2000 μ m, wide 100 μ m developed 30 seconds, and alignment back side graph window exposed 50 seconds then, developed 30 seconds, cleaned in back 120 ℃ of baking ovens to solidify 30 minutes; Etching silicon dioxide is 20 minutes in 45 ℃ of 10% hydrofluorite, wherein back side alignment symbology place etching is after 10 minutes, resist coating covers, solidify after 30 minutes in 120 ℃ of baking ovens and continued etching 10 minutes, can form thick, the step-like silicon dioxide alignment symbology of about 1 μ m like this, as the alignment symbology of back technology; The ultrasonic removal of acetone two sides photoresist; Adopt the thickness of 40% potassium hydroxide front wet etching silicon to 50 μ m, 78 ℃ of etching temperatures, etching time 50 minutes, the etching back side simultaneously forms graph window;
(2) preparation metal lead wire: the Cr/Cu Seed Layer of positive sputter 150nm; The positive glue of 25 μ mAZ4903 is got rid of in the front, rises to 60 ℃, insulation 20 minutes from room temperature, rises to 70 ℃ with the speed of 1 ℃ of per minute, rises to 75 ℃ with 3 minutes 2 ℃ speed again, rises to 80 ℃, insulation 15 minutes with the speed of 0.5 ℃ of per minute then, and is cold with stove; The employing back side is aimed at, and front lighting carves the copper conductor figure on the silicon cantilever, exposes 250 seconds, develops 2 minutes; The copper lead-in wire of electroplating thickness 20 μ m, strength of current is 200mA, electroplating time is 120 minutes;
(3) preparation probe: positive-glue removing: the positive glue of 20 μ m AZ4903 is got rid of in the front, in the drying glue in order to prevent the foaming of being heated once more of lower floor's photoresist, need to adopt slow ladder-elevating temperature method: rise to 60 ℃, be incubated 20 minutes from room temperature, speed with 1 ℃ of per minute rises to 70 ℃, rise to 75 ℃ with 3 minutes 2 ℃ speed again, speed with 0.5 ℃ of per minute rises to 80 ℃, is incubated 15 minutes then, and is cold with stove; The employing back side is aimed at, and front lighting carves the cylinder figure of diameter 8 μ m nickel probes on the semi-girder, 200 seconds time shutter, development time 90 seconds; Diameters is 8 μ m, and the nickel cylinder of thickness 15 μ m because the hole is little, at first will be used O
2Plasma etching 1 minute removes the hole inner bottom part clean photoresist that do not develop, and increases wettability of the surface simultaneously, and electroplating process should be selected less electric current for use, and strength of current is 60mA, and electroplating time is 90 minutes.
(4) remove photoresist and Seed Layer: remove positive two-layer photoresist in the acetone million; Adopted ammoniacal liquor and hydrogen peroxide solution etching Seed Layer 10 seconds;
(5) semi-girder discharges: adopt silicon deep reaction ion etching method to carve from the back side and wear to silicon cantilever thickness, discharge cantilever beam structure.
(6) with peripheral printed circuit board interconnect: adopt the method for the electroplates in hole or routing to be connected metal lead wire, finish the exploration card preparation to printed circuit board (PCB).
Select the structural parameters of composite cantilever exploration card to be: beam length 100 μ m, silicon layer width 10 μ m, thickness 5 μ m, copper layer width 8 μ m, thickness 2 μ m, nickel column diameter 5 μ m, height 10 μ m.
(1) two-sided etching silicon chip: adopt (100) monocrystalline silicon piece of thickness 450 μ m, washed with de-ionized water after the sulfuric acid cleaned, baking is 3 hours in 180 ℃ of baking ovens; Adopt the silicon dioxide of the about 2 μ m of the two-sided generation thickness of method of thermal oxide; Oxide layer is carved the mask layer of silicon technology as follow-up wet method; At first get rid of the positive glue AZ4620 of 3 μ m on first, baking is 1 hour in 90 ℃ of vacuum drying ovens, and the positive glue AZ4620 of 3 μ m is got rid of at the same then back side, and baking is 1 hour in 90 ℃ of vacuum drying ovens; The semi-girder figure that face exposure 100 μ m are long, 10 μ m are wide 50 seconds developed 30 seconds, and alignment back side graph window exposed 50 seconds then, developed 30 seconds, cleaned in back 120 ℃ of baking ovens to solidify 30 minutes; At 45 ℃ with 10% hf etching silicon dioxide 20 minutes, wherein back side alignment symbology place etching is after 10 minutes, resist coating covers, solidify after 30 minutes in 120 ℃ of baking ovens and continued etching 10 minutes, can form thick, the step-like silicon dioxide alignment symbology of about 1 μ m like this, as the alignment symbology of back technology; The ultrasonic removal of acetone two sides photoresist; Adopt the two-sided wet etching silicon 5 μ m of 40% potassium hydroxide, 78 ℃ of etching temperatures, etching time 5 minutes, the etching back side simultaneously forms graph window;
(2) preparation metal lead wire: the Cr/Cu Seed Layer of positive sputter 50nm; The positive glue AZ4620 of 4 μ m is got rid of in the front, and baking is 1 hour in 90 ℃ of vacuum drying ovens; The employing back side is aimed at, and front lighting carves the copper conductor figure on the silicon cantilever, exposes 30 seconds, develops 30 seconds; The copper conductor of electroplating thickness 2 μ m, strength of current are 200mA, and electroplating time is 12 minutes;
(3) preparation probe: the positive glue of 15 μ m AZ4903 is got rid of in the front, in the drying glue in order to prevent the foaming of being heated once more of lower floor's photoresist, need to adopt slow ladder-elevating temperature method: rise to 60 ℃, be incubated 20 minutes from room temperature, speed with 1 ℃ of per minute rises to 70 ℃, rise to 75 ℃ with 3 minutes 2 ℃ speed again, speed with 0.5 ℃ of per minute rises to 80 ℃, is incubated 15 minutes then, and is cold with stove; The employing back side is aimed at, and front lighting carves the cylinder figure of nickel probe on the semi-girder, 120 seconds time shutter, development time 60 seconds; Diameters is 5 μ m, and the nickel cylinder of thickness 10 μ m because the hole is little, at first will be used O
2Plasma etching 1 minute removes the hole inner bottom part clean photoresist that do not develop, and increases wettability of the surface simultaneously, and electroplating process should be selected less electric current for use, strength of current 60mA, electroplating time: 60 minutes;
(4) remove photoresist and Seed Layer: remove positive two-layer photoresist in the acetone million; The liquor ferri trichloridi etching copper Seed Layer of employing 1% 1 minute; Adopt RIE dry etching chromium then, select the Ar plasma for use, flow 20sccm, power 30W, etching time are 10 minutes;
(5) semi-girder discharges: adopt the potassium hydroxide solution wet etching; the substrate front need be protected with anchor clamps; and can not carve by wet etching and wear silicon layer; according to the corrosion rate control time of potassium hydroxide solution; stop etching when keeping, then substrate is taken out from anchor clamps carefully, use washed with de-ionized water apart from the thick silicon fiml of (1) step gained silicon trench bottom 10～15 μ m; wear silicon fiml quarter from the back side by the RIE method, discharge cantilever beam structure.
(6) with peripheral printed circuit board interconnect: adopt the method for the electroplates in hole or routing to be connected metal lead wire, finish the exploration card preparation to printed circuit board (PCB).
Claims (2)
1, a kind of metal-silicon compound cantilever beam type microelectronic mechanical system detection card, comprise substrate (5), probe (1) and metal lead wire (2), it is characterized in that described substrate (5) is through photoetching and etching, make semi-girder on a face therein, on the another one face, make the window that is used to discharge cantilever beam structure, arrange metal lead wire (2) on the silicon cantilever, probe (1) is positioned at the top of metal lead wire (2), and according to the position array arrangement of chip pin to be measured, probe tip is corresponding one by one with the relevant chip Pin locations, the metal lead wire (2) of probe (1) bottom extends to the periphery, peripheral leads is connected on the printed circuit board (PCB) by electroplating ventilating hole or routing, is connected to tester table by printed circuit board (PCB) again.
2, the preparation method of metal-silicon compound cantilever beam type microelectronic mechanical system detection card as claimed in claim 1 is characterized in that comprising the steps:
(1) adopting silicon chip is substrate, after two-sided oxidation, make the silicon cantilever microstructure of length 100-2000 μ m, width 10-100 μ m, thickness 5-50 μ m therein on face by the method for photoetching and etching, the opening shape of photoetching and etching chip unit size to be measured on the another one face;
(2) the Cr/Cu Seed Layer of sputter 50-150nm on the silicon cantilever micro-structure surface after the etching, photoetching then, plated metal, the metal lead wire of preparation length 100-2000 μ m, width 8-80 μ m, thickness 2-20 μ m;
(3) above metal lead wire, the metal probe of photoetching, plating height 10-20 μ m, diameter 5-20 μ m;
(4) remove photoresist and Cr/Cu Seed Layer;
(5) adopt the method for silicon dry method or wet etching, the required thickness from back-etching silicon to semi-girder discharges the silicon cantilever structure;
(6) employing method of the electroplates in hole on silicon chip is connected to the other one side of substrate with metal lead wire, perhaps adopts the method for routing to connect metal lead wire to peripheral printed circuit board (PCB), and then links to each other with tester table by printed circuit board (PCB).
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| CN102130083B (en) * | 2010-01-20 | 2012-08-08 | 财团法人工业技术研究院 | Array-type fine-pitch connector |
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| CN105329845A (en) * | 2014-07-31 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Cantilever beam manufacturing method, cantilever beam and MEMS device |
| CN105329845B (en) * | 2014-07-31 | 2017-10-27 | 中芯国际集成电路制造(上海)有限公司 | Preparation method, cantilever beam and the MEMS of cantilever beam |
| CN111198313A (en) * | 2018-10-31 | 2020-05-26 | 昆山工研院新型平板显示技术中心有限公司 | Micro-element detection device and manufacturing method thereof |
| CN111766415A (en) * | 2020-08-14 | 2020-10-13 | 强一半导体（苏州）有限公司 | Template burning method for guide plate MEMS probe structure |
| CN111766415B (en) * | 2020-08-14 | 2020-12-25 | 强一半导体（苏州）有限公司 | Template burning method for guide plate MEMS probe structure |
| CN116106591A (en) * | 2023-01-10 | 2023-05-12 | 佛山市蓝箭电子股份有限公司 | Manufacturing method of microwave probe and microwave probe |
| CN116106591B (en) * | 2023-01-10 | 2023-09-19 | 佛山市蓝箭电子股份有限公司 | Manufacturing method of microwave probe and microwave probe |
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