CN102117769A - Manufacturing method of light-emitting diode chip - Google Patents
Manufacturing method of light-emitting diode chip Download PDFInfo
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- CN102117769A CN102117769A CN2009103127450A CN200910312745A CN102117769A CN 102117769 A CN102117769 A CN 102117769A CN 2009103127450 A CN2009103127450 A CN 2009103127450A CN 200910312745 A CN200910312745 A CN 200910312745A CN 102117769 A CN102117769 A CN 102117769A
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Abstract
The invention discloses a manufacturing method of a light-emitting diode chip, which comprises the steps of: providing a sapphire substrate; forming a gallium nitride based-extension film on the sapphire substrate; etching a plurality of exhaust passages on the surface of the gallium nitride based extension film so as to divide the gallium nitride based extension film into a plurality of unit devices; forming a reflecting layer on the surface of the gallium nitride based extension film; splicing the reflecting layer on a conductive substrate; separating the gallium nitride based extension film from the sapphire substrate by using a laser stripping method, and exhausting the gas generated in stripping through the exhaust passages; and cutting a heat-conducting substrate along the exhaust passages so as to obtain an independent light-emitting diode chip. The light-emitting diode chip prepared by the method has higher yield.
Description
Technical field
The present invention relates to a kind of preparation method of light-emitting diode chip for backlight unit.
Background technology
(Light Emitting Diode LED) is a kind of semiconductor device that current conversion can be become the light of particular range of wavelengths to light-emitting diode.Light-emitting diode with its brightness height, operating voltage is low, power consumption is little, easily with the integrated circuit coupling, drive advantages such as simple, life-span length, thereby can be used as light source and be widely used in lighting field.III V family metal nitride materials (claiming gallium nitride-based material again) based on GaN and InGaN, AIGaN is the novel semiconductor material of extremely paying attention in the world in recent years.Such material also is a preferable material comparatively when preparing short wavelength's semiconductor photoelectronic device and high frequency, high pressure, high temperature microelectronic component at present.
At present, gallium nitride based LED generally adopts sapphire as substrate, by the method preparation of heteroepitaxy.Yet,, be not suitable for direct matrix as led chip because conduction, the heat conductivility of Sapphire Substrate are relatively poor.Therefore, how gallium nitride-based epitaxial film is peeled off from Sapphire Substrate, and further transferred to the key that has become the preparation high-power gallium nitride based LED on another high heat-conductivity conducting matrix.Laser-stripping method (LLO, Laser Lift-off) be to adopt the laser of ultraviolet light wave band to see through the Sapphire Substrate irradiation sample, make the gallium nitride generation thermal decomposition at sapphire/gallium nitride interface and generate the residue of nitrogen and gallium, with the method that realizes that Sapphire Substrate is separated with gallium nitride.
Yet in the laser lift-off process, the gas that laser radiation moment is produced can produce stronger impulsive force to the zone of action, and this impulsive force will make on every side the chip warpage that deforms, even crackle occurs, causes the chip yield lower thus.
Summary of the invention
In view of above-mentioned condition, be necessary to provide the preparation method of the higher light-emitting diode chip for backlight unit of a kind of yield.
A kind of preparation method of light-emitting diode chip for backlight unit comprises the steps: to provide a sapphire substrate; On sapphire substrate, form gallium nitride-based epitaxial film; Go out many exhaust ducts at the gallium nitride-based epitaxial film surface etching, gallium nitride-based epitaxial film is separated into a plurality of unit components; Form a reflector on the gallium nitride-based epitaxial film surface; The reflector is adhered to an electrically-conductive backing plate; Use laser-stripping method that gallium nitride-based epitaxial film is separated with sapphire substrate, and the gas that produces when peeling off is released from many exhaust ducts; And along exhaust duct cutting heat-conducting substrate, to obtain the independent LED core sheet.
Owing to gone out many exhaust ducts at the gallium nitride-based epitaxial film surface etching, when using laser-stripping method that gallium nitride-based epitaxial film is separated with sapphire layer, the gas that produces can release from many exhaust ducts, thereby reduce the impulsive force of gas to gallium nitride-based epitaxial film, reduce the possibility that distortion, crackle appear in chip, improved the yield of chip.
Description of drawings
Fig. 1 is the preparation flow figure of the light-emitting diode chip for backlight unit of the embodiment of the invention.
Fig. 2 to Fig. 7 is the schematic cross-section of each step in the preparation process of light-emitting diode chip for backlight unit of the embodiment of the invention.
Fig. 8 is the floor map of etching step in the preparation process of light-emitting diode chip for backlight unit of the embodiment of the invention.
Fig. 9 is the floor map during laser lift-off in the preparation process of light-emitting diode chip for backlight unit of the embodiment of the invention.
The main element symbol description
| Sapphire |
10 |
| The gap | 11 |
| Gallium nitride-based epitaxial film | 20 |
| N |
21 |
| Active layer | 23 |
| P |
25 |
| |
27 |
| The |
28 |
| |
281 |
| Peel off |
29 |
| The |
30 |
| Electrically- |
40 |
| |
50 |
| |
51 |
Embodiment
Preparation method to light-emitting diode chip for backlight unit of the present invention is described in further detail below in conjunction with drawings and Examples.
Fig. 1 is the preparation flow figure of embodiment of the invention light-emitting diode chip for backlight unit.The preparation method of this light-emitting diode chip for backlight unit may further comprise the steps:
Step S1 provides the sapphire substrate (sapphire substrate) of a circle.
Step S2 forms gallium nitride-based epitaxial film on this sapphire substrate.See also Fig. 2, adopt Metalorganic Chemical Vapor Deposition (MOCVD, metal organic chemical vapour deposition) on sapphire substrate 10, to form circular gallium nitride-based epitaxial film 20.Gallium nitride-based epitaxial film 20 comprises n type GaN layer 21, active layer 23 and the p type GaN layer 25 that stacks gradually.The formation method of gallium nitride-based epitaxial film 20 also can be molecular beam epitaxy (MBE, molecular beam epitaxy), hydride vapour phase epitaxy method (HVPE, hydride vapor Phase epitaxy) etc.
Step S3 goes out many exhaust ducts at this gallium nitride-based epitaxial film surface etching, so that this gallium nitride-based epitaxial film is separated into a plurality of unit components.See also Fig. 3, adopt inductive coupling type plasma method (ICP, Inductive Couple Plasma) etch system to go out deep a plurality of exhaust ducts 27 to sapphire substrate 10 at the surface etching of gallium nitride-based epitaxial film 20.The width of each exhaust duct is 10 ~ 500 microns.Please in the lump referring to Fig. 8, many exhaust duct 27 is cross arrangement in length and breadth, and the gallium nitride-based epitaxial film 20 of circle is separated into is positioned at its middle part, by the diagram foursquare device trough that dashed region surrounded 28 be positioned at and peel off sacrificial region 29 around the device trough 28.Device trough 28 is deflated 27 and further is divided into the identical foursquare unit component 281 of a plurality of shape sizes.These a plurality of unit components 281 are along the bearing of trend proper alignment of exhaust duct 27, and each unit component 281 is of a size of 100 ~ 2000 microns.The purpose of above-mentioned separation is for protected location device 281, promptly avoids in the laser lift-off process, and the impulsive force that produces during laser beam irradiation spreads to full wafer gallium nitride-based epitaxial film 20 and impairment unit device 281.The engraving method of exhaust duct 27 can be to coat the photoresist layer on the surface of gallium nitride-based epitaxial film 20 earlier, adopt the method for exposure imaging to remove corresponding photoresist layer then, the part that is not covered with the etching of ICP etching method then by the photoresist layer, thus many exhaust ducts 27 formed.Be appreciated that exhaust duct 27 also can form by other etching modes such as chemical etchings.
Step S4 forms a reflector on this gallium nitride-based epitaxial film surface.See also Fig. 4, on the p of gallium nitride-based epitaxial film 20 type GaN layer 25, use plasma activated chemical vapour deposition method (PECVD, Plasma-enhanced chemical vapordeposition) deposition one deck to have the reflector 30 of high reflectance.Reflector 30 can be a Bragg reflecting layer, also can be by made metallic mirror surface reflector of metal such as silver, nickel, aluminium, copper, gold.The purpose in reflector 30 is active layer 23 is reflected towards the light that p type GaN layer 25 is sent, and it is sent from n type GaN layer 21 surface, improves the light extraction efficiency of whole light-emitting diode chip for backlight unit.In the present embodiment, reflector 30 is a silver layer.Also can realize by the mode of electron beam, sputter, vacuum evaporation or plating in reflector 30.In addition, when forming reflector 30, can enter exhaust duct 27 to avoid metal as far as possible by methods such as mask control deposition site.
Step S5 is adhered to an electrically-conductive backing plate with this reflector.See also Fig. 5, make reflector 30 be adhered to an electrically-conductive backing plate 40.This bonding mode can be wafer bonding (wafer bonding), or electroplates.In the present embodiment, adopt the mode of electroplating on reflector 30, to plate a metal nickel dam.Adopt this metal nickel dam as electrically-conductive backing plate 40.
Step S6 uses laser-stripping method (LLO, laser lift-off) that this gallium nitride-based epitaxial film is separated with this sapphire layer.What this laser-stripping method used is the excimer laser (excimer laser) of wavelength at the ultraviolet light wave band.See also Fig. 6, when peeling off, the pulsed laser beam 50 that excimer laser makes emission scans from the not formation gallium nitride-based epitaxial film 20 1 side vertical incidence of sapphire substrate 10.When the energy of this pulsed laser beam 50 is between gallium nitride and sapphire energy gap, this Shu Jiguang will can not absorbed by sapphire substrate 10, but the gallium nitride that can be positioned at gallium nitride and sapphire interface place absorbs, and produce gallium and nitrogen, thereby gallium nitride-based epitaxial film 20 is separated with sapphire substrate 10 and produce gap 11.
Please in the lump referring to Fig. 9, in order to improve scan efficiency and to make full use of laser activity, pulsed laser beam 50 is radiated at and forms a square hot spot 51 on the gallium nitride-based epitaxial film 20.The size of this hot spot 51 is identical or bigger with unit component 281, and the dimension difference of hot spot 51 and unit component 281 is no more than 200 microns.In the present embodiment, the size of hot spot 51 is identical with unit component 281.The mode that 50 pairs of gallium nitride-based epitaxial films 20 of pulsed laser beam scan comprises step by step following:
(1) makes initial hot spot 51 appear at the edge of peeling off sacrificial region 29, and make hot spot 51 parts be positioned at the outside of gallium nitride-based epitaxial film 20.And, make a column unit device 281 of hot spot 51 and device trough 28 leftmost sides adjacent and keep aliging.Owing to be positioned at the exhaust duct 27 of peeling off sacrificial region 29 and directly communicate with external environment condition, so the gas that is produced during laser radiation can be released along exhaust duct 27 at once, and is less to the impulsive force of full wafer gallium nitride-based epitaxial film 20.Distortion appears in sacrificial region 29 or crackle also is unlikely to the unit component in the device trough 28 281 is affected greatly even peeling off.Through after the laser radiation, peel off gallium nitride-based epitaxial films 20 in the sacrificial region 29 and separate with sapphire substrate 10 and produce gap 11.
(2) make hot spot 51 carry out straight line and move, progress into device trough 28 and the unit component 281 of the tops of this row is scanned along the bearing of trend of exhaust duct 27.In this process, the gas that device trough 28 is produced during by laser radiation can either release along exhaust duct 27, can release along peeling off gallium nitride-based epitaxial film 20 in the sacrificial region 29 and the gap 11 between the sapphire substrate 10 again, therefore can reduce the impulsive force of the gas of irradiation generation, make it be unlikely to produce distortion or crackle this unit component 281 in the device trough 28.Because the hot spot 51 of initial condition keeps aliging with unit component 281, and the size of hot spot 51, shape are identical with unit component 281, therefore hot spot 51 has one can overlap fully with this unit component 281 constantly in the process of scanning, can disposable this unit component 281 be separated with sapphire substrate 10 like this.Certainly, if the size of hot spot 51 is more bigger than unit component 281, then hot spot 51 can cover this unit component 281 when scanning fully.
(3) hot spot 51 continues to move downward and will be listed as remaining unit component 281 and all scans.
(4) after hot spot 51 passed device trough 28 and moves to another that be positioned at gallium nitride-based epitaxial film 20 edges and peel off sacrificial region 29, laser stopped the emission pulse laser bundle.
(5) adjust the position of laser, new hot spot 51 is appeared at formerly peel off sacrificial region 29, and the adjacent and maintenance of new hot spot 51 and another column unit device 281 is alignd.This another column unit device 281 is adjacent with that scanned column unit device 281.
(6) repeating step (2) is to step (5), till each column unit device 281 all is scanned.
Step S7 cuts this heat-conducting substrate along this exhaust duct, to obtain chip.See also Fig. 7, cut or the scribing processing along 27 pairs of electrically-conductive backing plates 40 of exhaust duct, and give up the gallium nitride-based epitaxial film of peeling off in the sacrificial region 29 20, and form independently with a plurality of unit components 281 device trough 28, have the light-emitting diode chip for backlight unit 60 of vertical stratification.Passing through gallium or other impurity that laser radiation produced on can be earlier with gallium nitride-based epitaxial film 20 before cutting process is handled cleans out.
The preparation method of the light-emitting diode chip for backlight unit of the embodiment of the invention is owing to be included in the step that gallium nitride-based epitaxial film 20 surface etchings go out many exhaust ducts 27, therefore the gas that is produced in the laser lift-off step can release from exhaust duct 27, reduce the possibility that distortion, crackle appear in light-emitting diode chip for backlight unit 60, improved the yield of light-emitting diode chip for backlight unit 60.
The movement locus that is appreciated that hot spot 51 in the laser lift-off step also can be not limited to the described form of present embodiment, for example can adopt the movement locus of " it " font or " bow " font.The shape of unit component 281 also can be circle or other polygons, and at this moment, the shape of hot spot 51 also can be done corresponding change.
In addition, those skilled in the art can also do other variation in spirit of the present invention, and certainly, these are included within the scope of protection of present invention according to the variation that spirit of the present invention is done.
Claims (10)
1. the preparation method of a light-emitting diode chip for backlight unit comprises the steps:
One sapphire substrate is provided;
On this sapphire substrate, form gallium nitride-based epitaxial film;
Go out many exhaust ducts at this gallium nitride-based epitaxial film surface etching, so that this gallium nitride-based epitaxial film is separated into a plurality of unit components;
Form a reflector on this gallium nitride-based epitaxial film surface;
This reflector is adhered to an electrically-conductive backing plate;
Use laser-stripping method that this gallium nitride-based epitaxial film is separated with this sapphire substrate, and the gas that produces when peeling off is released from these many exhaust ducts; And
Cut this heat-conducting substrate along this exhaust duct, to obtain the independent LED core sheet.
2. the preparation method of light-emitting diode chip for backlight unit as claimed in claim 1, it is characterized in that: the step that forms gallium nitride-based epitaxial film on this sapphire substrate is for adopting mocvd method be cascading p type semiconductor layer, active layer and n type semiconductor layer on this sapphire substrate, this p type semiconductor layer, this active layer and this n type semiconductor layer constitute this gallium nitride-based epitaxial film jointly.
3. the preparation method of light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that: the step that forms a reflector on this gallium nitride-based epitaxial film surface is that the using plasma chemical gaseous phase depositing process is in this gallium nitride-based epitaxial film surface deposition one deck reflector.
4. the preparation method of light-emitting diode chip for backlight unit as claimed in claim 1, it is characterized in that: going out many exhaust ducts at this gallium nitride-based epitaxial film surface etching, serves as to adopt the inductively coupled plasma method to go out this many exhaust ducts at this gallium nitride-based epitaxial film surface etching with the step that this gallium nitride-based epitaxial film is separated into a plurality of unit components.
5. the preparation method of light-emitting diode chip for backlight unit as claimed in claim 1, it is characterized in that: go out many exhaust ducts at this gallium nitride-based epitaxial film surface etching, this gallium nitride-based epitaxial film is separated in the step of a plurality of unit components, these many exhaust ducts are separated into device trough that is positioned at this gallium nitride-based epitaxial film middle part and the sacrificial region of peeling off that is positioned at this this gallium nitride-based epitaxial film edge with this gallium nitride-based epitaxial film, and these a plurality of unit components are separated by these many exhaust ducts by this device trough.
6. the preparation method of light-emitting diode chip for backlight unit as claimed in claim 5, it is characterized in that: the shape of these a plurality of unit components is identical, and these a plurality of unit components are along the bearing of trend proper alignment of this exhaust duct.
7. the preparation method of light-emitting diode chip for backlight unit as claimed in claim 6, it is characterized in that: use the laser lift-off technique method in this gallium nitride-based epitaxial film and this sapphire layer separation steps, the shape of the hot spot that employed laser beam irradiation forms on this gallium nitride-based epitaxial film is identical with the shape of each unit component, and the size of this hot spot is more than or equal to the size of this each unit component.
8. the preparation method of light-emitting diode chip for backlight unit as claimed in claim 7 is characterized in that: use the laser lift-off technique method to comprise this gallium nitride-based epitaxial film and this sapphire layer separation steps step by step following:
(a) make initial hot spot appear at this and peel off sacrificial region, and adjacent with a column unit device;
(b) this initial hot spot is moved along straight line, progress into each unit component that this device trough also scans this column unit device successively;
(c) when this hot spot passes this device trough and moves to this gallium nitride-based epitaxial film edge, stop emission of lasering beam;
(d) make new hot spot appear at this and peel off sacrificial region, and make new hot spot adjacent with another column unit device, this another column unit device and scanned this column unit device are adjacent;
(e) repeating step (b) all is scanned until all unit components to step (d).
9. the preparation method of light-emitting diode chip for backlight unit as claimed in claim 8 is characterized in that: when this hot spot moves, at least one this unit component is covered fully.
10. the preparation method of light-emitting diode chip for backlight unit as claimed in claim 8, it is characterized in that: this initial hot spot partly is positioned at the outside of this gallium nitride-based epitaxial film.
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| CN2009103127450A CN102117769A (en) | 2009-12-30 | 2009-12-30 | Manufacturing method of light-emitting diode chip |
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| CN2009103127450A CN102117769A (en) | 2009-12-30 | 2009-12-30 | Manufacturing method of light-emitting diode chip |
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Cited By (12)
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| CN102522318A (en) * | 2011-12-30 | 2012-06-27 | 厦门大学 | Self-splitting and transfer method for GaN-based epitaxial film |
| CN102664221A (en) * | 2012-05-18 | 2012-09-12 | 杭州士兰明芯科技有限公司 | Light-emitting diode (LED) substrate lift-off method |
| CN102896418A (en) * | 2011-07-27 | 2013-01-30 | 东芝机械株式会社 | Laser dicing method |
| CN103887377A (en) * | 2014-03-12 | 2014-06-25 | 江苏新广联科技股份有限公司 | Device process for reducing GaN-based vertical structure LED leakage currents |
| CN105023850A (en) * | 2015-07-21 | 2015-11-04 | 华进半导体封装先导技术研发中心有限公司 | Total-reflection laser bonding disassembling method |
| CN106711291A (en) * | 2015-11-13 | 2017-05-24 | 映瑞光电科技(上海)有限公司 | LED vertical chip structure and manufacturing method thereof |
| CN107017202A (en) * | 2015-12-04 | 2017-08-04 | 株式会社迪思科 | The processing method of chip |
| CN108807611A (en) * | 2018-06-19 | 2018-11-13 | 扬州乾照光电有限公司 | A kind of LED chip and production method |
| CN111048544A (en) * | 2017-12-05 | 2020-04-21 | 首尔半导体株式会社 | Method for manufacturing light emitting device and light emitting device |
| CN113764550A (en) * | 2021-09-07 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Transfer method for preventing LED chip from being damaged |
| CN113764551A (en) * | 2021-09-07 | 2021-12-07 | 东莞市中麒光电技术有限公司 | LED chip transfer method |
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- 2009-12-30 CN CN2009103127450A patent/CN102117769A/en active Pending
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| CN102896418A (en) * | 2011-07-27 | 2013-01-30 | 东芝机械株式会社 | Laser dicing method |
| CN102896418B (en) * | 2011-07-27 | 2015-05-13 | 东芝机械株式会社 | Laser dicing method |
| CN102522318B (en) * | 2011-12-30 | 2013-11-27 | 厦门大学 | Self-splitting and transfer method for GaN-based epitaxial film |
| CN102522318A (en) * | 2011-12-30 | 2012-06-27 | 厦门大学 | Self-splitting and transfer method for GaN-based epitaxial film |
| CN102664221B (en) * | 2012-05-18 | 2015-05-27 | 杭州士兰明芯科技有限公司 | Light-emitting diode (LED) substrate lift-off method |
| CN102664221A (en) * | 2012-05-18 | 2012-09-12 | 杭州士兰明芯科技有限公司 | Light-emitting diode (LED) substrate lift-off method |
| CN103887377B (en) * | 2014-03-12 | 2016-04-27 | 江苏新广联科技股份有限公司 | Reduce the device technology of GaN base vertical structure LED electric leakage |
| CN103887377A (en) * | 2014-03-12 | 2014-06-25 | 江苏新广联科技股份有限公司 | Device process for reducing GaN-based vertical structure LED leakage currents |
| CN105023850A (en) * | 2015-07-21 | 2015-11-04 | 华进半导体封装先导技术研发中心有限公司 | Total-reflection laser bonding disassembling method |
| CN105023850B (en) * | 2015-07-21 | 2018-02-23 | 华进半导体封装先导技术研发中心有限公司 | Total-reflection laser tears bonding method open |
| CN106711291A (en) * | 2015-11-13 | 2017-05-24 | 映瑞光电科技(上海)有限公司 | LED vertical chip structure and manufacturing method thereof |
| CN106711291B (en) * | 2015-11-13 | 2019-03-26 | 映瑞光电科技(上海)有限公司 | A kind of LED vertical chip structure and preparation method thereof |
| CN107017202A (en) * | 2015-12-04 | 2017-08-04 | 株式会社迪思科 | The processing method of chip |
| CN111048544A (en) * | 2017-12-05 | 2020-04-21 | 首尔半导体株式会社 | Method for manufacturing light emitting device and light emitting device |
| CN108807611A (en) * | 2018-06-19 | 2018-11-13 | 扬州乾照光电有限公司 | A kind of LED chip and production method |
| CN113764550A (en) * | 2021-09-07 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Transfer method for preventing LED chip from being damaged |
| CN113764551A (en) * | 2021-09-07 | 2021-12-07 | 东莞市中麒光电技术有限公司 | LED chip transfer method |
| CN116682912A (en) * | 2023-06-21 | 2023-09-01 | 惠科股份有限公司 | Light emitting chip, display panel, light emitting assembly and manufacturing method thereof |
| CN116682912B (en) * | 2023-06-21 | 2024-05-28 | 惠科股份有限公司 | Light emitting chip, display panel, light emitting assembly and manufacturing method thereof |
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Application publication date: 20110706 |