CN102117649B - 以内部时脉存取数据的数据存取装置与相关方法 - Google Patents
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- CN102117649B CN102117649B CN201010003241.3A CN201010003241A CN102117649B CN 102117649 B CN102117649 B CN 102117649B CN 201010003241 A CN201010003241 A CN 201010003241A CN 102117649 B CN102117649 B CN 102117649B
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CN201010003241.3A CN102117649B (zh) | 2010-01-04 | 2010-01-04 | 以内部时脉存取数据的数据存取装置与相关方法 |
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CN102117649A CN102117649A (zh) | 2011-07-06 |
CN102117649B true CN102117649B (zh) | 2014-01-15 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1577612A (zh) * | 2003-07-21 | 2005-02-09 | 三星电子株式会社 | 半导体存储装置和用于高频操作的模块 |
CN1947201A (zh) * | 2004-04-29 | 2007-04-11 | 皇家飞利浦电子股份有限公司 | 多倍数据速率ram存储器控制器 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1577612A (zh) * | 2003-07-21 | 2005-02-09 | 三星电子株式会社 | 半导体存储装置和用于高频操作的模块 |
CN1947201A (zh) * | 2004-04-29 | 2007-04-11 | 皇家飞利浦电子股份有限公司 | 多倍数据速率ram存储器控制器 |
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Effective date of registration: 20201030 Address after: No. 1, Xingzhu Road, Hsinchu Science Park, Taiwan, China Patentee after: MEDIATEK Inc. Address before: 518057, Guangdong, Shenzhen hi tech Zone, South District, science and technology, South ten road, Shenzhen Institute of Aerospace Science and technology innovation, C block, building 4 Patentee before: Mstar Semiconductor,Inc. Patentee before: MEDIATEK Inc. Effective date of registration: 20201030 Address after: 4 / F, block C, Shenzhen Aerospace Science and Technology Innovation Research Institute, science and technology south 10th Road, South District, Shenzhen high tech Zone, Guangdong Province Patentee after: Mstar Semiconductor,Inc. Patentee after: MEDIATEK Inc. Address before: 518057, Guangdong, Shenzhen hi tech Zone, South District, science and technology, South ten road, Shenzhen Institute of Aerospace Science and technology innovation, C block, building 4 Patentee before: Mstar Semiconductor,Inc. Patentee before: MSTAR SEMICONDUCTOR Inc. |