CN102117014A - 用于图案化半导体组件的光阻及半导体组件的制造方法 - Google Patents
用于图案化半导体组件的光阻及半导体组件的制造方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Abstract
本发明揭露一种用于图案化半导体组件的光阻及半导体组件的制造方法,其中所述用于图案化半导体组件的光阻包括聚合物以及光酸产生剂,其中此聚合物具有一骨架,此骨架为可断裂的,且此光酸产生剂不与此聚合物键结。其次,一种半导体组件的制造方法,其包括提供基材。材料层形成于前述基材上。光阻材料形成于前述材料层上。此光阻材料具有聚合物及光酸产生剂,且此聚合物包括一骨架。然后,前述光阻材料是经图案化而形成图案化光阻层。以前述图案化光阻层为掩膜,对前述材料层进行一制程。之后,对前述图案化光阻层经处理而使前述聚合物的骨架断裂。随后,移除前述图案化光阻层。
Description
技术领域
本发明是有关于一种半导体组件,特别是有关于一种用于图案化半导体组件的光阻材料及半导体组件的制造方法。
背景技术
半导体集成电路(integrated circuit;IC)业已历经快速成长。IC材料及设计在技术上的进步已产生好几个IC世代,而每一世代比前一世代的电路更小且更复杂。然而,这些进步已提高ICs处理及制造的复杂度,而且为了实现上述进步,需要在ICs处理及制造方面进行类似的发展。在IC进展的过程中,功能性密度(即每单位芯片面积的内连接组件的数量)已逐渐增加,而几何尺寸则缩减。
需要进行各种微影制程(photolithography process),以制造前述越来越小的ICs。微影制程中要使用光阻材料(photoresist material)。尤其光阻材料经常用于进行ICs的图案化,并于完成图案化制程后移除光阻。然而,现有的光阻材料及其移除的方法有些缺点。上述缺点包括会伤及光阻材料下方的各层,及/或无法完全移除光阻材料,会导致后续制程中的缺陷以及产率的下降。
因此,就欲达成的目的而言,现有的光阻材料虽已尚差强人意,但却无法完全满足每个层面。
发明内容
因此,本发明的一目的是在提供一种半导体组件的制造方法,其包括提供一基材;形成一材料层于前述基材上;形成一光阻材料于前述材料层上,其中此光阻材料具有一聚合物及一光酸产生剂,且此聚合物包括一骨架;对前述光阻材料进行一图案化步骤,以形成一图案化光阻层;以前述图案化光阻层为一掩膜,对前述材料层进行一制程;之后。对前述图案化光阻层进行一处理制程,使前述聚合物的骨架断裂;以及移除前述图案化光阻层。
其次,本发明的另一目的是在提供一种用于图案化半导体组件的光阻,其包括一光酸产生剂以及一聚合物,其中此聚合物具有如式(I)所示的一化学式:
其中Z可自(C)x断裂,且其中Z包括羧酸基、氧基、磷基、硫基、硫代基、磺基、砜基、酰胺基以及亚胺基之一者;R1与R2的每一者包括具有一碳链的氢基、氢氧基、卤素基、芳香族碳环基、烷基、烷氧基、含氟烷基以及含氟烷氧基之一者,此碳链具有一数量的碳原子,且此数量为1至12;以及x为1至6,且y为8至40。
应用本发明的用于图案化半导体组件的光阻及半导体组件的制造方法,其光阻层因具有骨架可断裂的聚合物,当光阻层经图案化及处理制程后,前述光阻层的聚合物骨架可断裂,使得图案化光阻层更容易被移除,且又不伤及光阻材料下方的各层,进而减少后续制程中的缺陷并提高产率。
附图说明
为让本发明的上述和其它目的、特征、优点与实施例能更明显易懂,所附附图的详细说明如下:
图1是根据本发明的各种观点说明半导体组件的制造方法的流程图;以及
图2至图6是根据图1的方法说明不同制程阶段的半导体组件35的剖面示意图。
【主要组件符号说明】
11:方法
13:提供基材的步骤
15:形成材料层于基材上的步骤
17:形成光阻材料于前述材料层上,此光阻材料具有聚合物,且此聚合物具有一骨架的步骤
19:图案化前述光阻材料,以形成一图案化光阻层的步骤
21:以前述图案化光阻层为一掩膜,对前述材料层进行一制程的步骤
25:移除前述图案化光阻层的步骤
35:半导体组件
40:基材
50:材料层
50A:图案化材料层
55:厚度
60:光阻材料
60A:图案化光阻层
70:微影制程
80:开口
85:边缘
90:制程
100:处理制程
110:光阻移除制程
120:边缘区
具体实施方式
可以理解的是,以下揭露内容提供许多不同的实施例或例示,以实施本发明的不同特征。以下所述的构件与排列的特定例示是用以简化本揭露内容。当然,这些例示仅为举例说明,并非用以限制本发明。再者,举例而言,说明书中,第一特征形成于第二特征上或其上方,可能包括第一特征以直接接触的方式形成于第二特征上的实施例,也可能包括第一特征与第二特征之间形成其它额外特征、以至于第一特征以非直接接触的方式形成于第二特征上的实施例。为了简要清楚说明,不同特征是以不同尺寸任意绘制。
请参阅图1,其是根据本揭露内容的各种观点说明半导体组件的制造方法11的流程图。此方法11是自方块13开始,其是提供一基材。接着,此方法11继续进行至方块15,其是形成一材料层于前述基材上。之后,此方法11继续进行至方块17,其是形成光阻材料于前述材料层上。此光阻材料具有一聚合物及一光酸产生剂,其中此聚合物具有一骨架。然后,此方法11继续进行至方块19,其是对前述光阻材料进行一图案化步骤,以形成一图案化光阻层。随后,此方法11继续进行至方块21,其是对前述材料层进行一制程。此制程是以上述图案化光阻层为一掩膜。尔后,此方法11继续进行至方块23,其是对前述图案化光阻层进行一处理制程,使前述聚合物的骨架断裂。然后,此方法11继续进行至方块25,其是移除前述图案化光阻层。
请参阅图2至图6,其是根据图1的方法说明不同制程阶段的半导体组件35的剖面示意图。此半导体组件35可包括集成电路(IC)芯片、系统单芯片(system-on-chip;SoC)组件或上述的一部分,且此半导体组件35可包括各种被动及主动的微电子构件,例如电阻、电容、电感(inductors)、二极管、金属氧化半导体场效晶体管(metal oxide semiconductor field effect transistor;MOSFET)、互补式金属氧化物半导体(complementary metal oxide semiconductor;CMOS)晶体管、双载子接合晶体管(bipolar junction transistor;BJT)、侧向扩散式金氧半导体(laterally diffused MOS;LDMOS)晶体管、高功率金氧半导体(high power MOS)晶体管或其它型式的晶体管。
请参阅图2,半导体组件35包括一基材40。在一实施例中,基材40可实质上为导体或半导体,且基材40的电阻小于约1000欧姆-米(ohm-meter)。在此实施例中,基材40包括下式(III):
MXA (III)
其中M为金属,例如钛(Ti)、铝(Al)、钴(Co)、铷(Ru)、钨(W)或钽(Ta);X为氮(N)、硫(S)、硒(Se)、氧(O)或硅(Si),而A则为约0.4至约2.5。在另一实施例中,基材40包括介电系数介于约1至约40的介电材料。在此实施例中,基材40包括下式(IV):
MXB (IV)
其中M为金属或半导电(semi-conductive)材料,例如硅(Si)、铝(Al)、铪(Hf)或镧(La);X为氮(N)或氧(O),而B则为约0.4至约2.5。再者,基材40可包括磊晶(epitaxial;epi)层,基材40可被应变(strained)以增加其效能,且基材40可包括绝缘层覆硅(silicon-on-insulator;SOI)的结构。
材料层50可形成于基材40上。此材料层50的厚度55是小于约100埃(angstroms;)或10纳米(nanometers;nm)。在一实施例中,材料层50包括一介电材料,例如氧化硅或氮化硅。在另一实施例中,材料层50包括金属。在又一实施例中,材料层50包括半导体材料。可以理解的是,在其它实施例中,基材40以及材料层50的每一者可包括其它适合的材料组成物。
请再参阅图2,光阻材料(photoresist material)60形成于材料层50上。在图2所示的实施例中,光阻材料60包括正光阻(positive photoresist),不过可以理解的是,在其它的实施例中,光阻材料60可以是负光阻(negative photoresist)。光阻材料60是利用旋涂(spin-coating)制程形成。光阻材料60包括一聚合物以及一光酸产生剂(photo acid generator;PAG)。前述的光酸产生剂并不与聚合物键结。在后续微影制程(详见后述)中,光子引起光酸产生剂的分解。结果,产生少量的酸,进一步引起光阻材料60中一连串的化学转化反应(chemical transformations)。光阻材料60也可选择性包括一猝灭剂(quencher),其中此猝灭剂是设于光阻材料60内,以改善关键尺寸(critical dimension;CD)的控制。光阻材料60还可包括一发色基(chromophore)材料。
前述光阻材料60的聚合物具有如式(I)所示的一化学式:
(C)x为多个碳原子以化学键结在一起的长链。因此,(C)x亦指碳链。x为数值变数,是指键结于碳链上的碳原子的数量。举例而言,假设x为4,则碳链可表示为C-C-C-C,以代表化学键结在一起的4个碳原子。在一实施例中,x为约1至约6。单一碳原子的长度(即线性长度)为约0.1纳米(nanometer;nm),故碳链的总长度为约0.1纳米至约0.6纳米。
Z代表与前述碳链化学键结的一化学基,因此,Z亦指连接基。在一实施例中,Z包括羧酸(carboxylic)基、氧基、磷基、硫基、硫代(thio)基、磺(sulfoxide)基、砜(sulfone)基、酰胺(amide)基以及亚胺(imine)基之一者。
前述碳链(C)x与连接基Z的键结结构可重复y次,以形成聚合物的骨架。举例而言,假设y为3而x为4,则聚合物的骨架可表示为C-C-C-C-Z-C-C-C-C-Z-C-C-C-C-Z。换言之,此聚合物的骨架包括3个实质相同并连接在一起的片段,其中每个片段包括与碳链(C)4键结的连接基Z,且碳链(C)4具有化学键结在一起的4个碳原子。在一实施例中,y为约8至约40。
虽然R1与R2并不属于前述聚合物的骨架的一部分,不过R1与R2的每一者是代表一化学基,且此化学基与前述碳链(C)x连接。因此,R1与R2亦指化学支链。在一实施例中,R1与R2的每一者包括氢基、氢氧基、卤素基、芳香族碳环(aromatic carbon ring)基、非芳香族碳环(non-aromatic carbon ring)基、烷基(alkyl)、烷氧基(alkoxyl)、含氟烷基(fluoroalkyl)以及含氟烷氧基(fluoroalkoxyl)之一者。前述的烷基、烷氧基、含氟烷基以及含氟烷氧基的每一者具有一碳链,此碳链具有一数量的碳原子,且此数量为1至12。前述的烷基、烷氧基、含氟烷基以及含氟烷氧基的每一者为直链或环状。在其它实施例中,R1与R2可包括氯(Cl)、溴(Br)、二氧化氮(NO2)、三氧化硫(SO3)、氢(H)、氰(CN)、(NCO)、(OCN)、二氧化碳(CO2)、羟基(OH)、OR*、OC(O)CR*、SR、SO2N(R*)2、SO2R、SOR、OC(O)R*、C(O)OR*、C(O)R*、Si(OR*)3、Si(R*)3以及环氧基(epoxylgroups),其中R*代表氢、烷基、烯基或炔基。前述的烷基、烯基或炔基的每一者可具有一碳链,其中此碳链具有1至12个碳原子,且此碳链可具有支链(branched)或不具支链(unbranched)、环状或非环状、以及饱和(saturated)或不饱和(unsaturated)。
外界能量施加于前述的光阻材料60(并因而施加于前述聚合物)时,前述的连接基Z可自碳链(C)x断裂(或分离)。易言之,连接基Z与碳链(C)x之间的化学键结可经外界能量而破坏。在一实施例中,外界能量为一化学品。此化学品可为酸类,例如盐酸、硫酸、硝酸及磷酸。此化学品亦可为碱类,例如氨(ammonia)或四甲基氢氧化铵(tetramethylammonium hydroxide;TMAH)。另外,此化学品可为氧化剂、还原剂或界面活性剂。在另一实施例中,外界能量为热能。在此例子中,前述的聚合物是以约22℃至约250℃的温度进行加热。在又一实施例中,外界能量为电磁辐射。在此例子中,前述的聚合物是利用波长低于250纳米的电磁波进行曝光。
在另一实施例中,前述的聚合物具有如式(II)所示的一化学式:
在此实施例中,聚合物骨架包括一化学基Rf,其中此Rf是同时连接至碳链(C)x与连接基Z。在一实施例中,化学基Rf包括芳香族碳环基及非芳香族碳环基、烷基、烷氧基、含氟烷基以及含氟烷氧基之一者。烷基、烷氧基、含氟烷基以及含氟烷氧基的每一者具有一碳链,其中此碳链具有数量为1至4的碳原子。
请参阅图3,对光阻材料60进行一微影制程70,以形成图案化光阻层(patterned photoresist layer)60A。在一实施例中,微影制程70包括借用光源以及光罩(photomask),使光阻材料60的一预设区域进行曝光,而光阻材料60的其它区域则受到防护。在曝光以前,光阻材料60具有低极性,可溶解于有机溶剂中,例如丙二醇甲醚(propylene glycol monomethyl ether;PGME)或丙二醇甲醚醋酸酯(propylene glycol monomethyl ether acetate;PGMEA)。经曝光后,光阻材料60被曝光的区域则产生化学反应,且此些经曝光的区域在曝光后会转变为高极性。高极性的光阻材料60可溶解于碱性材料,例如四甲基氢氧化铵(TMAH)。因此,接下来经曝光后烘烤(post exposure bake;PEB)制程后,在显影制程中,可利用四甲基氢氧化铵为显影溶液,移除前述经曝光的区域。
在图3所示的实施例中,移除光阻材料60被曝光的区域后,光阻材料60形成一开口80,而残留的未曝光的光阻材料就称为图案化光阻层60A。开口80的边缘85是指光阻材料60的曝光区域与未曝光区域之间的预设边界或界线。然而,由于微影制程70在技术上的局限,边缘85可能不是轮廓明确或界限清楚的,事实上,从曝光区域过渡至未曝光区域可以是稍微和缓的。换言之,边缘85可不具有清楚或明确的轮廓。不过这会导致后续制程移除图案化光阻层60A的困难度,此于后文详述。
请参阅图4,对半导体组件35进行一制程90。在一实施例中,制程90为一蚀刻制程。制程90为湿式蚀刻制程,其是利用蚀刻化学品,以蚀刻前述材料层50。为了避免伤及基材40,并不使用例如氢氟酸或磷酸的腐蚀性强的蚀刻化学品而进行制程90。反之,谨慎选用腐蚀性较温和的蚀刻化学品而进行制程90。制程90亦可使用弱干式蚀刻制程(weak dry etching process),其是利用腐蚀性弱的电浆气体,例如四氟化碳、六氟化硫或三氟化氮,以蚀刻前述材料层50。
在任何例子中,前述材料层50与图案化光阻层60A之间的蚀刻选择性,是指材料层50与图案化光阻层60A面临蚀刻化学品时,二者具有不同的蚀刻速率。图案化光阻层60A在蚀刻制程中是作为掩膜(mask)。在蚀刻制程结束时,图案化光阻层60A的影像图案就转移到材料层50与图案化材料层50A。换言之,图案化光阻层60A是作为掩膜,以延伸开口80穿过材料层50。
在另一实施例中,制程90是植入制程。在此例子中,例如硼、砷或磷的掺质是穿过开口80而植入至材料层50,以于材料层50中形成掺杂区。图案化光阻层60A是作为掩膜,以于植入制程时保护下方材料层50的前述区域。为了简化之故,此实施例暂不赘述。
请参阅图5,对图案化光阻层60A进行一处理制程100,以转变前述聚合物的骨架结构,特别是使聚合物的骨架断裂。在一实施例中,处理制程100包括使图案化光阻层60A进行一化学制程。在此化学制程中,图案化光阻层60A是暴露于酸类,例如盐酸、硫酸、硝酸、氢氟酸或磷酸。暴露于酸中可使连接基Z自碳链断裂或分离,因而使聚合物的骨架断裂。图案化光阻层60A亦可暴露于例如氨或四甲基氢氧化铵(TMAH)的碱类、例如过氧化氢或硝酸的氧化剂、例如聚金属烷氧化物(poly alkyoxide)或含氟烷基盐(fluoroalkyl salts)的界面活性剂、或还原剂。化学制程的期间可以调整,以控制前述骨架断裂的程度。
在另一实施例中,前述处理制程100包括热制程。图案化光阻层60A可通过热制程而加热至一预定温度范围。在一实施例中,图案化光阻层60A加热至约22℃至约250℃的范围。热制程会产生酸类,其中酸类是通过使连接基Z自碳链断裂或其它方式,而使前述聚合物的骨架断裂。热制程的期间及温度皆可调整,以产生预定量及预定类型的酸类,以使前述聚合物的骨架断裂。
在又一实施例中,前述处理制程100包括一电磁辐射制程。图案化光阻层60A是于波长低于250纳米的电磁波进行曝光。电磁波的波长以及电磁辐射制程的期间皆可调整,藉使电磁波的曝光可以产生预定量及预定类型的酸类,以使前述聚合物之骨架断裂。
请参阅图6,对半导体组件35进行光阻移除制程110(亦可称为剥除制程),以移除图案化光阻层60A。为了说明之故,已移除的图案化光阻层60A是以虚线绘示。已知移除光阻的方法可包括利用干式等离子气体或腐蚀溶液(例如硫酸或过氧化氢)剥除光阻,或者利用有机溶剂溶解光阻。然而,上述已习知光阻移除制程的每一者都具有缺点。倘若使用干式等离子气体或腐蚀溶液,在光阻移除制程中,可能会使光阻下方的各层(例如基材40或材料层50)受损。倘若使用有机溶剂,可能会造成光阻移除不完全,尤其靠近图案化光阻层60A的边缘区120是邻近于开口80的边缘85。此于后文详述。
在处理制程100(图5)之前,图案化光阻层60A的聚合物骨架可具有多齿状(multidendate)的形状。由于螯合效应(chelate effect)所致,聚合物可强力附着至下方层,包括材料层50A。前述强力附着力使得图案化光阻层60A难以从下方层移除。在边缘区120的困难度更大。诚如图3所述,图案化光阻层60的曝光区域具有高极性,而未曝光区域具有低极性。其次,微影制程70在技术上的局限不太能够在图案化光阻层60的曝光区域与未曝光区域之间产生明确的界线。结果,边缘区120的光阻材料的极性高低就不明显,反而是具有过渡态的极性,这意味着,介于高极性与低极性之间的某一点。可以理解的是,高极性的光阻可溶解于例如四甲基氢氧化铵(TMAH)的碱性溶液,而低极性的光阻则可溶解于例如丙二醇甲醚(PGME)及丙二醇甲醚醋酸酯(PGMEA)的有机溶剂中。然而,由于边缘区120的光阻材料并非高极性亦非低极性,因此其是半溶解(semi-soluble)于碱性溶液或有机溶剂中。故利用碱性溶液或有机溶剂,并不容易移除边缘区120的光阻材料。图案化光阻层60A与下方层之间的强力附着使得问题更加恶化,并增加移除边缘区120的光阻材料的困难度。据此,如上所论,即使进行已知光阻剥除制程之后,光阻残留物往往会残留(特别是在边缘区120)。
相较于已知的光阻移除方法,本发明提供的优点之一,包括更容易且更广泛移除光阻,可以理解的是,不同实施例可提供不同的优点,且并没有特定的优点是所有的实施例所必需具备的。承上所述,处理制程100使连接基Z自碳链分离,进而使聚合物的骨架断裂或分开。所以,聚合物骨架在处理制程100之后不再具有多齿状,而是单齿状(monodendate)的形状,因此就没有螯合效应。结果,聚合物与下方各层之间的附着力就减少或变弱。在一些例子中,前述的附着力可减少数百倍甚或数万倍。由于附着力减少许多,图案化光阻层60(包括边缘区120的光阻)就更容易通过例如丙二醇甲醚(PGME)或丙二醇甲醚醋酸酯(PGMEA)的有机溶剂轻易移除。再者,由于不使用干式等离子气体或腐蚀溶液,图案化光阻层60下方的各层,例如基材40,就不会受到不必要的伤害。事实上,以PGME或PGMEA的有机溶剂处理基材40会较佳。在进行光阻移除制程110之后,并没有光阻残留物残留。
可以理解的是,纵然本发明的图2至图6说明将图案化光阻层60A的影像图案转移至下方的材料层50,不过在其它实施例中,并不需要材料层50,基材40本身可通过图案化光阻层60A而加以图案化。
在另一实施例中,光阻处理制程100可应用至已知的光阻材料。然而,由于已知的光阻缺乏光阻材料60(图2)具有的可断裂的聚合物骨架,因此在进行光阻处理制程100之后,已知光阻仍然强力附着于下方各层。因此,在光阻移除制程110中,并不是采用有机溶剂,而是利用例如四甲基氢氧化铵(TMAH)的碱性溶液,以移除已知的光阻。但利用碱性溶液移除光阻的缺点可能在于,碱性溶液也会腐蚀或破坏光阻下方的各图案层。
以上已概述数个实施例的特征,可让本发明所属技术领域的技术人员更加了解本发明。本发明所属技术领域的技术人员应可理解,其可轻易利用本揭露内容作为基础,以设计或修改其它制程或结构,而实现与此处所述的实施例所述相同的目的及/或达成相同的优点。故此,本发明所属技术领域的技术人员应可理解,上述均等的架构并不脱离本发明的精神和范围,且此等人员在不脱离本发明的精神和范围下,可作各种的更动、替换、与润饰,因此本发明的保护范围当视权利要求书所界定的范围为准。
Claims (10)
1.一种半导体组件的制造方法,其特征在于,至少包含:
提供一基材;
形成一材料层于该基材上;
形成一光阻材料于该材料层上,其中该光阻材料具有一聚合物及一光酸产生剂,且该聚合物包括一骨架;
对该光阻材料进行一图案化步骤,以形成一图案化光阻层;
以该图案化光阻层为一掩膜,对该材料层进行一制程;
对该图案化光阻层进行一处理制程,使该聚合物的该骨架断裂;以及
移除该图案化光阻层。
2.根据权利要求1所述的半导体组件的制造方法,其特征在于,在形成该光阻材料的步骤中,该聚合物的该骨架在进行该处理制程之前具有一多齿状结构,该聚合物的该骨架在进行该处理制程之后具有一单齿状结构,且该处理制程包括利用一化学制程、一热制程以及一辐射制程,以处理该图案化光阻层。
3.根据权利要求1所述的半导体组件的制造方法,其特征在于:
该化学制程包括对该图案化光阻层施以盐酸、硫酸、硝酸、氢氟酸以及磷酸之一者;
该热制程包括对该图案化光阻层以22℃至250℃的温度进行加热;以及
该辐射制程包括使该图案化光阻层于波长低于250纳米的一电磁波进行曝光。
4.根据权利要求1所述的半导体组件的制造方法,其特征在于,移除该图案化光阻层的步骤包括利用一有机溶剂溶解该图案化光阻层。
5.根据权利要求1所述的半导体组件的制造方法,其特征在于,进行该制程包括进行以下之一者:
蚀刻该材料层;以及
植入多个掺质于该材料层中。
6.一种用于图案化半导体组件的光阻,其特征在于,至少包含:
一光酸产生剂;以及
一聚合物,其中该聚合物具有如式(I)所示的一化学式:
其中该Z可自该(C)x断裂,且其中:
该Z包括羧酸基、氧基、磷基、硫基、硫代基、磺基、砜基、酰胺基以及亚胺基之一者;
该R1与该R2的每一者包括具有一碳链的氢基、氢氧基、卤素基、芳香族碳环基、烷基、烷氧基、含氟烷基以及含氟烷氧基之一者,该碳链具有一数量的碳原子,且该数量为1至12;以及
该x为1至6,且该y为8至40。
8.根据权利要求6所述的用于图案化半导体组件的光阻,其特征在于,该Z经暴露于酸类、热能以及电磁辐射之一者时,该Z自该(C)x断裂。
9.根据权利要求6所述的用于图案化半导体组件的光阻,其特征在于,该光酸产生剂不与该聚合物键结。
10.根据权利要求7所述的用于图案化半导体组件的光阻,其特征在于,该Z经暴露于酸类、热能以及电磁辐射之一者时,该Z自该(C)x断裂。
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CN113314402A (zh) * | 2020-02-27 | 2021-08-27 | 台湾积体电路制造股份有限公司 | 光阻剂组成物与制造半导体装置的方法 |
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CN108231548A (zh) * | 2016-12-15 | 2018-06-29 | 台湾积体电路制造股份有限公司 | 半导体装置的制作方法 |
CN108231548B (zh) * | 2016-12-15 | 2021-11-30 | 台湾积体电路制造股份有限公司 | 半导体装置的制作方法 |
CN113314402A (zh) * | 2020-02-27 | 2021-08-27 | 台湾积体电路制造股份有限公司 | 光阻剂组成物与制造半导体装置的方法 |
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