CN102116785A - Device and method for analyzing static transient voltage drop - Google Patents
Device and method for analyzing static transient voltage drop Download PDFInfo
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- CN102116785A CN102116785A CN 200910266844 CN200910266844A CN102116785A CN 102116785 A CN102116785 A CN 102116785A CN 200910266844 CN200910266844 CN 200910266844 CN 200910266844 A CN200910266844 A CN 200910266844A CN 102116785 A CN102116785 A CN 102116785A
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Abstract
The invention discloses a device for analyzing static transient voltage drop, which is applied to a multi-threshold complementary metal oxide semiconductor transistor. The device for analyzing static transient voltage drop comprises an estimating module, a processing module and a measuring module. The estimating module estimates a transient voltage drop tolerance value according to the characteristics of the transient voltage drop of the multi-threshold complementary metal oxide semiconductor transistor. The processing module, according to the transient voltage drop tolerance value, selects a corresponding simulated metal layer from a plurality of candidate simulated metal layers, and adds the simulated metal layer to the multi-threshold complementary metal oxide semiconductor transistor. The measuring module measures a transient voltage drop of the simulated metal layer added to the multi-threshold complementary metal oxide semiconductor transistor. The transient voltage drop resulting from the measurement is actually the static transient voltage drop of the multi-threshold complementary metal oxide semiconductor transistor.
Description
[technical field]
The present invention is relevant with power supply grid-control (power gating) technology, especially, about a kind of needn't be by expensive special analysis instrument can (Multi-Threshold Complementary Metal-Oxide-Semiconductor, MTCMOS) transistor carries out static transient voltage and falls that analytical equipment falls in static transient voltage that (static IR drop) measure and analytical approach falls in static transient voltage to the many threshold values CMOS (Complementary Metal Oxide Semiconductor) in the power supply grid controlling circuit.
[background technology]
Along with special IC (Application Specific Integrated Circuit, ASIC) and system single chip (System on Chip, SoC) gradually adopt IC processing procedure below 0.13 micron, in order to produce the littler and speed of volume IC faster, wafer foundry begins to adopt new material and process technique, for example littler processing procedure yardstick, adjustable threshold value (scaled threshold) and nonadjustable voltage (unscaled voltage) etc., but also produce more and more serious leakage current (leakage current) and quiescent dissipation problems such as (static power consumption) thereupon.
Especially for 90 nanometers and the IC processing procedure below 65 nanometers, power management (powermanagement) has become considerable Consideration of IC deviser.For effectively in response to the problem of power management, the IC deviser adopts various technology to reduce the quiescent dissipation of the circuit of its design, for example many threshold values (multi-thre shold) design, multivoltage (multi-voltage) design, clock pulse grid-control (clock gating) and power supply grid-control (power gating) etc.
Wherein, in the power supply grid controlling circuit of mobile communications device, standing many threshold values CMOS (Complementary Metal Oxide Semiconductor) (MTCMOS) transistor formed by PMOS assembly or NMOS assembly that is equipped with.Many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor reaches the effect of power supply grid-control by the mode that will wait supply voltage (constant VDD) and Switching power voltage (switchedVDD) to separate, use and close the module that temporarily can not use its function in the mobile communications device, its quiescent dissipation can significantly be reduced.
Please refer to Figure 1A and Figure 1B, Figure 1A and Figure 1B illustrate the synoptic diagram of two kinds of different general power supply grid controlling circuits respectively.Shown in Figure 1A and Figure 1B, power supply grid controlling circuit 1 comprises PMOS assembly 10 and power supply grid controlling circuit 11 ' comprises PMOS assembly 11 and 12, and supply voltage (constantVDD) and Switching power voltage (switched VDD) such as has respectively.
Also please refer to Fig. 2 A and Fig. 2 B, Fig. 2 A and Fig. 2 B illustrate the circuit layout synoptic diagram of general power supply grid controlling circuit respectively and along the sectional view of the resulting many threshold values CMOS (Complementary Metal Oxide Semiconductor) of the dotted line L transistor 20 among Fig. 2 A, the framework that is shown with PMOS switch VDD is an example, shown in Fig. 2 A and Fig. 2 B.Yet, can obviously find out from Fig. 2 B, because many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 20 reaches the effect of power supply grid-control by the mode that will wait supply voltage (constant VDD) and Switching power voltage (switched VDD) to separate, that is to say, there is no any relation that couples Deng supply voltage (constant VDD) and Switching power voltage (switched VDD), also thereby the measurement that causes the static transient voltage of many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 20 to fall the quite difficulty that becomes.
Though present electronics designs (Electronic Design Automation automatically, EDA) software also can be analyzed the transistorized static transient voltage of many threshold values CMOS (Complementary Metal Oxide Semiconductor) by the analysis software of some particular design and falls, but its cost of purchasing is considerable, even can reach the spectrum of millions of New Taiwan Dollar, no matter for IC deviser or IC production firm, all are white elephants very.
Therefore, main category of the present invention is to provide a kind of static transient voltage to fall analytical equipment and analytical approach falls in static transient voltage, to address the above problem.
[summary of the invention]
First specific embodiment according to the present invention is that analytical equipment falls in a kind of static transient voltage.In this embodiment, this static state transient voltage falls analytical equipment and is applied to the CMOS (Complementary Metal Oxide Semiconductor) of threshold value more than a transistor.This static state transient voltage falls analytical equipment and comprises an estimation block, a processing module and a measurement module.This estimation block is in order to estimate a transient state voltage drop tolerance value according to the transistorized transient voltage drop characteristic of this many threshold values CMOS (Complementary Metal Oxide Semiconductor).This processing module is chosen a corresponding emulation metal level in order to fall the tolerance value according to this transient voltage in a plurality of candidate's emulation metal levels, and this emulation metal level is added in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor.This measurement module is in order to measure a transient state voltage drop that has been added to this emulation metal level in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor.Wherein, this transient voltage of measuring of this measurement module falls and is the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) in fact and falls.
Second specific embodiment according to the present invention is that analytical approach falls in a kind of static transient voltage.In this embodiment, this static state transient voltage falls analytical approach and is applied to the CMOS (Complementary Metal Oxide Semiconductor) of threshold value more than a transistor.At first, this method estimates a transient state voltage drop tolerance value according to the transistorized transient voltage drop characteristic of this many threshold values CMOS (Complementary Metal Oxide Semiconductor); Then, this method is fallen the tolerance value according to this transient voltage choose a corresponding emulation metal level in a plurality of candidate's emulation metal level; Then, this method is added to this emulation metal level in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor; Afterwards, this method measures a transient state voltage drop that has been added to this emulation metal level in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor.Wherein, the transient voltage of this measurement gained falls and is the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) in fact and falls.
Compared to prior art, static transient voltage according to the present invention falls analytical equipment and static transient voltage and falls after analytical approach estimates the transistorized transient state voltage drop tolerance value of many threshold values CMOS (Complementary Metal Oxide Semiconductor) to be measured by common SPICE simulated program earlier, to be added in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor corresponding to the emulation metal level that the tolerance value falls in this transient voltage again, make separate originally wait supply voltage (constant VDD) and Switching power voltage (switched VDD) to be coupled in to form short circuit together by this emulation metal level, and then measure the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) exactly by this emulation metal level and fall.
Therefore, static transient voltage proposed by the invention falls analytical equipment and static transient voltage and falls analytical approach and only need adopt general eda software can measure the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) exactly to fall, so can avoid needing in the prior art to purchase the required extra huge expense of analysis software of some particular design.
Can be about the advantages and spirit of the present invention by following detailed Description Of The Invention and appended graphic being further understood.
[description of drawings]
Figure 1A and Figure 1B illustrate the synoptic diagram of two kinds of different general power supply grid controlling circuits respectively.
Fig. 2 A and Fig. 2 B illustrate the circuit layout synoptic diagram of general power supply grid controlling circuit respectively and along the transistorized sectional view of the resulting many threshold values CMOS (Complementary Metal Oxide Semiconductor) of the dotted line L among Fig. 2 A.
Fig. 3 illustrates the functional block diagram of falling analytical equipment according to the static transient voltage of first specific embodiment of the present invention.
Fig. 4 illustrates by the emulation of SPICE simulated program and obtains the transistorized I of many threshold values CMOS (Complementary Metal Oxide Semiconductor)
DS-V
DSPerformance diagram.
The transistorized top view of many threshold values CMOS (Complementary Metal Oxide Semiconductor) that Fig. 5 A and Fig. 5 B illustrate the many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor that does not add the emulation metal level as yet respectively and added the emulation metal level.
The transistorized cut-open view of many threshold values CMOS (Complementary Metal Oxide Semiconductor) that Fig. 6 A and Fig. 6 B illustrate the many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor that does not add the emulation metal level as yet respectively and added the emulation metal level.
Fig. 7 A and Fig. 7 B illustrate the net list program code before the power supply that does not change power pin as yet and coupled respectively and have changed power pin the net list program code behind the power supply that is coupled.
Fig. 8 illustrates electric current and flow to the transistorized synoptic diagram of many threshold values CMOS (Complementary Metal Oxide Semiconductor) by power source pad.
Fig. 9 illustrates the process flow diagram that falls analytical approach according to the static transient voltage of second specific embodiment of the present invention.
[primary clustering symbol description]
S10～S14: process step
1,1 ', 2,6: the power supply grid controlling circuit
10～12,20: many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor
3: analytical equipment 30 falls in static transient voltage: estimation block
32: processing module 34: the change module
36: measure module D: drain
S: source electrode G: grid
L: profile line M: metal level
P: power source pad std cell: standard electronic module
5 ': the many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor that adds metal level
[embodiment]
First specific embodiment according to the present invention is that analytical equipment falls in a kind of static transient voltage.In this embodiment, in this embodiment, this static state transient voltage falls analytical equipment and falls in order to the transistorized static transient voltage of the CMOS (Complementary Metal Oxide Semiconductor) of threshold value more than that analysis is arranged in the power supply grid controlling circuit, and this power supply grid controlling circuit can be arranged in a mobile communications device or other electronic installation, in order to close the module that temporarily can not use its function in this mobile communications device or other electronic installation, for example communication module, short message module or game module, use and reduce its whole total power consumption, but not as limit.
Please refer to Fig. 3, Fig. 3 illustrates the functional block diagram that analytical equipment falls in this static state transient voltage.As shown in Figure 3, static transient voltage falls analytical equipment 3 and comprises estimation block 30, processing module 32, change module 34 and measure module 36.Wherein, estimation block 30 is coupled to processing module 32; Processing module 32 is coupled to change module 34; Change module 34 is coupled to and measures module 36.Next, each module and the function thereof of falling analytical equipment 3 with regard to static transient voltage respectively is introduced.
In this embodiment, estimation block 30 is in order to estimate a transient state voltage drop tolerance value according to the transistorized transient voltage drop characteristic of this many threshold values CMOS (Complementary Metal Oxide Semiconductor).In fact, estimation block 30 can carry out general SPICE simulated program or other simulated program carries out the emulation of the transistorized transient voltage drop characteristic of this many threshold values CMOS (Complementary Metal Oxide Semiconductor), and use to estimate and fall the tolerance value, but not as limit corresponding to transistorized this transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor).
Then, processing module 32 is chosen a corresponding emulation metal level in order to fall the tolerance value according to this transient voltage in a plurality of candidate's emulation metal levels.In practical application, these a plurality of candidate's emulation metal levels with and corresponding transient voltage fall the tolerance value and can be recorded in advance in the look-up table, and record these a plurality of candidate's emulation metal levels size and resistance thereof separately, but not as limit.
For example, estimation block 30 can be carried out general SPICE simulated program emulation and obtain the transistorized I of this many threshold values CMOS (Complementary Metal Oxide Semiconductor)
DS-V
DSPerformance diagram, as shown in Figure 4.According to V=IR as can be known, as grid voltage V
GIn the time of fixedly, resistance R=V
DS/ I
DS, that is the inverse of the dotted line slope among Fig. 4.Suppose that it is 3% that tolerance value Δ V falls in the transistorized transient voltage of estimation block 30 resulting these many threshold values CMOS (Complementary Metal Oxide Semiconductor), then this method can further be chosen the emulation metal level M that falls tolerance value 3% corresponding to transient voltage in numerous candidate's emulation metal levels that look-up table write down, and the width that can be obtained emulation metal level M by the following information that look-up table write down is that 0.06 micron and its resistance are 0.067 ohm.
The table of comparisons
| The tolerance value falls in transient voltage | Emulation metal level kind | The emulation metal layer width | Emulation |
| 1％ | N | 0.02 micron | 0.027 |
| 3％ | M | 0.06 micron | 0.067 |
| 5％ | N | 0.09 micron | 0.101 ohm |
| 7％ | M | 0.11 micron | 0.122 ohm |
Then, processing module 32 further is added to this emulation metal level in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor.Please refer to Fig. 5 A and Fig. 5 B, Fig. 5 A and Fig. 5 B illustrate the top view of many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 that does not add emulation metal level M as yet and the many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 ' that has added emulation metal level M respectively.
Shown in Fig. 5 A, many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 comprises Switching power voltage (switched VDD), Deng supply voltage (constant VDD), and connect ground voltage (VSS) altogether, wherein Switching power voltage and etc. do not link to each other each other between the supply voltage.Under general pattern, supply voltage such as have only can connect with system voltage source, then be to wait the static transient voltage between supply voltage and the Switching power voltage to fall as for part to be measured.
Shown in Fig. 5 B, processing module 32 is coupled to emulation metal level M etc. between supply voltage and the Switching power voltage, make originally and separated from one anotherly in Fig. 5 A to wait supply voltage and Switching power voltage to be coupled in to form short circuit together, and the resistance R that is had owing to emulation metal level M is according to V by emulation metal level M
DS/ I
DSAnd get, so can showing, emulation metal level M is equal to the characteristic that tolerance value Δ V falls in transient voltage in many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 '.Then illustrate the cut-open view of many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 that does not add emulation metal level M as yet and the many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 ' that has added emulation metal level M respectively as for Fig. 6 A and Fig. 6 B, do not give unnecessary details separately in this.
Afterwards, change module 34 will change the power supply that the power pin VDD of many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 ' is coupled.Please refer to Fig. 7 A and Fig. 7 B, Fig. 7 A and Fig. 7 B illustrate the net list program code after not changing net list (netlist) program code before the power supply that power pin VDD coupled as yet and having changed the power supply that power pin VDD coupled respectively.By Fig. 7 A and Fig. 7 B as can be known, change module 34 supply voltage (constantVDD) such as changes to the power supply that power pin VDD coupled of many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 ' by Switching power voltage (switched VDD) originally, but not as limit.
Illustrate electric current as for Fig. 8 and flow to the transistorized synoptic diagram of many threshold values CMOS (Complementary Metal Oxide Semiconductor) by power source pad.Shown in the arrow among Fig. 8, electric current between power end/earth terminal will flow to many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 ' by power source pad P, and by many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor 5 ' flow to network (mesh) and by network flow to standard electronic module std cell, that is the electric current between power end/earth terminal can flow to all nodes that are coupled to network (node) by power source pad P.
At last, measure module 36 and will measure a transient state voltage drop that has been added to this emulation metal level in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor.It should be noted that, because supply voltage (constant VDD) such as grade of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor this separation of Central Plains and Switching power voltage (switched VDD) have been coupled in by this emulation metal level and have formed short circuit together,, this method falls so only needing can to record the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) exactly by general eda software.That is this transient voltage that this measurement module measures falls and is the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) in fact and falls.
Second specific embodiment according to the present invention is that analytical approach falls in a kind of static transient voltage.In this embodiment, this static state transient voltage falls analytical approach and falls in order to the transistorized static transient voltage of the CMOS (Complementary Metal Oxide Semiconductor) of threshold value more than that analysis is arranged in the power supply grid controlling circuit, and this power supply grid controlling circuit can be arranged in a mobile communications device or other electronic installation, in order to close the module that temporarily can not use its function in this mobile communications device or other electronic installation, for example communication module, short message module or game module, use and reduce its whole total power consumption, but not as limit.
Please refer to Fig. 9, Fig. 9 illustrates the process flow diagram that analytical approach falls in this static state transient voltage.As shown in Figure 9, at first, this method execution in step S10 estimates a transient state voltage drop tolerance value according to the transistorized transient voltage drop characteristic of this many threshold values CMOS (Complementary Metal Oxide Semiconductor).In fact, this method is by the general transistorized transient voltage drop characteristic of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) of SPICE simulated program emulation, and uses to estimate corresponding to transistorized this transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) and fall the tolerance value.
Then, this method execution in step S11 falls the tolerance value according to this transient voltage and choose a corresponding emulation metal level in a plurality of candidate's emulation metal level.In practical application, these a plurality of candidate's emulation metal levels with and corresponding transient voltage fall the tolerance value and can be recorded in advance in the look-up table, and record these a plurality of candidate's emulation metal levels size and resistance thereof separately.
Then, this method execution in step S12 is added to this emulation metal level in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor.In more detail, this method is coupled to this emulation metal level etc. between supply voltage and the Switching power voltage, makes wait supply voltage and the Switching power voltage that separate originally to form short circuit by this emulation metal level.
Afterwards, this method execution in step S13 changes the power supply that the transistorized power pin of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) is coupled.In this embodiment, the power supply that this method will the transistorized power pin of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) be coupled supply voltage such as changes to by Switching power voltage originally, but not as limit.
At last, this method execution in step S14 measures a transient state voltage drop that has been added to this emulation metal level in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor.It should be noted that, because supply voltage such as grade of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor this separation of Central Plains and Switching power voltage have been coupled in by this emulation metal level and have formed short circuit together,, this method falls so only needing can to record the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) by this emulation metal level exactly by general eda software.That is, this measure transient voltage fall and be the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) in fact and fall.
For example, suppose that it is 5% that the tolerance value falls in the transistorized transient voltage of resulting this many threshold values CMOS (Complementary Metal Oxide Semiconductor) of this method execution in step S10, then this method can further be chosen the emulation metal level N that falls tolerance value 5% corresponding to transient voltage in numerous candidate's emulation metal levels that look-up table write down, and the width that can be obtained emulation metal level N by the information that look-up table write down is that 0.09 micron and its resistance are 0.101 ohm.
Then, this method is coupled to emulation metal level N etc. between supply voltage and the Switching power voltage, make to wait supply voltage and Switching power voltage form short circuit, and the power supply that will the transistorized power pin of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) be coupled supply voltage such as change to by the Switching power voltage of script by emulation metal level N.Therefore, this method can record the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) exactly by general eda software at last and falls.
Compared to prior art, static transient voltage according to the present invention falls analytical equipment and static transient voltage and falls after analytical approach estimates the transistorized transient state voltage drop tolerance value of many threshold values CMOS (Complementary Metal Oxide Semiconductor) to be measured by common SPICE simulated program earlier, to be added in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor corresponding to the emulation metal level that the tolerance value falls in this transient voltage again, make separate originally wait supply voltage and Switching power voltage to be coupled in to form short circuit together by this emulation metal level, and then measure the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) exactly by this emulation metal level and fall.
Therefore, static transient voltage proposed by the invention falls analytical equipment and static transient voltage and falls analytical approach and needn't be dependent on the analysis software of some particular design as prior art, only need adopt general eda software can measure the transistorized static transient voltage of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) exactly and fall, so can save the huge expense of the analysis software that those particular design additionally are set.
By the above detailed description of preferred embodiments, hope can be known description feature of the present invention and spirit more, and is not to come category of the present invention is limited with above-mentioned disclosed preferred embodiment.On the contrary, its objective is that hope can contain in the category of claim of being arranged in of various changes and tool equality institute of the present invention desire application.
Claims (15)
1. analytical equipment falls in a static transient voltage, falls in order to measure the CMOS (Complementary Metal Oxide Semiconductor) of threshold value more than transistorized one static transient voltage, and this static state transient voltage falls analytical equipment and comprises:
One estimation block is in order to estimate a transient state voltage drop tolerance value according to the transistorized transient voltage drop characteristic of this many threshold values CMOS (Complementary Metal Oxide Semiconductor);
One processing module is coupled to this estimation block, chooses an emulation metal level in order to fall the tolerance value according to this transient voltage in a plurality of candidate's emulation metal levels, and this emulation metal level is added in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor; And
One measures module, in order to measure a transient state voltage drop that has been added to this emulation metal level in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor;
Wherein, this transient voltage of measuring of this measurement module reduces to that this many threshold values CMOS (Complementary Metal Oxide Semiconductor) is transistorized should fall by the static state transient voltage.
2. analytical equipment falls in static transient voltage according to claim 1, it is characterized in that, this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor is arranged in the power supply grid controlling circuit, and this power supply grid controlling circuit comprises a switching supply voltage and a first-class supply voltage.
3. analytical equipment falls in static transient voltage according to claim 2, it is characterized in that, further comprises:
One change module, be coupled to this processing module and this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor, change to these supply voltages by this Switching power voltage of script in order to the power supply that will the transistorized power pin of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) be coupled.
4. analytical equipment falls in static transient voltage according to claim 2, it is characterized in that, this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor comprises one first electrode and one second electrode, this first electrode is coupled to these supply voltages and this second electrode is coupled to this Switching power voltage, this processing module is coupled to this emulation metal level between this first electrode and this second electrode, makes this first electrode and this second electrode form short circuit.
5. analytical equipment falls in static transient voltage according to claim 4, it is characterized in that, this measurement module is fallen by this transient voltage that general eda software measures this emulation metal level.
6. analytical equipment falls in static transient voltage according to claim 1, it is characterized in that, these a plurality of candidate's emulation metal levels and corresponding transient voltage fall the tolerance value and be recorded in advance in the look-up table.
7. analytical equipment falls in static transient voltage according to claim 6, it is characterized in that, this look-up table more records the size and the resistance thereof of these a plurality of candidate's emulation metal levels, when this processing module is chosen this emulation metal level, this processing module also can be obtained the size and the resistance thereof of this emulation metal level by this look-up table, and according to the size and the resistance thereof of this emulation metal level this emulation metal level is arranged in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor.
8. analytical equipment falls in static transient voltage according to claim 1, it is characterized in that, this estimation block is carried out the transistorized transient voltage drop characteristic of SPICE simulated program this many threshold values CMOS (Complementary Metal Oxide Semiconductor) of emulation, falls the tolerance value to estimate this transient voltage.
9. analytical approach falls in a static transient voltage, falls in order to measure the CMOS (Complementary Metal Oxide Semiconductor) of threshold value more than transistorized one static transient voltage, and this method comprises the following step:
Estimate a transient state voltage drop tolerance value according to the transistorized transient voltage drop characteristic of this many threshold values CMOS (Complementary Metal Oxide Semiconductor);
Fall the tolerance value according to this transient voltage and in a plurality of candidate's emulation metal levels, choose an emulation metal level;
This emulation metal level is added in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor; And
Measure a transient state voltage drop that has been added to this emulation metal level in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor;
Wherein, the transient voltage of this measurement gained reduces to that this many threshold values CMOS (Complementary Metal Oxide Semiconductor) is transistorized should fall by the static state transient voltage.
10. analytical approach falls in static transient voltage according to claim 9, it is characterized in that, this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor is arranged in the power supply grid controlling circuit, and this power supply grid controlling circuit comprises a switching supply voltage and a first-class supply voltage.
11. analytical approach falls in static transient voltage according to claim 10, it is characterized in that, in adding this emulation metal level to the transistorized step of this many threshold values CMOS (Complementary Metal Oxide Semiconductor), this method further comprises the following step:
The power supply that the transistorized power pin of this many threshold values CMOS (Complementary Metal Oxide Semiconductor) is coupled changes to these supply voltages by this Switching power voltage originally.
12. analytical approach falls in static transient voltage according to claim 10, it is characterized in that, this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor comprises one first electrode and one second electrode, this first electrode is coupled to these supply voltages and this second electrode is coupled to this Switching power voltage, in adding this emulation metal level to the transistorized step of this many threshold values CMOS (Complementary Metal Oxide Semiconductor), this emulation metal level is coupled between this first electrode and this second electrode, makes this first electrode and this second electrode form short circuit.
13. analytical approach falls in static transient voltage according to claim 12, it is characterized in that, in the step that this transient voltage that measures this emulation metal level falls, this method is fallen by this transient voltage that general eda software measures this emulation metal level.
14. analytical approach falls in static transient voltage according to claim 9, it is characterized in that, in the step of choosing corresponding this emulation metal level, this method also can obtain the size and the resistance thereof of this emulation metal level simultaneously, and according to the size and the resistance thereof of this emulation metal level this emulation metal level is arranged in this many threshold values CMOS (Complementary Metal Oxide Semiconductor) transistor.
15. analytical approach falls in static transient voltage according to claim 9, it is characterized in that, fall in the step of tolerance value in estimating this transient voltage according to the transistorized transient voltage drop characteristic of this many threshold values CMOS (Complementary Metal Oxide Semiconductor), this method is carried out the transistorized transient voltage drop characteristic of SPICE simulated program this many threshold values CMOS field conductor of emulation, falls the tolerance value to estimate this transient voltage.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106249034A (en) * | 2016-08-15 | 2016-12-21 | 北京航空航天大学 | Voltage drop alarm on a kind of sheet adjusting system for working in coordination with dynamic voltage frequency |
| CN112014719A (en) * | 2020-08-24 | 2020-12-01 | 南京盛科网络有限公司 | Screening method and device for mass production chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101404412B (en) * | 2008-11-05 | 2013-07-31 | 中国电力科学研究院 | Method for static electric voltage stability analysis |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106249034A (en) * | 2016-08-15 | 2016-12-21 | 北京航空航天大学 | Voltage drop alarm on a kind of sheet adjusting system for working in coordination with dynamic voltage frequency |
| CN106249034B (en) * | 2016-08-15 | 2018-10-02 | 北京航空航天大学 | A kind of on piece voltage drop alarm for cooperateing with dynamic voltage frequency adjustment system |
| CN112014719A (en) * | 2020-08-24 | 2020-12-01 | 南京盛科网络有限公司 | Screening method and device for mass production chip |
| CN112014719B (en) * | 2020-08-24 | 2023-07-11 | 南京盛科通信有限公司 | Screening method and device for mass production chips |
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| CN102116785B (en) | 2013-03-06 |
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