CN102115833A - Gold beryllium alloy material for semiconductor devices and preparation method and application thereof - Google Patents

Gold beryllium alloy material for semiconductor devices and preparation method and application thereof Download PDF

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CN102115833A
CN102115833A CN2009102445579A CN200910244557A CN102115833A CN 102115833 A CN102115833 A CN 102115833A CN 2009102445579 A CN2009102445579 A CN 2009102445579A CN 200910244557 A CN200910244557 A CN 200910244557A CN 102115833 A CN102115833 A CN 102115833A
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gold
beryllium
alloy
preparation
golden
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CN102115833B (en
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陈怡兰
史秀梅
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BEIJING NON-FERROUS METAL AND RARE-EARTH APPLICATION INST
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Abstract

The invention discloses a gold beryllium material for semiconductor devices and a preparation method and application thereof. The gold beryllium alloy comprises the following components in mass percent: 1-5% of Be and balance of Au. The preparation method comprises the following steps: calculating and weighing raw materials according to the components and the mass percent; putting into an aluminum oxide crucible in subsequence for gold and beryllium semiconductor devices, then putting the crucible into a semicircular sealable quartz glass cover and vacuumizing; heating by a resistance furnace to melt the gold and the beryllium, stopping heating after refining; cooling to below 50 DEG C to obtain intermediate alloy of gold and beryllium; melting the obtained intermediate alloy of gold and beryllium together with gold by the same method, refining to obtain gold beryllium alloy with lower beryllium content; and performing the processes of smelting, continuous casting and drawing on the alloy and gold to obtain gold bonding wires. The gold beryllium alloy material disclosed by the invention is a basic alloy material for preparing high-quality tunnel diodes, and is applied to the preparation of circuits and electrodes on a film circuit of a binary compound semiconductor; and the gold beryllium alloy material also can be used for preparing gold bonding wires, thus being conducive to achieving ohmic contact between gold and semiconductors.

Description

Semiconductor device by using gold beryllium alloy material and its production and application
Technical field
The present invention relates to a kind of gold-base alloy and technology of preparing thereof, refer to a kind of golden beryllium alloy and its production and use especially, it can be used for preparing circuit and electrode materials on the Binary compound semiconductor, realizes ohmic contact between security deposit and semi-conductor.
Background technology
In preparation silicon and other semiconductor devices, must will set up ohmic contact between semi-conductor chip and mounted substrate and the lead.
In the unicircuit preparation process, many elements such as transistor, diode, resistance and electric capacity etc. are to form on silicon substrate.These elements will get up or separate with isolator with wire coupling.The formation of these elements and wiring and insulation are that vacuum moulding machine or sputter by various materials realizes at first on silicon substrate.The material requirements that is used for lead and electrode in these materials has following performance: low resistance, low electromigration, to the good tack of Si matrix, Yi Jianhe with easily form film etc.The gold beryllium alloy just in time can satisfy above-mentioned requirements.
III-V family semi-conductor is the interested research topic of people as material commonly used in photoelectric device, microwave device, the infrared eye so far always.In the semiconductor fabrication process, when annealing temperature near its heat decomposition temperature the time, part of V family atom can and be overflowed to external diffusion, and (temperature can influence the diffusion of atom on the surface, when annealing temperature approaches heat decomposition temperature, the metallic surface begins to have the trend of diffusion, what be lower than can not spread), stay the room in nearly surface.Want on this class material, to form good Ohmic contact, must stop the external diffusion of V group atom effectively, reduce its room.
In the AuBe alloy, the dispersal behavior of Be is different from the diffusion of Au, in heat-processed, be easier to diffusion than Au, this may be because the atomic radius of Be is little, facilitate penetration of interfacial layer, another kind may be because the atom of Be is easy to by dislocation and defective diffusion, causes the Be atomic diffusion and separates out at the interface.
For example,, just can be melted when the Au-Be temperature rises to more than 495 ℃, and then the wetting GaP surface of contact with it, for mutual diffusion between M-S interface Be and Ga, the P atom provides condition.Under certain annealing temperature, the especially easy internal diffusion of the Be that atomic radius is little; The Ga atom that comes out from the GaP thermal dissociation also takes place to external diffusion at the interface simultaneously, produces V GaThe room makes the Be of internal diffusion occupy its room V GaIn view of Au has the ability of very strong absorption Ga, the Ga chemical combination that easily adsorbs external diffusion forms the Au-Ga intermetallic compound.Constant temperature continues for some time, and makes the Be internal diffusion progressively accumulate certain quantity, helps to form at semiconductor surface the thin layer of tens nanometer thickness.The Ga quantity of external diffusion at this moment also increases, and participates in Au bonded quantity in nearly surface and increases, and generates the Au-Ga intermetallic compound and also increases thereupon, has suitable concentration distribution, and external diffusion plays barrier effect to V group element P
Summary of the invention
The purpose of this invention is to provide a kind of higher semiconductor device by using gold beryllium master alloy of beryllium amount that contains.
Another object of the present invention provides a kind of golden beryllium master alloy preparation methods, it utilizes unique doping techniques, can join the beryllium of higher melt in the gold equably, solved the problem that beryllium element adds difficulty, the easy segregation of composition in the alloy, meet environmental protection policy simultaneously, nontoxic, pollution-free.
A further object of the present invention provides a kind of golden beryllium alloy silk material, guarantees final spun gold performance high-quality with the Be alloying, is normally used for GaP, the ohmic contact of semiconducter device such as GaAs and GaN.
For achieving the above object, the present invention takes following design:
A kind of golden beryllium alloy, its one-tenth are grouped into and each constituent mass per-cent is:
Be:1%～5%, Au: surplus.
Basis requirement to golden beryllium alloy material is that beryllium is added in the gold, and scope is guaranteeing the inhomogeneity while of alloying constituent 1%～5%, and should guarantee does not have harm to the surrounding environment and the person in the preparation process.
A kind of purposes of above-mentioned golden beryllium alloy, it is used for preparing circuit on the Binary compound semiconductor, electrode materials or is processed into bonding gold wire through melting-continuous casting-drawing process.
A kind of above-mentioned semiconductor device is with the preparation method of golden beryllium alloy, and its method steps is as follows:
1) becomes to be grouped into by not super above-mentioned golden beryllium alloy and quality per distribution ratio range computation, weigh, be equipped with High Purity Gold, beryllium material;
2) successively put into alumina crucible in proper order the preceding by the raw material High Purity Gold, again crucible is put into semicircular salable quartz glass cover, and be evacuated to 4-6Pa;
3) send into the process furnace internal heating, begin to heat up, the control heat-up rate is 8～12 ℃/minute;
4) temperature in the control process furnace is up to 1100 ℃, makes the gold fusing;
5) temperature variation in the control process furnace makes it be not less than 1000 ℃, leaves standstill 10 minutes, and the refining melt makes it more even;
6) stop heating, cool to the furnace below 50 ℃, take out;
7) obtain the higher golden beryllium master alloy material ingot of beryllium content.
Described High Purity Gold material purity should be more than 5N, and beryllium purity should be more than 3N.
The preparation of described High Purity Gold: is that the golden starting material of 4N are purified with electrolytic process to purity, removes impurity element, and the purity of metallic gold is reached more than the 5N.
The above-mentioned golden beryllium alloy of a kind of usefulness prepares the method for bonding gold wire, and its method steps is as follows:
1) by making proportional quantity range computation that Be composition quality per distribution ratio in the product is 0.0003-0.001%, weighing, is equipped with High Purity Gold, golden beryllium master alloy material;
2) order of down payment beryllium master alloy, gold is successively put into alumina crucible, assembles continuous caster;
3) be evacuated to 4～6Pa;
4) applying argon gas in continuous caster, pressure are 200～300Pa;
5) heat up 15～20 ℃/minute of control heat-up rates;
6) temperature in the control Reaktionsofen is up to 1100 ℃, makes the gold fusing;
7) temperature in the control crucible concise 3～5 minutes, makes it more even between 1200-1250 ℃;
8) temperature of control melt, the beginning continuous casting, speed is 2mm/s, obtains golden beryllium alloy Φ 5mm silk material;
To the final dimension specification, working modulus is 50～60% to the golden beryllium alloy Φ 5mm silk material that 9) will obtain between annealing by Wire Drawing.
In the aforesaid method, the order of down payment beryllium master alloy, gold is put into alumina crucible, can be beneficial to continuous casting and obtain a material so that golden beryllium master alloy is placed on crucible bottom.
Add in the gold with the present invention's gold beryllium master alloy, can be processed into the bonding gold wire that contains Be:0.0003-0.001% by drawing procedure again.This spun gold with the Be alloying, hard attitude breaking force 〉=18gf; Soft attitude breaking force 〉=7gf; Unit elongation is 3%-10%, and fluctuation range is limited in 3%.
The present invention's gold beryllium alloy is main material with the gold, is circuit and the electrode materials that is used to prepare on the Binary compound semiconductor, realizes ohmic contact between security deposit and semi-conductor.The application of the golden beryllium alloy material among the present invention can make the M-S contact interface form a kind of particular interface of reacting diffusion, and it has certain width, and along with temperature raises, the interface broadening.It is different from the surface of original binary semiconductor, is a diffusion layer that contains atoms metal, and this is the result of mutual diffusion mutually between semi-conductor one side and the contacting metal Au-Be in the M-S contact.The existence of this diffusion layer can stop the external diffusion of V group element.
The method that the present invention prepares golden beryllium alloy can guarantee that the golden beryllium alloy for preparing reaches beryllium content height, the uniform requirement of composition.The spun gold that contains the Trace Beryllium element that uses this alloy material to process can reach and semi-conductor between realize the purpose of ohmic contact.
Advantage of the present invention is:
1, the present invention's gold beryllium alloy material has higher beryllium content, the requirement of circuit and electrode on the satisfied preparation Binary compound semiconductor thin film circuit, the application of this material finally can realize setting up ohmic contact between semi-conductor chip and mounted substrate and the lead in the Binary compound semiconductor thin film circuit.
2, the present invention's gold beryllium alloy material is widely used in GaP, the ohmic contact of semiconducter device such as GaAs and GaN as the raw material of bonding gold wire.
3, the present invention's gold beryllium alloy preparation methods uniqueness, the crucible of preparation usefulness is put into semicircular salable quartz glass cover, be in fully under the sealed state at the preparation process interalloy, do not contact with outside air and personnel, can accomplish personnel and surrounding environment nontoxic, pollution-free, and easy handling.
4, gordian technique of the present invention is to prepare that height contains the alloy material of beryllium amount and the golden beryllium alloy composition that makes is very even, makes the semi-conductor base mateiral that can further obtain excellent property.
Embodiment
Embodiment 1:
Adopt following preparation method to prepare golden beryllium master alloy, its component and mass percent are: Be:5%, Au: surplus (is called for short AuBe 5).
Preparation technology is as follows:
A) be equipped with starting material: golden 4N (99.99%) starting material are purified with electrolytic process, remove impurity element (mainly Pb, Sb, In, Bi and rare earth element being controlled), make the purity of metallic gold reach 5N above (＞99.999%), the above beryllium starting material of outsourcing 3N; Calculate, weigh according to said components and mass percent proportioning.
B) order of down payment, beryllium is successively put into alumina crucible, crucible is put into semicircular salable quartz glass cover again, and is vacuumized;
C) use the resistance furnace heating, begin to heat up, the control heat-up rate is 8～12 ℃/minute;
D) temperature in the controlling resistance stove is up to 1100 ℃, makes the gold fusing;
E) temperature variation in the control stove makes it be not less than 1000 ℃, leaves standstill 10 minutes, and the refining melt makes it more even;
F) stop heating, cool to the furnace below 50 ℃, take out; Obtain the higher intermediate alloy ingot of beryllium content.
Embodiment 2:
Adopt embodiment 1 described method to prepare golden beryllium master alloy, difference is: change component and mass percent proportioning; Make golden beryllium master alloy component and mass percent be: Be:4%, Au: surplus (being called for short AuBe4).
Embodiment 3:
Adopt embodiment 1 described method to prepare golden beryllium master alloy, difference is: change component and mass percent proportioning; Make golden beryllium master alloy component and mass percent be: Be:3%, Au: surplus (being called for short AuBe3).
Embodiment 4:
Adopt embodiment 1 described method to prepare golden beryllium master alloy, difference is: change component and mass percent proportioning; Make golden beryllium master alloy component and mass percent be: Be:2%, Au: surplus (being called for short AuBe2).
Embodiment 5:
Adopt embodiment 1 described method to prepare golden beryllium master alloy, difference is: change component and mass percent proportioning; Make golden beryllium master alloy component and mass percent be: Be:1%, Au: surplus (being called for short AuBe1).
In prepared product gold such as embodiment 1 to embodiment 5 beryllium alloy, the Be mass percent is 1% the best, and near the composition of eutectic point, and this composition is wider as the master alloy use of bonding gold wire preparation.
Embodiment 6:
Utilize the prepared AuBe of embodiment 1 5Master alloy prepares 200g and makes the golden beryllium alloy that component content is Be1% mass percent (abbreviation AuBe1), and method is as follows:
A) calculate, weigh by ratio range, AuBe5 master alloy 40g and golden 160g that embodiment 1 is prepared.
B) order of down payment beryllium master alloy, gold is successively put into alumina crucible, crucible is put into semicircular salable quartz glass cover again, and is vacuumized;
C) use the resistance furnace heating, begin to heat up, the control heat-up rate is 8～12 ℃/minute;
D) temperature in the controlling resistance stove is up to 1100 ℃, makes the gold fusing;
E) temperature variation in the control stove makes it be not less than 1000 ℃, leaves standstill 10 minutes, and the refining melt makes it more even;
F) stop heating, cool to the furnace below 50 ℃, take out; Obtain beryllium content and be 1% intermediate alloy ingot;
Golden beryllium alloy (containing Be:1%) with aforesaid method prepares has the uniform characteristics of composition.
Embodiment 7:
Utilize the prepared AuBe of embodiment 6 1Master alloy prepares 3000g and makes the golden beryllium alloy silk material that component content is a Be0.001% mass percent (abbreviation bonding gold wire), and method is as follows:
1) calculates, weighs golden beryllium master alloy 30g, high-purity (5N) golden 2970g by ratio range;
2) order of down payment beryllium master alloy, gold is successively put into alumina crucible, assembles continuous caster;
3) be evacuated to 4～6Pa;
4) applying argon gas in stove, pressure are 200～300Pa;
5) heat up 15～20 ℃/minute of control heat-up rates;
6) temperature in the control Reaktionsofen is up to 1100 ℃, makes the gold fusing;
7) temperature in the control crucible concise 3～5 minutes, makes it more even between 1200-1250 ℃;
8) temperature of control melt, the beginning continuous casting, speed is 2mm/s, obtains golden beryllium alloy Φ 5mm silk material.
9) with golden beryllium alloy Φ 5mm by Wire Drawing to the final dimension specification, working modulus is 50～60% between annealing.
Embodiment 8:
Utilize the AuBe of the same class methods preparation of embodiment 7 1Master alloy prepared composition content is the golden beryllium alloy silk material of Be0.0008% mass percent (abbreviation bonding gold wire), method roughly the same, difference is: AuBe 1Choosing of master alloy and selecting of total dosage.
Embodiment 9:
Utilize the AuBe of the same class methods preparation of embodiment 7 1Master alloy prepared composition content is the golden beryllium alloy silk material of Be0.0005% mass percent (abbreviation bonding gold wire), method roughly the same, difference is: AuBe 1Choosing of master alloy and selecting of total dosage.
Embodiment 10:
Utilize the AuBe of the same class methods preparation of embodiment 6 1Master alloy prepared composition content is the golden beryllium alloy silk material of Be0.0003% mass percent (abbreviation bonding gold wire), method roughly the same, difference is: AuBe 1Choosing of master alloy and selecting of total dosage.
Embodiment 11:
Preceding method steps continues wire drawing and is machined to desired size with embodiment 7, and the diameter dimension of bonding gold wire has obtained the line material on the Binary compound semiconductor between 20-50 μ m.
Embodiment 12:
Preparation method of the present invention is nontoxic, pollution-free to the person and surrounding environment, and can satisfy the circuit made on the Binary compound semiconductor and the requirement of electrode materials; Especially can be applied to GaP, on the semiconducter device such as GaAs and GaN, realize ohmic contact, effect is excellent.
Golden beryllium alloy of the present invention prepares the performance that circuit, electrode materials or bonding gold wire on the Binary compound semiconductor all is better than existing same type of material! This spun gold with the Be alloying, hard attitude breaking force 〉=18gf; Soft attitude breaking force 〉=7gf; Unit elongation is 3%-10%, and fluctuation range is limited in 3%.
The present invention's gold beryllium alloy material is the base alloy material of preparation high-quality tunnel diode, is applied to prepare circuit and electrode on the Binary compound semiconductor thin film circuit; Also can prepare bonding gold wire with this alloy, the semiconductor element that is usually used in transistor, unicircuit or large-scale integrated circuit is connected with the lead-in wire of outside, finally can realize the ohmic contact between gold and semi-conductor.

Claims (8)

1. a semiconductor device by using gold beryllium alloy is characterized in that its one-tenth is grouped into and mass percent: Be:1-5%, Au: surplus.
2. semiconductor device by using gold beryllium alloy material according to claim 1, it is characterized in that: in the described golden beryllium alloy, the Be mass percent is 1%.
3. the purposes of the described golden beryllium alloy of claim 1 is characterized in that: described golden beryllium alloy is used for preparing circuit on the Binary compound semiconductor, electrode materials or is processed into bonding gold wire through melting-continuous casting-drawing process.
4. the preparation method of the described semiconductor device by using gold of a claim 1 beryllium alloy is characterized in that method steps is as follows:
1) becomes to be grouped into by the described golden beryllium alloy of not super claim 1 and quality per distribution ratio range computation, weigh, be equipped with High Purity Gold, beryllium material;
2) successively put into alumina crucible in proper order the preceding by the raw material High Purity Gold, again crucible is put into semicircular salable quartz glass cover, and be evacuated to 4-6Pa;
3) send into the process furnace internal heating, begin to heat up, the control heat-up rate is 8～12 ℃/minute;
4) temperature in the control process furnace is up to 1100 ℃, makes the gold fusing;
5) temperature variation in the control process furnace makes it be not less than 1000 ℃, leaves standstill 10 minutes, and the refining melt makes it more even;
6) stop heating, cool to the furnace below 50 ℃, take out;
7) obtain golden beryllium master alloy material ingot by the described golden beryllium alloy proportional quantity preparation of claim 1.
5. the preparation method of semiconductor device by using gold beryllium alloy according to claim 4, it is characterized in that: by in the described golden beryllium alloy, the e mass percent is that 1% proportional quantity calculates, with the preparation golden beryllium intermediate alloy ingot again with High Purity Gold through step 2)-6) and method melt refining, obtain the elaboration in the uniform golden beryllium alloy of composition.
6. according to the preparation method of claim 5 or 6 described semiconductor device by using gold beryllium alloys, it is characterized in that: described High Purity Gold material purity is more than 5N, and beryllium purity is more than 3N.
7. the preparation method of semiconductor device by using according to claim 6 gold beryllium alloy is characterized in that the preparation of described High Purity Gold: is that the golden starting material of 4N are purified with electrolytic process to purity, removes impurity element, and the purity of metallic gold is reached more than the 5N.
8. one kind prepares the method for bonding gold wire with the described golden beryllium alloy of claim 1, it is characterized in that method steps is as follows:
1) by making proportional quantity range computation that Be composition quality per distribution ratio in the product is 0.0003-0.001%, weighing, is equipped with High Purity Gold, golden beryllium master alloy material;
2) order of down payment beryllium master alloy, gold is successively put into alumina crucible, assembles continuous caster;
3) be evacuated to 4～6Pa;
4) applying argon gas in stove, pressure are 200～300Pa;
5) heat up 15～20 ℃/minute of control heat-up rates;
6) temperature in the control Reaktionsofen is up to 1100 ℃, makes the gold fusing;
7) temperature in the control crucible concise 3～5 minutes, makes it more even between 1200-1250 ℃;
8) temperature of control melt, the beginning continuous casting, speed is 2mm/s, obtains golden beryllium alloy Φ 5mm silk material;
To the final dimension specification, working modulus is 50～60% to the golden beryllium alloy Φ 5mm silk material that 9) will obtain between annealing by Wire Drawing.
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CN104353669A (en) * 2014-09-12 2015-02-18 北京科技大学 Preparation method of high-performance gold coated copper bonding wire
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