CN102105836A - 辐射源、光刻设备和器件制造方法 - Google Patents

辐射源、光刻设备和器件制造方法 Download PDF

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Publication number
CN102105836A
CN102105836A CN2009801288121A CN200980128812A CN102105836A CN 102105836 A CN102105836 A CN 102105836A CN 2009801288121 A CN2009801288121 A CN 2009801288121A CN 200980128812 A CN200980128812 A CN 200980128812A CN 102105836 A CN102105836 A CN 102105836A
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CN
China
Prior art keywords
radiation
irradiator
respect
gatherer
source module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801288121A
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English (en)
Chinese (zh)
Inventor
M·克拉森
R·格罗内维尔德
A·斯卓克肯
G·斯温克尔斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of CN102105836A publication Critical patent/CN102105836A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2009801288121A 2008-07-30 2009-07-15 辐射源、光刻设备和器件制造方法 Pending CN102105836A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8475908P 2008-07-30 2008-07-30
US61/084,759 2008-07-30
US9244308P 2008-08-28 2008-08-28
US61/092,443 2008-08-28
PCT/EP2009/059045 WO2010012588A1 (en) 2008-07-30 2009-07-15 Radiation source, lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
CN102105836A true CN102105836A (zh) 2011-06-22

Family

ID=41134690

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801288121A Pending CN102105836A (zh) 2008-07-30 2009-07-15 辐射源、光刻设备和器件制造方法

Country Status (6)

Country Link
US (1) US20110122389A1 (https=)
JP (1) JP5449352B2 (https=)
KR (1) KR101619272B1 (https=)
CN (1) CN102105836A (https=)
NL (1) NL2003202A1 (https=)
WO (1) WO2010012588A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220342314A1 (en) * 2020-01-09 2022-10-27 Carl Zeiss Smt Gmbh Illumination optical system for euv projection lithography

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2003192A1 (nl) * 2008-07-30 2010-02-02 Asml Netherlands Bv Alignment of collector device in lithographic apparatus.
NL2009372A (en) * 2011-09-28 2013-04-02 Asml Netherlands Bv Methods to control euv exposure dose and euv lithographic methods and apparatus using such methods.
CN108475027B (zh) * 2016-01-18 2020-08-28 Asml荷兰有限公司 射束测量系统、光刻系统和方法
DE102017212534A1 (de) * 2017-07-21 2019-01-24 Carl Zeiss Smt Gmbh Optisches System, Lithographieanlage, Verfahren zum Herstellen eines optischen Systems sowie Verfahren zum Austauschen eines Moduls
DE102020212229B3 (de) * 2020-09-29 2022-01-20 Carl Zeiss Smt Gmbh Blenden-Vorrichtung zur Begrenzung eines Strahlengangs zwischen einer Lichtquelle und einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die Projektionslithographie
DE102024201763A1 (de) 2024-02-27 2025-02-20 Carl Zeiss Smt Gmbh Verfahren zur Vermessung einer Ist-Orientierung einer Reflexionsfläche eines aktorisch verkippbaren Nutz-Einzelspiegels sowie Messeinrichtung zur Durchführung des Verfahrens

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987601A2 (en) * 1998-09-17 2000-03-22 Nikon Corporation An exposure apparatus and exposure method using same
EP1605312A1 (en) * 2004-06-08 2005-12-14 ASML Netherlands BV Radiation system, lithographic apparatus and device manufacturing method
US20050274897A1 (en) * 2002-09-30 2005-12-15 Carl Zeiss Smt Ag And Asml Netherlands Illumination system for a wavelength of less than or equal to 193 nm, with sensors for determining an illumination
US20060002113A1 (en) * 2004-06-30 2006-01-05 Manish Chandhok Adjustable illumination source
WO2007054291A1 (en) * 2005-11-10 2007-05-18 Carl Zeiss Smt Ag Euv illumination system with a system for measuring fluctuations of the light source

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987601A2 (en) * 1998-09-17 2000-03-22 Nikon Corporation An exposure apparatus and exposure method using same
US20050274897A1 (en) * 2002-09-30 2005-12-15 Carl Zeiss Smt Ag And Asml Netherlands Illumination system for a wavelength of less than or equal to 193 nm, with sensors for determining an illumination
EP1605312A1 (en) * 2004-06-08 2005-12-14 ASML Netherlands BV Radiation system, lithographic apparatus and device manufacturing method
US20060002113A1 (en) * 2004-06-30 2006-01-05 Manish Chandhok Adjustable illumination source
WO2007054291A1 (en) * 2005-11-10 2007-05-18 Carl Zeiss Smt Ag Euv illumination system with a system for measuring fluctuations of the light source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220342314A1 (en) * 2020-01-09 2022-10-27 Carl Zeiss Smt Gmbh Illumination optical system for euv projection lithography
US12468228B2 (en) * 2020-01-09 2025-11-11 Carl Zeiss Smt Gmbh Illumination optical system for EUV projection lithography

Also Published As

Publication number Publication date
JP2012509572A (ja) 2012-04-19
US20110122389A1 (en) 2011-05-26
NL2003202A1 (nl) 2010-02-02
KR20110049821A (ko) 2011-05-12
JP5449352B2 (ja) 2014-03-19
KR101619272B1 (ko) 2016-05-10
WO2010012588A1 (en) 2010-02-04

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Application publication date: 20110622