CN102088037B - Zener diode and manufacturing method thereof - Google Patents
Zener diode and manufacturing method thereof Download PDFInfo
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- CN102088037B CN102088037B CN 200910188618 CN200910188618A CN102088037B CN 102088037 B CN102088037 B CN 102088037B CN 200910188618 CN200910188618 CN 200910188618 CN 200910188618 A CN200910188618 A CN 200910188618A CN 102088037 B CN102088037 B CN 102088037B
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Abstract
The present invention provides a Zener diode, and the Zener diode comprises: an N-type substrate, a surface oxide film on the N-type substrate, an anodic area inside the N-type substrate, a cathodic area inside the anodic area, and an N-type injection area inside the anodic area, wherein the N-type lower drift region surrounds cambered surface of the cathode junction. By adopting the structure of the Zener diode in the present invention, the breakdown of the Zener diode at the cambered surface of the cathode junction can be avoided, the Zener breakdown can be determined accurately, and the stability of breakdown voltage can be improved.
Description
[technical field]
The present invention relates to a kind of Zener diode and manufacture method thereof.
[background technology]
Fig. 3 is the schematic diagram of traditional Zener diode, and anode region and cathodic region form PN, and the cathodic region that PN junction is adjacent and the impurity concentration of anode region have determined the puncture voltage of Zener diode.Be the knot face that diffusion and the mode injected form because adopt in the cathodic region, cathode junction is forming cambered surface near the bottom easily, because the radius of curvature at cambered surface AB two places of cathode junction is less, punctures and occurs in easily AB two places, has affected the stability of puncture voltage.
[summary of the invention]
In view of this, be necessary to provide a kind of puncture voltage more stable Zener diode for the unsettled problem of the puncture voltage of above-mentioned Zener diode.
In addition, also be necessary to provide the manufacture method of the more stable Zener diode of a kind of puncture voltage.
A kind of Zener diode comprises the N-type substrate, the surface film oxide on the N-type substrate, anode region on the N-type substrate, the cathodic region is characterized in that within the anode region: also comprise the N-type injection region within the anode region, this N-type injection region is positioned at cathode junction cambered surface place.
Preferably, the injection zone of described N-type injection region is identical with the injection zone of described anode region.
Preferably, the injection peak depth of described N-type injection region is at cathode junction 2/3rds junction depth places.
Preferably, the N-type impurity of described N-type injection region is phosphorus.
Preferably, the impurity concentration scope of described N-type injection region is 1 * 10
16～1 * 10
18Cm
-3
Preferably, the thickness range of described N-type injection region is 0.1um～0.15um.
Preferably, the N-type impurity in described cathodic region is the combination of arsenic or arsenic and phosphorus.
A kind of manufacture method of Zener diode comprises the steps:
Step 1: prepare the N-type substrate, form surface film oxide at silicon substrate, shelter lower at the photoresist masking film, inject p type impurity to the N-type substrate, it injects peakedness ratio negative electrode junction depth, injects simultaneously N-type impurity, to form the N-type injection region, inject peak depth at the cambered surface place of cathode junction.
Step 2: utilize the photoresist masking film, inject the N-type ion, in the anode region, form the cathodic region.
Step 3: utilize the photoresist masking film, inject P type ion, annealing forms the draw-out area of anode region.
Step 4: make insulating barrier and cover the N-type substrate, do respectively the wiring in cathodic region and the wiring of anode region.
Preferably, the injection peak depth of described N-type injection region is at cathode junction 2/3rds junction depth places.
Preferably, the injection zone of described N-type injection region is identical with the injection zone of described p type impurity.
Preferably, do not need extra annealing behind the Implantation of described step 1.
Preferably, the thickness range of N-type injection region is 0.1um～0.15um.
Occur in the cathode junction bottom surface by forming the N-type injection region at cathode junction cambered surface place, make to puncture, can improve the puncture voltage that comparatively accurately determines Zener diode, improve the stability of puncture voltage.
[description of drawings]
Fig. 1 is the schematic diagram of the Zener diode of the embodiment of the invention.
Fig. 2 is the manufacture process schematic diagram of the Zener diode of the embodiment of the invention.
Fig. 3 is the schematic diagram of traditional Zener diode.
[embodiment]
Zener diode shown in Figure 1 comprises N-type substrate 1, the surface film oxide 2 on N-type substrate 1, and in the anode region 5 that N-type substrate 1 arranges, the N-type injection region 6 within anode region 5 and cathodic region 9, this N-type injection region 6 is positioned at the cambered surface place of cathode junction.The N-type substrate 1 of Zener diode also can be formed in the well region on the silicon substrate.
N-type injection region 6 places within the anode region 5, it injects peak value greatly about 2/3rds dark places of cathode junction, and its doping type is N-type, can be the N-type impurity such as combination of phosphorus or arsenic and phosphorus, but doping content is lower than cathodic region 9, and the impurity concentration scope of N-type injection region 6 is approximately 1 * 10
16～1 * 10
18Cm
-3, N-type injection region 6 can reduce the concentration of p type impurity herein to improve junction breakdown voltage herein.The concentration of N-type injection region 6 controls to the puncture voltage of the cambered surface that can make cathode junction greater than the puncture voltage of cathode junction bottom surface, then puncture the place, bottom surface that just transfers to cathode junction, can comparatively accurately determine breakdown voltage value, the stability of Zener breakdown also can be controlled preferably.
The manufacture method of said structure as shown in Figure 2, comprises four steps:
Step 1: shown in Fig. 2 (a), the N-type well region of preparing N-type substrate 1 or forming at silicon substrate forms the surface film oxide 2 that is made of silica at silicon substrate, and the formation method can be thermal oxidation method.Then, under photoresist masking film 3 is sheltered, inject p type impurity 4 to N-type substrate 1, form anode region 5, its concentration has determined the puncture voltage of device, and it injects peakedness ratio negative electrode junction depth, p type impurity 4 preferred use boron ions.Inject simultaneously N-type impurity, to form N-type injection region 6, the injection zone of N-type injection region 6 is identical with the injection zone of anode region 5, energy is selected upper slightly more shallow than cathode junction, inject peak value at the cambered surface place of cathode junction, preferably at cathode junction 2/3rds junction depth places, the thickness range of N-type injection region 6 is greatly about 0.1um～0.15um.Behind the Implantation, do not need extra annealing operation.
Step 2: shown in Fig. 2 (b), utilize photoresist masking film 7, inject the N-type ions 8 such as arsenic, in anode region 5, form cathodic region 9.
Step 3: shown in Fig. 2 (c), utilize photoresist masking film 10, inject P type ion 11, preferably use boron difluoride, annealing forms the draw-out area 12 of anode region 5.
Step 4: shown in Fig. 2 (d), the insulating barrier that Production Example such as silica consist of covers N-type substrate 1, and manufacture is preferably utilized CVD (chemical vapor deposition), does respectively the wiring 14 in cathodic region and the wiring 13 of anode region 5.
Adopt above-mentioned steps, reduced the operation of having annealed, and just form the anode region of Zener diode by a photoetching, reduced process costs.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. Zener diode, comprise the N-type substrate, surface film oxide on the N-type substrate, p type anode district on the N-type substrate, the cathodic region is within the anode region, it is characterized in that: also comprise the N-type injection region within the anode region, this N-type injection region is positioned at cathode junction cambered surface place, and the injection peak depth of described N-type injection region is at cathode junction 2/3rds junction depth places.
2. Zener diode as claimed in claim 1, it is characterized in that: the injection zone of described N-type injection region is identical with the injection zone of described anode region.
3. Zener diode as claimed in claim 1, it is characterized in that: the N-type impurity of described N-type injection region is phosphorus.
4. Zener diode as claimed in claim 1, it is characterized in that: the impurity concentration scope of described N-type injection region is 1 * 10
16～1 * 10
18Cm
-3
5. Zener diode as claimed in claim 1, it is characterized in that: the thickness range of described N-type injection region is 0.1 micron～0.15 micron.
6. Zener diode as claimed in claim 1, it is characterized in that: the N-type impurity in described cathodic region is the combination of arsenic or arsenic and phosphorus.
7. the manufacture method of a Zener diode is characterized in that: comprise the steps:
Step 1: prepare the N-type substrate, form surface film oxide at described N-type substrate, shelter lower at the photoresist masking film, inject p type impurity to the N-type substrate and form the anode region, it injects peakedness ratio negative electrode junction depth, injects simultaneously N-type impurity, to form the N-type injection region, this N-type injection region is formed at cathode junction cambered surface place, injects peak depth at cathode junction 2/3rds junction depth places;
Step 2: utilize the photoresist masking film, inject the N-type ion, in the anode region, form the cathodic region;
Step 3: utilize the photoresist masking film, inject P type ion, annealing forms the draw-out area of anode region;
Step 4: make insulating barrier and cover the N-type substrate, do respectively the wiring in cathodic region and the wiring of anode region.
8. the manufacture method of Zener diode as claimed in claim 7, it is characterized in that: the injection zone of described N-type injection region is identical with the injection zone of described p type impurity.
9. the manufacture method of Zener diode as claimed in claim 7 is characterized in that: do not need extra annealing behind the Implantation of described step 1.
10. the manufacture method of Zener diode as claimed in claim 7, it is characterized in that: the thickness range of N-type injection region is 0.1 micron～0.15 micron.
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| CN 200910188618 CN102088037B (en) | 2009-12-04 | 2009-12-04 | Zener diode and manufacturing method thereof |
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|---|---|---|---|
| CN 200910188618 CN102088037B (en) | 2009-12-04 | 2009-12-04 | Zener diode and manufacturing method thereof |
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| CN102088037A CN102088037A (en) | 2011-06-08 |
| CN102088037B true CN102088037B (en) | 2013-04-17 |
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| JP5927056B2 (en) * | 2012-06-14 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| CN106711235A (en) * | 2016-08-31 | 2017-05-24 | 佛山芯光半导体有限公司 | Novel polysilicon thin-film Zener diode and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1518130A (en) * | 2003-01-09 | 2004-08-04 | 松下电器产业株式会社 | Semiconductor device |
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|---|---|---|---|---|
| CN1518130A (en) * | 2003-01-09 | 2004-08-04 | 松下电器产业株式会社 | Semiconductor device |
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Effective date of registration: 20171009 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214000 No. 5 Hanjiang Road, national hi tech Industrial Development Zone, Wuxi, Jiangsu, China Co-patentee before: Wuxi Huarun Shanghua Technology Co., Ltd. Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |