CN102088033B - Closed groove type power metal oxide semiconductor field effect transistor structure and manufacturing method thereof - Google Patents
Closed groove type power metal oxide semiconductor field effect transistor structure and manufacturing method thereof Download PDFInfo
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- CN102088033B CN102088033B CN 200910252065 CN200910252065A CN102088033B CN 102088033 B CN102088033 B CN 102088033B CN 200910252065 CN200910252065 CN 200910252065 CN 200910252065 A CN200910252065 A CN 200910252065A CN 102088033 B CN102088033 B CN 102088033B
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Abstract
The invention discloses a closed groove type power metal oxide semiconductor field effect transistor structure and a manufacturing method thereof. The structure has a first conducting drain area, a second conducting main body, a groove type grid and a plurality of first conducting source areas, wherein the main body is positioned in the drain area; the groove type grid is positioned in the main body and has at least two long strip parts and a staggered part, in which the bottoms of the long strip parts are positioned in the drain area, and the bottom of the staggered part is positioned in the main body; the source area is positioned in the main body and at least is in adjacent connection with the long strip parts of the groove type grid. In the invention, by reducing the contact area between the groove type grid and the drain, the grid/drain capacitance value of the closed groove type power metal oxide semiconductor field effect transistor structure is reduced.
Description
Technical field
The present invention relates to a kind of groove-type power metal oxide semiconductor (hereinafter to be referred as golden oxygen half) field effect transistor structure and preparation method thereof, particularly about a kind of enclosed type (closed cell) groove type power metal oxygen half field effect transistor structure and preparation method thereof.
Background technology
Along with the high frequency of circuit application, the requirement of transistor switch speed also improves gradually.The transistor arrangement of high switch speed can effectively reduce switch cost, further promotes power-efficient.
Figure 1A is the generalized section of opening (striped cell) the groove type power metal oxygen half field effect transistor of typical case structure.As shown in FIG., this groove type power metal oxygen half field effect transistor structure has the heavily doped substrate 10 of a N-type, a N-type epitaxial layer 12, a P type body 13, a grid (Gate) oxide layer 15, a channel grid 16 and plurality of source regions 17.Wherein, epitaxial layer 12 is formed on the substrate 10, and body 13 is formed on the epitaxial layer 12.Grid oxic horizon 15 is around channel grid 16, to separate channel grid 16 and P type body 13.Channel grid 16 is made of a plurality of strip polysilicon structures.These strip polysilicon structures at certain intervals distance are formed in the body 13, and its bottom also extends in the epitaxial layer 12 of body 13 belows.Plurality of source regions 17 is arranged in respectively the both sides of these strip polysilicon structures.
Figure 1B is the generalized section of a typical enclosed type (closed cell) groove type power metal oxygen half field effect transistor structure.As shown in the figure, this groove type power metal oxygen half field effect transistor structure has the heavily doped substrate 20 of a N-type, a N-type epitaxial layer 22, a P type body 23, a grid oxic horizon 25, a channel grid 26 and plurality of source regions 27.Wherein, epitaxial layer 22 is formed on the substrate 20, and body 23 is formed on the epitaxial layer 22.Grid oxic horizon 25 is around channel grid 26, to separate channel grid 26 and P type body 23.Channel grid 26 presents a network structure, is formed in the body 23, and defines a plurality of grids.The bottom of channel grid 26 also extends in the epitaxial layer 22 of body 23 belows.And plurality of source regions 27 is formed at respectively in the grid that channel grid 26 defines.
The passage that closed groove type power metal oxide semiconductor field effect transistor structure has (channel) width is proportional to the girth of its square source area 27.The channel width that opening groove type power metal oxygen half field effect transistor structure has is proportional to the side edge length of its strip source area 17.Therefore, compared to opening groove type power metal oxygen half field effect transistor structure, closed groove type power metal oxide semiconductor field effect transistor structure can provide larger channel width in unit are, and has lower conducting resistance (Ron).
Yet compared to opening groove type power metal oxygen half field effect transistor structure, the channel grid 26 in the closed groove type power metal oxide semiconductor field effect transistor structure covers larger surface area.Because size and the channel grid 16 of grid (Gate)/drain electrode (Drain) electric capacity (Cgd) value, 26 floor space becomes positive correlation, therefore, closed groove type power metal oxide semiconductor field effect transistor structure can have higher gate/drain capacitance.
As aforementioned, closed groove type power metal oxide semiconductor field effect transistor structure has lower conducting resistance, but can produce higher gate/drain electric capacity and cause the increase of switch cost, and then limit the switch speed of transistor arrangement, be unfavorable for the high frequency of circuit application.So, how to reduce the gate/drain capacitance of closed groove type power metal oxide semiconductor field effect transistor structure, to take into account low on-resistance and low gate/drain capacitance, desire most ardently the problem of solution for the art.
Summary of the invention
Main purpose of the present invention is the junction area by reduction channel grid and drain electrode, to reduce the gate/drain capacitance of closed groove type power metal oxide semiconductor field effect transistor structure.
For achieving the above object, the invention provides a kind of enclosed type (closed cell) groove type gold oxygen half field effect transistor structure.This groove type gold oxygen half field effect transistor structure is characterized in that, comprises the drain region of one first conductivity type, body, a channel grid and a plurality of source electrode (Source) district with first conductivity type of one second conductivity type.Wherein, body is positioned on the drain region.Channel grid is positioned at body.This channel grid has at least two rectangular parts and an alternating share, and wherein, the bottom of rectangular part is positioned at the drain region, and the bottom of alternating share is positioned at body.Source area is positioned at body, and is adjacent at least the rectangular part of channel grid.
The present invention also provides a kind of manufacture method of enclosed type groove type gold oxygen half field effect transistor structure.This manufacture method is characterized in that, comprises the following steps: that (a) provides the drain region of one first conductivity type; (b) form the first doped region of one second conductivity type on the drain region; (c) form a groove in the first doped region, the bottom of groove is positioned at the drain region, and this groove has at least two rectangular districts and an ecotone; (d) form a gate dielectric in the inner surface of groove; (e) deposition one first polysilicon layer is in groove, and this first polysilicon layer roughly fills up rectangular district, but produces a depression in the centre of ecotone; (f) etching the first polysilicon layer forms a window to expose the bottom of groove to the open air in ecotone; (g) by the first polysilicon layer after the etching, the second doped region that forms one second conductivity type is adjacent to ecotone; And (h) form one second polysilicon layer in this window.
Compared to traditional closed groove type power metal oxide semiconductor field effect transistor structure, the bottom surface of channel grid is positioned at the drain region fully.In the closed groove type power metal oxide semiconductor field effect transistor structure of the present invention, only the bottom of the rectangular part of channel grid is to be positioned at the drain region, and the bottom of alternating share then is to be positioned at body.Therefore, closed groove type power metal oxide semiconductor field effect transistor structure of the present invention can effectively reduce the junction area between drain electrode and grid, and keeps roughly the same channel width.Thereby, can take into account low drain/gate capacitance and low on-resistance.
Can be further understood by the following detailed description and accompanying drawings about the advantages and spirit of the present invention.
Description of drawings
Figure 1A is the generalized section of opening (striped cell) the groove type power metal oxygen half field effect transistor of typical case structure;
Figure 1B is the generalized section of a typical enclosed type (closed cell) groove type power metal oxygen half field effect transistor structure;
Fig. 2 A to Fig. 2 J shows the first embodiment of the manufacture method of enclosed type groove type gold oxygen half field effect transistor structure of the present invention, and wherein, Fig. 2 I and Fig. 2 J difference be vertical view and the generalized section of enclosed type groove type gold oxygen half field effect transistor structure for this reason;
Fig. 3 A and Fig. 3 B are vertical view and the generalized section of enclosed type groove type gold oxygen half field effect transistor structure the second embodiment of the present invention;
Fig. 4 is the schematic diagram of enclosed type groove type gold oxygen half field effect transistor structure the 3rd embodiment of the present invention;
Fig. 5 is the schematic top plan view of enclosed type groove type gold oxygen half field effect transistor structure the 4th embodiment of the present invention;
Fig. 6 is the schematic top plan view of enclosed type groove type gold oxygen half field effect transistor structure the 5th embodiment of the present invention.
[main element description of reference numerals]
Grid oxic horizon 15,25
Channel grid 16,26
Body 130,230,330
Downward ledge 130b
The first doped region 330a
The second doped region 330b
Groove 140,440,540
Rectangular district 142,442,542
Ecotone 144,444,544
Gate dielectric 150
The first polysilicon layer 160
The second polysilicon layer 170
Channel grid 172,272
Embodiment
The purpose of channel width to reach the junction area of reduction channel grid and drain electrode, is kept simultaneously in the bottom that spirit of the present invention is to utilize the body of metal-oxide half field effect transistor structure to cover the alternating share of channel grid.In an embodiment of manufacture method provided by the present invention, the ecotone width that utilizes groove forms polysilicon shielding greater than the characteristics of rectangular sector width, and the bottom in rectangular district is covered in this polysilicon shielding, but has a window in the bottom of ecotone.And then form a doped region that has same conductivity with body by this window, so as to the bottom of the alternating share that covers channel grid.
Fig. 2 I and Fig. 2 J are respectively vertical view and the profile of enclosed type of the present invention (closed cell) groove type gold oxygen half field effect transistor structure the first embodiment.Wherein, Fig. 2 J figure is corresponding to B-B ' hatching among Fig. 2 I.
Shown in Fig. 2 J, this enclosed type groove type gold oxygen half field effect transistor structure has drain region, the body 130 of one second conductivity type, a channel grid 172 and a plurality of source areas 180 with first conductivity type of one first conductivity type.The drain region is made of a heavily doped substrate 100 and an epitaxial layer 120.Aforementioned the first conductivity type can be N-type, and the second conductivity type can be the P type.But also be not limited to this.Body 130 is positioned on the epitaxial layer 120.Channel grid 172 is positioned at body 130.Please refer to simultaneously Fig. 2 I, this channel grid 172 has at least two rectangular part 172a and an alternating share 172b.The bottom of rectangular part 172a is positioned at the drain region, and the bottom of alternating share 172b then is to be positioned at body 130.Source area 180 is positioned at body 130, and is adjacent at least the rectangular part 172a of channel grid.
Shown in Fig. 2 J, in the present embodiment, rectangular part 172a and the alternating share 172b of channel grid 172 have the roughly the same degree of depth.The lower surface of body 130 has a planar section 130a and at least one downward ledge 130b.Wherein, planar section 130a is corresponding to the rectangular part 172a of channel grid 172, and its degree of depth is less than the degree of depth of channel grid 172.Ledge 130b is corresponding to the alternating share 172b of channel grid 172 downwards, and its degree of depth is greater than the degree of depth of channel grid 172.Therefore, the bottom of rectangular part 172a can extend in the epitaxial layer 120 of body 130 belows, but the bottom of the alternating share 172b of channel grid then can be positioned at the downward ledge 130b of body.
Although in the present embodiment, the rectangular part 172a of channel grid and alternating share 172b have the roughly the same degree of depth.But, the present invention is not limited to this.Rectangular part 172a also can have the different degree of depth from alternating share 172b.As long as the degree of depth of the downward ledge 130b of body is enough to cover the bottom of alternating share 172b.
Secondly, in the present embodiment, the lower surface of body 130 has downward ledge 130b, and makes the bottom of the alternating share 172b of channel grid be positioned at body 130.But, the present invention also is not limited to this.Please refer to Fig. 3 A and Fig. 3 B, Fig. 3 B is corresponding to the generalized section of C-C ' section among Fig. 3 A figure, and in the second embodiment of the present invention, the lower surface of body 230 also can be a plane.The rectangular part 272a of channel grid 272 then is to have the different degree of depth from alternating share 272b.Wherein, rectangular part 272a has the larger degree of depth, and its bottom is positioned at the below of the lower surface of body 230, and alternating share 272b has the less degree of depth, and its bottom then is the top that is positioned at the lower surface of body 230.
In addition, in first embodiment, the lower surface of body 130 extends the bottom of the alternating share 172b of a downward ledge 130b covering groove formula grid 172.But, the present invention also is not limited to this.As shown in Figure 4, in the third embodiment of the present invention, body can be divided into one first doped region 330a and at least one the second doped region 330b.Wherein, the second doped region 330b is positioned at the below of the first doped region 330a, and disconnected from each other with the first doped region 330a.Channel grid 172a is positioned at the first doped region 330a, and the bottom of alternating share 172b is positioned at the second doped region 330b.
Fig. 2 A to Fig. 2 J is a preferred embodiment of the manufacture method of enclosed type groove type gold oxygen half field effect transistor structure of the present invention.Fig. 2 B is corresponding to the generalized section of A-A ' hatching among Fig. 2 A.At first, shown in Fig. 2 B, provide the substrate 100 of one first conductivity type, and the epitaxial layer 120 that forms one first conductivity type thereon, to consist of a drain region.Then, form the body 130 of one second conductivity type on the drain region.Next, form a groove 140 in body 130.The degree of depth of body 130 is less than the degree of depth of groove 140.The bottom of groove 140 is positioned at the drain region of body 130 belows.
Please refer to simultaneously Fig. 2 A, this groove 140 has at least two rectangular districts 142 and an ecotone 144.The groove width w1 in rectangular district 142 is less than the groove width w2 of ecotone 144.Subsequently, shown in Fig. 2 C, form a gate dielectric 150 in the inner surface of groove 140.Next, shown in Fig. 2 D, deposit one first polysilicon layer 160 in groove 140.Because the groove width w1 in rectangular district 142 is less than the groove width w2 of ecotone 144, therefore, suitably the thickness of control the first polysilicon layer 160 can make the first polysilicon layer 160 roughly fill up rectangular district 142, but can produce a significant depressions corresponding to ecotone 144 centre.
Next, shown in Fig. 2 E, utilize anisotropic etching technology etching the first polysilicon layer 160.Because the first polysilicon layer 160 corresponding to ecotone 144 centre has a significant depressions, therefore, suitably control the parameter of etch process, can make the channel bottom in rectangular district 142 be entirely polysilicon structure 162 and cover, but then be formed with the bottom that a window 164 exposes groove to the open air in the polysilicon structure 162 in ecotone 144.
Subsequently, shown in Fig. 2 F, by this polysilicon structure 162, implant the beneath trenches that the second conductivity type is doped into ecotone 144 in the ion cloth mode of planting, the doped region 165b that forms one second conductivity type is adjacent to ecotone 144.With regard to a preferred embodiment, this ion cloth is planted step and can directly be utilized the polysilicon structure 162 of etching the first polysilicon layer 160 formation to be shielding, and need not use extra light shield.Again, plant step through this ion cloth, except meeting forms doped region 165b in the beneath trenches of ecotone 144, also can form doped region 165a on the surface of body.But, because the conductivity type of this doped region 165a is identical with body 130, therefore, this ion cloth is planted the dopant profile that step can not affect body 130.
Then, shown in Fig. 2 G, deposit one second polysilicon layer 170 comprehensively, fill up the window 164 that is positioned at groove.Subsequently, shown in Fig. 2 H, eat-back (etch back) and remove the second unnecessary polysilicon layer 170, stay the polysilicon structure 172 that is positioned at groove as the grid of this metal-oxide half field effect transistor structure.At last, shown in Fig. 2 I and Fig. 2 J, in a plurality of source areas 180 with first conductivity type of body 130 interior formation.These source areas 180 are adjacent to the rectangular part 172a of channel grid at least.
It should be noted that shown in Fig. 2 A and Fig. 2 B the groove 140 of present embodiment has the part of level trend and the part of capwise, and defines a plurality of grids zone in body 130.180 of source areas are to be formed in these grid zones.Staggered place at groove 140 with the groove 140 of capwise of level trend is aforesaid ecotone 144, and other parts are aforesaid rectangular district 142.The vertical view of semiconductor structure thus, ecotone 144 presents a square, and its length of side is substantially equal to the width w1 in rectangular district 142.But, the present invention is not limited to this.It is quadrangle that this ecotone 144 is not limited to.As shown in Figure 5, in the fourth embodiment of the present invention, groove 440 can be divided into the part of three different trends, and defines a plurality of triangles zone in body 430.The source area (not shown) then is to be formed in this triangle zone.The ecotone 444 of this groove 440 presents a regular hexagon.This hexagonal length of side is substantially equal to the width w3 in rectangular district 442.The width w4 of ecotone 444 is greater than the width w3 in rectangular district 442.
In the aforementioned embodiment, the external form of ecotone 144,444 is to be subject to the arrangement mode of groove 140 and to determine fully, and the width w2.w4 of ecotone 144,444 and the width w1 in rectangular district 142,442, w3 have a proportionate relationship.Shown in Fig. 2 A, in the first embodiment of the present invention, groove 140 has the part of capwise and the part of level trend, thereby the ecotone 144 that interlocks and to present square.Again, as shown in Figure 5, in the 4th embodiment of the present invention, groove 440 is divided into the part of three different trends, to present orthohexagonal ecotone 444 and interlock.But, the present invention is not limited to this.As shown in Figure 6, in the fifth embodiment of the present invention, the external form of ecotone 544 is not the arrangement mode that depends on groove 540 fully, and the width w6 of ecotone 544 is not the width w5 that depends on rectangular district 542 fully yet.Basically, need only the width w6 of formed ecotone 544 greater than the width w5 in rectangular district 542.
And for example shown in Fig. 2 F and Fig. 2 G, present embodiment is forming the second doped region 170b after the step of the beneath trenches of ecotone 144, can carry out one and drive in (drive-in) step, make the scope of the second doped region 170b extend connection body 130, and consist of a downward ledge at the lower surface of body 130.But, the present invention is not limited to this.The aforementioned optionally step of step 1 that drives in.As shown in Figure 4, in the third embodiment of the present invention, body 330 comprises the first doped region 330a and the second doped region 330b.The second doped region 330b only covers the bottom of ecotone 144, and disconnected from each other with the first doped region 330a.
Compared to traditional closed groove type power metal oxide semiconductor field effect transistor structure of Figure 1B, the bottom surface of channel grid 26 is positioned at the drain region fully.Shown in Fig. 2 I, in closed groove type power metal oxide semiconductor field effect transistor structure of the present invention, only the bottom of the rectangular part 172a of channel grid 172 is to be positioned at the drain region, and the bottom of alternating share 172b then is to be positioned at body 130.Therefore, closed groove type power metal oxide semiconductor field effect transistor structure of the present invention can effectively reduce the junction area between drain electrode and grid, keeps simultaneously roughly the same channel width.Also therefore, closed groove type power metal oxide semiconductor field effect transistor structure of the present invention can effectively reduce the drain/gate capacitance, and keeps low on-resistance.
But, the above only is preferred embodiment of the present invention, can not limit scope of the invention process with this, i.e. all simple equivalences of doing according to the present patent application claim and description change and revise, and all still belong in the scope that patent of the present invention contains.The scope of arbitrary embodiment of the present invention or claim can not reach disclosed whole purposes or advantage or characteristics in addition.In addition, summary part and denomination of invention only are the usefulness of auxiliary patent document search, are not the scope that limits claim of the present invention.
Claims (12)
1. an enclosed type groove type gold oxygen half field effect transistor structure is characterized in that, comprising:
The drain region of one first conductivity type;
The body of one second conductivity type is positioned on this drain region;
One channel grid is positioned at this body, and this channel grid has at least two rectangular parts and an alternating share, and wherein, the bottom of this rectangular part is positioned at this drain region, and the bottom of this alternating share is positioned at this body; And
A plurality of source areas with this first conductivity type are positioned at this body, and are adjacent at least this rectangular part of this channel grid.
2. enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 1, it is characterized in that, the lower surface of this body has a planar section and at least one downward ledge, the bottom of this alternating share is positioned at this ledge, and the degree of depth of this planar section is less than the degree of depth of this channel grid.
3. enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 1 is characterized in that the rectangular part of this of this channel grid is identical with the degree of depth of this alternating share.
4. enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 1, it is characterized in that, this body has one first doped region and one second doped region, this the second doped region is positioned at the below of this first doped region, and disconnected from each other with this first doped region, this channel grid is positioned at this first doped region, and the bottom of this alternating share is positioned at this second doped region.
5. enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 1 is characterized in that the upper surface of this alternating share of this channel grid presents a polygon, and this polygonal limit number is more than or equal to four.
6. enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 1 is characterized in that the width of this alternating share is greater than the width of this rectangular part.
7. the manufacture method of an enclosed type groove type gold oxygen half field effect transistor structure is characterized in that, comprising:
The drain region of one first conductivity type is provided;
Form the first doped region of one second conductivity type on this drain region;
Form a groove in this first doped region, the bottom of this groove is positioned at this drain region, and this groove has at least two rectangular districts and an ecotone; And
Form a gate dielectric in the inner surface of this groove;
Deposit one first polysilicon layer in this groove, this first polysilicon layer roughly fills up this rectangular district, but produces a depression in the centre of this ecotone;
This first polysilicon layer of etching forms a window to expose the bottom of this groove to the open air in this ecotone;
By this first polysilicon layer after the etching, the second doped region that forms one second conductivity type is adjacent to this ecotone; And
Form one second polysilicon layer in this window.
8. the manufacture method of enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 7 is characterized in that this ecotone presents a polygon, and this polygonal length of side is substantially equal to the width in this rectangular district, and this polygonal limit number is more than or equal to four.
9. the manufacture method of enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 7 is characterized in that the width of this ecotone is greater than the width in this rectangular district.
10. the manufacture method of enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 7 is characterized in that, this second doped region extends this first doped region of connection, to consist of a body.
11. the manufacture method of enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 7 is characterized in that, this second doped region and this first doped region are disconnected from each other.
12. the manufacture method of enclosed type groove type gold oxygen half field effect transistor structure as claimed in claim 7 is characterized in that the degree of depth of this first doped region is less than the degree of depth of this groove.
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| CN 200910252065 CN102088033B (en) | 2009-12-08 | 2009-12-08 | Closed groove type power metal oxide semiconductor field effect transistor structure and manufacturing method thereof |
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| CN103247670B (en) * | 2012-02-10 | 2016-05-25 | 帅群微电子股份有限公司 | Enclosed type groove power semiconductor element and manufacture method thereof |
| CN111509028B (en) * | 2019-01-30 | 2023-03-14 | 力士科技股份有限公司 | Composite groove type metal oxide semiconductor field effect transistor and manufacturing method thereof |
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| CN101385148A (en) * | 2006-03-10 | 2009-03-11 | 万国半导体股份有限公司 | Shielded gate trench (sgt) mosfet cells implemented with a schottky source contact |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101385148A (en) * | 2006-03-10 | 2009-03-11 | 万国半导体股份有限公司 | Shielded gate trench (sgt) mosfet cells implemented with a schottky source contact |
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