CN102082235A - Light-emitting element and method for production thereof - Google Patents
Light-emitting element and method for production thereof Download PDFInfo
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- CN102082235A CN102082235A CN2010105600348A CN201010560034A CN102082235A CN 102082235 A CN102082235 A CN 102082235A CN 2010105600348 A CN2010105600348 A CN 2010105600348A CN 201010560034 A CN201010560034 A CN 201010560034A CN 102082235 A CN102082235 A CN 102082235A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
The invention discloses a light-emitting element and a method for production thereof. A light-emitting element includes a first electrode, an organic layer with a light-emitting layer made of organic light-emitting material, a half-transmitting/reflecting film, a resistance layer, and a second electrode, which are sequentially laminated on top of the other. The first electrode reflects light from the light-emitting layer, the second electrode transmits light from the light-emitting layer. The half-transmitting/reflecting film includes a first half-transmitting/reflecting film and a second half-transmitting/reflecting film which are laminated in this order from a side of the organic layer. Also, the half-transmitting/reflecting film on the organic layer has an average thickness of 1 nm to 6 nm.
Description
Technical field
The present invention relates to a kind of light-emitting component and manufacture method thereof.More specifically, the present invention relates to a kind of organic electroluminescent device and manufacture method thereof.
Background technology
Recently, because organic electroluminescence display device and method of manufacturing same replaces the trend of liquid crystal indicator, adopt the organic electroluminescence display device and method of manufacturing same of organic electroluminescent device to receive the close concern of people.(hereinafter, electroluminescence is called " EL " sometimes for short).Organic EL display is an emissive type, and its characteristic is low-power consumption.In addition, expect that it can respond apace to the high-speed video signal that is used for the high-resolution demonstration.Therefore, its exploitation and commercialization is devoted in a large amount of effort.
Organic EL is made up of first electrode that sets gradually with stepped construction, organic layer (it has the luminescent layer of being made by luminous organic material) and second electrode usually.Carrying out that resonant structure introduced organic EL or making the optimized trial of every layer thickness, thereby the light that produces in the control luminescent layer improves (luminous) colorimetric purity and luminous efficiency with expection as the composition of organic layer.(for example, referring to WO01/39554 number periodical of PCT patent disclosure (hereinafter referred to as patent documentation 1)).
Because the intensity of resonance or the thickness of organic layer make colourity and brightness depend on the visual angle more, so expectation control resonance is weak as much as possible or make organic layer thin as much as possible.In other words, the visual angle of increase causes peak wavelength big the spectrum of the light that sends from organic EL display to be moved or luminous intensity significantly reduces (referring to patent documentation 1).Yet, shown in the property, the thinner shortcoming of organic layer is, as schematically shown in Figure 18 if on first electrode, have particle (impurity) and projection, then organic layer can not covered fully, and this incomplete covering can cause the short circuit between first electrode and second electrode.Under the situation of the organic EL display of active array type, thereby this short circuit causes losing its display quality of pixel deterioration.Under the situation of the organic EL display of passive matrix, this short circuit also can cause missing line.This pixel or the missing line lost is serious problem under the situation of the few large scale organic EL display of number of defects that strict viewing angle characteristic and per unit area are allowed especially.
Up to the present, carried out repeatedly attempting reducing short circuit between first electrode and second electrode.For example, Japan Patent discloses 2002-035667 number (hereinafter referred to as patent documentation 2) and discloses a kind of bottom-emission type organic EL display that inserts resistive formation between positive pole and organic membrane.Japan Patent discloses 2006-338916 number (hereinafter referred to as patent documentation 3) and discloses a kind of two-layer positive pole and be the top emission type organic EL display of resistive formation near the positive pole of organic layer.Japan Patent discloses 2005-209647 number (hereinafter referred to as patent documentation 4) and discloses a kind of two-layer negative pole and be the bottom-emission type organic EL display of resistive formation near the positive pole of organic layer.
Summary of the invention
Yet if with light-emitting component and resonance textural association, the problems referred to above can not be solved by (disclosed in the patent documentation 1 to 4) inserts resistive formation between positive pole and negative pole technology.In other words, high resistance membrane should be enough thick in covering particle (impurity) and projection fully, thereby avoid display defect definitely.Unfortunately, increased thicker causing of high resistance membrane to view angle dependency.
In addition, from the viewpoint of the total power-saving of organic EL display, the driving voltage that reduces organic EL is very important.
Expectation provides a kind of light-emitting component and manufacture method thereof, even this light-emitting component is constructed to exist particle (impurity) and projection also can exempt short circuit between first electrode and second electrode on first electrode, and is exercisable under low driving voltage.
First embodiment of the invention provides a kind of light-emitting component, comprising:
(A) first electrode,
(B) organic layer has the luminescent layer of being made by luminous organic material,
(C) half transmitting/reflectance coating,
(D) resistive layer, and
(E) second electrode,
Wherein, first electrode, organic layer, half transmitting/reflectance coating, resistive layer and second electrode stack gradually on another,
Wherein, first electrode reflects the light from luminescent layer,
The second electrode transmission is from the light of luminescent layer,
Half transmitting/reflectance coating comprises from the first stacked in order half transmitting of organic layer side/reflectance coating and second half transmitting/reflectance coating, and
Half transmitting/reflectance coating on the organic layer has the average thickness of 1nm to 6nm.
Second embodiment of the invention, provide a kind of light-emitting component, having comprised:
(A) first electrode,
(B) organic layer has the luminescent layer of being made by luminous organic material,
(C) resistive layer, and
(D) second electrode,
Wherein, first electrode, organic layer, resistive layer and second electrode stack gradually on another,
Wherein, first electrode reflects the light from luminescent layer,
The second electrode transmission is from the light of luminescent layer, and
Be formed with mixed layer between organic layer and resistive layer, this mixed layer comprises the material of the superiors that constitute organic layer, the undermost material and the metal of formation resistive layer.
According to the 3rd execution mode of the present invention, a kind of method of making light-emitting component is provided, this light-emitting component comprises:
(A) first electrode,
(B) organic layer has the luminescent layer of being made by luminous organic material,
(C) resistive layer, and
(D) second electrode,
Wherein, first electrode, organic layer, resistive layer and second electrode stack gradually on another,
Wherein, first electrode reflects the light from luminescent layer, and
The second electrode transmission is from the light of luminescent layer.This method comprises the step that forms first half transmitting/reflectance coating and second half transmitting/reflectance coating by physical vapor deposition (PVD) on organic layer successively.
Light-emitting component according to first embodiment of the invention is characterised in that half transmitting/reflectance coating is made up of first half transmitting that stacks gradually/reflectance coating and second half transmitting/reflectance coating.Light-emitting component according to second embodiment of the invention is characterised in that, organic layer and resistive layer have mixed layer between them.According to the 3rd execution mode of the present invention, the method that is used to make light-emitting component is characterised in that, forms first half transmitting/reflectance coating and second half transmitting/reflectance coating successively by physical vapour deposition (PVD).Resulting half transmitting/reflectance coating and mixed layer provide the good electrical contact between resistive layer and the organic layer, and allow charge carrier to be introduced into organic layer under good condition.Resulting light-emitting component has the driving voltage that reduces and the life-span of prolongation.
In addition, light-emitting component is characterised in that organic layer remains between first electrode and the half transmitting/reflectance coating or remains between first electrode and the mixed layer, makes to have formed resonant structure.(half transmitting/reflectance coating and mixed layer can be referred to as " half transmitting/reflectance coating etc. " hereinafter).This structure has improved luminous efficiency, and makes brightness and colourity less depend on the visual angle.On organic layer, form resistive layer, and on resistive layer, form second electrode.Therefore organic layer not exclusively covers first electrode even have particle (impurity) or projection or step on first electrode, and this structure also allows second electrode suitably to apply voltage to organic layer.In addition, resistive layer prevents first electrode and second inter-electrode short-circuit, and prevents that first electrode from contacting with half transmitting/reflectance coating etc.
Light-emitting component according to the present invention is the same reliable with the light-emitting component or the organic EL of prior art type, because half transmitting/reflectance coating etc. are formed by the Mg-Ag of the organic EL that is used to prior art, and second electrode and half transmitting/reflectance coating etc. form discretely.
Description of drawings
Fig. 1 shows the schematic partial cross section figure according to the organic electroluminescence display device and method of manufacturing same of embodiment 1;
Fig. 2 A and Fig. 2 B show the schematic diagram according to organic layer in the organic electroluminescence display device and method of manufacturing same of embodiment 1 etc.;
Fig. 3 A shows the schematic partial cross section figure that how to form organic layer etc. when having impurity on according to first electrode in the organic electroluminescence display device and method of manufacturing same of embodiment 1, and Fig. 3 B shows in according to the organic electroluminescence display device and method of manufacturing same of the embodiment 1 with double-deck half transmitting/reflectance coating relative brightness and compares time history plot;
Fig. 4 shows the schematic diagram according to the setting of organic layer in the organic electroluminescence display device and method of manufacturing same of embodiment 1 etc.;
Fig. 5 A to Fig. 5 C shows the schematic partial cross section figure of first substrate of being used to summarize according to the manufacturing step of the organic electroluminescence display device and method of manufacturing same of embodiment 1 etc.;
Fig. 6 A and Fig. 6 B show the schematic partial cross section figure of first substrate of the manufacturing step that is used to summarize according to the organic electroluminescence display device and method of manufacturing same of embodiment 1 (step after the step shown in Fig. 5 C) etc.;
Fig. 7 A and Fig. 7 B show the schematic partial cross section figure of first substrate of the manufacturing step that is used to summarize according to the organic electroluminescence display device and method of manufacturing same of embodiment 1 (step after the step shown in Fig. 6 B) etc.;
Fig. 8 shows the curve chart of observed leakage current and the ratio of total current in the emulation when the total current that drives pixel changes;
Fig. 9 shows the schematic partial cross section figure according to the periphery of the organic electroluminescence display device and method of manufacturing same of embodiment 4;
Figure 10 shows at the schematic diagram according to the setting of near the extraction electrode the organic electroluminescence display device and method of manufacturing same of embodiment 4 peripheral and second electrode;
Figure 11 shows the schematic partial cross section figure according to the organic electroluminescence display device and method of manufacturing same of embodiment 5;
Figure 12 A and Figure 12 B show the schematic diagram according to the light-emitting component of embodiment 5;
Figure 13 A and Figure 13 B show the schematic diagram according to the light-emitting component of embodiment 6;
Figure 14 A and Figure 14 B show respectively the brightness that measures according to the two light-emitting component of embodiment 6 and comparing embodiment 6 and the diagrammatic sketch of the relation between the relation between the power consumption and driving voltage and the current density;
Figure 15 shows the schematic partial cross section figure according to the organic electroluminescence display device and method of manufacturing same of embodiment 7;
Figure 16 A and Figure 16 B show the schematic diagram according to organic layer in the organic electroluminescence display device and method of manufacturing same of embodiment 7 etc.;
The diagrammatic sketch of the refringence at the interface of two-layer (stacked mutually) that relation between the thickness that Figure 17 A and Figure 17 B are respectively illustrates half transmitting/reflectance coating and average reflectance and the transmissivity and refractive index are different and the relation of average reflectance; And
Figure 18 shows the schematic partial cross section figure of formed organic layer under the situation that has impurity on first electrode in the organic electroluminescence display device and method of manufacturing same of prior art.
Embodiment
With reference to following embodiment and accompanying drawing the present invention is described in more detail.These embodiment do not mean and limit the scope of the invention, but they only show numerical value and material.To launch description of the invention in the following sequence.
1. belong to the light-emitting component of the present invention's first and second execution modes and according to the general description of the manufacture method of the light-emitting component of embodiment of the present invention
2. embodiment 1 (light-emitting component that belongs to first embodiment of the invention)
3. embodiment 2 (distortion of embodiment 1)
4. embodiment 3 (another distortion of embodiment 1)
5. embodiment 4 (the another distortion of embodiment 1)
6. embodiment 5 (the another distortion of embodiment 1)
7. embodiment 6 (distortion of embodiment 5)
8. embodiment 7 (belong to the light-emitting component of second embodiment of the invention and other)
(belong to the light-emitting component of the present invention's first and second execution modes and according to the general description of the manufacture method of the light-emitting component of embodiment of the present invention)
The method that is used to make according to the light-emitting component of embodiment of the present invention depends on the condition that PVD forms first half transmitting/reflectance coating and second half transmitting/reflectance coating or forms resistive layer of carrying out.In other words, this can make the light-emitting component that belongs to the first embodiment of the invention or second execution mode depend on the condition of PVD.The expectation method that is used for PVD is the long magnetron sputtering of throwing that vacuum vapor deposition or employing are used for film formed low energy particle.The PVD of this mode is desired, because it prevents the organic layer damaged, and it forms discontinuous part (mentioning after a while).To the damage meeting of organic layer owing to leakage current causes not light emitting pixel.The light-emitting component that belongs to second embodiment of the invention is constructed to, and comprises that the material of the portion of the superiors that constitutes organic layer, the material of orlop portion that constitutes resistive layer and the mixed layer of metal are formed between organic layer and the resistive layer.This mixed layer can form first and second half transmittings/reflectance coating successively by utilizing PVD on organic layer, utilize PVD to form resistive layer then and obtain.
The light-emitting component (or its manufacture method) that belongs to first embodiment of the invention is characterised in that, first half transmitting/reflectance coating is formed by calcium (Ca), aluminium (Al), barium (Ba) or caesium (Se), and second half transmitting/reflectance coating is formed or is formed or formed by aluminium (Al) and silver (Ag) by magnesium (Mg) and calcium (Ca) by alkali metal (or alkaline-earth metal) and silver (Ag) (for example, magnesium (Mg) and silver (Ag)).Below show the preferred compositions of the material that constitutes first and second half transmittings/reflectance coating.
Calcium, magnesium and silver combination
Aluminium, magnesium and silver combination
Barium, magnesium and silver combination
Caesium, magnesium and silver combination
Lithium, magnesium and silver combination
First and second half transmittings/reflectance coating all has for example thickness of 1nm～5nm.
Under the situation that second half transmitting/reflectance coating is formed by magnesium and silver, their volume ratio should be for example Mg: Ag=5: 1～30: 1.In addition, under the situation that second half transmitting/reflectance coating is formed by magnesium and calcium, their volume ratio should be for example Mg: Ca=2: 1～10: 1.
In relating to the light-emitting component that belongs to first embodiment of the invention and the manufacture method according to the light-emitting component of embodiment of the present invention, term " half transmitting/reflectance coating of being made up of stacked mutually first half transmitting/reflectance coating and second half transmitting/reflectance coating " is understood that " film " usually.Yet, in some cases, it can be the heterogeneous mixture of the orlop portion of portion of the superiors, half transmitting/reflectance coating and the resistive layer of organic layer, perhaps it can be the mixture of the portion of the superiors of organic layer, magnesium (constituting half transmitting/reflectance coating) and resistive layer, and wherein silver-colored distribution of particles therein.
On the other hand, the light-emitting component that belongs to second embodiment of the invention can comprise with alkaline-earth metal (as, calcium (Ca), magnesium (Mg) and barium (Ba)) be the metal of example.This metal also can comprise silver (Ag), aluminium (Al) and caesium (Se).
Can carry out following restriction to the light-emitting component that belongs to first or second preferred implementation and according to the manufacture method of the light-emitting component of embodiment of the present invention.Resistive layer is 1 * 10 by resistivity
2Ω m～1 * 10
6Ω m (or 1 * 10
4Ω m～1 * 10
8Ω m), be preferably 1 * 10
4Ω m to 1 * 10
5Ω m (or 1 * 10
6Ω m to 1 * 10
7Ω m) material is made, and the resistive layer of organic layer top has the thickness of 0.1 μ m to 2 μ m, is preferably the thickness of 0.3 μ m to 1 μ m.Preferably, resistive layer should be by such as niobium oxide (Nb
2O
5), titanium oxide (TiO
2), molybdenum oxide (MoO
2, MoO
3), tantalum oxide (Ta
2O
5), mixture, the silica (SiO of mixture, titanium oxide and the zinc oxide (ZnO) of hafnium oxide (HfO), IGZO, niobium oxide and titanium oxide
2) and the mixture of tin oxide (SnO) and the oxide semiconductor of their combination make.The determined suitable resistance of voltage drop that in resistive layer, occurs when incidentally, the material of formation resistive layer should have according to driven light-emitting element or driving organic EL.The representative value of voltage drop is 0.05 volt to 1.0 volts.
Can also carry out following restriction to the light-emitting component that belongs to first or second preferred implementation and according to the manufacture method of the light-emitting component of embodiment of the present invention.Resistive layer is by forming from mutual in order stacked first resistive layer and second resistive layer of organic layer side.Second resistive layer has the resistivity than the first resistance floor height.In addition, resistive layer is made up of first resistive layer, second resistive layer and the 3rd resistive layer of the top that is layered in another from the organic layer side in order.Second resistive layer has the resistivity greater than first resistive layer and the 3rd resistive layer.The first and the 3rd resistive layer can be by any formation the in the mixture of the mixture of mixture, titanium oxide and the zinc oxide of zinc oxide, tin oxide, niobium oxide, titanium oxide, molybdenum oxide, tantalum oxide, niobium oxide and titanium oxide and silica and tin oxide.When keeping partial pressure of oxygen low, form these layers.Second resistive layer can be by any formation the in the mixture of the mixture of mixture, titanium oxide and the zinc oxide of niobium oxide, titanium oxide, molybdenum oxide, tantalum oxide, niobium oxide and titanium oxide and silica and tin oxide.First, second and the 3rd resistive layer should have such resistivity R respectively
1(Ω m), R
2(Ω m) and R
3(Ω m):
1×10
-3≤R
1/R
2≤1×10
-1
1×10
-3≤R
3/R
2≤1×10
-1
Resistive layer in the sandwich construction provides the good contact between half transmitting/reflector and the resistive layer, thereby has reduced the voltage drop in the resistive layer, and has reduced driving voltage.
Incidentally, under the situation that resistive layer is made up of first resistive layer and second resistive layer of stepped construction or under the situation that resistive layer is made up of first resistive layer, second resistive layer and the 3rd resistive layer of stepped construction, mixed layer can comprise the material that constitutes first resistive layer.
Can also carry out following restriction to the light-emitting component that belongs to first or second preferred implementation and according to the manufacture method of the light-emitting component of embodiment of the present invention.Resistive layer is made up of first resistive layer and second resistive layer of stepped construction at least, and first resistive layer is by having refractive index n
1Material make, second resistive layer is by having refractive index n
2Material make, and the portion of the superiors of organic layer is by having refractive index n
0Material make, make:
-0.6≤n
0-n
1≤-0.4
0.4≤n
1-n
2≤0.9
(paying attention to point under the situation aspect the efficient)
-0.2≤n
0-n
1≤0.2
0.2≤n
1-n
2≤0.4
(paying attention to point under the situation aspect the visual angle)
Can also carry out following restriction to the light-emitting component that belongs to first or second preferred implementation and according to the manufacture method of the light-emitting component of embodiment of the present invention.The light that is produced by luminescent layer is resonated between first interface (between first electrode and the organic layer) and second contact surface (between half transmitting/reflectance coating and the organic layer) [the 3rd or the 4th interface of perhaps mentioning after a while], make a part of light from the second electrode outgoing.In this case, first interface should be apart from the maximum luminous position OL of luminescent layer
1Optical distance, and second contact surface (the 3rd or the 4th interface of perhaps mentioning after a while) should be apart from the maximum luminous position OL of luminescent layer
2Optical distance, make and to satisfy following formula (1-1) and (1-2).Alternatively, first interface should be apart from the optical distance of second contact surface (the 3rd or the 4th interface of perhaps mentioning after a while) OL, first interface and second contact surface (the 3rd or the 4th interface of perhaps mentioning after a while) with total phase deviation be the Φ radian [wherein,-2 π＜Φ≤0] mode reflect the light that produces by luminescent layer, and luminescent layer produces the light that spectrum has the peak-peak wavelength X that satisfies following relation:
0.7≤{ (2 * OL)/λ+Φ/(2 π) }≤1.3 or
-0.3≤{(2×OL)/λ+Φ/(2π)}≤0.3
By first interface and second contact surface (etc.) interference of the light determined or the condition of resonance make brightness and colourity in the extreme little to the dependence at visual angle.
0.7{-Φ
1/(2π)+m
1}≤2×OL
1/λ≤1.2{-Φ
1/(2π)+m
1}...(1-1)
0.7{-Φ
2/(2π)+m
2}≤2×OL
2/λ≤1.2{-Φ
2/(2π)+m
2}...(1-2)
Wherein,
λ: the peak-peak wavelength of the spectrum of the light that luminescent layer produces,
Φ
1: occur in first at the interface the catoptrical phase pushing figure (radian)
[wherein ,-2 π＜Φ
1≤ 0]
Φ
2: occur in the catoptrical phase pushing figure (radian) that second contact surface (or the 3rd or the 4th interface of mentioning after a while) locates [wherein ,-2 π＜Φ
2≤ 0], and
(m
1, m
2) value be (0,0), (1,0) or (0,1)
As mentioned above, the interface between first electrode and the organic layer is called as " first interface ".Interface between half transmitting/reflectance coating etc. and the organic layer is called as " second contact surface ".Interface between half transmitting/reflectance coating etc. and the resistive layer is called as " the 3rd interface ".Interface between first resistive layer and second resistive layer is called as " the 4th interface ".The light-emitting component that belongs to first embodiment of the invention is designed to, and the light that is produced by luminescent layer is resonated between first interface and second contact surface; Yet, exist in the so thin wide part that produces by luminescent layer when they have high average transmittance that makes such as half transmitting/reflectance coating and see through the situation of half transmitting/reflectance coating etc.In this case, the light that is produced by luminescent layer is resonated between first interface and the 3rd interface.At resistive layer is under the situation of sandwich construction, makes the light that produced by luminescent layer between first interface and the second contact surface, resonating between first interface and the 3rd interface or between first interface and the 4th interface.
Can be to belonging to of the present invention first or the light-emitting component of second preferred implementation and carry out following restriction according to the manufacture method of the light-emitting component of embodiment of the present invention.(these light-emitting components are collectively referred to as " light-emitting component of the present invention etc. " hereinafter)
In the part of light mode, the light that is produced by luminescent layer is resonated between first interface and second contact surface (perhaps the 3rd or the 4th interface) from the second electrode outgoing.The light that is produced by luminescent layer has the spectrum that the peak-peak wavelength is 600nm to 650nm.Organic layer on first electrode has 1.1 * 10
-7M to 1.6 * 10
-7The thickness of m.(resulting light-emitting component emission red light, and it is called as red light-emitting component or emitting red light organic EL)
Light-emitting component of the present invention etc. can be restricted to the light that is produced by luminescent layer is resonated between first interface and second contact surface (perhaps the 3rd or the 4th interface), so that a part of light is from the second electrode outgoing.The light that is produced by luminescent layer has the spectrum that the peak-peak wavelength is 500nm to 550nm.Organic layer on first electrode has 9 * 10
-8M to 1.3 * 10
-7The thickness of m.(resulting light-emitting component transmitting green light, and it is called as green luminousing element or green emitting organic EL)
Light-emitting component of the present invention etc. can be restricted to the light that is produced by luminescent layer is resonated between first interface and second contact surface (perhaps the 3rd or the 4th interface), so that a part of light is from the second electrode outgoing.The light that is produced by luminescent layer has the spectrum that the peak-peak wavelength is 430nm to 480nm.Organic layer on first electrode has 6 * 10
-8M to 1.1 * 10
-7The thickness of m.(resulting light-emitting component emission blue light, and it is called as blue light emitting device or blue-light-emitting organic EL)
The aforementioned light-emitting component that belongs to the present invention's first preferred implementation can be used as the part of organic electroluminescence display device and method of manufacturing same (organic EL display), wherein organic electroluminescence display device and method of manufacturing same comprise be layered in order another on a plurality of light-emitting components (or organic electroluminescent device or organic EL), each light-emitting component includes:
(a) first electrode,
(b) insulating barrier has opening, and this opening allows first electrode to expose by the bottom of opening,
(c) organic layer has the luminescent layer of being made by luminous organic material, and on the part that first electrode exposes in the bottom of opening, organic layer extends to the part that insulating barrier surrounds opening from this part,
(d) half transmitting/reflectance coating (being made up of first half transmitting that sets gradually from the organic layer side in the stepped construction/reflectance coating and second half transmitting/reflectance coating) is formed on the organic layer at least,
(e) resistive layer covers half transmitting/reflectance coating, and
(f) second electrode is formed on the resistive layer,
First electrode reflects the light from luminescent layer,
The second electrode transmission is from the light of luminescent layer,
Half transmitting/reflectance coating on the organic layer has the average film thickness of 1nm to 6nm, and
The part of half transmitting/reflectance coating on dielectric film is discontinuous at least in part.
The aforementioned light-emitting component that belongs to the present invention's second preferred implementation can be used as the part of organic electroluminescence display device and method of manufacturing same (organic EL display), wherein organic electroluminescence display device and method of manufacturing same comprises a plurality of light-emitting components (or organic electroluminescent device or organic EL) that are layered in order on another, and each light-emitting component includes:
(a) first electrode,
(b) insulating barrier has opening, and this opening allows first electrode to expose by the bottom of opening,
(c) organic layer has the luminescent layer of being made by luminous organic material, and on the part that first electrode exposes in the bottom of opening, organic layer extends to the part that insulating barrier surrounds opening from this part,
(d) resistive layer covers organic layer, and
(e) second electrode is formed on the resistive layer,
Between organic layer and resistive layer, form mixed layer, this mixed layer comprise the portion of the superiors that forms organic layer material, form the material and the metal of the orlop portion of resistive layer,
First electrode reflects the light from luminescent layer,
The second electrode transmission is from the light of luminescent layer, and
The part of mixed layer on insulating barrier is discontinuous at least in part.
Above-mentioned organic EL display is characterised in that the part of half transmitting/reflectance coating on dielectric film is discontinuous at least in part.More specifically, half transmitting/reflectance coating can be partly continuous or discontinuous with the part of half transmitting/reflectance coating on organic layer in the part on the dielectric film.Exist half transmitting/reflectance coating at some organic ELs of the part on the dielectric film with the part partial continuous of half transmitting/reflectance coating on organic membrane.Have other organic ELs except that above-mentioned, wherein, half transmitting/reflectance coating is discontinuous with the part of half transmitting/reflectance coating on organic membrane in the part on the dielectric film.
Organic EL display can be in difference aspect the layout pattern of organic EL.Pattern can be divided into strip, twill-like, triangular shape and rectangular-shaped.
Can also carry out following restriction to the light-emitting component that belongs to first or second preferred implementation and according to the manufacture method of the light-emitting component of embodiment of the present invention.Exist on first electrode under the situation of impurity or projection, half transmitting/reflectance coating be not formed on impurity or projection around, but resistive layer be present in half transmitting/reflectance coating at the part of impurity and projection periphery and first electrode below the impurity or between the part of projection bottom.Impurity (particle) is easy to be attached to first electrode when first electrode forms or during transporting.By comparison, projection is easy to occur when forming first electrode.
Can also carry out following restriction to the light-emitting component that belongs to first or second preferred implementation and according to the manufacture method of the light-emitting component of embodiment of the present invention.First electrode has and is not less than 50% average reflectance, preferably is not less than 80%.Half transmitting/reflectance coating has 50% to 97% average transmittance, is preferably 60% to 97%.
As material (light reflecting material) according to first electrode in the light-emitting component of embodiment of the present invention (light reflecting electrode), if first electrode as positive pole, is then selected suitable material from following: platinum (Pt), gold (Au), silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co) and tantalum (Ta) and their alloy (copper (Cu) and residue such as palladium that comprises 0.3wt% to 1wt% (Pd) and 0.3wt% to 1wt% are the Ag-Pd-Cu alloy and the Al-Nd alloy of silver) with high work content.Under the situation that first electrode is formed by aluminium (Al) or aluminium alloy (have low work content and be the electric conducting material with high reflectance), suitable hole injection layer (thereby improving hole injection efficiency) need be provided, make the electrode of winning as anodal.For example, first electrode should have the thickness of 0.1 μ m to 1 μ m.Alternatively, first electrode can be with by the dielectric multilayer film or have the optical reflection film of aluminium (Al) of high reflectance and the stepped construction of forming at the transparent conductive material (such as tin indium oxide (ITO) and indium zinc oxide (IZO)) of brilliance aspect the injection efficiency of hole forms.On the other hand, if first electrode is used as negative pole, then it should preferably be formed by the electric conducting material with low work content and high reflectance.Yet, being provided with the suitable electron injecting layer that is used to improve the electronics injection efficiency if having the electric conducting material (as the material of first electrode) of high reflectance, first electrode can be used as negative pole.
As material (light reflecting material) according to second electrode in the light-emitting component of embodiment of the present invention, if second electrode is as negative pole, the light that sends from transmission and have low work content then so that they allow will select suitable material the metal or alloy of electron injecting organic layer efficiently.Their example comprises magnesium-Yin, aluminium, silver, calcium and strontium.Can also be formed by so-called transparent electrode material, such as ITO and IZO, it is provided with the suitable electron injecting layer that is used to improve the electronics injection efficiency.Second electrode should have 2 * 10
-9M to 5 * 10
-8The thickness of m is preferably 3 * 10
-9M to 2 * 10
-8M, more preferably 5 * 10
-9M to 1 * 10
-8M.Alternatively, second electrode can be provided with the bus electrode of being made by low electrical resistant material (auxiliary electrode), makes second electrode have low resistance generally.If second electrode is as anodal, then it should be preferably by the only transparent and material that have high work content value that is sent is formed.
Any that can be by the following method forms first electrode and second electrode: electron-beam vapor deposition, heated filament vapour deposition, vacuum vapor deposition, sputter, chemical vapor deposition (CVD), ion plating and etched combination, silk-screen, ink jet printing, metal mask printing, plating, electroless plating, act are from, laser wearing and tearing and sol-gel process.Printing and galvanoplastic can directly form first and second electrodes with desired pattern.At first forming under the situation that organic layer forms first or second electrode then, vacuum moulding machine or MOCVD are used in expectation, and this is because because its lower particle energy and little to the damage of organic layer.From form organic layer to the step that forms electrode should with the environment of isolated from atmosphere under carry out, to prevent that organic layer is by the moisture deterioration in the atmosphere.Second electrode can be electrically connected or not be electrically connected with it with half transmitting/reflectance coating etc.
Preferably, should form resistive layer, first resistive layer, second resistive layer and the 3rd resistive layer by sputter, CVD or in the ion plating of brilliance aspect the covering performance.
First electrode and half transmitting/reflectance coating absorb a part of incident light and reflect remaining incident light, thereby cause catoptrical phase deviation.Can calculate phase deviation Φ according to the real part and the imaginary part of the complex refractivity index (measuring) of the material that constitutes first electrode and half transmitting/reflectance coating by ellipsometry
1And Φ
2Amount.(for example, referring to " Principles of Optics ", Max Born and Emil Wolf, 1974 (Pergamon Press)).Incidentally, ellipsometry can also be used to measure the refractive index of organic layer, second electrode and other layers.
Organic layer has the luminescent layer that is formed by luminous organic material.More specifically, it can be made up of hole transmission layer, luminescent layer and the electron transfer layer of stepped construction; It can be by the hole transmission layer of stepped construction and also forms as the luminescent layer of electron transfer layer; Perhaps it can be made up of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer of stepped construction.If term " cascade unit (tandem unit) " is used to unified represent electron transfer layer, luminescent layer, hole transmission layer and hole injection layer, then organic layer can be made up of the first order receipts or other documents in duplicate unit that is provided with in order, articulamentum and second level receipts or other documents in duplicate unit.(this is the two rank cascade structure).In addition, organic layer can have the above cascade structure (this is three level cascade structures) of three levels.In these cases, luminous color can become redness, green and blue by each cascade unit, make organic layer emit white light on the whole.
Organic layer can form by physical vapour deposition (PVD) (CVD) (such as vacuum vapor deposition), printing (such as silk-screen and ink jet printing), laser transfer and coating.(laser transfer is included on the transfer substrate and forms laser absorption layer and organic layer (stepped construction), the layer after utilizing laser radiation stacked, thus organic layer is separated with laser absorption layer, and the organic layer that separates thus of transfer printing).The opening that can pass with the material that is used in deposition in the metal mask is carried out vacuum moulding machine in the mode that forms organic layer.
According to the present invention, hole transmission layer (hole accommodating layer) and electron transfer layer (electronics accommodating layer) should preferably have essentially identical thickness.Alternatively, the latter can be thicker than the former a little.In this case, can be to the enough electronics of luminescent layer supply, thus luminous efficiently under low driving voltage.In other words, be constructed to make hole accommodating layer (being thinner than electron transfer layer) to be set between electrode (or anodal) and the luminescent layer according to the light-emitting component of embodiment of the present invention, making to provide more hole.This utilizes sufficient charge carrier supply to realize the balance supply of hole and electronics, thereby helps high-luminous-efficiency.Owing to the charge carrier of balance, has the life-span of prolongation according to the light-emitting component of embodiment of the present invention.
According to the present invention, on first electrode or above form a plurality of light-emitting components or organic EL.First substrate can be by high strain-point glass, soda-lime glass (Na
2OCaOSiO
2), Pyrex (Na
2OB
2O
3SiO
2), forsterite (2MgOSiO
2) and lead glass (Na
2OPbOSiO
2) in any substrate of making.It can also comprise various glass substrates, quartz base plate and silicon substrate, and each all has formation dielectric film thereon.It can also comprise the plastic base of being made by polymeric material (such as polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyethersulfone resin (PES), polyimides, Merlon and PETG (PET)) (form of plate or flexible sheets or film).Previous materials can also be used for second substrate.First and second substrates can be formed by identical or different material.Yet, under the situation of the organic EL display of the bottom-emission type of mentioning after a while, require first substrate only transparent to from the light-emitting component outgoing.
In organic EL display, first electrode is arranged on the interlayer insulating film, and wherein interlayer insulating film covers the drive division that is formed on the light-emitting component on first substrate.The drive division of light-emitting component is made up of one or more thin-film transistors (TFT).TFT is electrically connected to first electrode by the contact plug that is formed in the interlayer insulating film.Interlayer insulating film is by SiO
2The material of class is (such as SiO
2, BPSG, PSG, BSG, AsSG, PbSG, SiON, SOG (spin-coating glass), low-melting glass and glass paste) and the material of SiN class, the arbitrary material in the insulating resin (such as polyimides) form.They can use separately or be used in combination mutually.Interlayer insulating film can form by any already known processes (such as CVD, coating, sputter and printing).Under the situation of the organic EL display of the bottom-emission type of mentioning after a while, interlayer insulating film should be by forming the only material transparent of coming self-emission device, and the drive division of light-emitting component should form in the mode of the light that do not block self-emission device.It is smooth requiring the insulating barrier on the interlayer insulating film, keeps out by the deterioration from the moisture of organic layer, and is suitable for high brightness.Therefore, it should be formed by the insulating material with inferior grade moisture absorption (such as polyimide resin).If second electrode is provided with bus electrode (auxiliary electrode), then bus electrode should preferably be positioned as it is not incident upon its shade on the insulating barrier.
Organic EL display can have second electrode that is positioned at second electrode top.The organic EL display of this structure is called as " organic EL display of top emission type " hereinafter sometimes.On the other hand, organic EL display can have first substrate that is positioned at second electrode below.The organic EL display of this structure is called as " organic EL display of bottom-emission type " hereinafter sometimes.The organic EL display of top emission type can be constructed to, and second electrode and second substrate maintain diaphragm and the adhesive layer (sealant) that is provided with from the second electrode side between them.Diaphragm should be preferably by the only transparent and any material fine and close waterproof from luminescent layer is formed.The representative instance of this material comprises amorphous silicon (α-Si), amorphous silicon carbonization thing (α-SiC), amorphous silicon nitride (α-Si
1-XN
X), amorphous silicon oxide (α-Si
1-yO
y), amorphous carbon (α-C), amorphous silicon nitrogen oxide (α-SiON) and Al
2O
3Adhesive layer (sealant) should be formed by any hot setting adhesive (such as acryloid cement, epobond epoxyn, urethane adhesives, silicon resin adhesive and cyanoacrylate adhesive) or UV cure adhesive.Incidentally, the organic EL display of bottom-emission type can also with second substrate orientation above first electrode and first electrode and second substrate between them, keep the diaphragm that is provided with from the first electrode side and the mode of adhesive layer (as mentioned above) to construct.
Preferably, as mentioned above, should above organic layer, be provided with insulation or conductive protective film so that itself and moisture are isolated.Diaphragm can form by vacuum vapor deposition (having low particle energy) or to the CVD that the layer of below has a little effect.In addition, diaphragm should preferably form at normal temperatures, to prevent the accept a surrender deterioration of low-light level of organic layer, perhaps forms under any condition to the minimum stress of diaphragm to prevent that it from peeling off.In addition, the hard mode that preferably is not exposed to atmosphere with the electrode of previous formation of diaphragm forms.By this way, prevent that organic layer is by moisture in the atmosphere and oxygen deterioration.In addition, diaphragm should be preferably by forming from the light transmissive any material more than 80% of organic layer.The inorganic amorphous insulating material of having listed above the example of this material comprises.They do not form particle and formation has the low good protection film of water penetration.Diaphragm can also be formed by the transparent conductive material such as ITO and IZO, so that it has conductivity.
Be used as under the situation of organic EL colour display device in the organic EL display meaning, each organic EL of organic EL display all constitutes sub-pixel.A pixel is made up of three sub-pixels sending ruddiness (having red light-emitting component), green glow (having green luminousing element) and blue light (having blue light emitting device) respectively.Therefore, if organic EL display is made up of many organic ELs of N * M, then pixel count is (N * M)/3.Organic EL display can also be used as the backlight of liquid crystal indicator or have the luminaire of planar light source.
Transmission comes first or second substrate of the light of self-emission device can be provided with formation colored filter or photomask thereon as required.
As follows, the resistance value that constitutes each resistive layer of redness, green and blue light emitting device can be differing from each other according to condition.
R
B＞R
G
R
B＞R
R
Redness, green and the blue light emitting device of resistive layer are realized said structure separately to have (content of the material of thickness or material or realization conductivity is different) by structure.
Organic EL display can be provided with the extraction electrode that is used for second electrode is connected to external circuit in its outer peripheral areas.Outer peripheral areas is represented with the viewing area image frame on every side of the big central area that occupies organic EL display similarly regional.Extraction electrode is attached to first or second electrode.It can be formed by the refractory metal such as titanium (Ti), molybdenum (Mo), tungsten (W) and tantalum (Ta).Connection between second electrode and the extraction electrode can assign to realize by the extension that second electrode is formed on the extraction electrode.Can be to form extraction electrode with the above-mentioned identical mode of first and second electrodes that is used for.
The organic EL display of embodiment 1 or the embodiment 2 to embodiment 7 that mentions after a while is for carrying out the colored active array type that shows.It is by second electrode and the luminous top emission type of second substrate.The organic EL display of embodiment 1 or the embodiment 2 to embodiment 7 that mentions after a while has a plurality of light-emitting components (organic EL particularly) 10.The quantity of light-emitting component is for example N * M=2800 * 540.Incidentally, a light-emitting component (or organic EL) 10 constitutes a sub-pixel.Therefore, organic EL display has the (pixel of N * M)/3.Here, a pixel is made up of three sub-pixels sending ruddiness, green glow and blue light respectively.
The light-emitting component of embodiment 1 (or organic EL) is by being layered in forming with the lower part on another in order.
(A) first electrode 21,
(B) organic layer 23, have the luminescent layer 23A of luminous organic material,
(C) half transmitting/reflectance coating,
(D) resistive layer 50, and
(E) second electrode 22.
21 reflections of first electrode are from the light of luminescent layer 23A.22 transmissions of second electrode are from the light of luminescent layer 23A.Half transmitting/reflectance coating comprises from the first stacked in order half transmitting of organic layer 23 sides/reflectance coating 41 and second half transmitting/reflectance coating 42.Half transmitting/reflectance coating on the organic layer 23 has the average thickness of 1nm to 6nm.
The organic EL display of embodiment 1 has a plurality of organic ELs, and each all has with the lower part.
(a) first electrode 21,
(b) insulating barrier 24, and have opening 25, the first electrodes 21 and expose from the bottom of opening 25,
(c) organic layer 23, have the luminescent layer 23A that is made by luminous organic material, and extend to the part that insulating barrier 24 surrounds opening 25 from the part that first electrode 21 exposes in the bottom of opening 25,
(d) half transmitting/reflectance coating is formed on the organic layer 23 at least, comprises from the first stacked in order half transmitting of organic layer 23 sides/reflectance coating 41 and second half transmitting/reflectance coating 42,
(e) resistive layer 50, cover half transmitting/reflectance coating, and
(f) second electrode 22 is formed on the resistive layer 50.
21 reflections of first electrode are from the light of luminescent layer 23A.22 transmissions of second electrode are from the light of luminescent layer 23A.Half transmitting/reflectance coating on the organic layer 23 has the average thickness of 1nm to 6nm.The part of half transmitting/reflectance coating on insulating barrier 24 is discontinuous at least in part.
Being shown as it by mutually stacked first half transmitting/reflectance coating 41 and half transmitting/reflectance coating that second half transmitting/reflectance coating 42 is formed in Fig. 2 A and Fig. 2 B, Fig. 7 A and Fig. 7 B, Figure 12 A and Figure 12 B and Figure 13 A and Figure 13 B is individual layer.First half transmitting/the reflectance coating 41 and second half transmitting/reflectance coating 42 will be collectively referred to as " half transmitting/reflectance coating 40 " hereinafter.
In embodiment 1 or embodiment 2 to 5 that mentions after a while and embodiment 7, first electrode 21 is as anodal, and second electrode 22 is as negative pole.More specifically, first electrode 21 has the thickness of 0.2 μ m and is made by the transparent reflecting material such as the Al-Nd alloy.Second electrode 22 has the thickness of 0.1 μ m and by making such as the transparent conductive material of ITO and IZO.First half transmitting/reflectance coating 41 has the thickness of 2nm and is made by calcium.Second half transmitting/reflectance coating 42 has the thickness of 3nm and is made by the electric conducting material that contains magnesium (such as by volume ratio being the Mg-Al alloy that 10: 1 Mg and Ag form).First electrode 21 of shape one patterned with expectation forms with etched the combination by vacuum moulding machine.On the other hand, second electrode 22 and half transmitting/reflectance coating 40 form by the vacuum moulding machine with low-yield particle.Second electrode 22 and half transmitting/reflectance coating 40 are not patterned, but keep the form of monolithic.Incidentally, between organic layer 23 and half transmitting/reflectance coating 40, form the electron injecting layer (not shown) of the thick LiF of 0.3nm.Following table 2 shows the refractive index of first electrode 21 and second electrode 22, the reflectivity of first electrode 21 and the transmissivity of half transmitting/reflectance coating 40.Incidentally, measurement is to carry out under the wavelength of 530nm.
In embodiment 1 or the embodiment 2 to 7 that mentions after a while, insulating barrier 24 is by being that the polyimide resin with insulating material of low water absorption forms, so that it has good flatness and prevent that organic layer 23 is subjected to the moisture deterioration, thereby keeps high brightness.Although organic layer 23 is made up of hole transmission layer and luminescent layer (it is also as electron transfer layer), it can be represented by individual layer in the accompanying drawings.
In embodiment 1 or the embodiment 2 to 7 that mentions after a while, be arranged on the interlayer insulating film 16 (more specifically, upper strata interlayer insulating film 16B) that forms by SiO2 by CVD as first electrode 21 of a part of organic EL.This interlayer insulating film 16 covers the drive division of the organic EL on first substrate 11 that is formed on soda-lime glass.The drive division of organic EL is made up of a plurality of TFT.Each TFT is electrically connected to first electrode 21 by contact plug (contact plug) 18, distribution 17 and the contact plug 17A that is formed in the interlayer insulating film 16 (more specifically, upper strata interlayer insulating film 16B).Incidentally, accompanying drawing shows a TFT of a drive division that is used for organic EL.TFT is made up of grid 12 (being formed on first substrate 11), gate insulating film 13 (being formed on first substrate 11 and the grid 12), source-drain region 14 (being arranged in the semiconductor layer that is formed on the gate insulating film 13) and channel formation region 15 (corresponding to the part of semiconductor layer above grid 12).Incidentally, although the TFT shown in the figure is a bottom gate type, it can also be a top gate type.The grid 12 of TFT is connected to the scanning circuit (not shown).
In embodiment 1 or the embodiment 2 to 7 that mentions after a while, second electrode 22 is coated with diaphragm 31, and it is the amorphous silicon (α-Si that forms by plasma CVD
1-xN
x) dielectric film and be used to prevent that organic layer 23 is subjected to the influence of moisture.Second substrate 33 of soda-lime glass is arranged on diaphragm 31 tops.The diaphragm 31 and second substrate 33 join to together by the adhesive layer 32 of acryloid cement.Following table 2 shows the refractive index of diaphragm 31 and adhesive layer 32.Measurement is to carry out under the wavelength of 530nm.
In following table 1, summed up the detailed structure of the light-emitting component of embodiment 1.
Table 1
| |
Soda-lime |
| Adhesive layer | |
| 32 | |
| Diaphragm | |
| 31 | SiN xLayer (5 μ m are thick) |
| Second electrode (negative pole) 22 | ITO layer (0.1 μ m is thick) |
| |
Nb 2O 5Layer (0.5 μ m is thick) |
| Half transmitting/reflectance coating | |
| Second half transmitting/ |
Mg-Ag film (3nm is thick) |
| First half transmitting/ |
Ca film (2nm is thick) |
| Electron injecting layer | LiF layer (0.3nm is thick) |
| |
Mention after a while |
| First electrode (positive pole) 21 | Al-Nd layer (0.2 μ m is thick) |
| |
SiO 2Layer |
| TFT | The drive division of organic |
| First substrate | |
| 11 | Soda-lime glass |
Table 2
Although the part 40A of half transmitting/reflectance coating on insulating barrier 24 is discontinuous to small part, half transmitting/reflectance coating partly is connected to the part 40B of half transmitting/reflectance coating on organic layer 23 at the part 40A on the insulating barrier 24.In some organic ELs, half transmitting/reflectance coating is not attached to the part 40B of half transmitting/reflectance coating on organic layer 23 at the part 40A on the insulating barrier 24.Alternatively, in some organic ELs, half transmitting/reflectance coating 40 partly is connected to the part 40B of half transmitting/reflectance coating 40 on organic layer 23 at the part 40A on the insulating barrier 24, and in other organic EL, half transmitting/reflectance coating 40 is not attached to the part 40B of half transmitting/reflectance coating 40 on organic layer 23 at the part 40A on the insulating barrier 24.Incidentally, half transmitting/reflectance coating 40 has the little average film thickness than the part 40B of half transmitting/reflectance coating 40 on organic layer 23 at the part 40A on the insulating barrier 24.Therefore, the part 40B of half transmitting/reflectance coating 40 on organic layer 23 should have the average film thickness of 1nm to 6nm, thereby makes the part 40A of half transmitting/reflectance coating 40 on insulating barrier 24 be in continuous state scarcely.
The light that sends from luminescent layer 23A is resonated between first interface 26 (between first electrode 21 and the organic layer 23) and second contact surface 27 (between half transmitting/reflectance coating 40 and the organic layer 23), and make a part of light pass half transmitting/reflectance coating 40 and second electrode 22 and outgoing.
In embodiment 1 or the embodiment 2 to 6 that mentions after a while, light-emitting component has and satisfies following formula (1-1) and following parameter (1-2).Distance L between the maximum luminous position of (between first electrode 21 and the organic layer 23) first interface 26 and luminescent layer 23A
1With optical distance OL
1Distance L between the maximum luminous position of (between half transmitting/reflectance coating 40 and the organic layer 23) second contact surface 27 and luminescent layer 23A
2With optical distance OL
2(referring to Fig. 2 A and Fig. 2 B)
0.7{-Φ
1/(2π)+m
1}≤2×OL
1/λ≤1.2{-Φ
1/(2π)+m
1}...(1-1)
0.7{-Φ
2/(2π)+m
2}≤2×OL
2/λ≤1.2{-Φ
2/(2π)+m
2}...(1-2)
Wherein,
λ: the peak-peak wavelength of the spectrum of the light that luminescent layer 23A produces,
Φ
1: the catoptrical phase pushing figure (radian) that occurs in 26 places, first interface
[wherein ,-2 π＜Φ
1≤ 0]
Φ
2: the catoptrical phase pushing figure (radian) that occurs in second contact surface 27 places
[wherein ,-2 π＜Φ
2≤ 0], and
(m
1, m
2) value in embodiment 1 or the embodiment 2 to 6 that mentions after a while, be (0,0).
In embodiment 1 or the embodiment 2 to 6 that mentions after a while, light-emitting component has the following parameter that satisfies following formula.
Optical distance OL between (between first electrode 21 and the organic layer 23) first interface 26 and (between half transmitting/reflectance coating 40 and the organic layer 23) second contact surface 27.The catoptrical phase pushing figure Φ (radian) that the light that is produced by luminescent layer 23A is taken place by first interface 26 and second contact surface 27 reflex times.
The peak-peak wavelength X of the spectrum of the light that produces by luminescent layer 23A.
-0.3≤{(2×OL)/λ+Φ/(2π)}≤0.3
Wherein ,-2 π＜Φ≤0.
In embodiment 1 or the embodiment 2 to 7 that mentions after a while, each organic layer 23 all is made up of red light emitting layer (in the emitting red light organic EL that constitutes the emitting red light sub-pixel), green light emitting layer (in the green emitting organic EL that constitutes the green emitting sub-pixel) and blue light-emitting layer (in the blue-light-emitting organic EL of formation blue-light-emitting sub-pixel).A plurality of organic ELs are arranged with the pattern of strip, twill-like, triangle or rectangle.
Light-emitting component as the emitting red light organic EL resonates the light from luminescent layer 23A between first interface 26 and second contact surface 27, make a part of light from 22 outgoing of second electrode.Has the spectrum that the peak-peak wavelength is 600nm to 650nm (being typically 620nm in embodiment 1 or the embodiment 2 to 7 that mentions after a while) from the light of luminescent layer 23A.
More specifically, the emitting red light organic layer is constructed to as shown in table 3 below.At the interface (referring to Fig. 2 A) of maximum luminous position between electron transfer layer 23C and luminescent layer 23A.At table 3 or in the table 4 and table 5 mentioned after a while, these layers are set to along with they approach first electrode downwards and more.
Table 3
In addition, the light-emitting component that is used as the green emitting organic EL resonates the light from luminescent layer 23A between first interface 26 and second contact surface 27, make a part of light from 22 outgoing of second electrode.Has the spectrum that the peak-peak wavelength is 500nm to 550nm (being typically 530nm in embodiment 1 or the embodiment 2 to 7 that mentions after a while) from the light of luminescent layer 23A.
More specifically, the green emitting organic layer is constructed to as shown in table 4 below.At the interface (referring to Fig. 2 B) of maximum luminous position between hole transmission layer 23B and luminescent layer 23A.
Table 4
In addition, the light-emitting component that is used as the blue-light-emitting organic EL resonates the light from luminescent layer 23A between first interface 26 and second contact surface 27, make a part of light from 22 outgoing of second electrode.Has the spectrum that the peak-peak wavelength is 430nm to 480nm (being typically 460nm in embodiment 1 or the embodiment 2 to 7 that mentions after a while) from the light of luminescent layer 23A.
More specifically, the blue-light-emitting organic layer is constructed to as shown in table 5 below.At the interface (referring to Fig. 2 B) of maximum luminous position between hole transmission layer 23B and luminescent layer 23A.
Table 5
In embodiment 1 or the embodiment 3 to 7 that mentions after a while, resistive layer 50 is by having 1 * 10
4Ω m (1 * 10
6Niobium oxide (the Nb of resistivity Ω m)
2O
5) form, and the resistive layer 50 of organic layer 23 tops has the thickness of 0.5 μ m.The resistive layer 50 of above-mentioned explanation has voltage drop shown below.Second electrode 22 and resistive layer 50 have following specification.
[second electrode 22]
Resistivity (ρ
1): 3.0 * 10
-4Ω m
Thickness (d
1): 0.1 μ m
Current density (J in second electrode 22
1): 10mA/cm
2
[resistive layer 50]
Resistivity (ρ
2): 1.0 * 10
4Ω m to 1.0 * 10
6Ω m
Thickness (d
2): 0.5 μ m
Current density (J in the resistive layer 50
2): 10mA/cm
2
The sheet resistor of second electrode 22: (ρ
1/ d
1)=30 Ω/
The sheet resistor of resistive layer 50: (ρ
2/ d
2)=2 * 10
8Ω/ to 2 * 10
10Ω/
Voltage drop=ρ in second electrode 22
1* d
1* J
1=3.0 * 10
-11V
Voltage drop=ρ in the resistive layer 50
2* d
2* J
2=5mV to 500mV
As mentioned above, at resistive layer 50 by Nb
2O
5Under the situation about forming, estimate that the voltage drop maximum in the resistive layer 50 is about 0.5V.This voltage drop does not have high to the degree that causes the problem that drives organic EL or organic EL display aspect.
The organic layer of launching red light, green light and blue light respectively has λ, the L as shown in following table 6
1, OL
1, 2OL
1/ λ, L
2, OL
2, 2OL
2/ λ, n
Ave, { 2 Φ
1/ (2 π)+m
1And { 2 Φ
2/ (2 π)+m
2Value, wherein suppose m
1=0 and m
2=0.
Table 6
What usually take place is that impurity (particle) adheres to first electrode 21 in the deposition of first electrode and during transporting.Also recurrent is to grow projection from first electrode 21 between the depositional stage of first electrode.In addition, when forming organic layer 23 step appears.This impurity and projection cause not exclusively covering organic layer 23, schematically show as Fig. 3 A.Impurity, projection and step on first electrode 21 causes surrounding in the thin half transmitting/reflectance coating 40 of the 1nm to 6nm on being formed on organic layer 23 their part fracture.The part fracture is meant that half transmitting/reflectance coating 40 is not formed near impurity, projection and the step.When under this condition, forming resistive layer 50, can be present in there is resistive layer 50 in first electrode 21 between near the part impurity or the projection at the part below impurity or the projection and half transmitting/reflectance coating 40 state.
As mentioned above, the part 40B of half transmitting/reflectance coating 40 on organic layer 23 has the thickness of 1nm to 6nm.Therefore, the part 40A of half transmitting/reflectance coating 40 on insulating barrier 24 becomes discontinuous.More specifically, expose in the bottom of opening 25 first electrode 21 part above, the organic layer 23 with luminescent layer 23A extends to the part that insulating barrier 24 surrounds openings 25 from this part.Above organic layer 23, half transmitting/reflectance coating 40 also extends to the part that insulating barrier 24 surrounds opening 25 from organic layer 23.Here, the part of insulating barrier 24 encirclement openings 25 is downward-sloping towards opening 25.Therefore, the part 40A of half transmitting/reflectance coating 40 on the part of insulating barrier 24 encirclement openings 25 is thinner than the part 40B of half transmitting/reflectance coating 40 on organic layer 23.Therefore, the part 40A of half transmitting/reflectance coating 40 on the part of insulating barrier 24 encirclement openings 25 is discontinuous.This schematically shows in Fig. 4, and wherein, black part is divided the discontinuous part of expression half transmitting/reflectance coating 40.In addition, represent the contact plug 18 and first electrode 21 by a dotted line, and represent the edge of opening 25 by chain-dotted line.In Fig. 4, by rectangle part discontinuity is shown, yet in fact, it is made up of irregular part.
When first electrode 21 and second electrode, 22 two ends apply voltage with driven light-emitting element,, be present in first electrode 21 and second electrode 22 resistive layer 50 between them and also can prevent to be short-circuited at their two ends even have impurity and projection.In addition, resistive layer 50 prevents that first electrode 21 from contacting with half transmitting/reflectance coating 40.Incidentally, if come in contact, then first electrode 21 has identical current potential with half transmitting/reflectance coating 40, thereby stops the luminous of organic layer 23.
In embodiment 1 or the embodiment 2 to 6 that mentions after a while, half transmitting/reflectance coating 40 is made up of stacked first half transmitting/reflectance coating 41 and second half transmitting/reflectance coating 42 mutually.By using PVD on organic layer 23, to form first half transmitting/reflectance coating 41 successively and second half transmitting/reflectance coating 42 forms half transmitting/reflectance coating 40.Half transmitting/the reflectance coating 40 of Xing Chenging provides the excellent electric contact between resistive layer 50 and the organic layer 23 by this way, and in the mode of expectation charge carrier is injected organic layer 23.It has also reduced driving voltage, thereby has prolonged the life-span of light-emitting component.
The relative brightness of the organic EL display of check embodiment 1 is than over time.Show the result at Fig. 3 B in the mode of curve chart, wherein, abscissa represent the time span that organic EL display is held open (hour), ordinate is represented the relative brightness ratio.In comparing embodiment 1, the light-emitting component in the prepared organic EL display only has second half transmitting/reflectance coating 42 (5nm is thick), and does not form first half transmitting/reflectance coating 41.Has RL if suppose the organic EL display of comparing embodiment 1
0Relative brightness, and the organic EL display of embodiment 1 has RL
1Relative brightness, then the relative brightness ratio passes through RL
1/ RL
0Expression.Relative brightness is represented divided by original intensity by the brightness after the special time.
Notice from Fig. 3 B, as time goes by, compare that the relative brightness of the organic EL display of embodiment 1 is than bigger with the organic EL display of comparing embodiment 1.In other words, compare with the organic EL display of comparing embodiment 1, the organic EL display with embodiment 1 of mutually stacked half transmitting/ reflectance coating 41 and 42 begins lowering of luminance still less and have the longer life-span from original intensity.In addition, the organic EL display of embodiment 1 is with frequently than the driving voltage (10mA/cm of the driving voltage low 15% of the organic EL display of embodiment 1
2Current density) move.
Below with reference to the manufacture method of summarizing the organic EL display of embodiment 1 among Fig. 5 A and Fig. 5 B, Fig. 6 A and Fig. 6 B and Fig. 7 A and Fig. 7 B.
(step 100)
First step is for being formed for the TFT of each sub-pixel on first substrate 11 by any known method.TFT comprises grid 12 (being formed on first substrate 11), gate insulating film 13 (being formed on first substrate 11 and the grid 12), source-drain region 14 (being arranged in the semiconductor layer that forms on the gate insulating film 13) and channel formation region 15 (in source-drain region 14 and corresponding to the part of semiconductor layer above grid 12).Although shown TFT is a bottom gate type, also the meeting the demands of top gate type.The grid 12 of TFT is connected to the scanning circuit (not shown).Then, by CVD SiO
2The interlayer insulating film 16A of lower floor apply first substrate 11, thereby TFT is capped.At last, the interlayer insulating film 16A of lower floor is carried out etching, make to form opening 16 ' (referring to Fig. 5 A) therein by photoetching.
(step 110)
The interlayer insulating film 16A of lower floor is through vacuum moulding machine and etched combination, and the distribution 17 of formation aluminium.Incidentally, distribution 17 by be formed on opening 16 ' in contact plug 17A be electrically connected to source-drain region of TFT.Distribution 17 is connected to signal supply circuit (not shown).By CVD SiO
2Upper strata interlayer insulating film 16B cover whole surface.Then, by photoetching and be etched among the interlayer insulating film 16B of upper strata form opening 18 '.(referring to Fig. 5 B)
(step 120)
Upper strata interlayer insulating film 16B is through vacuum moulding machine and etched combination, and first electrode 21 (referring to Fig. 5 C) of formation Al-Nd alloy.Incidentally, first electrode 21 by be formed on opening 18 ' in contact plug 18 be electrically connected to distribution 17.
(step 130)
The insulating barrier 24 that first electrode 21 is exposed in the bottom of its opening 25 is formed on (referring to Fig. 6 A) on the interlayer insulating film 16 that comprises first electrode 21.More specifically, by spin coating be etched on the interlayer insulating film 16 and the periphery of first electrode 21 forms the insulating barrier 24 (1 μ m is thick) of polyimide resin.Incidentally, the part of insulating barrier 24 encirclement openings 25 should be preferably a little.
(step 140)
Then, above part that first electrode 21 exposes from the bottom of opening 25, form organic layer 23, organic layer 23 extends to the part (referring to Fig. 6 B) that insulating barrier 24 surrounds openings 25 from this part.Incidentally, organic layer 23 is by mutual stacked two-layer the composition, and they are the hole transmission layer of organic material and the luminescent layer that also is used as electric transmission.More specifically, by using insulating barrier 24 the metal mask (not shown) to be placed on the projection of insulating barrier 24 as spacer (spacer).Carry out the vacuum moulding machine that utilizes organic material by resistance heating, on insulating barrier 24, to form the organic layer 23 that constitutes sub-pixel.Organic material pass the opening in the metal mask and the part exposed in the bottom of opening 25 from first electrode 21 (formation sub-pixel) above accumulate in insulating barrier 24 and surround on the part of openings 25.
(step 150)
Then, on the whole surface of viewing area, form first half transmitting/reflectance coating 41 and second half transmitting/reflectance coating 42 (referring to Fig. 7 A) successively.Half transmitting/reflectance coating 40 covers organic layer 23 fully, and it forms N * M organic EL.Yet as mentioned above, the half transmitting/reflectance coating 40 on the insulating barrier 24 is discontinuous to small part.Can not have a negative impact by particle energy enough little vacuum moulding machine formation half transmitting/reflectance coating 40 to organic layer 23.First half transmitting/the reflectance coating 41 and second half transmitting/reflectance coating 42 is to form under the condition shown in the following table 7.Can obtain second half transmitting/reflectance coating 42 by the codeposition of Mg-Ag (volume ratio 10: 1).Forming continuously half transmitting/reflectance coating 40 with the identical vacuum deposition apparatus that is used for organic layer 23, be subjected to the moisture in the atmosphere and the deterioration of oxygen to prevent organic layer 23.Incidentally, should be preferably form half transmitting/reflectance coating 40, thereby purposively obtain discontinuous state in the mode of incomplete covering.
Table 7
Be used for the condition that vacuum moulding machine forms first half transmitting/reflectance coating 41
Ca heating-up temperature: 480 ℃
The Ca film forms speed: 0.05nm/sec
Be used for the condition that vacuum moulding machine forms second half transmitting/reflectance coating 42
Mg heating-up temperature: 280 ℃
The Mg film forms speed: 0.05nm/sec
Ag heating-up temperature: 1100 ℃
The Ag film forms speed: 0.05 * { x/ (100+x) } nm/sec
Wherein, x represents Ag concentration (%)
(step 160)
Then, by sputter by having 1 * 10
4Ω m (1 * 10
6Niobium oxide (the Nb of resistivity Ω m)
2O
5) form resistive layer 50 (part of organic layer 23 tops is that 0.5 μ m is thick).Resistive layer 50 contacts with second electrode 22, but thereby it has electric current that high resistance flows through it less than 1/10 of the electric current that flows through a whole sub-pixel.This advantage that causes existing is, even the state shown in Fig. 3 A that takes place can not identify this defective as dim spot or half dim spot yet in shown image.At resistive layer 50 by Nb
2O
5Under the situation about forming, its desired characteristic is as implied above.Preferably, resistive layer 50 should have 1 * 10
2To 1 * 10
4The resistivity of Ω m.In addition, consider when resistive layer 50 forms along around the fact that spreads, resistive layer 50 should be preferably in high pressure (that is, 0.1 to 10Pa) formation down.Under the situation that resistive layer 50 is formed by oxide semiconductor, its resistance should change according to the oxygen concentration that is used to form film (or dividing potential drop of oxygen); Yet, if it is by Nb
2O
5Form, even then oxygen partial pressure is 1 * 10
-4To 1 * 10
-2Its resistance of fluctuation also only changes among a small circle in the scope of Pa, that is, and and 1 * 10
2To 1 * 10
4Ω m (1 * 10
4To 1 * 10
6Ω m).This has guaranteed stable resistance.
(step 170)
Then, on the whole surface of viewing area, form second electrode 22 (referring to Fig. 7 B).Second electrode 22 covers the whole surface of the organic layer 23 that constitutes N * M organic EL.Yet second electrode 22 is by organic layer 23 and insulating barrier 24 and 21 insulation of first electrode.Form second electrode 22 by the long magnetron sputtering of throwing that utilizes not the low energy particle that organic layer 23 is had a negative impact.Second electrode 22 is forming continuously with the identical vacuum deposition apparatus that is used for organic layer 23, thereby prevents that organic layer 23 is subjected to the moisture in the atmosphere and the influence of oxygen.More specifically, obtain second electrode 22 by on whole surface, forming ITO layer (0.1 μ m is thick).
(step 180)
Then, on second electrode 22, apply amorphous silicon nitride (α-Si by plasma CVD
1-xN
x) insulating protective film 31.Diaphragm 31 is formed continuously, so that second electrode 22 is not exposed to atmosphere, thereby prevents that organic layer 23 is subjected to the moisture in the atmosphere and the deterioration of oxygen.After this, the diaphragm 31 and second substrate 33 utilize the adhesive layer 32 of acryloid cement to be bonded together.At last, carry out and being connected of external circuit, to finish organic EL display.
Incidentally, second half transmitting/reflectance coating 42 can be formed by the magnesium-calcium (Mg-Ca) that substitutes magnesium-Yin (Mg-Ag).In this case, the volume ratio of magnesium and calcium is 9: 1, and second half transmitting/reflectance coating 42 has the thickness of 2nm.Second half transmitting/reflectance coating 42 can form by vacuum moulding machine.
1×10
2Ω·m(1×10
4Ω·cm)
Resistivity (the R of second resistive layer
2):
1×10
4Ω·m(1×10
6Ω·cm)
Voltage drop among the embodiment 2 in the resistive layer is less than having 1 * 10
4Ω m (1 * 10
6Voltage drop under the individual layer resistive layer situation of resistivity Ω cm).This causes the lower voltage of driving voltage.
Except the structure of resistive layer, between embodiment 1 and embodiment 2, there is not the difference between organic EL display, light-emitting component and the organic EL.Therefore, will no longer describe embodiment 2 in detail.
Embodiment 3
Embodiment 3 also is the variation of embodiment 1.Embodiment 1 is characterised in that the resistive layer that constitutes red light-emitting component has R
RResistance (being the resistance of per unit area resistive layer), the resistive layer that constitutes green luminousing element has R
GResistance, and the resistive layer that constitutes blue light emitting device has R
BResistance, these resistance are identical.In other words, whole surface is evenly covered by resistive layer.Simultaneously, each of redness, green and blue light emitting device has OL respectively
R, OL
GAnd OL
BOptical distance, make OL
BBe shorter than OL
RAnd OL
GTherefore, require the organic layer in the blue light emitting device thinner than the organic layer in green and the red light-emitting component.This makes and is easy to be short-circuited between first and second electrodes of blue light emitting device.On the other hand, the driving voltage that depends on the material of light-emitting component and organic layer thickness has the trend that the order with blue, green and red light-emitting component increases.Yet expectation blueness, green and red light-emitting component have uniform driving voltage.In addition, also expectation makes their the variation minimum of driving voltage as much as possible.In addition, suppose (area of red light-emitting component)≤(area of green luminousing element)＜(area of blue light emitting device) that then pixel trends towards increasing pro rata with their area the quantity of dim spot.
Fig. 8 shows when the total current that drives pixel changes by the curve chart of the observed leakage current of emulation with the ratio of total current.Notice that along with total current reduces, the ratio of leakage current is owing to impurity increases.Should also be noted that the resistance along with resistive layer increases, and suppressed leakage current.Incidentally, in Fig. 8, curve " A ", " B " and " C " are illustrated respectively in resistive layer and have 1 * 10
4Ω, 1 * 10
5Ω and 1 * 10
6The data that obtain during the resistance of Ω.
Embodiment 3 is designed to R
B＞R
GAnd R
B＞R
R, wherein, R
R, R
GAnd R
BThe resistance of the per unit area of the resistive layer of the redness of expression formation respectively, green and blue light emitting device makes these light-emitting components have uniform driving voltage as far as possible.More specifically, R
B=150 Ω cm
2, R
G=50 Ω cm
2And R
R=100 Ω cm
2Therefore, redness, green and blue light emitting device have the very little even driving voltage of increase, and the additional effect that prevents the short circuit between first and second electrodes.
The thickness that redness, green and blue light emitting device are constructed to their resistive layer differs from one another.More specifically, realize in the following manner.At first, form resistive layer.The part that constitutes blue light emitting device at resistive layer applies resist layer, and resistive layer is constituted the part exposure of green and red light-emitting component and carries out partially-etched to it on the thickness direction of resistive layer.Subsequently, remove resistive layer, and the resistive layer that constitutes blue and red light-emitting component is exposed and carries out partially-etched to it on the thickness direction of resistive layer.Alternatively, the resistive layer of formation redness, green and blue light emitting device is formed by different materials respectively.(for example, in embodiment 2, form first and second resistive layers, remove the part of resistive layer above red and green luminousing element by etching then).Alternatively, the resistive layer that constitutes redness, green and blue light emitting device is respectively being changed aspect the content of material of the conductance of being responsible for resistive layer.
Embodiment 4 also is the variation of embodiment 1.According to embodiment 4, the extraction electrode 60 that second electrode 22 is connected to the external circuit (not shown) is set in the outer peripheral areas of organic EL display.In embodiment 4, extraction electrode 60 is arranged in the periphery of first substrate 11, and it is formed by titanium (Ti) film.Second electrode 22 has the extension 22A that reaches extraction electrode 60 tops.Fig. 9 shows the schematic partial cross section figure according to the periphery of the organic EL display of embodiment 4.Figure 10 shows at the schematic diagram according to the setting of near the extraction electrode 60 organic EL display of embodiment 4 peripheral and second electrode 22.In Figure 10, solid line and dotted line are represented the periphery and the interior week of extraction electrode 60 respectively, diagonal (from upper right to the lower-left) is clear and definite extraction electrode 60.In addition, diagonal (from left to bottom right) is clear and definite comprises second electrode 22 of its extension 22A.In its mode of surrounding the viewing area as the formation image frame, by sputter and etched combination, the CVD that utilizes metal mask or lift-off method (lift-off), extraction electrode 60 can formed during " step 100 " or " step 130 " of embodiment 1 or between this two step.Incidentally, form at extraction electrode 60 under the situation of the part overlapping with being arranged on distribution on first substrate 11, dielectric film can randomly be formed between extraction electrode 60 and the distribution.
Light-emitting component according to embodiment 5 has the conducting film 70 that is formed between first electrode 21 and the organic layer 23.This structure has reduced the resistance at organic layer 23 and first electrode, 21 two ends.This causes having reduced driving voltage.The driving voltage that reduces has reduced the field intensity that is applied to first electrode 21 and second electrode, 22 two ends, and this causes having reduced the dim spot that is caused by leakage current and has significantly reduced power consumption.More specifically, compare with not having the light-emitting component that is formed on the conducting film 70 between first electrode 21 and the organic layer 23, the light-emitting component with embodiment 5 of conducting film 70 makes driving voltage reduce by 1.1 to 1.32 volts.
Incidentally, the light-emitting component of describing in embodiment 2 to 4 goes for light-emitting component and the organic EL display according to embodiment 5 naturally.
The light-emitting component of embodiment 6 (organic EL) is by stacked forming with the lower part mutually in order.
(A) first electrode 621,
(B) conducting film 70,
(C) organic layer 623, have the luminescent layer 623A that is made by luminous organic material,
(D) half transmitting/reflectance coating (comprising) from the first stacked in order half transmitting of organic layer 623 sides/reflectance coating 41 and second half transmitting/reflectance coating 42,
(E) resistive layer 50, and
(F) second electrode 622.
Incidentally, embodiment 6 is with the identical point of embodiment 5, light-emitting component has the conducting film 70 between first electrode 621 and organic layer 623, conducting film 70 transmissions are from a part of light of luminescent layer 623A, 621 reflections of first electrode are from the light of luminescent layer 623A, and the conducting film 70 on first electrode 621 has the average film thickness of 1nm to 6nm.
In embodiment 6, first electrode 621 is as negative pole, and second electrode 622 is as anodal.More specifically, first electrode 621 has the thickness of 0.3 μ m and by making such as the light reflecting material of Al-Nd alloy, and second electrode 622 has the thickness of 0.1 μ m and made by the transparent conductive material such as ITO.Construct half transmitting/reflectance coating 40 in the mode identical with embodiment 5.Yet embodiment 6 is that with the difference of embodiment 5 electron injecting layer of LiF is not formed between organic layer 623 and the half transmitting/reflectance coating 40; Instead, the electron injecting layer (not shown) (0.3nm is thick) of LiF is formed between organic layer 623 and the conducting film 70.
Generally speaking, the light-emitting component of embodiment 6 has structure as shown in table 8.Check the refractive index of first electrode 621 and second electrode 622.Check the light reflectivity of first electrode 621.The light transmittance of check half transmitting/reflectance coating 40 and conducting film 70.The result has been shown in table 9.Incidentally, measurement is to carry out under the wavelength of 530nm.
Table 8
| |
Soda-lime |
| Adhesive layer | |
| 32 | |
| Diaphragm | |
| 31 | SiN xLayer (5nm is thick) |
| Second electrode (positive pole) 622 | ITO layer (0.1 μ m is thick) |
| |
Nb 2O 5Layer (0.5 μ m is thick) |
| Half transmitting/reflectance coating | |
| Second half transmitting/ |
The Mg-Ag film |
| First half transmitting/ |
The Ca film |
| Electron injecting layer | LiF layer (0.3nm is thick) |
| |
Mention after a |
| Conducting film | |
| 70 | Mg-Ag film (2nm is thick) |
| First electrode (negative pole) 621 | Al-Nd layer (0.3 μ m is thick) |
| |
SiO 2Layer |
| TFT | The driver element of forming organic |
| First substrate | |
| 11 | Soda-lime glass |
Table 9
| Real part | Imaginary part | |
| The refractive index of |
0.755 | 5.466 |
| The refractive index of half transmitting/ |
0.617 | 3.904 |
| The refractive index of conducting |
0.617 | 3.904 |
| The refractive index of |
1.814 | 0 |
| The refractive index of |
2.285 | 0 |
| The refractive index of |
1.87 | 0 |
| The refractive index of |
1.53 | 0 |
| The light reflectivity of |
85％ |
| The light transmittance of half transmitting/ |
60％ |
| The light transmittance of conducting |
79％ |
| The light transmittance of |
2％ |
The light-emitting component of embodiment 6 has and satisfies above-mentioned formula (1-1) and optical distance OL (1-2)
1And OL
2, wherein, shown in Figure 13 A and Figure 13 B, OL
1Be the distance between the maximum luminous position of first interface 26 and luminescent layer 623A, and OL
2It is the distance between the maximum luminous position of second contact surface 27 and luminescent layer 623A.
In addition, the light-emitting component of embodiment 6 has the optical distance OL that satisfies following formula between first interface 26 and second contact surface 27, wherein, (unit is a radian to Φ,-2 π＜Φ≤0) total phase deviation of being taken place by first interface 26 and second contact surface 27 reflex times when the light that is sent by luminescent layer 623A of expression, λ represents the peak-peak wavelength of the spectrum of the light that sent by luminescent layer 623A.
-0.3≤{(2×OL)/λ+Φ/(2π)}≤0.3
In other words, red light-emitting component (emitting red light organic EL) makes luminescent layer 623A luminous, and makes the light that is sent resonate between first interface 26 and second contact surface 27, and allows a part of light from 622 outgoing of second electrode.The light that is sent by luminescent layer 623A has the spectrum of scope at the peak-peak wavelength that (more specifically, is 620nm in embodiment 6) between the 600nm to 650nm.Organic layer 623 on first electrode 621 has 1.1 * 10
-7M to 1.6 * 10
-7The thickness of m (more specifically, being 140nm in embodiment 6).
More specifically, the emitting red light organic layer is constructed to as shown in table 10 below.At the interface (referring to Figure 13 A) of maximum luminous position between electron transfer layer 623C and luminescent layer 623A.At table 10 or in the table 11 and table 12 mentioned after a while, the layer be arranged to along with they downwards and more near first electrode.
Table 10
In addition, green luminousing element (green emitting organic EL) makes luminescent layer 623A send light, and the light that is sent is resonated between first interface 26 and second contact surface 27, and allows a part of light from 622 outgoing of second electrode.The light that is sent by luminescent layer 623A has the spectrum of scope at the peak-peak wavelength that (more specifically, is 530nm in embodiment 6) between 500 to 550nm.Organic layer 623 on first electrode 621 has 9 * 10
-8To 1.3 * 10
-7The thickness of m (more specifically, being 118nm in embodiment 6).
More specifically, the green emitting organic layer is constructed to as shown in table 11 below.At the interface (referring to Figure 13 B) of maximum luminous position between hole transmission layer 623B and luminescent layer 623A.
Table 11
In addition, blue light emitting device (blue-light-emitting organic EL) makes luminescent layer 623A luminous, and the light that is sent is resonated between first interface 26 and second contact surface 27, and allows a part of light from 622 outgoing of second electrode.The light that is sent by luminescent layer 623A has the spectrum of scope at the peak-peak wavelength that (more specifically, is 460nm in embodiment 6) between 430 to 480nm.Organic layer 623 on first electrode 621 has 6 * 10
-8To 1.1 * 10
-7The thickness of m (more specifically, being 88nm in embodiment 6).
More specifically, the blue-light-emitting organic layer is constructed to as shown in table 12 below.At the interface (referring to Figure 13 B) of maximum luminous position between hole transmission layer 623B and luminescent layer 623A.
Table 12
Light-emitting component according to embodiment 6 has the organic layer of being made up of stacked in order electron transfer layer 623C, luminescent layer 623A, hole transmission layer and hole injection layer (electron transfer layer 623C approaches first electrode 621) 623.The electronics that this structure has improved among the luminescent layer 623A injects, thereby has reduced driving voltage.The driving voltage that reduces has reduced the electric field strength between first electrode 621 and second electrode 622, and this has reduced the dim spot that is caused by leakage current again, and has significantly reduced power consumption.
More specifically, the light-emitting component of embodiment 6 has the driving voltage than embodiment 5 low 1.7 to 2.6V.
With the light-emitting component of embodiment 6 and do not have and compare aspect the relation of light-emitting component between the relation between power consumption and the brightness and driving voltage and current density of comparing embodiment 6 of conducting film 70.The result is respectively shown in Figure 14 A and Figure 14 B.Notice that the light-emitting component of embodiment 6 has better light characteristic and lower current density with comparing of comparing embodiment 6.
The light-emitting component of embodiment 6 and organic EL display can be made in mode substantially the same manner as Example 1; Therefore, omit the description of its manufacture method.
Incidentally, the light-emitting component nature of explaining in embodiment 2 to 4 is applicable to light-emitting component and organic EL display according to embodiment 6.
Embodiment 7
Embodiment 7 relates to the light-emitting component that belongs to second embodiment of the invention and according to the manufacture method of the light-emitting component of embodiment of the present invention.Figure 15 shows the schematic partial cross section figure of organic EL display of the light-emitting component of Application Example 7.Figure 16 A and Figure 16 B show the schematic diagram of organic layer in the light-emitting component of embodiment 7 etc.
The light-emitting component of embodiment 7 (organic EL) is by stacked forming with the lower part mutually in order.
(C) resistive layer 50, and
(D) second electrode 22.
21 reflections of first electrode are from the light of luminescent layer 23A, and 22 transmissions of second electrode are from the light of luminescent layer 23A.Form mixed layer 80 between organic layer 23 and resistive layer 50, it comprises the material and the metal of orlop portion of material, the formation resistive layer 50 of the portion of the superiors that constitutes organic layer 23.
The organic EL display of embodiment 7 has a plurality of light-emitting components (organic electroluminescent device or organic EL), and each is by stacked forming with the lower part mutually in order.
(a) first electrode 21,
(b) insulating barrier 24, have opening 25, expose first electrode 21 in the bottom of opening 25,
(c) organic layer 23, have the luminescent layer 23A that is made by luminous organic material, and on the part that first electrode 21 exposes in the bottom of opening 25, organic layer 23 extends to the part that insulating barrier 24 surrounds openings 25 from this part,
(d) resistive layer 50, cover organic layer 23, and
(e) second electrode 22 is formed on the resistive layer 50,
Each light-emitting component all is constructed between organic layer 23 and resistive layer 50 to form mixed layer 80, and it comprises the material and the metal of orlop portion of material, the formation resistive layer 50 of the portion of the superiors that constitutes organic layer 23.
21 reflections of first electrode are from the light of luminescent layer 23A, and 22 transmissions of second electrode are from the light of luminescent layer 23A.
The part of mixed layer 80 above insulating barrier 24 is discontinuous at least in part.
More specifically, the mixed layer 80 among the embodiment 7 by the ET085 (as mentioned above) of the portion of the superiors that constitutes organic layer 23, constitute the Nb of the orlop portion of resistive layer 50
2O
5And alkaline-earth metal (Ca) is formed particularly.
Embodiment 7 is the structure of first electrode 21, second electrode 22 and organic layer 23 with the something in common of embodiment 1.Embodiment 7 is with another something in common of embodiment 1, has the electron injecting layer (not shown) (0.3nm is thick) of LiF between them at organic layer 23 and half transmitting/reflectance coating 40.In addition, except substituting half transmitting/reflectance coating 40 with mixed layer 80, the structure of those of the light-emitting component of embodiment 7 (organic EL) and organic EL display and embodiment 1 is basic identical.Therefore, explain no longer in detail below.Incidentally, find that mixed layer 80 has refractive index as shown in table 13 below and light transmittance.
Table 13
The refractive index of mixed layer 80
Real part: 0.617
Imaginary part: 3.904
The light transmittance of mixed layer 80: 60%
Although the part of mixed layer on insulating barrier 24 is discontinuous at least in part, mixed layer partly is connected to the part of mixed layer on organic layer 23 in the part on the insulating barrier 24.In some cases, mixed layer is not attached to the part of mixed layer on organic layer 23 in the part on the insulating barrier 24.Under the situation of some organic ELs, mixed layer partly is connected to the part of mixed layer on organic layer 23 in the part on the insulating barrier 24, and under the situation of other organic ELs, mixed layer is connected to the part of mixed layer on organic layer 23 in the part on the insulating barrier 24.Incidentally, mixed layer is littler than the average film thickness of the part of mixed layer on organic layer 23 at the average film thickness of the part on the insulating barrier 24.Therefore, can make the part of mixed layer on insulating barrier 24 discontinuous.
Embodiment 7 is designed to make the light that sends from luminescent layer 23A to resonate between interface that is formed by first electrode 21 and organic layer 23 and the interface that formed by mixed layer 80 and organic layer 23, and part resonance light transmission mixed layer 80, and then from 622 outgoing of second electrode.
The light-emitting component of embodiment 7 is constructed to shown in Figure 16 A and Figure 16 B.First interface 26 that is formed by first electrode 21 and organic layer 23 is a distance L apart from the maximum luminous position of luminescent layer 23A
1With optical distance OL
1In addition, the second contact surface 27 that is formed by mixed layer 80 and organic layer 23 is a distance L apart from the maximum luminous position of luminescent layer 23A
2With optical distance OL
2Then, these parameters satisfy following formula (1-1) and (1-2).
0.7{-Φ
1/(2π)+m
1}≤2×OL
1/λ≤1.2{-Φ
1/(2π)+m
1}...(1-1)
0.7{-Φ
2/(2π)+m
2}≤2×OL
2/λ≤1.2{-Φ
2/(2π)+m
2}...(1-2)
Wherein,
λ: the peak-peak wavelength of the spectrum of the light that luminescent layer 23A produces,
Φ
1: the catoptrical phase pushing figure (radian) that occurs in 26 places, first interface
[wherein ,-2 π＜Φ
1≤ 0]
Φ
2: the catoptrical phase pushing figure (radian) that occurs in second contact surface 27 places
[wherein ,-2 π＜Φ
2≤ 0], and
(m in embodiment 7
1, m
2) value be (0,0).
In addition, the light-emitting component of embodiment 7 has the parameter that satisfies following formula.
-0.3≤{(2×OL)/λ+Φ/(2π)}≤0.3
Wherein, OL represent first interface 26 that forms by first electrode 21 and organic layer 23 and the second contact surface 27 that forms by mixed layer 80 and organic layer 23 between optical distance; Φ is illustrated in the total amount (radian) (wherein ,-2 π＜Φ≤0) of the catoptrical phase deviation that first interface 26 and second contact surface 27 places take place, and λ represents the peak-peak wavelength of the spectrum of the light that produced by luminescent layer 23A.
The light-emitting component of embodiment 7 has the mixed layer 80 that is formed between organic layer 23 and the resistive layer 50.Mixed layer 80 is made up of the first half transmitting/reflectance coating and the second half transmitting/reflectance coating that are formed on successively by PVD on the organic layer 23.The mixed layer 80 of Xing Chenging provides the excellent electric contact between resistive layer 50 and the organic layer 23 by this way, and the electronics that improves in the organic layer 23 injects.This has reduced driving voltage, and has prolonged the life-span of light-emitting component.
The light-emitting component of embodiment 7 has by carrying out (relating in the manufacturing at the light-emitting component of embodiment 1) " step 150 " formed mixed layer 80 under the condition shown in the following table 14.In other words, by utilizing PVD on organic layer 23, to form first and second half transmittings/reflectance coating successively and resistive layer forms mixed layer 80.The mixed layer 80 of Xing Chenging is made up of the material of the portion of the superiors that constitutes organic layer 23, the material that constitutes the orlop portion of resistive layer 50, the material that constitutes the material of first half transmitting/reflectance coating and constitute second half transmitting/reflectance coating thus, and this has formed fabulous integral body.
Table 14
Form the condition of first half transmitting/reflectance coating by vacuum moulding machine:
Al heating-up temperature: 1000 ℃
The Al film forms speed: 0.05nm/sec
Form the condition of second half transmitting/reflectance coating by vacuum moulding machine:
Mg heating-up temperature: 280 ℃
The Mg film forms speed: 0.05nm/sec
Ag heating-up temperature: 1100 ℃
The Ag film forms speed: 0.05 * { x/ (100+x) } nm/sec
Wherein, x represents Ag concentration (%)
Described the present invention, but these preferred implementations are not limited to scope of the present invention with reference to preferred implementation.Execution mode only shows light-emitting component and organic EL, the structure of organic EL display and the material that constitutes light-emitting component, organic EL and organic EL display with embodiment.They can change and revise according to environment.The light-emitting component of embodiment 7 can be by at first forming second half transmitting/reflectance coating, forming first half transmitting/reflectance coating then and make.In addition, embodiment 7 can be revised as half transmitting/reflectance coating is formed individual layer (that is, forming by the codeposition of calcium, magnesium and silver or by aluminium, magnesium and silver-colored codeposition).In addition, comprise that the material of orlop portion of material, resistive layer of the portion of the superiors that constitutes organic layer and the mixed layer of metal can be formed between organic layer and the resistive layer.
Revise aforementioned embodiments as mentioned above, make organic layer be formed for each sub-pixel.Alternatively, each of emitting red light sub-pixel and green emitting sub-pixel all has the organic layer of the formation blue-light-emitting sub-pixel that extends on it.In other words, it can be constructed to have the organic layer that constitutes the blue-light-emitting sub-pixel and be used as shared layer on the whole zone.In this case, the emitting red light sub-pixel has the stepped construction of being made up of organic layer that sends ruddiness and the organic layer that sends blue light.When electric current flowed at first electrode and the second electrode two ends, it sent ruddiness; Yet this makes the blue-light-emitting energy move to the emitting red light organic layer, and this has improved the luminous efficiency of emitting red light organic layer.Similarly, the green emitting sub-pixel has the stepped construction of being made up of organic layer that sends green glow and the organic layer that sends blue light.When electric current flowed at first electrode and the second electrode two ends, it sent green glow; Yet this makes the blue-light-emitting energy move to the green emitting organic layer, and this has improved the luminous efficiency of green emitting organic layer.Can on the whole surface of emitting red light organic layer and green emitting organic layer, form shared layer, and not need to form separately the blue-light-emitting organic layer.For example, this has eliminated the demand of the mask that is used to form the luminescent layer that constitutes the blue-light-emitting organic layer.This helps a large amount of productions.In addition, for example, emitting red light sub-pixel and green emitting sub-pixel can have the blue-light-emitting organic layer on emitting red light organic layer that constitutes emitting red light sub-pixel and green emitting sub-pixel and green emitting organic layer.
Figure 17 A shows thickness and the average reflectance of 530nm wavelength and the relation of transmissivity of half transmitting/reflectance coating 40.Notice that along with reducing of half transmitting/reflectance coating 40 thickness, average reflectance is near 0.Therefore, half transmitting/reflectance coating 40 is along with all light of almost transmission that reduces to become of its thickness.The relation of the difference between the refractive index of the average reflectance that Figure 17 B shows the reflection at the interface between layer A and the layer B (light of supposing to have wavelength 530nm propagates into the layer that contact with layer A from layer A) and the material of the refractive index of the material that constitutes layer A and formation layer B.Notice that average reflectance is owing to the increase of Fresnel reflection along with value Δ n increases.
Therefore, along with 40 attenuation of half transmitting/reflectance coating and near transparent, reflecting at the interface between the 3rd interface or half transmitting/reflectance coating 40 and resistive layer 50.Alternatively, be under the double-deck situation at resistive layer, mainly occur in the reflection of locating at the interface (the 4th interface) between first resistive layer and second resistive layer and depend on the half transmitting/reflectance coating 40 of formation stepped construction and the material of resistive layer.The result, make the light that produces by luminescent layer between first interface and the 3rd interface (interface that forms by half transmitting/reflectance coating 40), resonate, perhaps resonance between first interface and the 4th interface (interface that is formed by first resistive layer and second resistive layer) is perhaps resonating between first interface and the 3rd interface or between first interface and the 4th interface.Have at light-emitting component and above-mentionedly under the situation of mixed layer also set up.
Therefore, in these cases, the optical distance OL of the maximum luminous position from the second contact surface to the luminescent layer
2Should by from the 3rd interface or the 4th interface to the optical distance OL of the maximum luminous position of luminescent layer
2Replace.In addition, Φ
2Value should be replaced (supposing-2 π＜Φ by the phase pushing figure (radian) of the light by the 3rd or the 4th boundary reflection
2≤ 0).Alternatively, from the optical distance OL of second contact surface should by from the 3rd interface or the optical distance OL at the 4th interface substitute, and the total amount Φ (radian) of the phase deviation that is taken place by first interface and second contact surface reflex time when the light that is produced by luminescent layer (suppose-2 π＜Φ≤0) should be replaced (suppose-2 π＜Φ≤0) by the total amount Φ (radian) when the phase deviation that is taken place during by first interface and the 3rd interface or the 4th boundary reflection by the light of luminescent layer generation.Mainly occur in the 3rd interface (it is the interface between half transmitting/reflectance coating 40 and the resistive layer 50) and locate or reflect mainly to occur under the situation about locating at the 4th interface (it is the interface between first resistive layer and second resistive layer) in reflection, the phrase of pronouncing " as the 3rd interface at the interface between half transmitting/reflectance coating and the resistive layer " or " as the 4th interface at the interface between first resistive layer and second resistive layer " should be changed in the phrase of " second contact surface that is formed by half transmitting/reflectance coating and organic layer ".This is also applicable to the device with mixed layer.
The light-emitting component of embodiment 6 is modified to resistive layer and is made up of first resistive layer and second resistive layer.The light-emitting component of revising is constructed to as shown in table 15 below.Find that reflection occurs in the 3rd interface (interface between half transmitting/reflectance coating and the resistive layer) and the 4th interface (interface between first resistive layer and second resistive layer) located.The light-emitting component of revising have resistive layer only by second resistive layer form 1.3 times of efficient of light-emitting component.Incidentally, at the refractive index n of the material that constitutes first resistive layer
1, constitute the refractive index n of the material of second resistive layer
2And the refractive index n of the material of the portion of the superiors of formation organic layer
0Between, exist with undefined relation.
-0.6≤n
0-n
1≤-0.4
0.4≤n
1-n
2≤0.9
Table 15
The present invention is contained in the related subject of on December 1st, 2009 to the Japanese priority patent application JP 2009-273101 of Japan Patent office submission, and its full content is hereby expressly incorporated by reference.
It will be understood by those of skill in the art that according to designing requirement and other factors, can carry out various modifications, combination, sub-portfolio and distortion, as long as they are in the scope of appended claims or its equivalent.
Claims (13)
1. light-emitting component comprises:
(A) first electrode,
(B) organic layer has the luminescent layer of being made by luminous organic material,
(C) half transmitting/reflectance coating,
(D) resistive layer, and
(E) second electrode,
Wherein, described first electrode, described organic layer, described half transmitting/reflectance coating, described resistive layer and described second electrode are in turn stacked,
Wherein, described first electrode reflects the light from described luminescent layer,
The described second electrode transmission is from the light of described luminescent layer,
Described half transmitting/reflectance coating comprises first half transmitting/reflectance coating and the second half transmitting/reflectance coating that stacks gradually from described organic layer side, and
Described half transmitting/reflectance coating on the described organic layer has the average thickness of 1nm～6nm.
2. light-emitting component according to claim 1, wherein, described first half transmitting/reflectance coating is made by calcium, aluminium, barium or caesium, and described second half transmitting/reflectance coating is made by magnesium-Yin, magnesium-calcium, aluminium or silver.
3. light-emitting component according to claim 1, wherein, described resistive layer comprises having 1 * 10
2Ω m～1 * 10
6The material of the resistivity of Ω m, and have the thickness of 0.1 μ m～2 μ m.
4. light-emitting component according to claim 1, wherein, the light that sends from described luminescent layer resonates between first interface and second contact surface, and part resonance light is from the described second electrode outgoing, described first interface is formed between described first electrode and the described organic layer, and described second contact surface is formed between described half transmitting/reflectance coating and the described organic layer.
5. light-emitting component according to claim 4, wherein, satisfy following formula (1-1) and (1-2):
0.7{-Φ
1/(2π)+m
1}≤2×OL
1/λ≤1.2{-Φ
1/(2π)+m
1}...
(1-1)
0.7{-Φ
2/(2π)+m
2}≤2×OL
2/λ≤1.2{-Φ
2/(2π)+m
2}...
(1-2)
Wherein,
OL
1: the optical distance from described first interface to the maximum luminous position of described luminescent layer,
OL
2: the optical distance of maximum luminous position from described second contact surface to described luminescent layer,
λ: the peak-peak wavelength of the spectrum of the light that described luminescent layer produces,
Φ
1: occur in described first at the interface the catoptrical phase pushing figure, unit is a radian, wherein, and-2 π＜Φ
1≤ 0,
Φ
2: occur in the catoptrical phase pushing figure at described second contact surface place, unit is a radian, wherein, and-2 π＜Φ
2≤ 0, and
(m
1, m
2) value be (0,0), (1,0) or (0,1).
6. light-emitting component according to claim 4, wherein, satisfy following formula:
0.7≤{ (2 * OL)/λ+Φ/(2 π) }≤1.3 or
-0.3≤{(2×OL)/λ+Φ/(2π)}≤0.3
Wherein,
OL: the optical distance between described first interface and the described second contact surface,
Φ: the total amount of the phase deviation that is taken place by described first interface and described second contact surface reflex time when the light that produces by described luminescent layer, unit is a radian, suppose-2 π＜Φ≤0,
λ: the peak-peak wavelength of the spectrum of the light that described luminescent layer produces.
7. light-emitting component comprises:
(A) first electrode,
(B) organic layer has the luminescent layer of being made by luminous organic material,
(C) resistive layer, and
(D) second electrode
Wherein, described first electrode, described organic layer, described resistive layer and described second electrode are in turn stacked,
Wherein, described first electrode reflects the light from described luminescent layer,
The described second electrode transmission is from the light of described luminescent layer, and
Form mixed layer between described organic layer and described resistive layer, described mixed layer comprises the material of the superiors that constitute described organic layer, the undermost material and the metal of the described resistive layer of formation.
8. light-emitting component according to claim 7, wherein, described metal comprises alkaline-earth metal.
9. light-emitting component according to claim 7, wherein, described resistive layer comprises that resistivity is 1 * 10
2Ω m～1 * 10
6The material of Ω m, and have the thickness of 0.1 μ m～2 μ m.
10. light-emitting component according to claim 7, wherein, resonate between first interface and second contact surface from the light of described luminescent layer emission, and part resonance light is from the described second electrode outgoing, described first interface is formed between described first electrode and the described organic layer, and described second contact surface is formed between described resistive layer and the described mixed layer.
11. light-emitting component according to claim 10, its satisfy following formula (1-1) and:
0.7{-Φ
1/(2π)+m
1}≤2×OL
1/λ≤1.2{-Φ
1/(2π)+m
1}...
(1-1)
0.7{-Φ
2/(2π)+m
2}≤2×OL
2/λ≤1.2{-Φ
2/(2π)+m
2}...
(1-2)
Wherein,
OL
1: the optical distance from described first interface to the maximum luminous position of described luminescent layer,
OL
2: the optical distance of maximum luminous position from described second contact surface to described luminescent layer,
λ: the peak-peak wavelength of the spectrum of the light that produces by described luminescent layer,
Φ
1: occur in described first at the interface the catoptrical phase pushing figure, unit is a radian, wherein, and-2 π＜Φ
1≤ 0,
Φ
2: occur in the catoptrical phase pushing figure at described second contact surface place, unit is a radian, wherein, and-2 π＜Φ
2≤ 0, and
(m
1, m
2) value be (0,0), (1,0) or (0,1).
12. light-emitting component according to claim 10, it satisfies following formula:
0.7≤{ (2 * OL)/λ+Φ/(2 π) }≤1.3 or
-0.3≤{(2×OL)/λ+Φ/(2π)}≤0.3
Wherein,
OL: the optical distance between described first interface and the described second contact surface,
Φ: the total amount of the phase deviation that is taken place by described first interface and described second contact surface reflex time when the light that produces by described luminescent layer, unit is a radian, suppose-2 π＜Φ≤0,
λ: the peak-peak wavelength of the spectrum of the light that described luminescent layer produces.
13. a method that is used to make light-emitting component, described light-emitting component has:
(A) first electrode,
(B) organic layer has the luminescent layer of being made by luminous organic material,
(C) resistive layer, and
(D) second electrode,
Wherein, described first electrode, described organic layer, described resistive layer and described second electrode are in turn stacked,
Wherein, described first electrode reflects the light from described luminescent layer, and
The described second electrode transmission is from the light of described luminescent layer,
Said method comprising the steps of:
On described organic layer, form first half transmitting/reflectance coating and second half transmitting/reflectance coating successively by physical vapour deposition (PVD).
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|---|---|---|---|
| JP2009273101A JP5463882B2 (en) | 2009-12-01 | 2009-12-01 | Light emitting device and manufacturing method thereof |
| JP2009-273101 | 2009-12-01 |
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|---|---|
| US (3) | US8334530B2 (en) |
| JP (1) | JP5463882B2 (en) |
| CN (1) | CN102082235B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| US8841658B2 (en) | 2014-09-23 |
| US20110163339A1 (en) | 2011-07-07 |
| JP5463882B2 (en) | 2014-04-09 |
| US8334530B2 (en) | 2012-12-18 |
| US20120295016A1 (en) | 2012-11-22 |
| US8435829B2 (en) | 2013-05-07 |
| JP2011119047A (en) | 2011-06-16 |
| US20130240857A1 (en) | 2013-09-19 |
| CN102082235B (en) | 2015-07-08 |
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