CN112349854A - Display device, preparation method thereof and display panel - Google Patents
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Abstract
The invention relates to a display device, a preparation method thereof and a display panel, wherein the display device comprises a substrate, a pixel electrode, a first functional layer, a pixel limiting layer, a light emitting layer and a top electrode, the pixel electrode is arranged on the substrate, the first functional layer is arranged on the pixel electrode, the pixel limiting layer is arranged on the first functional layer and forms a pixel pit corresponding to the pixel electrode so as to at least partially expose the first functional layer, the light emitting layer is arranged on the first functional layer in the pixel pit, and the top electrode is arranged on the light emitting layer. The display device can form the first functional layer before the pixel limiting layer is formed, is beneficial to large-area film forming, can reduce the problem of printing film layer accumulation of the first functional layer in each pixel, can effectively improve the film accumulation condition in the subsequent printing process, and improves the film uniformity in the pixel, thereby improving the light-emitting uniformity of the whole display device.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display device, a preparation method thereof and a display panel.
Background
In the contemporary information society, the importance of displays as a visual information transmission medium is further enhanced. To dominate in the future, displays are moving towards the trend towards lighter, thinner, lower power consumption, lower cost and better image quality. For example, organic electroluminescent diodes (OLEDs, QLEDs, etc.) are the main research direction for display devices because of their advantages of self-luminescence, fast response, wide viewing angle, high brightness, thinness, etc. The OLED, the QLED and other display devices are prepared in a printing mode, a fine mask (mask) does not need to be manufactured, the printing process can save materials, and the method has the advantage of low cost and is the trend of future display technologies.
However, the printing process is prone to edge build-up problems during dry film formation. In the printing process, the more the number of printed functional layer layers is, the more serious the accumulation condition of the pixel edge is, and further the film thickness of the whole sub-pixel is influenced, so that the problem that the edge of the sub-pixel is too thick is caused, the light-emitting area of the whole display device is influenced, and finally the light-emitting effect is reduced.
Disclosure of Invention
Accordingly, there is a need for a display device that can improve the light emission effect.
A display device comprises a substrate, a pixel electrode, a first functional layer, a pixel limiting layer, a light emitting layer and a top electrode, wherein the pixel electrode is arranged on the substrate, the first functional layer is arranged on the pixel electrode, the pixel limiting layer is arranged on the first functional layer and forms a pixel pit corresponding to the pixel electrode so as to at least partially expose the first functional layer, the light emitting layer is arranged on the first functional layer in the pixel pit, and the top electrode is arranged on the light emitting layer.
In one embodiment, the first functional layer is a patterned functional layer, the first functional layer is disposed corresponding to the pixel electrode to at least partially expose the substrate, and the pixel defining layer covers the exposed substrate and a portion of the first functional layer.
In one embodiment, the first functional layer completely covers the pixel electrode and the substrate.
In one embodiment, the first functional layer is a hole functional layer including one or more of a hole injection layer and a hole transport layer or an electron functional layer including one or more of an electron transport layer, a hole blocking layer, and an electron injection layer.
In one embodiment, the electron transport layer is made of an N-type inorganic semiconductor material, the thickness of the electron transport layer is 30nm to 80nm, the hole blocking layer is made of a wide band gap insulating material, and the thickness of the hole blocking layer is 3nm to 10 nm.
The invention also provides a preparation method of the display device, which comprises the following steps:
providing a substrate, and forming a pixel electrode and a first functional layer on the pixel electrode on the substrate;
forming a pixel defining layer on the first functional layer, the pixel defining layer forming a pixel pit corresponding to the pixel electrode to at least partially expose the first functional layer;
forming a light emitting layer covering the first functional layer in the pixel pit;
and forming a top electrode on the light-emitting layer to obtain the display device.
In one embodiment, the step of forming a pixel electrode and a first functional layer on the pixel electrode on the substrate includes the steps of: forming a pixel electrode material layer on the substrate, then forming a first functional material layer on the pixel electrode material layer, and patterning the pixel electrode material layer and the first functional material layer to form the pixel electrode and the first functional layer.
In one embodiment, the step of forming a pixel electrode and a first functional layer on the pixel electrode on the substrate includes the steps of: forming a pixel electrode material layer on the substrate, patterning the pixel electrode material layer to form the pixel electrode, and forming the first functional layer on the pixel electrode to completely cover the pixel electrode and the substrate.
In one embodiment, the method further comprises, before the step of forming the first functional layer, the steps of: subjecting the pixel electrode to UV treatment or O2And (4) carrying out plasma treatment.
The invention also provides a display panel comprising the display device.
According to the display device, the first functional layer is arranged on the pixel electrode, and the pixel limiting layer is arranged on the first functional layer, so that the first functional layer can be formed before the pixel limiting layer is formed, large-area film forming of the first functional layer is facilitated, meanwhile, the problem of printing film layer accumulation of the first functional layer in each pixel can be reduced, the film accumulation condition in a subsequent printing process can be effectively improved, the uniformity of films in the pixels is improved, and the light emitting uniformity of the whole display device is improved. If the first functional layer is prepared after the pixel defining layer is prepared, even if the film formation boundary is difficult to be determined by a mask plate and a physical sputtering method (evaporation) is employed due to the inherent characteristics of the sputtering method, the first functional layer may be formed on the side wall or the upper surface of the pixel pit of the pixel defining layer, which may affect the uniformity of the subsequent film formation. The display device of the invention effectively avoids the problems and finally improves the luminous effect of the display device.
Drawings
Fig. 1 is a schematic structural diagram of a display device according to an embodiment of the present invention;
fig. 2 is a schematic structural view of a display device according to still another embodiment of the present invention;
FIG. 3 is a schematic diagram of a state in the fabrication process of the display device shown in FIG. 1;
FIG. 4 is a schematic structural view of a further state in the manufacturing process of the display device shown in FIG. 1;
FIG. 5 is a schematic view of a structure of a further state in the manufacturing process of the display device shown in FIG. 1;
FIG. 6 is a schematic view showing a structure of a further state in the manufacturing process of the display device shown in FIG. 1;
FIG. 7 is a schematic view showing a structure of a further state in the manufacturing process of the display device shown in FIG. 1;
fig. 8 is a schematic structural view of a further state in the manufacturing process of the display device shown in fig. 1;
FIG. 9 is a schematic diagram of a state in the fabrication process of the display device shown in FIG. 2;
fig. 10 is a schematic structural view of a further state in the manufacturing process of the display device shown in fig. 2;
fig. 11 is a schematic structural view of a further state in the manufacturing process of the display device shown in fig. 2;
fig. 12 is a schematic structural view of a further state in the manufacturing process of the display device shown in fig. 2;
fig. 13 is a schematic structural view of still another state in the manufacturing process of the display device shown in fig. 2;
fig. 14 is a schematic structural view of still another state in the manufacturing process of the display device shown in fig. 2.
Detailed Description
In order that the invention may be more fully understood, a more particular description of the invention will now be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, a display device 100 according to an embodiment of the present invention includes a substrate 110, a pixel electrode 120, a first functional layer 130, a pixel defining layer 140, a light emitting layer 150, and a top electrode 170, wherein the pixel electrode 120 is disposed on the substrate 110, the first functional layer 130 is disposed on the pixel electrode 120, the pixel defining layer 140 is disposed on the first functional layer 130 and forms a pixel pit corresponding to the pixel electrode 120 to at least partially expose the first functional layer 130, the light emitting layer 150 is disposed on the first functional layer 130 in the pixel pit, and the top electrode 170 is disposed on the light emitting layer 150.
In the display device 100 of the embodiment, the first functional layer 130 is disposed on the pixel electrode 120, and the pixel defining layer 140 is disposed on the first functional layer 130, so that the first functional layer 130 can be formed before the pixel defining layer 140 is formed, which is beneficial to forming a large-area film of the first functional layer 130, and meanwhile, the problem of the deposition of the printing film layer of the first functional layer 130 in each pixel can be reduced, the film deposition in the subsequent printing process can be effectively improved, the uniformity of the film in the pixel can be improved, and the uniformity of the light emission of the whole display device 100 can be improved. If the first functional layer is prepared after the pixel defining layer is prepared, even if the film formation boundary is difficult to be determined by a mask plate and a physical sputtering method (evaporation) is employed due to the inherent characteristics of the sputtering method, the first functional layer may be formed on the side wall or the upper surface of the pixel pit of the pixel defining layer, which may affect the uniformity of the subsequent film formation. The display device 100 of the present embodiment effectively avoids the above-mentioned problems, and finally improves the light emitting effect of the display device 100.
In the specific example shown in fig. 1, the first functional layer 130 is a patterned functional layer, the first functional layer 130 is disposed corresponding to the pixel electrode 120 to at least partially expose the substrate 110, and the pixel defining layer 140 covers the exposed substrate 110 and a portion of the first functional layer 130. Specifically, the pixel electrode 120 is a patterned pixel electrode, and the first functional layer 130 has the same patterned pattern as the pixel electrode 120.
Alternatively, the first functional layer 130 may be a hole functional layer or an electron functional layer. It is understood that the second functional layer 160 may be further disposed between the light emitting layer 150 and the top electrode 170, and it is understood that the second functional layer 160 is an electron functional layer when the first functional layer 130 is a hole functional layer, and the second functional layer 160 is a hole functional layer when the first functional layer 130 is an electron functional layer.
In this specific example, the pixel electrode 120 is an anode, the top electrode 170 is a cathode, and the first functional layer 130 is a hole functional layer.
In another specific example, the display device 200 shown in fig. 2 is different from the display device 100 shown in fig. 1 in that the first functional layer 230 is a non-patterned functional layer, i.e. the first functional layer 230 completely covers the entire substrate 210 and the pixel electrode 220, and the pixel defining layer 240 is not in direct contact with the substrate 210. It is understood that a second functional layer 260 may also be disposed between the light emitting layer 250 and the top electrode 270.
Optionally, the hole function layer includes one or more of a hole injection layer and a hole transport layer, the electron function layer includes one or more of an electron transport layer, a hole blocking layer and an electron injection layer, for example, the hole injection layer and the hole transport layer are stacked and the hole injection layer is located at the side close to the anode, the hole blocking layer, the electron transport layer and the electron injection layer are sequentially stacked and the hole blocking layer is located at the side close to the anode.
In one specific example, the hole injection layer is made of a polymer material having the property of being insoluble after heat treatment, such as PEDT/PSS (silane-containing coupling agent), Nissan SHI-2520, Nissan SHI-X04, and the like; the hole injection layer can also adopt small molecule materials which are of evaporation type and insoluble in polar solvents, including but not limited to DNTPD, MeO-TPD, m-MTDATA, NATA, NPNPB and the like.
In one specific example, the hole transport layer is an organic molecule having a deeper HOMO level and a higher hole mobility, including but not limited to aromatic compounds, carbazole-based compounds, organometallic complexes, and the like.
In one embodiment, the electron transport layer is made of organic molecules with a shallow LUMO energy level and a high electron mobility, including but not limited to oxazoles, metal chelates, and quinolines.
In one embodiment, the electron transport layer is made of an N-type inorganic semiconductorThe hole blocking layer is made of a wide-band-gap insulating material, and the effect of manufacturing by adopting an evaporation process is good. Optionally, the thickness of the electron transport layer is 30nm to 80nm, and the thickness of the hole blocking layer is 3nm to 10 nm. Specifically, the electron transport layer is made of one or more of ZnO, TiO and ZnMgO, and the hole blocking layer is made of MgO and ZrO2、Ga2O3、La2O3、Nd2O3And Yb2O3One or more of (a).
In one specific example, the substrate 110 includes a substrate including a rigid substrate and a flexible substrate, such as glass, PI, etc., and an array driving unit for driving the electroluminescent pixel cells.
In a specific example, when the pixel electrode 120 is used as an anode of the light emitting unit, the pixel electrode may be a conductive film structure of metal, metal oxide, and a stack thereof, for example, a top emission type light emitting display panel is generally manufactured by using a highly conductive metal material, such as Al, Ag, and an alloy thereof, and a stacked conductive film structure of ITO/Ag/ITO.
In one specific example, the pixel defining layer 140 is made of a photoresist material, and the photoresist material with lyophobic surface is preferably made by coating in a printing process, and the thickness is 800nm to 3000 nm.
In one embodiment, the light-emitting layer 150 is an organic light-emitting layer or an inorganic quantum dot light-emitting layer, and the material includes a conventional solution-processable light-emitting material, which can be prepared by a printing process. The inorganic quantum dot light-emitting layer mainly comprises a blue (B) quantum dot light-emitting layer, a red (R) quantum dot light-emitting layer and a green (G) quantum dot light-emitting layer. The quantum dot material in the inorganic quantum dot light-emitting layer is II-V group compound and core-shell structure thereof, III-V or IV-VI group compound semiconductor and core-shell structure thereof, and the like. For example, group II-V compounds and their core-shell structures include CdS, CdSe, CdS/ZnS, CdSe/ZnS, and CdSe/CdS/ZnS, etc., and group III-V or IV-VI compound semiconductors and their core-shell structures include GaAs, InP, PbS/ZnS, and PbSe/ZnS, etc.
In a specific example, the top electrode 170 is one or more of Al, Ag, Au, Ca, Ba, Mg and oxides thereof, and the top electrode 170 may be prepared by evaporation to have a thickness of 15nm to 150 nm.
The method of manufacturing the display device 100 according to an embodiment of the present invention includes the following steps S1 to S4:
s1, providing a substrate 110, and forming a pixel electrode 120 and a first functional layer 130 on the pixel electrode 120 on the substrate 110.
S2, forming a pixel defining layer 140 on the first functional layer 130, the pixel defining layer 140 forming a pixel pit corresponding to the pixel electrode 120 to at least partially expose the first functional layer 130.
S3, a light-emitting layer 150 is formed in the pixel pit to cover the first functional layer 130.
S4, the top electrode 170 is formed on the light-emitting layer 150, and the display device 100 is obtained.
In the manufacturing method of the display device 100 according to this embodiment, the first functional layer 130 is deposited by using an evaporation process, a precision coating process (slot die) or a printing process before the pixel defining layer 140 is formed, which is beneficial to forming the first functional layer 130 in a large area, and meanwhile, the problem of the deposition of the printing film layer of the first functional layer 130 in each pixel can be reduced, the film deposition in the subsequent printing process can be effectively improved, the uniformity of the film in the pixel can be improved, and the uniformity of the light emission of the entire display device 100 can be improved. If the first functional layer is prepared after the pixel defining layer is prepared, even if the film formation boundary is difficult to be determined by a mask plate and a physical sputtering method (evaporation) is employed due to the inherent characteristics of the sputtering method, the first functional layer may be formed on the side wall or the upper surface of the pixel pit of the pixel defining layer, which may affect the uniformity of the subsequent film formation. The first functional layer 130 is formed before the pixel defining layer 140 is formed, so that the above problems are effectively avoided, and the light emitting effect of the display device 100 is finally improved.
In a specific example, the step of forming the first functional layer 130 further includes the steps of: UV treatment or O is applied to the pixel electrode 1202And (4) carrying out plasma treatment. UV treatment or O of the pixel electrode 120 before deposition of the first functional layer 1302Plasma treatment can clean the surface of the pixel electrode 120 and improve the imageThe surface energy of the pixel electrode 120 is beneficial to improving the characteristics of the interface between the first functional layer 130 and the pixel electrode 120, and is further beneficial to improving the performance of the display device 100, including stability and life span.
In a specific example, the step of forming the pixel electrode 120 and the first functional layer 130 on the pixel electrode 120 on the substrate 110 includes the steps of: a pixel electrode material layer is formed on the substrate 110, then a first functional material layer is formed on the pixel electrode material layer, and the pixel electrode material layer and the first functional material layer are patterned to form the pixel electrode 120 and the first functional layer 130. Therefore, the same mask plate is adopted to simultaneously carry out photoetching mask patterning on the pixel electrode material layer and the first functional material layer, so that the steps of a patterning process are reduced, and the manufacturing process and the cost are simplified. It is understood that the pixel electrode material layer may be UV-treated or O-treated before the first functional material layer is formed at this time2And (4) carrying out plasma treatment.
In a specific example, the step of forming the pixel electrode 120 and the first functional layer 130 on the pixel electrode 120 on the substrate 110 includes the steps of: a pixel electrode material layer is formed on the substrate 110, the pixel electrode material layer is patterned to form a pixel electrode 120, and a first functional layer 130 completely covering the pixel electrode 120 and the substrate 110 is formed on the pixel electrode 120.
In a specific example, the first functional layer 130 is formed by an evaporation process and a photolithography process, so that the number of functional layer layers adopting a printing process is reduced, the material accumulation at the edge of the pixel can be effectively reduced, the uniformity of the thin film in the pixel and the area of an effective light emitting area are increased, and the performance of the display device 100 is effectively improved.
In one specific example, the step of forming the top electrode 170 further comprises the steps of: the second functional layer 160 is formed on the light emitting layer 150, and it is understood that the second functional layer 160 is an electron functional layer when the first functional layer 130 is a hole functional layer, and the second functional layer 160 is a hole functional layer when the first functional layer 130 is an electron functional layer.
The display panel according to an embodiment of the present invention includes the display device 100 or the display device 200.
The following are specific examples.
Example 1
S1, as shown in fig. 3, a substrate 110 is provided, and a pixel electrode material layer 121 is formed on the substrate 110 by physical sputtering.
S2, as shown in fig. 4, the first functional material layer 131 is formed on the pixel electrode material layer 121 by physical sputtering, and includes an electron transport material layer and a hole blocking material layer (not shown), where the electron transport material layer is located at a side close to the pixel electrode material layer 121.
S3, as shown in fig. 5, the pixel electrode material layer 121 and the first functional material layer 131 are patterned by performing a photolithography mask using a photomask, thereby forming the pixel electrode 120 and the first functional layer 130.
S4, as shown in fig. 6, an organic photoresist is coated, and the pixel defining layer 140 is formed by means of a photolithography mask.
S5, as shown in fig. 7, the R/G/B quantum dot materials are printed in the pixel pits of the pixel defining layer 140 to form the light emitting layers 150.
S6, as shown in fig. 8, the second functional layer 160, i.e., the hole transport layer, is printed on the light emitting layer 150.
S7, the top electrode 170 is formed on the second functional layer 160 by vapor deposition, and the display device 100 shown in fig. 1 is obtained.
Example 2
S1, as shown in fig. 9, a substrate 210 is provided, and a pixel electrode 220 is formed on the substrate 210 by physical sputtering in combination with photolithography.
S2, as shown in FIG. 10, the pixel electrode 220 is subjected to UV treatment or O2Plasma (O)2plasma) treatment, the surface characteristics of the pixel electrode 220 are improved.
S3, as shown in fig. 11, a hole injection layer as the first functional layer 230 is formed as a common layer (common layer) on the pixel electrode 220 by vapor deposition.
S4, as shown in fig. 12, the pixel defining layer 240 is formed on the first functional layer 230 by coating, exposing and developing.
S5, as shown in fig. 13, the light emitting layer 250 is printed in the pixel pits of the pixel defining layer 240.
S6, as shown in fig. 14, an electron transport layer, which is the second functional layer 260, is formed on the light-emitting layer 250 by vapor deposition.
S8, a top electrode 270 is formed on the second functional layer 260 by vapor deposition, thereby obtaining the display device 200 shown in fig. 2.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A display device includes a substrate, a pixel electrode disposed on the substrate, a first functional layer disposed on the pixel electrode, a pixel defining layer disposed on the first functional layer and forming a pixel pit corresponding to the pixel electrode to at least partially expose the first functional layer, a light emitting layer disposed on the first functional layer in the pixel pit, and a top electrode disposed on the light emitting layer.
2. The display device according to claim 1, wherein the first functional layer is a patterned functional layer, the first functional layer is disposed in correspondence with the pixel electrode to at least partially expose the substrate, and the pixel defining layer covers the exposed substrate and a portion of the first functional layer.
3. The display device according to claim 1, wherein the first functional layer completely covers the pixel electrode and the substrate.
4. The display device according to claim 1, wherein the first functional layer is a hole functional layer comprising one or more of a hole injection layer and a hole transport layer or an electron functional layer comprising one or more of an electron transport layer, a hole blocking layer, and an electron injection layer.
5. The display device according to claim 4, wherein the electron transport layer is made of an N-type inorganic semiconductor material, the electron transport layer has a thickness of 30nm to 80nm, the hole blocking layer is made of a wide band gap insulating material, and the hole blocking layer has a thickness of 3nm to 10 nm.
6. A method for manufacturing a display device, comprising the steps of:
providing a substrate, and forming a pixel electrode and a first functional layer on the pixel electrode on the substrate;
forming a pixel defining layer on the first functional layer, the pixel defining layer forming a pixel pit corresponding to the pixel electrode to at least partially expose the first functional layer;
forming a light emitting layer covering the first functional layer in the pixel pit;
and forming a top electrode on the light-emitting layer to obtain the display device.
7. The production method according to claim 6, wherein the step of forming a pixel electrode and a first functional layer on the pixel electrode on the substrate comprises the steps of: forming a pixel electrode material layer on the substrate, then forming a first functional material layer on the pixel electrode material layer, and patterning the pixel electrode material layer and the first functional material layer to form the pixel electrode and the first functional layer.
8. The production method according to claim 6, wherein the step of forming a pixel electrode and a first functional layer on the pixel electrode on the substrate comprises the steps of: forming a pixel electrode material layer on the substrate, patterning the pixel electrode material layer to form the pixel electrode, and forming the first functional layer on the pixel electrode to completely cover the pixel electrode and the substrate.
9. The production method according to claim 8, characterized by further comprising, before the step of forming the first functional layer, the steps of: subjecting the pixel electrode to UV treatment or O2And (4) carrying out plasma treatment.
10. A display panel comprising the display device according to any one of claims 1 to 5 or the display device produced by the production method according to any one of claims 6 to 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021249162A1 (en) * | 2020-06-12 | 2021-12-16 | 广东聚华印刷显示技术有限公司 | Display device and preparation method therefor |
| CN114023895A (en) * | 2021-11-05 | 2022-02-08 | 合肥福纳科技有限公司 | Quantum dot light-emitting device and preparation method thereof |
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