CN102082188A - Solar cell window layer material and preparation method and application thereof - Google Patents
Solar cell window layer material and preparation method and application thereof Download PDFInfo
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- CN102082188A CN102082188A CN 201010527669 CN201010527669A CN102082188A CN 102082188 A CN102082188 A CN 102082188A CN 201010527669 CN201010527669 CN 201010527669 CN 201010527669 A CN201010527669 A CN 201010527669A CN 102082188 A CN102082188 A CN 102082188A
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Abstract
The invention relates to a solar cell window layer material and a preparation method and application thereof. The solar cell window layer material comprises a high conductivity layer and a wide band gap layer. The invention also provides a composite structure and a solar cell containing the window layer material. Ohmic contact is easily formed between the high conductivity layer of the window layer material and an N-type transparent conductive (TCO) film, so the material has good contact and high transmittance and wide band gap, and the photoelectric conversion efficiency of the solar cell can be improved.
Description
Technical field
The present invention relates to solar cell, relate in particular to solar battery window layer material and its production and application.
Background technology
Window layer material as solar cell requires high permeability, high conductivity and broad-band gap.Present solar cell adopts P-SiC:H directly to contact with N type transparent conductive film as the Window layer material usually.Because the P-SiC:H conductivity is not very big, when the potential barrier between P-SiC:H and the transparent conductive film differs big, can not forms ohmic contact, thereby influence the fill factor, curve factor and the open circuit voltage of battery, and then influence the photoelectric conversion efficiency of battery.Therefore, in order to improve the photoelectric conversion efficiency of solar cell, must improve contacting between N type transparent conductive film and the Window layer material.
Summary of the invention
In order to improve contacting between N type transparent conductive film and the Window layer material, the invention provides a kind of Window layer material of solar cell, concrete scheme is as follows.
A kind of solar battery window layer material comprises that conductivity is more than or equal to 0.15scm
-1The high conductivity layer of (every centimetre of Siemens) and band gap are more than or equal to the wide bandgap layer of 1.8ev (electron-volt).
The material of described high conductivity layer can be microcrystal silicon, nano-silicon or polysilicon.Thickness is 1-5.9nm.
The material of described wide bandgap layer can be amorphous silicon or noncrystalline silicon carbide.Thickness is 1-50nm.
The present invention also provides two kinds of composite constructions.A kind of is to set gradually transparent conductive film and above-mentioned solar battery window layer material on substrate, and the high conductivity layer is between transparent conductive film and the wide bandgap layer.Another kind is to set gradually above-mentioned solar battery window layer material and transparent conductive film on substrate, and the high conductivity layer is between transparent conductive film and the wide bandgap layer.
Described substrate can be glass, stainless steel or polyimides.Described glass for example is low iron ultra-clear glasses.
The material of transparent conductive film (TCO film) can be SnO
2: F, AZO (Al-Doped ZnO), BZO (boron-doping zinc oxide), GZO (gallium-doped zinc oxide), the ITO normally used materials in this area such as (indium tin oxides).With SnO
2: when F is material, the atomic percent of F/Sn (that is, represent the ratio of the number of F atom (or ion) in the material and Sn atom (or ion) number with percentage, below identical.) be 0.5%～1%.When being material with AZO, the atomic percent of Al/Zn is 0.3%～2%.When being material with BZO, the atomic percent of B/Zn is 0.5%～2%.When being material with GZO, the atomic percent of Ga/Zn is 0.5%～2%.When being material with ITO, the atomic percent of In/Sn is 10%～30%.In addition, can also use commercially available FTO (fluorine-doped tin dioxide) transparent conductive film.
The present invention also provides and utilizes the solar cell of above-mentioned Window layer material as the Window layer material.
Form ohmic contact between the high conductivity layer of Window layer material of the present invention and the N type TCO film easily,, therefore can improve the photoelectric conversion efficiency of solar cell so contact is good, and has high permeability and broad-band gap concurrently.
Description of drawings
Fig. 1 is one of the structure of a solar battery window layer material of the present invention example;
Fig. 2 is the peace volt curve of the solar cell for preparing among the embodiment 1;
Fig. 3 is the quantum efficiency curve of the solar cell for preparing among the embodiment 1;
Fig. 4 is the peace volt curve of the solar cell for preparing among the embodiment 2;
Fig. 5 is the quantum efficiency curve of the solar cell for preparing among the embodiment 2.
Embodiment
Enumerate the specific embodiment of the present invention below, but the present invention is not limited to these specific embodiments.
Need to prove, use PECVD (plasma reinforced chemical vapour deposition) equipment (AM corporate system p5200 type) preparation Window layer material in following examples.And adopt step instrument (KLA corporate system Tencor p-16+ type) to measure film thickness, adopt spectrophotometer (Perkin Elmer corporate system lambda750 type) to measure the light transmission rate of film, adopt four point probe resistance meter (Guangzhou silicon grinds the system RTS-9 of semiconductor technology Co., Ltd type) to measure the conductivity of film.
Embodiment 1
(resistivity is greater than among the 10M Ω/cm) at 50-70 ℃ ultra-pure water, (transmitance to the light of 300nm-1100nm is 80.84% will to deposit the FTO transparent conductive film with 1% semiconductor with neutral cleaners, square resistance is 12 Ω/, thickness is 700nm) glass substrate ultrasonic cleaning 15 minutes, residual with ultra-pure water flushing substrate then to there not being cleaning agent, and adopt purity to be higher than 99% nitrogen to dry up substrate.
Then above-mentioned glass substrate is put into first chamber of PECVD equipment, utilized the PECVD method on the FTO transparent conductive film, to prepare the Window layer material of battery.The mist that at first feeds the hydrogen of silane, 520sccm of 1.2sccm (mark condition milliliter per minute) and 0.6sccm trimethyl borine and hydrogen is (in mist, the concentration of trimethyl borine is calculated as 1% with molecular number), at pressure is that 5torr (holder), power are under the condition of 100W, prepare the high conductivity layer that thickness is 3nm with p type microcrystal silicon, its conductivity is 1.5scm
-1(measured value when thickness is 100nm).Feeding the silane of 20sccm, the hydrogen of 200sccm and the methane of 20sccm then, is that 2torr, power are under the condition of 19W at pressure, utilizes noncrystalline silicon carbide to prepare the wide bandgap layer of thickness for 10nm on the high conductivity layer, and its band gap is 1.94ev.
Obtain a kind of composite construction that comprises the Window layer material thus, as shown in Figure 1.
Then, operation manual according to PECVD equipment, at other chambers, on above-mentioned Window layer material, form the p type intrinsic amorphous silicon layer of 300nm, the n type amorphous silicon layer of 15nm, the p type microcrystal silicon layer of 30nm, the intrinsic microcrystalline silicon layer of 1600nm and the n type amorphous silicon layer of 20nm successively.
Taking-up is formed with the substrate of above-mentioned each layer, puts into the chamber of magnetic control sputtering device (Leybold vacuum corporate system UNIVEX 450B type), and sputter formation AZO and Ag composite construction are as back electrode.Wherein, the thickness of AZO is 90nm, and side's resistance is less than 100 Ω/, and the Ag layer thickness is 20nm, and side's resistance is less than 0.001 Ω/.Prepare battery thus.
Utilize solar simulator (Newport corporate system 92193a type) at 25 ℃, AM1.5, light intensity 1000W/m
2Condition under battery is tested, the peace of battery volt curve, quantum efficiency curve are respectively shown in Fig. 2,3.
Embodiment 2
(resistivity will be hanged down iron ultra-clear glasses substrate ultrasonic cleaning 15 minute with 1% semiconductor with neutral cleaners greater than among the 10M Ω/cm) at 50-70 ℃ ultra-pure water.Residual with ultra-pure water flushing substrate then to there not being cleaning agent, and adopt purity to be higher than 99% nitrogen to dry up substrate.
Ultra-clear glasses is put into PVD (physical vapour deposition (PVD)) equipment (oerlikon corporate system univex-450B type), when base vacuum less than 5 * 10
-4Feeding the argon gas of 20sccm during Pa, substrate is heated to 300 ℃, is that 0.8Pa, power are under the condition of 400W at pressure, and utilizing the Al/Zn atomic percent is the AZO transparent conductive film of 1% Al-Doped ZnO deposition 800nm.Adopt 0.5% watery hydrochloric acid that the AZO transparent conductive film is carried out etching then, make thickness be reduced to 600nm.The matte AZO transparent conductive film that obtains through etching is 82.42% to the light transmission rate of 300nm-1100nm, and square resistance is 12 Ω/, and mist degree is greater than 40%.
The substrate that deposits matte AZO transparent conductive film is put into the Window layer material of first chamber preparation battery of PECVD equipment.The mist that at first feeds the hydrogen of silane, 720sccm of 1.2sccm and 0.6sccm trimethyl borine and hydrogen is (in mist, the concentration of trimethyl borine is calculated as 1% with molecular number), at pressure is that 9torr, power are under the condition of 200W, utilize p type microcrystal silicon to prepare the high conductivity layer of thickness for 5nm, its conductivity is 1.7scm
-1(measured value when thickness is 100nm).Feed the silane of 20sccm, the hydrogen of 200sccm and the methane of 20sccm then, pressure be 2.5torr, power be under the condition of 19W be with the noncrystalline silicon carbide material to prepare thickness on the high conductivity layer be the wide bandgap layer of 8nm, its band gap is 1.94ev.
Then, operation manual according to PECVD equipment, at other chambers, on above-mentioned Window layer material, form the p type intrinsic amorphous silicon layer of 300nm, the n type amorphous silicon layer of 15nm, the p type microcrystal silicon layer of 30nm, the intrinsic microcrystalline silicon layer of 1600nm and the n type amorphous silicon layer of 20nm successively.
Taking-up is formed with the substrate of above-mentioned each layer, puts into the chamber of magnetic control sputtering device (Leybold vacuum corporate system UNIVEX 450B type), and sputter formation AZO and Ag composite construction are as back electrode.Wherein, the thickness of AZO is 90nm, and side's resistance is less than 100 Ω/, and the Ag layer thickness is 20nm, and side's resistance is less than 0.001 Ω/.Prepare battery thus.
Utilize equipment and the condition identical with embodiment 1 that battery is tested, the peace of battery lies prostrate curve, quantum efficiency curve respectively shown in Fig. 4,5.
Embodiment 3～6 and comparative example 1
In embodiment 3～6 and comparative example 1, except the high conductivity layer that forms thickness shown in the table 1 and conductivity and shown in the wide bandgap layer of thickness and band gap, operate in the same manner with embodiment 2, make solar cell.And in the same manner solar cell is tested with embodiment 2, the result is as shown in table 1.
Embodiment 7
Operate deposition matte AZO transparent conductive film on substrate in the same manner with embodiment 2.
The substrate that deposits matte AZO transparent conductive film is put into the Window layer material of first chamber preparation battery of PECVD equipment.The mist that at first feeds the hydrogen of silane, 360sccm of 1.2sccm and 0.6sccm trimethyl borine and hydrogen is (in mist, the concentration of trimethyl borine is calculated as 1% with molecular number), at pressure is that 3torr, power are under the condition of 100W, utilize p type microcrystal silicon to prepare the high conductivity layer of thickness for 5nm, its conductivity is 0.15scm
-1(measured value when thickness is 100nm).Feed the silane of 20sccm, the hydrogen of 200sccm and the methane of 20sccm then, pressure be 2.5torr, power be under the condition of 19W be with the noncrystalline silicon carbide material to prepare thickness on the high conductivity layer be the wide bandgap layer of 10nm, its band gap is 1.94ev.
Operate in the same manner with embodiment 2 then, form solar cell.And in the same manner the solar cell for preparing is tested with embodiment 2, the result is as shown in table 1.
Embodiment 8
Operate deposition matte AZO transparent conductive film on substrate in the same manner with embodiment 2.
The substrate that deposits matte AZO transparent conductive film is put into the Window layer material of first chamber preparation battery of PECVD equipment.The mist that at first feeds the hydrogen of silane, 720sccm of 1.2sccm and 0.6sccm trimethyl borine and hydrogen is (in mist, the concentration of trimethyl borine is calculated as 1% with molecular number), at pressure is that 9torr, power are under the condition of 200W, utilize p type microcrystal silicon to prepare the high conductivity layer of thickness for 5nm, its conductivity is 1.7scm
-1(measured value when thickness is 100nm).Feed the silane of 20sccm and the hydrogen of 200sccm then, pressure be 2.5torr, power be under the condition of 19W be with the amorphous silicon material to prepare thickness on the high conductivity layer be the wide bandgap layer of 10nm, its band gap is 1.8ev.
Operate in the same manner with embodiment 2 then, form solar cell.And in the same manner the solar cell for preparing is tested with embodiment 2, the result is as shown in table 1.
Comparative example 2
Operate deposition matte AZO transparent conductive film on substrate in the same manner with embodiment 2.
The substrate that deposits matte AZO transparent conductive film is put into the Window layer material of first chamber preparation battery of PECVD equipment.The mist that at first feeds the hydrogen of silane, 240sccm of 1.2sccm and 0.6sccm trimethyl borine and hydrogen is (in mist, the concentration of trimethyl borine is calculated as 1% with molecular number), at pressure is that 9torr, power are under the condition of 30W, utilize p type microcrystal silicon to prepare the high conductivity layer of thickness for 5nm, its conductivity is 0.001scm
-1(measured value when thickness is 100nm).Feed the silane of 20sccm, the hydrogen of 200sccm and the methane of 20sccm then, pressure be 2.5torr, power be under the condition of 19W be with the noncrystalline silicon carbide material to prepare thickness on the high conductivity layer be the wide bandgap layer of 10nm, its band gap is 1.94ev.
Operate in the same manner with embodiment 2 then, form solar cell.And in the same manner the solar cell for preparing is tested with embodiment 2, the result is as shown in table 1.
Comparative example 3
Operate deposition matte AZO transparent conductive film on substrate in the same manner with embodiment 2.
The substrate that deposits matte AZO transparent conductive film is put into first chamber of PECVD equipment, feed silane, the hydrogen of 200sccm and the methane of 20sccm of 20sccm, at pressure is that 2.5torr, power are to be that material prepares the wide bandgap layer that thickness is 15nm on transparent conductive film with the noncrystalline silicon carbide under the condition of 19W, and its band gap is 1.94ev.
Operate in the same manner with embodiment 2 then, form solar cell.And in the same manner the solar cell for preparing is tested with embodiment 2, the result is as shown in table 1.
As shown in Table 1, do not comprise in Window layer material of the present invention and the prior art that the Window layer material of the single layer structure of high conductivity layer compares, photoelectric conversion efficiency improves.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from design of the present invention and scope.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. a solar battery window layer material is characterized in that, comprises that conductivity is more than or equal to 0.15scm
-1The high conductivity layer and band gap more than or equal to the wide bandgap layer of 1.8ev.
2. solar battery window layer material according to claim 1 is characterized in that, the material of described high conductivity layer is microcrystal silicon, nano-silicon or polysilicon.
3. solar battery window layer material according to claim 1 is characterized in that, the material of described wide bandgap layer is amorphous silicon or noncrystalline silicon carbide.
4. solar battery window layer material according to claim 1 is characterized in that, the thickness of described high conductivity layer is 1-5.9nm.
5. solar battery window layer material according to claim 1 is characterized in that, the thickness of described wide bandgap layer is 1-50nm.
6. a composite construction is characterized in that, set gradually each described solar battery window layer material in transparent conductive film and the claim 1～5 on substrate, and the high conductivity layer is between transparent conductive film and the wide bandgap layer.
7. a composite construction is characterized in that, set gradually each described solar battery window layer material and transparent conductive film in the claim 1～5 on substrate, and the high conductivity layer is between transparent conductive film and the wide bandgap layer.
8. according to claim 6 or 7 described composite constructions, it is characterized in that described substrate is glass, stainless steel or polyimides.
9. a solar cell is characterized in that, utilizes in the claim 1～5 each described solar battery window layer material as the Window layer material.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903767A (en) * | 2012-11-05 | 2013-01-30 | 南开大学 | p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material |
| CN103594536A (en) * | 2013-11-20 | 2014-02-19 | 湖南共创光伏科技有限公司 | Multi-junction multi-lamination silicon-based thin-film solar cell and manufacturing technology thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6150378A (en) * | 1984-08-20 | 1986-03-12 | Mitsui Toatsu Chem Inc | Manufacture of amorphous solar cell |
| CN1697201A (en) * | 2005-06-20 | 2005-11-16 | 南开大学 | P type window layer in use for solar cell of silicon thin film, and preparation method |
| US20070227587A1 (en) * | 2006-03-31 | 2007-10-04 | Walsh Kevin M | Photoelectric Cells Utilizing Accumulation Barriers For Charge Transport |
| CN101510566A (en) * | 2009-03-18 | 2009-08-19 | 南开大学 | Wide bandgap N type nanometer silicon material for silicon film solar battery and preparation method |
| CN201910426U (en) * | 2010-10-27 | 2011-07-27 | 新奥光伏能源有限公司 | Window layer of solar battery and composite structure and solar battery with window layer |
-
2010
- 2010-10-27 CN CN 201010527669 patent/CN102082188A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6150378A (en) * | 1984-08-20 | 1986-03-12 | Mitsui Toatsu Chem Inc | Manufacture of amorphous solar cell |
| CN1697201A (en) * | 2005-06-20 | 2005-11-16 | 南开大学 | P type window layer in use for solar cell of silicon thin film, and preparation method |
| US20070227587A1 (en) * | 2006-03-31 | 2007-10-04 | Walsh Kevin M | Photoelectric Cells Utilizing Accumulation Barriers For Charge Transport |
| CN101510566A (en) * | 2009-03-18 | 2009-08-19 | 南开大学 | Wide bandgap N type nanometer silicon material for silicon film solar battery and preparation method |
| CN201910426U (en) * | 2010-10-27 | 2011-07-27 | 新奥光伏能源有限公司 | Window layer of solar battery and composite structure and solar battery with window layer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903767A (en) * | 2012-11-05 | 2013-01-30 | 南开大学 | p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material |
| CN103594536A (en) * | 2013-11-20 | 2014-02-19 | 湖南共创光伏科技有限公司 | Multi-junction multi-lamination silicon-based thin-film solar cell and manufacturing technology thereof |
| CN103594536B (en) * | 2013-11-20 | 2017-04-19 | 湖南共创光伏科技有限公司 | Multi-junction multi-lamination silicon-based thin-film solar cell and manufacturing technology thereof |
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Application publication date: 20110601 |