CN102074896A - Semiconductor laser array composite coupling method - Google Patents
Semiconductor laser array composite coupling method Download PDFInfo
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- CN102074896A CN102074896A CN 201010596874 CN201010596874A CN102074896A CN 102074896 A CN102074896 A CN 102074896A CN 201010596874 CN201010596874 CN 201010596874 CN 201010596874 A CN201010596874 A CN 201010596874A CN 102074896 A CN102074896 A CN 102074896A
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Abstract
The invention discloses a semiconductor laser array composite coupling method, and belongs to the field of laser technology application. A device in the device consists of N laser bars, N strip reflectors and N reflector fixing racks; N is an integer of more than 1; the N same laser bars for heat conduction and cooling are placed horizontally, and the N same laser bars are mutually arranged in parallel and arranged in equal distance in the height direction; a reflector fixing rack is placed in the propagation direction of each laser bar for heat conduction and cooling, and the N reflector fixing racks are parallel to one another; the reflector fixing racks have shapes that N cubes are hollowed in equal distance in one cube, only one strip reflector is fixed at the height consistency position of the reflector fixing rack and the corresponding laser bar, and the rest N-1 positions are empty; and the reflector fixing racks are placed to form angles of 30 to 45 degrees with the propagation direction of laser. The method improves the power of a semiconductor laser device under the condition of keeping the service life.
Description
Technical field
The present invention relates to the compound coupling technique of semiconductor laser array, be meant the compound coupling process of a kind of high-power semiconductor laser array especially, belong to the laser technology application.
Background technology
Semiconductor laser has advantages such as electro-optical efficiency height, volume be little, in light weight, makes its application become more and more widely.But along with improving constantly of semiconductor laser power, power density constantly increases, and heat radiation and life problems have become to influence semiconductor laser, particularly the key issue of high power semiconductor lasers development.The life problems that how to solve high power semiconductor lasers has become a focus of present research.
By the semiconductor laser crust bar of heat conduction cooling, the life-span of device is decided by the life-span of luminescence unit self, is 40,000 hours; But the semiconductor laser crust bar by the heat conduction cooling is subjected to the restriction of the type of cooling, and can not vertically superpose increases laser power, and therefore the characteristics of this crust bar are that the life-span is long, and power is low.
In traditional handicraft, in order to improve the power of semiconductor laser, be that the crust bar with semiconductor laser carries out solid matter, make the face battle array, adopt the microchannel cooling.This mode has reduced the volume of semiconductor laser, has improved power, but the life-span of the semiconductor laser that also reduces simultaneously.The micro-channel heat sink for semi-conductor laser cooling generally adopts five layers of high heat conduction rectangle oxygen-free copper thin slice with different internal structure to combine the structure that constitutes the microchannel, and every layer thickness is between 0.2～0.3mm.Micro Channel Architecture itself participates in conduction, must adopt the deionized water cooling, deionized water has certain corrosivity to the oxygen-free copper thin slice, causes the life-span of device to reduce to 20,000 hours, therefore, the life-span of adopting the microchannel type of cooling when improving power output, to reduce device.
Summary of the invention
The objective of the invention is to overcome the shortcoming that conventional method influences device lifetime, provide a kind of the compound coupling process of semiconductor laser array.The present invention when improving semiconductor laser power, the life-span of having improved device.
To achieve these goals, the present invention has taked following technical scheme:
The invention provides the compound coupling process of a kind of semiconductor laser array, it is characterized in that: adopt the compound coupling device of following semiconductor laser array to be coupled, this device is by N laser crust bar, and N strip speculum and N mirror mount are formed; N is the integer greater than 1, occurrence need pass through formula-
Calculate Q
SlowRepresent the optical parameter product of used laser crust bar, Q at slow-axis direction
FastRepresent the optical parameter product of used laser crust bar at quick shaft direction;
N the identical equal horizontal positioned of laser crust bar, and the placement that is parallel to each other between the individual identical laser crust of the N bar, short transverse is equidistantly arranged;
On the direction of propagation of each laser crust bar, all place a mirror mount, be parallel to each other between N the mirror mount;
Described mirror mount is shaped as at a cuboid intermediate reach and empties N cuboid, only clings to fixedly a slice strip speculum of bar height consistent location at mirror mount and corresponding laser, and all the other N-1 position is empty;
Described strip speculum, the surface is coated with the reflectance coating that sends optical maser wavelength at laser crust bar, length is greater than the length of laser crust laser that bar is launched at slow-axis direction, the light of the slow-axis direction mirror that can be reflected is reflected fully, the width through the laser of fast axis collimation that short transverse is launched greater than laser crust bar reflects the light of the quick shaft direction mirror that can be reflected fully;
Place at an angle the direction of propagation of mirror mount and laser, and angle is 30 °～45 °, by speculum, and with the horizontal level difference, highly different light beams, the compound horizontal level that is coupled into is identical, highly evenly distributed semiconductor laser array.
Described laser crust bar adopts the heat conduction type of cooling, comprises luminescence unit, positive and negative electrode, fast and slow axis collimating mirror, conduction is heat sink, has improved the bulk life time of semiconductor laser.
Described mirror mount structure is the order word shape, promptly empty N cuboid at the cuboid intermediate reach, its spacing size equates with N spacing of clinging between the bar, N cuboid is corresponding with N crust bar height in short transverse, only cling to fixedly a slice strip speculum of bar height consistent location at mirror mount and corresponding laser, all the other N-1 position is empty.Mirror mount is characterised in that: be used for fixing the strip speculum, the strip speculum is fixed on the ad-hoc location of mirror mount, make the laser that launches from certain laser crust bar by the strip mirror reflects, and from other laser crust bar emitted laser above speculum or below see through.
The present invention passes through speculum, with the horizontal level difference, and highly different light beams, the compound horizontal level that is coupled into is identical, the semiconductor laser array that short transverse is evenly distributed.
Device of the present invention adopts the laser of a plurality of heat conduction coolings to cling to bar, compares with traditional method with microchannel type of cooling raising laser power, under the situation that does not reduce laser output power, has improved the bulk life time of semiconductor laser; With respect to the single heat conduction type of cooling, under the situation that does not reduce the life-span, improved the power of semiconductor laser.
Description of drawings
Fig. 1 high-power semiconductor laser crust bar;
Fig. 2 strip speculum;
Fig. 3 mirror mount;
Axle such as the compound coupling device of Fig. 4 semiconductor laser array is surveyed view
The compound coupling device vertical view of Fig. 5 semiconductor laser array
The compound coupling device end view of Fig. 6 semiconductor laser array
Among the figure: 1, laser crust bar; 2, strip speculum; 3, mirror mount; 4, light path; 5, luminescence unit; 6, fast and slow axis collimating mirror; 7, heat conduction is heat sink; 8, negative electrode; 9, positive electrode.
Embodiment
Below in conjunction with accompanying drawing, specify embodiments of the present invention:
Present embodiment adopts identical 5 laser crust bars as shown in Figure 1, has identical wavelength, identical polarization direction.
At first, with 5 laser crust bars each other parallel, horizontal place, and make it have the identical direction of propagation, adjacent arbitrarily two crust bars are equidistant in short transverse, as Fig. 4～shown in Figure 6.
Second step, on the direction of propagation of each laser crust bar, all place a mirror mount as shown in Figure 3, reserve 5 strip speculum fixed positions on the mirror mount.But only clinging to fixedly a slice strip speculum of bar height consistent location with corresponding laser, all the other 4 positions are empty, do not put eyeglass, as shown in Figure 4.The direction of propagation of mirror mount and laser is 45 ° of placements, the strip mirror surface is coated with the highly reflecting films of corresponding optical maser wavelength, be fixed on the mirror mount, it is consistent that corresponding laser clings to the height of bar on height and the light path, and the size of strip speculum is can just being reflected into the light on the respective optical path suitable fully.
The 3rd step, with the bright dipping simultaneously of 5 laser crust bars, by 45 ° of speculums, with the horizontal level difference, highly different light beams, the compound horizontal level that is coupled into is identical, highly evenly distributed semiconductor laser array.
Present embodiment adopts the laser crust bar of 5 heat conduction coolings, compares than traditional method with microchannel type of cooling raising laser power, and the life-span of laser was brought up to more than 40,000 hours; With respect to the laser crust bar of the single heat conduction type of cooling, present embodiment makes the gross output of laser improve 5 times under the situation that does not reduce the life-span.
Claims (1)
1. compound coupling process of semiconductor laser array is characterized in that: adopt the compound coupling device of following semiconductor laser array to be coupled, this device is by N laser crust bar, N strip speculum and N mirror mount composition; N is the integer greater than 1;
N the identical equal horizontal positioned of laser crust bar, and the placement that is parallel to each other between the individual identical laser crust of the N bar, short transverse is equidistantly arranged;
On the direction of propagation of each laser crust bar, all place a mirror mount, be parallel to each other between N the mirror mount;
Described mirror mount is shaped as at a cuboid intermediate reach and empties N cuboid, only clings to fixedly a slice strip speculum of bar height consistent location at mirror mount and corresponding laser, and all the other N-1 position is empty;
Described strip speculum, the surface is coated with the reflectance coating that sends optical maser wavelength at laser crust bar, length is greater than the length of laser crust laser that bar is launched at slow-axis direction, the light of the slow-axis direction mirror that can be reflected is reflected fully, the width through the laser of fast axis collimation that short transverse is launched greater than laser crust bar reflects the light of the quick shaft direction mirror that can be reflected fully;
Place at an angle the direction of propagation of mirror mount and laser, and angle is 30 °～45 °, by speculum, and with the horizontal level difference, highly different light beams, the compound horizontal level that is coupled into is identical, highly evenly distributed semiconductor laser array.
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| CN 201010596874 CN102074896A (en) | 2010-12-20 | 2010-12-20 | Semiconductor laser array composite coupling method |
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| CN 201010596874 CN102074896A (en) | 2010-12-20 | 2010-12-20 | Semiconductor laser array composite coupling method |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263375A (en) * | 2011-06-20 | 2011-11-30 | 中国电子科技集团公司第十三研究所 | Semiconductor laser capable of realizing wide-angle uniform shining and light field splicing method |
| US8891579B1 (en) * | 2011-12-16 | 2014-11-18 | Nlight Photonics Corporation | Laser diode apparatus utilizing reflecting slow axis collimators |
| US9705289B2 (en) | 2014-03-06 | 2017-07-11 | Nlight, Inc. | High brightness multijunction diode stacking |
| US9720145B2 (en) | 2014-03-06 | 2017-08-01 | Nlight, Inc. | High brightness multijunction diode stacking |
| US10153608B2 (en) | 2016-03-18 | 2018-12-11 | Nlight, Inc. | Spectrally multiplexing diode pump modules to improve brightness |
| US10261261B2 (en) | 2016-02-16 | 2019-04-16 | Nlight, Inc. | Passively aligned single element telescope for improved package brightness |
| US10283939B2 (en) | 2016-12-23 | 2019-05-07 | Nlight, Inc. | Low cost optical pump laser package |
| US10763640B2 (en) | 2017-04-24 | 2020-09-01 | Nlight, Inc. | Low swap two-phase cooled diode laser package |
| US10761276B2 (en) | 2015-05-15 | 2020-09-01 | Nlight, Inc. | Passively aligned crossed-cylinder objective assembly |
| US10833482B2 (en) | 2018-02-06 | 2020-11-10 | Nlight, Inc. | Diode laser apparatus with FAC lens out-of-plane beam steering |
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| US6898222B2 (en) * | 2000-12-06 | 2005-05-24 | Jenoptik Laserdiode Gmbh | Diode laser arrangement with a plurality of diode laser arrays |
| CN1933266A (en) * | 2006-09-29 | 2007-03-21 | 清华大学 | Laser array device |
| CN201191323Y (en) * | 2007-11-09 | 2009-02-04 | 王仲明 | Construction integrating duplex splitted semiconductor laser into single optical fiber |
| US20090245315A1 (en) * | 2008-03-28 | 2009-10-01 | Victor Faybishenko | Laser diode assemblies |
| CN101673922A (en) * | 2009-09-18 | 2010-03-17 | 深圳市大族激光科技股份有限公司 | Semiconductor laser space arrangement array |
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| US6898222B2 (en) * | 2000-12-06 | 2005-05-24 | Jenoptik Laserdiode Gmbh | Diode laser arrangement with a plurality of diode laser arrays |
| CN1933266A (en) * | 2006-09-29 | 2007-03-21 | 清华大学 | Laser array device |
| CN201191323Y (en) * | 2007-11-09 | 2009-02-04 | 王仲明 | Construction integrating duplex splitted semiconductor laser into single optical fiber |
| US20090245315A1 (en) * | 2008-03-28 | 2009-10-01 | Victor Faybishenko | Laser diode assemblies |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263375A (en) * | 2011-06-20 | 2011-11-30 | 中国电子科技集团公司第十三研究所 | Semiconductor laser capable of realizing wide-angle uniform shining and light field splicing method |
| CN102263375B (en) * | 2011-06-20 | 2013-07-03 | 中国电子科技集团公司第十三研究所 | Semiconductor laser capable of realizing wide-angle uniform shining and light field splicing method |
| US8891579B1 (en) * | 2011-12-16 | 2014-11-18 | Nlight Photonics Corporation | Laser diode apparatus utilizing reflecting slow axis collimators |
| US9455552B1 (en) | 2011-12-16 | 2016-09-27 | Nlight, Inc. | Laser diode apparatus utilizing out of plane combination |
| US9705289B2 (en) | 2014-03-06 | 2017-07-11 | Nlight, Inc. | High brightness multijunction diode stacking |
| US9720145B2 (en) | 2014-03-06 | 2017-08-01 | Nlight, Inc. | High brightness multijunction diode stacking |
| US10761276B2 (en) | 2015-05-15 | 2020-09-01 | Nlight, Inc. | Passively aligned crossed-cylinder objective assembly |
| US10261261B2 (en) | 2016-02-16 | 2019-04-16 | Nlight, Inc. | Passively aligned single element telescope for improved package brightness |
| US10564361B2 (en) | 2016-02-16 | 2020-02-18 | Nlight, Inc. | Passively aligned single element telescope for improved package brightness |
| US10418774B2 (en) | 2016-03-18 | 2019-09-17 | Nlight, Inc. | Spectrally multiplexing diode pump modules to improve brightness |
| US10153608B2 (en) | 2016-03-18 | 2018-12-11 | Nlight, Inc. | Spectrally multiplexing diode pump modules to improve brightness |
| US10283939B2 (en) | 2016-12-23 | 2019-05-07 | Nlight, Inc. | Low cost optical pump laser package |
| US10797471B2 (en) | 2016-12-23 | 2020-10-06 | Nlight Inc. | Low cost optical pump laser package |
| US11424598B2 (en) | 2016-12-23 | 2022-08-23 | Nlight, Inc. | Low cost optical pump laser package |
| US10763640B2 (en) | 2017-04-24 | 2020-09-01 | Nlight, Inc. | Low swap two-phase cooled diode laser package |
| US10833482B2 (en) | 2018-02-06 | 2020-11-10 | Nlight, Inc. | Diode laser apparatus with FAC lens out-of-plane beam steering |
| US11979002B2 (en) | 2018-02-06 | 2024-05-07 | Nlight, Inc. | Diode laser apparatus with FAC lens out-of-plane beam steering |
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Application publication date: 20110525 |