CN101854026B - Full solid-state laser for integrated laser diode intracavity pump - Google Patents
Full solid-state laser for integrated laser diode intracavity pump Download PDFInfo
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- CN101854026B CN101854026B CN2010101777349A CN201010177734A CN101854026B CN 101854026 B CN101854026 B CN 101854026B CN 2010101777349 A CN2010101777349 A CN 2010101777349A CN 201010177734 A CN201010177734 A CN 201010177734A CN 101854026 B CN101854026 B CN 101854026B
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Abstract
The invention relates to a full solid-state laser for an integrated laser diode intracavity pump, which is characterized in that a laser diode chip, a micro-optics shaper and a solid laser medium are sequentially integrated between an upper heat sink and a lower heat sink; a laser diode resonant cavity is formed on the back end surface of a total reflection film plated on the laser diode chip for the pump light and the left side face of a total reflection film plated on the solid laser medium for the pump light; an antireflection film is respectively plated on the natural surfaces among the laser diode chip, the micro-optics shaper and the solid laser medium; resonant cavity lenses at the two ends of the solid laser medium form a resonant cavity of the solid laser; and the anode and the cathode of the laser diode chip are respectively led out from the lower heat sink and the upper heat sink. The invention greatly reduces the unit power weight ratio of the full solid-state laser, increases the electronic-optic conversion efficiency of the full solid-state laser to over 35 percent, has the expansibility that a plurality of modules are connected in series, and ensures large-scale standard production.
Description
Technical field
The present invention relates to all solid state laser, particularly a kind of all solid state laser of integrated laser diode intracavity pump.
Background technology
Traditionally, laser diode-pumped all solid state laser all adopts the structure of discrete, laser diode (or laser diode array) is formed a module, include laser chip, heat sink, electrode and optical alignment system etc., and solid-state laser is that main composition constitutes a module with laser-activated medium, comprise crystal (or optical fiber), cooling system, optical system, transfer Q and clamping system and mechanical structure etc., cause whole solid state laser bulky thus, electro-optical efficiency is low, can't satisfy modern Application to weight per unit power than (promptly obtaining the required laser weight of 1 watt of laser output) and energy-conservation demand, the scope of application of all solid state laser can only be limited in traditional relatively sector application, can't be widely used in meticulous machining, in the industry that Aero-Space and hand-held processing equipment etc. become more and more important.
Summary of the invention
For being reduced to, the volume with existing laser diode-pumped all solid state laser can be used for severe rugged environment, further improve the electro-optical efficiency of laser diode-pumped all solid state laser, the present invention proposes a kind of all solid state laser of integrated laser diode intracavity pump, this laser not only greatly reduces the weight per unit power ratio of all solid state laser, and the electro-optical efficiency of present all solid state laser (and plug efficiency) can be no more than 25% and be increased to more than 35% by present.
Technical solution of the present invention is as follows:
A kind of all solid state laser of integrated laser diode intracavity pump, be characterized on down heat sink, adopting the method for indium welding or heat conductive silica gel gummed respectively with laser diode chip in the L type, the position of micro-optic reshaper (105) and solid laser medium is fixing successively, packing material is added at two ends, will with the L type of described down heat sink symmetry on heat sink cover symmetrically after, fastening integrated as a whole by screw, the be all-trans plating of the rear end face of film and solid laser medium of described laser diode chip plating constitutes the resonant cavity of laser diode to the left surface of the film that is all-trans of pump light, described laser diode chip, natural face between micro-optic reshaper and the solid laser medium plates the antireflective film to pump light respectively, the resonator mirror at described solid laser medium two ends constitutes the resonant cavity of solid state laser, and the anode of described laser diode chip and negative electrode are respectively from described heat sink and last heat sink drawing down.
Described solid laser medium is laser crystal, laser ceramics or the fiber array of thin plate bar shaped.
Described Solid State Laser resonant cavity is by two end faces plating reflectance coating or etched diffraction gratings of laser medium or utilize annular coupler or outside speculum constitutes.
Advantage of the present invention is:
1, the present invention is all solid state laser of the high-power output of integrated, miniature, high efficiency and high light beam quality.
2, greatly reduced the weight per unit power ratio of present laser diode-pumped all solid state laser, electro-optical efficiency has obtained very big raising simultaneously, and than traditional all solid state laser, electro-optical efficiency is brought up to more than 35% by less than 25%;
3, owing to the packaging technology with laser diode combines, increase the stability and the reliability of whole system, possessed the possibility of standardization large-scale mass production.
Description of drawings
Fig. 1 is the structural representation of all solid state laser of integrated laser diode intracavity pump of the present invention.
Fig. 2 is the pump light in laser crystal of the present invention and the diode chip for backlight unit and the beam sizes distribution map of laser.
Fig. 3 is the-embodiment light path schematic diagram of the present invention.
Fig. 4 is a second embodiment of the present invention light path schematic diagram.
Fig. 5 is a third embodiment of the present invention light path schematic diagram.
Embodiment
The invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is the structural representation of all solid state laser of integrated laser diode intracavity pump of the present invention.As seen from the figure, the all solid state laser of integrated laser diode intracavity pump of the present invention, its formation is to adopt the method for indium welding or heat conductive silica gel gummed with laser diode chip 104 on following heat sink 103 respectively in the L type, the position of micro-optic reshaper 105 and solid laser medium 106 is fixing successively, packing material 102 is added at two ends, 108, will with the L type of described down heat sink 103 symmetries on heat sink 101 cover, fastening integrated as a whole by screw, the be all-trans plating of the rear end face 111 of film and solid laser medium 106 of described laser diode chip 104 platings constitutes the resonant cavity of laser diodes to the left surface 115 of the film that is all-trans of pump light, described laser diode chip 104, natural face between micro-optic reshaper 105 and the solid laser medium 106 plates the antireflective film 110 to pump light respectively, 112 and 113, the resonator mirror 114 resonant cavity mirrors 116 at described solid laser medium 106 two ends constitute the resonant cavity of solid state laser, and the anode 107 of described laser diode chip 104 and negative electrode 109 heat sink 103 and last heat sink 101 are drawn down from described respectively.
The rear end of described laser diode chip 104 is the multilayer dielectric film 111 (or other has the structure of reflection function) of reflection that pumping wave is grown tall, the other end is the multilayer dielectric film 110 to the pumping wavelength anti-reflection, the negative electrode 109 of laser diode is drawn from conductive heat sink 101 surface, and anode 107 is drawn on conductive following heat sink 103.
Described laser medium 106 is the laser medium of lamellar shape, and active medium 106 can be the fiber array etc. of laser crystal, laser ceramics or the lath-shaped of lath-shaped.Two ends 114 and 116 resonant cavitys at laser medium by mirror coating (or grating or annular coupler) formation solid state laser.Be the multilayer dielectric film to the pumping wavelength anti-reflection in a side end face 113 of laser medium, another side end face 115 is multilayer dielectric film of reflection that pumping wave is grown tall.Laser medium and laser diode chip form the structure of intracavity pump.
Described micro-optic reshaper 105 can be little cylindrical mirror, microprism or little aspherical mirror, function is that the beam sizes of laser in the beam sizes of the pump light of laser diode outgoing and the laser medium is mated, increase the beam sizes of output laser, reduce the angle of divergence.The optical field distribution of laser beam and pump beam as shown in Figure 2 in laser medium 106 and laser diode chip 104, pump light 201 overlaps with laser beam 202 in laser medium 106 fully by micro-optic reshaper 105 backs, has improved laser-conversion efficiency effectively.
Described Solid State Laser resonant cavity is by at two exiting surfaces 114 and the 116 plating reflectance coating or the etched diffraction gratings of laser medium 106 or utilize annular coupler or outside speculum constitutes.
Embodiment 1
As shown in Figure 3, laser medium 106 is made of Nd:YAG crystal lath 301, it is thick that crystal lath 301 is of a size of 1mm, 8mm is wide, 10mm is long, the doping content of Nd ion is 1%, be coated with wavelength 1064nm reflectivity greater than 99.7% reflectance coating at an end face 116 of crystal lath 301, being coated with wavelength 1064nm reflectivity at another end face 114 of crystal lath 301 is 75% partial reflection film, be coated with in a side end face 113 of crystal lath 301 the 808nm emissivity less than 0.2% antireflective film, be coated with in another side 115 of crystal lath 301 the 808nm emissivity greater than 99.7% the film that is all-trans.Laser diode chip 104 is the chip of AsGaAl multi-layer quantum well structure, and the work centre wavelength of laser diode chip is 808nm, and the light-emitting zone width is 0.2mm, and light-emitting zone spacing 0.5mm has 19 luminous zones and is distributed on the long crust bar of 10mm.Pump light comes and goes vibration shown in arrow 302 between laser diode chip 104 and crystal lath 301, the transmission direction of output laser is shown in arrow 303.When add 1.7V between anode 107 and negative electrode 109, during the 16A electric current, test shows, the power output of laser of the present invention are 10W, and electro-optical efficiency is 36.7%.
Embodiment 2
As shown in Figure 4, laser medium 106 is made up of fiber array 403 among the embodiment 2, fiber array 403 by 4 ytterbium-doped double-cladded-layer silica fibers that remove surrounding layer side by side welding form, 500 microns of the inner cladding diameters of optical fiber, the inner cladding numerical aperture is 0.46,20 microns of the core diameters of yb-doped double-clad fiber, numerical aperture is 0.07, the doping content of the trivalent ytterbium ion in the fibre core is 4000ppm.4 double clad silica fibers are by the method for parallel fused biconical taper, form the fibre-optic waveguide light cone of gradual change, when between anode 107 and negative electrode 109, adding 1.7V, during the 16A electric current, test result is, the power output of present embodiment laser is 12W, and output wavelength 1100nm, electro-optical efficiency are 44%.
Embodiment 3
Utilize the method that is connected in series that a plurality of modules are coupled together and obtain higher power output.As shown in Figure 5, utilize the mode of fused fiber splice to be connected in series 3 optic modules 501 in the present embodiment, the structure of optic module 501 as shown in Figure 4.The optical fiber core diameter of fused fiber splice point 502 is consistent with numerical aperture, inserts loss less than 0.1dB.The power output of each module is 12W, and the module gross output of 3 polyphones is 36W, and electro-optical efficiency still is 44%.
In sum, the present invention is all solid state laser of the high-power output of integrated, miniature, high efficiency and high light beam quality.Greatly reduced the weight per unit power ratio of present laser diode-pumped all solid state laser, electro-optical efficiency has obtained very big raising simultaneously, and than traditional all solid state laser, electro-optical efficiency is brought up to more than 35% by less than 25%; Owing to combine with the packaging technology of laser diode, increased the stability and the reliability of whole system, possess the possibility of standardization large-scale mass production.The present invention also has the autgmentability of a plurality of module polyphones.
Claims (4)
1. all solid state laser of an integrated laser diode intracavity pump, it is characterized in that on heat sink under the L type (103), adopting respectively the method for indium welding or heat conductive silica gel gummed with laser diode chip (104), the position of micro-optic reshaper (105) and solid laser medium (106) is fixing successively, packing material (102 is added at two ends, 108), will with L type of described down heat sink (103) symmetry on after heat sink (101) cover, fastening integrated as a whole by screw, be all-trans the plating of the rear end face (111) of film and solid laser medium (106) to the resonant cavity of left surface (115) the formation laser diode of the film that is all-trans of pump light in described laser diode chip (104) plating, described laser diode chip (104), natural face between micro-optic reshaper (105) and the solid laser medium (106) plates the antireflective film (110 to pump light respectively, 112,113), the top resonator mirror (116) of described solid laser medium (106) and below resonator mirror (114) constitute the resonant cavity of solid state laser, and the anode (107) of described laser diode chip (104) and negative electrode (109) are drawn from described heat sink (103) and last heat sink (101) down respectively.
2. all solid state laser of integrated laser diode intracavity pump according to claim 1 is characterized in that described solid laser medium (106) is laser crystal, laser ceramics or the fiber array of lamellar shape.
3. all solid state laser of integrated laser diode intracavity pump according to claim 1 is characterized in that described Solid State Laser resonant cavity is plated reflectance coating or etched diffraction gratings or utilized annular coupler or outside speculum formation by two end faces of laser medium (106).
4. all solid state laser of integrated laser diode intracavity pump according to claim 1 is characterized in that described micro-optic reshaper (105) is little cylindrical mirror, microprism or little aspherical mirror.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101777349A CN101854026B (en) | 2010-05-18 | 2010-05-18 | Full solid-state laser for integrated laser diode intracavity pump |
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| CN2010101777349A CN101854026B (en) | 2010-05-18 | 2010-05-18 | Full solid-state laser for integrated laser diode intracavity pump |
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| CN101854026B true CN101854026B (en) | 2011-11-09 |
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| CN102340094A (en) * | 2011-03-04 | 2012-02-01 | 南京长青激光科技有限责任公司 | Structure and method for packaging high-power blue-green laser chip |
| CN102324690B (en) * | 2011-09-29 | 2014-08-27 | 马英俊 | Semiconductor solid laser |
| US10069271B2 (en) * | 2014-06-02 | 2018-09-04 | Nlight, Inc. | Scalable high power fiber laser |
| CN104577698A (en) * | 2014-12-29 | 2015-04-29 | 苏州凯锝微电子有限公司 | YAG (yttrium aluminum garnet) laser |
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| JP3975066B2 (en) * | 2001-10-12 | 2007-09-12 | 株式会社トプコン | Laser oscillator |
| JP4047131B2 (en) * | 2002-10-18 | 2008-02-13 | 株式会社オーク製作所 | Solid state laser equipment |
| JP3741108B2 (en) * | 2003-03-18 | 2006-02-01 | ソニー株式会社 | Laser light emitting module |
| CN1822452A (en) * | 2006-03-22 | 2006-08-23 | 中国科学院上海光学精密机械研究所 | Solid plate strip laser using lens conduct coupling |
| JP2008010603A (en) * | 2006-06-29 | 2008-01-17 | Ricoh Co Ltd | Semiconductor laser-excited solid-state laser device, optical scanning apparatus, image forming device, and display unit |
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