CN102071407A - Method for forming anti-reflecting film on PN junction silicon chip - Google Patents
Method for forming anti-reflecting film on PN junction silicon chip Download PDFInfo
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- CN102071407A CN102071407A CN2011100262918A CN201110026291A CN102071407A CN 102071407 A CN102071407 A CN 102071407A CN 2011100262918 A CN2011100262918 A CN 2011100262918A CN 201110026291 A CN201110026291 A CN 201110026291A CN 102071407 A CN102071407 A CN 102071407A
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- silicon chip
- reflecting film
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- solar cell
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a method for preparing an anti-reflecting film for a solar cell, and particularly discloses a method for forming an anti-reflecting film on a PN junction silicon chip. The method for forming the anti-reflecting film on the PN junction silicon chip is characterized in that: a silicon nitride film layer is deposited on the surface of the PN junction silicon chip, the deposition thickness is 60 to 80 nanometers, the refractive index is 1.9 to 2.0, the adopted process gases comprise NH3 and SiH4, and the ratio of the NH3 to the SiH4 is 8-9.5: 1. Therefore, the method has the advantages of enhancing the conversion efficiency of a cell unit in the production of a solar cell assembly, increasing the light receiving area of the cell unit, avoiding the generation of 'heat island effect', improving the acid and alkali corrosion resistance of the assembly, saving raw materials, reducing the production cost, reducing the working process and saving manpower and material resources.
Description
(1) technical field
The present invention relates to the method that a kind of solar cell prepares antireflective coating, particularly a kind of method that on the PN junction silicon, forms antireflective coating.
(2) background technology
Crystal silicon solar energy battery is to be transform light energy the opto-electronic device of electric energy, and its photoelectric transformation efficiency is defined as gross output and the ratio that incides the sunlight total power of solar cell surface.In order to improve the photoelectric transformation efficiency of crystal silicon solar energy battery, should reduce the loss of battery surface reflection of light, increase optical transmission, two kinds of methods of main at present employing: (1) corrodes into matte with battery surface, increases the incident number of times of light at battery surface; (2) plate the antireflective coating of one or more layers optical property coupling at battery surface, the making of antireflective coating directly affects solar cell to the reflection of incident light rate, and the raising of solar battery efficiency is played important effect.
(3) summary of the invention
The present invention provides a kind of method that forms antireflective coating on the PN junction silicon that strengthens efficiency of conversion, antiacid caustic corrosion performance in order to remedy the deficiencies in the prior art.
The present invention is achieved through the following technical solutions:
A kind of method that forms antireflective coating on the PN junction silicon, it is characterized in that: at PN junction silicon surface deposition silicon nitride film layer, deposit thickness is 60-80nm, and specific refractory power is 1.9-2.0, and the process gas that is adopted comprises NH
3And SiH
4, NH
3And SiH
4Ratio be 8-9.5: 1.
The reflectivity of polished silicon overview is 35%, in order to cut down the overview reflection, improves the efficiency of conversion of battery, needs to pile up one deck silicon nitride antireflective coating.Often take the PECVD legal system to be equipped with antireflective coating in the industrial production now.PECVD is that the plasma enhanced chemical gas phase is piled up, its technological principle is to handle high-temperature plasma to make energy source, sample places on the negative electrode of glow discharge under the subatmospheric, handles glow discharge and makes sample be warmed up to predetermined temperature, feeds an amount of reactant gases SiH then
4And NH
3, gas is through series of chemical and plasma reaction, and forming solid film in the sample overview is silicon nitride film.Generally speaking, the film thickness that the mode of using this plasma enhanced chemical gas phase to pile up is piled up is about 60-80nm, and there is the optical effect in the film of thickness like this.Handle film and intervene principle, reflection of light is greatly cut down, the short-circuit current of battery and output just have very big increase, and efficient also has suitable raising.
Thermodiffusion electricity slurry source is best a kind of of deposition effect in all PECVD (plasma reinforced chemical vapour deposition) technology, ionic bombardment power a little less than, therefore less, and can not be penetrated in the silicon to the destruction of surface structure of solar cell.The antireflective coating that the deposition back forms is even, its biggest advantage is can not produce " tropical island effect ", do not have the influence of sheltering from heat or light, can make conversion efficiency of solar cell improve 2.14%, therefore solar module has just had double effects in antireflective, the photoelectric transformation efficiency of battery unit can reach 22% like this, even higher.
Therefore, the invention has the beneficial effects as follows: in the production of solar module, can strengthen the efficiency of conversion of battery unit; Can increase the light-receiving area of battery unit, avoid the generation of " tropical island effect "; The antiacid caustic corrosion performance of assembly is improved; Save material, reduce production costs; Reduce flow chart, use manpower and material resources sparingly.
(4) embodiment
The present invention forms the method for antireflective coating on the PN junction silicon, be on PN junction silicon surface, and the thermodiffusion electricity slurry source technology in employing PECVD (plasma reinforced chemical vapour deposition) technology is finished, and this technology is a prior art, no longer describes in detail.Concrete, the thickness of silicon nitride film layer is 60-80nm, and specific refractory power is 1.9-2.0, and for example this thicknesses of layers can be 70nm, certainly suitably increase or reduce its thickness as required, silicon chip is had good passivation and can not cause optical absorption loss as long as can satisfy.Therefore, the invention has the beneficial effects as follows: in the production of solar module, can strengthen the efficiency of conversion of battery unit; Can increase the light-receiving area of battery unit, avoid the generation of " tropical island effect "; The antiacid caustic corrosion performance of assembly is improved; Save material, reduce production costs; Reduce flow chart, use manpower and material resources sparingly.
Claims (1)
1. method that forms antireflective coating on the PN junction silicon, it is characterized in that: at PN junction silicon surface deposition silicon nitride film layer, deposit thickness is 60-80nm, and specific refractory power is 1.9-2.0, and the process gas that is adopted comprises NH
3And SiH
4, NH
3And SiH
4Ratio be 8-9.5: 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100262918A CN102071407A (en) | 2011-01-25 | 2011-01-25 | Method for forming anti-reflecting film on PN junction silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100262918A CN102071407A (en) | 2011-01-25 | 2011-01-25 | Method for forming anti-reflecting film on PN junction silicon chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102071407A true CN102071407A (en) | 2011-05-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100262918A Pending CN102071407A (en) | 2011-01-25 | 2011-01-25 | Method for forming anti-reflecting film on PN junction silicon chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768566A (en) * | 2021-02-01 | 2021-05-07 | 上海理工大学 | Photocell preparation method based on molybdenum disulfide as carrier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
-
2011
- 2011-01-25 CN CN2011100262918A patent/CN102071407A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
Non-Patent Citations (2)
| Title |
|---|
| 《功能材料》 20071231 吴清鑫等 PECVD法生长氮化硅工艺的研究 第703-705、710页 1 第38卷, 第5期 * |
| 《材料科学与工程》 19970331 吴大维等 PECVD法氮化硅薄膜的研究 第46-49页 1 第15卷, 第1期 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768566A (en) * | 2021-02-01 | 2021-05-07 | 上海理工大学 | Photocell preparation method based on molybdenum disulfide as carrier |
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Application publication date: 20110525 |