CN102066919B - 衬底的声学镜上的压电声学谐振器的装置、用于制造该装置的方法以及该装置的应用 - Google Patents
衬底的声学镜上的压电声学谐振器的装置、用于制造该装置的方法以及该装置的应用 Download PDFInfo
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- CN102066919B CN102066919B CN200980122904.9A CN200980122904A CN102066919B CN 102066919 B CN102066919 B CN 102066919B CN 200980122904 A CN200980122904 A CN 200980122904A CN 102066919 B CN102066919 B CN 102066919B
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- mirror
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- resonator
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- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000009413 insulation Methods 0.000 claims abstract description 67
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 19
- 239000011810 insulating material Substances 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000011156 evaluation Methods 0.000 abstract 2
- 238000010292 electrical insulation Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000010008 shearing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000000615 nonconductor Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2437—Piezoelectric probes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0557—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Engineering & Computer Science (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- Transducers For Ultrasonic Waves (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008029378A DE102008029378B4 (de) | 2008-06-20 | 2008-06-20 | Anordnung eines piezoakustischen Resonators auf einem akustischen Spiegel eines Substrats, Verfahren zum Herstellen der Anordnung und Verwendung der Anordnung |
| DE102008029378.4 | 2008-06-20 | ||
| PCT/EP2009/057341 WO2009153235A1 (fr) | 2008-06-20 | 2009-06-15 | Agencement d’un résonateur piézoacoustique sur un miroir acoustique d’un substrat, procédé pour produire un tel agencement et utilisation de ce dernier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102066919A CN102066919A (zh) | 2011-05-18 |
| CN102066919B true CN102066919B (zh) | 2014-07-23 |
Family
ID=40934124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980122904.9A Active CN102066919B (zh) | 2008-06-20 | 2009-06-15 | 衬底的声学镜上的压电声学谐振器的装置、用于制造该装置的方法以及该装置的应用 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8536764B2 (fr) |
| EP (1) | EP2288912B1 (fr) |
| JP (1) | JP5006989B2 (fr) |
| CN (1) | CN102066919B (fr) |
| DE (1) | DE102008029378B4 (fr) |
| WO (1) | WO2009153235A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013140648A1 (fr) | 2012-03-21 | 2013-09-26 | オリンパスメディカルシステムズ株式会社 | Instrument de traitement endoscopique |
| US9862592B2 (en) | 2015-03-13 | 2018-01-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | MEMS transducer and method for manufacturing the same |
| DE102015220855A1 (de) * | 2015-10-26 | 2017-04-27 | Robert Bosch Gmbh | Sensorvorrichtung zur Erfassung mindestens einer Strömungseigenschaft eines fluiden Mediums |
| US20180003677A1 (en) * | 2016-06-30 | 2018-01-04 | Intel Corporation | Piezoelectric package-integrated chemical species-sensitive resonant devices |
| US10686425B2 (en) | 2017-06-30 | 2020-06-16 | Texas Instruments Incorporated | Bulk acoustic wave resonators having convex surfaces, and methods of forming the same |
| EP3733310A1 (fr) * | 2019-04-30 | 2020-11-04 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO | Réseaux de transducteurs à membrane piézoélectrique acoustique avec vibrations de membrane localisées |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004017063A2 (fr) * | 2002-07-19 | 2004-02-26 | Siemens Aktiengesellschaft | Dispositif et procede pour detecter une substance |
| CN1864063A (zh) * | 2003-10-08 | 2006-11-15 | 皇家飞利浦电子股份有限公司 | 体声波传感器 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US201305A (en) * | 1878-03-12 | Improvement in sheet-metal-flanging machines | ||
| US125489A (en) * | 1872-04-09 | Improvement in money-pockets for garments | ||
| US48802A (en) * | 1865-07-18 | Improvement in shirt-collars | ||
| DE10147075A1 (de) * | 2001-09-25 | 2003-04-30 | Infineon Technologies Ag | Piezoelektrisches Bauelement und Verfahren zu dessen Herstellung |
| US7989851B2 (en) * | 2002-06-06 | 2011-08-02 | Rutgers, The State University Of New Jersey | Multifunctional biosensor based on ZnO nanostructures |
| DE20221966U1 (de) * | 2002-06-06 | 2010-02-25 | Epcos Ag | Mit akustischen Wellen arbeitendes Bauelement mit einem Anpaßnetzwerk |
| JP2004187204A (ja) | 2002-12-06 | 2004-07-02 | Sony Corp | 音響共振器および信号処理装置 |
| US6992400B2 (en) * | 2004-01-30 | 2006-01-31 | Nokia Corporation | Encapsulated electronics device with improved heat dissipation |
| DE102004058064A1 (de) * | 2004-12-01 | 2006-06-08 | Siemens Ag | Biochemisches Halbleiterchiplabor mit angekoppeltem Adressier- und Steuerchip und Verfahren zur Herstellung desselben |
| US7248131B2 (en) * | 2005-03-14 | 2007-07-24 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Monolithic vertical integration of an acoustic resonator and electronic circuitry |
| US7436269B2 (en) * | 2005-04-18 | 2008-10-14 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustically coupled resonators and method of making the same |
| FR2890490A1 (fr) | 2005-09-05 | 2007-03-09 | St Microelectronics Sa | Support de resonateur acoustique et circuit integre correspondant |
| US7378781B2 (en) * | 2005-09-07 | 2008-05-27 | Nokia Corporation | Acoustic wave resonator with integrated temperature control for oscillator purposes |
| FR2927743B1 (fr) * | 2008-02-15 | 2011-06-03 | St Microelectronics Sa | Circuit de filtrage comportant des resonateurs acoustiques couples |
-
2008
- 2008-06-20 DE DE102008029378A patent/DE102008029378B4/de active Active
-
2009
- 2009-06-15 JP JP2011514008A patent/JP5006989B2/ja active Active
- 2009-06-15 CN CN200980122904.9A patent/CN102066919B/zh active Active
- 2009-06-15 EP EP09765815.7A patent/EP2288912B1/fr active Active
- 2009-06-15 WO PCT/EP2009/057341 patent/WO2009153235A1/fr active Application Filing
- 2009-06-15 US US12/997,094 patent/US8536764B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004017063A2 (fr) * | 2002-07-19 | 2004-02-26 | Siemens Aktiengesellschaft | Dispositif et procede pour detecter une substance |
| CN1864063A (zh) * | 2003-10-08 | 2006-11-15 | 皇家飞利浦电子股份有限公司 | 体声波传感器 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2288912B1 (fr) | 2019-05-29 |
| DE102008029378B4 (de) | 2010-04-15 |
| DE102008029378A1 (de) | 2009-12-31 |
| CN102066919A (zh) | 2011-05-18 |
| WO2009153235A1 (fr) | 2009-12-23 |
| US20110089786A1 (en) | 2011-04-21 |
| JP2011524709A (ja) | 2011-09-01 |
| US8536764B2 (en) | 2013-09-17 |
| JP5006989B2 (ja) | 2012-08-22 |
| EP2288912A1 (fr) | 2011-03-02 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210817 Address after: Tampere Patentee after: Baioman Western Europe Co.,Ltd. Address before: Munich, Germany Patentee before: SIEMENS AG |
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| TR01 | Transfer of patent right |