CN102064020B - Making method of microwave high-frequency capacitor terminal electrode - Google Patents
Making method of microwave high-frequency capacitor terminal electrode Download PDFInfo
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- CN102064020B CN102064020B CN2010105255598A CN201010525559A CN102064020B CN 102064020 B CN102064020 B CN 102064020B CN 2010105255598 A CN2010105255598 A CN 2010105255598A CN 201010525559 A CN201010525559 A CN 201010525559A CN 102064020 B CN102064020 B CN 102064020B
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Abstract
The invention relates to the field of capacitors and provides a making method of a microwave high-frequency capacitor terminal electrode. The method comprises making of the terminal electrode and the surface processing technology of the terminal electrode, wherein the surface processing technology comprises the steps of surface degreasing processing, a surface oxidation layer removal processing, surface glass layer removal processing and oxidation resistance layer processing. In the invention, by using Cu to make the terminal electrode of a microwave high-frequency capacitor and carrying out surface processing on the terminal electrode, the microwave high-frequency capacitor with excellent performance can be obtained; and the welding performance of the terminal electrode is good, and therefore, ESR (Equivalent Series Resistance) cannot have the phenomena of overlarge and overlow Q value.
Description
Technical field
The present invention relates to capacitor area, especially relate to the manufacture method of microwave high-frequency capacitor termination electrode.
Background technology
In microwave high-frequency chip multilayer ceramic capacitor (MLCC) field; What traditional M LCC adopted is the technology of three layers of termination; Be that process with the Ag-Ni-Sn three-layer metal termination; This MLCC has good technology characteristics, but because the effect of magnetic influence element high frequency characteristics of Ni restricts its application on the higher frequency circuit.In view of the above, available technology adopting fine silver or silver palladium alloy are made the termination, though the fine silver termination has overcome the influence of Ni layer magnetic, because the Ag fusing point is low, the termination is prone to melted erosion in welding, lose to be electrically connected; And the termination that silver palladium alloy is made also can overcome the influence of Ni layer magnetic, but the termination fusing point is higher, and the soldering effect is relatively poor, and palladium metal costs an arm and a leg, and the cost of manufacture of termination is higher.
Summary of the invention
The technical problem that the present invention will solve is to overcome the deficiency of above-mentioned prior art; And a kind of manufacture method of ceramic capacitor termination electrode is proposed; It is excessive that the ceramic capacitor that this method is made effectively solves among the microwave high-frequency circuit MLCC ESR; The problem that the Q value is low excessively guarantees good welding performance and cheap cost of manufacture.
The technical scheme that the present invention solves the problems of the technologies described above employing comprises: the manufacture method that a kind of microwave high-frequency capacitor termination electrode is provided; Described capacitor comprises two-layer above dielectric; Be printed with interior electrode between this two layer medium body; The two ends of electrode are provided with and are attached thereto the termination electrode that connects in being somebody's turn to do, and wherein: the manufacture method of termination electrode may further comprise the steps:
(1) chip of described capacitor obtains the Cu termination electrode through the dip-coating of Cu slurry, then at N
2With weak O
2Burn end under the protection;
The capacitor that (2) will burn after holding carries out oil removing and processing of rust removing, earlier with NaHCO
3The aqueous solution is aided with ultrasonic liquid and carries out oil removing, and then with rare H
2SO
4The aqueous solution eliminates rust;
(3) again termination electrode is carried out the processing of removing oxide layer and glassy layer, remove cross cut end (of a beam) glass cover layer and oxide layer with the mix grinding mode with pyrovinic acid and aqueous citric acid solution;
(4) carry out anti-oxidation processing at last, clean and be soaked in petroleum base sodium sulfonate liquid earlier and do the antioxidation coating processing.
The further preferred scheme of the present invention is: in the described burning end technology, its sintering temperature is 750-880 ℃, and sintering time is: 5～15min.
The further preferred scheme of the present invention is: described nitrogen and weak oxygen proportion are: oxygen content is less than 100ppm in the nitrogen.
The further preferred scheme of the present invention is: in above-mentioned (3) step, the processing time of removing oxide layer and glassy layer is 30～60min.
The further preferred scheme of the present invention is: ultrasonic liquid is absolute ethyl alcohol or 95% ethanol in above-mentioned (2) step.
Compare with prior art; Through being made as the termination electrode of microwave high-frequency capacitor with Cu, and, can obtain the microwave high-frequency capacitor of function admirable through the present invention through termination electrode is carried out surface treatment; And the good welding performance of termination electrode, phenomenon excessive and that the Q value is too low can not appear in ESR.
Embodiment
Below in conjunction with most preferred embodiment the present invention is made further detailed description.
The embodiment of the invention provides a kind of termination electrode manufacture method of microwave high-frequency capacitor; The making flow process of described microwave high-frequency capacitor is as shown in Figure 1, adopts the porcelain dielectric material with certain resistance to reduction ability, presses the Electrical Appliances Designing of microwave sheet type multi-layer ceramic; Prepare chip; Wherein, porcelain dielectric material system can be Ba-Ti-O or Ca-Zr-O, and inner electrode can be Pd, Pd/Ag or Cu; 950～1300 ℃ of the sintering temperatures of chip are confirmed firing temperature according to employing porcelain amboceptor system and coupling inner electrode.
The described microwave high-frequency capacitor chip of embodiment of the invention two ends dip-coating Cu oar, after 120～150 ℃ of oven dry, at 750～880 ℃, preferred 800 ℃ N
2With weak O
2Sinter electrode under the atmosphere protection, promptly oxygen content is less than 100ppm in the nitrogen, and this moment, chip had normal electrical performance and certain welding performance.But, must carry out surface treatment to the Cu termination electrode with surface conditioning agent in order to guarantee that the Cu electrode has good welding performance.Its technological process is as shown in Figure 2, and the described termination electrode process of surface treatment of the embodiment of the invention is: the capacitor that at first will burn after holding carries out oil removing and processing of rust removing, with NaHCO
3The aqueous solution is aided with ultrasonic liquid and carries out oil removing, ultrasonic liquid the best be absolute ethyl alcohol or 95% ethanol all can, and then with rare H
2SO
4The aqueous solution eliminates rust; Termination electrode is carried out the processing of removing oxide layer and glassy layer again, remove cross cut end (of a beam) glass cover layer and oxide layer with pyrovinic acid and aqueous citric acid solution with the mix grinding mode, its processing time is 30～60min; Carry out anti-oxidation processing at last, clean and be soaked in petroleum base sodium sulfonate liquid earlier and do the antioxidation coating processing.
Microwave high-frequency capacitor through the embodiment of the invention is made can effectively improve high-frequency characteristic, reduces cost of manufacture.This manufacture method also is applicable to the making of other associated electrical components and parts, like annular voltage-sensitive resistor, and microwave resistor etc.
The present invention's enforcement is not limited to the disclosed mode of above most preferred embodiment, and is all based on above-mentioned mentality of designing, simply deduces and replace, and all belongs to enforcement of the present invention.
Claims (3)
1. the manufacture method of a microwave high-frequency capacitor termination electrode; Described capacitor comprises two-layer above dielectric; Be printed with interior electrode between this two-layer above dielectric, two ends of electrode are provided with and are attached thereto the termination electrode that connects in this, it is characterized in that: may further comprise the steps:
(1) chip of described capacitor obtains the Cu termination electrode through the dip-coating of Cu slurry, then at N
2With weak O
2Burn end under the protection, this nitrogen and weak oxygen proportion are: oxygen content is less than 100ppm in the nitrogen;
The capacitor that (2) will burn after holding carries out oil removing and processing of rust removing, earlier with NaHCO
3The aqueous solution is aided with ultrasonic liquid and carries out oil removing, and then with rare H
2SO
4The aqueous solution eliminates rust, and described ultrasonic liquid is absolute ethyl alcohol or 95% ethanol;
(3) again termination electrode is carried out the processing of removing oxide layer and glassy layer, remove cross cut end (of a beam) glass cover layer and oxide layer with the mix grinding mode with pyrovinic acid and aqueous citric acid solution;
(4) carry out anti-oxidation processing at last, clean and be soaked in petroleum base sodium sulfonate liquid earlier and do the antioxidation coating processing.
2. the manufacture method of microwave high-frequency capacitor termination electrode according to claim 1 is characterized in that: in the described burning end technology, its sintering temperature is 750-880 ℃, and sintering time is: 5～15min.
3. the manufacture method of microwave high-frequency capacitor termination electrode according to claim 1 is characterized in that: in above-mentioned (3) step, the processing time of removing oxide layer and glassy layer is 30～60min.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105255598A CN102064020B (en) | 2010-10-28 | 2010-10-28 | Making method of microwave high-frequency capacitor terminal electrode |
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| CN2010105255598A CN102064020B (en) | 2010-10-28 | 2010-10-28 | Making method of microwave high-frequency capacitor terminal electrode |
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| CN102064020A CN102064020A (en) | 2011-05-18 |
| CN102064020B true CN102064020B (en) | 2012-04-25 |
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Families Citing this family (5)
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| CN102320827B (en) * | 2011-07-27 | 2013-12-25 | 广州创天电子科技有限公司 | Crystal boundary layer material of single-layer capacitor, manufacture method of substrate and method for manufacturing single-layer capacitor |
| CN103553606B (en) * | 2013-10-17 | 2016-02-03 | 广州创天电子科技有限公司 | Microwave ceramic material, multilayer ceramic capacitor and prepare the method for this capacitor |
| CN108296139A (en) * | 2016-09-14 | 2018-07-20 | 南京工业职业技术学院 | A kind of FERRITE CORE surface epoxide powder coating coating processes |
| CN106733566A (en) * | 2016-12-15 | 2017-05-31 | 南京工业职业技术学院 | A kind of FERRITE CORE surface epoxide powder coating coating processes |
| CN109148152A (en) * | 2018-09-12 | 2019-01-04 | 中国振华（集团）新云电子元器件有限责任公司 | A kind of frequency microwave multilayer ceramic capacitor micro-strip mounting structure and installation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7074349B2 (en) * | 2003-01-24 | 2006-07-11 | E. I. Du Pont De Nemours And Company | Terminal electrode compositions for multilayer ceramic capacitors |
| CN101127275A (en) * | 2007-09-14 | 2008-02-20 | 广东风华高新科技股份有限公司 | A making method for high voltage sheet type multi-layer porcelain capacitor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS602681A (en) * | 1983-06-16 | 1985-01-08 | Murata Mfg Co Ltd | Rust preventive treatment of copper or copper alloy |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7074349B2 (en) * | 2003-01-24 | 2006-07-11 | E. I. Du Pont De Nemours And Company | Terminal electrode compositions for multilayer ceramic capacitors |
| CN101127275A (en) * | 2007-09-14 | 2008-02-20 | 广东风华高新科技股份有限公司 | A making method for high voltage sheet type multi-layer porcelain capacitor |
Non-Patent Citations (1)
| Title |
|---|
| JP昭60-2681A 1985.01.08 |
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Application publication date: 20110518 Assignee: GUANGZHOU CHUANGTIAN ELECTRONIC TECHNOLOGY Co.,Ltd. Assignor: Wu Hao Contract record no.: 2012440000420 Denomination of invention: Making method of microwave high-frequency capacitor terminal electrode Granted publication date: 20120425 License type: Exclusive License Record date: 20120727 |
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Effective date of registration: 20210519 Address after: 510000 one of No.8 Lai'an 1st Street, Huangpu District, Guangzhou City, Guangdong Province Patentee after: GUANGZHOU CHUANGTIAN ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 518020 block B, 4th floor, Tongxing industrial building, No.3 and 5 Chuangye Road, Guangzhou Economic and Technological Development Zone, Guangdong Province Patentee before: Wu Hao |