CN102055491B - RF front-end module and there is the mobile communications device of this module - Google Patents
RF front-end module and there is the mobile communications device of this module Download PDFInfo
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Abstract
The present invention relates to a kind of RF front-end module and there is the mobile communications device of this module.This RF front-end module comprises: power amplifier, and it comprises high-frequency power amplifying circuit and LF power amplifier; High frequency band output impedance matching networks, it is connected with high-frequency power amplifying circuit, to form high frequency channel; Low-frequency band output impedance matching networks, it is connected with LF power amplifier, to form low frequency channel; Radio-frequency antenna switch, it for switching between high frequency channel and low frequency channel; And CMOS controller, for the switching of the mode of operation and radio-frequency antenna switch that control power amplifier.Two power amplifiers are integrated in a RF front-end module by this design, thus greatly reduce the cost of element, improve level of integrated system, and reduce the design difficulty of radio frequency printed circuit plate.
Description
Technical field
The present invention relates to RF front-end module, more specifically relate to a kind of RF front-end module for mobile communication.
Background technology
In modern wireless communication systems, radio-frequency front-end is the critical component realizing radiofrequency signal wireless transmission.Now, telecom operators are proposed much different wireless communication systems, and the frequency of different wireless communication system transmission is different with the pattern requirements of work.Therefore, support that multiple-working mode and multiple operating frequency become the important directions of radio-frequency front-end development simultaneously.GSM (GlobalSystemforMobileCommunication) is used widely in the world as Generation Mobile Telecommunication System standard; And TD-SCDMA (TimeDivision-SynchronousCodeDivisionMultipleAccess) as one of three kinds of international Third Generation Mobile Communication Technical Standands by spread.Therefore, it is possible to support that the radio-frequency front-end of GSM and TD-SCDMA two kinds of patterns will have very large application potential simultaneously.
Existing TD-SCDMA/GSM mobile phone terminal technical solution is (see " Global Electronics Components ", the second phase in 2007) as shown in Figure 1.In this technical scheme, mobile phone terminal comprises radio-frequency antenna, radio-frequency power amplifier, antenna switch module, RF surface acoustic wave fliter (SAW), dual-mode radio frequency transponder chip, baseband chip, XTAL crystal and a small amount of resolution element.In the receiving mode, the radiofrequency signal received from antenna, through a SAW, then gives the low noise amplifier (LNA) of dual-mode radio frequency transponder chip inside by sheet external impedance matching network.Under TD-SCDMA emission mode, radiofrequency signal is sent to TD-SCDMA power amplifier from dual-mode radio frequency transponder chip inside, through antenna switch module, finally gone out by antenna transmission, this bias voltage (PABIAS) required for TD-SCDMA power amplifier is exported by dual-mode radio frequency transponder chip; Under GSM emission mode, send radiofrequency signal to GSM power amplifier from dual-mode radio frequency transponder chip inside, then go out through antenna transmission.
In this TD-SCDMA/GSM mobile phone terminal technical solution, although TD-SCDMA radio-frequency (RF) transceiver and GSM radio-frequency (RF) transceiver are integrated into TD-SCDMA/GSM dual-mode radio frequency transceiver, be provided with certain integrated level, but more crucial parts---radio-frequency power amplifier still adopts two different power amplifiers to process TD-SCDMA signal and GSM signal respectively, namely a linear power amplifier is adopted to launch TD-SCDMA signal, GSM signal launched by a nonlinear power amplifier, this not only considerably increases the cost of element, also improve the design difficulty of radio frequency printed circuit plate (PCB).
Summary of the invention
Therefore, the object of the invention is to realize a kind of RF front-end module that can overcome above-mentioned shortcoming, its by function i ntegration such as the power amplification of different mode signal and antenna receptions in same module; Specifically, two power amplifiers can be integrated in a RF front-end module, so not only greatly reduce the cost of element, improve level of integrated system, and reduce the design difficulty of radio frequency printed circuit plate (PCB).
According to an aspect of the present invention, provide a kind of RF front-end module, comprising: power amplifier, it comprises high-frequency power amplifying circuit and LF power amplifier; High frequency band output impedance matching networks, it is connected with high-frequency power amplifying circuit, to form high frequency channel; Low-frequency band output impedance matching networks, it is connected with LF power amplifier, to form low frequency channel; Radio-frequency antenna switch, it for switching between high frequency channel and low frequency channel; And CMOS controller, for the switching of the mode of operation and radio-frequency antenna switch that control power amplifier.
According to an aspect of the present invention, when RF front-end module receives the first signal, the mode of operation of power amplifier is switched to the first mode of operation by CMOS controller, and make radio-frequency antenna switch connect high frequency channel, in a first operation mode, high-frequency power amplifying circuit carries out power amplification to the first signal, and this outputs to radio-frequency antenna switch through high frequency band output impedance matching networks again through amplifying signal; When RF front-end module receives with the secondary signal of the first band transmissions, the mode of operation of power amplifier is switched to the second mode of operation by CMOS controller, and make radio-frequency antenna switch connect high frequency channel, in the second operation mode, high-frequency power amplifying circuit carries out power amplification to the secondary signal of the first band transmissions, and this outputs to radio-frequency antenna switch through high frequency band output impedance matching networks again through amplifying signal; When RF front-end module receives with the secondary signal of the second band transmissions, the mode of operation of power amplifier is switched to the 3rd mode of operation by CMOS controller, and make radio-frequency antenna switch connect low frequency channel, in the third mode of operation, LF power amplifier carries out power amplification to the secondary signal of the second band transmissions, and this outputs to radio-frequency antenna switch through low-frequency band output impedance matching networks again through amplifying signal.
According to an aspect of the present invention, high-frequency power amplifying circuit is multistage amplifier circuit, and is provided with broadband inter-stage matching network between adjacent amplifying stage.
According to an aspect of the present invention, broadband inter-stage matching network is made up of the cascade of two-stage or more level matching network, and every one-level of described two-stage or more level matching network is one in L-type matching network, T-shaped matching network and Pi type matching network.
According to an aspect of the present invention, high frequency output impedance matching network is made up of the cascade of two-stage or more level matching network, and every one-level of described two-stage or more level matching network is one in L-type matching network, T-shaped matching network and Pi type matching network.
According to an aspect of the present invention, low-frequency band output impedance matching networks is the low-frequency band output impedance matching networks with harmonic inhibition capability, and this network comprises: for suppressing the first inductance and first electric capacity of the second harmonic; For suppressing the second inductance and second electric capacity of three order harmonicses; For suppressing the 3rd inductance and the 3rd electric capacity of four order harmonicses; And for suppressing the 4th electric capacity of the harmonic wave of more high-order.
According to an aspect of the present invention, radio-frequency antenna switch is that radio-frequency (RF) switch thrown by hilted broadsword more, this switch is except switching from except the transmitting of described high frequency channel and described low frequency channel, can also switch and receive from the arbitrary road in the multipath reception signal of antenna, and described Received signal strength comprises one or more in GSM850 signal, EGSM signal, DCS signal, PCS signal, TD_1900 signal, TD_2000 signal.
According to an aspect of the present invention, the first signal is TD-SCDMA signal, and secondary signal is GSM signal, and the first frequency range is the high band of GSM signal, and the second frequency range is the low-frequency range of GSM signal.
According to an aspect of the present invention, RF front-end module comprises input gating switch further, its according to the control of CMOS controller by the first signal and the high-frequency power amplifying circuit being input to RF front-end module with in these two signals of the secondary signal of the first band transmissions.
According to another aspect of the present invention, provide a kind of mobile communications device, this mobile communications device comprises: baseband module; Radio-frequency (RF) transceiver; According to the RF front-end module of aforementioned aspect; And antenna, wherein, when mobile communications device transmits, baseband module synthesis is loaded with the baseband signal sending out carry information, and this baseband signal is sent to radio-frequency (RF) transceiver, this radio-frequency (RF) transceiver processes and radio frequency signal generation the baseband signal come from baseband module transmission, and generated radiofrequency signal is sent to RF front-end module, RF front-end module carries out power amplification to the radiofrequency signal come from radio-frequency (RF) transceiver transmission, and passes through this radiofrequency signal through power amplification of external emission of sky alignment mobile communications device.
According to an aspect of the present invention, when mobile communications device Received signal strength, the radiofrequency signal from this mobile communications device outside received by antenna is transferred to radio-frequency (RF) transceiver through RF front-end module, this radio-frequency (RF) transceiver processes the signal received by radio-frequency antenna switch that the transmission from RF front-end module comes and generates baseband signal, and generated baseband signal is sent to baseband module, this baseband module is decoded to the baseband signal come from radio-frequency (RF) transceiver transmission.
According to an aspect of the present invention, input gating switch is provided with, for by the first signal with the high-frequency power amplifying circuit of a selected input in these two signals of the secondary signal of the first band transmissions to RF front-end module between the output of radio-frequency (RF) transceiver and the input of the high-frequency amplifier circuit of RF front-end module.
Accompanying drawing explanation
By reference to the accompanying drawings, by detailed description of the present invention below, aforementioned and other objects, feature, aspect and advantage of the present invention will be embodied more significantly, wherein:
Fig. 1 shows the block diagram of the TD-SCDMA/GSM mobile phone terminal according to prior art;
Fig. 2 shows the block diagram of the mobile communications device according to the embodiment of the present invention;
Fig. 3 shows the block diagram of the RF front-end module according to the embodiment of the present invention;
Fig. 4 shows the high-frequency power amplifying circuit according to the embodiment of the present invention;
Fig. 5 shows the broadband intervalve matching circuit according to the embodiment of the present invention;
Fig. 6 shows the high frequency band output impedance matching networks according to the embodiment of the present invention;
Fig. 7 shows the low-frequency band output impedance matching networks according to the embodiment of the present invention;
Fig. 8 shows low-frequency band output impedance matching networks according to another embodiment of the present invention.
Embodiment
Fig. 2 shows the block diagram of the mobile communications device according to the embodiment of the present invention.As shown in Figure 2, this mobile communications device comprises: baseband module, for the synthesis of the baseband signal that will launch, or decodes to the baseband signal received; Radio-frequency (RF) transceiver, the baseband signal come from baseband module transmission is processed and radio frequency signal generation, and generated radiofrequency signal is sent to RF front-end module, or the radiofrequency signal come from RF front-end module transmission is processed and generates baseband signal, and generated baseband signal is sent to baseband module; RF front-end module, for carrying out the process of such as power amplification to the radiofrequency signal come from radio-frequency (RF) transceiver transmission, or Received signal strength be sent to radio-frequency (RF) transceiver by after this Received signal strength process; And antenna, it is connected with RF front-end module, for the signal come from RF front-end module transmission from extraneous Received signal strength or transmitting.
Specifically, when carrying out signal transmitting, baseband module becomes base band code (baseband signal) the encode information that will launch and is transferred to radio-frequency (RF) transceiver, radio-frequency (RF) transceiver carries out process radio frequency signal generation to this baseband signal, and by this radio signal transmission to RF front-end module, the radiofrequency signal come from radio-frequency (RF) transceiver transmission is carried out power amplification and is outwards launched by antenna by RF front-end module; When carrying out Signal reception, RF front-end module by the radio signal transmission that received by antenna to radio-frequency (RF) transceiver, the radiofrequency signal come from RF front-end module transmission is converted to baseband signal by radio-frequency (RF) transceiver, and by this base band signal transmission to baseband module, be finally interpreted as reception information by baseband module by transmitting from radio-frequency (RF) transceiver the baseband signal come.
Alternatively, the described information that will launch or reception information can comprise audio-frequency information, address information (phone number, station address), Word message (short message word, website word), pictorial information etc.
The primary clustering of described baseband module is processor (DSP, ARM etc.) and internal memory (as SRAM, Flash).Alternatively, this baseband module is realized by single baseband chip.
Preferably, described radio-frequency (RF) transceiver supports two kinds of baseband signal interfaces, can the baseband module (chip) of tenaculum Analog Baseband function, also can support the baseband module (chip) of pure digi-tal simultaneously.
In the embodiment shown in Figure 2, radio-frequency (RF) transceiver is dual-mode radio frequency transceiver, is specifically TD-SCDMA/GSM dual-mode radio frequency transceiver.But be not limited to TD-SCDMA and GSM two class wireless communications mode according to the application of dual-mode radio frequency transceiver of the present invention, but be applicable to the different communication pattern of any two kinds of operating frequencies, as CDMA2000, WCDMA etc.In addition, alternatively, described dual-mode radio frequency transceiver module is realized by single radio-frequency (RF) transceiver chip.
Because the operating frequency of two kinds of wireless communications modes is different, such as, the operating frequency of TD-SCDMA is higher, and the operating frequency of GSM comprises high and low two frequency ranges, and wherein the frequency range of GSM high frequency band signal and TD-SCDMA signal relatively.So, as shown in Figure 2, the radiofrequency signal that TD-SCDMA/GSM dual-mode radio frequency transceiver provides for RF front-end module comprises: GSM low-band signal (GSM_LBand), GSM high frequency band signal (GSM_HBand) and TD-SCDMA signal (TD-SCDMA).
The RF front-end module according to the embodiment of the present invention is described in detail below in conjunction with Fig. 3.Herein, for matching with aforementioned TD-SCDMA/GSM dual-mode radio frequency transceiver, RF front-end module is TD-SCDMA/GSM dual-mode radio frequency front-end module.But in like manner, this RF front-end module also goes for other communication pattern, as CDMA2000, WCDMA etc.
As shown in Figure 3, TD-SCDMA/GSM dual-mode radio frequency front-end module comprises: power amplifier, CMOS controller, high frequency band output matching network, low-frequency band output matching network and radio-frequency antenna switch.
As previously mentioned, the radiofrequency signal that TD-SCDMA/GSM dual-mode radio frequency transceiver provides for TD-SCDMA/GSM dual-mode radio frequency front-end module comprises: GSM low-band signal (GSM_LBand), GSM high frequency band signal (GSM_HBand) and TD-SCDMA signal (TD-SCDMA).
When TD-SCDMA/GSM dual-mode radio frequency transceiver provides GSM_LBand radiofrequency signal, signal is amplified by the LF power amplifier in power amplifier.Now, mode of operation is switched to GSM low frequency operating mode by CMOS controller, and radio-frequency antenna switch is switched to the operating state of low frequencies conducting, high frequency shutoff, signal is by the LF power amplifier of power amplifier, be transferred to low-frequency band output impedance matching networks (the low-frequency band output matching network namely in Fig. 3), again by radio-frequency antenna switch, finally by antenna transmission, thus the power amplification completed GSM_LBand radiofrequency signal and transmitting.
When TD-SCDMA/GSM dual-mode radio frequency transceiver provides GSM_HBand radiofrequency signal, signal is amplified by the high-frequency power amplifying circuit in power amplifier, now, mode of operation is switched to GSM high-frequency work pattern by CMOS controller, and radio-frequency antenna switch is switched to high-frequency emission conducting, the operating state that low frequency turns off, signal is by the high-frequency power amplifying circuit of power amplifier, be transferred to high frequency band output impedance matching networks (the high frequency band output impedance matching networks namely in Fig. 3), pass through radio-frequency antenna switch again, final by antenna transmission, thus the power amplification completed GSM_HBand radiofrequency signal and transmitting.
When TD-SCDMA/GSM dual-mode radio frequency transceiver provides TD-SCDMA radiofrequency signal, signal is amplified by the high-frequency power amplifying circuit in power amplifier, now, mode of operation is switched to TD mode of operation by CMOS controller, and radio-frequency antenna switch is switched to the operating state of high-frequency emission conducting, low frequency shutoff, signal is by the high-frequency power amplifying circuit of power amplifier, be transferred to high frequency band output impedance matching networks, pass through radio-frequency antenna switch again, final by antenna transmission, thus the power amplification completed TD-SCDMA radiofrequency signal and transmitting.
Due to the frequency of TD radiofrequency signal (TD-SCDMA) and GSM high frequency radio signals (GSM_HBand) frequency relatively, therefore the high-frequency power amplifying circuit in power amplifier can be designed to the power amplification circuit in broadband, make these two kinds of signals can multiplexing same power amplification circuit, Fig. 4 shows the high-frequency power amplifying circuit according to the embodiment of the present invention.TD-SCDMA radiofrequency signal and GSM_HBand radiofrequency signal share input port and the output port of high-frequency power amplifying circuit, and the supply voltage VCC of amplifying circuit and the voltage of biasing networks are provided by CMOS controller.Because power amplification circuit is different with mode of operation during GSM_HBand signal at amplification TD-SCDMA signal, CMOS controller needs the switching of the pattern of finishing the work to provide different bias voltages, so just these two radiofrequency signals can be amplified by same high-frequency power amplifying circuit, thus simplify circuit structure.In addition, alternatively, by described high-frequency power amplifying circuit and described LF power amplifier on a single die integrated, namely power amplifier is single-chip devices.
In said structure, due to the same power amplification circuit in GSM high frequency band signal (GSM_HBand) and TD-SCDMA signal (TD-SCDMA) duplex radio frequency front-end module, a radio frequency can be added between TD-SCDMA/GSM dual-mode radio frequency transceiver and TD-SCDMA/GSM dual-mode radio frequency front-end module and input gating switch, as shown in Figures 2 and 3.Control by the System on Chip/SoC (not shown) of baseband chip or mobile communications device the operating state that this radio frequency inputs gating switch, thus select the high-frequency power amplifying circuit in radiofrequency signal TD-SCDMA or GSM_HBand input radio frequency front-end module.Alternatively, also this radio frequency input gating switch can be integrated in RF front-end module, and control its on off state by CMOS controller, thus to high-frequency power amplifying circuit selected input signal TD-SCDMA or GSM_HBand.
In order to make TD-SCDMA and GSM_HBand radiofrequency signal can multiplexing same power amplifier, high-frequency power amplifying circuit in power amplifier can be designed to multistage amplifier circuit, as the three-stage amplifier in Fig. 4, this just needs design broadband inter-stage matching network.
Fig. 5 shows the broadband intervalve matching circuit according to the embodiment of the present invention.Common arrowband matching network, can by single-stage L-type or T-shaped or Pi type matching network realization, broadband matching network then needs to adopt multi-level form usually, and matching network is as shown in Figure 5 the two-stage broadband matching network realized by a T-shaped matching network (L1, C1, C2) and Pi type matching network (L2, C3, a C4) cascade.Multistage matching network can realize Broadband Matching, makes TD-SCDMA and GSM_HBand radiofrequency signal can multiplexing same power amplification circuit.
Alternatively, the way of realization of broadband inter-stage matching network is not limited to above-mentioned form, and it can be the combination in any of L-type, T-shaped, Pi type three kinds of basic networks, comprises combination mutually and the combination (such as two T-shaped cascades) of self; Further, the progression of cascade is also not limited to two-stage, can be three or more level.In addition, the concrete condition that the value of the passive device in multistage matching network designs according to power amplification circuit is determined.
Adopt high-frequency power amplifying circuit to amplify TD radiofrequency signal and GSM high frequency radio signals, need the design considering high frequency output impedance matching network.As shown in Figure 6, adopt wideband impedance match network, complete the impedance matching work to TD-SCDMA and GSM_HBand radiofrequency signal.The realization of wideband impedance match network, can adopt multistage L-type as above or form that the is T-shaped or cascade of Pi type matching network.
GSM low frequency radio frequency signal (GSM_LBand), after the LF power amplifier of power amplifier carries out power amplification, outputs to low-frequency band output impedance matching networks.Alternatively, adopt low-frequency band output impedance matching networks as shown in Figure 7, it is made up of two-stage L-type matching network.Consider that the harmonic frequency of GSM_LBand may drop on the frequency range of GSM_HBand and TD-SCDMA signal, thus affect the service behaviour of TD-SCDMA/GSM dual-mode radio frequency front-end module in GSM_HBand and TD-SCDMA frequency range, preferably, the low-frequency band output impedance matching networks with harmonic inhibition capability shown in Fig. 8 is adopted.In figure, inductance L 1, electric capacity C1 are for suppressing the second harmonic; Inductance L 2, electric capacity C2 are for suppressing three order harmonicses; Inductance L 3, electric capacity C3 are for suppressing four order harmonicses; Electric capacity C4 is for suppressing the harmonic wave of more high-order.While realizing impedance matching, the harmonic components of GSM_LBand signal can be suppressed to below-30dBm by low-frequency band output impedance matching networks as shown in Figure 8.With the concrete form of the low-frequency band output impedance matching networks of harmonic inhibition capability, and the value of passive device is wherein determined according to the concrete condition of Designing power amplifier.
For the harmonics restraint of TD-SCDMA signal and GSM_HBand signal, also can be processed by above-mentioned similar approach, or process outside RF front-end module.
Preferably, single pole multiple throw according to the radio-frequency antenna switch in the RF front-end module of the embodiment of the present invention, this switch, except may be used for switching each road of transmitting in the transmission mode and transmitting, can also be used for switching each road Received signal strength received from antenna in the receiving mode.In the embodiment shown in Fig. 2, Fig. 3, radio-frequency antenna switch is that radio-frequency (RF) switch thrown by a hilted broadsword eight, except may be used for switching transmitting TD-SCDMA/GSM_HBand, GSM_LBand two-way in the transmission mode and transmitting, can also be used for switching the six road Received signal strength received from antenna in the receiving mode: GSM850, EGSM, DCS, PCS, TD_1900, TD_2000.The switching of radio-frequency antenna switch, is controlled by the CMOS controller in TD-SCDMA/GSM dual-mode radio frequency front-end module.Like this, can in RF front-end module integrated signal receiving function, thus improve the integrated level of mobile communications device, reduce the cost of element, and reduce the design difficulty of printed circuit board (PCB).
Can be that mobile phone, PDA, portable computer etc. are any according to mobile communications device of the present invention using and the mobile communications device that will use.
Although to invention has been detailed description and explanation, can be expressly understood the use that they only explain and illustrate and be not construed as limiting, the spirit and scope of the present invention are only by the definition of term in claims.
Claims (20)
1. a RF front-end module, is characterized in that, comprising:
Power amplifier, it comprises high-frequency power amplifying circuit and LF power amplifier, and described power amplifier is single-chip devices;
High frequency band output impedance matching networks, it is connected with described high-frequency power amplifying circuit, to form high frequency channel;
Low-frequency band output impedance matching networks, it is connected with described LF power amplifier, to form low frequency channel;
Radio-frequency antenna switch, it for switching between described high frequency channel and described low frequency channel; And
CMOS controller, for the switching of the mode of operation and described radio-frequency antenna switch that control described power amplifier;
Wherein, when described RF front-end module receives the first signal, the mode of operation of described power amplifier is switched to the first mode of operation by described CMOS controller, and make described radio-frequency antenna switch connect described high frequency channel, in this first operative mode, described high-frequency power amplifying circuit carries out power amplification to described first signal, and this outputs to described radio-frequency antenna switch through described high frequency band output impedance matching networks again through amplifying signal; When described RF front-end module receives with the secondary signal of the first band transmissions, the mode of operation of described power amplifier is switched to the second mode of operation by described CMOS controller, and make described radio-frequency antenna switch connect described high frequency channel, under described second mode of operation, described high-frequency power amplifying circuit carries out power amplification to described with the secondary signal of the first band transmissions, and this outputs to described radio-frequency antenna switch through described high frequency band output impedance matching networks again through amplifying signal; When described RF front-end module receives with the described secondary signal of the second band transmissions, the mode of operation of described power amplifier is switched to the 3rd mode of operation by described CMOS controller, and make described radio-frequency antenna switch connect described low frequency channel, under described 3rd mode of operation, described LF power amplifier carries out power amplification to the described described secondary signal with the second band transmissions, and this outputs to described radio-frequency antenna switch through described low-frequency band output impedance matching networks again through amplifying signal.
2. RF front-end module according to claim 1, is characterized in that, described high-frequency power amplifying circuit is multistage amplifier circuit, and is provided with broadband inter-stage matching network between adjacent amplifying stage.
3. RF front-end module according to claim 2, it is characterized in that, described broadband inter-stage matching network is made up of the cascade of two-stage or more level matching network, and every one-level of described two-stage or more level matching network is one in L-type matching network, T-shaped matching network and Pi type matching network.
4. RF front-end module according to claim 1, it is characterized in that, described high frequency output impedance matching network is made up of the cascade of two-stage or more level matching network, and every one-level of described two-stage or more level matching network is one in L-type matching network, T-shaped matching network and Pi type matching network.
5. RF front-end module according to claim 1, it is characterized in that, described low-frequency band output impedance matching networks is the low-frequency band output impedance matching networks with harmonic inhibition capability, and this network comprises: for suppressing the first inductance (L1) and first electric capacity (C1) of the second harmonic; For suppressing the second inductance (L2) and second electric capacity (C2) of three order harmonicses; For suppressing the 3rd inductance (L3) and the 3rd electric capacity (C3) of four order harmonicses; And for suppressing the 4th electric capacity (C4) of the harmonic wave of more high-order.
6. RF front-end module according to claim 1, it is characterized in that, described radio-frequency antenna switch is that radio-frequency (RF) switch thrown by hilted broadsword more, this switch is except switching from except the transmitting of described high frequency channel and described low frequency channel, can also switch and receive from the arbitrary road in the multipath reception signal of antenna, and described Received signal strength comprises one or more in GSM850 signal, EGSM signal, DCS signal, PCS signal, TD_1900 signal, TD_2000 signal.
7. RF front-end module according to claim 1, is characterized in that, described first signal is TD-SCDMA signal, and described secondary signal is GSM signal, and described first frequency range is the high band of GSM signal, and described second frequency range is the low-frequency range of GSM signal.
8. RF front-end module according to claim 1, it is characterized in that, described RF front-end module comprises input gating switch further, this gating switch according to the control of CMOS controller by described first signal and described with the high-frequency power amplifying circuit of a selected input in these two signals of the secondary signal of the first band transmissions to described RF front-end module.
9. a mobile communications device, is characterized in that, this mobile communications device comprises:
Baseband module;
Radio-frequency (RF) transceiver;
RF front-end module according to claim 1;
And antenna,
Wherein, when described mobile communications device transmits, described baseband module synthesis is loaded with the baseband signal sending out carry information, and this baseband signal is sent to described radio-frequency (RF) transceiver, this radio-frequency (RF) transceiver processes and radio frequency signal generation the baseband signal come from described baseband module transmission, and generated radiofrequency signal is sent to described RF front-end module, described RF front-end module carries out power amplification to the radiofrequency signal come from described radio-frequency (RF) transceiver transmission, and by this radiofrequency signal through power amplification of external emission of mobile communications device described in described sky alignment.
10. mobile communications device according to claim 9, it is characterized in that, when described mobile communications device Received signal strength, the radiofrequency signal from this mobile communications device outside received by described antenna is transferred to described radio-frequency (RF) transceiver through the radio-frequency antenna switch of described RF front-end module, this radio-frequency (RF) transceiver processes the signal that described transmission comes and generates baseband signal, and generated baseband signal is sent to described baseband module, this baseband module is decoded to the baseband signal come from described radio-frequency (RF) transceiver transmission.
11. mobile communications devices according to claim 9, it is characterized in that, comprise the first signal, with the secondary signal of the first band transmissions or with the secondary signal of the second band transmissions by described radio-frequency (RF) transceiver to the described radiofrequency signal that described RF front-end module sends.
12. mobile communications devices according to claim 11, it is characterized in that, when described RF front-end module receives described first signal, the mode of operation of described power amplifier is switched to the first mode of operation by described CMOS controller, and make described radio-frequency antenna switch connect described high frequency channel, in this first operative mode, described high-frequency power amplifying circuit carries out power amplification to described first signal, and this outputs to described radio-frequency antenna switch through described high frequency band output impedance matching networks again through amplifying signal; When described RF front-end module receive described with the secondary signal of the first band transmissions time, the mode of operation of described power amplifier is switched to the second mode of operation by described CMOS controller, and make described radio-frequency antenna switch connect described high frequency channel, under described second mode of operation, described high-frequency power amplifying circuit carries out power amplification to described with the secondary signal of the first band transmissions, and this outputs to described radio-frequency antenna switch through described high frequency band output impedance matching networks again through amplifying signal; When described RF front-end module receive described with the described secondary signal of the second band transmissions time, the mode of operation of described power amplifier is switched to the 3rd mode of operation by described CMOS controller, and make described radio-frequency antenna switch connect described low frequency channel, under described 3rd mode of operation, described LF power amplifier carries out power amplification to the described described secondary signal with the second band transmissions, and this outputs to described radio-frequency antenna switch through described low-frequency band output impedance matching networks again through amplifying signal.
13. mobile communications devices according to claim 9, is characterized in that, described high-frequency power amplifying circuit is multistage amplifier circuit, and be provided with broadband inter-stage matching network between adjacent amplifying stages.
14. mobile communications devices according to claim 13, it is characterized in that, described broadband inter-stage matching network is made up of the cascade of two-stage or more level matching network, and every one-level of described two-stage or more level matching network is one in L-type matching network, T-shaped matching network and Pi type matching network.
15. mobile communications devices according to claim 9, it is characterized in that, described high frequency output impedance matching network is made up of the cascade of two-stage or more level matching network, and every one-level of described two-stage or more level matching network is one in L-type matching network, T-shaped matching network and Pi type matching network.
16. mobile communications devices according to claim 9, it is characterized in that, described low-frequency band output impedance matching networks is the low-frequency band output impedance matching networks with harmonic inhibition capability, and this network comprises: for suppressing the first inductance (L1) and first electric capacity (C1) of the second harmonic; For suppressing the second inductance (L2) and second electric capacity (C2) of three order harmonicses; For suppressing the 3rd inductance (L3) and the 3rd electric capacity (C3) of four order harmonicses; And for suppressing the 4th electric capacity (C4) of the harmonic wave of more high-order.
17. mobile communications devices according to claim 10, it is characterized in that, described radio-frequency antenna switch is that radio-frequency (RF) switch thrown by hilted broadsword more, this switch is except switching from except the transmitting of described high frequency channel and described low frequency channel, described radiofrequency signal from described antenna can also be switched to corresponding path to be transferred to described radio-frequency (RF) transceiver, wherein comprise one or more in GSM850 signal, EGSM signal, DCS signal, PCS signal, TD_1900 signal, TD_2000 signal from the described radiofrequency signal of described antenna.
18. mobile communications devices according to claim 11, is characterized in that, described first signal is TD-SCDMA signal, and described secondary signal is GSM signal, and described first frequency range is the high band of GSM signal, and described second frequency range is the low-frequency range of GSM signal.
19. mobile communications devices according to claim 11, it is characterized in that, described RF front-end module comprises further: input gating switch, its according to the control of CMOS controller by described first signal and the described high-frequency power amplifying circuit being input to described RF front-end module with in these two signals of the secondary signal of the first band transmissions.
20. mobile communications devices according to claim 11, it is characterized in that, input gating switch is provided with, for by described first signal and described with the high-frequency power amplifying circuit of a selected input in these two signals of the secondary signal of the first band transmissions to described RF front-end module between the output of described radio-frequency (RF) transceiver and the input of the described high-frequency amplifier circuit of described RF front-end module.
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