CN103249135B - Radio communication device - Google Patents
Radio communication device Download PDFInfo
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- CN103249135B CN103249135B CN201210032771.XA CN201210032771A CN103249135B CN 103249135 B CN103249135 B CN 103249135B CN 201210032771 A CN201210032771 A CN 201210032771A CN 103249135 B CN103249135 B CN 103249135B
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Abstract
A kind of radio communication device, supports the radio activity of the first wireless access technology and the second wireless access technology, including：First wireless access technology fundamental module, produces the first fundamental frequency signal so that the first wireless access technology radio frequency unit is converted to the first radiofrequency signal；And the second wireless access technology fundamental module, the second fundamental frequency signal is produced so that the second wireless access technology radio frequency unit is converted to the second radiofrequency signal；Wherein, when the first wireless access technology fundamental module works, export the first control signal and give bias switch, enable the bias of bias switch output first and give the shared power amplifier of the second wireless access technology fundamental module, allow the power amplifier to determine to amplify the yield value of first radiofrequency signal according to first bias.The radio communication device that the present invention is provided, can be with cost-effective by single power amplifier is used.
Description
Technical field
Present invention is directed to radio communication device, and particularly with regard to support TD SDMA (Time
Division Synchronous Code Division Multiple Access, TD-SCDMA) and GGE (GSM/GPRS/
The circuit design of communicator EDGE).
Background technology
TD-SCDMA, TD SDMA is International Telecommunication Union (International
Telecommunication Union, ITU) one of the 3G mobile communication standards checked and approved, the technology such as its collection CDMA, TDMA, FDMA
In one, and using smart antenna, joint-detection, baton handover (relay handover), synchronization CDMA, software radio,
The technologies such as low bit piece rate, multi-slot, variable spread spectrum system, adaptive power adjustment, are with power system capacity is big, spectrum utilization
Rate is high, strong antijamming capability the advantages of mobile communication technology.
GGE for belong to together global system for mobile communications (Global System for Mobile Communications,
GSM) GSM, GPRS (General Packet Radio Service) of standard and GSM enhancing data transfer rate evolution technologies
The general designation of (Enhanced Data rates for GSM Evolution, EDGE), GSM is the most commonly used 2G of current application
Mobile communication standard, after GPRS is introduced, gsm system can provide data communication in package mode in hgher efficiency, and
Introduce after EDGE, gsm system has the data transfer of more speed, there is provided close to its communication ability of 3G.
Fig. 1 show the schematic diagram of the radio communication device 10 of double support TD-SCDMA and GGE in the prior art.In figure
In 1, baseband chip 100 may include multiple computer hardwares to implement fundamental frequency signal treatment, and fundamental frequency signal treatment may include simulation numeral
Conversion (Analog To Digital Conversion, ADC)/digital-to-analogue conversion (Digital To Analog
Conversion, DAC), Gain tuning, modulating/demodulating system, coding/decoding etc..Radio frequency chip 110 is received from baseband chip 100
Fundamental frequency signal, and the radiofrequency signal of TD-SCDMA signals 160 or EDGE signals 170 is converted to for transmitter by signal is received
111 launch after a while.TD-SCDMA signals 160 that the transmitter 111 of radio frequency chip 110 is launched and EDGE signals 170 respectively by
CDMA power amplifiers 120 are transmitted with EDGE power amplifiers 130.Switch 140 is coupled to shared antenna 150 and CDMA power
Between amplifier 120 and EDGE power amplifiers 130, it is used to CDMA power amplifiers 120 and EDGE power amplifiers
130 therein one are connected to antenna 150, wherein being used to the control signal 180 for controlling switch 140 to switch by baseband chip 100
Output.Therefore, just can be cost-effective with EDGE signals if TD-SCDMA signals can be transmitted by same power amplifier.
The content of the invention
In view of this, the present invention provides a kind of radio communication device.
One embodiment of the invention provides a kind of radio communication device, supports the first wireless access technology and second wireless
The radio activity of electrical access technology, including：First wireless access technology fundamental module, produces the first fundamental frequency signal for the
One wireless access technology radio frequency unit is converted to the first radiofrequency signal；And the second wireless access technology fundamental module, produce
Raw second fundamental frequency signal is converted to one second radiofrequency signal for the second wireless access technology radio frequency unit.When this is first wireless
When electrical access technology fundamental module works, the first control signal is exported to a bias switch, enable bias switch output
First bias gives the shared power amplifier of the second wireless access technology fundamental module, allows the power amplifier according to this
First bias determines to amplify the yield value of first radiofrequency signal.When the first wireless access technology fundamental module does not work
When, the default output one second of the bias switch is biased gives the power amplifier, allows the power amplifier according to second bias
Amplify the yield value of second radiofrequency signal.Amplify the yield value of second radiofrequency signal more than amplifying first radiofrequency signal
Yield value.First wireless access technology is TD-SCDMA technology, and second wireless access technology is EDGE technologies.It is above-mentioned
Power amplifier is EDGE power amplifiers, and determines its yield value for amplifying according to first bias or the second bias.On
State bias switching device to be coupled between the power amplifier and the first wireless access technology fundamental module, acquiescence output should
Second biases and gives the power amplifier, enables the gain that the power amplifier amplifies second radiofrequency signal according to second bias
Value, and when first control signal is received, exports this and first biases and give the power amplifier, enables the power amplifier
Amplify the yield value of first radiofrequency signal according to first bias.
Another embodiment of the present invention provides a kind of radio communication device, supports the first wireless access technology and the second nothing
The radio activity of line electrical access technology, including：First wireless access technology fundamental module, produce the first fundamental frequency signal for
First wireless access technology radio frequency unit is converted to the first radiofrequency signal；And the second wireless access technology fundamental module,
The second fundamental frequency signal is produced to be converted to the second radiofrequency signal for the second wireless access technology radio frequency unit.When this is second wireless
When electrical access technology fundamental module works, the bias of output one gives the shared power of the first wireless access technology fundamental module
Amplifier, allows the power amplifier to be determined to amplify the yield value of second radiofrequency signal according to the bias.When second radio
When access technique fundamental module does not work, the power amplifier also receives the signal for being same as the bias, allows the power amplification
Device amplifies the yield value of first radiofrequency signal according to the bias.Wherein first wireless access technology is time division synchronous code division
Multiple access TD-SCDMA technology, second wireless access technology is EDGE technologies.The power amplifier determines to put according to the bias
Big yield value.
The radio communication device that the present invention is provided, can be with cost-effective by single power amplifier is used.
Brief description of the drawings
Fig. 1 show the schematic diagram of the communicator for supporting TD-SCDMA and GGE in the prior art；
Fig. 2 show the signal of the radio communication device according to the support TD-SCDMA and GGE of first embodiment of the invention
Figure；
Fig. 3 show the signal of the radio communication device according to the support TD-SCDMA and GGE of first embodiment of the invention
Figure；
Fig. 4 show the signal of the radio communication device according to the support TD-SCDMA and GGE of second embodiment of the invention
Figure；
Fig. 5 show the schematic diagram according to the bias switching device of second embodiment of the invention；
Fig. 6 show the schematic diagram according to the bias switching device of second embodiment of the invention；
Fig. 7 show the schematic diagram according to the bias switching device of second embodiment of the invention；
Fig. 8 show the schematic diagram according to the bias switching device of second embodiment of the invention；
Fig. 9 show the signal of the radio communication device according to the support TD-SCDMA and GGE of second embodiment of the invention
Figure.
Specific embodiment
Below explanation is embodiments of the invention.Its purpose is to illustrate general principle of the invention, should not regard
It is limitation of the invention, protection scope of the present invention is when as defined in claim.
[first embodiment]
Fig. 2 show the schematic diagram according to the radio communication device 20 of first embodiment of the invention.Radio communication device 20
Support TD-SCDMA and two kinds of wireless access technologies of GGE.In fig. 2, radio frequency chip 210 receives the TD- of baseband chip 200
SCDMA fundamental frequency signals and EDGE fundamental frequency signals, treatment TD-SCDMA fundamental frequency signals and EDGE fundamental frequency signals are simultaneously changed respectively
For TD-SCDMA radiofrequency signals (hereinafter referred to as TD-SCDMA signals) and EDGE fundamental frequency signals, (hereinafter referred to as EDGE believes
Number), then export TD-SCDMA signals and EDGE signals by single-pathway 260 by transmitter 211.In the first embodiment,
Power amplifier 230 is linear EDGE power amplifiers, and its bias Vramp operates in EDGE patterns when being 0, that is, is adapted to put
The operator scheme of big EDGE signals.The bias Vramp of power amplifier 230 is coupled to 2G modules (the EDGE moulds of baseband chip 200
Block) an output, the output provide power amplifier 230 bias Vramp.The output of power amplifier 230 is then delivered to day
Line 250.In the present embodiment, the magnitude of voltage of the output is 0 so that power amplifier 230 operates in EDGE patterns.When communication sets
During standby 20 EDGE signals to be transmitted, this of the 2G modules of baseband chip 200 is output as 0, therefore power amplifier 230 is operated in
EDGE patterns, are used to amplify EDGE signals.When the TD-SCDMA signals to be transmitted of communication apparatus 20, the 2G moulds of baseband chip 200
Block is not operated, and the controlled output is still 0, therefore power amplifier 230 still operates in EDGE patterns, and according to power amplifier
230 characteristic, is applicable to amplify TD-SCDMA signals when it operates in EDGE patterns.For example, general EDGE power
Amplifier operations are in its peak power 27dBm, and the peak power of general CDMA power amplifiers is 24dBm, differs only by 3dBm,
Therefore the use of EDGE power amplifiers is that may replace CDMA power amplifiers for amplification TD-SCDMA signals.Therefore, Fig. 2 institutes
The embodiment shown only needs power amplifier 230, CDMA power amplifiers 120 has been lacked in the prior art compared to Fig. 1 and has been cut
Parallel operation 140, can save the hardware cost of radio-frequency front-end.
Although EDGE radio frequency chips are integrated into single radio frequency chip 210, EDGE bases with TD-SCDMA radio frequency chips in fig. 2
Frequency chip is integrated into single baseband chip 200, and EDGE signals and TD-SCDMA signals by same with TD-SCDMA baseband chips
One path 260 is transmitted, but the invention is not limited in this, the present embodiment is still applied to not transmit EDGE signals by same path
And the situation of TD-SCDMA signals.For example as shown in figure 3, Fig. 3 is shown according to the support TD- of first embodiment of the invention
The schematic diagram of the radio communication device 30 of SCDMA and GGE, wherein TD-SCDMA baseband chips 300A is coupled to TD-SCDMA radio frequencies
Chip 310A, EDGE baseband chip 300B is coupled to EDGE radio frequency chip 310B, and is determined TD-SCDMA by switch 340
TD-SCDMA signals that the TD-SCDMA transmitters 311A of radio frequency chip 310A is launched and EDGE radio frequency chips 310B's
One of EDGE signals that EDGE transmitters 311B is launched are coupled to power amplifier 230.The bias of power amplifier 230
Vramp is coupled to an output of EDGE baseband chips 300B, and the output voltage values are 0 so that power amplifier 230 is operated in
EDGE patterns, are used to amplify EDGE signals or TD-SCDMA signals.Identical component is using being identically numbered in Fig. 2 and Fig. 3.Such as
In communicator shown in Fig. 2 and Fig. 3, by transmitting using EDGE power amplifiers EDGE signals and TD-SCDMA signals
To reach cost-effective technique effect.
Although in the embodiment shown in Fig. 2 and Fig. 3, as the power amplification that the bias of EDGE power amplifiers is 0
Device 230 is applicable to amplify EDGE signals and TD-SCDMA signals, but thus power amplifier only operates in single increasing
Beneficial pattern, can cause that power consumption increases, further, since the operation of EDGE power amplifiers is in larger amplifying power, for amplifying TD-
Might have nonlinear effect during SCDMA signals, reduce performance, thus following examples be used to illustrate how using only
EDGE power amplifiers control the operation mould of EDGE power amplifiers in the case of amplifying EDGE signals and TD-SCDMA signals
Formula and gain mode are reaching power saving and avoid the effect of performance reduction.
[second embodiment]
Fig. 4 show showing according to the radio communication device 40 of the support TD-SCDMA and GGE of second embodiment of the invention
It is intended to.Power amplifier 430 is a linear EDGE power amplifiers, is coupled to the transmitter of antenna 250 and radio frequency chip 410
Between 411, it is used to transmit TD-SCDMA signals or EDGE signals that (amplification) transmitter 411 is transmitted, such as power amplifier
430 can be the power amplifier of model SKY77528.In a second embodiment, power amplifier 430 is a linear EDGE
Power amplifier, it has multiple bias states and each bias state one gain mode of correspondence.For example when Vramp2 is first
During voltage, its gain is the first gain, and when the bias Vramp2 of power amplifier 430 is second voltage, its gain is the
Two gains, by that analogy.Because power amplifier 430 has multiple analog bias voltages, therefore in the present embodiment by inclined
Crush-cutting changing device 420 controls the bias Vramp2 of power amplifier 430.Bias switching device 420 is coupled to power amplifier
Between 430 bias Vramp2 and baseband chip 400, the output signal of its 2G fundamental module for receiving baseband chip 400
Output signal Vramp_8PSK, Vmode and SW of the 3G fundamental modules of Vramp_GGE and baseband chip 400, and produce difference
Analog voltage providing to the bias Vramp2 of power amplifier 430.
In an example, bias switching device 420 includes switch 421 and switch 422, wherein switch 421
Output end a is coupled to the bias Vramp2 of power amplifier 430, and switch 421 is used to control power amplifier 430 to operate in
Under 2G patterns (EDGE patterns) or 3G patterns (TD-SCDMA patterns).Switch 421 is a single-pole double throw (Single Pole
Double Throw, SPDT) simulation switch, the power source supply end of switch 421 is connected to the high level electricity of integrated circuit
Pressure Vdd, control signal is connected to the output signal SW that the output pin position of the 3G fundamental modules of baseband chip 400 is exported.Cut
One input b of parallel operation 421 is coupled to the output of divider 423, and the input of divider 423 is coupled to the 2G of baseband chip 400
The output signal Vramp_GGE that the one output pin position of fundamental module is exported, another input c of switch 421 are coupled to and cut
The output end d of parallel operation 422.It is the complexity of simplify control, the output end a of the first switch 421 is coupled to input predeterminablely
End c (being also the output of the first divider 423).The power source supply end of switch 422 is connected to Vdd, and control signal is connected to
The output signal Vmode that the one output pin position of the 3G fundamental modules of baseband chip 400 is exported.The input coupling of divider 424
The output signal Vramp_8PSK that the output pin position of the 3G fundamental modules of baseband chip 400 is exported is connected to, divider 424
Output end g is coupled to the input e of switch 422, and the output end h of divider 424 is coupled to the input f of switch 422.
Output signal SW is used to control switch 421 to switch to EDGE patterns or TD-SCDMA patterns, and output signal Vmode is used to control
Switch 422 switches to which gain mode under TD-SCDMA patterns, and output signal Vramp_GGE is used to provide EDGE moulds
Bias under formula, output signal Vramp_8PSK is used to provide the bias corresponding to each gain mode under TD-SCDMA patterns.
Switch 421 is used to control power amplifier 430 to operate in EDGE patterns or TD-SCDMA patterns.When operating in
During TD-SCDMA patterns, the 3G fundamental modules of baseband chip 400 are opened, and output signal SW is drawn high to high potential (logic 1), and is worked as
When operating in EDGE patterns, 3G fundamental modules are inoperative, and output signal SW is low potential (logical zero).When output signal SW is height
During current potential, switch 421 switches to input c, that is, input c and output end a forms path.When output signal SW is low
During current potential, switch 421 switches to input b, that is, input b and output end a forms path.
Divider 423 is used to the voltage of Vramp_GGE to making power amplifier 430 operate in suitable EDGE patterns
Gain bias size.For example, when power amplifier 430 bias Vramp2 be first voltage when its corresponding first
Gain is adapted to amplify EDGE signals.Vramp_GGE is carried out partial pressure and exported by divider 423 by such as electric resistance partial pressure structure
First voltage.Therefore when EDGE patterns are operated in, SW is low potential, and input b and output end a forms path, so power is put
The bias Vramp2 of big device 430 is connected to the first voltage that divider 423 is exported, and the gain of power amplifier 430 is the
One gain, is used to amplify EDGE signals.
Switch 422 is used to switch the different gains pattern under TD-SCDMA patterns.In the present embodiment, when Vmode is
During low potential, switch 422 switches to the high gain mode under TD-SCDMA patterns, and when Vmode is high potential, switch
422 switch to the low gain mode under TD-SCDMA patterns.It is multiple that divider 424 is used to the voltage of Vramp_8PSK
Voltage is with the different gains pattern under correspondence TD-SCDMA patterns.For example, under TD-SCDMA patterns, power amplifier is worked as
Correspondence operates power amplifier 430 to the high gain mode of TD-SCDMA signals when 430 bias Vramp2 is second voltage
In the second gain, when Vramp2 is tertiary voltage, correspondence makes power amplifier 430 to the low gain mode of TD-SCDMA signals
The 3rd gain is operated in, wherein second voltage is more than tertiary voltage.Therefore divider 424 by such as electric resistance partial pressure structure by
Second voltage and the tertiary voltage of output end h that Vramp_8PSK partial pressures are exported by output end g.When transmitter 411 is launched
When needing the TD-SCDMA signals of high-gain, SW is pulled to high potential and Vmode is pulled to low potential, therefore input c and output end a
Path is formed, output end d forms path with end e is input into out, so the bias Vramp2 of power amplifier 430 is connected to second point
The second voltage that the output end g of depressor 424 is exported, and the gain of power amplifier 430 is the second gain, and be used to amplify
TD-SCDMA signals.When the transmitting of transmitter 411 needs the TD-SCDMA signals of low gain, SW is pulled to high potential and Vmode draws
To high potential, therefore input c and output end a forms path, and output end d and input f forms path, so power amplifier
430 bias Vramp2 is connected to the tertiary voltage that the output end h of divider 424 is exported, and the gain of power amplifier 430
It is the 3rd gain, and is used to amplify TD-SCDMA signals.The gain of the gain more than TD-SCDMA patterns of usual EDGE patterns, because
This usual first gain is more than the second gain, and first voltage is more than second voltage.
Second voltage and low increasing of the divider 424 by the voltage of Vramp_8PSK for high gain mode in above-mentioned example
The tertiary voltage of beneficial pattern, but also can be three even more gains by the voltage of Vramp_8PSK in other examples
The voltage of pattern.Due to the changeable EDGE patterns of switch 421 or TD-SCDMA patterns and the changeable TD-SCDMA of switch 422
The high gain mode or low gain mode of pattern, therefore power amplifier 430 has more than one gain mode, according to signal institute
The GAIN SELECT gain pattern of needs, and the effect of power saving can be reached.
It is noted that when switch 422 is selected, the switching time of switch 422 must be faster than power amplifier 430 and cut
The transient response time of gain is changed, so that the speed of the switching bias of switch 422 can get caught up in the handoff gain of power amplifier 430
The speed of pattern.
Fig. 5 show another example according to the bias switching device of second embodiment of the invention.The bias switching of Fig. 5
Device 520 is to be taken with divider group (Voltage Divider Bank) 560 with the difference of the bias switching device 420 of Fig. 4
For the switch 422 and divider 424 of Fig. 4.Divider group 560 reception Vramp_8PSK signals and Vmode signals, and according to
Vmode signals and Vramp_8PSK signals produce the correspondence bias of different gains pattern under TD-SCDMA patterns, in the example of Fig. 5
In son, divider group 530 is by the voltage of Vramp_8PSK for the high-gain of high gain mode (High Gain Mode) is inclined
The middle gain bias MGMV and low gain mode (Low Gain of pressure HGMV, middle gain mode (Medium Gain Mode)
Mode low gain bias LGMV), and be biased to according to Vmode signals switching high-gain bias, middle gain by switch 562
And low gain bias, the corresponding bias of different gains pattern under TD-SCDMA patterns is sent to the first switch 421.Wherein
The correspondence bias of different gains pattern is sequentially high-gain bias HGMV, middle gain bias from large to small under TD-SCDMA patterns
MGMV and low gain bias LGMV.Certainly the invention is not limited in three gain modes, it is also possible to by Vramp_8PSK's
The bias corresponding to gain mode that voltage is more than four.
Fig. 6 show another example according to the bias switching device of second embodiment of the invention, the bias switching of Fig. 6
Device 620 is with the switch 422 of the substitution Fig. 4 of digital analog converter 660 with the difference of the bias switching device 420 of Fig. 4
With divider 424.In the present example, digital analog converter 660 is one 10 bit digital analog converters, and it receives Vramp_
The output signal that the one output pin position of the 3G fundamental modules of 8PSK signals, Vmode signals and baseband chip 400 is exported
Vmode2, and according to Vmode signals, Vmode2 signals and Vramp_8PSK signal outputs HSUPA (High Speed
Uplink Packet Access) pattern HSUPA bias HSUPAV, high gain mode high-gain bias HGMV, middle gain
The middle gain bias MGMV of pattern and low gain bias LGMV, wherein HSUPA the bias HSUPAV of low gain mode increase more than high
Benefit bias HGMV, makes power amplifier 430 transmit the HSUPA signals of (amplification) more high speed to biased power amplifier 430.
Vmode signals are mainly used to control which kind of bias digital analog converter 660 will export with Vmode2 signals.
In addition, second divider 424 of Fig. 4 can also be provided with the divider group 560 of Fig. 5 outside high-gain bias
The HSUPA biass of higher voltage.
Fig. 7 show the schematic diagram according to the bias switching device 720 of second embodiment of the invention another example.Bias
Switching device 720 includes switch 721, the and of divider 723 of SP3T (Single Pole Triple Throw, SP3T)
724.Divider 723 receives Vramp_GGE signals, and the bias EDGEV of EDGE patterns is exported after partial pressure.Divider 724 is received
Vramp_8PSK signals, export the high-gain bias HGMV and low gain bias LGMV under TD-SCDMA patterns after partial pressure.
Which bias switch 721 switches to according to Vmode signals and SW signal decidings.When 2G communications are carried out, 3G fundamental modules
Inoperative (dormancy), output signal SW and the Vmode signal of 3G fundamental modules is all low potential (logical zero), and switch 721 will
The bias EDGEV of EDGE patterns is output as the bias Vramp2 of power amplifier 430.When 3G communications are carried out, 3G fundamental modules
Output signal SW be high potential (logic 1), if Vmode signals are low potential, switch 721 is by the height of TD-SCDMA patterns
Gain bias HGMV is output as the bias Vramp2 of power amplifier 430, if Vmode signals are high potential, switch 721 will
The low gain bias LGMV of TD-SCDMA patterns is output as the bias Vramp2 of power amplifier 430.It is the complexity of simplify control
Property, the output of switch 721 is coupled to the output of divider 723 predeterminablely.
Fig. 8 show the schematic diagram according to the bias switching device 820 of second embodiment of the invention another example.Bias
Switching device 820 includes switch 821, divider 823 and 824.Switch 821 include output end p and q and input w, x,
Y, z, wherein output end q are coupled to input x.The switch of output end p is controlled by SW signals, defeated when SW signals are low potential
Go out to hold p to be connected to input w, when SW signals are high potential, output end p is connected to input x.To save the complexity of control
Property, the output end p of switch 821 is coupled to input w (being also the output of divider 823) predeterminablely.Output end q's opens
Close by the control of Vmode signals, when Vmode signals are low potential, output end q is connected to input y, when Vmode signals are height
During current potential, output end q is connected to input z.One of ordinary skill in the art should connection output end p in input w and x its
One of switch unit and the switch unit of one of them is interpreted as two solely in connecting output end q to input y and z
Vertical part.Divider 823 receives Vramp_GGE signals, and the bias EDGEV of EDGE patterns is exported after partial pressure.Divider 824 connects
Vramp_8PSK signals are received, high-gain bias HGMV and low gain bias under TD-SCDMA patterns are exported after partial pressure
LGMV.When carrying out 2G and communicating, 3G fundamental modules are inoperative (dormancy), and the output signal SW of 3G fundamental modules (is patrolled for low potential
Collect 0), the bias EDGEV of EDGE patterns is output as switch 821 the bias Vramp2 of power amplifier 430.Lead to when 3G is carried out
During news, the output signal SW of 3G fundamental modules is high potential (logic 1), if Vmode signals are low potential, switch 821 will
The high-gain bias HGMV of TD-SCDMA patterns is output as the bias Vramp2 of power amplifier 430, if Vmode signals are electricity high
, then the low gain bias LGMV of TD-SCDMA patterns is output as switch 821 the bias Vramp2 of power amplifier 430.
Although it is noted that in fig. 4 EDGE radio frequency chips (2G radio-frequency modules) (3G is penetrated with TD-SCDMA radio frequency chips
Frequency module) it is integrated into single radio frequency chip 410, EDGE baseband chips (2G fundamental modules) and TD-SCDMA baseband chips (3G bases
Frequency module) single baseband chip 400 is integrated into, and EDGE signals and TD-SCDMA signals are sent to power and put by same path
Big device 430, but the invention is not limited in this, the present embodiment be still applied to not by same path transmit EDGE signals and
The situation of TD-SCDMA signals.For example as shown in figure 9, it is according to the support TD-SCDMA and GGE of second embodiment of the invention
Radio communication device 90 schematic diagram.TD-SCDMA baseband chips 900A is coupled to TD-SCDMA radio frequency chips 910A, EDGE
Baseband chip 900B is coupled to EDGE radio frequency chips 910B.Switch 940 is according to SW signal decidings by TD-SCDMA radio frequency chips
TD-SCDMA signals and the EDGE transmitters of EDGE radio frequency chips 910B that the TD-SCDMA transmitters 911A of 910A is launched
One of EDGE signals that 911B is launched are coupled to power amplifier 930, and its intermediate power amplifier 930 is a linear EDGE
Power amplifier.To save the complexity of control, the output end of switch 940 is coupled to EDGE transmitters 911B's predeterminablely
Output).Attenuator 970 is coupled between TD-SCDMA radio frequency chips 910A and switch 940, for preliminary decay TD-SCDMA
Signal.Such as attenuator 970 is a 8dB attenuators.Power amplifier 930 determines its gain mode according to bias Vramp2, its
Middle bias Vramp2 by Fig. 4 bias switching device 420, Fig. 5 bias switching device 520, Fig. 6 bias switching device 620,
The bias switching device 720 of Fig. 7 or the bias switching device 820 of Fig. 8 are provided.When SW signals are low potential, switch 940 will
EDGE signals are sent to power amplifier 930；When SW signals are high potential, be sent to for TD-SCDMA signals by switch 940
Power amplifier 930.
It is noted that bias switching device is not limited to the and of above-mentioned bias switching device 420,520,620,720
820, those of ordinary skill in the art can be adjusted under the function without prejudice to bias switching device, for example, scheme
4 the second switch 422 and the second divider 424 can also use low pressure difference linear voltage regulator (Low Dropout
Regulator, LDO), the substitution such as DC power converter.
In sum, the present invention transmits (amplification) TD-SCDMA by single EDGE power amplifiers 230 or 430 first
Signal and EDGE signals, therefore the cost of RF front-end circuit can be saved.Further, the present invention is by bias switching dress
Putting 420,520,620,720 or 820 carries out the bias switching of power amplifier 430, so that power amplifier 430 has multiple increasing
Beneficial pattern and reach the effect of power saving.
The above is the general introduction feature of embodiment.Those skilled in the art should easily in art
Design or adjust carrying out identical purpose and/or reach the identical excellent of embodiment described herein using based on the present invention
Point.Technical staff in art is not it will also be appreciated that identical configuration should not carried on the back away from the spirit and scope of this creation
They can make various changes, substitution and replace under the spirit and scope that this is created.Illustrative method only represents exemplary
The step of, but these steps are not necessarily to be performed with represented order.Can it is possible to additionally incorporate, replace, change order and/or disappear
It is except step is optionally to adjust and consistent with disclosed embodiment spirit and scope.
Claims (13)
1. a kind of radio communication device, supports that the radio of the first wireless access technology and the second wireless access technology is lived
It is dynamic, including：
First wireless access technology fundamental module, produces the first fundamental frequency signal for the first wireless access technology radio frequency unit
Be converted to the first radiofrequency signal；And
Second wireless access technology fundamental module, produces the second fundamental frequency signal for the second wireless access technology radio frequency unit
Be converted to the second radiofrequency signal；
Wherein, when the first wireless access technology fundamental module works, by the first wireless access technology fundamental module
Output pin position export the second control signal to a bias switch, enable the bias switch and export the 3rd and bias or the 4th inclined
Pressure gives the shared power amplifier of the second wireless access technology fundamental module, makes the power amplifier inclined according to the 3rd
Pressure or the 4th bias determine to amplify the yield value of first radiofrequency signal, wherein, the bias switch includes the first switch,
The 3rd bias and the 4th bias are coupled to, to export the 3rd bias and the 4th according to second control signal
One of in bias.
2. radio communication device according to claim 1, it is characterised in that when the first wireless access technology fundamental frequency mould
When block does not work, the default output second of the bias switch is biased gives the power amplifier, allow the power amplifier according to this
Two biass amplify the yield value of second radiofrequency signal.
3. radio communication device according to claim 2, it is characterised in that the yield value for amplifying second radiofrequency signal is big
In the yield value for amplifying first radiofrequency signal.
4. radio communication device according to claim 1, it is characterised in that first wireless access technology is that the time-division is same
Step CDMA, second wireless access technology is GSM enhancing data transfer rate evolution technologies EDGE.
5. radio communication device according to claim 2, it is characterised in that it is GSM enhancings to further include the power amplifier
Data transfer rate evolution technology EDGE power amplifiers, and its amplification is determined according to the 3rd bias or the 4th bias or the second bias
Yield value.
6. radio communication device according to claim 2, it is characterised in that further include：
The bias switch, is coupled between the power amplifier and the first wireless access technology fundamental module, gives tacit consent to defeated
Go out this second to bias and give the power amplifier, enable the power amplifier and second radiofrequency signal is amplified according to second bias
Yield value, and when second control signal is received, exports the 3rd bias or the 4th biases and give the power amplifier, makes
The energy power amplifier amplifies the yield value of first radiofrequency signal according to the 3rd bias or the 4th bias.
7. radio communication device according to claim 2, it is characterised in that second bias more than the 3rd bias, with
And the 3rd bias more than the 4th bias.
8. radio communication device according to claim 2, it is characterised in that the bias switch is further included：
Second switch, is coupled to output and second bias of first switch, to according to second control signal
Export first switch output and this second bias in one of them.
9. radio communication device according to claim 2, it is characterised in that the bias switching device includes：
Digital analog converter, to according to second control signal produce with output the 3rd bias with the 4th bias in its
One of；And
Switch, is used to be coupled to the output of the digital analog converter and second bias, to according to second control
In the output of the signal output digital analog converter and second bias one of them.
10. radio communication device according to claim 2, it is characterised in that the bias switch includes：
Divider, is used to produce and the bias of output the 3rd and the 4th bias；And
Switch, is used to be coupled to the output of the divider and second bias, to be exported according to second control signal
One of in second bias, the 3rd bias and the 4th bias.
A kind of 11. radio communication devices, support the radio of the first wireless access technology and the second wireless access technology
Activity, including：
First wireless access technology fundamental module, produces the first fundamental frequency signal for the first wireless access technology radio frequency unit
Be converted to the first radiofrequency signal；And
Second wireless access technology fundamental module, produces the second fundamental frequency signal for the second wireless access technology radio frequency unit
Be converted to the second radiofrequency signal；
Wherein, when the second wireless access technology fundamental module works, by the second wireless access technology fundamental module
The bias of output pin position output one give the shared power amplifier of the first wireless access technology fundamental module, allow the power
Amplifier determines to amplify the yield value of second radiofrequency signal according to the bias；When the second wireless access technology fundamental module
When not working, the power amplifier also receives the signal for being same as the bias, allows the power amplifier to be amplified according to the bias
The yield value of first radiofrequency signal.
12. radio communication devices according to claim 11, it is characterised in that first wireless access technology is the time-division
CDMA technological, second wireless access technology is that GSM strengthens data transfer rate evolution technology.
13. radio communication devices according to claim 11, it is characterised in that further include the power amplifier inclined according to this
Pressure determines the yield value for amplifying.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210032771.XA CN103249135B (en) | 2012-02-14 | 2012-02-14 | Radio communication device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210032771.XA CN103249135B (en) | 2012-02-14 | 2012-02-14 | Radio communication device |
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| CN103249135A CN103249135A (en) | 2013-08-14 |
| CN103249135B true CN103249135B (en) | 2017-06-23 |
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| CN105208634B (en) * | 2014-06-30 | 2019-01-22 | 展讯通信（上海）有限公司 | A kind of RF receiving/transmission device and method and mobile terminal |
| CN112886987B (en) * | 2021-03-30 | 2022-10-25 | 维沃移动通信有限公司 | Radio frequency circuit and electronic equipment |
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|---|---|---|---|---|
| CN201219264Y (en) * | 2008-06-26 | 2009-04-08 | 上海东洲罗顿通信技术有限公司 | Repeater shared power amplifier circuit in mobile communication system |
| CN101662295A (en) * | 2008-08-28 | 2010-03-03 | 英飞凌科技股份有限公司 | Radio frequency communication devices and methods |
| CN101841346A (en) * | 2009-03-19 | 2010-09-22 | 鸿富锦精密工业（深圳）有限公司 | Wireless transceiver |
| CN102055491A (en) * | 2010-04-14 | 2011-05-11 | 锐迪科创微电子（北京）有限公司 | Radio frequency front-end module and mobile communication device provided with same |
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| CN201219264Y (en) * | 2008-06-26 | 2009-04-08 | 上海东洲罗顿通信技术有限公司 | Repeater shared power amplifier circuit in mobile communication system |
| CN101662295A (en) * | 2008-08-28 | 2010-03-03 | 英飞凌科技股份有限公司 | Radio frequency communication devices and methods |
| CN101841346A (en) * | 2009-03-19 | 2010-09-22 | 鸿富锦精密工业（深圳）有限公司 | Wireless transceiver |
| CN102055491A (en) * | 2010-04-14 | 2011-05-11 | 锐迪科创微电子（北京）有限公司 | Radio frequency front-end module and mobile communication device provided with same |
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