CN102054709A - Manufacturing method of packed base plate - Google Patents
Manufacturing method of packed base plate Download PDFInfo
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- CN102054709A CN102054709A CN2009102107106A CN200910210710A CN102054709A CN 102054709 A CN102054709 A CN 102054709A CN 2009102107106 A CN2009102107106 A CN 2009102107106A CN 200910210710 A CN200910210710 A CN 200910210710A CN 102054709 A CN102054709 A CN 102054709A
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Abstract
A manufacturing method of packed base plate comprises the following steps: providing a base material which comprises a deforming membrane, a first assistant dielectric layer coating the deforming membrane and a metal layer corresponding to the surface of the deforming membrane and formed on the first assistant dielectric layer and is defined with an available zone on each metal layer, wherein the metal layer is formed with an internal circuit layer; forming layer-increasing structures on each first assistant dielectric layer and the internal circuit layer, wherein the outermost layer of each increasing-layer structure is provided with a plurality of first electric contact cushions, and an initial base plate is formed on the deforming membrane; removing the part out of the available zone; removing the deforming membrane; forming multiple dielectric layer opened holes on the first assistant dielectric layer so that the initial base plate forms the base plate body and a part of internal circuit part is correspondingly exposed out of each dielectric layer open hole, thereby using as a second electric contact cushion. In the invention, the deforming membrane is coated by using the first assistant dielectric layer; therefore, only the deforming membrane is required to be removed and abandoned finally, thereby effectively preventing the waste problem caused by abandoning a temporary carrier.
Description
Technical field
The present invention relates to a kind of method for making of base plate for packaging, particularly relate to a kind of method for making that can avoid abandoning in the base plate for packaging manufacturing process base plate for packaging of the waste that interim carrier causes.
Background technology
Flourish along with electronic industry, electronic product multi-functional, the high performance trend of also marching toward gradually.In order to satisfy the package requirements of the high degree of integration of semiconductor package part (integration) and microminiaturized (miniaturization), carry for how main passive device and circuit and to connect, conductor package substrate also develops into multilayer circuit board (multi-layer board) by double-layer circuit board gradually, enlarging with utilization interlayer interconnection technique (interlayer connection) under limited space can be for the configuration area that utilizes on the conductor package substrate, need with the integrated circuit (integrated circuit) that cooperates elevated track density, and reduce the thickness of base plate for packaging, and it is compact and improve the purpose of electrical functionality to reach packaging part.
In the prior art, multilayer circuit board is by a core board and is symmetrically formed in the circuit layer reinforced structure of its both sides and is constituted, because of using core board to cause conductor length and overall structure thickness to increase, be difficult to satisfy the electronic product function constantly to promote and demand that volume constantly dwindles, then develop the circuit board that no stratum nucleare (coreless) structure, with the trend that shortens conductor length and reduce overall structure thickness and meet high frequencyization, microminiaturization.See also Figure 1A to Fig. 1 F, be the cross-sectional schematic of existing base plate for packaging and method for making thereof.
Shown in Figure 1A, at first, provide a loading plate 10, respectively be provided with in regular turn on two surfaces of this loading plate 10 thin film metal layer 11, fractal film 12, with bearing metal layer 13.
Shown in Figure 1B, on this bearing metal layer 13, form first dielectric layer 14.
Shown in Fig. 1 C, in this first dielectric layer 14, melt (laser ablation) and form a plurality of blind holes 140, on bearing metal layer 13 surface that described blind hole 140 is exposed, form a plurality of depressions (concave) 130 with etching mode again with exposure imaging (photolithography) or laser burning.
Shown in Fig. 1 D, in the blind hole 140 of each depression 130 and correspondence, form the solder projection 141a and the first conductive blind hole 141b in regular turn, and on this first dielectric layer 14, form first line layer 142 that electrically connects this first conductive blind hole 141b; Then; on this first dielectric layer 14 and first line layer 142, form layer reinforced structure 15; this layer reinforced structure 15 comprises at least one second dielectric layer 151; be located at second line layer 152 on this second dielectric layer 151; and a plurality ofly be located in this second dielectric layer 151 and electrically connect this first line layer 142 and second conductive blind hole 153 of second line layer 152; and these layer reinforced structure 15 outermost second line layers 152 also have a plurality of electric contact mats 154; on these layer reinforced structure 15 outermost layers, form insulating protective layer 16 again, and this insulating protective layer 16 is formed with the insulating protective layer perforate 160 that a plurality of correspondences expose each electric contact mat 154.
Shown in Fig. 1 E, by this fractal film 12 separating this bearing metal layer 13, to make the two initial base plate for packaging 1 that break away from these loading plates 10.
Shown in Fig. 1 F, remove this bearing metal layer 13, forming a plurality of solder projection 141a that protrude in these first dielectric layer, 14 surfaces, making base plate for packaging, thereby this solder projection 141a puts the semiconductor chip (not shown) for the back continued access.
As from the foregoing, the method for making of existing base plate for packaging is to form the fractal film 12 that two surfaces all are provided with thin film metal layer 11 on the both sides of this loading plate 10 respectively, forms layer reinforced structure 15 respectively again on the thin film metal layer 11 of aforementioned structure both sides; At last, separate the build-up circuit structure of both sides and form two base plate for packaging with the interface of bearing metal layer 13 along this fractal film 12.
But, existing method for making needs additionally to form on two surfaces of this loading plate 10 thin film metal layer 11 and fractal film 12 structure with temporary transient support both sides, and the interim carrier in the middle of finally all will abandoning (comprising loading plate 10, double-layer films metal level 11 and two-layer fractal film 12), this will cause, and manufacturing process is complicated, waste material and increase production cost.
Therefore, in view of the above-mentioned problems, how to avoid problems such as waste that interim carrier caused in the middle of need abandoning of the method for making of the base plate for packaging of prior art and manufacturing process be complicated, the real problem that has become present anxious desire solution.
Summary of the invention
In view of the many disadvantages of above-mentioned prior art, main purpose of the present invention provides a kind of method for making and base material of base plate for packaging, can save material cost.
For reaching above-mentioned and other purpose, the invention provides a kind of method for making of base plate for packaging, comprise: a base material is provided, by fractal film with relative two surfaces, respectively be formed at the surface of this fractal film and coat this fractal film the first auxiliary dielectric layer, and the metal level that is formed at respectively on this first auxiliary dielectric layer form, and on each metal level, define active zone; Form the internal wiring layer at this metal level; Form layer reinforced structure on each first auxiliary dielectric layer and internal wiring layer, the outermost surface of each layer reinforced structure has a plurality of first electric contact mats, to form initial substrate on two surfaces of this fractal film; Remove this active zone part in addition; Remove this fractal film; And on this first auxiliary dielectric layer, form a plurality of dielectric layer perforates, form substrate body to make this initial substrate, and make the part correspondence of this internal wiring layer expose, thereby be provided as second electric contact mat for each dielectric layer perforate.
In the aforesaid method for making, the method for making of this base material can comprise: this fractal film is provided; Place this first auxiliary dielectric layer and metal level in regular turn on relative two surfaces of this fractal film, and the area of this first auxiliary dielectric layer is greater than the area of this fractal film, the area of this metal level is greater than the area of this first auxiliary dielectric layer again; And each metal level of pressing, first is assisted dielectric layer, is reached fractal film.
In the aforesaid method for making, this layer reinforced structure can have at least one dielectric layer, be located at the line layer on this dielectric layer and be located in this dielectric layer and electrically connect this line layer and the conductive blind hole of internal wiring layer, and the line layer of outermost electrically connects this first electric contact mat.
In the aforesaid method for making, remove this active zone part in addition and can pass through cutting mode.
Aforesaid method for making also can be included on this layer reinforced structure and form insulating protective layer, and this insulating protective layer has a plurality of insulating protective layer perforates, exposes for each insulating protective layer perforate with each first electric contact mat correspondence of order.
In addition, aforesaid method for making also can be included on this first electric contact mat and second electric contact mat and form surface-treated layer.
The present invention also provides a kind of method for making of base plate for packaging, comprise: a base material is provided, be by fractal film with relative two surfaces, respectively be formed at the surface of this fractal film and coat this fractal film the first auxiliary dielectric layer, and be formed at core board on this first auxiliary dielectric layer respectively, each core board has opposite first and second surface, on this first surface and second surface, has internal layer circuit, and the second surface of each core board is bonded on this first auxiliary dielectric layer, and defines active zone on the first surface of each core board; Form layer reinforced structure on the first surface of each core board, forming initial substrate on two surfaces of this fractal film, and each layer reinforced structure outermost surface has a plurality of first electric contact mats; Remove each active zone part in addition; Remove this fractal film; And on this first auxiliary dielectric layer, form a plurality of dielectric layer perforates, form substrate body to make this initial substrate, and make the internal layer circuit correspondence on the second surface of this core board expose, thereby be provided as second electric contact mat for each dielectric layer perforate.
In the aforesaid method for making, the method for making of this base material can comprise: this fractal film is provided; On relative two surfaces of this fractal film, place this first auxiliary dielectric layer and core board in regular turn, and the area of this first auxiliary dielectric layer is greater than the area of this fractal film, the area of each core board covers this first auxiliary dielectric layer greater than the area of this first auxiliary dielectric layer fully to make each core board again; And each core board of pressing, first is assisted dielectric layer, is reached fractal film.
In the aforesaid method for making, also can have conductive through hole in this core board, to electrically connect the internal layer circuit on this first surface and the second surface.
In the aforesaid method for making, this layer reinforced structure can have at least one dielectric layer, be located at the line layer on this dielectric layer and be located in this dielectric layer and electrically connect the conductive blind hole of this line layer and internal layer circuit, and the line layer of outermost electrically connects this first electric contact mat.
In the aforesaid method for making, remove this active zone part in addition and can pass through cutting mode.
Aforesaid method for making also can be included on this layer reinforced structure and form insulating protective layer, and this insulating protective layer has a plurality of insulating protective layer perforates, exposes for each insulating protective layer perforate with each first electric contact mat correspondence of order.
Aforesaid method for making also can be included on this first electric contact mat and second electric contact mat and form surface-treated layer.
In the aforesaid method for making, this base material also can have the auxiliary dielectric layer of second on the first surface of being located at this core board and be located at this second metal level of assisting on dielectric layer.The method for making of this base material can comprise again: this fractal film is provided; On relative two surfaces of this fractal film, place this first auxiliary dielectric layer, core board, second auxiliary dielectric layer and the metal level in regular turn, and the area of this first auxiliary dielectric layer is greater than the area of this fractal film, the area of each core board is greater than the area of this first auxiliary dielectric layer, the area of this metal level covers this second auxiliary dielectric layer and core board greater than the area of this second auxiliary dielectric layer and core board fully to make this metal level again; And each core board of pressing, metal level, the first auxiliary dielectric layer, the second auxiliary dielectric layer, and fractal film.
Aforesaid method for making can comprise that also this metal level forms the internal wiring layer, be located on this second auxiliary dielectric layer and the internal wiring layer to make this layer reinforced structure, and this internal wiring layer has the inner conductive blind hole that is arranged in this second auxiliary dielectric layer, to electrically connect this internal layer circuit.
In the aforesaid method for making; this layer reinforced structure can have at least one dielectric layer, be located at the line layer on this dielectric layer and be located in this dielectric layer and electrically connect this line layer and the conductive blind hole of internal wiring layer; and each first electric contact mat electrically connects the line layer of outermost; on this layer reinforced structure, form insulating protective layer again; and this insulating protective layer has a plurality of insulating protective layer perforates, exposes for each insulating protective layer perforate with each first electric contact mat correspondence of order.
As from the foregoing, the present invention coats fractal film by the auxiliary dielectric layer of first in this base material, makes line construction again on this first auxiliary dielectric layer, and is last, separates the structure of both sides and forms two base plate for packaging along the interface of this fractal film; Compared with prior art, initial stage of the present invention utilizes this first auxiliary dielectric layer to coat middle fractal film, on the first auxiliary dielectric layer, to form the initial substrate structure, thereby only need remove at last and abandon this fractal film, effectively avoid as abandoning problems such as waste that interim carrier causes and manufacturing process be complicated in the prior art.
Description of drawings
Figure 1A to Fig. 1 F is the cross-sectional schematic of the method for making of existing base plate for packaging;
Fig. 2 A to Fig. 2 H is the cross-sectional schematic of the method for making of base plate for packaging of the present invention;
Fig. 3 A to Fig. 3 G is the cross-sectional schematic of the method for making of base plate for packaging of the present invention;
Fig. 4 A to Fig. 4 E is the cross-sectional schematic of the method for making of base plate for packaging of the present invention.
Wherein, description of reference numerals is as follows:
1 initial base plate for packaging
10 loading plates
11 thin film metal layers
12,20,30 fractal films
13 bearing metal layers
130 depressions
14 first dielectric layers
140 blind holes
The 141a solder projection
141b first conductive blind hole
142 first line layers
15,23,33 layer reinforced structures
151 second dielectric layers
152 second line layers
153 second conductive blind holes
154 electric contact mats
16,24,34 insulating protective layers
160,240,340 insulating protective layer perforates
2,3,4 substrate body
2 ', 3 ' initial substrate
2a, 3a, 4a base material
21,21a, 31, the 31a first auxiliary dielectric layer
210,310 dielectric layer perforates
22,36 internal wiring layers
22a, the 36a metal level
220,320a second electric contact mat
230,330 dielectric layers
231,331 line layers
232,332 conductive blind holes
233,333 first electric contact mats
25,35 surface-treated layers
The 31b second auxiliary dielectric layer
32 core boards
The 32a first surface
The 32b second surface
320 internal layer circuits
321 conductive through holes
360 inner conductive blind holes
A, B, C active zone
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.
First embodiment
See also Fig. 2 A to Fig. 2 H, be the method for making cross-sectional schematic of base plate for packaging of the present invention.
Shown in Fig. 2 A and Fig. 2 B, at first, one base material 2a is provided, this base material 2a by the fractal film 20 with relative two surfaces, be formed on the surface of this fractal film 20 and coat this fractal film 20 the first auxiliary dielectric layer 21, and the metal level 22a that relative two surfaces that should fractal film 20 are located on this first auxiliary dielectric layer 21 form, and on this metal level 22a, define active zone A.
The method for making of this base material 2a can be: at first, fractal film 20 with relative two surfaces is provided, on relative two surfaces of this fractal film 20, form the first auxiliary dielectric layer 21a respectively, and the area of this first auxiliary dielectric layer 21a is greater than the area of this fractal film 20, on this first auxiliary dielectric layer 21a, be provided with metal level 22a, and the area of this metal level 22a is greater than the area of this first auxiliary dielectric layer 21a.
Then, the metal level 22a of these fractal film 20 both sides of pressing and the first auxiliary dielectric layer 21a, make first of these fractal film 20 both sides assist dielectric layer 21a to be combined into one and become first of simple layer and assist dielectric layer 21 and coat this fractal film 20, and each metal level 22a covers the upper and lower surface of this first auxiliary dielectric layer 21 fully.So, can make the base material 2a of the base plate for packaging that is used in the no stratum nucleare (coreless) of making the justifying face.
In follow-up manufacturing process,,, state clearly hereby so only explain with the wherein surface of this fractal film 20 because of 20 liang of lip-deep manufacturing process of this fractal film are all identical.
Shown in Fig. 2 C, this metal level 22a carries out Patternized technique to form internal wiring layer 22; Various relevant for utilizing metal material to form the technology of circuit, but that this is an industry is known, and its not this Applicant's Abstract graph technical characterictic, so repeat no more, state clearly hereby.
Shown in Fig. 2 D, on this internal wiring layer 22, form layer reinforced structure 23, on relative two surfaces of this fractal film 20, to form initial substrate 2 ', this layer reinforced structure 23 has at least one dielectric layer 230, be located at line layer 231 on this dielectric layer 230, and a plurality of conductive blind holes 232 that are located in this dielectric layer 230 and electrically connect this line layer 231 and internal wiring layer 22, and the line layer 231 of outermost has first electric contact mat 233.
Again can be in this step; on the layer reinforced structure 23 of this initial substrate 2 ', form for example insulating protective layer 24 of anti-wlding; and in this insulating protective layer 24, form a plurality of insulating protective layer perforates 240, with each first electric contact mat, 233 corresponding outer each insulating protective layer perforate 240 that are exposed at of order.
Shown in Fig. 2 E and Fig. 2 F, remove this active zone A structure in addition by cutting mode, shown in 2E figure; Remove this fractal film 20 again, separate with this fractal film 20 to make each initial substrate 2 ', shown in Fig. 2 F.
Shown in Fig. 2 G, on this first auxiliary dielectric layer 21, form a plurality of dielectric layer perforates 210, make 22 corresponding outer each the dielectric layer perforate 210 that are exposed at of partial interior line layer, being provided as second electric contact mat 220, thereby make this initial substrate 2 ' form substrate body 2.
Shown in Fig. 2 H, on this first electric contact mat 233 and second electric contact mat 220, form surface-treated layer 25, to obtain the seedless layer package substrate of justifying face; Set type on the seedless layer package substrate of this justifying face and be laid with a plurality of seedless layer package substrates unit, can pass through cutting technique, obtain each seedless layer package substrate unit with separation.
The present invention utilizes this first auxiliary dielectric layer 21 to coat this fractal film 20, and middle two-layer metal level 22a can patterned technology and become internal wiring layer 22, thereby only need remove at last and abandon this fractal film 20, effectively avoid as abandoning problems such as waste that interim carrier causes and manufacturing process be complicated in the prior art.
Second embodiment
See also Fig. 3 A to Fig. 3 G, be the method for making of second embodiment of base plate for packaging of the present invention; In the present embodiment, be applied on the base plate for packaging with thin stratum nucleare, should thin stratum nucleare be that thickness can be the following core board of 0.2mm, thin excessively, too soft because of being somebody's turn to do the thickness that approaches stratum nucleare, the easy edge that makes the justifying face because of the spray pressure or the gravity of the soup in the manufacturing process, air knife produces warpage, causes substrate transportation process easily to go to pot, or generation clamp, cause and produce problems such as line stops, so by technology of the present invention, to make base plate for packaging with thin stratum nucleare; The main difference of present embodiment and the foregoing description is in the structure of this base material.
Shown in Fig. 3 A and Fig. 3 B, one base material 3a is provided, this base material 3a by the fractal film 30 with relative two surfaces, be formed on the surface of this fractal film 30 and coat this fractal film 30 the first auxiliary dielectric layer 31, and be located at core board 32 on this first auxiliary dielectric layer 31 respectively, and on this core board 32, define active zone B.
The method for making of this base material 3a can be: at first, provide the fractal film 30 with relative two surfaces, be placed with the first auxiliary dielectric layer 31a on relative two surfaces of this fractal film 30, and the area of this first auxiliary dielectric layer 31a is greater than the area of this fractal film 30.
Then, described core board 32 is provided, each core board 32 has corresponding first surface 32a and second surface 32b, and corresponding respectively each the first auxiliary dielectric layer 31a of the second surface 32b of described core board 32, and the area of this core board 32 is greater than the area of this first auxiliary dielectric layer 31a again.
At last, the core board 32 of these fractal film 30 both sides of pressing and the first auxiliary dielectric layer 31a, make first of these fractal film 30 both sides assist dielectric layer 31a to be combined as a whole and become first of simple layer and assist dielectric layer 31 and coat this fractal film 30, and the second surface 32b that makes this core board 32 is combined on this first auxiliary dielectric layer 31, and makes described core board 32 cover the upper and lower surface of this first auxiliary dielectric layer 31 respectively; This active zone B is that definition is located on the first surface 32a of this core board 32 again.Use to make to be used in and make the base material 3a that the justifying mask has the base plate for packaging of thin stratum nucleare.
Have internal layer circuit 320 on the first surface 32a of described core board 32 and the second surface 32b, and in this core board 32, have conductive through hole 321, to be electrically connected to the internal layer circuit 320 on this first surface 32a and the second surface 32b.
In follow-up manufacturing process,,, state clearly hereby so only explain with the wherein surface of this fractal film 30 because of 30 liang of lip-deep manufacturing process of this fractal film are all identical.
Shown in Fig. 3 C, on the first surface 32a of this core board 32 and internal layer circuit 320, form layer reinforced structure 33, on relative two surfaces of this fractal film 30, to form initial substrate 3 ', this layer reinforced structure 33 has at least one dielectric layer 330, be located at the line layer 331 on this dielectric layer 330 and be located in this dielectric layer 330 and be electrically connected to the conductive blind hole 332 of this line layer 331 and internal layer circuit 320, and the line layer 331 of outermost has a plurality of first electric contact mats 333.
Formation insulating protective layer 34 on the layer reinforced structure 33 of this initial substrate 3 ', and this insulating protective layer 34 again has a plurality of insulating protective layer perforates 340, with each first electric contact mat, 333 corresponding outer each insulating protective layer perforate 340 that are exposed at of order; But this insulating protective layer 34 also can form in subsequent process steps.
Shown in Fig. 3 D and Fig. 3 E, remove this active zone B structure in addition by cutting mode, shown in Fig. 3 D; Remove this fractal film 30 again, separate with this fractal film 30 to make each initial substrate 3 ', shown in Fig. 3 E.
Shown in Fig. 3 F and Fig. 3 G, on this first auxiliary dielectric layer 31, form a plurality of dielectric layer perforates 310, make part internal layer circuit 320 corresponding outer each the dielectric layer perforate 310 that are exposed on the second surface 32b of this core board 32, to be provided as the second electric contact mat 320a, thereby make this initial substrate 3 ' form substrate body 3, shown in Fig. 3 F; On this first electric contact mat 333 and the second electric contact mat 320a, form surface-treated layer 35 again, to obtain the thin stratum nucleare base plate for packaging of justifying face, shown in Fig. 3 G.
The present invention utilizes this first auxiliary dielectric layer 31 to coat this fractal film 30, on the first two-layer auxiliary dielectric layer 31, core board 32 to be set, thereby only need remove at last and abandon this fractal film 30, effectively to avoid as abandoning problems such as waste that interim carrier caused and manufacturing process be complicated in the prior art.
The 3rd embodiment
See also Fig. 4 A to Fig. 4 E, be the method for making of the 3rd embodiment of base plate for packaging of the present invention; The main difference of present embodiment and the foregoing description is in the structure of this base material.
Shown in Fig. 4 A, one base material 4a is provided, this base material 4a be by have two relatively the surface fractal film 30, be formed on the surface of this fractal film 30 and coat the first auxiliary dielectric layer 31 of this fractal film 30, respectively be located at core board 32 on this first auxiliary dielectric layer 31, be located at the second auxiliary dielectric layer 31b on the first surface 32a of this core board 32 and be located at metal level 36a on this second auxiliary dielectric layer 31b, and the metal level 36a above this core board 32 defines active zone C.
This base material 4a is by the moulding of pressing mode, can be with reference to described in preceding two embodiment, and the area of this metal level 36a covers this second auxiliary dielectric layer 31b and core board 32 greater than the area of this core board 32 and the second auxiliary dielectric layer 31b fully to make this metal level 36a.So, can make to be used in and make the base material 4a that the justifying mask has the base plate for packaging of thin stratum nucleare.
Shown in Fig. 4 B, forming internal wiring layer 36, and this internal wiring layer 36 has the position in this second auxiliary dielectric layer 31b and be electrically connected to the inner conductive blind hole 360 of this internal layer circuit 320 to this metal level 36a via Patternized technique.Various relevant for the technology of making circuit and blind hole, but that this is an industry is known, and its non-present techniques feature, so repeat no more.
Shown in Fig. 4 C, on this second auxiliary dielectric layer 31b and internal wiring layer 36, form this layer reinforced structure 33, and this conductive blind hole 332 electrically connects this line layer 331 and internal wiring layer 36.
Shown in Fig. 4 D and Fig. 4 E, remove this active zone C structure in addition by cutting mode earlier, remove this fractal film 30 again, then on this first auxiliary dielectric layer 31, form a plurality of dielectric layer perforates 310, expose outside in each dielectric layer perforate 310 with each second electric contact mat 320a correspondence of order, thereby form substrate body 4, shown in Fig. 4 D.In follow-up manufacturing process, also surface-treated layer 35 can be formed on this first electric contact mat 333 and the second electric contact mat 320a, shown in Fig. 4 E, to obtain the thin stratum nucleare base plate for packaging of justifying face.
The present invention utilizes this first auxiliary dielectric layer 31 to coat this fractal film 30, on the first two-layer auxiliary dielectric layer 31, core board 32 to be set, and the metal level 36a on this core board 32 can patterned technology and is become internal wiring layer 36, thereby only need remove at last and abandon this fractal film 30, thereby can effectively avoid as abandoning problems such as waste that interim carrier causes and manufacturing process be complicated in the prior art.
The foregoing description is in order to illustrative principle of the present invention and effect thereof, but not is used to limit the present invention.Any those skilled in the art all can make amendment to the foregoing description under spirit of the present invention and category.Therefore the scope of the present invention should be foundation with the scope of claims.
Claims (17)
1. the method for making of a base plate for packaging is characterized in that, comprising:
One base material is provided, by fractal film with relative two surfaces, be respectively formed at the surface of this fractal film and coat the first auxiliary dielectric layer of this fractal film and the metal level that is respectively formed on this first auxiliary dielectric layer is formed, and on each metal level, define active zone;
Form the internal wiring layer at this metal level;
Form layer reinforced structure on each first auxiliary dielectric layer and internal wiring layer, the outermost surface of each layer reinforced structure has a plurality of first electric contact mats, to form initial substrate on two surfaces of this fractal film;
Remove this active zone part in addition;
Remove this fractal film; And
On this first auxiliary dielectric layer, form a plurality of dielectric layer perforates, form substrate body to make this initial substrate, and make partial interior line layer correspondence be exposed at each dielectric layer perforate outward, thereby be provided as second electric contact mat.
2. the method for making of base plate for packaging according to claim 1 is characterized in that, the method for making of this base material comprises:
This fractal film is provided;
Place this first auxiliary dielectric layer and metal level in regular turn on relative two surfaces of this fractal film, and the area of this first auxiliary dielectric layer is greater than the area of this fractal film, the area of this metal level is greater than the area of this first auxiliary dielectric layer again; And
Each metal level of pressing, first is assisted dielectric layer, is reached fractal film.
3. the method for making of base plate for packaging according to claim 1, it is characterized in that, this layer reinforced structure has at least one dielectric layer, be located at the line layer on this dielectric layer and be located in this dielectric layer and electrically connect this line layer and the conductive blind hole of internal wiring layer, and the line layer of outermost electrically connects this first electric contact mat.
4. the method for making of base plate for packaging according to claim 1 is characterized in that, removing this active zone part in addition is to pass through cutting mode.
5. the method for making of base plate for packaging according to claim 1; it is characterized in that; this method for making also is included on this layer reinforced structure and forms insulating protective layer, and this insulating protective layer forms a plurality of insulating protective layer perforates, is exposed at each insulating protective layer perforate outward with each first electric contact mat correspondence of order.
6. the method for making of base plate for packaging according to claim 1 or 5 is characterized in that this method for making also is included on this first electric contact mat and second electric contact mat and forms surface-treated layer.
7. the method for making of a base plate for packaging is characterized in that, comprising:
One base material is provided, be by fractal film, be respectively formed at the surface of this fractal film and coat first of this fractal film and assist dielectric layer and be respectively formed at this first core board of assisting on dielectric layer with relative two surfaces, each core board has opposite first and second surface, on this first surface and second surface, has internal layer circuit, and the second surface of each core board is bonded on this first auxiliary dielectric layer, and defines active zone on the first surface of each core board;
Form layer reinforced structure on the first surface of each core board, forming initial substrate on two surfaces of this fractal film, and each layer reinforced structure outermost surface has a plurality of first electric contact mats;
Remove each active zone part in addition;
Remove this fractal film; And
On this first auxiliary dielectric layer, form a plurality of dielectric layer perforates, form substrate body, and make the internal layer circuit correspondence on the second surface of this core board be exposed at each dielectric layer perforate outward, thereby be provided as second electric contact mat to make this initial substrate.
8. the method for making of base plate for packaging according to claim 7 is characterized in that, the method for making of this base material comprises:
This fractal film is provided;
On relative two surfaces of this fractal film, place this first auxiliary dielectric layer and core board in regular turn, and the area of this first auxiliary dielectric layer is greater than the area of this fractal film, the area of each core board covers this first auxiliary dielectric layer greater than the area of this first auxiliary dielectric layer fully to make each core board again; And
Each core board of pressing, first is assisted dielectric layer, is reached fractal film.
9. the method for making of base plate for packaging according to claim 7 is characterized in that, also has conductive through hole in this core board, to electrically connect the internal layer circuit on this first surface and the second surface.
10. the method for making of base plate for packaging according to claim 7, it is characterized in that, this layer reinforced structure has at least one dielectric layer, be located at the line layer on this dielectric layer and be located in this dielectric layer and electrically connect the conductive blind hole of this line layer and internal layer circuit, and the line layer of outermost electrically connects this first electric contact mat.
11. the method for making of base plate for packaging according to claim 7 is characterized in that, removing this active zone part in addition is to pass through cutting mode.
12. the method for making of base plate for packaging according to claim 7; it is characterized in that; this method for making also is included on this layer reinforced structure and forms insulating protective layer, and this insulating protective layer has a plurality of insulating protective layer perforates, is exposed at each insulating protective layer perforate outward with each first electric contact mat correspondence of order.
13. the method for making according to claim 7 or 12 described base plate for packaging is characterized in that, this method for making also is included on this first electric contact mat and second electric contact mat and forms surface-treated layer.
14. the method for making of base plate for packaging according to claim 7 is characterized in that, this base material also has the auxiliary dielectric layer of second on the first surface that is located at this core board and is located at this second metal level of assisting on dielectric layer.
15. the method for making of base plate for packaging according to claim 14 is characterized in that, the method for making of this base material comprises:
This fractal film is provided;
On relative two surfaces of this fractal film, place this first auxiliary dielectric layer, core board, second auxiliary dielectric layer and the metal level in regular turn, and the area of this first auxiliary dielectric layer is greater than the area of this fractal film, the area of each core board is greater than the area of this first auxiliary dielectric layer, the area of this metal level covers this second auxiliary dielectric layer and core board greater than the area of this second auxiliary dielectric layer and core board fully to make this metal level again; And
Each core board of pressing, metal level, the first auxiliary dielectric layer, second are assisted dielectric layer, are reached fractal film.
16. the method for making of base plate for packaging according to claim 14, it is characterized in that, this method for making comprises that also this metal level forms the internal wiring layer, to make this layer reinforced structure be located on this second auxiliary dielectric layer and the internal wiring layer, and this internal wiring layer has the inner conductive blind hole of position in this second auxiliary dielectric layer, to electrically connect this internal layer circuit.
17. the method for making of base plate for packaging according to claim 16; it is characterized in that; this layer reinforced structure has at least one dielectric layer, be located at the line layer on this dielectric layer and be located in this dielectric layer and electrically connect this line layer and the conductive blind hole of internal wiring layer; and each first electric contact mat electrically connects the line layer of outermost; on this layer reinforced structure, form insulating protective layer again; and this insulating protective layer has a plurality of insulating protective layer perforates, is exposed at each insulating protective layer perforate outward with each first electric contact mat correspondence of order.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681531A (en) * | 2013-11-27 | 2015-06-03 | 矽品精密工业股份有限公司 | Package substrate and method for fabricating the same |
| WO2017152714A1 (en) * | 2016-03-07 | 2017-09-14 | 武汉光谷创元电子有限公司 | Carrier and manufacturing method therefor, and method for manufacturing core-less package substrate using carrier |
| CN113710013A (en) * | 2020-05-22 | 2021-11-26 | 宏启胜精密电子(秦皇岛)有限公司 | Manufacturing method of circuit board intermediate, circuit board and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101414595B (en) * | 2007-10-18 | 2012-08-08 | 欣兴电子股份有限公司 | Package substrate and manufacturing method thereof |
| CN101567356B (en) * | 2008-04-23 | 2010-12-08 | 全懋精密科技股份有限公司 | Circuit board structure and manufacture method thereof |
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2009
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681531A (en) * | 2013-11-27 | 2015-06-03 | 矽品精密工业股份有限公司 | Package substrate and method for fabricating the same |
| CN104681531B (en) * | 2013-11-27 | 2019-01-15 | 矽品精密工业股份有限公司 | Package substrate and method for fabricating the same |
| WO2017152714A1 (en) * | 2016-03-07 | 2017-09-14 | 武汉光谷创元电子有限公司 | Carrier and manufacturing method therefor, and method for manufacturing core-less package substrate using carrier |
| CN113710013A (en) * | 2020-05-22 | 2021-11-26 | 宏启胜精密电子(秦皇岛)有限公司 | Manufacturing method of circuit board intermediate, circuit board and manufacturing method thereof |
| CN113710013B (en) * | 2020-05-22 | 2022-09-16 | 宏启胜精密电子(秦皇岛)有限公司 | Manufacturing method of circuit board intermediate, circuit board and manufacturing method thereof |
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