CN102054668A - 电子束正性光刻胶Zep 520 掩蔽介质刻蚀的方法 - Google Patents
电子束正性光刻胶Zep 520 掩蔽介质刻蚀的方法 Download PDFInfo
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- CN102054668A CN102054668A CN2009102367194A CN200910236719A CN102054668A CN 102054668 A CN102054668 A CN 102054668A CN 2009102367194 A CN2009102367194 A CN 2009102367194A CN 200910236719 A CN200910236719 A CN 200910236719A CN 102054668 A CN102054668 A CN 102054668A
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- zep
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- etching
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 16
- 230000000873 masking effect Effects 0.000 title abstract description 3
- 239000000460 chlorine Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000010894 electron beam technology Methods 0.000 claims abstract description 12
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000003292 glue Substances 0.000 claims description 30
- 238000007348 radical reaction Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000010792 warming Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000001459 lithography Methods 0.000 abstract description 4
- 238000000992 sputter etching Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (7)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009102367194A CN102054668B (zh) | 2009-10-28 | 2009-10-28 | 电子束正性光刻胶Zep 520掩蔽介质刻蚀的方法 |
PCT/CN2010/074592 WO2011050623A1 (zh) | 2009-10-28 | 2010-06-28 | 图案化方法 |
US12/922,944 US8338084B2 (en) | 2009-10-28 | 2010-06-28 | Patterning method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009102367194A CN102054668B (zh) | 2009-10-28 | 2009-10-28 | 电子束正性光刻胶Zep 520掩蔽介质刻蚀的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102054668A true CN102054668A (zh) | 2011-05-11 |
CN102054668B CN102054668B (zh) | 2012-02-22 |
Family
ID=43921291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009102367194A Active CN102054668B (zh) | 2009-10-28 | 2009-10-28 | 电子束正性光刻胶Zep 520掩蔽介质刻蚀的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8338084B2 (zh) |
CN (1) | CN102054668B (zh) |
WO (1) | WO2011050623A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015184719A1 (zh) * | 2014-06-07 | 2015-12-10 | 北京工业大学 | 湿环境下电子束直接纳米刻蚀或印刷的方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110287593A1 (en) * | 2010-05-20 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor film and method for manufacturing semiconductor device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6090672A (en) * | 1998-07-22 | 2000-07-18 | Wanlass; Frank M. | Ultra short channel damascene MOS transistors |
TW425632B (en) * | 1998-08-19 | 2001-03-11 | Vanguard Int Semiconduct Corp | Etching method of contact hole |
US7151017B2 (en) * | 2001-01-26 | 2006-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US6919251B2 (en) * | 2002-07-31 | 2005-07-19 | Texas Instruments Incorporated | Gate dielectric and method |
CN100334693C (zh) * | 2004-05-21 | 2007-08-29 | 中国科学院微电子研究所 | 15-50纳米线宽多晶硅栅的刻蚀方法 |
CN1746773A (zh) * | 2004-09-08 | 2006-03-15 | 上海宏力半导体制造有限公司 | 导电结构的图案转移方法 |
US8815617B2 (en) * | 2004-10-01 | 2014-08-26 | Finisar Corporation | Passivation of VCSEL sidewalls |
US7902074B2 (en) * | 2006-04-07 | 2011-03-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US8232176B2 (en) * | 2006-06-22 | 2012-07-31 | Applied Materials, Inc. | Dielectric deposition and etch back processes for bottom up gapfill |
KR100807234B1 (ko) * | 2006-11-16 | 2008-02-28 | 삼성전자주식회사 | 포토레지스트 제거방법 및 반도체 소자의 제조 방법 |
US7501353B2 (en) * | 2006-12-22 | 2009-03-10 | International Business Machines Corporation | Method of formation of a damascene structure utilizing a protective film |
CN101656208B (zh) * | 2009-09-25 | 2011-11-16 | 中国科学院微电子研究所 | 一种选择性去除TaN金属栅电极层的方法 |
-
2009
- 2009-10-28 CN CN2009102367194A patent/CN102054668B/zh active Active
-
2010
- 2010-06-28 WO PCT/CN2010/074592 patent/WO2011050623A1/zh active Application Filing
- 2010-06-28 US US12/922,944 patent/US8338084B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015184719A1 (zh) * | 2014-06-07 | 2015-12-10 | 北京工业大学 | 湿环境下电子束直接纳米刻蚀或印刷的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102054668B (zh) | 2012-02-22 |
WO2011050623A1 (zh) | 2011-05-05 |
US8338084B2 (en) | 2012-12-25 |
US20110200947A1 (en) | 2011-08-18 |
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TR01 | Transfer of patent right |
Effective date of registration: 20201217 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20220511 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |
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