CN102053486A - Method for forming symmetrical photoresist pattern - Google Patents
Method for forming symmetrical photoresist pattern Download PDFInfo
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- CN102053486A CN102053486A CN2009101984878A CN200910198487A CN102053486A CN 102053486 A CN102053486 A CN 102053486A CN 2009101984878 A CN2009101984878 A CN 2009101984878A CN 200910198487 A CN200910198487 A CN 200910198487A CN 102053486 A CN102053486 A CN 102053486A
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Abstract
The invention discloses a method for forming a symmetrical photoresist pattern. The method comprises the following steps: pretreating a semiconductor wafer and then coating primer on the semiconductor wafer so as to form a photoresist coating; baking the photoresist coating in a first preset time slot at a low first temperature; baking the photoresist coating in a second preset time slot at a second temperature higher than the first temperature; and carrying out exposure, post-baking and development on the photoresist coating subjected to baking so as to form a photoresist pattern, wherein the thickness of the photoresist coating is greater than 800 angstrom, and the second preset time slot is smaller than the first preset time slot. The method provided by the invention has the advantages that the stress release process is lengthened due to low-temperature long-time baking, thereby releasing most of the stress in the photoresist coating; meanwhile, the solvents which can not be removed through low-temperature baking can further be removed through high-temperature short-time baking, thereby realizing the balance between stress release and solvent removal; and the symmetrical photoresist pattern is obtained finally, thereby reducing the influence on semiconductor devices caused by asymmetrical photoresist patterns.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, be specifically related to a kind of method that forms the photoresist figure of symmetry.
Background technology
Photoetching process is a kind of basic operation that is used for removing the specific region of defined on the crystal column surface layer.This technology is a very important procedure in the semiconductor processes, and it is the technological process that is used for setting up figure on different devices and circuit surface.The target of this technological process has two: at first be to set up as far as possible figure near size that design rule requires at crystal column surface; Second target is at the correct positioning pattern of crystal column surface.The entire circuit figure must be properly positioned to crystal column surface, and the relative position on the circuitous pattern between independent each part also must be correct.The final figure of semiconductor devices is in layer to be superposeed at crystal column surface according to specific order by a plurality of mask to set up.
Before photoetching process, at first on mask, form required figure, by photoetching process needed figure transfer is arrived each layer of crystal column surface afterwards.Figure transfer was finished by two steps.At first, figure is transferred to photoresist coating.Photoresist is a kind of photoactive substance, can cause the variation of himself character and structure after exposure.The part that is exposed is become solable matter (positive glue) or is become non-soluble substance (negative glue) by solable matter by non-soluble substance.Can remove solable matter by developer, thereby stay needed figure at photoresist coating.Figure transfer is the transfer from photoresist coating to the crystal column surface layer for the second time.When the part that the crystal column surface layer is not covered by photoresist by lithographic method was removed, figure transfer had just taken place.
Usually, comprise four kinds of basic compositions in the photoresist: polymkeric substance, solvent, emulsion and adjuvant.To the influential composition of the photosensitivity of photoresist is some particular polymer to light and energy-sensitive.In negative glue, polymkeric substance becomes polymerization state by non-polymeric state after exposing, and the polymkeric substance of polymerization state is a kind of anti-etching material.In positive glue, polymkeric substance is insoluble relatively, and after with suitable energy exposure, polymkeric substance is converted to solvable state.Solvent is the composition of capacity maximum in the photoresist, and solvent makes photoresist be in liquid state, and makes photoresist be coated in crystal column surface by the mode of rotation.Photosensitizer is used for producing or controlling the specific reaction of polymkeric substance, specifically is used for the wave spectrum scope of limited reactions energy or reaction energy is restricted to a certain specific wavelength, makes polymkeric substance only react with the energy of this specific wavelength.Adjuvant and photoresist mix the result who reaches specific.Some negative glue include coloring agent, and it is used for absorbing in the photoresist shallow layer and control light.Positive glue may have the antilysis system of chemistry.The part that these adjuvants can stop photoresist not to be exposed is dissolved in developing process.
Operations such as photoetching process generally includes the wafer pre-service, inspect in crystal column surface bottoming glue, spin coating photoresist, soft baking, aligning, exposure, back baking, after developing, developing, inspect after baking firmly, etching and the etching.
During the spin coating photoresist, at first with vacuum cup wafer is fixed, sucker is a hollow metal dish flat, that link to each other with vacuum pipeline.Chuck surface has many apertures, and in the time of above wafer is placed on, the suction of vacuum makes wafer closely contact with sucker.Then, predetermined glue amount is sprayed at crystal column surface, afterwards, the torque that applies on the sucker makes it rise to maximum rotative speed rapidly by a controlled speed.After wafer rotates a predetermined amount of time with maximum rotative speed, be decelerated in a controlled manner and stop, thereby form smooth and uniform photoresist coating.
After the spin coating photoresist, wafer must experience once soft baking, or baking before claiming.Soft baking be a kind of be the heating process of purpose with a part of solvent of evaporation in the photoresist.Evaporating solvent has two reasons.The main effect of solvent is to allow photoresist be coated with skim at crystal column surface, after this effect is finished, and the existence meeting interfere with subsequent technological process of solvent.Therefore solvent meeting absorbing light in the photoresist, and then normal chemical change in the stray light sensitive polymer need reduce the influence of solvent to exposure process as far as possible.The oven dry that second reason is photoresist can help photoresist and crystal column surface better to cohere.Time and temperature are the parameters of soft baking.Fig. 1 is the time and the temperature parameter of soft baking in the prior art.Referring to Fig. 1, use stationary temperature to cure the regular hour during soft baking in the prior art, for example stoving temperature is 90-140 ℃, the time of curing is 40-90S.
Wafer after the soft baking is exposed operations such as also warp baking later, development, forms the photoresist figure that needs, thereby figure transfer is arrived photoresist coating.After developing, need to finish the quality inspection first time of photo etched mask technology, inspect after promptly developing.Its purpose is to distinguish those the wafer of very low possibility by final mask check, and shop characteristic and technology controlling and process data are provided; And sort out the wafer that to reform.
Fig. 2 is the sectional view of the photoresist figure that development obtained after the soft baking parameter of use Fig. 1 was cured the thick photoresist coating.As can be seen from Figure 2, use thick photoresist coating (for example thickness greater than
Coating) when carrying out photoetching, two sidewalls of the photoresist figure that obtains have different angles, promptly the photoresist figure is asymmetric.If use this asymmetric photoresist figure as mask, semiconductor crystal wafer is carried out etching, the etching figure that then obtains is as shown in Figure 3.Fig. 3 carries out the sectional view of the figure that etching obtains for using photoresist figure shown in Figure 2 to semiconductor crystal wafer as mask.As can be seen from Figure 3, when as mask semiconductor crystal wafer being carried out etching with asymmetric photoresist figure, the figure that obtains also is asymmetric.If in the groove of this asymmetric figure, deposit interconnection line, can make that then the square resistance of interconnection line is excessive or inhomogeneous, thereby have influence on the electrology characteristic of the semiconductor devices that is made.
Summary of the invention
The invention provides a kind of method that forms the photoresist figure of symmetry, reduce the influence that semiconductor devices is caused because the photoresist figure is asymmetric.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of method that forms the photoresist figure of symmetry comprises: semiconductor crystal wafer is carried out the pre-service and the glue that feels secure; Form photoresist coating; Cure described photoresist coating first predetermined amount of time with the first low temperature; Cure described photoresist coating second predetermined amount of time with second temperature higher than described first temperature; To the photoresist coating after curing expose, back baking and developing, form the photoresist figure, the thickness of wherein said photoresist coating greater than
And wherein said second predetermined amount of time is less than described first predetermined amount of time.
In one embodiment of the invention, use the accurate temperature controlling hot plate that described photoresist coating is cured.
In this embodiment, the described first low temperature can be 75-125 ℃, is preferably 100 ℃.
In this embodiment, described second temperature can be 100-150 ℃, is preferably 115 ℃.
In this embodiment, described first predetermined amount of time can be 40-180S, is preferably 100S.
In this embodiment, described second predetermined amount of time can be 30-60S, is preferably 40S.
Compared with prior art, technical scheme provided by the present invention is carried out the pre-service and the glue that feels secure to semiconductor crystal wafer; Form photoresist coating; Cure described photoresist coating first predetermined amount of time with the first low temperature; Cure described photoresist coating second predetermined amount of time with second temperature higher than described first temperature; To the photoresist coating after curing expose, back baking and developing, form the photoresist figure, the thickness of wherein said photoresist coating greater than
And wherein said second predetermined amount of time is less than described first predetermined amount of time.Low temperature cures for a long time, the process of the stress relief that extended, thereby discharged the most of stress in the photoresist coating, the further low temperature of having removed that cures between high temperature, short time cures the solvent that can't remove, thereby has realized the balance between stress relief and the removal of solvents.Finally obtain the photoresist figure of symmetry, reduced the influence that semiconductor devices is caused because the photoresist figure is asymmetric.
Description of drawings
Fig. 1 is the time and the temperature parameter of soft baking in the prior art;
Fig. 2 is the sectional view of the photoresist figure that development obtained after the soft baking parameter of use Fig. 1 was cured the thick photoresist coating;
Fig. 3 carries out the sectional view of the figure that etching obtains for using photoresist figure shown in Figure 2 to semiconductor crystal wafer as mask;
Fig. 4 is the time and the temperature parameter of the soft baking that the symmetrical photoresist figure of formation is adopted in the preferred embodiment of the present invention;
Fig. 5 is the sectional view of the photoresist figure that development obtained after the soft baking parameter of use Fig. 4 was cured the thick photoresist coating;
Fig. 6 carries out the sectional view of the figure that obtains after the etching to semiconductor crystal wafer as mask for the photoresist figure that uses Fig. 5.
Embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
The method that forms the photoresist figure of symmetry provided by the invention, use two step baking process, semiconductor crystal wafer is carried out pre-service, feel secure glue and form photoresist coating after, at first with the low first temperature baked photoresist coating, first predetermined amount of time, then with second temperature baked photoresist coating second predetermined amount of time higher than first temperature, wherein the thickness of photoresist coating greater than
And second predetermined amount of time is less than first predetermined amount of time.At last to the photoresist coating after curing expose, back baking and developing, form the photoresist figure that needs.
Because the principal ingredient of photoresist is a polymkeric substance, and the common resolution of thick glue is low, and is to form by having macromolecular polymkeric substance.When the spin coating photoresist, the great centrifugal force that high speed rotating produces makes polymer chain bear bigger stress.Soft baking process makes that a part of stress obtains discharging.Because the process of soft baking is exactly to remove the process of solvent in the photoresist coating, when solvent was removed, the photoresist coating hardening made another part stress wherein be difficult to discharge.And after exposure, the photoresist coating of bulk is divided into less piece, thereby makes remaining stress obtain release.This moment, the process of stress relief made photoresist be out of shape, thereby made the angle of photoresist pattern side wall unequal, formed asymmetric figure.
The solution of the present invention uses two-step approach to implement soft baking, low temperature cures for a long time, the process of the stress relief that extended, thereby discharged the most of stress in the photoresist coating, the further low temperature of having removed that cures between high temperature, short time cures the solvent that can't remove, thereby has realized the balance between stress relief and the removal of solvents.
In the embodiment that use accurate temperature controlling hot plate of the present invention cures photoresist coating, first temperature is 75-125 ℃, is preferably 100 ℃; Second temperature is 100-150 ℃, is preferably 115 ℃; First predetermined amount of time is 40-180S, is preferably 100S; Second predetermined amount of time is 30-60S, is preferably 40S.
Describe the preferred embodiments of the present invention in detail below in conjunction with accompanying drawing.
At first, in order to obtain smooth uniform photoresist coating and make photoresist and wafer between good adhesiveness is arranged, before gluing, wafer is carried out pre-service usually.The pretreated first step normally primary dewatering is cured, and in the atmosphere of vacuum or drying nitrogen, with certain high temperature wafer is cured.The purpose in this step is to remove the moisture of crystal column surface absorption.
Be right after the normally spin coating primer after curing.The purpose of spin coating primer is in order to strengthen the adhesion of photoresist at crystal column surface.Common employed primer is hexamethyldisilane (HMDS).Specifically, use the crystal column surface of primer device after pre-service to spray primer, then, make primer spread over whole crystal column surface equably, improve the rotating speed of wafer then so that make the primer drying with certain rotating speed rotation wafer.
During the spin coating photoresist, at first with vacuum cup wafer is fixed, sucker is a hollow metal dish flat, that link to each other with vacuum pipeline.Chuck surface has many apertures, and in the time of above wafer is placed on, the suction of vacuum makes wafer closely contact with sucker.Then, predetermined glue amount is sprayed at crystal column surface, afterwards, the torque that applies on the sucker makes it rise to maximum rotative speed rapidly by a controlled speed.After wafer rotates a predetermined amount of time with maximum rotative speed, be decelerated in a controlled manner and stop, thereby form smooth and uniform photoresist coating.
After the spin coating photoresist, wafer must experience once soft baking, or baking before claiming.Soft baking be a kind of be the heating process of purpose with a part of solvent of evaporation in the photoresist.Evaporating solvent has two reasons.The main effect of solvent is to allow photoresist be coated with skim at crystal column surface, after this effect is finished, and the existence meeting interfere with subsequent technological process of solvent.Therefore solvent meeting absorbing light in the photoresist, and then normal chemical change in the stray light sensitive polymer need reduce the influence of solvent to exposure process as far as possible.The oven dry that second reason is photoresist can help photoresist and crystal column surface better to cohere.Time and temperature are the parameters of soft baking.
Use two step baking process that photoresist coating is carried out soft baking in the preferred embodiments of the present invention.This embodiment adopts the accurate temperature controlling hot plate to implement soft baking.At first, using lower temperature (first temperature), can be 75-125 ℃ for example, is preferably 100 ℃, and photoresist coating is carried out soft baking.The duration of this soft baking was first schedule time, for example can be 40-180S, preferably 100S.Then, using higher temperature (second temperature), can be 100-150 ℃ for example, is preferably 115 ℃, and the photoresist coating that cures through low temperature is carried out soft baking.The duration of this soft baking can be shorter than the time period that low temperature cures, and for example can be 30-60S, preferably 40S.
Fig. 4 is the time and the temperature parameter of the soft baking that the symmetrical photoresist figure of formation is adopted in the preferred embodiment of the present invention.Referring to Fig. 4, at first under 100 ℃, photoresist coating is cured 100S, then under 115 ℃, photoresist coating is cured 40S.
Except using hot plate to realize the soft baking, equipment carries out soft baking to photoresist coating can also to use that baking oven, microwave cure etc.Wherein baking oven comprises convection oven, vacuum drying oven and the mobile belt IR bake etc. of the convective heating of utilizing gas, the time that convection oven and vacuum drying oven need is longer, and mobile belt IR bake is owing to use infrared origin, and this mode of curing is than convection current baking oven and the employed time much shorter of vacuum drying oven.Hot plate cures the required time and is shorter than the time that baking oven needs, but the time more required than IR bake is long.It is the fastest a kind of equipment of firing rate in the mode of curing that microwave cures, and its time that needs is shorter.
When utilizing method of the present invention to realize soft baking, the temperature of curing is for the first time cured 1/2nd of mode institute serviceability temperature in prior art utilization correspondence and is selected between the twice, and the time of curing cures a times of mode required time in prior art utilization correspondence and selects between the twice; And that the temperature of curing is for the second time cured the employed temperature of mode than prior art utilization correspondence usually is high 10 ℃, and the time of curing is that prior art utilization correspondence is cured 2/3rds of mode required time.
Photoresist coating to the soft baking of two step baking process exposes.The first step of exposure is required figure locate on crystal column surface or to aim at, second go on foot be by exposure lamp or other radiation source with figure transfer to photoresist coating.Wafer after the exposure need carry out the back baking, and its purpose is to reduce standing wave effect.The time and the temperature of back baking are determined by baking method, conditions of exposure and photoresist chemistry.
Record the exposure and the unexposed area of device or circuit pattern on the wafer after the baking of back.By the chemolysis of polymerization photoresist is not made pattern development.On photoresist, successfully make pattern development will depend on the exposure mechanism of photoresist.For negative glue, decompose in developer solution the zone of convergency of photoresist.For example, can use the developer solution of development dimethylbenzene as negative glue.And for positive glue, there are different dissolution rates the zone of convergency with the zone of convergency not in developer solution, is about 1: 4, that is to say always to dissolve some photoresists from the zone of convergency in development.Therefore, the long meeting of developer solution that overuses or development time causes photoresist too thin and can not use.The result might cause perk or fracture in etching.The developer solution of positive glue has two kinds: alkali-aqueous solution and non-ionic solution.Alkali-aqueous solution can be NaOH or potassium hydroxide.Soft baking time and temperature, exposure, solution level, time, temperature and developing method all can exert an influence to developing result.
Need wafer is dried by the fire firmly after developing, its purpose is the same with soft baking in fact, solidifies photoresist by the evaporation of solvent exactly.In addition, the special purpose of hard baking is to make photoresist and crystal column surface that good cohesiveness is arranged.The parameter of this step also is time of curing and temperature.
After developing and curing, to finish the quality inspection first time of photo etched mask technology exactly, inspect after promptly developing.Its purpose is to distinguish those the wafer of very low possibility by final mask check, and shop characteristic and technology controlling and process data are provided; And sort out the wafer that to reform.
Fig. 5 is the sectional view of the photoresist figure that development obtained after the soft baking parameter of use Fig. 4 was cured the thick photoresist coating.As can be seen from Figure 5, use two sidewalls of the thick photoresist figure that obtains after the method for the present invention to have basic angle same.
To carrying out etching by the wafer of inspecting after developing, remove residual photoresist, carry out then inspecting after the etching, carry out other PROCESS FOR TREATMENT for inspecting qualified wafer after the etching.
Fig. 6 carries out the sectional view of the figure that obtains after the etching to semiconductor crystal wafer as mask for the photoresist figure that uses Fig. 5.As can be seen from Figure 6, use the photoresist figure of Fig. 5 to carry out etching as mask, two sidewalls of the step of formation have basic angle same, and what obtain is the step of symmetry.When depositing interconnection line between the step of this figure, the square resistance of interconnection line is uniformly, has reduced the influence to the semiconductor devices electrology characteristic that produces owing to the photoresist figure is asymmetric.
By the above as can be seen, technical scheme provided by the present invention is carried out the pre-service and the glue that feels secure to semiconductor crystal wafer; Form photoresist coating; Cure described photoresist coating first predetermined amount of time with the first low temperature; Cure described photoresist coating second predetermined amount of time with second temperature higher than described first temperature; To the photoresist coating after curing expose, back baking and developing, form the photoresist figure, the thickness of wherein said photoresist coating greater than
And wherein said second predetermined amount of time is less than described first predetermined amount of time.Low temperature cures for a long time, the process of the stress relief that extended, thereby discharged the most of stress in the photoresist coating, the further low temperature of having removed that cures between high temperature, short time cures the solvent that can't remove, thereby has realized the balance between stress relief and the removal of solvents.Finally obtain the photoresist figure of symmetry, reduced the influence that semiconductor devices is caused because the photoresist figure is asymmetric.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. method of photoresist figure that forms symmetry comprises:
Semiconductor crystal wafer is carried out the pre-service and the glue that feels secure;
Form photoresist coating;
Cure described photoresist coating first predetermined amount of time with the first low temperature;
Cure described photoresist coating second predetermined amount of time with second temperature higher than described first temperature;
To the photoresist coating after curing expose, back baking and developing, form the photoresist figure,
The thickness of wherein said photoresist coating greater than
And
Wherein said second predetermined amount of time is less than described first predetermined amount of time.
2. the method that forms the photoresist figure of symmetry as claimed in claim 1 is characterized in that, uses the accurate temperature controlling hot plate that described photoresist coating is cured.
3. the method that forms the photoresist figure of symmetry as claimed in claim 2 is characterized in that the described first low temperature is 75-125 ℃.
4. the method that forms the photoresist figure of symmetry as claimed in claim 3 is characterized in that described first temperature is 100 ℃.
5. the method that forms the photoresist figure of symmetry as claimed in claim 2 is characterized in that described second temperature is 100-150 ℃.
6. the method that forms the photoresist figure of symmetry as claimed in claim 5 is characterized in that described second temperature is 115 ℃.
7. the method that forms the photoresist figure of symmetry as claimed in claim 2 is characterized in that described first predetermined amount of time is 40-180S.
8. the method that forms the photoresist figure of symmetry as claimed in claim 7 is characterized in that described first predetermined amount of time is 100S.
9. the method that forms the photoresist figure of symmetry as claimed in claim 2 is characterized in that described second predetermined amount of time is 30-60S.
10. the method that forms the photoresist figure of symmetry as claimed in claim 9 is characterized in that described second predetermined amount of time is 40S.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101984878A CN102053486A (en) | 2009-11-05 | 2009-11-05 | Method for forming symmetrical photoresist pattern |
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| CN2009101984878A CN102053486A (en) | 2009-11-05 | 2009-11-05 | Method for forming symmetrical photoresist pattern |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752155A (en) * | 2013-12-30 | 2015-07-01 | 美新半导体（无锡）有限公司 | Method for removing graph edge adhesive material and photoresist after IBE (ion beam etching) |
| CN116540438A (en) * | 2023-04-25 | 2023-08-04 | 苏州润博希电子科技有限公司 | LCD display screen processing method |
| CN117894719A (en) * | 2024-03-14 | 2024-04-16 | 合肥晶合集成电路股份有限公司 | Wafer heating device, overlay mark and device control method |
-
2009
- 2009-11-05 CN CN2009101984878A patent/CN102053486A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752155A (en) * | 2013-12-30 | 2015-07-01 | 美新半导体（无锡）有限公司 | Method for removing graph edge adhesive material and photoresist after IBE (ion beam etching) |
| CN104752155B (en) * | 2013-12-30 | 2017-08-29 | 美新半导体（无锡）有限公司 | A kind of method of pattern edge bur and photoresist after removal IBE etchings |
| CN116540438A (en) * | 2023-04-25 | 2023-08-04 | 苏州润博希电子科技有限公司 | LCD display screen processing method |
| CN116540438B (en) * | 2023-04-25 | 2023-10-27 | 苏州润博希电子科技有限公司 | LCD display screen processing method |
| CN117894719A (en) * | 2024-03-14 | 2024-04-16 | 合肥晶合集成电路股份有限公司 | Wafer heating device, overlay mark and device control method |
| CN117894719B (en) * | 2024-03-14 | 2024-06-07 | 合肥晶合集成电路股份有限公司 | Wafer heating device, overlay mark and device control method |
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Application publication date: 20110511 |